CN1352463A - Thin film field emitting cathode with gradually changed electronic transmission layer component - Google Patents
Thin film field emitting cathode with gradually changed electronic transmission layer component Download PDFInfo
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- CN1352463A CN1352463A CN 01140447 CN01140447A CN1352463A CN 1352463 A CN1352463 A CN 1352463A CN 01140447 CN01140447 CN 01140447 CN 01140447 A CN01140447 A CN 01140447A CN 1352463 A CN1352463 A CN 1352463A
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Abstract
A film field emission cathode with ingredient gradually changed in electron transport layer belongs to the technique area of vacuum electron emission type of flat display device, especially in relates to the structural design of plane type field emission cathode. The invention is composed of base plate glass, lower metal electrode, insulated layer with single component, electron transport layer and upper electrode. The medium film the ingredient gradually changed is adopted in electron transport layer, i.e. from button to top of the medium film, the ingredient of high electric affinity is changed to that of lower electric affinity. Metal or semiconductor film with lower work function is adopted in the upper electrode. The invention possesses features of large emissive current, long service life and lower cost. It is suitable for producing field emission type flat display device with large area.
Description
Technical field
The invention belongs to vacuum electronic emission type technical field of flat panel display, particularly a kind of novel planar type field emission cathode structure.
Background technology
Field-transmitting cathode has little sharp type (Spindt type), diamond thin type, carbon nano tube type, metal-insulator-metal type (MIM) and metal-insulator layer-semiconductor layer-metal mold structures such as (MISM).Wherein with the present invention comparatively approaching be a kind of MISM structure of AC driving, as shown in Figure 1.Comprise glass substrate 1, metal bottom electrode 2, insulating barrier 3, semiconductor layer (electron transfer layer) 4 and electrode of metal 5.
In existing AC driving MISM structure, the metal bottom electrode generally adopts aluminium, gold, molybdenum etc., and top electrode adopts gold, platinum, aluminium etc., the insulating barrier tantalum pentoxide, and semiconductor layer (electron transfer layer) is used zinc sulphide materials.
The operation principle of this negative electrode is as follows: at the negative half period of AC drive voltage, the bottom electrode current potential is for just, and the electronics utmost point from power on is injected on the interface of semiconductor layer and insulator layer, exists on the interface with the form of interfacial state electronics.When voltage reversal, the electronics on the interface comes back in the semiconductor layer, and obtains therein quickening, and enters top electrode then, and the surface potential barrier that the electronics that portion of energy is big can overcome top electrode is transmitted in the vacuum.
In said structure, what insulating barrier play a part is current-limiting layer, prevents electrical breakdown.The effect of semiconductor layer is to increase electronics kinetic energy therein, in the hope of reaching bigger electronics emission.In fact, the electronics free path is less than 20 nanometers in the zinc sulphide, and electric field strength is less than 0.15 volt/nanometer, so the electronics mean kinetic energy is less than 3 electron-volts.Because the electron affinity of zinc sulphide is near 4 electron-volts, so the electronics emission is less, be difficult to reach the requirement that high brightness shows required emission current.The for example Japanese result of study of delivering in 91 years, emission current has only 28nA/cm
2The inventor has carried out improving (number of patent application 00103365.4 publication number CN 1265521A) to this structure, has reached to surpass 50a μ A/cm
2Emission current, but still can not satisfy the needed emission current of large-screen high brightness flat-panel display device, its performance still requires further improvement.
Summary of the invention
The objective of the invention is to propose a kind of new cathode construction, satisfy the needed emission current of large-screen high brightness flat-panel display device, to adapt to the requirement of flat panel display development to reach.
The present invention is achieved through the following technical solutions: a kind of membrane field emission cathode of gradually changed electronic transmission layer component, the electron transfer layer and the top electrode that comprise base plate glass, bottom electrode, one-component insulating barrier, graded component is characterized in that described electron transfer layer employing is made of the dielectric film that a kind of material progressively changes to the content gradually variational of another kind of material.Said content gradually variational electron transfer layer adopts high electron affinity material progressively to carry out the transition to low electron affinity material from top to bottom.
Its content gradually variational dielectric film can be the film that a kind of semiconductor component from high electron affinity is gradient to the insulator component of low electron affinity, also can be the film that is gradient to the semiconductor component of low electron affinity from the semiconductor component of high electron affinity; Or the film of the insulator component from the insulator content gradually variational of high electron affinity to low electron affinity constitutes.
In the structure of the membrane field emission cathode of above-mentioned gradually changed electronic transmission layer component, its top electrode is by the argent of low work function, hafnium or titanium family with Vanadium group-III nitride semiconductor, titanium family He Vanadium family carbide semiconductor and contain strontium and the oxide semiconductor thin-film of barium constitutes.Adopt above-mentioned material to help reducing driving voltage so that being easier to from power on the utmost point at the negative half period electronics ratio of driving voltage is injected in the transport layer and goes.
Bottom electrode is the stable metal of the better chemical property of electric conductivity in this structure.The one-component insulating barrier is made of good insulation preformances such as alundum (Al, silicon nitride, tantalum pentoxide, titanate and the big film of dielectric constant.
The present invention compared with prior art has following advantage:
(1) emission current is big, is suitable for using at the high brightness display of field-emitting flat panel.
(2) device capacitor is lower, is fit to broad area device and uses.
(3) alternate current operation is because the feedback effect of electric capacity can obtain more stable emission.
Description of drawings
Fig. 1 is metal-insulator layer-semiconductor layer-metal mold (MISM) field emission cathode structure schematic diagram of existing alternate current operation.
Fig. 2 is a structure principle chart of the present invention.
Embodiment
Below in conjunction with description of drawings operation principle of the present invention and embodiment:
Gradually changed electronic transmission layer component membrane field emission cathode of the present invention comprises base plate glass 1, bottom electrode 2, one-component insulating barrier 3, content gradually variational electron transfer layer 6 and top electrode 5.
In this structure, when adding reverse voltage between upper/lower electrode, the electronics utmost point from power on is injected in the conduction band of electron transfer layer, arrives electron transfer layer and one-component insulating barrier at last at the interface.These electronics can not enter into the one-component insulating barrier, but form the electronics on the interfacial state energy level.When adding forward voltage between electrode, the interfacial state electronics comes back in the electron transfer layer of graded component, and is accelerated therein, obtains enough kinetic energy.Because the electron affinity near top electrode place material is lower,, there is more electronics can overcome the surface potential barrier of top electrode and is transmitted in the vacuum so the energy of electronics can surpass vacuum level.
Bottom electrode is with the metal molybdenum film of 100 nanometer thickness, one-component insulating barrier 3 is 400 nanometer five oxidation two tantalum films, and content gradually variational electron transfer layer 6 adopts the film of the semiconductor sulfuration zinc of the high electron affinity of 100 nanometers to the semiconductor sulfuration magnesium gradual transition of low electron affinity.Top electrode 5 adopts the semiconducting nitride hafnium film of the low work function of 10 nanometer thickness.If the ratio of emission current and interelectrode electric current is defined as emissivity, under 80 volts driving voltage, obtain emissivity greater than 0.5% the field emission current.
Bottom electrode is 400 nanometer five oxidation two tantalum films with the crome metal film of 100 nanometer thickness, one-component insulating barrier 3, and content gradually variational electron transfer layer 5 adopts the film of 50 nano-zinc sulfides to the magnesium sulfide gradual transition.Top electrode 5 adopts the metal silverskin of 10 nanometer thickness.Under 120 volts driving voltage, obtain emissivity greater than 0.5% the field emission current.
Bottom electrode is with the metal molybdenum film of 100 nanometer thickness, one-component insulating barrier 3 is 400 nanometer titanium dioxide hafnium films, and content gradually variational electron transfer layer 6 adopts the insulator oxide calcium gradual transition film of the insulator oxide cadmium calcium of the high electron affinity of 50 nanometers to low electron affinity.Top electrode 5 adopts the semiconducting nitride zirconium film of 10 nanometer thickness low work functions.Under 100 volts driving voltage, obtain emissivity greater than 0.5% the field emission current.
Bottom electrode is 400 nanometer titanium dioxide hafnium films with the metal molybdenum film of 100 nanometer thickness, one-component insulating barrier 3, and content gradually variational electron transfer layer 6 adopts the film of 100 nano oxidized cadmium calcium to the calcium oxide gradual transition.Top electrode 5 adopts the metal hafnium film of 10 nanometer thickness.Under 100 volts driving voltage, obtain emissivity greater than 0.5% the field emission current.
Bottom electrode is with the metallic nickel film of 100 nanometer thickness, one-component insulating barrier 3 is 200 nanometer silicon oxynitride films, and it is that 2: 8 high affinity semiconductor oxide magnesium zinc is counted the film that ratio is 8: 2 a low affinity insulator oxide magnesium zinc gradual transition to the magnesium zinc atom that content gradually variational electron transfer layer 6 adopts 100 nanometer Mg zinc atoms to count ratio.Top electrode 5 adopts the titanium nitride semiconductor film of 10 nanometer thickness.Under 120 volts driving voltage, obtain emissivity greater than 0.5% the field emission current.
Embodiment 6
Bottom electrode is with the metallic nickel film of 100 nanometer thickness, one-component insulating barrier 3 is 200 nanometer silicon oxynitride films, and it is that 2: 8 high electron affinity semiconductor oxide magnesium zinc is counted the film that ratio is 8: 2 a low affinity insulator oxide magnesium zinc gradual transition to the magnesium zinc atom that content gradually variational electron transfer layer 5 adopts 100 nanometer Mg zinc atoms to count ratio.Top electrode 5 adopts the metal hafnium film of 10 nanometer thickness.Under 110 volts driving voltage, obtain emissivity greater than 0.5% the field emission current.
Claims (6)
1, a kind of membrane field emission cathode of gradually changed electronic transmission layer component, contain glass substrate, bottom electrode, insulating barrier, electron transfer layer and top electrode, it is characterized in that described electron transfer layer is made of the dielectric film that a kind of material progressively changes to the content gradually variational of another kind of material.
2, the membrane field emission cathode of gradually changed electronic transmission layer component according to claim 1 is characterized in that described content gradually variational dielectric film is to be gradient to low electron affinity material by high electron affinity material from top to bottom.
3, the membrane field emission cathode of gradually changed electronic transmission layer component according to claim 2 is characterized in that described content gradually variational dielectric film is the film that a kind of semiconductor component from high electron affinity is gradient to the insulator component of low electron affinity.
4, the membrane field emission cathode of gradually changed electronic transmission layer component according to claim 2 is characterized in that described content gradually variational film is the film that is gradient to the semiconductor component of low electron affinity from the semiconductor component of high electron affinity.
5, the membrane field emission cathode of gradually changed electronic transmission layer component according to claim 2 is characterized in that described content gradually variational film is the film of the insulator component from the insulator content gradually variational of high electron affinity to low electron affinity.
6,, it is characterized in that described top electrode is by argent, hafnium or the titanium family of low work function with Vanadium group-III nitride semiconductor, titanium family He Vanadium family carbide semiconductor and contain strontium and the oxide semiconductor thin-film of barium constitutes according to the membrane field emission cathode of the described gradually changed electronic transmission layer component of arbitrary claim in the claim 1 to 5.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB011404477A CN1142572C (en) | 2001-12-07 | 2001-12-07 | Thin film field emitting cathode with gradually changed electronic transmission layer component |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB011404477A CN1142572C (en) | 2001-12-07 | 2001-12-07 | Thin film field emitting cathode with gradually changed electronic transmission layer component |
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| CN1352463A true CN1352463A (en) | 2002-06-05 |
| CN1142572C CN1142572C (en) | 2004-03-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711333A (en) * | 2016-12-22 | 2017-05-24 | 华东理工大学 | Perovskite solar energy cell gradual change heterojunction electron transmission layer preparation method |
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2001
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711333A (en) * | 2016-12-22 | 2017-05-24 | 华东理工大学 | Perovskite solar energy cell gradual change heterojunction electron transmission layer preparation method |
| CN106711333B (en) * | 2016-12-22 | 2019-01-04 | 华东理工大学 | A kind of preparation method of perovskite solar battery gradual change hetero-junctions electron transfer layer |
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| CN1142572C (en) | 2004-03-17 |
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