CN1342894A - Phase-modulated polarized surface plasma wave sensor - Google Patents
Phase-modulated polarized surface plasma wave sensor Download PDFInfo
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- CN1342894A CN1342894A CN 01136668 CN01136668A CN1342894A CN 1342894 A CN1342894 A CN 1342894A CN 01136668 CN01136668 CN 01136668 CN 01136668 A CN01136668 A CN 01136668A CN 1342894 A CN1342894 A CN 1342894A
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- polarized light
- phase
- linearly polarized
- ripple
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Abstract
A phase-modulating polarized surface plasma sensor is disclosed. The laser beam from laser device is converted to linear polarized light by polarizer, and then going to the reflection surface of sensing part. The reflected light is converted to left-hand turning and right-head turning circular polarized beams by 1/4 wave plate, here the lights are then converted to linear polarized beam by analyzer. After the linear polarized beam is converted to electric signal, with the beams phase-locked and amplified, it is outputted to computer to display result. The signal generator sends signal to phase modulator where the phase difference between P wave and S wave is modulated and demodulated by phase-locked amplifier. Its advantages are zero DC background light and high resolution.
Description
Technical field
The present invention relates to a kind of phase-modulated polarized surface plasma wave sensor, belong to the commercial measurement technical field.
Background technology
Though be called spr sensor by custom, actual be the SPR testing tool of an optical, mechanical and electronic integration to surface plasma wave sensor [English Surface Plasmon Resonance sensor is called for short spr sensor].This instrument is mainly used in physics, chemistry and biological field about the membrane system The Characteristic Study.Especially in the biological membrane engineering, eucaryotic cell structure, the application in fields such as membrance chemistry has wide future.
The mechanism of spr sensor is P ripple resonance laser surface plasma wave, its reflection coefficient
Very responsive to refractive index near the excitating surface medium.Can determine change of refractive by measurement to the reflected light characteristic.Reflection coefficient
Be plural number, this represents that not only amplitude changes, and the phase place generation transition of reflection.The S ripple can not the excitating surface plasma ripple, and in interested scope, S wave reflection rate is approximately 1, and phase approximation is a constant.Common spr sensor incident wave only contains the P ripple, only utilizes the amplitude characteristic of P wave reflection coefficient, can be called the amplitude type spr sensor.1994, the applicant proposed, and adds the S ripple in incident wave, utilizes P ripple and S wave interference, had so just utilized the amplitude and the phase propetry of P wave reflection coefficient simultaneously, and this spr sensor can provide better resolution.Since 1999, this interferometric sensor had reported in literature successively abroad.Experiment has proved that all this sensor is better than amplitude type.Again this sensor was developed afterwards, and added modulation technique and weak signal detection technology, resolution is improved again, refractive index resolution can reach 1 * 10
-7And applied for that patent, application number are 98124488.2, the shortcoming of this technology is that working point direct current light intensity background is non-vanishing in theory, (if be zero, sensitivity also is zero).Because white noise is proportional to the evolution of direct current light intensity, thereby noise is also bigger.
Summary of the invention
The objective of the invention is to design a kind of phase-modulated polarized surface plasma wave sensor, making sensor is zero in place, working point direct current light intensity background in theory, thereby further improves the resolution of sensor.
The phase-modulated polarized surface plasma wave sensor of the present invention's design comprises laser instrument, the polarizer, sensing element, quarter wave plate, analyzer, photoelectric commutator, lock-in amplifier, computing machine and signal generator and magneto-optic modulator; The laser that is produced by laser instrument becomes linearly polarized light behind the polarizer, this linearly polarized light incides the light reflection surface in the sensing element, emergent light after the reflection becomes left-handed behind quarter wave plate and dextrorotation garden polarized light, the garden polarized light becomes linearly polarized light through analyzer, the analyzing face of rotation analyzer, to carry out phase compensation, this linearly polarized light is converted into electric signal through photoelectric commutator, this electric signal is imported computing machine behind lock-in amplifier, show measurement result, signal generator sends signal and gives magneto-optic modulator, and magneto-optic modulator is modulated the phase differential of P ripple and S ripple, import lock-in amplifier simultaneously, photoelectric conversion signal is carried out demodulation.
The another kind of structure of the phase-modulated polarized surface plasma wave sensor of the present invention's design comprises laser instrument, the polarizer, electrooptic modulator, sensing element, adjustable phase compensator, analyzer, photoelectric commutator, lock-in amplifier, computing machine and signal generator; The laser that is produced by laser instrument becomes linearly polarized light behind the polarizer, this linearly polarized light incides the light reflection surface in the sensing element, emergent light after the reflection is after the adjustable phase compensator carries out phase compensation, become linearly polarized light through analyzer again, this linearly polarized light is converted into electric signal through photoelectric commutator, this electric signal is imported computing machine behind lock-in amplifier, show measurement result, signal generator sends signal and gives electrooptic modulator, electrooptic modulator is modulated the phase differential of P ripple and S ripple, import lock-in amplifier simultaneously, photoelectric conversion signal is carried out demodulation.
The phase-modulated polarized surface plasma wave sensor that utilizes the present invention to design, by adjusting optical element, making it is zero in place, working point direct current light intensity background in theory, and by modulation, further improves the resolution of sensor.
Description of drawings
Fig. 1 is the prior art structural representation.
Fig. 2 and Fig. 3 are the structural representations of the phase-modulated polarized surface plasma wave sensor that designs of the present invention.
Among Fig. 1-Fig. 3, the 1st, laser instrument, the 2nd, the polarizer, the 3rd, magneto-optic modulator, the 4th, the surface plasma wave excitation apparatus is a sensing element, the 5th, quarter wave plate, the 6th, analyzer, the 7th, photoelectric commutator, the 8th, signal generator, the 9th, lock-in amplifier, the 10th, A/D converter, the 11st, computing machine, the 12nd, electrooptic modulator, the 13rd, adjustable phase compensator.
Embodiment
Shown in claim 2, the phase-modulated polarized surface plasma wave sensor of the present invention's design comprises laser instrument 1, the polarizer 2, sensing element 4, quarter wave plate 5, analyzer 6, photoelectric commutator 7, lock-in amplifier 9, computing machine and signal generator 8,11 and magneto-optic modulator 3.The laser that is produced by laser instrument 1 becomes linearly polarized light behind the polarizer, this linearly polarized light incides the light reflection surface in the sensing element 4, emergent light after the reflection becomes left-handed behind quarter wave plate 5 and dextrorotation garden polarized light, the garden polarized light becomes linearly polarized light through analyzer 6, the analyzing face of rotation analyzer 6, to carry out phase compensation, this linearly polarized light is converted into electric signal through photoelectric commutator 7, this electric signal is imported computing machine 11 behind lock-in amplifier 9, show measurement result.Signal generator 8 sends signal and gives magneto-optic modulator 3, and magneto-optic modulator is modulated the phase differential of P ripple and S ripple, imports lock-in amplifier 9 simultaneously, and photoelectric conversion signal is carried out demodulation.
The another kind of structure of the phase-modulated polarized surface plasma wave sensor of the present invention's design comprises laser instrument 1, the polarizer 2, electrooptic modulator 12, sensing element 4, adjustable phase compensator 13, analyzer 6, photoelectric commutator 7, lock-in amplifier 9, computing machine 11 and signal generator 8 as shown in Figure 3.The laser that is produced by laser instrument 1 becomes linearly polarized light behind the polarizer 2, this linearly polarized light incides the light reflection surface in the sensing element 4, emergent light after the reflection is after adjustable phase compensator 13 carries out phase compensation, become linearly polarized light through analyzer 6 again, this linearly polarized light is converted into electric signal through photoelectric commutator 7, this electric signal is imported computing machine behind lock-in amplifier 9, show measurement result.Signal generator 8 sends signal and gives electrooptic modulator 12, and electrooptic modulator is modulated the phase differential of P ripple and S ripple, imports lock-in amplifier 9 simultaneously, and photoelectric conversion signal is carried out demodulation.
The principle of work of sensor as shown in Figure 2 is as follows: the light that laser instrument sends becomes wide parallel light light beam through expanding beam system, becomes linearly polarized light through the polarizer 13, and incident light promptly contains P ripple E
pContain S ripple E again
sMade folk prescription to P ripple angle be α, then E
p, E
sWith α relation is arranged
E
s/ E
p=tg α P ripple excitating surface is the ion bulk wave, and its reflection coefficient is
,
It is refractive index function to be measured.The S ripple can not the excitating surface plasma ripple, and reflection coefficient is
Order
R wherein
sBe about 1,
sBe approximately a constant.Light by with P ripple quarter wave plate at 45 after, P ripple and S wavelength-division do not become left-handed and right-circularly polarized light.Magneto-optic modulator adds a modulation signal Msin Ω t to circularly polarized light, and wherein M is the phase modulation (PM) amplitude.Ω is a modulating frequency.Become same directional ray polarized light through analyzer 6, produce and interfere.If the angle of analyzer analyzing direction and P ripple is θ, then the light intensity signal of photelectric receiver 7 receptions is
Though following formula is complicated, physical significance is simple, and in the situation of θ=0 M=0, following formula is equivalent to E
sRipple and
Two wave interferences, order
p=
P0+ Δ
p wherein
P0Be the working point of selecting.When not adding modulation, be that zero condition is in the working point light intensity:
Can make by regulating the polarizer 2 like this
Tg α=r
p4.1 formulas are met.By transferring analyzer 6 that 4.2 formulas are met.The direct current light intensity is zero in theory when being implemented in the working point and not modulating.
When 4.1 formulas and 4.2 formulas all are met,
I=2r
pE
sE
p[1-cos (Δ
p+ Msin Ω t)] (5) are because M and Δ
pAll be small quantity, (5) formula is launched with platform labor formula:
I＝r
pE
sE
p[Δ
p 2+M
2sin
2Ωt] (6)
+2r
pE
sE
pΔ
pMsinΩt
(6) first of formula contains the direct current background, but it is a second order a small amount of, more much smaller than the scheme that previous patent is given.Second for frequency be Ω signal, it is proportional to Δ
pAnd M.Can be with lock-in amplifier with Δ
pDetect.Refractive index detection resolution
With prior art relatively, this scheme debugging is also more convenient.
Optical system shown in Figure 2 is one embodiment of the present of invention.Wherein laser instrument selects the He-Ne laser instrument, and power 1.5-3mw gets final product, single transverse mode.Polarizer analyzer just can with the absorbing sheet polarizer.Magneto-optic modulator can with common faraday modulator or our the open magneto-optic modulator of design.Photoelectricity gets final product with the PIN pipe by receiving device.Signal generator and lock-in amplifier, computing machine all have product.
Fig. 3 provides another structure.In the scheme of Fig. 3, replaced magneto-optic modulator with electrooptic modulator.Merit attention to such an extent that be: electrooptic modulator is to linearly polarized light modulation, so should modulate when P ripple and S ripple are linear polarization.
In the surface plasma wave excitation apparatus of the present invention, be zero though golden film thickness can satisfy place, working point direct current light intensity background in very wide scope, it is proper to advise that golden film thickness is got 40-45nm.
At any place of resonance excitation surface plasma wave SPR spectrum, though can be elected to be the working point, making the direct current light intensity is zero in theory.But the suggestion working point is selected in r
PminThe place, or as close as possible.
The adjustment method following (at Fig. 2) of the sensor of the present invention's design:
1, rotate the polarizer, make α=0, this moment, instrument was equivalent to the amplitude type spr sensor, changed incident angle, found r
PminThe position and write down size.
2, rotating the polarizer makes
3, do not add modulation signal, rotate the position that analyzer 6 finds direct current light intensity minimum.
4, the fine setting polarizer.Further find the position of direct current light intensity minimum.At this moment the size of direct current should be zero in theory.In fact can reach 1 * 10 of incident intensity
-3Below.
5, add modulation, start working.
Carrying out phase compensation with other method, also to satisfy working point direct current light intensity be zero in theory, do not influence this programme and implement.With other method the phase differential of P ripple and S ripple is modulated the enforcement that does not influence this programme.
Claims (2)
1, a kind of phase-modulated polarized surface plasma wave sensor is characterized in that this sensor comprises laser instrument, the polarizer, sensing element, quarter wave plate, analyzer, photoelectric commutator, lock-in amplifier, computing machine and signal generator and magneto-optic modulator; The laser that is produced by laser instrument becomes linearly polarized light behind the polarizer, this linearly polarized light incides the light reflection surface in the sensing element, emergent light after the reflection becomes left-handed behind quarter wave plate and dextrorotation garden polarized light, the garden polarized light becomes linearly polarized light through analyzer, the analyzing face of rotation analyzer, to carry out phase compensation, this linearly polarized light is converted into electric signal through photoelectric commutator, this electric signal is imported computing machine behind lock-in amplifier, show measurement result, signal generator sends signal and gives magneto-optic modulator, and magneto-optic modulator is modulated the phase differential of P ripple and S ripple, import lock-in amplifier simultaneously, photoelectric conversion signal is carried out demodulation.
2, a kind of phase-modulated polarized surface plasma wave sensor is characterized in that this sensor comprises laser instrument, the polarizer, electrooptic modulator, sensing element, adjustable phase compensator, analyzer, photoelectric commutator, lock-in amplifier, computing machine and signal generator; The laser that is produced by laser instrument becomes linearly polarized light behind the polarizer, this linearly polarized light incides the light reflection surface in the sensing element, emergent light after the reflection is after the adjustable phase compensator carries out phase compensation, become linearly polarized light through analyzer again, this linearly polarized light is converted into electric signal through photoelectric commutator, this electric signal is imported computing machine behind lock-in amplifier, show measurement result, signal generator sends signal and gives electrooptic modulator, electrooptic modulator is modulated the phase differential of P ripple and S ripple, import lock-in amplifier simultaneously, photoelectric conversion signal is carried out demodulation.
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|---|---|---|---|
| CNB011366680A CN1139799C (en) | 2001-10-26 | 2001-10-26 | Phase-modulated polarized surface plasma wave sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011366680A CN1139799C (en) | 2001-10-26 | 2001-10-26 | Phase-modulated polarized surface plasma wave sensor |
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| CN1139799C CN1139799C (en) | 2004-02-25 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007082473A1 (en) * | 2006-01-19 | 2007-07-26 | The Chinese University Of Hong Kong | Surface plasmon resonance sensors and methods for detecting samples using the same |
| US7623246B2 (en) | 2005-07-08 | 2009-11-24 | The Chinese University Of Hong Kong | Optical sensing devices with SPR sensors based on differential phase interrogation and measuring method using the same |
| CN101398378B (en) * | 2008-01-28 | 2011-06-15 | 国家纳米科学中心 | Phase measurement method of surface plasma resonance and measuring system thereof |
| CN105467611A (en) * | 2015-12-30 | 2016-04-06 | 中国科学院西安光学精密机械研究所 | Weak light signal reconstruction device based on surface plasmon bistable state |
-
2001
- 2001-10-26 CN CNB011366680A patent/CN1139799C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7623246B2 (en) | 2005-07-08 | 2009-11-24 | The Chinese University Of Hong Kong | Optical sensing devices with SPR sensors based on differential phase interrogation and measuring method using the same |
| WO2007082473A1 (en) * | 2006-01-19 | 2007-07-26 | The Chinese University Of Hong Kong | Surface plasmon resonance sensors and methods for detecting samples using the same |
| US7407817B2 (en) | 2006-01-19 | 2008-08-05 | The Chinese University Of Hong Kong | Surface plasmon resonance sensors and method for detecting samples using the same |
| CN101371129B (en) * | 2006-01-19 | 2010-12-22 | 香港中文大学 | Surface plasmon resonance sensors and methods for detecting samples using the same |
| US7892855B2 (en) | 2006-01-19 | 2011-02-22 | The Chinese University Of Hong Kong | Surface plasmon resonance sensors and methods for detecting samples using the same |
| CN101398378B (en) * | 2008-01-28 | 2011-06-15 | 国家纳米科学中心 | Phase measurement method of surface plasma resonance and measuring system thereof |
| CN105467611A (en) * | 2015-12-30 | 2016-04-06 | 中国科学院西安光学精密机械研究所 | Weak light signal reconstruction device based on surface plasmon bistable state |
| CN105467611B (en) * | 2015-12-30 | 2017-12-19 | 中国科学院西安光学精密机械研究所 | Based on the bistable low light signals reconstruct device of surface plasma |
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|---|---|
| CN1139799C (en) | 2004-02-25 |
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