CN1356595A - Linear-array light source for photoetching scanner of array-type integrated circuit - Google Patents
Linear-array light source for photoetching scanner of array-type integrated circuit Download PDFInfo
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- CN1356595A CN1356595A CN 01144580 CN01144580A CN1356595A CN 1356595 A CN1356595 A CN 1356595A CN 01144580 CN01144580 CN 01144580 CN 01144580 A CN01144580 A CN 01144580A CN 1356595 A CN1356595 A CN 1356595A
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- array
- optical fiber
- light source
- linear
- integrated circuit
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- 238000001259 photo etching Methods 0.000 title description 7
- 239000013307 optical fiber Substances 0.000 claims abstract description 38
- 239000000835 fiber Substances 0.000 claims abstract description 22
- 238000003384 imaging method Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000003491 array Methods 0.000 claims abstract 3
- 238000005530 etching Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000011162 core material Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- Optical Couplings Of Light Guides (AREA)
Abstract
A linear-array light source for the scanner used to photoetch on array-type integrated circuit is composed of n semiconductor lasers as light source, n convergent lens, n bunches of m optical fibres, m optical fibre head linear arrays of n optical fibres, and imaging lens correspondent to said linear arrays. The said linear array has opticla fibre array layer, light intensity equalizing layer, and phase aperture layer. Its advantages include high lighting uniformity and higher resolution.
Description
Technical field
The array light source that a kind of array integrated circuit (IC) etching scanister is used belongs to scanning optical head technical field, relates in particular to the scanning optical head that a kind of array integrated circuit (IC) photo etching system neutral line light source scanning device is used.
Background technology
Number of patent application is that " 01120600.4 ", name are called the Chinese invention patent (inventor: Xu Duanyi of " the linear light sorurce scanister that is used for the array integrated circuit (IC) photo etching system ", Qi gives birth to, Jiang Peijun, Fan Xiaodong, money is female) in disclose a kind of with the light source (its structure as shown in Figure 1) of array light source as the scanning optical head.Wherein, it contains: line up the array light source 6 that linear array is formed by n adjacent low-light source, convergent lens 7, the object lens 9 of high-NA, the solid immersion lens 10 and optic fibre separation certain angle of reflected back reentered the hologram sheet 8 that is mapped on the spot detector 12.The 11st, silicon chip to be processed.Single low-light source is shaped as strict square, and its output intensity has the height consistance, and size can reach 10um * 10um even littler.
According to domestic and international result for retrieval, at present without any the array light source solution that satisfies this requirement.
Summary of the invention
The object of the present invention is to provide a kind of array light source that supplies practical array integrated circuit (IC) etching scanister to use.
The invention is characterized in, it contains: the following elements that is being arranged in order in same linear array length: n output intensity homogeneous semiconductor laser instrument, n the convergent lens of assembling this laser emitting light respectively, n bundle receives the light transmitting fiber of every Shu Gongyou m root optical fiber of said lens emergent light respectively, and m by respectively from the straight linear array optical fiber head of n root optical fiber arrangements of each fibre bundle and the imaging len of each linear array optical fiber head correspondence.Described linear array optical fiber head contains successively: arrange the fiber array layer that forms by the simple optical fiber from each fibre bundle, cover the light intensity conforming layer made from mask on the linear array optical fiber head, corresponding optical fiber place is strict square and has other zones of high-transmission rate that the phase place aperture layer of high-absorbility is then arranged to the laser of used wavelength.
Use proof: it can accomplish the end in view.
Description of drawings:
Fig. 1: utilize continuously principle schematic every the scanister of the array integrated circuit (IC) photo etching system of array light source illumination.
Fig. 2: show the equivalent light path sketch of realizing array light source in array low-light source at interval with two.
Fig. 3: linear array optical fiber head synoptic diagram.
Fig. 4: linear array optical fiber head sectional view.
Fig. 5: phase place aperture layer sketch.
Embodiment
As shown in Figure 2, the 1st, semiconductor laser array (1 (1), 1 (2) ..., total total n the semiconductor laser of 1 (n) expression); The 2nd, convergent lens has n equally; The 3rd, fibre bundle (3 (1), 3 (2) ... total total n the fibre bundle of 3 (n) expression), 3 (1) (1), 3 (1) (2) etc. all is that (every bundle fibre bundle has m root optical fiber to simple optical fiber, such as fibre bundle 3 (1), total optical fiber m root is numbered 3 (1) (1), 3 (1) (2) in the drawings,, 3 (1) (m)), the 4th, the linear array optical fiber head, the 5th, imaging len, 6 are the output beam of this device---array light source (6 (1), 6 (2),, total total m the identical array light source of 6 (m) expression).
Every bundle optical fiber 3 is got one and is lined up the formation formula in order, forms a linear array optical fiber head 4, and this linear array optical fiber head is through behind the imaging len 5, and further minification becomes the array light source that meets integrated circuit (IC) photo etching system scanister needs.Such as optical fiber 3 (1) (1), 3 (2) (1) ..., 3 (n) (1) respectively from fibre bundle 3 (1), and 3 (2) ..., 3 (n), the length that they are formed is that the linear array optical fiber head of n is exactly an array light source 6 (1) through imaging len 5 back imagings.Wherein each array light source length is by the laser instrument number n decision of semiconductor laser array 1, and the number of array light source is determined by the optical fiber radical m in the fibre bundle 3.M wherein, n can decide according to concrete needs.
From its shooting angle of light beam of fiber core outgoing is stochastic distribution in less than the scope of the angle of total reflection (angle of total reflection of used laser when core material incides clad material), imaging len 5 also can be as required be optimized the illumination angle in low-light source when dwindling the low-light Source size.
In the present embodiment, it is the blue laser of 405nm that semiconductor laser adopts wavelength, n=100, and m=100, Optical Fiber Numerical Aperture is consistent with the numerical aperture of convergent lens 2, is 0.1.This device can provide 100 evenly array light sources of illumination, synchro control, the linear array that each array light source all is made up of 100 * 1 square low-light source simultaneously.
Fig. 3 and Fig. 4 are for being the structure diagram of linear array optical fiber head.As shown in the figure, 13 is the phase place aperture layer, and 14 is light intensity homogenize layer, and 15 is fiber array.16 is fibre cladding, and 17 is fiber core, and 18 is the phase place perforate on the phase place aperture layer of this optical fiber correspondence.4 (1), 4 (2) ..., the total total n root optical fiber of 4 (n) expression.
The light intensity homogenize layer made from negative photoresist 14 plays homogenizing illumination light intensity.With linear array optical fiber is the output beam of fiber array 15, directly to the negative photoresist exposure once, obtains exposure intensity and the consistent mask of linear array optical fiber light distribution; To this mask process, promptly this negative photoresist is developed, solidifies processing then, obtain one deck mask, make that the regional transmissivity that depth of exposure was more shallow originally on this mask is big, on the contrary then smaller.This mask is covered on the linear array optical fiber head according to exposure position, just can play the effect of homogenizing light intensity.
In the present embodiment, optical fiber radical n=100, fibre core 17 diameters 40 μ m, covering 16 diameters 55 μ m.Through hole 18 on the phase place aperture layer 13 is the square of 30 μ m * 30 μ m.Imaging len 6 enlargement factors 2/3 among Fig. 2, the array light source total length is 2mm like this, the size in wherein single low-light source is 20 μ m * 20 μ m.
Fig. 5 is the shape of phase place aperture layer 13 on the linear array optical fiber head 4.Among the figure, black region represents that this place's material has high-absorbility to used laser, and white portion (being strict square) represents that then this place's material has high-transmission rate to used laser.Like this, the single source after the outgoing just has the square shape of rule.This phase place aperture layer can be to obtain with common phase-change material photoetching.
Because each light source in the array light source can be controlled its light on and off by the switch of controlling corresponding laser instrument, the array light source of this programme is when being applied to integrated circuit (IC) photo etching system, on the control program and on the coding to an odd number luminous point and even number luminous point separately control be to realize easily, so the array light source of this programme can equivalence one-tenth on same straight line.
Claims (3)
1. array light source that array integrated circuit (IC) etching scanister is used, contain many linear arrays that are shaped as strict square and the uniform single low-light of output intensity source composition, it is characterized in that, it contains: the following elements that is being arranged in order in same linear array length: n output intensity homogeneous semiconductor laser instrument, n the convergent lens of assembling this laser emitting light respectively, n bundle receives the light transmitting fiber of every Shu Gongyou m root optical fiber of said lens emergent light respectively, and m by respectively from the straight linear array optical fiber head of n root optical fiber arrangements of each fibre bundle and the imaging len of each linear array optical fiber head correspondence.
2. the array light source of using according to the array integrated circuit (IC) etching scanister of claim 1 is characterized in that: described array light source length n and array light source number m can equate, also can be unequal, can adjust as required.
3. the array light source of using according to the array integrated circuit (IC) etching scanister of claim 1 is characterized in that: described linear array optical fiber head contains successively: arrange the fiber array layer that forms by the simple optical fiber from each fibre bundle, cover the light intensity conforming layer made from mask on the linear array optical fiber head, corresponding optical fiber place is strict square and has other zones of high-transmission rate that the phase place aperture layer of high-absorbility is then arranged to the laser of used wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011445807A CN1170209C (en) | 2001-12-21 | 2001-12-21 | Linear-array light source for photoetching scanner of array-type integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011445807A CN1170209C (en) | 2001-12-21 | 2001-12-21 | Linear-array light source for photoetching scanner of array-type integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1356595A true CN1356595A (en) | 2002-07-03 |
| CN1170209C CN1170209C (en) | 2004-10-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011445807A Expired - Fee Related CN1170209C (en) | 2001-12-21 | 2001-12-21 | Linear-array light source for photoetching scanner of array-type integrated circuit |
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| Country | Link |
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| CN (1) | CN1170209C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102844144A (en) * | 2010-02-26 | 2012-12-26 | 爱克西可法国公司 | Method and apparatus for irradiating semiconductor material surface by laser energy |
| CN104166312A (en) * | 2013-05-17 | 2014-11-26 | 上海微电子装备有限公司 | Multi light source large view field spliced illumination system |
| CN104380204A (en) * | 2012-06-21 | 2015-02-25 | 株式会社尼康 | Illumination apparatus, processing apparatus, and method for manufacturing device |
| CN116879316A (en) * | 2023-09-04 | 2023-10-13 | 杭州利珀科技有限公司 | Film material surface defect detection system and method based on optical fiber light source |
-
2001
- 2001-12-21 CN CNB011445807A patent/CN1170209C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102844144A (en) * | 2010-02-26 | 2012-12-26 | 爱克西可法国公司 | Method and apparatus for irradiating semiconductor material surface by laser energy |
| CN102844144B (en) * | 2010-02-26 | 2016-01-20 | 欧洲激光系统和解决方案公司 | For being irradiated method and the device of semiconductor material surface by laser energy |
| CN104380204A (en) * | 2012-06-21 | 2015-02-25 | 株式会社尼康 | Illumination apparatus, processing apparatus, and method for manufacturing device |
| CN104166312A (en) * | 2013-05-17 | 2014-11-26 | 上海微电子装备有限公司 | Multi light source large view field spliced illumination system |
| CN104166312B (en) * | 2013-05-17 | 2016-08-24 | 上海微电子装备有限公司 | A kind of multiple light courcess big field stitching illuminator |
| CN116879316A (en) * | 2023-09-04 | 2023-10-13 | 杭州利珀科技有限公司 | Film material surface defect detection system and method based on optical fiber light source |
| CN116879316B (en) * | 2023-09-04 | 2023-11-17 | 杭州利珀科技有限公司 | Film material surface defect detection system and method based on optical fiber light source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1170209C (en) | 2004-10-06 |
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