CN1316564C - Composite photoresist layer structure - Google Patents
Composite photoresist layer structure Download PDFInfo
- Publication number
- CN1316564C CN1316564C CNB021058202A CN02105820A CN1316564C CN 1316564 C CN1316564 C CN 1316564C CN B021058202 A CNB021058202 A CN B021058202A CN 02105820 A CN02105820 A CN 02105820A CN 1316564 C CN1316564 C CN 1316564C
- Authority
- CN
- China
- Prior art keywords
- layer
- organic
- organic layer
- photoresist
- layer structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The present invention provides a composite photoresist layer structure which comprises a first organic layer, a sacrificial layer and a second organic layer, wherein the first organic layer is arranged on a surface to be etched, the sacrificial layer is arranged on the first organic layer, and the second organic layer is arranged on the sacrificial layer. The first organic layer is formed by utilizing organic materials which are easy to remove by plasma bodies in order to avoid damaging the surface to be etched in the pattern transferring process.
Description
Technical field
The present invention relates to a kind of photoresist layer structure, particularly a kind of compound photic resist layer structure that is used for the transfer printing of semiconductor technology microsize pattern.
Background technology
Generally speaking, the photoetching process in the semiconductor technology (photolithographic process) and etch process are used for defining structures such as various electronic units in the integrated circuit and intraconnections.Along with the integrated level demand of integrated circuit promotes day by day, the exposure light source in the photoetching process little by little turns to the light that utilizes the deep UV (ultraviolet light) zone from g-line (436nm) or I-line (365nm), and for example wavelength is the exposure light source of 248nm and 193nmm.For the short more light source of wavelength, the thickness of its corresponding photoresist is thin more, yet the too thin meeting of the thickness of photoresist causes it can't resist follow-up etching.Therefore, for the photoetching process of the long exposure light source of radiothermy, seeking a suitable photoresist layer structure is necessary for photoetching process and etch process use.
Please refer to Fig. 1, Fig. 1 is existing photoresist layer structural representation.As shown in Figure 1, semiconductor wafer 10 includes a substrate 12, an anti-reflecting layer 14 and a photoresist layer 16.Because the wavelength and the depth of focus (the depth of focus of exposure light source, DOF) be directly proportional, for accurately with the pattern transfer on the light shield to photoresist layer 16, the thickness of photoresist layer 16 must cooperate the wavelength of exposure light source, therefore for the light source (as less than 248nm) in deep UV (ultraviolet light) zone, the thickness of photoresist layer 16 then can not be too thick, to guarantee near the endmost surface or the photoresist agent molecule of its bottom of photoresist layer 16 rough identical focusing being arranged all.Yet in follow-up etch process, one of effect of photoresist layer 16 promptly is the etching mask as substrate 12, and the thickness of photoresist layer 16 is crossed to approach and can't be kept out the invasion and attack of etch process effectively.
Please refer to Fig. 2, Fig. 2 its objective is in order to overcome above-mentioned problem for existing another kind of photoresist layer structural representation.As shown in Figure 2, semiconductor wafer 20 comprises a substrate 22, a nitrogen-oxygen-silicon layer 24, an anti-reflecting layer 26 and a photoresist layer 28.Wherein nitrogen-oxygen-silicon layer 24 is crossed thin and deficiency that can't keep out the erosion of etch process as a hard mask (hard mask) with the thickness that remedies photoresist layer 28.In addition, after the design transfer on the light shield was to substrate 22, nitrogen-oxygen-silicon layer 24, anti-reflecting layer 26 and photoresist layer 28 were removed subsequently, yet the removal step of nitrogen-oxygen-silicon layer 24 tends to destroy the structure of substrate 22.
In addition, the solution of photoresist layer thickness deficiency also comprises, the one, utilize double-deck photoresist structure technology (United States Patent (USP) the 6th, 323, No. 287), another is to utilize end face mapping (TSI (topsurface image)) technology (United States Patent (USP) the 6th, 296, No. 989).But these two kinds of methods all must be introduced new photo anti-corrosion agent material, and for example, in the TSI technology, the photoresist layer is the photo anti-corrosion agent material of siliceous (silicon-containing).And this will certainly increase the complexity and difficulty of technology, and in addition, the introducing of new photo anti-corrosion agent material also can increase the technology cost, and therefore seeking a suitable photoresist layer structure is necessary for photoetching process and etch process use.
Summary of the invention
The purpose of this invention is to provide a kind of compound photic resist layer structure that is used for the transfer printing of semiconductor technology microsize pattern, to solve foregoing problems.
According to purpose of the present invention, a kind of compound photic resist layer structure is provided in a preferred embodiment of the invention, this compound photic resist layer structure comprises one first organic layer, is located on the surface to be etched, is made of organic low dielectric constant material or spin-coating glass; One sacrifice layer is located on this first organic layer; And one second organic layer, be located on this sacrifice layer.Wherein this first organic layer utilization is easy to constitute with the organic material of plasma removal, to avoid this surface to be etched of damage in the pattern transfer process.
The invention provides a kind of compound photic resist layer structure, it comprises one first organic layer, an inorganic sacrifice layer and one second organic layer.Because the existence of the sacrifice layer and first organic layer, this second organic layer thickness can be adjusted according to the wavelength of exposure light source, do not cross thin and keep out and do not live etched deficiency and do not have the photoresist layer, therefore, predetermined pattern on the light shield can accurately be transferred on the semiconductor wafer, and can obtain a preferred critical dimension (critical dimension, CD) control.In addition, first organic layer can be considered a hard mask, and it can utilize plasma to remove easily, and the removal of first organic layer is considerably slight to the damage of base material.
Description of drawings
Fig. 1 is existing photoresist layer structural representation;
Fig. 2 is existing another kind of photoresist layer structural representation;
Fig. 3 is a compound photic resist layer structural representation of the present invention;
Fig. 4 (A) to Fig. 4 (F) be the schematic diagram that in etch process, utilizes compound photic resist layer 30; And
Fig. 5 is the compound photic resist layer structural representation of another embodiment of the present invention.
Description of reference numerals in the accompanying drawing is as follows:
10 semiconductor wafers, 12 substrates
14 anti-reflecting layers, 16 photoresist layers
20 semiconductor wafers, 22 substrates
24 nitrogen-oxygen-silicon layers, 26 anti-reflecting layer
28 photoresist layers, 30 compound photic resist layer
The 30a first organic layer 30b sacrifice layer
30c second organic layer 40 semiconductor wafers
42 substrates, 50 semiconductor wafers
The 50a first organic layer 50b sacrifice layer
50c anti-reflecting layer 50d second organic layer
Embodiment
Please refer to Fig. 3, Fig. 3 is a compound photic resist layer structural representation of the present invention.As shown in Figure 3, compound photic resist layer 30 comprises one first organic layer 30a, and is located at sacrifice layer 30b and on the first organic layer 30a and is located at the second organic layer 30c on the sacrifice layer 30b.Wherein the first organic layer 30a and the second organic layer 30c are all organic material, and sacrifice layer 30b then is an inorganic material.
Wherein, the first organic layer 30a can utilize plasma to remove easily, and the first organic layer 30a can be by organic low dielectric constant material (SiLK for example
TMMaterial) constitute, in addition, it also can be made of spin-coating glass (SOG (spin-on glass)) layer, and above-mentioned plasma can be oxygen, nitrogen, hydrogen, argon gas, C
xF
y, C
xH
yF
zOr plasma such as helium.The composition of sacrifice layer 30b can be the inorganic anti-reflective material, for example silicon oxynitride (SiON) and silicon nitride, and in addition, sacrifice layer 30b also can be made of hard mask material, for example silicon nitride and silica.And the second organic layer 30c can be an organic photoresist layer, it can be positive photoresist and negative photoresist, in addition, the second organic layer 30c is not limited to organic photo anti-corrosion agent material, and it also can be made of the organic material that is applicable to electron beam lithography (e-beam lithography).And compound photic resist layer 30 is applicable to the arbitrary photoetching process in the semiconductor technology, therefore the thickness of the first organic layer 30a, sacrifice layer 30b and the second organic layer 30c is adjusted according to the needs of technology, and this should be well known to those skilled in the art.
Please refer to Fig. 4 (A) to Fig. 4 (F), Fig. 4 (A) to Fig. 4 (F) be the schematic diagram that in etch process, utilizes compound photic resist layer 30.Shown in Fig. 4 A, semiconductor wafer 40 comprises treats etched substrate 42, and compound photic resist layer 30 is formed at and treats on the etch substrate 42, treats that wherein etch substrate 42 comprises silicon substrate, metal substrate and dielectric layer etc.At first, with shown in Fig. 4 (C), carry out an exposure technology and a developing process, as Fig. 4 (B) so that the predetermined pattern on the light shield is transferred in the second organic layer 30c.Then, utilize the second organic layer 30c, sacrifice layer 30b is carried out 1,000 method etch processs, so that the predetermined pattern in the second organic layer 30c is transferred in the sacrifice layer 30b as an etching mask.In addition, among another embodiment of the present invention, also can utilize electron beam lithography in the second organic layer 30c, to form this predetermined pattern.
Then, to shown in Fig. 4 (F), carry out an anisotropic etching process as Fig. 4 (D), and utilize sacrifice layer 30b, so that the predetermined pattern in the sacrifice layer 30b is transferred in the first organic layer 30a as an etching mask.Then, utilize the sacrifice layer 30b and the first organic layer 30a as an etching mask again, and carry out an etch process, treat within the etch substrate 42 so that the predetermined pattern in the first organic layer 30a and the sacrifice layer 30b is transferred to.Wherein, treat that in etching in the process of etch substrate 42, sacrifice layer 30b can be removed in the lump.When the predetermined pattern in the first organic layer 30a be transferred to treat within the etch substrate 42 after, remove the first organic layer 30a immediately, so far, the pattern on the light shield just successfully is transferred to and treats in the etch substrate 42.Wherein, the first organic layer 30a can be considered a hard mask, it can remedy the thickness deficiency of the second organic layer 30c and can't keep out etched defective, and therefore, compound photic resist layer 30 of the present invention can be used for the exposure light source (as the LASER Light Source of wavelength less than 248nm) in deep UV (ultraviolet light) zone.In addition, the removal step of traditional hard mask material (as silicon nitride or silica) is carried out in acid tank usually, treats etch substrate 42 and this step tends to major injury.But the first organic layer 30a only need utilize plasma can remove it, and its injury for the treatment of etch substrate 42 is slighter.
Please refer to Fig. 5, Fig. 5 is the compound photic resist layer structural representation of another embodiment of the present invention.As shown in Figure 5, a compound photic resist layer 50 comprises one first organic layer 50a, and is located at sacrifice layer 50b, on the first organic layer 50a and is located at anti-reflecting layer 50c and on the sacrifice layer 50b and is located at the second organic layer 50d on the anti-reflecting layer 50c.Wherein the first organic layer 50a is made of organic low dielectric constant material or SOG, and it can utilize plasma to remove easily.Sacrifice layer 50b is made of hard mask material, and it comprises silicon nitride with silica.Anti-reflecting layer 50c is for example polyimides (polyimide) and an analog thereof of organic antireflecting material (organic bottom ARC), and in addition, anti-reflecting layer 50c also can be made of the inorganic anti-reflective material, for example silicon oxynitride (SiON).And the second organic layer 50d can be an organic photoresist layer, it can be positive photoresist and negative photoresist, in addition, the second organic layer 50d is not limited to organic photo anti-corrosion agent material, and it also can be made of the organic material that is applicable to electron beam lithography (e-beam lithography).And anti-reflecting layer 50c is used for preventing incident ray via the base material photic resist layer of reflected back again, and forms standing wave (standing wave) in the second organic layer 50d, and then causes the change of photoresist live width.As previously mentioned, compound photic resist layer 50 is also applicable to the arbitrary photoetching process in the semiconductor technology, therefore the thickness of the first organic layer 50a, sacrifice layer 50b, anti-reflecting layer 50c and the second organic layer 50d is adjusted according to the needs of technology, and this should be well known to those skilled in the art.
Compared to prior art, the invention provides a kind of compound photic resist layer structure, it comprises one first organic layer, an inorganic sacrifice layer and one second organic layer.This second organic layer thickness can cooperate the wavelength of exposure light source to adjust, and by the thickness of adjusting the sacrifice layer and first organic layer, to provide an enough thick compound photic resist layer structure to keep out the erosion of etch process, therefore, predetermined pattern on the light shield can accurately be transferred on the semiconductor wafer, and can obtain a preferred critical dimension (critical dimension, CD) control.In addition, first organic layer can be considered a hard mask, but it can utilize plasma to remove easily, and the removal step of first organic layer can not cause serious injury base material.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (27)
1. compound photic resist layer structure comprises:
One first organic layer is located on the surface to be etched, is made of organic low dielectric constant material or spin-coating glass;
One sacrifice layer is located on this first organic layer; And
One second organic layer is located on this sacrifice layer.
2. compound photic resist layer structure as claimed in claim 1, wherein this surface to be etched is a silicon face, a metal surface or a dielectric layer surface.
3. compound photic resist layer structure as claimed in claim 1, wherein this first organic layer utilization is easy to constitute with the organic material of plasma removal, to avoid this surface to be etched of damage in a pattern transfer process.
4. compound photic resist layer structure as claimed in claim 3, wherein this plasma is oxygen, nitrogen, hydrogen, argon gas, C
xF
y, C
xH
yF
zOr helium plasma.
5. compound photic resist layer structure as claimed in claim 1, wherein this sacrifice layer is made of the inorganic anti-reflective material.
6. compound photic resist layer structure as claimed in claim 1, wherein this sacrifice layer is made of silicon nitride, silica or silicon oxynitride.
7. compound photic resist layer structure as claimed in claim 1, wherein this second organic layer is made of organic photoresist that can absorb the following wavelength light of 248nm.
8. compound photic resist layer structure as claimed in claim 1, wherein this second organic layer is applicable to electron beam lithography.
9. a photoresist layer structure is used for the transfer printing of semiconductor technology microsize pattern, and this photoresist layer structure comprises:
One first organic layer is located on the surface to be etched;
One sacrifice layer is located on this organic layer;
One anti-reflecting layer is located on this sacrifice layer; And
One second organic layer is located on this anti-reflecting layer.
10. photoresist layer structure as claimed in claim 9, wherein this surface to be etched is a silicon face, a metal surface or a dielectric layer surface.
11. photoresist layer structure as claimed in claim 9, wherein this first organic layer utilization is easy to constitute with the organic material that plasma is removed, to avoid this surface to be etched of damage in a pattern transfer process.
12. photoresist layer structure as claimed in claim 11, wherein this first organic layer is made of organic low dielectric constant material or spin-coating glass.
13. photoresist layer structure as claimed in claim 11, wherein this plasma is oxygen, nitrogen, hydrogen, argon gas, C
xF
y, C
xH
yF
zOr helium plasma.
14. photoresist layer structure as claimed in claim 9, wherein this sacrifice layer is made of silicon nitride or silica.
15. photoresist layer structure as claimed in claim 9, wherein this anti-reflecting layer is made of the organic antireflecting material.
16. photoresist layer structure as claimed in claim 15, wherein this anti-reflecting layer is made of polyimides.
17. photoresist layer structure as claimed in claim 9, wherein this anti-reflecting layer is made of the inorganic anti-reflective material.
18. photoresist layer structure as claimed in claim 17, wherein this anti-reflecting layer is made of silicon nitride or silicon oxynitride.
19. photoresist layer structure as claimed in claim 9, wherein this sacrifice layer is removed in a predetermined pattern is transferred to the process of this surface to be etched, and this first organic layer then is just to utilize plasma to remove after this predetermined pattern is transferred to this surface to be etched.
20. photoresist layer structure as claimed in claim 9, wherein this second organic layer is made of organic photoresist that can absorb the following wavelength light of 248nm.
21. photoresist layer structure as claimed in claim 9, wherein this second organic layer is applicable to electron beam lithography.
22. a method of making semiconductor element, it comprises:
One substrate is provided;
On this substrate, form successively one first organic layer, a sacrifice layer, with one second organic layer;
Carry out a photoetching process, in this second organic layer, to form a predetermined pattern;
Utilize this second organic layer as an etching mask with this sacrifice layer of etching, and expose the surface of this first organic layer, so that this predetermined pattern is transferred in this sacrifice layer;
Utilize this sacrifice layer as an etching mask, this first organic layer of etching is up to the surface of this substrate, this predetermined pattern is transferred in this first organic layer;
Utilize this sacrifice layer and this first organic layer as etching mask with this substrate of etching, so that this predetermined pattern is transferred in this substrate; And
Utilize plasma to remove this first organic layer;
Wherein this first organic layer is made of organic low dielectric constant material or spin-coating glass.
23. method as claimed in claim 22, wherein this plasma is oxygen, nitrogen, hydrogen, argon gas, C
xF
y, C
xH
yF
zOr helium plasma.
24. method as claimed in claim 22, wherein this sacrifice layer is made of silicon nitride or silica.
25. method as claimed in claim 22, wherein this second organic layer is made of organic photoresist that can absorb the following wavelength light of 248nm.
26. method as claimed in claim 22, wherein this second organic layer is applicable to electron beam lithography.
27. method as claimed in claim 22, wherein this substrate is a silicon substrate, a metal substrate or a dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021058202A CN1316564C (en) | 2002-04-11 | 2002-04-11 | Composite photoresist layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021058202A CN1316564C (en) | 2002-04-11 | 2002-04-11 | Composite photoresist layer structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1450595A CN1450595A (en) | 2003-10-22 |
| CN1316564C true CN1316564C (en) | 2007-05-16 |
Family
ID=28680075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021058202A Expired - Lifetime CN1316564C (en) | 2002-04-11 | 2002-04-11 | Composite photoresist layer structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1316564C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8071487B2 (en) | 2006-08-15 | 2011-12-06 | United Microelectronics Corp. | Patterning method using stacked structure |
| US7491343B2 (en) * | 2006-09-14 | 2009-02-17 | Lam Research Corporation | Line end shortening reduction during etch |
| CN103058127B (en) * | 2012-12-14 | 2017-02-08 | 上海集成电路研发中心有限公司 | Surface treatment method of micro-strip |
| JP2016206449A (en) * | 2015-04-23 | 2016-12-08 | 株式会社東芝 | Patten forming method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441849A (en) * | 1988-07-11 | 1995-08-15 | Hitachi, Ltd. | Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer |
-
2002
- 2002-04-11 CN CNB021058202A patent/CN1316564C/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441849A (en) * | 1988-07-11 | 1995-08-15 | Hitachi, Ltd. | Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1450595A (en) | 2003-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7718345B2 (en) | Composite photoresist structure | |
| EP0265638A2 (en) | Lithographic image size reduction | |
| US9263284B2 (en) | Line width roughness improvement with noble gas plasma | |
| TW580733B (en) | Dry etching process and a fabrication process of a semiconductor device using such a dry etching process | |
| US6764946B1 (en) | Method of controlling line edge roughness in resist films | |
| US6100010A (en) | Photoresist film and method for forming pattern thereof | |
| CN1316564C (en) | Composite photoresist layer structure | |
| KR100310257B1 (en) | Method of forming minute pattern in semiconductor device | |
| KR20100127183A (en) | Resist coating method and resist pattern forming method | |
| KR100472031B1 (en) | Method for fabrication of semiconductor device | |
| CN101221889A (en) | Method for forming graphic pattern | |
| JP2010073899A (en) | Method for processing substrate and substrate processing apparatus | |
| KR100819647B1 (en) | Method of Manufacturing Semiconductor Device | |
| KR100545185B1 (en) | Method for fabricating fine contact hole | |
| KR100265361B1 (en) | Method for improving etching selectivity of photoresist | |
| KR20030050172A (en) | Method for forming a photo resist pattern of semiconductor device | |
| KR100546158B1 (en) | Manufacturing method of semiconductor device | |
| US20020168838A1 (en) | Method for performing lithographic process to a multi-layered photoresist layer | |
| CN112530794A (en) | Photoetching method, semiconductor device and manufacturing method thereof | |
| CA1260627A (en) | Lithographic image size reduction photomask | |
| KR100454626B1 (en) | Method for forming metal interconnection of semiconductor device to control bowing phenomenon and form metal interconnection of uniform cd | |
| KR100807521B1 (en) | A method of fabricating semiconductor device | |
| KR20020002641A (en) | Manufacturing method for semiconductor device | |
| JP2000323452A (en) | Dry etching method | |
| KR19990040497A (en) | Pattern formation method of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20070516 |
|
| CX01 | Expiry of patent term |