CN1378102A - Method for reducing optical proximity effect - Google Patents
Method for reducing optical proximity effect Download PDFInfo
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- CN1378102A CN1378102A CN 01110413 CN01110413A CN1378102A CN 1378102 A CN1378102 A CN 1378102A CN 01110413 CN01110413 CN 01110413 CN 01110413 A CN01110413 A CN 01110413A CN 1378102 A CN1378102 A CN 1378102A
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- light shield
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- photoresistance
- pattern
- light
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Abstract
The present invention relates to a kind of correcting optical proximity effect. After one mother optical mask is cut into several optical submasks with different density, aperture of diaphragm, exposure energy and other conditions are determined based on the ideal critical sizes of different optical submasks and the optical submasks are used to exposure the photoresist layer so as to transfer the mask pattern onto the photoresist layer. The said method can overcome proximity effect and has no limit to the line width of the reduced devices.
Description
The present invention relates to a kind of optical correction method, particularly relate to and a kind ofly can improve that (optical proximity effect OPE) causes a kind of optical correction method of line pattern problem of dtmf distortion DTMF because of optical proximity effect.
The design of SIC (semiconductor integrated circuit) and manufacturing technology, significantly progress is arranged in recent years, the size of assembly improves constantly along with product chips density and continues to dwindle, in order to satisfy the demand of downsizing, even optical lithography has adopted i-line deep UV (ultraviolet light) (deep UV, DUV) optical system of scope; And when the design live width (design rule) of circuit unit levels off to the wavelength of light source that exposure bench uses, optical proximity effect just manifests gradually, not only cause the line pattern distortion of transferring on the wafer, more therefore, consume most critical dimension permission (criticaldimension tolerance), make the difficulty in process degree increase.
The so-called optical proximity effect, be meant when light etching process because of light source after the irradiation mask pattern, effect such as reflection, refraction or diffraction and that exposure dose is distributed is uneven causes the distortion of the back line pattern that develops.Please referring to Fig. 1, show a mask pattern with behind the etching program that generally exposes the figure that is transferred on the photoresistance to be manifested; As shown in the figure, because the influence of scattered light makes line pattern 10 ends also be exposed, the photoresistance pattern 12 after therefore developing can't coincide with the line pattern 10 on the light shield, and influences the character between circuit unit.
Generally speaking, the remedial measures of taking for proximity effect has at least the some can be by characteristic pattern (feature) is compensated (mask bias) towards the opposite direction correction of expection distortion.This promptly, the circuit that might become too narrow can be designed to width bigger than its reality or the like in advance.As shown in Figure 2, above-mentioned mask pattern 20 ends are added a tup line (hammerhead) 24,, therefore can compensate the consume that scattered light causes because the area of mask pattern 20 increases, thereby avoid the design transfer distortion, so can form the photoresistance pattern 22 that pre-interim desire forms.A data that is applicable to the mask pattern of light etching process stores into a computer data file, and also can be stored in the there at the correction data that proximity effect is done, and directly in light shield manufacture, does suitable correction during the pattern read-write.
In addition, by adjusting optic parameters such as stop opening (numerical aperture), light source density (coherence), exposure, or the correlative value of conversion photoresistance, all be beneficial to photoresistance its figure after exposing and reach critical dimension (critical dimension, CD) ideal range is to lower the influence of optical proximity effect.
Yet, growing along with semiconductor industry, the live width of assembly (line width) also heals along with the rising of integration to become to dwindling, this to aforesaid optical proximity effect compensation method not only be one greatly the limitation, there is certain limit in system because of reciprocal mask pattern correction, is not that figure under all live widths all can carry out the reverse compensation of light shield; Therefore, the integration of assembly is not probably significantly stagnated because of the design transfer effect of light shield, causes the development of semiconductor industry to arrive a limit.
In addition, because therefore the lane assignment compactness extent difference on the single silicon is difficult to utilize optic identical parameters adjustment and reaches an ideal value in the fine and close critical dimension (CD) with estranged zone of circuit.
In order to overcome the deficiencies in the prior art, the object of the present invention is to provide a kind of method of optical correction, it need not utilize reciprocal mask pattern compensation, can improve optical proximity effect (OPE), thereby allows live width to dwindle, and can not have influence on the development of industry; And each regional critical dimension can need be done optic adjustment (as stop opening, time shutter, exposure according to it ... or the like), help the carrying out of optical lithography.
In order to finish the present invention's purpose, the invention provides a kind of method of optical correction, after it draws up specification by component design department according to design rule (design rule) earlier, according to the pattern on the compactness extent design light shield of arrangements of components, again those patterns are manufactured in respectively on the multi-disc light shield, and the figure compactness extent that wherein is positioned on the same light shield is similar, after, in regular turn these light shields are exposed, so that required line pattern is transferred on the photoresistance.
In order to reach the present invention, provide the method for another kind of optical correction, after it draws up specification by component design department according to design rule (design rule) earlier, according to the pattern on the compactness extent design light shield of arrangements of components, again this original light shield (being called for short with female light shield thereafter) is divided into a plurality of sub-light shields, wherein, the figure compactness extent that is positioned on the same sub-light shield is similar; Afterwards, see through these sub-light shields in regular turn and carry out step of exposing, and this mother's mask pattern can be transferred on this photoresistance.
Be noted that at this, the above-mentioned method that each (son) light shield is exposed, be to be engaged in simultaneously under the optical condition that the assembly under the various compactness extents can allow to carry out respectively, therefore the assembly live width that forms can't be restricted, and its critical dimension is appropriate.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
The simple declaration of accompanying drawing:
Fig. 1 display optical proximity effect causes the situation of photoresistance aliasing;
Fig. 2 shows reverse pattern compensation of known light shield and the standard pattern transfer scenario that is presented thereof;
Fig. 3 A, 3B show that respectively the embodiment of the invention provides line pattern mother's light shield with reasonable organization and the situation that cuts into sub-light shield thereof;
Fig. 4 A, 4B show respectively along the A-A among Fig. 3 B, B-B, and the design transfer situation that is produced on positive and negative photoresistance of C-C tangent plane;
The luminous energy strength ratio that Fig. 5 A, 5B show the required projection of imaging on positive and negative photoresistance of sub-light shield 301,302,303 respectively;
Fig. 6 A is presented under the different stop openings, see through measure after sub-light shield 301,302,303 exposures the distribution of CD changing value;
Fig. 6 B is presented under the density of not sharing the same light (coherence) degree, see through measure after sub-light shield 301,302,303 exposures the distribution of CD changing value; And
Fig. 6 C is shown under the different luminous energy intensity, see through measure after light shield 301,302,303 exposures the distribution of CD changing value.
The figure number explanation
10 ~ line pattern, 12 ~ photoresistance pattern
20 ~ mask pattern, 22 ~ photoresistance pattern
24 ~ tup line 30 ~ female light shield
301,302,303 ~ sub-light shield 32 ~ line pattern
321,322,323 ~ sub-line pattern
Embodiment
Please referring to Fig. 3 A, 3B, more specifically to understand bearing calibration of the present invention; At first, earlier draw up specification according to design rule (design rule) by component design department after, according to the pattern on the compactness extent design light shield of arrangements of components, after, whether can select will provide female light shield; For example, provide a female light shield 30 earlier, as shown in Figure 3A, and, on this mother's light shield 30, form a plurality of line patterns 32.And then, the density degree of complying with these line patterns should be divided into a plurality of slice, thin piece light shields by mother's light shield 30, and pattern density degree fellow system is positioned on the same slice, thin piece light shield.For example, please refer to Fig. 3 B, this mother's light shield 30 is divided into three slice, thin piece light shields 301,302,303 according to the density degree of its line pattern, and the density degree that is positioned at the sub-line pattern 321,322,323 on each slice, thin piece light shield 301,302,303 is respectively close (dense), medium, thin.Please note at this, if the initial step that female light shield is not provided, also can be after component design department design line pattern according to the compactness extent of arrangements of components, the line pattern that this design is finished directly is manufactured in respectively on these sub-light shields 301,302,303, and its situation is shown in Fig. 3 B.Present embodiment is an example so that the step that female light shield is provided to be arranged then, and so this explanation can't limit the protection domain of applying for a patent.In addition, for convenience of description for the purpose of, the described sub-light shield number of present embodiment be with 3 be example, and its size is identical, the number of right in fact required sub-light shield and big young pathbreaker do with the needs of circuit density or application and adjust as all.
Next, in regular turn this sub-light shield 301,302,303 is carried out step of exposing, it comprises the compactness extent to three kinds of patterns, adjusts the parameter such as stop opening, luminous energy intensity of board respectively, to obtain optimal critical dimension (CD) value of each mask pattern; Please refer to Fig. 4 A, 4B, it is the design transfer that sees through the sub-light mask image 321,322,323 of Fig. 3 B; As 4A figure, its be respectively along A-A, B-B, and the C-C tangent plane go up shown pattern at positive photoresistance (not label), and 4B figure is also for along A-A, B-B, and C-C tangent plane shown pattern on negative photoresistance.
Accept the adjustment of above-mentioned parameters, please referring to Fig. 5 A, 5B, shown in be respectively the required acceptance of imaging on positive and negative photoresistance of sub-light shield 301,302,303 the luminous energy strength ratio.This promptly, to the exposure of each light shield the time can adjust its energy condition respectively; For example, if desire to image on the positive photoresistance, when then light shield 301 being exposed, can select to adopt the energy distribution curve particular energy of the light shield 301 of 5A figure, to obtain desirable exposure result with the pattern of light shield 301.
Please referring to Fig. 6 A, shown in be under different stop openings, see through measure after sub-light shield 301,302,303 exposures the distribution of CD changing value; At this is to be example with positive photoresistance, when seeing through light shield 301 and carry out exposure actions, can select to be adjusted into corresponding to the most approaching desirable CD value; Its stop opening size A
301And when seeing through light shield 302 and carrying out exposure actions, then can select to adjust its stop opening is A
302The stop opening of light shield 303 then selects to be adjusted into A
303
Please referring to Fig. 6 B, shown in be under the density degree of not sharing the same light, see through measure after sub-light shield 301,302,303 exposures the distribution of CD changing value; At this is to be example with positive photoresistance, when seeing through light shield 301 and carry out exposure actions, can select to be adjusted into corresponding to the big or small S of the light density of the most approaching desirable CD value
301And when seeing through light shield 302 and carrying out exposure actions, then can select to adjust its light density size and be S
302Light density size when seeing through light shield 303 exposures then selects to be adjusted into S
303
Please referring to Fig. 6 C, shown in be under different luminous energy intensity, see through measure after light shield 301,302,303 exposures the distribution of CD changing value; At this is to be example with positive photoresistance, when seeing through light shield 301 and carry out exposure actions, can select to be adjusted into the luminous energy intensity E corresponding to the most approaching desirable CD value
301And when seeing through light shield 302 and carrying out exposure actions, then can select to adjust its luminous energy intensity is E
302Luminous energy intensity when seeing through light shield 303 exposures then selects to be adjusted into E
303
According to optical correction method of the present invention, it utilizes a female light shield is cut into a plurality of sub-light shields (or directly the line pattern of different density degree being made on a plurality of the sub-light shields) according to the difference of its density degree, the desirable critical dimension that can reach again at sub-light shield under each density degree, and give a certain conditions (as stop opening, exposure energy etc.), see through the action that these sub-light shields expose to photoresistance more in regular turn, thereby reach a mask pattern verily is transferred to purpose on the photoresist layer, it has not only improved the problem that proximity effect caused, and the method for this kind improvement can't be subject to the assembly pattern line-width that lowers day by day, and development has potentiality.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly know art technology person; without departing from the spirit and scope of the present invention; when can doing to change and retouching, so protection scope of the present invention is when looking the accompanying Claim book and being as the criterion in conjunction with instructions and the accompanying drawing person of defining.
Claims (7)
1. one kind is reduced the optical proximity effect method, is applicable to the component design of the density degree of distinguishing line pattern, comprises the following steps:
A plurality of light shields are provided; And
This line pattern is formed on these light shields, and pattern density degree fellow is positioned at on a slice light shield.
2. the method for claim 1, wherein also comprise a light source is provided.
3. method as claimed in claim 2 wherein, also comprises a photoresistance is provided, so that the pattern of these light shields can be transferred on this photoresistance in regular turn because of follow-up exposure actions.
4. method as claimed in claim 3 wherein, is to utilize this light source to see through this sub-light shield in regular turn this photoresistance to be exposed.
5. method as claimed in claim 4, wherein, the live width that this photoresistance can provide according to each sub-light shield in the rayed amount in when exposure and set different values.
6. one kind is reduced the optical proximity effect method, comprises the following steps:
One original layout case is provided;
Density degree according to circuit is divided into a plurality of sub-line patterns with this original layout case;
Form the sub-light shield of multi-disc according to this sub-line pattern, and pattern density degree fellow is positioned on the same slice, thin piece light shield;
One light source is provided; And
The pattern of this sub-light shield provides a photoresistance, so that can be transferred on this photoresistance in regular turn because of follow-up exposure actions.
7. method as claimed in claim 6, wherein, the live width that this photoresistance can provide according to each sub-light shield in the rayed amount in when exposure and set different values.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011104139A CN1180315C (en) | 2001-04-03 | 2001-04-03 | Method for reducing optical proximity effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011104139A CN1180315C (en) | 2001-04-03 | 2001-04-03 | Method for reducing optical proximity effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1378102A true CN1378102A (en) | 2002-11-06 |
| CN1180315C CN1180315C (en) | 2004-12-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011104139A Expired - Lifetime CN1180315C (en) | 2001-04-03 | 2001-04-03 | Method for reducing optical proximity effect |
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| Country | Link |
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| CN (1) | CN1180315C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325993C (en) * | 2003-02-17 | 2007-07-11 | 索尼株式会社 | Mask correcting method |
| CN100339765C (en) * | 2003-08-18 | 2007-09-26 | 旺宏电子股份有限公司 | Light cover for decreasing optical approaching effect |
| CN101171545B (en) * | 2005-05-10 | 2014-09-03 | 朗姆研究公司 | Computer readable mask shrink control processor |
| US9036105B2 (en) | 2010-12-21 | 2015-05-19 | Lg Display Co., Ltd. | Liquid crystal display device and method of manufacturing the same |
| CN107179625A (en) * | 2017-06-29 | 2017-09-19 | 惠科股份有限公司 | A kind of manufacture method of the spacer units of display panel, light shield and display panel |
-
2001
- 2001-04-03 CN CNB011104139A patent/CN1180315C/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325993C (en) * | 2003-02-17 | 2007-07-11 | 索尼株式会社 | Mask correcting method |
| CN100339765C (en) * | 2003-08-18 | 2007-09-26 | 旺宏电子股份有限公司 | Light cover for decreasing optical approaching effect |
| CN101171545B (en) * | 2005-05-10 | 2014-09-03 | 朗姆研究公司 | Computer readable mask shrink control processor |
| US9036105B2 (en) | 2010-12-21 | 2015-05-19 | Lg Display Co., Ltd. | Liquid crystal display device and method of manufacturing the same |
| CN107179625A (en) * | 2017-06-29 | 2017-09-19 | 惠科股份有限公司 | A kind of manufacture method of the spacer units of display panel, light shield and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1180315C (en) | 2004-12-15 |
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Granted publication date: 20041215 |