CN1330977C - 一种用于x射线源剂量率监控的小尺寸穿透电离室 - Google Patents
一种用于x射线源剂量率监控的小尺寸穿透电离室 Download PDFInfo
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- CN1330977C CN1330977C CNB200410009553XA CN200410009553A CN1330977C CN 1330977 C CN1330977 C CN 1330977C CN B200410009553X A CNB200410009553X A CN B200410009553XA CN 200410009553 A CN200410009553 A CN 200410009553A CN 1330977 C CN1330977 C CN 1330977C
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 9
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000000149 penetrating effect Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 8
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- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 230000008676 import Effects 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 abstract description 5
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- 230000005855 radiation Effects 0.000 abstract description 2
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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CNB200410009553XA CN1330977C (zh) | 2004-09-14 | 2004-09-14 | 一种用于x射线源剂量率监控的小尺寸穿透电离室 |
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CNB200410009553XA CN1330977C (zh) | 2004-09-14 | 2004-09-14 | 一种用于x射线源剂量率监控的小尺寸穿透电离室 |
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CN1749778A CN1749778A (zh) | 2006-03-22 |
CN1330977C true CN1330977C (zh) | 2007-08-08 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100427882C (zh) * | 2006-10-13 | 2008-10-22 | 清华大学 | 气体电离型中低能X、γ射线探测器 |
CN101526622B (zh) * | 2008-03-05 | 2012-03-28 | 清华大学 | 用于辐射监测的探测器设备 |
CN103116178A (zh) * | 2012-12-28 | 2013-05-22 | 湖州师范学院 | 一种放射线检测装置及检测方法 |
CN109037012B (zh) * | 2018-06-29 | 2023-09-05 | 天津敬慎坊科技有限公司 | 一种位置灵敏电离室 |
CN113050150B (zh) * | 2021-03-15 | 2022-08-09 | 合肥中科离子医学技术装备有限公司 | 一种用于回旋加速器抗干扰电流靶 |
CN115432489B (zh) * | 2022-09-19 | 2023-06-06 | 嘉峪关华锐智源工业技术有限公司 | 一种铜箔表面涂层的涂布装置 |
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CN1508564A (zh) * | 2002-12-16 | 2004-06-30 | 清华大学 | 一种用于x射线源剂量率监控的穿透电离室 |
CN2736785Y (zh) * | 2004-09-14 | 2005-10-26 | 清华大学 | 用于x射线源剂量率监控的小尺寸穿透电离室 |
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CN1508564A (zh) * | 2002-12-16 | 2004-06-30 | 清华大学 | 一种用于x射线源剂量率监控的穿透电离室 |
CN2736785Y (zh) * | 2004-09-14 | 2005-10-26 | 清华大学 | 用于x射线源剂量率监控的小尺寸穿透电离室 |
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Owner name: QINGHUA UNIVERSITY; TONGFANGWEISHI TECHNOLOGY CO., Free format text: FORMER NAME OR ADDRESS: QINGHUA UNIVERSITY; TONGFANG WEISHI TECHNOLOGY CO., LTD., QINGHUA |
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Address after: A, Tsinghua Tongfang science and Technology Square, Beijing 2907, postcode: 100083 Co-patentee after: Nuctech Company Limited Patentee after: Tsinghua University Address before: A, Tsinghua Tongfang science and Technology Square, Beijing 2907, postcode: 100083 Co-patentee before: Qinghua Tongfang Weishi Tech Co.,Ltd. Patentee before: Tsinghua University |