CN1331838A - Method for storing carrier for polishing wafer - Google Patents
Method for storing carrier for polishing wafer Download PDFInfo
- Publication number
- CN1331838A CN1331838A CN99814852A CN99814852A CN1331838A CN 1331838 A CN1331838 A CN 1331838A CN 99814852 A CN99814852 A CN 99814852A CN 99814852 A CN99814852 A CN 99814852A CN 1331838 A CN1331838 A CN 1331838A
- Authority
- CN
- China
- Prior art keywords
- carrier
- deionized water
- liquid
- wafer
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000005498 polishing Methods 0.000 title claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000008367 deionised water Substances 0.000 claims abstract description 24
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000003860 storage Methods 0.000 claims description 36
- 239000000203 mixture Substances 0.000 claims description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 11
- 238000001914 filtration Methods 0.000 claims description 10
- 239000004094 surface-active agent Substances 0.000 claims description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 7
- 239000000356 contaminant Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Prevention Of Fouling (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
provided is a method for storing a carrier (3) for polishing a silicon wafer, which can store the carrier (3) in a manner to reduce scratches on the silicon wafer. The method includes storing a carrier (3) for use in polishing a silicon wafer completely immersed in a liquid. At least a substantial portion of the liquid is deionized water.
Description
Background of invention
The present invention relates to be used for the storage means of the carrier of polished silicon wafer.In some glossing, two surfaces of wafer are polished simultaneously.
In recent years, people pay close attention to the polished silicon wafer, particularly two surface are polished simultaneously.But, also have the serious problems that produce cut in the polishing process on the silicon wafer.
The main cause that forms this cut comes from the pin sleeve of carrier and driving carrier.This carrier and pin sleeve are disclosed in Japanese patent application 8-096166.These parts have been proposed to improve, so that reduce the incidence of cut.
But, along with this improved proposition, the specification requirement of the cut that can allow be restricted to seldom can reach allowance with less.So, need more to improve, carrier is required stricter control.
Carrier has been stored in the drying condition so far, and for example as shown in Figure 3, wherein carrier 3 flatly is placed on a plurality of carrier setters 2, and setter is arranged on the roller 4 of carrier storeroom.
Have been found that because this dry-storage the cut that lasting generation can not tolerance level.And, the number of times that the cut quantity on the silicon wafer is used in glossing along with carrier and increasing.Be sure of that cut is that contaminant by ground slurry residual on the carrier for example causes that when replacing with the carrier of storage, contaminant is involved in the silicon wafer that polishes.Contaminant also may be to go into owing to using brand-new carrier.
Consider the problems referred to above, the object of the present invention is to provide a kind of storage means of wafer polishing carrier, the storage mode of this carrier can reduce the cut on the silicon wafer, and these cuts are at the polished silicon wafer, particularly polish simultaneously in two surperficial process and produce.
Summary of the invention
The invention provides a kind of few silicon wafer polishing method that on wafer, produces cut; This method that adopts chip carrier is provided, can be used in and need not the obviously existing polissoir of change; Providing can the economic method of using; The method of the wafer polishing technology of polished wafer both sides simultaneously that can be used in is provided.
The invention provides the storage means of the used carrier of polished silicon wafer.This method was included in the wafer polishing operation before wafer uses, and carrier is immersed in the liquid that contains deionized water is fully stored.
Can understand other purpose and feature by following explanation.
Brief description of drawings
Fig. 1 is a schematic diagram of showing the method embodiment of memory carrier of the present invention.
Fig. 2 is a schematic diagram of showing another embodiment of method of memory carrier of the present invention.
Fig. 3 is a schematic diagram of showing the conventional method embodiment of memory carrier.
Fig. 4 is a curve chart of showing correlation between polishing number of times and the cut incidence.
In a few width of cloth accompanying drawings, the corresponding reference mark is represented corresponding part.
DETAILED DESCRIPTION OF THE PREFERRED
The invention provides a kind of storage means of the carrier that during the silicon wafer polishing operation of glossing, uses.Best two surfaces of polished wafer simultaneously.This method is included in before the polishing process, carrier is immersed fully be stored in the storage liquid, and storage liquid for example is deionized water or the mixed liquor that comprises deionized water.
During carrier storage, storage liquid is preferably in about 20 ℃～about 80 ℃ temperature range.Preferably storage liquid being carried out filtration cycle during carrier storage purifies.But can predict, except during the carrier storage or during the replacement carrier storage, can be to the other filtered several times of storage liquid.
According to the present invention, the storage means of the used carrier in two surfaces of a kind of while polished silicon wafer is provided, it is characterized in that carrier is immersed to be stored in fully store in the liquid, storage liquid comprises mixed liquor, also comprises one or more liquid that contain dissolved solid.The main component of storage liquid is a deionized water.
Be preferably in and add following composition in the deionized water, obtain liquid mixture, the addition of pressing deionized water weight is as follows:
Surfactant (0.1-5wt%);
Ammoniacal liquor and hydrogen peroxide; With
Surfactant (0.1-5wt%+ ammoniacal liquor and hydrogen peroxide).
Surfactant can be a soluble solids.
Among the present invention, storage liquid preferably has the pH value of 7-12.And, preferably storage liquid is carried out filtration cycle and purify.
In the method for the invention, carrier and the brush that cleans the abrasive polishing dish are stored in carrier and brush immerses under the condition of storage liquid fully.
As mentioned above, in carrier storage method of the present invention, carrier immerses fully and is stored in the storage liquid.Therefore, because carrier can isolate with contaminant, so can in clean conditions, store and from store, take out carrier.In addition, even owing to contaminant preferably is not difficult for sticking on the carrier by the contamination contaminant at dry on the carrier and carrier at first yet, thereby be easy to wash off the contaminant on the carrier.Therefore, the contaminant that can cause cut in polishing process is reduced.
Method of the present invention not only can be applied to the above-mentioned carrier that is used to polish, but also can be applied to clean the used brush of abrasive polishing dish.
The used deionized water of the present invention preferably makes the refining ultrapure deionized water of electricity consumption recuperative ion-exchanger, is used in combination ion exchange resin and amberplex in the ion-exchanger, or the deionized water made from extra care with inverse osmosis equipment.
Liquid mixture of the present invention preferably prepares by interpolation surfactant in the gained mixture, and addition is the 0.1-5wt% (not having any water) of deionized water.
Can give the effect of cleaning the contaminant (particularly particle) that is attached to carrier to storage liquid like this, remove by filtering then.Usually, ammoniacal liquor: aqueous hydrogen peroxide solution: the volume ratio of deionized water is controlled in 1: 1: 10～1: 1: 200 the approximate range.
The spendable surfactant of the present invention is selected from cationic surfactant, anion surfactant, non-ionic surface active agent and amphoteric surfactant.For removing contaminant preferred nonionic surfactants and amphoteric surfactant.
Then, describe carrier storage method of the present invention in detail.
Fig. 1 is a schematic diagram of showing the embodiment of carrier storage method of the present invention.
As shown in Figure 1, the container 13 of memory carrier is filled with storage liquid, preferably filtration, purification first.
Use circulating pump 9 from being arranged on the water sucking mouth 11 of container 13 bottoms, introduce above-mentioned deionized water of part or liquid mixture (storage liquid) to filter 10, by filter 10 filtration, purifications, offer container 13 continuously by the feed water inlet 12 that is arranged on container 13 tops.
As filter 10, preferably use the filter of 0.05-1.0 μ m filtration coefficient.
As mentioned above, owing to fully removed deionized water or liquid mixture circulation constantly in container of contaminant particle, even so at replacement vector in container or remove from container in the process of carrier and introduced particle, can not cause particle to be attached to carrier basically to container yet.Carrier should be placed in the container before the drying after using, and helps to remove particle from carrier.Because particle is not done,,, before using or reusing carrier, also can easily wash from carrier even particle is attached to carrier so they are not easy to be attached to carrier.
Preferably use mechanical arm 5 for example shown in Figure 1 from the container of memory carrier, to take out carrier or carrier is put into container.
Hanging wire 16 has preferably that the material of low dust characteristic makes.For example, nylon etc. can be applicable to this material.
For the container 13 of memory carrier, the open top of common airtight container 13 prevents that the particle in the ambiance from entering container 13 during memory carrier.Container 13 preferably is arranged in the environment that purifies air, for example in the clean room.
Illustrate in greater detail the present invention according to embodiment below.But the present invention is not limited to these embodiment.
Adopting light intensity is 10
5The directional light of Lux carries out perusal to silicon wafer in the darkroom, determine observed cut as the cut that contaminant causes, obtain each silicon wafer the cut incidence (counting/sl).
Use container 13 shown in Figure 1, memory carrier 3 makes in its deionized water that immerses 40 ℃ of temperature fully, simultaneously by filter 10 (filters of 1.0 μ m filtration coefficients) circularly purifying deionized water.
Then, adopt above-mentioned carrier simultaneously (mode usually) to be polished on two surfaces of silicon wafer several times.
To the polishing process number of times of wafer and the correlation between the cut incidence as shown in Figure 4.
Use container 13 shown in Figure 1, memory carrier 3 makes it immerse 40 ℃ of temperature and pH value fully and is about in 10 the liquid mixture, simultaneously by filter 10 (filters of 1.0 μ m filtration coefficients) circularly purifying mixing material.
The L-64 (BASF manufacturing) that adds 0.5wt% in deionized water is as surfactant, and 30% ammoniacal liquor of 0.5wt% and 30% aqueous hydrogen peroxide solution of 0.5wt% (based on the deionized water total weight in the gained mixture) prepare liquid mixture.
Then, adopt above-mentioned carrier simultaneously (mode usually) to be polished on two surfaces of silicon wafer several times.
To the polishing process number of times of wafer and the correlation between the cut incidence as shown in Figure 4.
Adopt container 1 memory carrier 3 under drying condition that is used for memory carrier shown in Figure 3.
Adopt this carrier simultaneously (mode usually) to be polished on two surfaces of silicon wafer several times.
To the polishing process number of times of wafer and the correlation between the cut incidence as shown in Figure 4.
As shown in Figure 4, compare with Comparative Examples, embodiment 1 and 2 silicon wafer cut incidence reduce.
And in embodiment 2, compare with the situation of only using deionized water, by adding surfactant, ammoniacal liquor and aqueous hydrogen peroxide solution, the cut incidence of silicon wafer reduces a lot.
As seen from the above description, according to the present invention, carrier can be stored under the purification condition, can keep the cut of silicon wafer in the process that two surfaces of silicon wafer are polished simultaneously.
When introducing the key element of the present invention or its preferred embodiment, the meaning of project " ", " being somebody's turn to do " and " described " has been meant one or more key elements.Term " comprises " and " having " meaning is meant and is included in interior and also has other key element except listed key element.
Owing under the condition that does not break away from the scope of the invention, can make various variations to above-mentioned formation, so that full content that above-mentioned explanation comprised or shown in the drawings all should be interpreted as is exemplary, hard-core implication.
Claims (13)
1. the storage means of a polished silicon wafer used carrier is characterized in that, before wafer uses, described carrier immersed fully is stored in the liquid that contains deionized water in the wafer polishing operation.
2. according to the method for claim 1, it is characterized in that the temperature of described liquid is in about 20 ℃～80 ℃ scope.
3. according to the method for claim 2, it is characterized in that, described liquid is carried out filtration cycle purify.
4. according to the method for claim 3, it is characterized in that described liquid all is deionized water basically.
5. according to the method for claim 4, it is characterized in that, two surfaces of described wafer are polished simultaneously.
6. according to the method for claim 1, it is characterized in that described liquid is to contain the mixture of deionized water as its essential part.
7. according to the method for claim 6, it is characterized in that described mixture comprises surfactant, the scope of about 0.1-5% of the deionized water total weight of its content in mixture.
8. according to the method for claim 6, it is characterized in that described mixture comprises ammoniacal liquor and hydrogen peroxide.
9. according to the method for claim 6, it is characterized in that described mixture comprises ammoniacal liquor, hydrogen peroxide and surfactant, the scope of about 0.1-5% of the deionized water total weight of content in mixture.
10. method according to Claim 8 is characterized in that, the pH value of described mixture is 7-12 approximately.
11. the method according to claim 9 is characterized in that, the pH value of described mixture is 7-12 approximately.
12. the method according to claim 6 is characterized in that, the temperature of described mixture is in about 20 ℃-80 ℃ scope.
13. the method according to claim 12 is characterized in that, described mixture is carried out filtration cycle purify.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36687398A JP2000190208A (en) | 1998-12-24 | 1998-12-24 | Storing method for polishing carrier |
| JP366873/1998 | 1998-12-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1331838A true CN1331838A (en) | 2002-01-16 |
Family
ID=18487905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99814852A Pending CN1331838A (en) | 1998-12-24 | 1999-12-08 | Method for storing carrier for polishing wafer |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1142003A1 (en) |
| JP (1) | JP2000190208A (en) |
| KR (1) | KR20010080964A (en) |
| CN (1) | CN1331838A (en) |
| MY (1) | MY130885A (en) |
| TW (1) | TW439137B (en) |
| WO (1) | WO2000039841A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101797717B (en) * | 2009-02-10 | 2011-12-07 | 和舰科技(苏州)有限公司 | Device and method for detecting upper/lower positions of sink of chemical machinery grinding machine |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10060697B4 (en) | 2000-12-07 | 2005-10-06 | Siltronic Ag | Double-sided polishing method with reduced scratch rate and apparatus for carrying out the method |
| JP6977657B2 (en) * | 2018-05-08 | 2021-12-08 | 信越半導体株式会社 | How to store carriers for double-sided polishing equipment and how to polish double-sided wafers |
| JP7349352B2 (en) * | 2019-12-27 | 2023-09-22 | グローバルウェーハズ・ジャパン株式会社 | Silicon wafer polishing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06226618A (en) * | 1993-01-27 | 1994-08-16 | Hitachi Cable Ltd | Semiconductor wafer polishing method |
| US5520205A (en) * | 1994-07-01 | 1996-05-28 | Texas Instruments Incorporated | Apparatus for wafer cleaning with rotation |
| JP2832171B2 (en) * | 1995-04-28 | 1998-12-02 | 信越半導体株式会社 | Apparatus and method for cleaning semiconductor substrate |
| US6045624A (en) * | 1996-09-27 | 2000-04-04 | Tokyo Electron Limited | Apparatus for and method of cleaning objects to be processed |
-
1998
- 1998-12-24 JP JP36687398A patent/JP2000190208A/en not_active Withdrawn
-
1999
- 1999-12-08 KR KR1020017005828A patent/KR20010080964A/en not_active Application Discontinuation
- 1999-12-08 CN CN99814852A patent/CN1331838A/en active Pending
- 1999-12-08 EP EP99964166A patent/EP1142003A1/en not_active Withdrawn
- 1999-12-08 WO PCT/US1999/029078 patent/WO2000039841A1/en not_active Application Discontinuation
- 1999-12-23 MY MYPI99005694A patent/MY130885A/en unknown
- 1999-12-24 TW TW088122945A patent/TW439137B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101797717B (en) * | 2009-02-10 | 2011-12-07 | 和舰科技(苏州)有限公司 | Device and method for detecting upper/lower positions of sink of chemical machinery grinding machine |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010080964A (en) | 2001-08-25 |
| EP1142003A1 (en) | 2001-10-10 |
| TW439137B (en) | 2001-06-07 |
| WO2000039841A1 (en) | 2000-07-06 |
| MY130885A (en) | 2007-07-31 |
| JP2000190208A (en) | 2000-07-11 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| C10 | Entry into substantive examination | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |