CN1378248A - Dry plasma etching system and method for III-V family compounds - Google Patents
Dry plasma etching system and method for III-V family compounds Download PDFInfo
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- CN1378248A CN1378248A CN 02115200 CN02115200A CN1378248A CN 1378248 A CN1378248 A CN 1378248A CN 02115200 CN02115200 CN 02115200 CN 02115200 A CN02115200 A CN 02115200A CN 1378248 A CN1378248 A CN 1378248A
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Abstract
The present invention belongs to semiconductor producing equipment and technology. The dry etching system consists of measuring unit, RF bias power source, substrate stage, ICP coupling antenna, magnetically controlling coil, RF power source, reactor, pedestal, gas distributor and vacuum unit connected together. The dry etching process includes: producing plasma; bombarding the surface of substrate with plasma guided and bounded by externally applied RF bias power or magnetic field; composing the etching gas mixture; and etching. The said system and process can produce fine pattern and has no effect on the semiconductor performance and service life.
Description
(1) technical field:
The present invention is dry etching system and the lithographic method of compact inductively coupled plasma (ICP) to the III-V compounds of group, belongs to semiconductor production equipment and technology, the particularly gas componant of etching III-V compounds of group, distribution and technical process.
(2) technical background:
Along with the raising of integrated circuit integrated level, the figure of integrated circuit is more and more meticulousr.Can the III-V compound semiconductor all be widely used at microelectronics, optoelectronic areas owing to have good photoelectric characteristic, then become the bottleneck that restriction III-V compound semiconductor is used by meticulous etching III-V compounds of group.Etching III-V compounds of group is still continued to use wet chemical etchings such as acid, alkali mostly at present, this method is because the isotropism effect, be difficult to the following fine pattern of etching 3 μ m, and chemical composition such as easy residual soda acid on the figure of etching, shortened the useful life of III-V compound semiconductor; Another kind method is to use the ion bombardment ise, and it is to bombard substrate with the inert gas ion with certain kinetic energy, and it exists III-V compounds of group non-selectivity, and etch rate is low and the shortcoming of deposit phenomenon easily takes place.Therefore, in production process of semiconductor, be badly in need of in fact very much a kind of the III-V compounds of group being had good selectivity, high etch rate, low damage can be made the lithographic method of submicron order fine pattern.
(3) summary of the invention:
Purpose of the present invention is exactly the low precision that is produced when overcoming existing Wet technique etching III-V compounds of group, etch rate is low, poor selectivity, damage big shortcoming, solve and be badly in need of wanting a kind of energy two-forty, low damage, high accuracy and have the good optionally problem of lithographic method, research, invent a kind of can overcome and solve above-mentioned shortcoming and problem can make fine pattern, do not influence semiconducting behavior, device property and useful life, the precision height, the etch rate height, selectivity is good, damage little compact inductively coupled plasma to the dry etching system of III-V compounds of group and use specific gas, the lithographic method of gas mixing ratio.The present invention realizes by following structure technology scheme and lithographic method: the structural representation of compact induction coupling low temperature plasma dry etching system as shown in Figure 1, its etch process flow figure is as shown in Figure 2.This dry etching system is by measurement mechanism 1, radio frequency bias power source 2, chip bench 3, ICP coupled antenna 5, magnetic control coil 6, RF power supply 7, reative cell 8, base 9, air distributing device 10, vacuum plant 11 formation that is linked and packed jointly, its mutual alignment and annexation are: the probe of measurement mechanism 1 is inserted in the reative cell 8, reative cell 8 is positioned in the base 9, ICP coupled antenna 5 is enclosed within on the reative cell 8, magnetic control coil 6 is positioned over the outside of ICP coupled antenna 5, reative cell 8 is connected with chip bench 3, ICP coupled antenna 5 is connected with RF power supply 7 by cable, chip bench 3 is connected with bias power source 2 by cable, reative cell 8 is communicated with air distributing device 10, and reative cell 8 is communicated with vacuum plant 11.
Dry etching method of the present invention is realized by following method and technology scheme: (1) produces the equally distributed ICP plasma of high density in the column type reative cell 8 of compactness; (2) utilization adds radio frequency bias power 100～900W, produces magnetic field 1 * 10
-4The means article on plasma body of～1T (tesla) retrains, and the directing plasma bombardment waits to carve substrate 4 surfaces; (3) its etching reaction gas formulation: etching gas is chlorine Cl
2, hydrogen H
2, argon Ar, nitrogen N
2, methane CH
4, boron chloride BCl
3, carbon tetrachloride CCl
4, phosphorus trichloride PCl
3, fluorine Lyons 12-CCl
2F
2, fluorine Lyons 22-CHClF
2In the mist of one or more gases; Concrete will depend on that with which kind of gas and the distribution that how to realize mist the material of the III-V compounds of group indium antimonide InSb, the indium aluminium nitrogen InAIN that are etched, InGaAsP InGaAsP, indium nitride InN reaches the requirement to final etching product quality, the restriction of established technology condition; (4) etching technics Step By Condition: 1. substrate 4 to be etched is put into reative cell 8, reative cell 8 is vacuumized; 2. work as reative cell base vacuum degree and reach 10
-2～10
-3During holder (Torr), feed etching reaction gas; 3. the flow of controlling etching reaction gas is the proportioning of 2～6 ml/min and 0.1～0.9, continues to vacuumize; 4. work as the stable gas pressure of reative cell 8 10
-2～10
-3Holder adds power source and bias voltage, and the input power of regulating power source is that 100～800W and RF bias power source are that the size of 100～900W begins etching to produce plasma; 5. after reaching the etching effect of expection, stop input power and bias power source, turn off the gas that enters reative cell 8, close vacuum plant 11, finish etching; 6. from reative cell 8, take out chip, measure the etching result; Wherein, optimum process condition is: at reative cell air pressure is 2～6 * 10
-2Holder, gas flow is 2～4 ml/min, and RF power is 200～400W, and the RF bias power is that etching speed reaches 100～700nm/min under the condition of 100～300W.
Etching principle of the present invention is as follows: the radio frequency power supply has gaseous dissociation the becoming in the reative cell 8 by the coupling of induction antenna ion and some active groups of extensive chemical activity, these active particles are bombardment substrate surface to be carved under the constraint in bias power source and magnetic field and guiding, wait to carve material generation Surface Physical Chemistry reaction with on-chip, the product of reaction is a volatile substances, taken away by vacuum plant 11, thereby reach the purpose of etching.
The present invention compared with prior art has following advantage and beneficial effect: (1) responds to coupling low temperature plasma (ICP) etching III-V compounds of group with compactness, overcome wet chemical etching isotropism, be difficult for making fine pattern, thereby and easily on the etching sample residual corrosive liquid influence the shortcoming in semiconducting behavior and useful life, it is the good and controllable etching of anisotropy, can make the fine pattern of submicron order, and plasma etching to the damage of III-V compounds of group much smaller than the wet chemical etching, thereby effectively guaranteed semi-conductive performance and useful life; (2) compare with the ion bombardment ise, it has higher etch rate, different III-V compounds of group there is high selectivity, and be difficult for taking place the advantage of deposit phenomenon again, almost completely overcome the shortcoming of ion bombardment ise, can improve the production efficiency of III-V compound semiconductor greatly, have important economic value; (3) native system compact conformation, the efficient height, with low cost.
(4) description of drawings:
Below Figure of description is further specified as follows: Fig. 1 is compact induction coupling low temperature plasma (ICP) dry etching system configuration schematic diagram, and Fig. 2 is the process chart of ICP dry etching.Among the figure: 1 for measurement mechanism, 2 for radio frequency bias power source, 3 for chip bench, 4 for substrate to be carved, 5 be the ICP coupled antenna, 6 for the magnetic control coil, 7 for the radio frequency power supply, 8 for reative cell, 9 be vacuum plant for base, 10 is air distributing device, 11.
(5) embodiment:
As shown in Figure 1, the probe of measurement mechanism 1 is inserted in the reative cell 8 by the circular hole on the chip bench 3, be enclosed within O type rubber ring at the circular hole place and reach sealing on the probe, reative cell 8 is vertically placed in the circular groove of base 9, ICP coupled antenna 5 is enclosed within on the reative cell 8, magnetic control coil 6 is positioned over the outside of ICP coupled antenna 5, reative cell 8 is connected with chip bench 3 by the circular groove on the chip bench 3, the junction seals with silicagel pad, ICP coupled antenna 5 is connected with RF power supply 7 by cable, chip bench 3 is connected with bias power source 2 by cable, reative cell 8 is connected by copper pipe or pvc pipe and air distributing device 10, and reative cell 8 is connected by vacuum rubber pipe and vacuum plant 11.
The inventor is through long term studies, design and test, think and realize that optimal way of the present invention can be as follows: (1) is by shown in Figure 1, design, processing and manufacturing or buy each parts or the device of this etching system: for example: loam cake and chip bench 3 can select for use stainless steel to make material, employing South China Normal University millwork equipment in the school forms with the machining process processing, its edge is carved with circular groove and embedded white silica gel is used for sealed silica envelope, there is a circular port in loam cake central authorities, are used to measure plasma parameter so that insert the measuring probe of measurement mechanism 1; The loam cake circular is equilateral triangle three anchor clamps that distribute and is used for fixing and waits to carve substrate 4; Base 9 can be selected stainless steel material for use equally, and employing South China Normal University millwork equipment in the school forms with the machining process processing, and base 9 shapes and loam cake basically identical, central circular hole are the aspirating hole of vacuum plant 11, and both sides are the etching gas inlet; Be provided with the hole in the middle of loam cake and the base, be used for logical cooling water, vertically place entire reaction chamber 8, waits to carve substrate 4 and be inverted in loam cake; Reative cell 8 can select for use South China Normal University in the school two of plant produced polish and the cylindrical quartz pipe that burns mouthful as reative cell 8, the internal diameter of quartz ampoule can be 70～300mm, external diameter can be 76～306mm, height can be three kinds of specifications of 20～50mm; Magnetic control coil 6 and ICP coupled antenna 5 can own coilings, wherein compact induction coupling (ICP) antenna can be 2～5 circles, its internal diameter can be 2～5mm, external diameter can be the copper pipe of 3～6mm, the centre is used for logical cooling water, the plasma distribution form that is produced is for the closeest near chip bench 3, and 9 evenly reduce gradually from substrate 4 to base; The native system compact conformation is easy to produce high-density plasma, thereby has improved etch rate; Measurement mechanism 1 can be chosen the South China Normal University TZ-100 or the TZ-200 type device of plant produced in the school, RF power supply 7 can adopt the radio-frequency power supply of any a power-adjustable 0～1000W, and rf bias power source 2 can adopt the DC power supply of any a adjustable extent at 0～1000W; (2) design, processing and manufacturing and chosen each parts and device after, just can connection be installed and just can realize this dry method etching system preferably by each the parts mutual alignment of described etching system of top specification and annexation; (3) inventor has a lot of successful lithographic method embodiment through long term studies, test, only enumerates the embodiment of 14 successes below:
Embodiment 1: substrate 4-InSb to be etched (thickness 15 μ m) is put into reative cell 8, reative cell 8 is vacuumized, when reative cell 8 base vacuum degree reach 1.5 * 10
-2During holder, feed etching reaction gas CCl
2F
2Control flow rate of reactive gas 2 ml/min continue to vacuumize; When reative cell 8 stable gas pressure 5 * 10
-2During holder, add power source and bias power, and the input power of regulating power source is that 100W and RF are biased to 100W, produces plasma, the beginning etching; After the etching 30 minutes, stop power output and bias power, turn off the gas that enters reative cell 8, close vacuum plant 11, finish etching; Under the observation of ESEM, finding has good anisotropy, and the sample surfaces pattern is smooth, and etch rate reaches 200nm/min.
Embodiment 2: the etching condition among the embodiment 1 is become: reaction gas flow is 4 ml/min, and RF power is 400W, and RF is biased to 300W, and behind the feeding reacting gas, the reative cell stable gas pressure is 2 * 10
-2Holder, other detailed processes are with embodiment 1, and then etch period shortens to 10 minutes, and etch rate reaches 600nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
Embodiment 3: the etching condition among the embodiment 1 is become: reaction gas flow is 6 ml/min, and RF power is 800W, and RF is biased to 900W, and behind the feeding reacting gas, the reative cell stable gas pressure is 3 * 10
-2Holder, other detailed processes are with embodiment 1, and then etch period shortens to 5 minutes, and etch rate reaches 1200nm/min, but the out-of-flatness of sample surfaces pattern has more serious erosion phenomenon excessively.
Embodiment 4: the etching sample among the embodiment 1 is become InAIN, and etching gas is used Cl instead
2With the mist of Ar, reaction gas flow is 2 ml/min, Cl
2The percentage that is occupied is 0.1, and other detailed processes are with embodiment 1, and then etch rate reaches 100nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
Embodiment 5: the etching sample among the embodiment 1 is become InAIN, and etching gas is used Cl instead
2With the mist of Ar, reaction gas flow is 4 ml/min, Cl
2The percentage that is occupied is 0.4, and RF power is 400W, and RF is biased to 300W, feeds reacting gas afterreaction chamber stable gas pressure 2 * 10
-2Holder, other detailed processes are with embodiment 1, and then etch rate reaches 200nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
Embodiment 6: the etching sample among the embodiment 1 is become InAIN, and etching gas is used Cl instead
2With the mist of Ar, reaction gas flow is 6 ml/min, Cl
2The percentage that is occupied is 0.9, and RF power is 800W, and RF is biased to 900W, feeds reacting gas afterreaction chamber stable gas pressure 3 * 10
-1Holder, other detailed processes are with embodiment 1, and then etch rate reaches 300nm/min, but the out-of-flatness of sample surfaces pattern has more serious erosion phenomenon excessively.
Embodiment 7: the etching sample among the embodiment 1 is become InGaAsP, and etching gas is used H instead
2And CH
4Mist, reaction gas flow is 2 ml/min, CH
2The percentage that is occupied is 0.1, and other detailed processes are with embodiment 1, and then etch rate reaches 100nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
Embodiment 8: the etching sample among the embodiment 1 is become InGaAsP, and etching gas is used H instead
2And CH
4Mist, reaction gas flow is 4 ml/min, CH
4The percentage that is occupied is 0.4, and RF power is 400W, and RF is biased to 300W, feeds reacting gas afterreaction chamber stable gas pressure 2 * 10
-2Holder, other detailed processes are with embodiment 1, and then etch rate reaches 150nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
Embodiment 9: the etching sample among the embodiment 1 is become InGaAsP, and etching gas is used H instead
2And CH
4Mist, reaction gas flow is 6 ml/min, CH
4The percentage that is occupied is 0.9, and RF power is 800W, and RF is biased to 900W, feeds reacting gas afterreaction chamber stable gas pressure 3 * 10
-1Holder, other detailed processes are with embodiment 1, and then etch rate reaches 200nm/min, but the out-of-flatness of sample surfaces pattern has more serious erosion phenomenon excessively.
Embodiment 10: the etching sample among the embodiment 1 is become InN, and etching gas is used BCl instead
3With the mist of Ar, reaction gas flow is 2 ml/min, BCl
3The percentage that is occupied is 0.2, and other detailed processes are with embodiment 1, and then etch rate reaches 220nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
Embodiment 11: the etching sample among the embodiment 1 is become InAIN, and etching gas is used Cl instead
2And N
2Mist, reaction gas flow is 4 ml/min, Cl
2The percentage that is occupied is 0.7, and RF power is 400W, and RF is biased to 300W, feeds reacting gas afterreaction chamber stable gas pressure 2 * 10
-2Holder, other detailed processes are with embodiment 1, and then etch rate reaches 150nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
Embodiment 12: the etching sample is selected InSb for use, and etching gas is used CCl instead
4, reaction gas flow is 4 ml/min, and RF power is 400W, and RF is biased to 300W, and adds magnetic field 10
-4Holder feeds reacting gas afterreaction chamber stable gas pressure 2 * 10
-2Holder, other detailed processes are with embodiment 1, and then etch rate reaches 700nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
Embodiment 13: the etching sample is selected InSb for use, and etching gas is used PCl instead
3, reaction gas flow is 4 ml/min, and RF power is 400W, and RF is biased to 300W, and adds magnetic field 0.05T, feeds reacting gas afterreaction chamber stable gas pressure 2 * 10
-2Holder, other detailed processes are with embodiment 1, and then etch rate reaches 650nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
Embodiment 14: the etching sample is selected InSb for use, and etching gas is used CHClF instead
2, reaction gas flow is 4 ml/min, and RF power is 400W, and RF is biased to 300W, and adds magnetic field 1T, feeds reacting gas afterreaction chamber stable gas pressure 2 * 10
-2Holder, other detailed processes are with embodiment 1, and then etch rate reaches 500nm/min, and the sample surfaces pattern is smooth, and good anisotropy is arranged.
As seen from the above embodiment, the present invention has good etching effect to the III-V compounds of group, at etching condition is: reaction gas flow is 2～4 ml/min, and RF power is 200～400W, RF is biased to 100～300W, feeds reacting gas afterreaction chamber stable gas pressure 2～6 * 10
-2Holder can reach best etching effect.
Claims (4)
1, a kind of compact coupling low temperature plasma dry etching system that responds to, it is characterized in that: it is by measurement mechanism (1), radio frequency bias power source (2), chip bench (3), ICP coupled antenna (5), magnetic control coil (6), RF power supply (7), reative cell (8), base (9), air distributing device (10), vacuum plant (11) formation that is linked and packed jointly, its mutual alignment and annexation are: the probe of measurement mechanism (1) is inserted in the reative cell (8), reative cell (8) is positioned in the base (9), ICP coupled antenna (5) is enclosed within on the reative cell (8), magnetic control coil (6) is positioned over the outside of ICP coupled antenna (5), reative cell (8) is connected with chip bench (3), ICP coupled antenna (5) is connected with RF power supply (7) by cable, chip bench (3) is connected with bias power source (2) by cable, reative cell (8) is communicated with air distributing device (10), and reative cell (8) is communicated with vacuum plant (11).
2, a kind of with the described compact dry etching method of responding to coupling low temperature plasma dry etching system of claim 1, it is characterized in that, it comprises following processing step and condition: 1. substrate to be etched (4) is put into reative cell (8), reative cell (8) is vacuumized; 2. work as reative cell (8) base vacuum degree and reach 10
-2～10
-3During holder, feed reacting gas; 3. the flow of controlling etching reaction gas is the proportioning of 2～6 ml/min and 0.1～0.9, continues to vacuumize; 4. work as the stable gas pressure of reative cell (8) 10
-2～10
-3Holder adds power source and bias voltage, and the input power of regulating power source is that 100～800W and RF bias power source are that the size of 100～900W is to produce plasma, the beginning etching; 5. after reaching the etching effect of expection, stop input power and bias power, turn off the gas that enters reative cell (8), close vacuum plant (11), finish etching; 6. from reative cell (8), take out chip.
3, by the described a kind of compact dry etching method of responding to coupling low temperature plasma dry etching system of claim 2, it is characterized in that etching reaction gas is chlorine Cl
2, hydrogen H
2, argon Ar, nitrogen N
2, methane CH
4, boron chloride BCl
3, carbon tetrachloride CCl
4, phosphorus trichloride PCl
3, fluorine Lyons 12-CCl
2F
2, fluorine Lyons 22-CHClF
2In the mist of one or more gases.
By the dry etching method of the described a kind of compact induction coupling low temperature plasma dry etching of claim 2 system, it is characterized in that 4, described optimum process condition is for being 2～6 * 10 at reative cell air pressure
-2Holder, gas flow is 2～4 ml/min, and RF power is 200～400W, and the RF bias power is that etching speed reaches 100～700nm/min under the condition of 100～300W.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021152004A CN1169198C (en) | 2002-05-13 | 2002-05-13 | Dry plasma etching system and method for III-V family compounds |
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|---|---|---|---|
| CNB021152004A CN1169198C (en) | 2002-05-13 | 2002-05-13 | Dry plasma etching system and method for III-V family compounds |
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| CN100334694C (en) * | 2005-09-23 | 2007-08-29 | 中国科学院上海技术物理研究所 | Reaction ion etching equipment and method for mercury-cadmium-tellurium focal plane device micro mesa array |
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| CN100468519C (en) * | 2003-06-23 | 2009-03-11 | 日立环球储存科技荷兰有限公司 | Magnetic head coil system and damascene/reactive ion etching method for manufacturing the same |
| CN100334694C (en) * | 2005-09-23 | 2007-08-29 | 中国科学院上海技术物理研究所 | Reaction ion etching equipment and method for mercury-cadmium-tellurium focal plane device micro mesa array |
| CN101510525B (en) * | 2008-02-14 | 2011-11-09 | 台湾积体电路制造股份有限公司 | Method of formation for integrated circuit structure |
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| WO2011116496A1 (en) * | 2010-03-24 | 2011-09-29 | 中国地质大学（北京） | Radio frequency inductively coupled plasma generator confined using magnetic field produced by field coil with soft magnetic material shell |
| CN104885575A (en) * | 2012-12-28 | 2015-09-02 | 威特尔有限公司 | Plasma apparatus and substrate processing apparatus |
| CN104253017A (en) * | 2013-06-27 | 2014-12-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| CN108346554A (en) * | 2018-04-24 | 2018-07-31 | 西南林业大学 | A kind of plasma etching and depositing device and method |
| EP3965139A1 (en) | 2020-09-03 | 2022-03-09 | Jozef Stefan Institute | Apparatus, system and method for sustaining inductively coupled plasma |
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