CN1385902A - Electrostatic discharge protective circuit - Google Patents
Electrostatic discharge protective circuit Download PDFInfo
- Publication number
- CN1385902A CN1385902A CN 01116071 CN01116071A CN1385902A CN 1385902 A CN1385902 A CN 1385902A CN 01116071 CN01116071 CN 01116071 CN 01116071 A CN01116071 A CN 01116071A CN 1385902 A CN1385902 A CN 1385902A
- Authority
- CN
- China
- Prior art keywords
- aforementioned
- transistor
- nmos pass
- pass transistor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
This invention discloses an electro static discharge protection circuit using matrix trigger technology to protect electro static discharging to high and low voltage output and input circuit containing a NMOS transistors with a first NMOS and second transistors, a parasitic side double carrier transistor, a trigger current generating circuit and a parasitic base plate resistor. This invention can increase high low voltage common containined output, input circuit electro static discharge protection ability.
Description
The present invention relates to the electrostatic defending field of integrated circuit, particularly utilize a kind of electrostatic storage deflection (ESD) protection circuit of the high-low pressure output/input circuit of matrix triggering technique.
In order to constitute high circuit aggregation density and to reach the function of expection, the burning half field effect transistor (MOSFET) of minification has been used in the advanced integrated circuit technique.But, in many integrated circuit techniques, also operating voltage (power supplyvoltage) is reduced pari passu in order to meet fixing field than (field scaling) demand.Therefore, in computer architecture, need possess interface (interface) and connect semiconductor wafer (semiconductor chip) or subsystem (sub-system) with different operating voltage.Owing to have the operating voltage of mixing, the I/O circuit at interface must possess the function of avoiding overtension (overstress) and preventing unsuitable drain current path (current leakage path) between the wafer.(electrostatic discharge, ESD) circuit also must satisfy identical interface state and restriction to electrostatic discharge protective.One of them restriction is that the I/O circuit that high low-voltage is held altogether must be able to bear the voltage that limits above grid oxic horizon (gate oxide) reliability.
Fig. 1 is No. the 5th, 932,918, the U.S. " ESD protection clamp for mixed voltageI/O stages using NMOS transistors " patents.As shown in Figure 1, this patent discloses the voltage that utilizes the nmos pass transistor 122,126 that piles up to limit I/O contact (Pad), and then the protection internal circuit.The implementation of this nmos pass transistor that piles up 122,126 on the CMOS processing procedure as shown in Figure 2, the N+ of the shared centre of drain electrode of the source electrode of transistor 122 and transistor 126 diffusion, and in this kind structure, the side two-carrier transistor of a parasitism is arranged.Fig. 3 is single NMOS element and the electric current and voltage collapse performance plot that piles up the NMOS element.As shown in Figure 3, the collapse district operating voltage of this nmos pass transistor that piles up 122,126 almost is that the twice of single nmos pass transistor is big.When identical static discharge current during by this transistor unit that piles up, piling up the heat energy (Power=I*V) that produces on the NMOS element at this can be that the twice of general single NMOS element is big.Therefore, making this pile up the NMOS element burns because of ESD easily.Promptly this ESD tolerance that piles up the NMOS element declines to a great extent.
For overcoming the shortcoming of above-mentioned prior art, the purpose of this invention is to provide a kind of electrostatic storage deflection (ESD) protection circuit, the output/input circuit that it utilizes the high low-voltage of matrix triggering technique to hold altogether carries out electrostatic discharge protective, thereby improves the electro-static discharge protective ability of the output/input circuit that high low-voltage holds altogether.
Electrostatic storage deflection (ESD) protection circuit of the present invention, the output/input circuit that utilizes the matrix triggering technique that high low-voltage is held altogether carries out electrostatic discharge protective.This electrostatic storage deflection (ESD) protection circuit comprises: the stacked type nmos pass transistor, have first nmos pass transistor and second nmos pass transistor that pile up, the drain electrode of this first nmos pass transistor is connected in the I/O contact, and the grid of this first nmos pass transistor is connected in one first operating voltage, the source electrode of this first nmos pass transistor is connected in the drain electrode of this bi-NMOS transistor, and the grid of this second nmos pass transistor is connected in an internal circuit, and the source electrode of this second nmos pass transistor is connected in one second operating voltage; The side two-carrier transistor of one parasitism, the transistorized collection utmost point of this side two-carrier is connected in the drain electrode of first nmos pass transistor, and emitter-base bandgap grading is connected in the source electrode of second nmos pass transistor; One trigger current produces circuit, first end is connected in the I/O contact, and second end is connected in second operating voltage, and the 3rd end is connected in the transistorized base stage of side two-carrier, when being higher than a set point, send a trigger current from the 3rd end so as to voltage at the I/O contact; And the substrate resistance of a parasitism, an end is connected in the transistorized base stage of two-carrier, and the other end is connected in second operating voltage, gives the two-carrier transistor so as to utilizing trigger current to produce a bias voltage.
The output/input circuit that the present invention adopts the matrix triggering technique that high low-voltage is held altogether carries out electrostatic discharge protective, the NMOS element of stack is difficult for because of static discharge burns, thereby improves the electro-static discharge protective ability of the output/input circuit that high low-voltage holds altogether greatly.
Be accompanying drawing of the present invention below:
Fig. 1 is the electrostatic storage deflection (ESD) protection circuit of prior art;
Fig. 2 is the profile of the electrostatic storage deflection (ESD) protection circuit of prior art;
Fig. 3 is the transistor drain of Fig. 1 and the graph of a relation of source voltage and drain current;
Fig. 4 is first embodiment of electrostatic storage deflection (ESD) protection circuit of the present invention;
Fig. 5 show the present invention be applied to mixed type voltage esd protection circuit have a profile that trigger current produces the stacked NMOS transistors structure of circuit;
Fig. 6 shows the number of diodes of SPICE simulation and the graph of a relation of trigger current;
Fig. 7 shows the transistorized width of PMOS of SPICE simulation and the graph of a relation of trigger current;
Fig. 8 is second embodiment of electrostatic storage deflection (ESD) protection circuit of the present invention;
Fig. 9 shows the kenel of 4 kinds of static discharges;
Figure 10 is for using the circuit of electrostatic storage deflection (ESD) protection circuit of the present invention.
Component symbol parameter declaration among the figure:
10 electrostatic storage deflection (ESD) protection circuit 11I/O contacts
12 internal circuits 13 promote the PMOS transistor
20 stacked NMOS transistors, 21 upside nmos pass transistors
22 downside nmos pass transistors, 30 side two-carrier transistors
40 trigger currents produce circuit 50 parasitic substrate resistance
Describe the present invention in detail below with reference to accompanying drawing:
Fig. 4 is first embodiment of electrostatic storage deflection (ESD) protection circuit of the present invention.As shown in the drawing, electrostatic storage deflection (ESD) protection circuit 10 of the present invention is to comprise a stack of nmos pass transistor 20, a side two-carrier transistor 30, a parasitic substrate resistance R sub and a trigger current to produce circuit 40.This nmos pass transistor that piles up 20 can be with the voltage embedding of I/O contact in the predeterminated voltage scope, and trigger current to produce circuit 40 be to be used for producing trigger current Itrig.When trigger current Itrig surpasses a critical electric current value, via the pressure drop that parasitic substrate resistance R sub is produced, trigger side two-carrier transistor 30 ahead of time, so as to getting rid of the electric current of static discharge, to promote the ESD pressure withstanding degree of this protective circuit.
This nmos pass transistor that piles up 20 comprises upside nmos pass transistor 21 and downside nmos pass transistor 22.The drain electrode of last side transistor 21 (drain) is connected to an I/O contact (pad) 11, and grid (gate) is connected to the first operating voltage Vdd.The drain electrode of following side transistor 22 is connected to the source electrode (source) of side transistor 21, and grid is connected to internal circuit 12, and source electrode is connected to the second operating voltage Vss, that is ground connection.Note that the source electrode of last side transistor 21 also forms shared diffusion zone (shared difffusion) with the drain electrode of following side transistor 22.And the grid system of following side transistor 22 is connected in internal circuit 12, but not is connected to the second operating voltage Vss.
The collection utmost point of two-carrier transistor 30 (collector electrode) is connected in the drain electrode of side transistor 21, that is is connected in I/O contact 11.And the emitter-base bandgap grading of two-carrier transistor 30 (emitter electrode) is connected in down the source electrode of side transistor 22, that is is connected in the second operating voltage Vss.Parasitic substrate resistance R sub is connected between the base stage (bas electrode) and the second operating voltage Vss of two-carrier transistor 30.Therefore, as trigger current Itrig during greater than a critical value during Ith, that is during greater than the base stage of two-carrier transistor 30-emitter junction forward bias voltage drop, this two-carrier transistor 30 can conductings, so as to being guided to second from I/O contact 11, static discharge current makes voltage Vss, that is ground connection.
Trigger current produces circuit 40 and is used for producing trigger current Itrig.As shown in Figure 4, trigger current produce circuit 40 comprise a tandem diode D1, D2 ..., Dm, a PMOS transistor 42, a nmos pass transistor 43 and a resistance R d.Tandem diode D1, D2 ..., the anode of Dm is connected to I/O contact 11, and negative terminal is connected to the first electric current utmost point (first current electrode) of PMOS transistor 42.The drain electrode of nmos pass transistor 43 is connected to the second electric current utmost point of PMOS transistor 42, and source electrode is connected to the second operating voltage Vss.PMOS transistor 42 is connected to the first operating voltage Vdd with the grid (gate electrode) of nmos pass transistor 43 through resistance R d.Trigger current Itrig promptly from I/O connect 11 through tandem diode D1, D2 ..., Dm, the 42 back outputs of PMOS transistor.The effect of nmos pass transistor 43 is to avoid under the operate as normal situation, big leakage current triggering two-carrier transistor 30 is arranged and make its conducting (turnon).Resistance R d can use the n+ diffusion resistance of the diode with parasitism (parasitic) p-sub/n+.The diode of this parasitism (parasitic) p-sub/n+ can be used as antenna diodes (antennadiode), so as to solving the antenna effect (antenna effect) when the manufacture process.
Under normal situation, the ESD circuit is the state that remains on not conducting, therefore can not influence the voltage quasi position of (interfere) I/O contact 11.When I/O contact 11 during as input buffer (inputbuffer), the Das Vorderradfahrwerkmit Vorderradantrieb of internal circuit 12 (not shown) can output logic 0 to the grid of side transistor 22 down, therefore not having leakage current flows through the nmos pass transistor 20 that piles up.Stride across tandem diode D1, D2 ..., the voltage Vstring of Dm can formula (1) expression:
Wherein, m is that number, the n of diode are that desirable factors and β are the beta gain of parasitic-PNP transistor.
As the voltage Vpad of I/O contact 11 during greater than Vstring+|Vtp|+Vdd, trigger current produces circuit 40 promptly can produce trigger current Itrig.This trigger current produce circuit 40 can according to the required leakage current under working temperature adjust tandem diode D1, D2 ..., the length of Dm, and the voltage of trigger current generation circuit 40 actions, to keep the state of ESD circuit not conducting under the operate as normal situation.
When the situation of ESD takes place, owing to the de-coupling electric capacity of the first operating voltage Vdd makes the grid of PMOS transistor 42 be similar to ground connection near the second operating voltage Vss.So when Vpad 〉=Vstring+|Vtp|, trigger current produces circuit 40 conductings, and electric current can flow through tandem diode D1, D2 ..., Dm and PMOS transistor 42 be to substrate (substrate).Therefore, a suitable parasitic substrate resistance R sub makes the pressure drop Vsub of this parasitic substrate resistance R sub greater than 0.6V, makes 30 conductings of two-carrier transistor.Fig. 5 shows that the present invention is applied to the profile that trigger current produces the stacked NMOS transistors structure of circuit that has of esd protection circuit that high low-voltage holds altogether.
Fig. 6 shows the number of diodes of SPICE simulation and the relation of trigger current Itrig, and wherein the voltage of I/O contact 11 is 10ns in the rise time of 0V to 8V, with simulation ESD situation (breakdown voltage of stacked NMOS transistors 20 is approximately near 10V).Can recognize the relation that the number of diode and trigger current Itrig are inversely proportional to from this figure.Fig. 7 shows the width of PMOS transistor 42 of SPICE simulation and the relation of trigger current Itrig, wherein the number of diode be 5 and the length of PMOS transistor 42 be 3 μ m.Can recognize the relation that the width of PMOS transistor 42 is directly proportional with trigger current Itrig from this figure.Can adjust the width of number of diodes and PMOS transistor 42 according to Fig. 6,7 SPICE analog result, so that under the ESD situation, before stacked NMOS transistors 20 is not collapsed as yet, there are enough electric current I trig to trigger parasitic side two-carrier transistor 30 early.
Fig. 8 shows second embodiment of electrostatic storage deflection (ESD) protection circuit of the present invention.As shown in the drawing, the structure of electrostatic storage deflection (ESD) protection circuit 10 ' is identical with the electrostatic storage deflection (ESD) protection circuit 10 of first embodiment, unique difference be tandem diode D1, D2 ..., the anode of Dm is connected in a n-well (n-well) that promotes the suspension joint (floating) of PMOS transistor 13, and this PMOS transistor 13 is the some of output buffer.Under the ESD situation, parasitic p+/n-well diode and trigger current generation circuit 40 that electric current flows through PMOS transistor 13 at first come quick conducting to be contained in the parasitic side two-carrier transistor 30 of stacked NMOS transistors 20 so as to producing trigger current Itrig, and the ESD electric current is got rid of (Shunt).The purpose of second embodiment provides an embedding system structure can not produce extra input capacitance to guarantee I/O contact 11.This structure is even more important for the analogy integrated circuit.
Fig. 9 shows the kenel of four kinds of static discharges.As shown in the drawing, owing under ESD test, can produce positive voltage or negative voltage with respect to the first operating voltage Vdd and the second operating voltage Vss for I/O contact 11, so have the kenel of four kinds of static discharges.Under these ESD kenels, ESD voltage can be with respect to the first operating voltage Vdd and the second operating voltage Vss and is poured into I/O contact 11, but other contact is a floating.So esd protection circuit must be with ESD current bypass (bypass) to the first operating voltage Vdd and the second operating voltage Vss.Below with reference to Figure 10 the working method of circuit of the present invention in the kenel of four kinds of static discharges is described respectively down:
1. produce the positive voltage input with respect to the second operating voltage Vss.Under this kenel, high input voltage can make trigger current produce the also esd protection circuit of conducting stacked NMOS transistors of circuit 40 actions, and with most ESD current bypass to the second operating voltage Vss.
2. produce the positive voltage input with respect to the first operating voltage Vdd.Under this kenel, high defeated A voltage can make trigger current produce the also esd protection circuit of conducting stacked NMOS transistors of circuit 40 actions, and with most ESD current bypass to the second operating voltage Vss.Simultaneously, increase, force parasitic diode Dw conducting because second operating voltage is made the voltage of Vss, and with ESD current bypass to the first operating voltage Vdd.And parasitic diode Dw is formed by P type substrate and n-well.
3. produce the negative voltage input with respect to the second operating voltage Vss.Under this kenel, high negative input voltage can make parasitic diode Dn conducting, and with ESD current bypass to the second operating voltage Vss.And parasitic diode Dn is formed by P type substrate and n+ zone.
4. produce the negative voltage input with respect to the first operating voltage Vdd.Under this kenel, high negative input voltage can make parasitic diode Dn conducting, and with the ESD electric current via parasitic diode Dn and Rail embedding system circuit bypass to the first operating voltage Vdd.
So electrostatic storage deflection (ESD) protection circuit of the present invention can effectively reach the effect of electrostatic discharge protective.
Though more than with embodiment the present invention is described, therefore do not limit scope of the present invention, only otherwise break away from main idea of the present invention, these those skilled in the art can carry out various distortion or change.
Claims (6)
1. electrostatic storage deflection (ESD) protection circuit, it is characterized in that: this electrostatic storage deflection (ESD) protection circuit comprises:
The stacked type nmos pass transistor, have first nmos pass transistor and second nmos pass transistor that pile up, the drain electrode of this first nmos pass transistor is connected in an I/O contact, and the grid of this first nmos pass transistor is connected in one first operating voltage, the source electrode of this first nmos pass transistor is connected in the drain electrode of this bi-NMOS transistor, and the grid of this second nmos pass transistor is connected in an internal circuit, and the source electrode of this second nmos pass transistor is connected in one second operating voltage;
One side two-carrier transistor, the transistorized collection utmost point of this side two-carrier is connected in the drain electrode of aforementioned first nmos pass transistor, and emitter-base bandgap grading is connected in the source electrode of second nmos pass transistor;
One trigger current produces circuit, and first end is connected in aforementioned I/O contact, and second end is connected in aforementioned second operating voltage, and the 3rd end is connected in the transistorized base stage of aforementioned side two-carrier;
One substrate resistance, an end are connected in the transistorized base stage of aforementioned two-carrier, and the other end is connected in aforementioned second operating voltage.
2. electrostatic storage deflection (ESD) protection circuit, it is characterized in that: this electrostatic storage deflection (ESD) protection circuit comprises:
The stacked type nmos pass transistor, have first nmos pass transistor and second nmos pass transistor that pile up, the drain electrode of this first nmos pass transistor is connected in an I/O contact, and the grid of this first nmos pass transistor is connected in one first operating voltage, the source electrode of this first nmos pass transistor is connected in the drain electrode of this bi-NMOS transistor, and the grid of this second nmos pass transistor is connected in an internal circuit, and the source electrode of this second nmos pass transistor is connected in one second operating voltage;
One side two-carrier transistor, the transistorized collection utmost point of this side two-carrier is connected in the drain electrode of aforementioned first nmos pass transistor, and emitter-base bandgap grading is connected in the source electrode of aforementioned second nmos pass transistor;
One trigger current produces circuit, and first end is connected in the n-well of the transistorized suspension joint of a lifting PMOS, and second end is connected in aforementioned second operating voltage, and the 3rd end is connected in the transistorized base stage of aforementioned side two-carrier;
One substrate resistance, an end are connected in the transistorized base stage of aforementioned two-carrier, and the other end is connected in aforementioned second operating voltage.
3. electrostatic storage deflection (ESD) protection circuit as claimed in claim 1 or 2 is characterized in that: wherein aforementioned trigger current produces circuit and also comprises:
One tandem diode, the anode of this tandem diode produce aforementioned first end of circuit for this trigger current;
One P transistor npn npn, the source electrode of this P transistor npn npn is connected in the negative terminal of aforementioned tandem diode;
One N transistor npn npn, the drain electrode of this N transistor npn npn are connected in the drain electrode of aforementioned P transistor npn npn and produce aforementioned the 3rd end of circuit as this trigger current, and the source electrode of this N transistor npn npn produces aforementioned second end of circuit as this trigger current;
The grid of wherein aforementioned P transistor npn npn and N transistor npn npn is connected to aforementioned first operating voltage via a resistance.
4. electrostatic storage deflection (ESD) protection circuit as claimed in claim 1 or 2 is characterized in that: it also comprises one and promotes PMOS, and drain electrode is connected in aforementioned I/O contact, and source electrode is connected in aforementioned first operating voltage, and grid is connected in aforementioned internal circuit.
5. electrostatic storage deflection (ESD) protection circuit as claimed in claim 1 or 2 is characterized in that: wherein aforesaid base plate resistance is dead resistance.
6. electrostatic storage deflection (ESD) protection circuit as claimed in claim 1 or 2 is characterized in that: wherein aforementioned side two-carrier transistor is parasitic two-carrier transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011160713A CN1180479C (en) | 2001-05-14 | 2001-05-14 | Electrostatic discharge protective circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011160713A CN1180479C (en) | 2001-05-14 | 2001-05-14 | Electrostatic discharge protective circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1385902A true CN1385902A (en) | 2002-12-18 |
| CN1180479C CN1180479C (en) | 2004-12-15 |
Family
ID=4662370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011160713A Expired - Lifetime CN1180479C (en) | 2001-05-14 | 2001-05-14 | Electrostatic discharge protective circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1180479C (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100339988C (en) * | 2004-02-26 | 2007-09-26 | 威盛电子股份有限公司 | Electrostatic discharge protective circuit of duplication structure |
| CN100372114C (en) * | 2003-11-07 | 2008-02-27 | 株式会社东芝 | Semiconductor device including a protection circuit |
| CN100382313C (en) * | 2005-12-07 | 2008-04-16 | 威盛电子股份有限公司 | Electrostatic discharge protective circuit and relevant techniques |
| US7440247B2 (en) | 2004-02-19 | 2008-10-21 | Via Technologies, Inc. | Gate coupling electrostatic discharge protection circuit with redundant structures |
| CN1929127B (en) * | 2005-09-05 | 2010-12-15 | 太极控股有限公司 | Electrostatic discharge protection circuit |
| CN101350348B (en) * | 2005-02-07 | 2012-02-08 | 三星电子株式会社 | Method of dissipating an electrostatic current |
| CN103078614A (en) * | 2012-12-21 | 2013-05-01 | 上海宏力半导体制造有限公司 | Voltage-clamping circuit |
| CN106292823A (en) * | 2016-08-31 | 2017-01-04 | 苏州纳芯微电子股份有限公司 | A kind of high-low pressure converts integrated circuit |
| CN112054815A (en) * | 2020-05-07 | 2020-12-08 | 珠海市杰理科技股份有限公司 | Wireless device, transceiving radio frequency circuit thereof and ESD protection circuit thereof |
-
2001
- 2001-05-14 CN CNB011160713A patent/CN1180479C/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100372114C (en) * | 2003-11-07 | 2008-02-27 | 株式会社东芝 | Semiconductor device including a protection circuit |
| US7440247B2 (en) | 2004-02-19 | 2008-10-21 | Via Technologies, Inc. | Gate coupling electrostatic discharge protection circuit with redundant structures |
| CN100339988C (en) * | 2004-02-26 | 2007-09-26 | 威盛电子股份有限公司 | Electrostatic discharge protective circuit of duplication structure |
| CN101350348B (en) * | 2005-02-07 | 2012-02-08 | 三星电子株式会社 | Method of dissipating an electrostatic current |
| CN1929127B (en) * | 2005-09-05 | 2010-12-15 | 太极控股有限公司 | Electrostatic discharge protection circuit |
| CN100382313C (en) * | 2005-12-07 | 2008-04-16 | 威盛电子股份有限公司 | Electrostatic discharge protective circuit and relevant techniques |
| CN103078614A (en) * | 2012-12-21 | 2013-05-01 | 上海宏力半导体制造有限公司 | Voltage-clamping circuit |
| CN103078614B (en) * | 2012-12-21 | 2017-08-25 | 上海华虹宏力半导体制造有限公司 | Voltage clamp circuit |
| CN106292823A (en) * | 2016-08-31 | 2017-01-04 | 苏州纳芯微电子股份有限公司 | A kind of high-low pressure converts integrated circuit |
| CN106292823B (en) * | 2016-08-31 | 2018-10-09 | 苏州纳芯微电子股份有限公司 | A kind of high-low pressure conversion integrated circuit |
| CN112054815A (en) * | 2020-05-07 | 2020-12-08 | 珠海市杰理科技股份有限公司 | Wireless device, transceiving radio frequency circuit thereof and ESD protection circuit thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1180479C (en) | 2004-12-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101039027B (en) | Improved electrostatic discharge protecting circuit | |
| US6671153B1 (en) | Low-leakage diode string for use in the power-rail ESD clamp circuits | |
| US9263430B2 (en) | Semiconductor ESD device and method of making same | |
| US6400542B1 (en) | ESD protection circuit for different power supplies | |
| TW473979B (en) | ESD protection circuit for mixed-voltage I/O by using stacked NMOS transistors with substrate triggering technique | |
| US6479872B1 (en) | Dynamic substrate-coupled electrostatic discharging protection circuit | |
| JP2003517215A (en) | Improved ESD diode structure | |
| CN1180479C (en) | Electrostatic discharge protective circuit | |
| KR20050079542A (en) | Device for protecting an electro static discharge and circuit for same | |
| CN1283003C (en) | Electrostatic discharge protection circuit | |
| TWI302031B (en) | Cascaded diode structure with deep n-well and method for making the same | |
| CN114388493A (en) | ESD protection circuit | |
| CN1742416A (en) | Electrostatic discharge circuit and method therefor | |
| Koo | Design of SCR-based ESD protection device for power clamp using deep-submicron CMOS technology | |
| US20040240130A1 (en) | Semiconductor device having protection device for protecting internal device | |
| CN100444377C (en) | Static discharge protection circuit and method for providing semiconductor circuit | |
| Salcedo et al. | Novel and robust silicon controlled rectifier (SCR) based devices for on-chip ESD protection | |
| CN1051171C (en) | Electrostatic protecting circuits for semiconductor device and structure thereof | |
| Ker et al. | Complementary-LVTSCR ESD protection scheme for submicron CMOS IC's | |
| CN115621318A (en) | GGNMOS transistor structure, ESD protection device and circuit | |
| CN100438018C (en) | Static discharge protective circuit and method for double carrier complementary metal oxide semiconductor | |
| JPS59224172A (en) | Breakdown preventing circuit in semiconductor circuit device | |
| CN109671702A (en) | Electro-static discharge protecting device | |
| CN113937099B (en) | High holding voltage ESD protection device | |
| CN100338769C (en) | Electrostatic discharge protector adapted for overhigh or overlow input voltage threshold |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: TAIJI HOLDING CO., LTD. Free format text: FORMER OWNER: XITONG SCIENCE AND TECHNOLOGY CO LTD Effective date: 20091211 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20091211 Address after: Delaware Patentee after: Silicon Integrated Systems Corporation Address before: Hsinchu Science Park, Taiwan Patentee before: Xitong Science & Technology Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20041215 |
|
| CX01 | Expiry of patent term |