CN101030625A - Organic electroluminescent device - Google Patents
Organic electroluminescent device Download PDFInfo
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- CN101030625A CN101030625A CN 200710065095 CN200710065095A CN101030625A CN 101030625 A CN101030625 A CN 101030625A CN 200710065095 CN200710065095 CN 200710065095 CN 200710065095 A CN200710065095 A CN 200710065095A CN 101030625 A CN101030625 A CN 101030625A
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- 239000000463 material Substances 0.000 claims abstract description 39
- 238000005401 electroluminescence Methods 0.000 claims abstract description 35
- 230000005540 biological transmission Effects 0.000 claims abstract description 23
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000007924 injection Substances 0.000 claims abstract description 17
- 238000002347 injection Methods 0.000 claims abstract description 17
- 150000004820 halides Chemical class 0.000 claims abstract description 12
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 9
- 239000002019 doping agent Substances 0.000 claims description 17
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 3
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 claims description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- TXKAQZRUJUNDHI-UHFFFAOYSA-K bismuth tribromide Chemical compound Br[Bi](Br)Br TXKAQZRUJUNDHI-UHFFFAOYSA-K 0.000 claims description 2
- KOECRLKKXSXCPB-UHFFFAOYSA-K triiodobismuthane Chemical compound I[Bi](I)I KOECRLKKXSXCPB-UHFFFAOYSA-K 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 96
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- IWZZBBJTIUYDPZ-DVACKJPTSA-N (z)-4-hydroxypent-3-en-2-one;iridium;2-phenylpyridine Chemical compound [Ir].C\C(O)=C\C(C)=O.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 IWZZBBJTIUYDPZ-DVACKJPTSA-N 0.000 description 1
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Abstract
The invention is concerned with the organic electroluminescence device, which consists of the anode layer, the organic function layer and the cathode layer, the organic function layer consists of the luminescence layer, the cavity injection layer, the cavity transmission layer, the electron injection layer, the electron transmission layer and at least one layer of the cavity bar layer, the characteristic is: at least one layer of the organic layer doping at least one material that selects from the halide of the bismuth or the oxide of the bismuth. The doping material can adjust the density of the cavity and electron in order to balance them, and also improve the stability of the organic function layer and the life of the organic electroluminescence device.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device (OLED), more specifically, relate to the hole transmission layer with doping and/or the organic electroluminescence device of hole injection layer.
Background technology
A series of advantages such as display of organic electroluminescence has from main light emission, low-voltage DC driven, solidifies entirely, the visual angle is wide, in light weight, composition and technology are simple, compare with LCD, display of organic electroluminescence does not need backlight, the visual angle is big, power is low, and its response speed can reach 1000 times of LCD, and its manufacturing cost but is lower than the LCD of equal resolution, therefore, display of organic electroluminescence has broad application prospects.
The general structure of organic electroluminescence device comprises successively: matrix, anode, organic layer, negative electrode, organic function layer comprises emission layer (EML) again, can also comprise hole injection layer (HIL) and/or hole transmission layer (HTL) between anode and emission layer, and electron transfer layer between emission layer and negative electrode (ETL) and/or electron injecting layer (EIL), can also comprise hole blocking layer (HBL) between emission layer and electron transfer layer etc.
The operation principle of OLED is as follows: when voltage puts between anode and the negative electrode, the hole is injected into the emission layer by hole injection layer and hole transmission layer from anode, electronics is injected into the emission layer by electron injecting layer and electron transfer layer from negative electrode simultaneously, the hole and the electronics that are injected in the emission layer are compound at emission layer, thereby produce exciton (exciton), when excitation state changes ground state into, these excitonic luminescences.
In at present traditional bilayer or sandwich construction device, hole transmission layer is absolutely necessary, and it has strong carrier transport ability, mates the effect of taking on hole transport in device by energy level.But general for the OLED device, the ability of hole transport is better than electron transport ability 10-1000 doubly, and this can cause the decrease in efficiency of device and life-span to reduce.In order to obtain high OLED luminous efficiency, just must balance hole injection rate and electronics injection rate.
On the other hand, since derivative of tri-arylamine group at present commonly used as hole mobile material, as N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4,4-diamines (NPB), N, N '-diphenyl-N, N '-two (aminomethyl phenyl)-1,1 '-xenyl-4,4 '-diamines (TPD) etc., because of their thermal stability all relatively poor, the vitrification point T of NPB
gBe 96 ℃, the T of TPD
gOnly be 65 ℃, so cause corresponding OLED device stability relatively poor, the life-span is shorter.
At above-mentioned two aspect problems, be the performance of integral body raising OLED device, proposed in hole transmission layer, to adopt the solution of doping techniques in the prior art mostly.At present, there are two kinds of mechanism explains in the hole transmission layer doping techniques to the OLED performance improvement.A kind of i.e. injection in hole or transmission strengthen, and will accumulate positive charge at luminous interface, form internal electric field at device inside at strengthening the hole, and internal electric field helps attracting electronics to be injected into luminous interface fast, thereby reaches the balance of charge carrier.Another mechanism is at weakening the hole, i.e. injection in hole or transmission are weakened, and then the hole concentration at luminous interface reduces, and makes carrier concentration at the interface reach balance.Carrier balance will make effective combined efficiency of electron hole be improved, thereby is beneficial to the raising of device efficiency.
Document Zhang Zhi-lin, Jiang Xue-yin and O Omoto et al., J.Phys.D:Appl.Phys., 31,32-35,1998 disclose mixed 5 in hole transmission layers, 6,11,12-tetraphenyl aphthacene (rubrene), because of rubrene has lower highest occupied molecular orbital energy level (HOMO=-5.5eV) and higher minimum not occupied orbital energy level (LUMO=-2.9eV), at ITO/ hole transmission layer and Alq
3Help the injection of hole and electronics on/the hole transport bed boundary, the Joule heat that the OLED device is produced is at work reduced, thereby has limited the gathering and the crystallization of interface molecule, has improved the stability of device.But, because rubrene itself is luminous, use it as dopant, it is luminous to cause having introduced impurity in the luminescent spectrum of device, influences the spectral characteristic of device.
Summary of the invention
The objective of the invention is to solve the above-mentioned problems in the prior art, a kind of organic electroluminescence device that can effectively improve luminous efficiency and stability is provided.
A kind of organic electroluminescence device, comprise anode layer, organic function layer and cathode layer successively, comprise luminescent layer in the organic function layer, and one deck at least in hole injection layer, hole transmission layer, electron injecting layer, electron transfer layer and the hole blocking layer, it is characterized in that the one deck at least in the organic function layer is doped with at least a material in the oxide of the halide that is selected from bismuth metal or bismuth.
In above-mentioned organic electroluminescence device, the doping way of the dopant material in the organic function layer in host material can be evenly to mix comprehensively, also can be comprehensive grade doping, can also be region doping, and doped regions is n, and n is the integer of 1-5.
In above-mentioned organic electroluminescence device, the doping content of dopant material in organic function layer is 1-100%, and preferred doping content is 15%-70%.
In above-mentioned organic electroluminescence device, hole transmission layer is doped with at least a material in the oxide of the halide that is selected from bismuth metal or bismuth.
In above-mentioned organic electroluminescence device, the halide of dopant material bismuth metal is selected from fluoridizes in bismuth, bismuth chloride, bismuth bromide or the bismuth iodide any one, or the oxide of dopant material bismuth metal is a bismuth oxide.
The present invention has adopted the halide of bismuth metal and oxide to mix in organic function layer, can improve the charge carrier injection efficiency, equilibrium concentration, and the efficient of raising device, the while can be improved the thermal stability of organic layer, improves the stability of device.
Bismuth fluoride in the halide of bismuth metal is the very important bismuth fluoride of a class, can prepare by vacuum deposition method, and because it has very high transmitance at visible region and infrared light district, its film has the application of a lot of optics aspect.The present invention is based on three (oxine) aluminium (Alq
3) organic electroluminescence device in adopted bismuth fluoride (BiF first
3) as dopant.
Organic electroluminescence device of the present invention has the following advantages:
1, improved the luminous efficiency of device effectively.By the halide or the oxide of doping bismuth in each organic function layer, can regulate and control the concentration of charge carrier, make hole and electronics reach optimum Match, improve the combined efficiency of emptying aperture cave and electronics greatly, promptly reached the purpose that improves the device luminous efficiency.
2, the high thermal stability of dopant material has effectively suppressed the crystallization of transferring material and injection material, make the thermal stability of organic film obviously improve, and the thermal stability of organic film determines the device temperature scope of application and heat-staple key element just.
3, the luminescent spectrum of device is not subjected to the influence of dopant material, thereby has guaranteed colorimetric purity.
Description of drawings
The structural representation of Fig. 1 organic electroluminescence device of the present invention.
The device correlated performance figure of Fig. 2 embodiment of the invention 1 and Comparative Examples, a is brightness-voltage pattern, and b is current density-voltage pattern, and c is efficient-current density figure
The device correlated performance figure of Fig. 3 embodiment of the invention 2, a are the comparison diagram of brightness-voltage and current density-voltage, and b has been bright voltage pattern, and c is current efficiency-current density figure, and d is figure device lifetime
Device current efficient-current density the figure of Fig. 4 embodiment of the invention 3
Embodiment
Basic structure profile in the organic electroluminescence device that the present invention proposes as shown in Figure 1, wherein 1 be transparency carrier, can be glass or flexible substrate, a kind of material in flexible substrate employing polyesters, the polyimides compounds; 2 is anode layer, can adopt inorganic material or organic conductive polymer, inorganic material is generally ITO, the higher metals of work function such as metal oxide such as zinc oxide, zinc tin oxide or gold, copper, silver, the optimized ITO that is chosen as, organic conductive polymer are preferably a kind of material in polythiophene/polyvinylbenzenesulfonic acid sodium (hereinafter to be referred as PEDOTPSS), the polyaniline (hereinafter to be referred as PANI); 3 is cathode layer, the general alloy that adopts the lower metal of work functions such as lithium, magnesium, calcium, strontium, aluminium, indium or they and copper, gold, silver, or the electrode layer that alternately forms of metal and metal fluoride, the present invention is preferably Mg:Ag layer and LiF layer successively, Al layer successively.
Among Fig. 14 is hole injection layer HIL (nonessential), and its host material can adopt the copper phthalein mountain valley with clumps of trees and bamboo (CuPc), and the inorganic material of doping can adopt the halide of bismuth metal or the oxide of bismuth metal; 5 is hole transmission layer HTL, and its host material can adopt the low molecular material of the arylamine class and the branch polymer same clan, preferred NPB, and the inorganic material of doping can adopt the halide of bismuth metal or the oxide of bismuth metal; 6 is luminescent layer EML, generally adopts small molecule material, can be fluorescent material, as metal organic complex (as Alq
3, Gaq
3, Al (Saph-q) or Ga (Saph-q)) compounds, can be doped with dyestuff in this small molecule material, doping content is the 0.01wt%～20wt% of small molecule material, dyestuff is generally a kind of material in aromatic condensed ring class (as rubrene), Coumarins (as DMQA, C545T) or two pyrans class (as DCJTB, the DCM) compound, the luminescent layer material also can adopt carbazole derivates such as CBP, polyvinylcarbazole (PVK), but Doping Phosphorus photoinitiator dye in this material is as three (2-phenylpyridine) iridium (Ir (ppy)
3), two (2-phenylpyridine) (acetylacetone,2,4-pentanedione) iridium (Ir (ppy)
2(acac)), octaethylporphyrin platinum (PtOEP) etc.; 7 is electron transfer layer, and materials used is the micromolecule electron transport material also, is generally metal organic complex (as Alq
3, Gaq
3, Al (Saph-q), BAlq or Ga (Saph-q)), aromatic condensed ring class (as pentacene, perylene) or o-phenanthroline class (as Bphen, BCP) compound; 8 is power supply.
To provide some embodiment below also in conjunction with the accompanying drawings, specific explanations technical scheme of the present invention.Should be noted that the following examples only are used for helping to understand invention, rather than limitation of the present invention.
Embodiment 1:(device number OLED-1)
Glass/ITO/NPB/NPB∶BiF
3/NPB/Alq
3/LiF/Al (1)
The concrete preparation method of organic electroluminescence device that preparation has above structural formula (1) is as follows:
1. utilize the ultrasonic and ultrasonic method of deionized water of the washing agent boil that glass substrate is cleaned, and be placed on infrared lamp under and dry, at evaporation one deck anode material on glass, thickness is 180nm;
2. the above-mentioned glass substrate that has anode is placed in the vacuum chamber, be evacuated to 1 * 10
-5Pa continues the evaporation hole transmission layer on above-mentioned anode tunic, first evaporation one deck NPB film, and speed is 0.1nm/s, the evaporation thickness is 20nm; The method that adopts double source to steam is altogether again mixed, NPB and BiF
3The evaporation speed ratio be 1: 1, BiF
3Doping content in NPB is 50wt%, and the total speed of evaporation is 0.1nm/s, and the evaporation thickness is 10nm; Evaporation one deck NPB film again, speed is 0.1nm/s, the evaporation thickness is 20nm.
3. on hole transmission layer, continue evaporation one deck Alq
3Material is as the luminescent layer of device, and its evaporation speed is 0.2nm/s, and the evaporation total film thickness is 50nm;
4. last, evaporation LiF layer and Al layer are as the cathode layer of device successively on above-mentioned luminescent layer, and wherein the evaporation speed of LiF layer is 0.01～0.02nm/s, and thickness is 0.7nm, and the evaporation speed of Al layer is 2.0nm/s, and thickness is 150nm.
Comparative Examples 1:(device number OLED-is to 1)
Glass/ITO/NPB/NPB∶BiF
3/Alq
3/LiF/Al (2)
The concrete preparation method of organic electroluminescence device that preparation has above structural formula (2) is as follows: step is 1., 3. and 4. with embodiment 1, step 2. in first evaporation one deck NPB, speed is 0.1nm/s, and the evaporation thickness is 40nm, adopts double source to steam evaporation NPB and BiF simultaneously altogether again
3, guarantee BiF
3Evenly be entrained among the NPB NPB and BiF comprehensively
3The evaporation speed ratio be 1: 1, BiF
3Doping content in NPB is 50wt%, and thickness is 10nm.
Comparative Examples 2:(device number OLED-is to 2)
Glass/ITO/NPB∶BiF
3/NPB/Alq
3/LiF/Al (3)
The concrete preparation method of organic electroluminescence device that preparation has above structural formula (3) is as follows: step is 1., 3. and 4. with embodiment 1, and the 2. middle double source that adopts earlier of step steams evaporation NPB and BiF simultaneously altogether
3, guarantee BiF
3Evenly be entrained among the NPB NPB and BiF comprehensively
3The evaporation speed ratio be 1: 1, BiF
3Doping content in NPB is 50wt%, and thickness is 10nm, evaporation one deck NPB again, and speed is 0.1nm/s, the evaporation thickness is 40nm.
Comparative Examples 3:(device number OLED-is to 3)
Glass/ITO/NPB/Alq
3/LiF/Al (4)
It is as follows that preparation has the concrete preparation method of organic electroluminescence device of above structural formula (4): step is 1., 3. and 4. with embodiment 1, step 2. in evaporation one deck NPB, speed is 0.1nm/s, the evaporation thickness is 50nm.
The OLED device architecture performance of top embodiment 1 and Comparative Examples 1,2,3 is as shown in table 1 below, and corresponding performance map is referring to Fig. 2:
Table 1
| Device number | HTL | Driving voltage (V ， @200nit) | Current density (A/m 2，6V) | Luminous efficiency (cd/A ， @200nit) |
| OLED-1 | NPB(20nm)/NPB∶BiF 3(50％)(10nm)/NPB(20nm) | 4.8 | 290.7 | 2.56 |
| OLED-is to 1 | NPB(40nm)/NPB∶BiF 3(50％)(10nm) | 7.4 | 460.3 | 0.15 |
| OLED-is to 2 | NPB∶BiF 3(x％)(10nm)/NPB(40) | 4.0 | 802.3 | 2.09 |
| OLED-is to 3 | NPB(50nm) | 4.5 | 763.4 | 2.12 |
By table 1 and Fig. 1, Fig. 2, Fig. 3 as can be seen, the embodiment of the invention 1 is at the centre position of hole transmission layer NPB doping BiF
3Though its driving voltage rises to some extent, luminous efficiency is compared other Comparative Examples and is significantly increased, and the doping way of Comparative Examples 1 makes that not only the brightness of device is very low, and luminous efficiency is also very low, and main cause is because contain dopant BiF
3NPB and luminescent layer Alq
3Be adjacent, exciton is had quenching effect, so cause device performance very poor.Comparative Examples 2 is being doped with BiF
3NPB the upper strata also evaporation one deck NPB material is arranged, make dopant BiF
3With luminescent layer Alq
3Separate, unadulterated device curve overlaps substantially in its brightness-voltage, current density-voltage and current density-current efficiency curve and the Comparative Examples 3, the doping way that Comparative Examples 2 is described is little to the device performance influence, can know that by experimental result and Related Mechanism analysis the concentration of optimization dopant and the doping position of chosen dopant can obtain good device performance.
Glass/ITO/HIL/NPB∶BiF
3(x％)/NPB/Alq
3/LiF/Al (5)
The concrete preparation method of organic electroluminescence device that preparation has above structural formula (5) is as follows:
1. utilize the ultrasonic and ultrasonic method of deionized water of the washing agent boil that glass substrate is cleaned, and be placed on infrared lamp under and dry, at evaporation one deck anode material on glass, thickness is 150nm;
2. the above-mentioned glass substrate that has anode layer is placed in the vacuum chamber, be evacuated to 1 * 10
-5Pa continues evaporation one deck hole injection layer on above-mentioned anode tunic, the evaporation thickness is 100nm, evaporation hole transmission layer afterwards, and method is that the method that adopts double source to steam is altogether earlier mixed, and makes NPB and BiF
3The evaporation speed ratio be 1: x, BiF
3Doping content in NPB is x wt%, and the total speed of evaporation is 0.2nm/s, and thickness is 15nm; Continue evaporation one deck NPB film again, evaporation speed is 0.1nm/s, and thickness is 20nm; In the present embodiment, BiF
3Doping content in NPB is selected 25% and 50% two concentration, and simultaneously as a comparison, preparation does not have BiF
3The device that mixes;
3. on hole transmission layer, continue evaporation one deck Alq
3Material is as the electron transfer layer of device, and its evaporation speed is 0.2～0.3nm/s, and the evaporation total film thickness is 40nm;
4. last, evaporation LiF layer and Al layer are as the cathode layer of device successively on above-mentioned luminescent layer, and wherein the evaporation speed of LiF layer is 0.01～0.02nm/s, and thickness is 0.7nm, and the evaporation speed of Al layer is 2.0nm/s, and thickness is 150nm.
The device architecture performance data of different levels of doping is as shown in table 2 below, and the corresponding devices performance map is referring to Fig. 3:
Table 2
| The device architecture of doped portion | x wt％ | Driving voltage (V ， @200nit) | Current density (A/m 2，6V) | Luminous efficiency (cd/A ， @200nit) |
| NPB(20nm) | 0 | 3.9 | 194.2 | 6.49 |
| NPB∶BiF 3(25％)(15nm)/NPB(20nm) | 25 | 3.9 | 161.6 | 6.93 |
| NPB∶BiF 3(50％)(15nm)/NPB(20nm) | 50 | 4.3 | 74.90 | 8.16 |
As can be seen, 25%BiF mixes under same brightness from Fig. 3 (a)
3Device required voltage and unadulterated device voltage basically identical, doping 50%BiF
3Device higher slightly than the device that do not mix, illustrate in above-mentioned doping mix little to device brightness and current affects.Fig. 3 (b) has reacted the bright voltage condition that rises of three devices, and the curve basically identical of three devices has illustrated that doping is also little to the influence that plays bright voltage in above-mentioned doping.Fig. 3 (c) is the current efficiency-current density figure of three devices, and BiF as can be seen from Figure mixes
3Can improve the efficient of device, the maximum current efficient of comparing the device that do not mix is about 8cd/A, doping 25%BiF
3The maximum current efficient of device bring up to 9cd/A, doping 50%BiF
3The maximum current efficient of device bring up to 10cd/A.
Fig. 3 (d) is unadulterated device and doping 25%BiF
3Curve device lifetime, as can be seen from the figure, 25% BiF that mixes
3Can make prolong one times, the life-span (100cd/m of unadulterated device life-span half-life of device
2Half-life) about 67000h, doping 25%BiF
3(100cd/m device lifetime
2Half-life) about 130000h.
Glass/ITO/NPB/NPB∶BiF
3(x％)/NPB/Alq/LiF/Al (6)
The concrete preparation method of organic electroluminescence device that preparation has above structural formula (6) is as follows:
Step is 1., 3. and 4. with embodiment 1, step 2. in evaporation one deck NPB on anode layer earlier, thickness is 20nm, the method that adopts double source to steam is altogether again mixed, NPB and BiF
3Evaporation rate be 1: x, BiF
3Doping content in NPB is x wt%, and the total speed of evaporation is 0.2nm/s, and thickness is 10nm; Continue evaporation one deck NPB film again, evaporation speed is 0.1nm/s, and thickness is 20nm.
The device architecture performance data of different levels of doping is as shown in table 3 below, and the corresponding devices performance map is referring to Fig. 4:
Table 3
| The device architecture of doped portion | x wt％ | Driving voltage (V ， @200nit) | Current density (A/m 2， 6V) | Luminous efficiency (cd/A ， @200nit) |
| NPB(50nm) | 0 | 4.5 | 763.4 | 2.12 |
| NBP(20nm)/NPB∶BiF 3(5％)(10nm)/NPB(20nm) | 5 | 4.6 | 443.9 | 1.96 |
| NBP(20nm)/NPB∶BiF 3(15％)(10nm)/NPB(20nm) | 15 | 5.1 | 243.5 | 2.53 |
| NBP(20nm)/NPB∶BiF 3(30％)(10nm)/NPB(20nm) | 30 | 4.9 | 284.9 | 2.59 |
| NBP(20nm)/NPB∶BiF 3(50％)(10nm)/NPB(20nm) | 50 | 4.8 | 290.7 | 2.56 |
| NBP(20nm)/NPB∶BiF 3(65％)(10nm)/NPB(20nm) | 65 | 4.8 | 329.8 | 2.55 |
| NBP(20nm)/NPB∶BiF 3(75％)(10nm)/NPB(20nm) | 75 | 4.8 | 287.2 | 2.83 |
| NBP(20nm)/NPB∶BiF 3(90％)(10nm)/NPB(20nm) | 90 | 5.0 | 217.8 | 3.12 |
Can see that by table 3 and Fig. 4 along with the increase of doping content, current efficiency improves gradually, brings up to 3.12cd/A from 2.12cd/A, reason is because along with BiF
3The increase of concentration, the ability that reduces hole transport strengthens gradually, makes the concentration of hole and electronics tend to balance more, thereby has improved device efficiency.
Claims (10)
1, a kind of organic electroluminescence device, comprise anode layer, organic function layer and cathode layer successively, comprise luminescent layer in the organic function layer, and one deck at least in hole injection layer, hole transmission layer, electron injecting layer, electron transfer layer and the hole blocking layer, it is characterized in that the one deck at least in the organic function layer is doped with at least a material in the oxide of the halide that is selected from bismuth metal or bismuth.
2,, it is characterized in that described dopant material evenly is entrained in the organic function layer comprehensively according to the organic electroluminescence device of claim 1.
3,, it is characterized in that the comprehensive grade doping of described dopant material is in organic function layer according to the organic electroluminescence device of claim 1.
4,, it is characterized in that described region of doped material is entrained in the organic function layer according to the organic electroluminescence device of claim 1.
5, according to the organic electroluminescence device of claim 4, the doped region that it is characterized in that described dopant material is n, and n is 1～5 integer.
6,, it is characterized in that described hole transmission layer is doped with at least a material in the oxide of the halide that is selected from bismuth metal or bismuth according to the organic electroluminescence device of the arbitrary claim of claim 1～5.
7,, it is characterized in that the doping content of described dopant material in organic function layer is 1～100wt%. according to the organic electroluminescence device of the arbitrary claim of claim 1～5
8,, it is characterized in that the doping content of described dopant material in described organic function layer is 15～70wt% according to the organic electroluminescence device of claim 7.
9, according to the organic electroluminescence device of the arbitrary claim of claim 1-5, the halide that it is characterized in that described bismuth metal is selected from fluoridizes bismuth, bismuth chloride, bismuth bromide or bismuth iodide.
10, according to the organic electroluminescence device of the arbitrary claim of claim 1-5, the oxide that it is characterized in that described bismuth metal is a bismuth oxide.
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| CNB2007100650955A CN100452476C (en) | 2007-04-03 | 2007-04-03 | Organic electroluminescent device |
| PL08006767T PL1986473T3 (en) | 2007-04-03 | 2008-04-02 | Organic electroluminescent device |
| EP08006767.1A EP1986473B1 (en) | 2007-04-03 | 2008-04-02 | Organic electroluminescent device |
| US12/062,013 US20090001878A1 (en) | 2007-04-03 | 2008-04-03 | Organic electroluminescent device |
| TW097112197A TW200943600A (en) | 2007-04-03 | 2008-04-03 | Organic electroluminescent device |
| JP2008096769A JP5461787B2 (en) | 2007-04-03 | 2008-04-03 | Organic electroluminescence device |
| KR1020080031391A KR101003130B1 (en) | 2007-04-03 | 2008-04-03 | Organic Electroluminescent Device |
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| CN101816080A (en) * | 2007-09-25 | 2010-08-25 | 奥斯兰姆奥普托半导体有限责任公司 | Device emitting radiation and method for the production thereof |
| CN103236501A (en) * | 2013-03-13 | 2013-08-07 | 华中科技大学 | Metal-halide-doped organic hole transporting layer, and preparation method and application thereof |
| CN104183727A (en) * | 2013-05-21 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emission diode and preparation method thereof |
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| US6998776B2 (en) * | 2003-04-16 | 2006-02-14 | Corning Incorporated | Glass package that is hermetically sealed with a frit and method of fabrication |
| CN1853288B (en) * | 2003-09-19 | 2010-12-15 | 默克专利有限公司 | Organic electroluminescent element |
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| US8441004B2 (en) | 2007-09-25 | 2013-05-14 | Osram Opto Semiconductors Gmbh | Radiation emitting device and method for the production thereof |
| CN103236501A (en) * | 2013-03-13 | 2013-08-07 | 华中科技大学 | Metal-halide-doped organic hole transporting layer, and preparation method and application thereof |
| CN103236501B (en) * | 2013-03-13 | 2015-10-21 | 华中科技大学 | The organic cavity transmission layer of doping metal halogenide, its preparation method and application |
| CN104183727A (en) * | 2013-05-21 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emission diode and preparation method thereof |
| CN104218178A (en) * | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | Organic light emission diode device and fabrication method thereof |
| WO2019104848A1 (en) * | 2017-11-30 | 2019-06-06 | 武汉华星光电半导体显示技术有限公司 | Anode with hole transdport function and organic light-emitting display device |
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