CN1322494C - 具有RuAl/NiAlB双晶种层的薄膜介质 - Google Patents

具有RuAl/NiAlB双晶种层的薄膜介质 Download PDF

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Publication number
CN1322494C
CN1322494C CNB2004100824667A CN200410082466A CN1322494C CN 1322494 C CN1322494 C CN 1322494C CN B2004100824667 A CNB2004100824667 A CN B2004100824667A CN 200410082466 A CN200410082466 A CN 200410082466A CN 1322494 C CN1322494 C CN 1322494C
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CN
China
Prior art keywords
layer
nialb
thin film
deposited
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100824667A
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English (en)
Chinese (zh)
Other versions
CN1604200A (zh
Inventor
玛丽·F·多尔纳
唐凯
肖启凡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HGST Inc
Original Assignee
Hitachi Global Storage Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Global Storage Technologies Inc filed Critical Hitachi Global Storage Technologies Inc
Publication of CN1604200A publication Critical patent/CN1604200A/zh
Application granted granted Critical
Publication of CN1322494C publication Critical patent/CN1322494C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/672—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having different compositions in a plurality of magnetic layers, e.g. layer compositions having differing elemental components or differing proportions of elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
CNB2004100824667A 2003-09-30 2004-09-22 具有RuAl/NiAlB双晶种层的薄膜介质 Expired - Fee Related CN1322494C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/676,735 US6863993B1 (en) 2003-09-30 2003-09-30 Thin film media with a dual seed layer of RuAI/NiAIB
US10/676,735 2003-09-30

Publications (2)

Publication Number Publication Date
CN1604200A CN1604200A (zh) 2005-04-06
CN1322494C true CN1322494C (zh) 2007-06-20

Family

ID=34218172

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100824667A Expired - Fee Related CN1322494C (zh) 2003-09-30 2004-09-22 具有RuAl/NiAlB双晶种层的薄膜介质

Country Status (4)

Country Link
US (1) US6863993B1 (cg-RX-API-DMAC7.html)
JP (1) JP2005108419A (cg-RX-API-DMAC7.html)
CN (1) CN1322494C (cg-RX-API-DMAC7.html)
SG (1) SG110172A1 (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7651794B2 (en) * 2005-04-28 2010-01-26 Hitachi Global Storage Technologies Netherlands B.V. Adhesion layer for thin film magnetic recording medium
US20070019328A1 (en) * 2005-07-25 2007-01-25 Mohammad Mirzamaani Laminated magnetic recording media with two sublayers in the lower magnetic layer
US20080131735A1 (en) * 2006-12-05 2008-06-05 Heraeus Incorporated Ni-X, Ni-Y, and Ni-X-Y alloys with or without oxides as sputter targets for perpendicular magnetic recording
US8941950B2 (en) 2012-05-23 2015-01-27 WD Media, LLC Underlayers for heat assisted magnetic recording (HAMR) media
US9490054B2 (en) * 2012-10-11 2016-11-08 Headway Technologies, Inc. Seed layer for multilayer magnetic materials
US9177585B1 (en) 2013-10-23 2015-11-03 WD Media, LLC Magnetic media capable of improving magnetic properties and thermal management for heat-assisted magnetic recording
US11398247B1 (en) 2021-06-21 2022-07-26 Western Digital Technologies, Inc. Magnetic recording media with oxidized pre-seed layer
US11810605B2 (en) 2021-09-29 2023-11-07 Western Digital Technologies, Inc. Magnetic recording media with tungsten pre-seed layer
US11990163B2 (en) * 2022-06-30 2024-05-21 Western Digital Technologies, Inc. Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143388A (en) * 1997-11-24 2000-11-07 International Business Machines Corporation Thin film disk with onset layer
US6159625A (en) * 1997-08-08 2000-12-12 Hitachi Metals Ltd. Target of intermetallic compound with B2-ordered lattice structure, production method thereof and magnetic recording medium having B2-structured underlayer
CN1309386A (zh) * 2000-02-09 2001-08-22 国际商业机器公司 带有预置籽晶层的非金属薄膜磁记录盘

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5800931A (en) * 1994-09-29 1998-09-01 Carnegie Mellon University Magnetic recording medium with a MgO sputter deposited seed layer
US5789056A (en) * 1997-01-30 1998-08-04 International Business Machines Corporation Thin film magnetic disk with chromium-titanium seed layer
US6753101B1 (en) * 1999-06-08 2004-06-22 Fujitsu Limited Magnetic recording medium, magnetic storage apparatus, recording method and method of producing magnetic recording medium
US6740397B1 (en) * 2000-05-24 2004-05-25 Seagate Technology Llc Subseedlayers for magnetic recording media
JP3577486B2 (ja) * 2002-04-25 2004-10-13 Ｈｏｙａ株式会社 磁気記録媒体及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159625A (en) * 1997-08-08 2000-12-12 Hitachi Metals Ltd. Target of intermetallic compound with B2-ordered lattice structure, production method thereof and magnetic recording medium having B2-structured underlayer
US6143388A (en) * 1997-11-24 2000-11-07 International Business Machines Corporation Thin film disk with onset layer
CN1309386A (zh) * 2000-02-09 2001-08-22 国际商业机器公司 带有预置籽晶层的非金属薄膜磁记录盘
US6607842B2 (en) * 2000-02-09 2003-08-19 Hitachi Globel Storage Technologies Netherlands, B.V. Containing an AITa or AITi pre-seed layer, a CoCr onset layer and a CoCrPtB magnetic layer

Also Published As

Publication number Publication date
US6863993B1 (en) 2005-03-08
SG110172A1 (en) 2005-04-28
JP2005108419A (ja) 2005-04-21
US20050069730A1 (en) 2005-03-31
CN1604200A (zh) 2005-04-06

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SE01 Entry into force of request for substantive examination
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070620

Termination date: 20091022