CN1161002C - Organic electroluminescent device - Google Patents

Organic electroluminescent device Download PDF

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CN1161002C
CN1161002C CNB031210635A CN03121063A CN1161002C CN 1161002 C CN1161002 C CN 1161002C CN B031210635 A CNB031210635 A CN B031210635A CN 03121063 A CN03121063 A CN 03121063A CN 1161002 C CN1161002 C CN 1161002C
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organic
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organic material
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CN1457105A (en
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勇 邱
邱勇
高裕弟
魏鹏
张德强
王立铎
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Tsinghua University
Beijing Visionox Technology Co Ltd
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Tsinghua University
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Abstract

The present invention relates to a kind of organic electro luminescence part. Empty cave transmission layer of this part adopts organic quantum trap structure. The quantum trap transmission structure is composed by overlapping alternately two kinds of organic material layer formed of a layer of organic material A with wide energy gap and a layer of organic material B with narrow energy gap. Therewith energy level of two kinds of material matches each other (namely, the energy level of the organic material A can enwrap the energy level of the organic material B), forming momentum trap of empty cave at interface of quantum trap. The organic quantum trap structure that adopting on the present invention in the empty cave transmission layer can greatly control charge carrier moving in the empty cave transmission layer, which realizes pouring balance that electron of luminous layer and empty-cave, accordingly improving luminous efficiency and brightness of part. If the organic material B forming the organic momentum trap is a kind of dye material C, the device has different luminescence centers according to the different periods of the organic quantum traps, the hole-electron recombination zone and emission zone of the organic light-emitting devices can be adjusted by controlling the period number of the organic MQW structure in the hole-transporting layer, thereby altering the luminescence center of the device.

Description

A kind of organic electroluminescence device
Technical field
The present invention relates to a kind of organic electroluminescence device, in particular, the present invention relates to a kind of luminous efficiency height, organic electroluminescence device that luminosity is big, also relate to a kind of organic electroluminescence device of the adjustable light center of haircuting.
Background technology
Now, along with the arriving of Development of Multimedia Technology and information-intensive society, more and more higher to the flat-panel monitor performance demands.In recent years emerging three kinds of Display Techniques: plasma display, Field Emission Display and display of organic electroluminescence have all remedied the deficiency of cathode ray tube and LCD to a certain extent.Wherein, a series of advantages such as display of organic electroluminescence has from main light emission, low-voltage DC driven, solidifies entirely, the visual angle is wide, color is abundant, compare with LCD, display of organic electroluminescence does not need backlight, and the visual angle is big, and power is low, its response speed can reach 1000 times of LCD, its manufacturing cost but is lower than the LCD of equal resolution, and therefore, display of organic electroluminescence has broad application prospects.
1987, people such as the C.W.TANG (C.W.Tang of U.S. Kodak company, S.A.Slyke, Appl.Phys.Lett.51,913 (1987)) adopt double-decker first,, very high and can make organic small molecule material---the Alq of the high-quality thin film of even compact with the aromatic diamines analog derivative with Vacuum Coating method with a kind of fluorescence efficiency as hole mobile material 3As the luminescent layer material, prepare higher quantum efficiency (1%), high-luminous-efficiency (＞1.51m/W), high brightness (＞1000cd/m 2) and low driving voltage (＜10V) organic electroluminescence device (Organic ElectroluminescentDevices is hereinafter to be referred as OLEDs) makes the research work in this field enter a brand-new era.Nineteen ninety, Britain Cambridge university Cavan enlightening is permitted breadboard Burroughes and his colleague finds that polymeric material also has good electroluminescent properties, and this important discovery is arrived polymer arts with the research promotion of electroluminescent organic material.Over year, people constantly improve the preparation technology of organic electroluminescence device surplus in the of ten, and its correlation technique development rapidly.
The internal quantum efficiency of OLEDs depends primarily on injection, transmission, the combined efficiency of charge carrier, and the luminous efficiency of device also is subjected to the strong influence of the balance of the numbers of electrons and holes injected simultaneously.At traditional NPB/Alq 3In the bi-layer devices, the cavity transmission ability of NPB is far longer than Alq 3To the transmittability of electronics, therefore caused the serious imbalance of carrier transport in device, thereby reduced the luminous efficiency of device.It is found that, by using suitable hole mobile material or using suitable device architecture to mate electron transport material in the device (as Alq 3Deng) be the effective way that improves device performance.First kind of scheme is to use the way of mixing up to add the rubrene material in hole transmission layer, and people such as Y.Hamada and M.S.Jang (Y.Hamada, T.Sano, K.Shibata, and K.Kuroki, Jpn.J.Appl.Phys., Part 234, L824 (1995); M.S.Jang, S.Y.Song, H.K.Shim, T.Zyung, S.D.Jung, L.M.Do, Synth.Met.91,317 (1997)) all carried out similar research work.People such as Aziz (H.Aziz, Z.Popovic, N.X.Hu, A.M.Hor, and G.Xu, Science 283,1900 (1999); H.Azizand Z.D.Popovic, Appl.Phys.Lett.80,2180 (2002)) think that the mechanism of its effect is to make the rubrene molecule that mixes up take on the effect of hole trap, thereby make the performance of device be improved by mixing up the rubrene material.Another method uses quantum well structure to improve device efficiency exactly.Organic quantum trap improves the device luminous efficiency helping to reduce the OLEDs luminescent spectrum width, and aspects such as switching device glow color have obtained some successes.But organic quantum trap generally is used for improving the electronics of luminescent layer and the concentration in hole in the present research, and then improves the combined efficiency of charge carrier.Such as, people such as N.Tada (N.Tada, S.Tatsuhara, A.Fujii, Y.Ohmori and K.Yoshino, Jpn.J.Appl.Phys.36,421 (1997)) use Alq at the luminescent layer of OLEDs 3With TPD alternate multiple quantum well structure, (luminescent layer only uses Alq to the luminous efficiency of device than traditional structure 3) increase.Similarly experiment further confirms the improvement of this performance, the raising of mainly giving the credit to the luminescent layer carrier concentration.But adopt organic quantum trap at luminescent layer, just improved the concentration of luminescent layer charge carrier, can not make still that at light-emitting zone electronics and hole reach the injection balance, excessive hole still can cause the decline of luminous efficiency.Therefore it is also more limited that luminescent layer adopts the ability of this structure raising charge carrier combined efficiency.
Summary of the invention
The purpose of this invention is to provide a kind of luminous efficiency height, organic electroluminescence device that luminosity is big.
Another object of the present invention provides a kind of organic electroluminescence device of the adjustable light center of haircuting.
For achieving the above object, technical scheme of the present invention provides a kind of organic electroluminescence device, this device comprises transparent substrate, first electrode layer and the second electrode lay, and be clipped in hole transmission layer and electron transfer layer between described first electrode layer, the second electrode lay, it is characterized in that: hole transmission layer adopts organic quantum trap, this quantum well transmission structure replaces overlapping the composition by the wide organic material A that can be with and the narrow two kinds of material layers of organic material B that can be with certain periodicity, and the energy level of these two kinds of organic materials satisfies following relationship:
(I) the highest occupied molecular orbital energy level of organic material A is lower than the highest occupied molecular orbital energy level (hereinafter to be referred as the HOMO energy level) of organic material B,
(II) the lowest unoccupied molecular orbital energy level of organic material A is higher than the lowest unoccupied molecular orbital energy level (hereinafter to be referred as lumo energy) of organic material B, and wherein the periodicity of organic quantum trap is 1～10 integer.
The energy level of two kinds of organic materials that hole transmission layer in the technique scheme adopts matches each other (satisfy simultaneously above-mentioned relation formula (I) and (II)), promptly in organic quantum trap, materials A can be with the parcel that can be with that can realize material B.Because charge carrier tends to move to the energy lower position at the interface, therefore at the interface at materials A layer and B layer, hole and electronics all tend to move to the material B layer, and promptly the materials A layer is to the energy level potential barrier effect of material B layer, make the potential well in electronics and hole all in the material B layer.When transmit via organic quantum trap in the hole, holoe carrier is distributed in the material B layer in a large number, and the probability that distributes in the materials A layer is very little, in the materials A layer, can only transmit by the tunnelling mode, because there are the potential barrier in hole in material B layer and place, materials A bed boundary, tunneled holes A layer need overcome potential barrier and loss of energy simultaneously.Thereby can draw: the energy level potential barrier at (1) interface is big more, and holoe carrier is passed through the interface need consume more energy, thereby has more charge carrier to be bound in inadequately in the material B layer because of energy, can not pass through whole quantum well structure; (2) along with the raising of quantum well periodicity, charge carrier needs the interface of process to increase by the quantum well transmission thereupon, also can make by the number of cavities minimizing of whole quantum well structure, plays the effect of blocking hole.Therefore, material and the periodicity thereof selecting to form quantum well structure can well be controlled the migration of holoe carrier in hole transmission layer, have realized the injection balance in light-emitting zone electronics and hole, thereby have improved the luminous efficiency and the luminosity of device.
At the organic material B described in the technical scheme of the present invention can be a kind of dyestuff C.
Studies show that: in quantum well transport layer structure, the energy level potential barrier at (1) interface is big more, and charge carrier passes through the interface need consume more energy, thereby has more charge carrier to be bound in inadequately in the material C layer because of energy, can not pass through whole quantum well structure; (2) along with the raising of periodicity, charge carrier needs the interface of process to increase by the quantum well transmission thereupon, also can make by the charge carrier quantity minimizing of quantum well structure, plays the effect that stops charge carrier.Therefore, when quantum well when electronics and hole potential barrier are very little at the interface (＜0.4eV), just can be so that most of hole is bound in the quantum well structure, the fraction hole can be crossed quantum well and further be transmitted.Simultaneously, electronics in electron transfer layer be transferred to after this fraction hole-recombination, remaining electronics also can be crossed little quantum well potential barrier, and transmission enters in the hole transmission layer of quantum well structure, further compound with the hole that is strapped in the quantum well, thus realize that two luminescence centers are simultaneously luminous.By regulating the periodicity of organic quantum trap, can so that luminescence center be present in electron transfer layer (this moment periodicity few, quantum well structure is passed through in most of hole, send the EL spectrum of electric transmission layer material) or hole transmission layer (this moment periodicity many, the hole is strapped in the quantum well structure fully, the electron transfer layer electronics imports quantum well structure and hole-recombination into, sends the EL spectrum of organic dyestuff C), perhaps be present in simultaneously in electron transfer layer and the hole transmission layer.So, device has different luminescence centers with the difference of the organic quantum well periodicity in the hole transmission layer, that is to say to change the recombination luminescence zone of electronics and hole in the device by the organic quantum well periodicity of control in the hole transmission layer, and then adjust the luminescence center of device.
Between first electrode layer described in the technical scheme of the present invention and hole transmission layer, one deck resilient coating can be accompanied, one deck transition zone can be accompanied between described hole transmission layer and the electron transfer layer.
The organic electroluminescence device that the present invention proposes has the following advantages:
1. the organic quantum trap that adopts at hole transmission layer can significantly be controlled the migration of holoe carrier in hole transmission layer, thereby has realized the injection balance in light-emitting zone electronics and hole, and then has improved the luminous efficiency and the luminosity of device;
If 2. forming the narrow organic material B that can be with of organic quantum trap is dyestuff C, device has different luminescence centers with the difference of the organic quantum well periodicity in the hole transmission layer, that is to say to change the recombination luminescence zone of electronics and hole in the device by the organic quantum well periodicity of control in the hole transmission layer, and then adjust the luminescence center of device.
Description of drawings
Be illustrated by embodiment, embodiment below in conjunction with accompanying drawing, it is clearer that the present invention can become.
Fig. 1 is the structural representation (comprising dispensable resilient coating and transition zone in the device architecture of schematic diagram) of the organic electroluminescence device that proposes of the present invention, wherein 1 is transparent substrate, 2 is first electrode layer (anode layers), the 3rd, resilient coating, the 4th, hole transmission layer (having organic quantum trap), the 5th, transition zone, the 6th, electron transfer layer, the 7th, the second electrode lay (cathode layer), the 8th, power supply.
Fig. 2, Fig. 3 are the energy level schematic diagrames of the OLEDs of device architecture shown in structural formula (1) that propose of the present invention, and Fig. 3 also shows the distribution of charge carrier in organic quantum trap.
Fig. 4 is that the different cycles that has that the present invention proposes is counted the brightness of the OLEDs of n-current density curve (device architecture is shown in structural formula (1)).
Fig. 5 be the present invention propose have luminous efficiency-current density curve (device architecture is shown in structural formula (1)) that different cycles is counted the OLEDs of n.
Fig. 6 is the energy level schematic diagram of the OLEDs of device architecture shown in structural formula (2) that propose of the present invention.
Fig. 7 is that the different cycles that has that the present invention proposes is counted the brightness of the OLEDs of n-current density curve (device architecture is shown in structural formula (2)).
Fig. 8 be the present invention propose have luminous efficiency-current density curve (device architecture is shown in structural formula (2)) that different cycles is counted the OLEDs of n.
Fig. 9 be the present invention propose have an EL spectrogram (normalization) that different cycles is counted the EL spectrogram of the OLEDs of n (device architecture is shown in structural formula (2)) and had the device of structural formula (5), the n=0 of curve (a) wherein, the n=2 of curve (b), the n=4 of curve (c), the n=6 of curve (d), device architecture such as structural formula (5) that curve (e) is corresponding.
Elaborate content of the present invention below in conjunction with the drawings and specific embodiments, should be appreciated that the present invention is not limited to following preferred implementation, preferred implementation is as just illustrative embodiment of the present invention.
Embodiment
For the purpose of reference, list the abbreviation of the organic material that relates in this specification and the full name table of comparisons as follows:
Table 1
Figure C0312106300101
Be clearer elaboration the specific embodiment of the present invention, embodiment, what time following existing explanation is:
1. the light-emitting zone of the OLEDs of the present invention's proposition is positioned at electron transfer layer or/and hole transmission layer;
2. hole transmission layer, electron transfer layer and the resilient coating that can comprise, the transition zone of the OLEDs of the present invention's proposition all are the organic function layers of OLEDs.
First kind of structure of the organic electroluminescence device that the present invention proposes as shown in Figure 1, wherein: 1 be transparent substrate, can be glass or flexible substrate, a kind of material in flexible substrate employing polyesters, the polyimides compounds; 2 is first electrode layer (anode layer), can adopt inorganic material or organic conductive polymer, inorganic material is generally the higher metals of work function such as metal oxides such as tin indium oxide (hereinafter to be referred as ITO), zinc oxide, zinc tin oxide or gold, copper, silver, the optimized ITO that is chosen as, organic conductive polymer are preferably a kind of material among PEDOT, the PANI; 3 is resilient coating, generally adopts a kind of material in phthalocyanines, polyacrylate, polyimide, fluoropolymer, inorganic fluoride salt, inorganic oxide or the diamond, and the present invention is preferably CuPc; 4 is hole transmission layer, adopt organic quantum trap, this quantum well transmission structure replaces overlapping the composition by the wide organic material A that can be with and the narrow two kinds of material layers of organic material B that can be with, the energy level of these two kinds of materials matches each other and (promptly satisfies above-mentioned relation formula (I) and (II) simultaneously, materials A can be with the parcel that can be with that can realize material B), and because the materials A layer is to the energy level potential barrier effect of material B layer, make the potential well in electronics and hole in the material B layer, materials A is that the triphen amine is (as NPB, TPD, MTDATA), carbazoles is (as PVK, BCP, Bphen), pyrrolin Lei Huo oxadiazole class is (as TPBi, PBD) a kind of material in the compound, material B is that phthalocyanines is (as CuPc, H 2Pc, VOPc) a kind of material in the compound, first kind of structure optimization is (NPB/CuPc) nThe multi-layer quantum well structure, the HOMO energy level of NPB and CuPc is respectively-5.5eV ,-4.8eV, LUMO is respectively-2.5eV ,-2.7eV, from this preferred (NPB/CuPc) nThe energy level schematic diagram (seeing Fig. 2, Fig. 3) of making the device of hole transmission layer as can be seen because the NPB layer to the potential barrier effect of CuPc layer, has formed the potential well in electronics and hole in the CuPc layer; 5 is transition zone, adopts the material that is complementary with electric transmission layer material energy level, if the multi layer quantum well structure optimization of hole transmission layer is (NPB/CuPc) n, transition zone is preferably NPB; 6 is electron transfer layer, generally adopts a kind of material in the metal organic complex Huo oxadiazole compounds, through being preferably Alq 3, Al (Saph-q), Ga (Saph-q), Zn (Ac) 2In a kind of material; 7 is the second electrode lay (cathode layer, metal level), generally adopts the alloy of the lower metal of work functions such as lithium, magnesium, calcium, strontium, aluminium, indium or they and copper, gold, silver, and the present invention is preferably Mg successively: Ag alloy-layer, Ag layer; 8 is power supply.
The OLEDs of above-mentioned first kind of structure optimization has following structural formula (1):
Glass/ITO/CuPc/(NPB/CuPc) n/NPB/Alq 3/Mg∶Ag/Ag (1)
Wherein n is the periodicity of NPB/CuPc quantum well, and the n value can be 1～10 integer.According to said structure formula (1), be described below in conjunction with the detailed execution mode of preparation process of device:
1. utilize the ultrasonic and ultrasonic method of deionized water of the washing agent boil that the transparent conduction base sheet ito glass is cleaned, and be placed under the infrared lamp oven dry, wherein the ITO film above the conductive substrate is as the anode layer of device, the square resistance of ITO film is 5 Ω～100 Ω, and thickness is 80.0～280.0nm;
2. the ito glass behind the above-mentioned cleaning, drying being placed pressure is 1 * 10 -5～5 * 10 -3In the vacuum chamber of Pa, evaporation one deck CuPc is as the resilient coating of device on above-mentioned ITO film, and the evaporation speed of film is 0.02～0.4nm/s, and thickness is 0.5～20.0nm;
3. on above-mentioned CuPc resilient coating, continue the evaporation hole transmission layer, this hole transmission layer adopts the alternately NPB/CuPc organic multi-quantum pit structure in n cycle, wherein the evaporation speed of CuPc film is 0.02～0.4nm/s, the thickness of each layer CuPc is 0.5～10.0nm in the quantum well structure, the evaporation speed of NPB film is 0.1～0.6nm/s, and the thickness of each layer NPB is 0.5～30.0nm in the quantum well structure;
4. continue the transition zone of evaporation one deck NPB as device on above-mentioned hole transmission layer, the evaporation speed of film is 0.1～0.6nm/s, and thickness is 10.0～45.0nm;
5. on above-mentioned NPB transition zone, continue evaporating Al q 3As the electron transfer layer and the electroluminescence layer of device, the evaporation speed of film is 0.1～0.6nm/s, and thickness is 40.0～100.0nm;
6. last, at above-mentioned Alq 3Evaporation Mg successively on the film: Ag alloy-layer, Ag layer are as the cathode layer of device, wherein Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, the total speed of evaporation is 0.6～2.0nm/s, the evaporation gross thickness is 50.0～200.0nm, the evaporation speed of Ag layer is 0.3～0.8nm/s, and thickness is 40.0～200.0nm.
Second kind of structure of the organic electroluminescence device that the present invention proposes be (no resilient coating 3) as shown in Figure 1, and wherein: 1,2 with above-mentioned first kind of structure; 4 is hole transmission layer, adopt organic quantum trap, this quantum well transmission structure replaces overlapping the composition by the wide organic material A that can be with and the narrow two kinds of material layers of organic dyestuff C that can be with, the energy level of these two kinds of materials matches each other and (promptly satisfies above-mentioned relation formula (I) and (II) simultaneously, materials A can be with the parcel that can be with that can realize material C), and because the materials A layer is to the energy level potential barrier effect of material C layer, make the potential well in electronics and hole in the material C layer, materials A is that the triphen amine is (as NPB, TPD, MTDATA), carbazoles is (as PVK, BCP, Bphen), pyrrolin Lei Huo oxadiazole class is (as TPBi, PBD) a kind of material in the compound, material C is that the polyphenyl class is (as rubrene, pentacene), Coumarins (as C545T) or two pyrans class are (as DCJTB, DCM) a kind of material in the compound, second kind of structure optimization is the multi-layer quantum well structure of (NPB/rubrene) n, the HOMO energy level of NPB and rubrene is respectively-5.5eV,-5.4eV, lumo energy is respectively-2.5eV,-3.2eV, do from this preferred (NPB/rubrene) n hole transmission layer device energy level schematic diagram (see figure 6) as can be seen, because the energy level potential barrier at NPB layer and place, rubrene bed boundary, holoe carrier just can be by enrichment and constraint in the rubrene layer in device; 5 is transition zone, and the material that the energy level of employing and electron transfer layer is complementary is if the multi layer quantum well structure optimization of hole transmission layer is (NPB/rubrene) n, transition zone is preferably NPB; 6,7 with above-mentioned first kind of structure.
The OLEDs of above-mentioned second kind of structure optimization has following structural formula (2):
Glass/ITO/(NPB/rubrene)n/NPB/Alq 3/Mg∶Ag/Ag (2)
Wherein n is the periodicity of NPB/rubrene quantum well, and the n value can be 1～10 integer.According to said structure formula (2), be described below in conjunction with the detailed execution mode of preparation process of device:
1. utilize the ultrasonic and ultrasonic method of deionized water of the washing agent boil that the transparent conduction base sheet ito glass is cleaned, and be placed under the infrared lamp oven dry, wherein the ITO film above the conductive substrate is as the anode layer of device, the square resistance of ITO film is 5 Ω～100 Ω, and thickness is 80.0～280.0nm;
2. the ito glass behind the above-mentioned cleaning, drying being placed pressure is 1 * 10 -5～5 * 10 -3In the vacuum chamber of Pa, evaporation hole transmission layer on above-mentioned ITO film, this hole transmission layer adopts the alternately NPB/rubrene organic multi-quantum pit structure in n cycle, wherein the evaporation speed of rubrene film is 0.02～0.4nm/s, the thickness of each layer rubrene is 0.5～10.0nm in the quantum well structure, the evaporation speed of NPB film is 0.1～0.6nm/s, and the thickness of each layer NPB is 0.5～30.0nm in the quantum well structure;
3. continue the transition zone of evaporation one deck NPB as device on above-mentioned hole transmission layer, the evaporation speed of film is 0.1～0.6nm/s, and thickness is 10.0～45.0nm;
4. on above-mentioned NPB transition zone, continue evaporating Al q 3As the electron transfer layer and the electroluminescence layer of device, the evaporation speed of film is 0.1～0.6nm/s, and thickness is 40.0～100.0nm;
5. last, at above-mentioned Alq 3Evaporation Mg successively on the film: Ag alloy-layer, Ag layer are as the cathode layer of device, wherein Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, the total speed of evaporation is 0.6～2.0nm/s, the evaporation gross thickness is 50.0～200.0nm, the evaporation speed of Ag layer is 0.3～0.8nm/s, and thickness is 40.0～200.0nm.
Embodiment 1-3
With with above-mentioned three OLEDs of device is identical shown in the structural formula (1) method preparation that prepare.And for the ease of the contrast of device performance, the thickness of the ITO layer of three OLEDs is 200.0nm, and the thickness of CuPc resilient coating is 6.0nm, and the thickness of NPB transition zone is 15.0nm, Alq 3The thickness of electron transfer layer is 60.0nm, Mg: the thickness of Ag alloy-layer and Ag layer is respectively 100.0nm, among three OLEDs the thickness of each layer film of alternating N PB/CuPc film with different variation of periodicity n, the total film thickness of the NPB in n cycle, CuPc film is respectively 15.0nm, 6.0nm.The structure of three OLEDs is shown in following table 2,3, and the brightness of device-current density curve, luminous efficiency-current density curve are seen Fig. 4, Fig. 5 respectively.
Comparative Examples 1
With method preparation traditional OLED same with embodiment 1-3, but do not prepare alternating N PB/CuPc film (n=0) in this traditional devices, the thickness of CuPc shown in the following table 3, NPB layer is respectively 12.0nm, 30.0nm.This device has following structural formula (3):
Glass/ITO/CuPc/NPB/Alq 3/Mg∶Ag/Ag (3)
Hole transmission layer adopts among the OLEDs of NPB/CuPc organic quantum trap, and periodicity n is as shown in table 3 below to the influence of device performance.
Table 2
n The OLED structure
Comparative Examples 1 embodiment 1 embodiment 2 embodiment 3 0 2 4 6 Glass/ITO/CuPc(12.0nm)/NPB(30.0nm)/Alq 3(60.0nm)/Mg:Ag/Ag Glass/ITO/CuPc(6.0nm)/[NPB(7.5nm)/CuPc(3.0nm)] 2/NPB(15.0nm)/Alq 3(60.0nm)/Mg∶Ag/Ag Glass/ITO/CuPc(6.0nm)/[NPB(3.8nm)/CuPc(1.5nm)] 4/NPB(15.0nm)/Alq 3(60.0nm)/Mg∶Ag/Ag Glass/ITO/CuPc(6.0nm)/[NPB(2.5nm)/CuPc(1.0nm)] 6/NPB(15.0nm)/Alq 3(60.0nm)/Mg∶Ag/Ag
Table 3
Comparative Examples 1 Embodiment 1 Embodiment 2 Embodiment 3
Periodicity 0 2 4 6
Layer Material Thickness/nm
Anode layer ITO 200.0
Resilient coating CuPe 12.0 6.0 6.0 6.0
Hole transmission layer NPB 0 7.5 3.8 2.5
CuPc 0 3.0 1.5 1.0
Transition zone NPB 30.0 15.0 15.0 15.0
Electron transfer layer Alq 3 60.0
Cathode layer Mg:Ag 100.0
Ag 100.0
Device Current density/A/m 2 400
Brightness/cd/m 2 1400 1960 3900 800
Parameter Luminous efficiency/cd/A 3.8 4.3 9.8 2.3
Original intensity/cd/m 2 1000
T 1/2/h 2.5 2.7 3.5 2
Life-span/h 25 27 35 20
As can be seen from Table 3, under experiment condition of the present invention, the quantum well periodicity is 4 o'clock, and device performance is best.Current density is 34mA/cm 2The time, the respective devices peak efficiency can reach 10.8cd/A, and this is Alq in the finding work so far 3Do not mix up the highest report of the luminous efficient of dyestuff body.(n=0) compares with traditional device, and device performance has improved nearly 3 times.
The quantum well periodicity is 6 o'clock, because layers of material thickness is too thin in the quantum well, and the quality of forming film variation, thus reduced device performance.On universal significance, along with periodicity improves, and if each layer thickness not too low (the guaranteed thickness of quality of forming film) in the quantum well, device performance can increase to some extent.
Embodiment 4
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 15 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 180.0nm.It is 1 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation CuPc buffer thin film on the ITO film, evaporation speed is 0.04nm/s, and thickness is 6.0nm.On the CuPc buffer thin film, continue evaporation alternate multiple hole transmission layer (NPB/CuPc) 6, wherein the evaporation speed of NPB film is 0.2nm/s, and thickness is 3.8nm, and the evaporation speed of CuPc film is 0.04nm/s, and thickness is 1.5nm.The NPB layer that continues evaporation 15.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.4nm/s, on continue evaporation organic function layer Alq 3, evaporation speed is 0.2nm/s, thickness is 60.0nm.At Alq 3Continue evaporated metal layer on the layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, and the total speed of evaporation is 1.5nm/s, and thickness is 100.0nm; The evaporation speed of Ag is 0.5nm/s, and evaporation thickness is 100.0nm.It is 2.5V that device opens bright voltage, and maximum luminousing brightness is 16000cd/m 2, current density is 36mA/cm 2The time, corresponding maximum luminous efficiency is 10.8cd/A.
Embodiment 5
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 60 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 100.0nm.It is 2 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation CuPc buffer thin film on the ITO film, evaporation speed is 0.06nm/s, and film thickness is 8.0nm.On the CuPc buffer thin film, continue evaporation alternate multiple hole transmission layer (NPB/CuPc) 2, wherein the evaporation speed of NPB film is 0.2nm/s, and thickness is 7.5nm, and the evaporation speed of CuPc film is 0.06nm/s, and thickness is 3.0nm.The NPB layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Al (Saph-q), evaporation speed is 0.2nm/s, thickness is 60.0nm.Continue evaporated metal layer on Al (Saph-q) layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, and the total speed of evaporation is 1.5nm/s, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.8V that device opens bright voltage, and maximum luminousing brightness is 13000cd/m 2
Embodiment 6
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 30 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 140.0nm.It is 1.5 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation CuPc buffer thin film on the ITO film, evaporation speed is 0.03nm/s, and film thickness is 4.0nm.On the CuPc buffer thin film, continue evaporation alternate multiple hole transmission layer (NPB/CuPc) 8, wherein the evaporation speed of NPB film is 0.2nm/s, and thickness is 2.0nm, and the evaporation speed of CuPc film is 0.02nm/s, and thickness is 0.75nm.The NPB layer that continues evaporation 20.0nm on this transport layer is as transition layer structure, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Zn (Ac) 2, evaporation speed is 0.2nm/s, thickness is 60.0nm.At Zn (Ac) 2Continue evaporated metal layer on the layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, and the total speed of evaporation is 1.5nm/s, and thickness is 180.0nm; The evaporation speed of Ag is 0.5nm/s, and evaporation thickness is 50.0nm.It is 2.9V that device opens bright voltage, and maximum luminousing brightness is 12000cd/m 2
Embodiment 7-9
With with above-mentioned three OLEDs of device is identical shown in the structural formula (2) method preparation that prepare.And for the ease of the contrast of device performance, the thickness of the ITO layer of three OLEDs is 240.0nm, and the total film thickness of NPB film (comprising transition zone) is 40.0nm, and the total film thickness of the rubrene film in n cycle is 8.0nm, Alq 3The thickness of electron transfer layer is 60.0nm, Mg: the thickness of Ag alloy-layer and Ag layer is respectively 100.0nm, just the thickness of each layer rubrene film of alternating N PB/rubrene film changes with the difference of periodicity n among three OLEDs, and the thickness of each layer NPB film is 5.0nm.The structure of three OLEDs is shown in following table 4,5, and the brightness of device-current density curve, luminous efficiency-current density curve are seen Fig. 7, Fig. 8 respectively.
Comparative Examples 2
Traditional OLED of method preparation with same with embodiment 7-9 does not prepare alternating N PB/rubrene film (n=0) in this traditional devices, the thickness of NPB layer shown in the following table 4 is 40.0nm.This device has following structural formula (4):
Glass/ITO/NPB/Alq 3/Mg∶Ag/Ag (4)
Table 4
n The OLED structure
Comparative Examples 2 embodiment 7 embodiment 8 embodiment 9 0 2 4 6 Glass/ITO/NPB(40.0nm)/Alq 3(60.0nm)/Mg∶Ag/Ag Glass/ITO/[NPB(5.0nm)/rubrene(4.0nm)] 2/NPB(30.0nm)/Alq 3(60.0nm)/Mg∶Ag/Ag Glass/ITO/[NPB(5.0nm)/rubrene(2.0nm)] 4/NPB(20.0nm)/Alq 3(60.0nm)/Mg∶Ag/Ag Glass/ITO/[NPB(5.0nm)/rubrene(1.3nm)] 6/NPB(10.0nm)/Alq 3(60.0nm)/Mg∶Ag/Ag
Comparative Examples 3
With method preparation traditional OLED identical with embodiment 7-9, do not prepare alternating N PB/rubrene film (n=0) in this traditional devices, but the electron transfer layer thick Alq layer that has mixed up 2wt%rubrene that is 60.0nm, device architecture is as shown in following table 5, and this device has following structural formula (5):
Glass/ITO/NPB/Alq 3:rubrene(2wt％)/Mg∶Ag/Ag (5)
Figure 9 shows that the EL spectrogram of above-mentioned OLEDs, curve (a) and (b), (c), (d) be corresponding respectively, and to have the quantum well periodicity be 0,2,4,6 organic electroluminescence device, and curve (e) correspondence has the device (sending yellow light from rubrene) of said structure formula (5).We observe the increase along with periodicity n, and the EL spectrum that the present invention has the device of NPB/rubrene organic quantum trap has obviously mobile.(curve a) sends the Alq of 520nm to the device of n=0 3Green emitting, yet see from the EL spectrogram of the device (curve c) of the device (curve b) of n=2 and n=4 and to have presented the luminous of rubrene, simultaneously near 520nm with Alq 3The acromion of material.It is worthy of note that the luminous of the device of n=6 (curve d) all has been the luminous of rubrene basically, almost can't see Alq 3Luminous and do not have the spectrum peak of traditional devices (curve e) of quantum well structure identical substantially, this expression charge carrier only is limited in carrying out in the rubrene layer compound.
Above-mentioned work confirms that organic quantum trap not only can be regulated and control the transmission in hole, simultaneously also can be by changing the luminescence center that the organic quantum well periodicity comes control device.
In organic electroluminescence device, introduce organic quantum well hole transport structure, the effectively transmission in hole in the control device, thus help the injection balance in electron gain and hole, and then the luminous efficiency of raising device.Simultaneously, owing to use the independent stratification of dyestuff in the organic quantum trap, studies show that of EL spectrum, by changing the effectively luminescence center of control device of quantum well periodicity, this provides useful reference for realization different colours luminous.
Hole transmission layer adopts among the OLEDs of NPB/rubrene organic quantum trap, and periodicity n is as shown in table 5 below to the influence of device performance.
Table 5
Comparative Examples 2 Embodiment 7 Embodiment 8 Embodiment 9 Comparative Examples 3
Periodicity 0 2 4 6 0
Layer Material Thickness/nm
Anode layer ITO 240.0
Hole transmission layer NPB 0 5.0 5.0 5.0 0
rubrene 0 4.0 2.0 1.3 0
Transition zone NPB 40.0 30.0 20.0 10.0 40.0
Electron transfer layer Alq 3 60.0 60.0 60.0 60.0 (60.0 mixing up 2wt %rubrene)
Cathode layer Mg∶Ag 100.0
Ag 100.0
Device parameters Current density/A/m 2 3000
Brightness/cd/m 2 6160 9000 17800 13500
Luminous efficiency/cd/A 2.01 3.03 6.00 4.46
Emission wavelength/nm 528 548 556 560 564
As can be seen from Table 5, under experiment condition of the present invention, quantum well periodicity n is 4 o'clock, and the brightness and the luminous efficiency of device are best.And when the quantum well periodicity is 6, because each tunic thickness is too thin in the quantum well, can not forms high-quality continuous film, thereby destroy the structure of quantum well, device efficiency descends on the contrary.Therefore, under the prerequisite of not destroying quantum well structure, improve the periodicity of device, can further improve the efficient of device.Simultaneously, we can also find that along with the raising of periodicity n, the luminous ratio that occupies of rubrene is more and more higher in device is luminous, thus the red shift of EL spectral color, and this luminescence center that fully proves device is along with the raising of periodicity is shifted to the rubrene layer.And organic quantum well periodicity n is high more, helps more to the luminous transfer of rubrene layer.
Embodiment 10-13
With preparing the device of embodiment 10-13 with the same method of embodiment 7-9, the periodicity of each device is 4, and the structure of device is as shown in table 6 below.Hole transmission layer adopts among the OLEDs of NPB/rubrene organic quantum trap, and the NPB thickness is also as shown in table 6 below to the influence of device performance.
Table 6
Embodiment 10 Embodiment 11 Embodiment 12 Embodiment 13
Periodicity 4
Layer Material Thickness/nm
Anode layer ITO 240.0 240.0 240.0 240.0
Hole transmission layer NPB 1.0 3.0 5.0 7.0
rubrene 2.0
Transition zone NPB 36.0 28.0 20.0 12.0
Electron transfer layer Alq 3 60.0
Cathode layer Mg:Ag 100.0
Ag 100.0
Device parameters Current density/A/m 2 3000
Brightness/cd/m 2 15000 24000 18000 17400
Luminous efficiency/cd/A 5.00 8.00 6.00 5.80
As can be seen from Table 6, when the NPB layer thickness was 3.0nm, device performance was best.And when thickness was 1.0nm, device was because the destroyed device performance that causes of quantum well structure descends.Therefore, the NPB layer thickness is thin more, helps improving device performance more.
Embodiment 14-17
With preparing the device of embodiment 14-17 with the same method of embodiment 7-9, the periodicity of each device is 4, and the structure of device is as shown in table 7 below.Hole transmission layer adopts among the OLEDs of NPB/rubrene organic quantum trap, and the rubrene thickness is also as shown in table 7 below to the influence of device performance.
Table 7
Embodiment 14 Embodiment 15 Embodiment 16 Embodiment 17
Periodicity 4
Layer Material Thickness/nm
Anode layer ITO 240.0
Hole transmission layer NPB 5.0
rubrene 1.0 2.0 4.0 6.0
Transition zone NPB 20.0
Electron transfer layer Alq 3 60.0
Cathode layer Mg∶Ag 100.0
Ag 100.0
Device parameters Current density/A/m 2 3000
Brightness/cd/m 2 10500 18000 15000 15000
Luminous efficiency/cd/A 3.50 6.00 5.00 5.00
As can be seen from Table 7, changing the rubrene layer thickness influences less to device performance.Except that 1.0nm destroys quantum well structure, can select relatively thinner thickness according to the condition of technology.The present invention is preferably 2.0nm.
Embodiment 18-21
Prepare the device of embodiment 18-21 with the method identical with embodiment 7-9, the periodicity of each device is 4, and the structure of device is as shown in table 8 below.Hole transmission layer adopts among the OLEDs of organic quantum trap, in electric transmission layer material and the quantum well structure changes in material to the influence of device performance also as shown in following table 8.
Table 8
Embodiment 18 Embodiment 19 Embodiment 20 Embodiment 21
Layer Material Thickness/nm
Periodicity
4
Anode layer ITO 240.0
Hole transmission layer The NPB potential barrier 5.0 5.0 5.0 5.0
Potential well Material CuPc rubrene rubrene DCJTB
2.0 2.0 2.0 2.0
Transition zone NPB 20.0 20.0 20.0 20.0
Electron transfer layer Material Alq 3 Alq 3 Al(Saph-q) Ga(Saph-q)
60.0 60.0 60.0 60.0
Cathode layer Mg∶Ag 100.0
Ag 100.0
Device parameters Current density/A/m 2 3000
Brightness/cd/m 2 22000 17800 25800 9500
Luminous efficiency/cd/A 7.03 5.90 8.60 3.17
Emission wavelength/nm 528 550 560 620
Embodiment 22-24
Prepare the device of embodiment 22-24 with the method identical with embodiment 7-9, the structure of device is as shown in table 9 below.
Comparative Examples 4
With OLED of the method identical preparation with embodiment 22-24, do not prepare alternating N PB/rubrene film (n=0) in this device, device architecture as shown in following table 9,
Hole transmission layer adopts among the OLEDs of NPB/rubrene organic quantum trap, and periodicity n is as shown in table 9 below to the influence of device lifetime.
Table 9
Comparative Examples 4 Embodiment 22 Embodiment 23 Embodiment 24
Periodicity 0 1 4 6
Layer Material Thickness/nm
Anode layer ITO 240.0
Hole transmission layer NPB 0 5.0 5.0 5.0
rubrene 0 8.0 2.0 1.3
Transition zone NPB 40.0 35.0 20.0 10.0
Electron transfer layer Alq 3 60.0
Cathode layer Mg∶Ag 100.0
Ag 100.0
Device parameters Original intensity/cd/m 2 1000
T 12/h 2.5 2.4 2.6 1.5
Life-span/h 25 24 26 15
Embodiment 25
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 60 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 100.0nm.It is 2 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (NPB/rubrene) on the ITO film 4, wherein the evaporation speed of NPB film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of rubrene film is 0.1nm/s, and thickness is 2.0nm.The NPB layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Al (Saph-q), evaporation speed is 0.2nm/s, thickness is 60.0nm.Continue evaporated metal layer on Al (Saph-q) layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, the total speed of evaporation is 1.5nm/s, thickness is 150.0nm, and the evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.8V that device opens bright voltage, and maximum luminousing brightness is 16000cd/m 2
Embodiment 26
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 15 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 260.0nm.It is 1 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize the CuPc resilient coating of thermal evaporation method evaporation 10.0nm on the ITO film, evaporation speed is 0.02nm/s.Thereafter, evaporation alternate multiple hole transmission layer (NPB/rubrene) in the above 3, wherein the evaporation speed of NPB film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of rubrene film is 0.1nm/s, and thickness is 2.0nm.The NPB layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Al (Saph-q), evaporation speed is 0.2nm/s, thickness is 60.0nm.Continue evaporated metal layer on Al (Saph-q) layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, and the total speed of evaporation is 1.5nm/s, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.5V that device opens bright voltage, and maximum luminousing brightness is 26000cd/m 2
Embodiment 27
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 100 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 60.0nm.It is 2 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (MTDATA/rubrene) on the ITO film 10, wherein the evaporation speed of MTDATA film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of rubrene film is 0.1nm/s, and thickness is 2.0nm.The NPB layer that continues evaporation 5.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Alq 3, evaporation speed is 0.2nm/s, thickness is 60.0nm.At Alq 3Continue evaporated metal layer on the layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, and the total speed of evaporation is 1.5nm/s, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.8V that device opens bright voltage, and maximum luminousing brightness is 14000cd/m 2
Embodiment 28
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 60 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 100.0nm.It is 2 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (TPD/DCJTB) on the ITO film 4, wherein the evaporation speed of TPD film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of DCJTB film is 0.1nm/s, and thickness is 2.0nm.The TPD layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Alq 3, evaporation speed is 0.2nm/s, thickness is 60.0nm.At Alq 3Continue evaporated metal layer on the layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, and the total speed of evaporation is 1.5nm/s, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.8V that device opens bright voltage, and maximum luminousing brightness is 12000cd/m 2
Embodiment 29
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 40 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 150.0nm.It is 1 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (MTDATA/rubrene) on the ITO film 4, wherein the evaporation speed of MTDATA film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of rubrene film is 0.2nm/s, and thickness is 2.0nm.The MTDATA layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Alq 3, evaporation speed is 0.2nm/s, thickness is 60.0nm.At Alq 3Continue evaporated metal layer on the layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, and the total speed of evaporation is 1.5nm/s, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.8V that device opens bright voltage, and maximum luminousing brightness is 18000cd/m 2
Embodiment 30
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 10 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 280.0nm.It is 4 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (NPB/C545T) on the ITO film 4, wherein the evaporation speed of NPB film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of C545T film is 0.1nm/s, and thickness is 2.0nm.The NPB layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Alq 3, evaporation speed is 0.2nm/s, thickness is 60.0nm.At Alq 3Continue evaporated metal layer on the layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, and the total speed of evaporation is 1.5nm/s, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.5V that device opens bright voltage, and maximum luminousing brightness is 28000cd/m 2
Embodiment 31
The ultrasonic method of the ultrasonic and deionized water of the washing agent that utilization is boiled is that the ito glass of 20 Ω cleans to square resistance, and is placed on infrared lamp under and dries, and wherein the thickness of ITO is 220.0nm.It is 3 * 10 that ito glass after the oven dry is placed pressure -3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (MTDATA/DCM) on the ITO film 5, wherein the evaporation speed of MTDATA film is 0.1nm/s, and thickness is 5.0nm, and the evaporation speed of DCM film is 0.05nm/s, and thickness is 2.0nm.The NPB layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Bphen, evaporation speed is 0.2nm/s, thickness is 60.0nm.Continue evaporated metal layer on the Bphen layer, metal level is successively by Mg: Ag alloy-layer and Ag layer are formed, and Mg, Ag evaporation speed ratio are 10: 1 in the alloy-layer, and the total speed of evaporation is 1.5nm/s, and thickness is 150nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.5V that device opens bright voltage, and maximum luminousing brightness is 28000cd/m 2
Although describe the present invention in conjunction with the preferred embodiments, but the present invention is not limited to the foregoing description and accompanying drawing, should be appreciated that under the guiding of the present invention's design, those skilled in the art can carry out various modifications and improvement, and claims have been summarized scope of the present invention.

Claims (13)

1. organic electroluminescence device, this device comprises transparent substrate (1), first electrode layer (2) and the second electrode lay (7), and be clipped in hole transmission layer (4) and electron transfer layer (6) between described first electrode layer (2), the second electrode lay (7), it is characterized in that: hole transmission layer (4) adopts organic quantum trap, this quantum well transmission structure replaces overlapping the composition by the wide organic material A that can be with and the narrow two kinds of material layers of organic material B that can be with certain periodicity, and the energy level of these two kinds of organic materials satisfies following relationship:
(I) the highest occupied molecular orbital energy level of organic material A is lower than the highest occupied molecular orbital energy level of organic material B,
(II) the lowest unoccupied molecular orbital energy level of organic material A is higher than the lowest unoccupied molecular orbital energy level of organic material B, and wherein the periodicity of organic quantum trap is 1～10 integer.
2. organic electroluminescence device according to claim 1 is characterized in that, the thickness of described organic material A layer is 0.5～30.0nm, and the thickness of described organic material B layer is 0.5～10.0nm.
3. organic electroluminescence device according to claim 1 is characterized in that, described organic material B is a kind of dyestuff C.
4. organic electroluminescence device according to claim 1, it is characterized in that, accompany one deck resilient coating (3) between described first electrode layer (2) and the hole transmission layer (4), accompany one deck transition zone (5) between described hole transmission layer (4) and the electron transfer layer (6).
5. organic electroluminescence device according to claim 4 is characterized in that, described resilient coating (3) is made up of copper phthalocyanine, and described transition zone (5) is by N, N '-two-(1-naphthyl)-N, and N '-diphenyl-1,1 '-xenyl-4,4 '-diamines is formed.
6. organic electroluminescence device according to claim 1, it is characterized in that, described organic material A is a kind of material in triphen amine, carbazoles, pyrrolin class or the oxadiazole compounds, and described organic material B is a kind of material in the phthalocyanine-like compound.
7. organic electroluminescence device according to claim 6 is characterized in that, described triphenylamine compounds comprises N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1 '-xenyl-4,4 '-diamines, N, N '-diphenyl-N, N '-two (aminomethyl phenyl)-1,1 '-xenyl-4,4 '-diamines or 4,4 '; 4 "-three (3-aminomethyl phenyl aniline) triphenylamine, described carbazole compound comprises Polyvinyl carbazole, 2,9-dimethyl-4,7-diphenyl-1,10-o-phenanthroline or 4,7-diphenyl-1,10-o-phenanthroline, Suo Shu De oxadiazole compounds comprises three-[1-phenyl-1H-benzimidazolyl]-(1,3, the 5-trisubstituted benzene) or 2-(4-t-butyl-phenyl)-5-(4-xenyl)-1,3, the 4-oxadiazole, described phthalocyanine-like compound comprises copper phthalocyanine, phthalocyanine or vanadyl phthalocyanine.
8. organic electroluminescence device according to claim 7 is characterized in that, described organic material A is N, N '-two-(1-naphthyl)-N, and N '-diphenyl-1,1 '-xenyl-4,4 '-diamines, described organic material B is a copper phthalocyanine.
9. organic electroluminescence device according to claim 1 is characterized in that, described electron transfer layer (6) adopts a kind of material in the metal organic complex Huo oxadiazole compounds.
10. organic electroluminescence device according to claim 9, it is characterized in that described electron transfer layer (6) adopts three (oxine) aluminium, (the adjacent amine phenol of salicylidene)-(oxine) to close aluminium (III), (salicylidene neighbour amine phenol)-(oxine) closes a kind of material in gallium (III) or the 4-hydroxy-acridine zinc.
11. organic electroluminescence device according to claim 3, it is characterized in that, described organic material A is a kind of material in triphen amine, carbazoles, pyrrolin class or the oxadiazole compounds, and described organic dyestuff C is a kind of material in polyphenyl class, Coumarins or the two pyran compounds.
12. organic electroluminescence device according to claim 11 is characterized in that, described polyphenyl compounds comprises 5,6,11,12-tetraphenyl aphthacene or pentacene, described Coumarins dyestuff comprises 10-(2-[4-morpholinodithio)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydrochysene-1H, 5H, 11H-benzo [1] pyrans [6,7,8-ij] the quinoline piperazine, described pair of pyran compounds comprises the 4-dicyano methylene-2-tert-butyl group-6-(1,1,7,7-tetramethyl-julolidine-9-vinyl)-4H-pyrans or 4-methylene dicyanoethyl-2-methyl-6-(p-dimethylamino styryl)-4H-pyrans.
13. organic electroluminescence device according to claim 12 is characterized in that, described organic material A is N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1 '-xenyl-4,4 '-diamines, described organic dyestuff C is 5,6,11,12-tetraphenyl aphthacene.
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US7538341B2 (en) 1999-12-31 2009-05-26 Lg Chem, Ltd. Electronic device comprising organic compound having p-type semiconducting characteristics
US7560175B2 (en) 1999-12-31 2009-07-14 Lg Chem, Ltd. Electroluminescent devices with low work function anode
US7763882B2 (en) 1999-12-31 2010-07-27 Lg Chem, Ltd. Organic light-emitting device comprising buffer layer and method for fabricating the same
US8253126B2 (en) 1999-12-31 2012-08-28 Lg Chem. Ltd. Organic electronic device
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US7538341B2 (en) 1999-12-31 2009-05-26 Lg Chem, Ltd. Electronic device comprising organic compound having p-type semiconducting characteristics
US7560175B2 (en) 1999-12-31 2009-07-14 Lg Chem, Ltd. Electroluminescent devices with low work function anode
US7648779B2 (en) 1999-12-31 2010-01-19 Lg Chem, Ltd. Electroluminescent devices with low work function anode
US7648780B2 (en) 1999-12-31 2010-01-19 Lg Chem, Ltd. Electroluminescent devices with low work function anode
US7763882B2 (en) 1999-12-31 2010-07-27 Lg Chem, Ltd. Organic light-emitting device comprising buffer layer and method for fabricating the same
US8253126B2 (en) 1999-12-31 2012-08-28 Lg Chem. Ltd. Organic electronic device
CN100433400C (en) * 2005-01-17 2008-11-12 财团法人工业技术研究院 Organic macromolecular LED apparatus and its display utilizing the LED apparatus
US8680693B2 (en) 2006-01-18 2014-03-25 Lg Chem. Ltd. OLED having stacked organic light-emitting units

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