CN1383987A

CN1383987A - Manufacture of ink jet head chip

Info

Publication number: CN1383987A
Application number: CN 01116965
Authority: CN
Inventors: 林富山; 周沁怡; 张英伦; 游正弘
Original assignee: Microjet Technology Co Ltd
Current assignee: Microjet Technology Co Ltd
Priority date: 2001-05-09
Filing date: 2001-05-09
Publication date: 2002-12-11
Anticipated expiration: 2021-05-09
Also published as: CN1168603C

Abstract

The present invention relates to the manufacture of ink jet head chip and is especially the manufacture of thermal ink jet print head chip. The manufacture process includes forming one heat barrier layer on silicon matrix, forming resistor layer, the first conducting layer, protecting layer, transition layer and the second conducting layer successively through yellow light etching to defind the required sizes. The structure may be in different form for different output device specification.

Description

Manufacture of ink jet head chip

The present invention relates to a kind of manufacture of ink jet head chip, refer to a kind of hot bubble type ink jet head (ThermalInkjet Printhead) manufacturing method of chip especially.

Printer has become the essential auxiliary device of computer, and that high-resolution, color output effect are good because of possessing, consumptive material is replaced is convenient, moderate and keep in repair advantages such as easy for ink-jet printer in information products, is the main flow of printer market always; The quality of printer prints quality, ink gun have accounted for very important factor, and most important element is exactly a chip in the ink gun, and the quality bills of materials quality of chip will determine the print quality of ink gun.

The object of the present invention is to provide a kind of manufacture of ink jet head chip, to obtain good chip manufacturing quality.

For achieving the above object, manufacture of ink jet head chip of the present invention is characterized in, said method comprising the steps of: (1) forms one deck thermal barrier coatings on silicon substrate, the material of described thermal barrier coatings is silica (SiO ₂); (2) on thermal barrier coatings, form the resistive layer and the first conductive layer two-layer film; Wherein, the material of described resistive layer is tantalum aluminium alloy (Ta-Al), and the material of described first conductive layer is aluminium copper (Al-Cu); (3) size of qualification first conductive layer; (4) size of qualification resistive layer; (5) form protective layer on the two-layer film of the resistive layer and first conductive layer, the material of described protective layer is silicon nitride (Si ₃N ₄) or carborundum (SiC); (6) limit via hole (Via Hole) and size thereof at protective layer; (7) form the following layer and second conductive layer on via hole, and limit its size, the material of described following layer is tantalum (Ta), and the material of described second conductive layer is a gold (Au).

The described thermal barrier coatings of (1) step is called dielectric layer again in above-mentioned manufacture of ink jet head chip, is to be equal to the character mode with thermal oxidation furnace, chemical vapor deposition (CVD) or other to form.

The formation of the described resistive layer of (2) step and the first conductive layer two-layer film in above-mentioned manufacture of ink jet head chip, be to be equal to the material that the character mode forms resistive layer continuously with sputter (Sputter) or other to can be alloy or the compound that contains tantalum (Ta), hafnium (Hf), vanadium (V), chromium (Cr), tungsten (W), molybdenum (Mo), strontium (Sr), yttrium (Y), barium metals such as (Ba), and polysilicon (Polysilicon) and silicide; The material of first conductive layer can be aluminium (Al), titanium (Ti), tungsten (W), silver (Ag), gold (Au), copper (Cu), tantalum (Ta) and alloy thereof, and polysilicon and silicide.

In above-mentioned manufacture of ink jet head chip (3) with the described resistive layer of (4) step and first conductive layer be that wherein, etching mode can be dry-etching or Wet-type etching with gold-tinted and etching mode qualification size.

The formation of the described protective layer of (5) step in above-mentioned manufacture of ink jet head chip is to be equal to the character mode with sputter, chemical vapor deposition or other to form.

The described via hole of (6) step is to limit size with gold-tinted and etching mode in above-mentioned manufacture of ink jet head chip, and wherein, etching mode can be dry-etching or Wet-type etching.

The formation of the described following layer of (7) step and second conductive layer in above-mentioned manufacture of ink jet head chip is to be equal to the character mode with sputter, chemical vapor deposition, plating or other to form.

The described following layer of (7) step and second conductive layer are to limit size with gold-tinted and etching mode in above-mentioned manufacture of ink jet head chip, and wherein, etching mode can be dry-etching or Wet-type etching.

Comprehensively above-mentioned; described manufacture of ink jet head chip; be with physical vapour deposition (PVD) (Physical Vapor Deposition) on silicon substrate; chemical vapour deposition (CVD) (Chemical Vapor Deposition); etching operations such as (Etching) forms thermal barrier coatings, resistive layer, first conductive layer, protective layer, following layer and second conductive layer in regular turn, to finish the manufacturing of a basic chip of ink-jet head.

Because the thermal barrier coatings material adopts the bigger SiO of dielectric constant (Dielectric Constant) ₂, recruit the required electric field of electricity collapse (Breakdown) also very high, it is easy to make by high-temperature oxydation on silicon substrate, therefore has quite good compactness and thermal insulation, insulation characterisitic; Because forming the resistive layer and the first conductive layer two-layer film continuously therefore can simplify working process; Because of the process of continuous film forming is at condition of high vacuum degree (＜10 ^-7Holder) carry out in the environment, resistive layer has preferable engaging (Junction) with interface between first conductive layer, can eliminate the interface oxide, can increase considerably the life-span of ink gun; Because protective layer adopts the high Si of hardness ₃N ₄, fine to the anti-blocking ability of alkali metal ion, and be difficult for being permeated by aqueous vapor (Moisture), anti-crack ability is good, thereby can protect chip to avoid suffering permanent mechanicalness to injure; Because following layer is an electric conductivity good metal, described following layer in via hole, be connected with first conductive layer can with first conductive layer electrically be passed to second conductive layer, for the carrying out of follow-up packaging process; If following layer itself has high-melting-point and favorable mechanical character, also double as is the usefulness of protective layer simultaneously

For clearer understanding purpose of the present invention, characteristics and advantage, preferred embodiment of the present invention is elaborated below in conjunction with accompanying drawing.

Fig. 1 is step (1) schematic diagram of manufacture of ink jet head chip preferred embodiment of the present invention;

Fig. 2 is step (2) schematic diagram of manufacture of ink jet head chip preferred embodiment of the present invention;

Fig. 3 is step (3) schematic diagram of manufacture of ink jet head chip preferred embodiment of the present invention;

Fig. 4 is step (4) schematic diagram of manufacture of ink jet head chip preferred embodiment of the present invention;

Fig. 5 is step (5) schematic diagram of manufacture of ink jet head chip preferred embodiment of the present invention;

Fig. 6 is step (6) schematic diagram of manufacture of ink jet head chip preferred embodiment of the present invention;

Fig. 7-A to Fig. 7-C is step (7) schematic diagram of manufacture of ink jet head chip preferred embodiment of the present invention.

See also Fig. 1, manufacture of ink jet head chip of the present invention, its step (1) is to be equal to the character mode with hot gasification burner, chemical meteorology deposition (CVD) or other to form one deck thermal barrier coatings 12 on silicon substrate 10, the material of described thermal barrier coatings 12 is silica (SiO ₂): Figure 2 shows that step (2) is equal to the character mode with sputter or other and forms resistive layer 14 and first conductive layer, 16 two-layer films continuously on thermal barrier coatings 12; Wherein, the material of described resistive layer 14 can be tantalum aluminium alloy (Ta-Al), and the material of described first conductive layer can be (Al-Cu); Figure 3 shows that step (3) limits first conductive layer, 16 sizes with gold-tinted and etching mode, because of first conductive layer, 16 films are positioned at the upper strata, so after limiting the size of good described first conductive layer 16 earlier, the size that just can carry out resistive layer 14 limits; Figure 4 shows that step (4) limits the size of resistive layer 14 with gold-tinted and etching mode; Figure 5 shows that step (5) is equal to the character mode with sputter, chemical vapor deposition or other and forms protective layer 18 on the two-layer film of the resistive layer 14 and first conductive layer 16, the material of described protective layer 18 can be silicon nitride (Si ₃N ₄) or carborundum (SiC); Figure 6 shows that step (6) limits via hole 20 and size thereof with gold-tinted and etching mode on protective layer 18, the effect of described via hole 20 is that first conductive layer 16 is engaged with second conductive layer 24 with following layer 22 on the via hole 20, forms electric conducting state; Fig. 7-A to Fig. 7-C is depicted as step (7) and is equal to the character mode with sputter, chemical vapor deposition or other forms the following layer 22 and second conductive layer 24 on via hole 20, and with gold-tinted and etching mode qualification size, the material of described following layer 22 can be tantalum (Ta), and the material of described second conductive layer 24 can be gold (Au).Like this, promptly finish the essential structure of chip of ink-jet head, this structure can be done further manufacturing procedure according to the needs of output device specification, forms the ink supply runner as sandblast, last thick film, and exposure, the processing such as making the ink cabin of developing forms a complete chip of ink-jet head.

Claims

1. a manufacture of ink jet head chip is characterized in that, said method comprising the steps of:

(1) form one deck thermal barrier coatings on silicon substrate, the material of described thermal barrier coatings is silica (SiO ₂);

(2) on thermal barrier coatings, form the resistive layer and the first conductive layer two-layer film; Wherein, the material of described resistive layer is tantalum aluminium alloy (Ta-Al), and the material of described first conductive layer is aluminium copper (Al-Cu);

(3) size of qualification first conductive layer;

(4) size of qualification resistive layer;

(5) form protective layer on the two-layer film of the resistive layer and first conductive layer, the material of described protective layer is silicon nitride (Si ₃N ₄) or carborundum (SiC);

(6) limit via hole (Via Hole) and size thereof at protective layer;

(7) form the following layer and second conductive layer on via hole, and limit its size, the material of described following layer is tantalum (Ta), and the material of described second conductive layer is a gold (Au).

2. manufacture of ink jet head chip as claimed in claim 1 is characterized in that, the thermal barrier coatings described in the step (1) is to be equal to the character mode with thermal oxidation furnace, chemical vapor deposition (CVD) or other to form.

3. manufacture of ink jet head chip as claimed in claim 1 is characterized in that, the resistive layer described in the step (2) and the first conductive layer two-layer film are to be equal to the character mode with sputter or other to form continuously.

4. manufacture of ink jet head chip as claimed in claim 1, it is characterized in that, the material of the resistive layer described in the step (2) is alloy or the compound that contains hafnium (Hf), vanadium (V), chromium (Cr), tungsten (W), molybdenum (Mo), strontium (Sr), yttrium (Y), barium metals such as (Ba), and polysilicon (Polysilicon) and silicide.

5. manufacture of ink jet head chip as claimed in claim 1 is characterized in that, the material of first conductive layer described in the step (2) is titanium (Ti), tungsten (W), silver (Ag), gold (Au), tantalum (Ta) and alloy thereof, and polysilicon and silicide.

6. manufacture of ink jet head chip as claimed in claim 1 is characterized in that, first conductive layer described in the step (3) is to limit size with gold-tinted and etching mode, and wherein, etching mode can be dry-etching or Wet-type etching.

7. manufacture of ink jet head chip as claimed in claim 1 is characterized in that, the resistive layer described in the step (4) is to limit size with gold-tinted and etching mode, and wherein, etching mode can be dry-etching or Wet-type etching.

8. manufacture of ink jet head chip as claimed in claim 1 is characterized in that, the protective layer described in the step (5) is to be equal to the character mode with sputter, chemical vapor deposition or other to form.

9. manufacture of ink jet head chip as claimed in claim 1 is characterized in that, the via hole described in the step (6) is to limit size with gold-tinted and etching mode, and wherein, etching mode can be dry-etching or Wet-type etching.

10. manufacture of ink jet head chip as claimed in claim 1 is characterized in that, the following layer described in the step (7) and second conductive layer are to limit size with gold-tinted and etching mode, and wherein, etching mode can be dry-etching or Wet-type etching.