CN1331165C - Chip type macromolecule PTC thermistor - Google Patents
Chip type macromolecule PTC thermistor Download PDFInfo
- Publication number
- CN1331165C CN1331165C CNB03116241XA CN03116241A CN1331165C CN 1331165 C CN1331165 C CN 1331165C CN B03116241X A CNB03116241X A CN B03116241XA CN 03116241 A CN03116241 A CN 03116241A CN 1331165 C CN1331165 C CN 1331165C
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- CN
- China
- Prior art keywords
- lead
- ptc thermistor
- high molecular
- chip type
- composite sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229920002521 macromolecule Polymers 0.000 title abstract 4
- 239000002131 composite material Substances 0.000 claims abstract description 20
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- 239000012212 insulator Substances 0.000 claims abstract description 4
- 238000000465 moulding Methods 0.000 claims description 15
- -1 polyethylene Polymers 0.000 claims description 7
- 239000011231 conductive filler Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 12
- 230000032683 aging Effects 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 238000004891 communication Methods 0.000 abstract description 3
- 239000011162 core material Substances 0.000 abstract 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000007634 remodeling Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- Thermistors And Varistors (AREA)
Abstract
The invention relates to a chip type macromolecule PTC thermistor, belonging to an electrical element, which is widely applied in a plurality of fields such as communication, computers, automobiles, industrial control, electronics and the like. A chip type macromolecule PTC thermistor comprises a lead wire, two layers and more than two layers of composite sheets, wherein the composite sheets are composed of a macromolecule positive temperature coefficient polymer core material and electrode sheets compounded on the upper surface and the lower surface of the core material; the leads include inner leads connected to the composite sheets, and outer leads extending from the inner leads, wherein insulators are bonded between the composite sheets, and portions other than the outer leads are encapsulated by a mold. The requirement of surface mounting is met through the outer lead, meanwhile, the short circuit phenomenon during product welding is prevented through the encapsulating structure, the environmental aging performance is improved, and the non-uniformity of resistance after welding and the tombstoning phenomenon after welding are avoided.
Description
Technical field
The present invention relates to a kind of chip type high molecular PTC thermistor, relate to a kind of electric elements, be widely used in the various fields such as communication, computer, automobile, Industry Control, electronics.
Background technology
High molecular PTC (positive temperature coefficient) thermistor has been widely applied to the line protection in the various fields such as communication, computer, automobile, Industry Control, electronics.In high-density line design and making, often need reach surface-pasted requirement installing, therefore, the high molecular PTC temperature-sensitive element has been designed to multi-form surface labeling type electronic element.Present thermal resistor for surface paste is generally made by the technology of printed wiring board, has following shortcoming:
1) the power-on and power-off pole piece of thermal resistor for surface paste exposes outside and apart from closer, causes the short circuit phenomenon easily when welding;
2) the high molecular PTC core is not encapsulated, and anti-environmental aging performance is poor than packaged products.
3) element radiating is too fast, to such an extent as to be subject to the influence of circuit width, thickness etc. on surrounding environment such as the printed circuit board, and directly be reflected on the resistance variations of element.
4) because the high molecular PTC core is different with the thermal coefficient of expansion of metal electrode film, and it is inhomogeneous to occur material stress in welding process easily, and the phenomenon that causes electrode slice to be peeled off.
5) because surface mount and the size of two welding endss low weight with thermistor, zinc-plated thickness are difficult to accomplish absolute unanimity that both sides stress there are differences and causes " the postwelding element erects upright stone tablet " phenomenon in welding process.
Summary of the invention
The object of the present invention is to provide the entrapped single or multiple lift chip type of a kind of high molecular PTC core high molecular PTC thermistor, to overcome the defective that above-mentioned prior art exists.
Purpose of the present invention can be achieved through the following technical solutions: a kind of chip type high molecular PTC thermistor, comprise lead-in wire and two layers or more composite sheet, described composite sheet is by high molecular positive temperature coefficient polymer core and to be compounded in the electrode pad set of this core upper and lower surface synthetic; Described lead-in wire comprises lead and the outer lead that is extended by lead, and lead is connected on the composite sheet, wherein, is bonded with insulator between each layer composite sheet, and the part except that outer lead is sealed by a moulding bodies.Because of the power-on and power-off pole piece of the present invention's thermistor encapsulated, the phenomenon that short circuit can not occur welding; And the performance of the anti-environmental aging of product is improved; This encapsulating structure makes element not be subject to the influence of surrounding environment, improves its tolerance to environmental factor; Core and metal electrode film are not prone to the phenomenon of peeling off.
In order to make encapsulating process simple, easy to operate, encapsulating structure is a moulding bodies.Moulding bodies adopts thermoplasticity or thermosetting resin, seals the part except that outer lead.
Wherein, described chip is scattered in to suppress on the positive temperature coefficient polymer that polymer forms by conductive filler and forms, and wherein, polymer is a kind of in polyethylene, polypropylene, the poly-fluorine alkene, or wherein two or three mixture or copolymer.
Described conductive filler is the mixture of metallic, carbon black or previous materials.
Described electric conduction electrode-plate is selected from the paillon foil of a kind of or its alloy in copper, nickel, the gold, silver.
Superiority of the present invention is: realized surface-pasted requirement by outer lead, when preventing the product welding by encapsulating structure simultaneously the short circuit phenomenon taken place, improved the environmental aging performance, avoided the inhomogeneities and the postwelding of welding back resistance to erect the upright stone tablet phenomenon.
Realize process of the present invention below in conjunction with description of drawings.
Description of drawings
Fig. 1 is the longitudinal sectional view before the single layer of chips formula high molecular PTC thermistor molding of the present invention.
Fig. 2 is the longitudinal sectional view of single layer of chips formula high molecular PTC thermistor of the present invention.
Fig. 3 is the longitudinal sectional view before the multilayer chiop formula high molecular PTC thermistor molding of the present invention.
Fig. 4 is the longitudinal sectional view of multilayer chiop formula high molecular PTC thermistor of the present invention.
Embodiment
At first, longitudinal sectional view with reference to the longitudinal sectional view before Fig. 1 single layer of chips formula of the present invention high molecular PTC thermistor molding and Fig. 2 single layer of chips formula of the present invention high molecular PTC thermistor, by among the figure as can be known, a kind of chip type high molecular PTC thermistor comprises: composite sheet 1, lead 2,3, outer lead 4,5, molding 6.Present embodiment composite sheet 1 is formed by having the conductive metal electrode sheet that conductive filler is scattered in the positive temperature coefficient polymer chip that polymer forms and is compounded in its two sides.The high molecular positive temperature coefficient polymer that is applicable to present embodiment is polyethylene, polyacrylic blend.Conductive filler has comprised the mixture of metallic, carbon black.The conductive metal electrode sheet is selected from the paillon foil of copper, nickel alloy.
Above-mentioned lead-in wire comprises the lead 2,3 that is welded on the composite sheet two sides and from lead 2 extended outer leads 4 with from lead 3 extended outer leads 5.
The present invention is owing to realized surface-pasted requirement by outer lead, sealed core by the moulding bodies molding simultaneously and realized sealing, when preventing the product welding short circuit phenomenon taken place, improved the environmental aging performance, avoided the inhomogeneities and the postwelding of welding back resistance to erect the upright stone tablet phenomenon.
Longitudinal sectional view with reference to the longitudinal sectional view before Fig. 3 multilayer chiop formula high molecular PTC thermistor molding and Fig. 4 multilayer chiop formula high molecular PTC thermistor, on the basis of embodiment 1, increase wherein the composite sheet number of plies to two layer, form the PTC themistor parallel-connection structure, reach multilayer chiop formula high molecular PTC thermistor.Connection on wherein each composite sheet parallel connection reaches electrically by lead 2,3a, 3b, bonding between two composite sheet with double-sided adhesive insulator 7.Lead 2 extends outer lead 4, and outer lead 5 is extended after connecting in lead 3a, 3b end.Composite sheet 1a, 1b and lead 2,3a, 3b with moulding resin molding together, are only exposed outer lead 4,5.
Also have various remodeling and variation in structure of the present invention without departing from the spirit and scope of the present invention, but these remodeling and variation all should belong to the scope of protection of present invention.
Claims (4)
1. chip type high molecular PTC thermistor comprises lead-in wire and the composite sheet more than two layers, and described composite sheet is synthesized by high molecular positive temperature coefficient polymer core and the electrode pad set that is compounded in this core upper and lower surface; Described lead-in wire comprises lead and the outer lead that is extended by lead, and lead is connected on the composite sheet, it is characterized in that: be bonded with insulator between each layer composite sheet, the part except that outer lead is sealed by a moulding bodies.
2. chip type high molecular PTC thermistor according to claim 1, it is characterized in that: described core is scattered in the positive temperature coefficient polymer compacting that polymer forms by conductive filler and forms, wherein, polymer is a kind of in polyethylene, polypropylene, the poly-fluorine alkene or wherein two or three mixture or copolymer.
3. chip type high molecular PTC thermistor according to claim 2 is characterized in that described conductive filler is the mixture of metallic, carbon black or previous materials.
4. chip type high molecular PTC thermistor according to claim 1 is characterized in that described electric conduction electrode-plate is selected from the paillon foil of a kind of or its alloy in copper, nickel, the gold, silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03116241XA CN1331165C (en) | 2003-04-08 | 2003-04-08 | Chip type macromolecule PTC thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB03116241XA CN1331165C (en) | 2003-04-08 | 2003-04-08 | Chip type macromolecule PTC thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1447352A CN1447352A (en) | 2003-10-08 |
| CN1331165C true CN1331165C (en) | 2007-08-08 |
Family
ID=28050518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB03116241XA Expired - Fee Related CN1331165C (en) | 2003-04-08 | 2003-04-08 | Chip type macromolecule PTC thermistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1331165C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4530169B2 (en) | 2005-12-09 | 2010-08-25 | Ｔｄｋ株式会社 | THERMISTOR DEVICE AND METHOD FOR MANUFACTURING THERMISTOR DEVICE |
| CN109275212B (en) * | 2018-10-29 | 2021-07-13 | 华东理工大学 | Electrothermal film with PTC effect and preparation method thereof |
| CN112880854A (en) * | 2021-01-13 | 2021-06-01 | 深圳市汇北川电子技术有限公司 | Use sensor that temperature detected on-vehicle power battery FPC |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0953992A1 (en) * | 1995-08-15 | 1999-11-03 | Bourns Multifuse (Hong Kong), Ltd. | Surface mount conductive polymer devices and methods for manufacturing such devices |
| CN1254932A (en) * | 1998-11-19 | 2000-05-31 | 上海维安热电材料有限公司 | Low-resistance thermosensitive resistor and its making method |
-
2003
- 2003-04-08 CN CNB03116241XA patent/CN1331165C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0953992A1 (en) * | 1995-08-15 | 1999-11-03 | Bourns Multifuse (Hong Kong), Ltd. | Surface mount conductive polymer devices and methods for manufacturing such devices |
| CN1254932A (en) * | 1998-11-19 | 2000-05-31 | 上海维安热电材料有限公司 | Low-resistance thermosensitive resistor and its making method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1447352A (en) | 2003-10-08 |
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| C06 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHANGHAI CHANGYUAN WEIAN ELECTRONIC LINE PROTECTIO Free format text: FORMER NAME OR ADDRESS: WEIAN THERMOELECTRIC MATERIAL CO LTD, SHANGHAI |
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| CP03 | Change of name, title or address |
Address after: Shanghai City, Siping Road No. 710 715Z Patentee after: Shanghai Changyuan Wayon Circuit Protection Co., Ltd. Address before: Room 201, Xinqiao 401, Shanghai, Pudong Patentee before: Weian Thermoelectrical Materials Co., Ltd., Shanghai |
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| C56 | Change in the name or address of the patentee |
Owner name: SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO., L Free format text: FORMER NAME: SHANGHAI CHANGYUAN WEIAN ELECTRONIC LINE PROTECTION CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: 200092, Siping Road, Shanghai, No. 710, 715-Z Patentee after: Shanghai Changyuan Wayon Circuit Protection Co., Ltd. Address before: 200092, Siping Road, Shanghai, No. 710, 715-Z Patentee before: Shanghai Changyuan Wayon Circuit Protection Co., Ltd. |
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070808 Termination date: 20120408 |