CN1342885A - Angle-modulated polarized surface plasma wave sensor - Google Patents
Angle-modulated polarized surface plasma wave sensor Download PDFInfo
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- CN1342885A CN1342885A CN 01136670 CN01136670A CN1342885A CN 1342885 A CN1342885 A CN 1342885A CN 01136670 CN01136670 CN 01136670 CN 01136670 A CN01136670 A CN 01136670A CN 1342885 A CN1342885 A CN 1342885A
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Abstract
An angle-modulated polarized surface plasma sensor is disclosed. The laser beam from laser device is converted to linear polarized light by polarizer, and then going to the reflaction surface of sensing part. The reflected light is converted to left-hand turning and right-hand turning circular polarized beams by 1/4 wave plate, here the lights are then covnerted to linear polarized beam by analyzer. After the linear polarized beams are converted to electric signals, with the beams phase-locked and amplified, it is outputted to computer to display result. The signal generator sends signal to angle modulator for modulating the incident angle of the incident light at trigger. Its advantages are low white noise and high resolution.
Description
Technical field
The present invention relates to a kind of angle-modulated polarized surface plasma wave sensor, belong to the industrial test technical field.
Background technology
Though be called spr sensor by custom, actual be the SPR testing tool of an optical, mechanical and electronic integration to surface plasma wave sensor [English Surface Plasmon Resonance sensor is called for short spr sensor].This instrument is mainly used in physics, chemistry and biological field about the membrane system The Characteristic Study.Especially in the biological membrane engineering, eucaryotic cell structure, the application in fields such as membrance chemistry has wide future.
The mechanism of spr sensor is P ripple resonance laser surface plasma wave, its reflection coefficient
Very responsive to refractive index near the excitating surface medium.Can determine change of refractive by measurement to the reflected light characteristic.Reflection coefficient
Be plural number, this represents that not only amplitude changes, and the phase place generation transition of reflection.The S ripple can not the excitating surface plasma ripple, and in interested scope, S wave reflection rate is approximately 1, and phase approximation is a constant.Common spr sensor incident wave only contains the P ripple, only utilizes the amplitude characteristic of P wave reflection coefficient, can be called the amplitude type spr sensor.1994, the applicant proposed, and adds the S ripple in incident wave, utilizes P ripple and S wave interference, had so just utilized the amplitude and the phase propetry of P wave reflection coefficient simultaneously, and this spr sensor can provide better resolution.Since 1999, this interferometric sensor had reported in literature successively abroad.Experiment has proved that all this sensor is better than amplitude type.The applicant improved this sensor again afterwards, had added modulation technique and weak signal detection technology, and resolution is improved again, and refractive index resolution can reach 1 * 10
-7And applied for that patent, application number are 98124488.2, the shortcoming of this technology is that working point direct current light intensity background is non-vanishing in theory, (if be zero, sensitivity also is zero).Because white noise is proportional to the evolution of direct current light intensity, thereby the noise of sensor is also bigger.
Summary of the invention
The objective of the invention is to design a kind of angle-modulated polarized surface plasma wave sensor, making it is zero in place, working point direct current light intensity background in theory, thereby further improves the resolution of sensor.
Design point of view modulating polarization type surface plasma wave sensor of the present invention comprises laser instrument, the polarizer, sensing element, quarter wave plate, analyzer, photoelectric commutator, lock-in amplifier, computing machine and signal generator and angle modulator; The laser that is produced by laser instrument becomes linearly polarized light behind the polarizer, this linearly polarized light incides the light reflection surface in the sensing element, emergent light after the reflection becomes left-handed behind quarter wave plate and dextrorotation garden polarized light, the garden polarized light becomes linearly polarized light through analyzer, this linearly polarized light is converted into electric signal through photoelectric commutator, this electric signal is imported computing machine behind lock-in amplifier, show measurement result, signal generator sends signal, this signal input angle modulator, incident angle to the incident light that incides excitation apparatus is modulated, and imports lock-in amplifier simultaneously, and photoelectric conversion signal is carried out demodulation.
The sensor of the present invention's design, compared with the prior art, the present invention adopts angular modulation but not the magneto-optic modulation; In addition, the optical system that the present invention provides can be by regulating, and making working point direct current light intensity background is zero in theory, thereby has reduced the influence of white noise to measuring of optical system, can further improve the resolution of measurement.
Description of drawings
Fig. 1 is the prior art structural representation.
Fig. 2 is the structural representation of the sensor that designs of the present invention.
Among Fig. 1 and Fig. 2, the 1st, laser instrument, the 2nd, expand the light beam device, the 3rd, the polarizer, the 4th, the surface plasma wave excitation apparatus is a sensing element, the 5th, and quarter wave plate, the 6th, analyzer, the 8th, photoelectric commutator, the 9th, signal generator, the 10th, lock-in amplifier, the 11st, computing machine, the 12nd, angle modulator.
Embodiment
As shown in Figure 2, the Wavelength-modulated polarized surface plasma wave sensor of the present invention design comprises laser instrument 1, the polarizer 3, sensing element 4, quarter wave plate 5, analyzer 6, photoelectric commutator 8, lock-in amplifier 10, computing machine and signal generator 9 and 11 and angle modulator 12.The laser that is produced by laser instrument 1 becomes linearly polarized light behind the polarizer 3, this linearly polarized light incides the light reflection surface in the sensing element 4, emergent light after the reflection becomes left-handed behind quarter wave plate 5 and dextrorotation garden polarized light, the garden polarized light becomes linearly polarized light through analyzer, this linearly polarized light is converted into electric signal through photoelectric commutator 8, this electric signal is imported computing machine 11 behind lock-in amplifier 10, show measurement result, signal generator 9 sends signal, this signal input angle modulator 12, incident angle to the incident light that incides excitation apparatus 4 is modulated, and imports lock-in amplifier 10 simultaneously, and photoelectric conversion signal is carried out demodulation.
The principle of work of the sensor is as follows: laser becomes linearly polarized light through the polarizer 2, and incident light promptly contains P ripple E
pContain S ripple E again
sMade folk prescription to P ripple angle be α, then E
p, E
sWith α relation is arranged
E
s/E
p＝tgα
P ripple excitating surface is the ion bulk wave, and its reflection coefficient is
It is refractive index function to be measured.The S ripple can not the excitating surface plasma ripple, and reflection coefficient is
Order
R wherein
sBe about 1,
sBe approximately a constant.The Wavelength of Laser modulation is to realize by the electric current that changes semiconductor laser.If modulated amplitude is M ', modulating frequency Ω.In P wave reflection rate smallest point, this angular modulation is in fact only to
pPlay modulating action, be equivalent to phase modulation (PM).Its phase modulation (PM) amplitude size
α wherein
0Be resonance angle.Light by with P ripple quarter wave plate at 45 after, P ripple and S wavelength-division do not become left-handed and right-circularly polarized light.Become same directional ray polarized light through analyzer, produce and interfere.If the angle of analyzer analyzing direction and P ripple is θ, then photoelectricity by the light intensity signal of receiving the device reception is
Though following formula is complicated, physical significance is simple, and in the situation of θ=0 M=0, following formula is equivalent to E
sRipple and
Two wave interferences, order
p=
P0+ Δ
p wherein
P0Be the working point of selecting.When not adding modulation, be that zero condition is at working point I:
Can make by regulating the polarizer 2 like this
Tg α=r
p4.1 formulas are met.By transferring analyzer that 4.2 formulas are met.The direct current light intensity is zero in theory when being implemented in the working point and not modulating.
When 4.1 formulas and 4.2 formulas all are met,
I=2r
pE
sE
p[1-cos (Δ
p+ Msin Ω t)] (5) are because M and Δ
pAll be small quantity, (5) formula is launched with platform labor formula:
I＝r
pE
sE
p[Δ
p 2+M
2sin
2Ωt]
(6)
+2r
pE
sE
pΔ
pMsinΩt
(6) first of formula contains the direct current background, but it is a second order a small amount of, more much smaller than the scheme that previous patent is given.Second for frequency be Ω signal, it is proportional to Δ
pAnd M.Can be with lock-in amplifier with Δ
pDetect.Refractive index detection resolution
With prior art relatively, this scheme debugging is also more convenient.
Optical system shown in Figure 2 is an embodiment.Wherein laser instrument selects the He-Ne laser instrument, and power 1.5-3mw gets final product.Polarizer analyzer just can with the absorbing sheet polarizer.Photoelectricity gets final product with the PIN pipe by receiving device.Signal generator and lock-in amplifier, computing machine all have product, and angle modulator is made up of two piezoelectric ceramics.
In the sensor of the present invention, though on the sensing element light reflection surface golden film thickness can to satisfy working point place direct current light intensity background in very wide scope be zero in theory, it is proper to advise that golden film thickness is got 40-45nm.
At any place of resonance excitation surface plasma wave SPR spectrum, though can be elected to be the working point, making the direct current light intensity is zero in theory.But the suggestion working point is selected in r
PminThe place, or as close as possible.
The adjustment method of the sensor of the present invention's design is as follows:
1, rotate the polarizer, make α=0, this moment, instrument was equivalent to the amplitude type spr sensor, changed incident angle, found r
PminThe position and write down size.
2, rotate the polarizer, make as far as possible
3, do not add modulation signal, rotate the position that analyzer 6 finds direct current light intensity minimum.
4, the fine setting polarizer.Further find the position of direct current light intensity minimum.At this moment the size of direct current should be zero in theory.In fact can reach 1 * 10 of incident intensity
-3Below.
5, add modulation, start working.
Other angular modulation method does not influence this programme and implements.
With the method for other phase compensation, be zero in theory as long as satisfy working point direct current light intensity, do not influence this programme and implement.With the method for other angular modulation,, do not influence the enforcement of this programme as long as can modulate to the incident angle of the light excitation surface plasma ripple plane of incidence.
Claims (1)
1, a kind of angle-modulated polarized surface plasma wave sensor is characterized in that this sensor comprises laser instrument, the polarizer, sensing element, quarter wave plate, analyzer, photoelectric commutator, lock-in amplifier, computing machine and signal generator and angle modulator; The laser that is produced by laser instrument becomes linearly polarized light behind the polarizer, this linearly polarized light incides the light reflection surface in the sensing element, emergent light after the reflection becomes left-handed behind quarter wave plate and dextrorotation garden polarized light, the garden polarized light becomes linearly polarized light through analyzer, this linearly polarized light is converted into electric signal through photoelectric commutator, this electric signal is imported computing machine behind lock-in amplifier, show measurement result, signal generator sends signal, this signal input angle modulator, incident angle to the incident light that incides excitation apparatus is modulated, and imports lock-in amplifier simultaneously, and photoelectric conversion signal is carried out demodulation.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011366702A CN1158519C (en) | 2001-10-26 | 2001-10-26 | Angle-modulated polarized surface plasma wave sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011366702A CN1158519C (en) | 2001-10-26 | 2001-10-26 | Angle-modulated polarized surface plasma wave sensor |
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| Publication Number | Publication Date |
|---|---|
| CN1342885A true CN1342885A (en) | 2002-04-03 |
| CN1158519C CN1158519C (en) | 2004-07-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009070913A1 (en) * | 2007-11-29 | 2009-06-11 | National Center For Nanoscience And Technology, China | Measuring method for spr and system thereof |
| CN101865692A (en) * | 2010-05-31 | 2010-10-20 | 清华大学 | Polarization grating navigation sensor |
| CN101398378B (en) * | 2008-01-28 | 2011-06-15 | 国家纳米科学中心 | Phase measurement method of surface plasma resonance and measuring system thereof |
-
2001
- 2001-10-26 CN CNB011366702A patent/CN1158519C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009070913A1 (en) * | 2007-11-29 | 2009-06-11 | National Center For Nanoscience And Technology, China | Measuring method for spr and system thereof |
| CN101398378B (en) * | 2008-01-28 | 2011-06-15 | 国家纳米科学中心 | Phase measurement method of surface plasma resonance and measuring system thereof |
| CN101865692A (en) * | 2010-05-31 | 2010-10-20 | 清华大学 | Polarization grating navigation sensor |
| CN101865692B (en) * | 2010-05-31 | 2012-02-08 | 清华大学 | Polarization grating navigation sensor |
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| Publication number | Publication date |
|---|---|
| CN1158519C (en) | 2004-07-21 |
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