CN1370853A - Production process of metal sputtering target - Google Patents
Production process of metal sputtering target Download PDFInfo
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- CN1370853A CN1370853A CN 01104414 CN01104414A CN1370853A CN 1370853 A CN1370853 A CN 1370853A CN 01104414 CN01104414 CN 01104414 CN 01104414 A CN01104414 A CN 01104414A CN 1370853 A CN1370853 A CN 1370853A
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Abstract
The present invention relates to the production process of sputtering metal target material. Single metal Al, Ti or Cu or their alloy formed with at least one of Cu, Si, Zr, Ac, Mo, etc. produced through double-Vee smelting process is high temperature forged to produce sputtering metal target material with fine and homogeneous structure suitable for use in semiconductor industry and photoelectronic industry.
Description
The present invention is relevant a kind of metal sputtering target (metal target for sputtering), particularly relevant a kind of homogenize manufacture method of metal sputtering target of its height with fine grain size and two second phase refinements of making is to meet the metal sputtering target that semiconductor industry and opto-electronics are suitable for.
By the sputter technology is the ion that utilizes the electricity slurry to be produced, and mat work ion pair sputtered target material bombards, and makes the sputtered target material atomic deposition that is produced in the film forming a kind of thin film manufacture process technology of substrate surface.The sputter technology is to form one of many known technology of thin film deposition.In recent years, metal level or non-metallic layer required in the relevant processing procedure of semiconductor industry and opto-electronics have been applied to widely.Film forming character during sputter has very great effect for product quality, and it has high sputter rate during manufacturing, and stable processing procedure, has the advantage that reduces cost for the manufacturing of economic scale, and these all are the key factors of considering when producing.The character of formed property of thin film of sputter and sputtered target material itself, relevant such as the distribution character of grain size and secondary phase morphology.
According to traditional casting, shaping, annealing and forging manufacturing technique, produce metal sputtering target for the miniaturization of its grain size and two second phases and homogenize its restriction is all arranged.And can form the forming technique that sprays of relative smaller particle size, and too high because of its equipment and production cost, and be not suitable for the commercial production manufacturing of economic scale.
In view of this, main purpose of the present invention provides a kind of manufacture method of metal sputtering target, and it can make grain size and two second phase miniaturizations and homogenize, and has the metal sputtering target of commercial application value; When being applied to sputter, making it be able to it has high sputter rate and excellent membrane quality.
The present invention provides a kind of metal sputtering target, make the metal sputtering target body for example comprise: aluminium, titanium or copper, no matter being selected from, single metal or interpolation for example comprise: the formed alloys of at least a different metal such as copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, scandium, the character that all has grain size and two second phase miniaturizations and homogenize meets the commercialization demand that is applicable to semiconductor industry and opto-electronics.
The present invention provides a kind of manufacturing technology of metal sputtering target in addition, be will be via the melting of two V melting processing procedure, aluminium, titanium or the copper of the single metal that produces, or interpolation is selected from the formed alloys of at least a different metal such as copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, scandium, again via the high temperature forging procedure for processing, the height that produces grain size and the two second phase miniaturizations metal sputtering target that homogenizes.Wherein, this pair V melting processing procedure is to the invention provides to produce grain size and two second phase miniaturizations and the high melting method that homogenizes, this method comprises: a vacuum induction melting (Vacuum lnduction Melting, be called for short VIM) step, an and vacuum arc refining (Vacuum Arc Remelting, be called for short VAR) step, so title is two V melting processing procedures.
For making your juror can further understand structure of the present invention, method feature and purpose thereof, the attached now detailed description with graphic and preferred embodiment as after, wherein:
Fig. 1 is that aluminum-titanium alloy is through single straight empty induction melting (WIM), the material grains micro-organization chart that is produced;
Fig. 2 is that aluminum-titanium alloy is through two V melting processing procedures, the material grains micro-organization chart that is produced;
Fig. 3 be aluminum-titanium alloy through single vacuum induction melting (VIM), the material secondary phase micro-organization chart that is produced;
Fig. 4 is that aluminum-titanium alloy is through two V melting processing procedures, the material secondary phase micro-organization chart that is produced; And
Fig. 5 is that aluminum-titanium alloy is through two V melting processing procedures and high temperature forging processing, the material microstructure figure that is produced.
Be widely used in the thin film deposition process of semiconductor industry and opto-electronics by the metal sputtered target material, the tissue of crystal grain and two second phases in its material, cause is different with base atom bound energy, and the effect of the sputtering rate difference that causes can have influence on sedimentary membrane quality characteristic.General traditional forging type can't obtain highly purified single metal, for the alloy that adds different metal, also can not produce the alloy of uniform ingredients, and it is to grain size and two second phase miniaturizations and homogenize and all have it restricted.In view of this, the present invention is a melting mode of utilizing the empty induction melting of tool (VIM), produce single metal or add the formed alloy of other different metals, but single vacuum induction melting (VIM) still is subject to the influence of the natural coagulation characteristic of conventional cast mode, can't produce finer crystal grain, and also therefore solidification rate is bigger for its two second phase, and then causes having two second phases problem excessive and pockety to produce.
Therefore, the single metal that the aforementioned induction melting of single vacuum (VIM) is produced or add the formed alloy of other different metals, again via vacuum arc refining (VAR) processing procedure, the purpose that can obviously obtain grain size and two second phase miniaturizations and homogenize.Wherein, this vacuum arc refining (VAR) is a kind of in the environment of vacuum, by the mode of electric arc remelting, with single metal or alloy is local melt after solidified process again, and then can produce a kind of melting method of the single metal or alloy that height homogenizes.This refinement step is that the single metal or alloy that desire produces is used as electrode, between this electrode and a conductive crucible, utilizes a high direct supply, makes its guiding produce electric arc; Then, utilize the electric arc that is produced between this electrode and the conductive crucible, melt, this melts is dropped down onto solidify in the conductive crucible and obtain by the formed electrode of single metal or alloy.So,, be of the present invention pair of V melting processing procedure again through a vacuum arc refining (VAR) via after a vacuum induction melting (VIM) step.Be with, via aforesaid pair of V melting processing procedure, the aluminium of the single metal that is produced, titanium or copper, or interpolation is selected from the formed alloys of at least a different metal such as copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, scandium, the result that can obviously obtain grain size and two second phase miniaturizations and homogenize.
It promptly is example with the aluminum-titanium alloy, Fig. 1 is that aluminum-titanium alloy is through single vacuum induction melting (VIM), the material grains micro-organization chart that is produced, the aluminium of itself and Fig. 2, through two V melting processing procedures, the material grains micro-organization chart that is produced compares with regard to alloy, can obviously observe and learn, via the grain size that two V melting processing procedures are obtained,, obvious than only fine many via single vacuum induction melting processing procedure approximately less than 30 microns.In addition, Fig. 3 is that aluminum-titanium alloy is through single vacuum induction melting (VIM), the material secondary phase micro-organization chart that is produced, the aluminum-titanium alloy of itself and Fig. 4 is through two V melting processing procedures, the material secondary phase microstructure solid phase that produced relatively can obviously observe and learn, the formed two second phase length of titanium metal of being added via two V melting processing procedures, approximately less than 20 microns and be evenly distributed, obviously than fine and be evenly distributed via single vacuum induction melting processing procedure.Proved that the more two V melting processing procedures of warp compared to only, via single vacuum induction melting processing procedure, have preferable miniaturization and the character that homogenizes.In addition, add a small amount of different metal kind and consumption, can be according to different application and different, the single metal of aluminium such as the metal sputtering target body, add the formed aluminium alloy of other different metals, it adds other different metal content and is no more than 10% for good, so that its quality of may command and cost.
Fig. 5 is an aluminum-titanium alloy after two V processing procedure meltings, again through high temperature forging processing, and the material microstructure figure that is produced, it organizes microstructure still fine and even.
Be with, via two V melting processing procedures, again via the high temperature forging procedure for processing, the metal sputtering target that is produced, aluminum-titanium alloy be wherein a kind of alloy just, has many single metal or alloy all applicable.Therefore, the aluminium of single metal, titanium, copper or adding other different metals for example comprises: formed alloys such as copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, scandium, it all is the required metal sputtering target of semiconductor industry and opto-electronics, all can utilize the manufacture of above-mentioned aluminum-titanium alloy, the height that forms grain size and the two second phase miniaturizations metal sputtering target that homogenizes, and have commercial application value.Therefore, when being applied to sputter, make it be had high sputter rate and excellent book film quality.
So via enforcement of the present invention, two V melting processing procedures by a vacuum induction melting (VIM) step and a vacuum arc refining (VAR), make generation single metal aluminium-titanium or copper or interpolation is selected from copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, the formed alloy of at least a different metal such as scandium, again via the procedure for processing of high temperature forging, can produce and be applicable to semiconductor industry and opto-electronics, and, really be the manufacture method of metal sputtering target not seen before with miniaturization and the high metal sputtering target that homogenizes.
Disclosed person is a kind of of preferred embodiment, and patent right category of the present invention is not all taken off in partial such as change or modification and come from technological thought of the present invention and be easy to the person of knowing by inference by the people who has the knack of this skill.
To sum up institute is old, and no matter the present invention is showing it totally different in known technical characterictic with regard to purpose, means and effect, and it is at first created and closes in practicality, is also meeting the patent requirement of invention, earnestly asks your juror and perceives, and pray and vouchsafe patent early, so that Jiahui society, the true feeling moral is just.
Claims (12)
1. the manufacture method of a metal sputtering target, it is characterized in that, be will be via two V melting processing procedures, aluminium, titanium or the copper of the single metal that produces, or interpolation is selected from the formed alloys of at least a different metal such as copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, scandium, again via the high temperature forging procedure for processing, so that produce the height of grain size and the two second phase miniaturizations metal sputtering target that homogenizes.
2. the manufacture method of metal sputtering target according to claim 1, it is characterized in that wherein the metal sputtering target body includes the single metal of aluminium or interpolation is selected from the formed aluminium alloys of at least a different metal such as copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, scandium.
3. the manufacture method of metal sputtering target according to claim 2 is characterized in that, wherein the single metal of the aluminium of metal sputtering target body adds the formed aluminium alloy of other different metals, and it adds other different metal content and is no more than 10%.
4. the manufacture method of metal sputtering target according to claim 1 is characterized in that, wherein this pair V melting processing procedure comprises: a vacuum induction melting step, and a vacuum arc refinement step.
5. the manufacture method of metal sputtering target according to claim 2 is characterized in that, wherein the two second phase length that produced of aluminum-titanium alloy sputtered target material are less than 20 microns.
6. the manufacture method of metal sputtering target according to claim 2 is characterized in that, wherein the crystal grain that produced of aluminum-titanium alloy sputtered target material is less than 30 microns.
7. the manufacture method of a metal sputtering target, it is characterized in that, be the aluminium that metallic substance is comprised single metal, titanium or copper, or interpolation is selected from copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, at least a different metal such as scandium, via two V melting processing procedures, produce the aluminium of single metal, titanium or copper, or interpolation is selected from copper, silicon, titanium, zirconium, actinium, aluminium, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, the alloy cast ingot of at least a different metal such as scandium, again through high temperature forging processing, form one its height of grain size and two second phase miniaturizations metal sputtering target that homogenizes is arranged.
8. the manufacture method of metal sputtering target according to claim 7, it is characterized in that, wherein comprise the single metal of aluminium or interpolation is selected from the formed aluminium alloys of at least a different metal such as copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, scandium.
9. the manufacture method of metal sputtering target according to claim 8, it is characterized in that, wherein comprise the single metal of aluminium or interpolation is selected from the formed aluminium alloys of at least a different metal such as copper, silicon, titanium, zirconium, actinium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, scandium, it adds other different metal content and is no more than 10%.
10. the manufacture method of metal sputtering target according to claim 7 is characterized in that, wherein two V meltings are granulated and comprised: a vacuum induction melting step, and a vacuum arc refinement step.
11. the manufacture method of metal sputtering target according to claim 8 is characterized in that, wherein the two second phase length that produced of aluminum-titanium alloy sputtered target material are less than 20 microns.
12. the manufacture method of metal sputtering target according to claim 8 is characterized in that, wherein the crystal grain that produced of aluminum-titanium alloy sputtered target material is less than 30 microns.
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| CN 01104414 CN1370853A (en) | 2001-02-23 | 2001-02-23 | Production process of metal sputtering target |
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| CN 01104414 CN1370853A (en) | 2001-02-23 | 2001-02-23 | Production process of metal sputtering target |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101224496B (en) * | 2007-01-18 | 2010-05-19 | 光洋应用材料科技股份有限公司 | Manufacture method of sputtering targets |
| CN1777690B (en) * | 2003-03-28 | 2010-11-03 | Ppg工业俄亥俄公司 | Substrates coated with mixtures of titanium and aluminum materials, methods for making the substrates, and cathode targets of titanium and aluminum metal |
| CN1946507B (en) * | 2004-02-27 | 2010-11-17 | 豪梅公司 | Method of making sputtering target |
| CN102000702A (en) * | 2010-12-21 | 2011-04-06 | 重庆大学 | Processing technology of high-purity tantalum sputtering target material |
| CN102165093A (en) * | 2008-09-30 | 2011-08-24 | Jx日矿日石金属株式会社 | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film |
| CN101008076B (en) * | 2006-01-23 | 2012-08-22 | W.C.贺利氏有限公司 | Sputtering target having high fusion phase |
| US8911528B2 (en) | 2005-10-20 | 2014-12-16 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
| US9017762B2 (en) | 2010-06-30 | 2015-04-28 | H.C. Starck, Inc. | Method of making molybdenum-containing targets comprising three metal elements |
| US9150955B2 (en) | 2010-06-30 | 2015-10-06 | H.C. Starck Inc. | Method of making molybdenum containing targets comprising molybdenum, titanium, and tantalum or chromium |
| US9334562B2 (en) | 2011-05-10 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
| US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
| US9476134B2 (en) | 2008-09-30 | 2016-10-25 | Jx Nippon Mining & Metals Corporation | High purity copper and method of producing high purity copper based on electrolysis |
| CN107109629A (en) * | 2014-12-31 | 2017-08-29 | 应用材料公司 | Method and apparatus for the brief summary control in titanium tungsten target |
| CN110257783A (en) * | 2019-06-27 | 2019-09-20 | 上海交通大学 | A kind of low cost preparation method of titanium silicon target |
| WO2021023283A1 (en) * | 2019-08-08 | 2021-02-11 | 湖南稀土金属材料研究院 | Aluminum scandium alloy target, and manufacturing method for same |
| CN114395749A (en) * | 2021-11-13 | 2022-04-26 | 洛阳高新四丰电子材料有限公司 | Preparation method of large-size multi-element Ag-based alloy sputtering target material |
| CN115747731A (en) * | 2022-11-21 | 2023-03-07 | 先导薄膜材料（广东）有限公司 | Preparation method of metal scandium rare earth target material |
| CN115747731B (en) * | 2022-11-21 | 2024-06-07 | 先导薄膜材料（广东）有限公司 | Preparation method of metal scandium rare earth target material |
-
2001
- 2001-02-23 CN CN 01104414 patent/CN1370853A/en active Pending
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1777690B (en) * | 2003-03-28 | 2010-11-03 | Ppg工业俄亥俄公司 | Substrates coated with mixtures of titanium and aluminum materials, methods for making the substrates, and cathode targets of titanium and aluminum metal |
| CN1946507B (en) * | 2004-02-27 | 2010-11-17 | 豪梅公司 | Method of making sputtering target |
| US8911528B2 (en) | 2005-10-20 | 2014-12-16 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
| CN101008076B (en) * | 2006-01-23 | 2012-08-22 | W.C.贺利氏有限公司 | Sputtering target having high fusion phase |
| CN101224496B (en) * | 2007-01-18 | 2010-05-19 | 光洋应用材料科技股份有限公司 | Manufacture method of sputtering targets |
| US9441289B2 (en) | 2008-09-30 | 2016-09-13 | Jx Nippon Mining & Metals Corporation | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film |
| CN102165093A (en) * | 2008-09-30 | 2011-08-24 | Jx日矿日石金属株式会社 | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film |
| US9476134B2 (en) | 2008-09-30 | 2016-10-25 | Jx Nippon Mining & Metals Corporation | High purity copper and method of producing high purity copper based on electrolysis |
| US9945023B2 (en) | 2010-06-30 | 2018-04-17 | H.C. Starck, Inc. | Touch screen device comprising Mo-based film layer and methods thereof |
| US9017762B2 (en) | 2010-06-30 | 2015-04-28 | H.C. Starck, Inc. | Method of making molybdenum-containing targets comprising three metal elements |
| US9150955B2 (en) | 2010-06-30 | 2015-10-06 | H.C. Starck Inc. | Method of making molybdenum containing targets comprising molybdenum, titanium, and tantalum or chromium |
| CN102000702B (en) * | 2010-12-21 | 2012-09-26 | 重庆大学 | Processing technology of high-purity tantalum sputtering target material |
| CN102000702A (en) * | 2010-12-21 | 2011-04-06 | 重庆大学 | Processing technology of high-purity tantalum sputtering target material |
| US9334562B2 (en) | 2011-05-10 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
| US9922808B2 (en) | 2011-05-10 | 2018-03-20 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
| US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
| US10643827B2 (en) | 2012-05-09 | 2020-05-05 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
| CN107109629B (en) * | 2014-12-31 | 2020-04-10 | 应用材料公司 | Method and apparatus for nodule control in titanium tungsten targets |
| CN107109629A (en) * | 2014-12-31 | 2017-08-29 | 应用材料公司 | Method and apparatus for the brief summary control in titanium tungsten target |
| CN110257783A (en) * | 2019-06-27 | 2019-09-20 | 上海交通大学 | A kind of low cost preparation method of titanium silicon target |
| CN110257783B (en) * | 2019-06-27 | 2020-12-01 | 上海交通大学 | Low-cost preparation method of titanium-silicon alloy target material |
| WO2021023283A1 (en) * | 2019-08-08 | 2021-02-11 | 湖南稀土金属材料研究院 | Aluminum scandium alloy target, and manufacturing method for same |
| CN114395749A (en) * | 2021-11-13 | 2022-04-26 | 洛阳高新四丰电子材料有限公司 | Preparation method of large-size multi-element Ag-based alloy sputtering target material |
| CN115747731A (en) * | 2022-11-21 | 2023-03-07 | 先导薄膜材料（广东）有限公司 | Preparation method of metal scandium rare earth target material |
| CN115747731B (en) * | 2022-11-21 | 2024-06-07 | 先导薄膜材料（广东）有限公司 | Preparation method of metal scandium rare earth target material |
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