CN1316545C - Static electricity preventing device using flexible x-ray and method for making its flexible x-ray tubes - Google Patents
Static electricity preventing device using flexible x-ray and method for making its flexible x-ray tubes Download PDFInfo
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- CN1316545C CN1316545C CNB200310116297XA CN200310116297A CN1316545C CN 1316545 C CN1316545 C CN 1316545C CN B200310116297X A CNB200310116297X A CN B200310116297XA CN 200310116297 A CN200310116297 A CN 200310116297A CN 1316545 C CN1316545 C CN 1316545C
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- 230000003068 static effect Effects 0.000 title claims abstract description 21
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- Elimination Of Static Electricity (AREA)
Abstract
The present invention relates to an electrostatic prevention device which utilizes soft X-rays to radiate air to generate positive ions and negative ions to neutralize surface static electricity in liquid crystals, semiconductor chips, etc., and a method for manufacturing a soft X-ray tube thereof. The electrostatic prevention device of the present invention comprises an electrostatic prevention head which can directly ionize air molecules, a protection part which surrounds the head and protects operators from radiating by radioactive rays, a power supply control part which can generate a filament current and a target voltage for controlling the ion generation of a soft X-ray tube, and the soft X-ray tube which can generate high energy soft X-rays. The manufacture method of the soft X-ray tube mainly comprises the following steps that firstly, a metal spraying film of a ceramic tube is generated; then, an anode substance is coated on a beryllium window plate; tungsten is plated on the beryllium window; a special vacuum furnace is used for high vacuum brazing, etc. The present invention can be used for neutralizing static electricity carried by combustible powder, moderating the static electricity generated in the engineering of liquid crystal, plasma and semiconductor manufacture and reducing the dust adhesion caused by static electricity and the fire hazard and accident rate caused by crystal lattice damage and static electricity ignition.
Description
Technical field
The present invention relates to antistatic technique, in particular, relate to a kind of anti-static device that utilizes grenz ray.
Background technology
In manufacturing engineerings such as liquid crystal (LCD), plasma (PDP) and semiconductor, because the fine dust that static causes absorption and because static discharge causes lattice damage, cause the rate of finished products of product to reduce, thereby become the main cause that influences output and cause the rising of manufacturing cost.
In above-mentioned manufacturing industry, as the antistatic countermeasure, main at present ion grid or the ion blower that generates ion according to corona discharge that use, but the ion that these devices produce need be used fan convection current air, in this process, jet phenomenon according to high-voltage discharge, produce on the end of sparking electrode and adhere to a lot (tens thousand of/cubic feet) metal microparticle, because the forced convertion of fan, thereby come off and attached to causing bad around liquid crystal (LCD), plasma (PDP) and the semiconductor lattice.
And the ozone gas that takes place during high-voltage discharge reaches about 4 ~ 10ppm, and this not only promotes adhering to of dust, and can make the balance of the negative ions that generates take place at any time to change, thereby has the inconvenience that needs constantly to adjust ionic equilibrium.Therefore the antistatic technique that dust does not need the convection current air yet need not take place.
Fig. 1 is that the corona discharge type anti-static device of conventional art is the typical principle schematic of applied voltage formula anti-static device.As shown in the figure, applying high voltage on sparking electrode, according to corona discharge, the gas ionization around the sparking electrode generates negative ions, the negative ions of generation can in and the static of electrostatic charging surface.
On the other hand, at growing ultraprecise series electron industrial technology and bio-science field, in order to form peace and quiet or to be almost aseptic clean room, need be with the air cleaning technology as its basis.The pollution that brings owing to Electrostatic Absorption at these clean rooms becomes most important reason.Especially very lagre scale integrated circuit (VLSIC) (ULSI), in the manufacturing of plasma (PDP) and tft liquid crystal (TFT-LCD), dielectric oxide film (SiO
2) or glass surface be high insulator, so be easy to take place electrostatic charging.The static that takes place in process so not only significantly reduces the reliability of product, and becomes the immediate cause that product yield reduces.The pollution of a little also can bring very big baneful influence to semi-conductive characteristic.Therefore need new anti-antistatic technology.
The conventional art in this field has United States Patent (USP) No. 5949849.This patent is relevant x ray generator and the content of utilizing its anti-static device.Anti-static device according to this patent possesses the protection box; the X-ray tube and the supply unit of grenz ray take place; X-ray tube possesses vacuum tube, negative electrode, output window, output window support portion, flanged pipe, anode (target) in addition, and inner constituent element of these X-ray tubes and protection box are mutually with heat and electrical connection.
Another conventional art in this field has Japan Patent No. 2951477.This patent is the content of relevant antistatic technique, want the charged object of antistatic to aim on the position of X-radiation, the built-in anode (target) of giving certain voltage and electric current, assembling simultaneously has the X-ray tube of beryllium window, from above-mentioned beryllium window radiation wavelength be more than 2 dusts to the X ray ionization of the 20 following scopes elemental gas in should the zone, with in and the static of charged object.
But the X ray wavelength that these conventional arts took place is very long, and the thermal characteristics of X-ray generator is not outstanding.
Summary of the invention
At the above-mentioned defective of prior art, the present invention will provide the anti-static device as the grenz ray of the certain wavelength that is fit to eliminate storage static on vierics plate and the wafer surface in the clean room of liquid crystal (LCD), plasma (PDP) and semiconducter engineering (1.2 dusts are above to below 1.5).
The technical solution adopted for the present invention to solve the technical problems is: using the ion generation pipe of beryllium film plating tungsten window material is that the grenz tube generation is high-octane, wavelength is between the grenz ray of 1.2 dust to 1.5 dusts, the static of the antistatic target object that is used for neutralizing and weaken.The manufacture method of described grenz tube is as follows: at first generate earthenware metal spraying film; The non-electrolytic nickel of plating on described metal spraying film; Tungsten filament had mercy on rod iron extract back LaBaO coating again out; On the beryllium window board, be coated with anode material again; Utilize the FVAS plater on the beryllium window, to electroplate tungsten; Use special-purpose vacuum furnace to carry out the high vacuum brazing; Near the last getter that inner cathode, inserts with Zr-Ni-V-Fe material formation, and the degassing and activate under 450 ℃ of conditions.
A kind of anti-static device that utilizes grenz ray provided by the invention comprises the anti-antistatic head that uses the static of the grenz ray neutralization that produces as the grenz tube of window with beryllium film plating tungsten material and reduction antistatic target object; Surround described antistatic head, be used to protect the operator not to be subjected to the protection portion of the soft x-ray radiation of described antistatic head leakage; Be connected, provide the power control part of filament voltage and target voltage by cable with described antistatic head and described protection portion for described grenz tube; The further anode voltage generating unit of described power control part, described anode voltage generating unit use one group of pulse width modulator and half-bridge circuit to control the target voltage and the heater current of described grenz tube respectively.
In the above-mentioned anti-static device that utilizes grenz ray, described half-bridge circuit constitutes field-effect transistors, and the switching frequency of described half-bridge circuit is 30KHz.
In the above-mentioned anti-static device that utilizes grenz ray, the anode voltage generating unit of described power control part also includes: the high pressure that produce high-tension tube voltage transducer that high-tension transformer, induction described generation high-tension transformer produced, produces constant voltage by described tube voltage sensor feedback effect adds doubler rectifier, is connected with half-bridge circuit with described one group pulse width modulator that is used to control the target voltage of described grenz tube.
In the above-mentioned anti-static device that utilizes grenz ray, the anode voltage generating unit of described power control part also includes: produce the tube current transducer and the heater current transducer of the heater current that transformer produced of transformer, the described generation heater current of induction of heater current, be connected with half-bridge circuit with described one group pulse width modulator that is used to control the heater current of described grenz tube.
In the above-mentioned anti-static device that utilizes grenz ray, the anode voltage generating unit of described power supply control provides the constant target voltage of 9.5KV after by described tube voltage sensor feedback, and described power control part provides the constant heater current of 150 μ A after by described tube current transducer and described heater current sensor feedback.
Anti-static device of the present invention utilize near the ambient gas the grenz ray ionization charged object and generate ion or electronics come in and the static of antistatic body surface.Described grenz ray protection portion is that the steel plate of 1mm constitutes with thickness, also comprises the coupled switch that the described power control part of control whether move and the door of the described coupled switch of ON/OFF, and described antistatic head does not generate grenz ray under described the state of opening.
In order to suppress the heating temp of grenz tube, above-mentioned grenz tube uses earthenware.
The maximum of above-mentioned anti-static device effectively is provided with distance for 2000mm, near the ambient gas the ionization charged object and generate the static of corrective surface behind ion or the electronics.
The above-mentioned high-octane light of anti-static device radiation (wavelength is between 1.2 dusts ~ 1.5 dusts) that utilizes grenz ray and direct ion oxidizing gases molecule, but in non-active gas also antistatic.Utilize near the ambient gas the ionization charged object and generate ion or the neutralize surface electrostatic of anti-charged object of electronics.
The anode of grenz tube (target) voltage is 9.5KV, and heater current is 150uA.
The grenz tube manufacture method that is used for above-mentioned anti-static device is as follows: at first to obtain earthenware metal spraying film, specifically be on pottery with behind the method for printing screen spraying MoMn paste, in hydrogen atmosphere, cool off again after two hours with 1350 ℃ of heating; After the cooling, in order to promote wettability, carry out the electrolytic nickel metalized on the surface during for brazing; According to the diameter of the amount of electrons that will generate decision tungsten filament, twine at certain thickness rod iron to extract out behind the filament of a fixing turn and use the LaBaO coating after the nickel plating; Then, be coated with anode material on the beryllium window board, the scolder that this step will make the copper by 73% silver and 27% constitute is only being wanted the marginal position of brazing, and can not flow into the anode surface of coating, thereby lowers efficiency; Utilize FVAS (Filtered Vacuum Arc Source) plater on the beryllium window, to electroplate tungsten behind the above-mentioned anode material of coating; Use special-purpose vacuum furnace to carry out the high vacuum brazing, use molybdenum heating installation to make temperature reach 900 ℃, for vacuum degree reaches 4 * 10
-7Torr utilizes turbine pump (Turbo molecularPump) and rotary pump (Rotary Pump) exhaust; After being ready to all parts, under the vacuum degree situation in holding tube, the impression scolder becomes one in case surpass the fusing point all material, brazing in conjunction with the time want the vacuum exhaust in the holding tube to carry out smoothly, can keep high vacuum state in the pipe that makes like this.
In order to prolong the life-span of pipe, near the non-evaporable getter that constitutes with the Zr-Ni-V-Fe material inner cathode, getter insert the back degassing and activate in 450 ℃.
Adopt the spot welding mode to connect on the titanium cylinder outer wall that is fixed on negative electrode when getter pastes filament, the getter of activate can be adsorbed on the gas in the space in the pipe of sealing, can keep vacuum degree for a long time thus, and increase the service life.
The characteristics of utilizing the anti-static device of grenz ray as constituted above are the ions that can generate high concentration, thus can be in the very short time antistatic, and the voltage of residual static is very low, also antistatic in the non-active gas of atmospheric pressure state.
The present invention utilizes the anti-static device of grenz ray to generate the static on ion rear defence charged object surface by near the ambient gas the ionization charged object.Need traditional corona discharge type anti-static device of fan different with transmission, but use grenz ray also antistatic in the gas of windless condition for ion.
The anti-static device (perhaps light radiation formula anti-static device) that utilizes grenz ray according to the present invention be near the ambient gas the ionization charged object and generate ion after the static of the charged body surface of neutralization.The grenz ray anti-static device is in non-active gas or comprise in the atmosphere of oxygen (in the air) effectively antistatic thus.
As above said anti-static device neutralization of the present invention, mitigation antistatic target object comprise flammable powder, coating, LCD, PDP and semiconductor.
The anti-static device of grenz ray and the existing corona discharge type anti-static device of utilizing of the present invention thus relatively has following advantage:
1) N
2But, also antistatic in the non-active gas such as Ar.
2) the lower tape electric potential almost remain to ± 5V in.
3) can eliminate static in the short time (about 1 second).
4) the gas dependence in the no surrounding air.
5) do not use fan, so do not send out dirt.
6) no electromagnetism noise.
7) non-maintaining.
The grenz tube that anti-static device of the present invention uses can adopt earthenware, because use the ceramic ray tube of integrated the two poles of the earth and X ray window, can suppress heating temp.Compare with the glass tubular type X-ray tube that takes place with the amount ray, adopt the anti-static device volume of earthenware little, and grenz ray luminous efficiency height, also can drive with the small power supply device.Anti-static device of the present invention adopts constant heater current, can be so that the long-time generating capacity of back grenz ray that uses can not change yet.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the antistatic principle schematic of traditional applied voltage formula anti-static device;
Fig. 2 is the structure chart of an embodiment constituting of the anti-static device that utilizes grenz ray according to the present invention;
Fig. 3 is the structure chart of power control part according to an embodiment of the invention;
Fig. 4 is the internal structure figure that is useful in grenz tube of the present invention;
Fig. 5 is the ion generating principle figure that is useful in grenz ray generating means of the present invention.
Embodiment
Below in conjunction with Fig. 2 to Fig. 5 the specific embodiment of the present invention is described:
Fig. 2 is the structure chart of an embodiment of the anti-static device that utilizes grenz ray of the present invention.As shown in the figure; anti-static device 1000 comprises the antistatic head 100 that is used for producing grenz ray; surround above-mentioned antistatic head 100 and prevent that above-mentioned head 100 from leaking out the grenz ray protection portion 200 of grenz ray; and make grenz ray that above-mentioned head 100 produces appropriate amounts to control ionogenic control signal and for above-mentioned head 100 provides the power control part 300 of control voltage, antistatic head 100 links to each other with power control part 300 by AC high voltage control cable 10 with protection portion 200.
The above-mentioned grenz ray protection portion 200 usefulness thickness that prevent to spill grenz ray are that the steel plate of 1mm constitutes.Anti-static device 1000 also includes for security set and controls the interlock switch 220 that whether above-mentioned power control part 300 move and the door 210 of the above-mentioned interlock switch 220 of ON/OFF, and door 210 is under the state of opening, and grenz ray does not take place above-mentioned antistatic head 100.Above-mentioned antistatic head 100 uses grenz tube to produce grenz ray, and above-mentioned power control part 300 provides the control power supply for above-mentioned grenz tube.
Fig. 3 is the structure chart of power control part 300 according to an embodiment of the invention, as shown in the figure, and the filament voltage of power control part 300 control grenz tubes 150 (direct current+3V) and the ionogenic target voltage (9.5kV) of grenz tube.Following detailed description according to the action and the effect of power control part 300 of the present invention.
Use pulse width modulator 310 (as LT3526) control target voltage and heater current in the anti-static device of the present invention, make field-effect transistors (as IRFP640) constitute half-bridge circuit 320, the switching frequency of this half-bridge circuit is 30KHz.As shown in the figure, the present invention is provided with one group of pulse width modulator 310 respectively and half-bridge circuit 320 is controlled heater current and target voltage.
In the present invention, produce high-tension transformer 340 and high pressure add doubler rectifier 350 by tube voltage transducer 370 feedbacks after, keep constant voltage (9.5kV) output.On the other hand, produce the transformer 360 of heater current by tube current transducer 380 feedbacks, the constant current that keeps 150uA.Adopt constant heater current and the benefit of non-constant filament voltage is, if adopt the constant voltage mode, when filament attenuates, the temperature of tungsten filament 157 can rise, and causes the broken string of filament at the initial stage of energising.The present invention adopts current constant mode, can be so that the long-time generating capacity of back grenz ray that uses can not change yet.
As shown in the figure, power control part 300 also is provided with the high-tension transformer 340 of generation and high pressure adds doubler rectifier 350, generate the transformer 360 of the generation heater current of heater current, heater current detecting means 330, the tube voltage transducer 370 of sensing tube voltage, the tube current transducer 380 of sensing tube current, reference comparator 390 and fixing ceramic grenz tube and the part that high voltage is imported by insulated electric conductor.The transformer 360 that produces high-tension transformer 340 and generation heater current all is to be high-tension transformer, needs the power capacity about 7W in this example.At these label 153 expression positive plates.As shown in the figure, producing high-tension transformer 340, high pressure adds doubler rectifier 350, tube voltage transducer 370 and is connected with half-bridge circuit 320 with one group of pulse width modulator 310 that is used to control the target voltage of grenz tube 150.The transformer 360, heater current transducer 330, tube current transducer 380 that produces heater current is connected with half-bridge circuit 320 with one group of pulse width modulator 310 that is used to control the heater current of grenz tube 150.
Grenz tube 150 is by the tungsten filament 157 that produces electronics and adopt the beryllium window board 151 of beryllium film plating tungsten and be used for the high voltage generating unit of accelerated electron and form.Impact beryllium window 151 after the electronics that tungsten filament 157 produces is quickened by the high voltage generating unit and produce grenz ray.
Below in conjunction with Fig. 4 X-ray tube manufacturing process is described.
With the silk screen print method Mo Mn paste that sprays paint, wettability is promoted in and 1350 ℃ of heating cooling and obtain the metal treatment film after two hours in hydrogen atmosphere during for brazing, also need nickel plating on the face of metal spraying on ceramic post jamb 155.
Diameter according to the amount of electrons decision tungsten filament 157 that will produce uses the filament of diameter as 0.125mm in example of the present invention, extract and be coated with LaBaO again out behind volume 12 circles on the rod iron of 1mm.
Be coated with anode material on beryllium window board 151, the scolder that this step will make the copper by 73% silver and 27% constitute is only being wanted the marginal position of brazing, and can not flow into the anode surface of coating, thereby lowers efficiency; Utilize FVAS (Filtered VacuumArc Source) plater on the beryllium window, to electroplate tungsten behind the above-mentioned anode material of coating; Use special-purpose vacuum furnace to carry out the high vacuum brazing, use molybdenum heating installation to make temperature reach 900 ℃, for vacuum degree reaches 4 * 10
-7Torr utilizes turbine pump (Turbo molecular Pump) and rotary pump (Rotary Pump) exhaust; After being ready to all parts, under the vacuum degree situation in holding tube, the impression scolder becomes one in case surpass the fusing point all material, brazing in conjunction with the time want the vacuum exhaust in the holding tube to carry out smoothly, can keep high vacuum state in the pipe that makes like this.
And in order to prolong the life-span of pipe, near inner cathode, insert getter 156, getter 156 is the non-easy evaporated materials that constitute with Zr-Ni-V-Fe, adopts the spot welding mode to connect on the titanium cylinder outer wall that is fixed on negative electrode when getter pastes filament, and in the temperature more than 450 ℃ by activate.Getter can be adsorbed on the gas in the space in the pipe of sealing, can keep vacuum degree for a long time thus, and increase the service life.
At this 153 are positive plates, and 152,154 and 158 is scolders, the 159th, and the ceramic pins head.160 is plane graphs of 159, and 161 is plane graphs of 155.
Fig. 5 is the design drawing that is useful in the ion generating principle of grenz ray generating means 400 of the present invention.The 410th, stable atom/molecule state, the 420th, the state of faint X ray and the conflict of stable atom/molecule, the 430th, stable atom/molecule is rendered as the state of cation, the 440th, the state of diagram electronics and stable atom/molecule combination, the 450th, the atom/molecule of diagram and electronics combination is rendered as the state of anion.
The target voltage that grenz ray takes place in the present invention is 9.5kV, and heater current is 150uA.
Claims (7)
1, a kind of anti-static device that utilizes grenz ray comprises that use is with the antistatic head of beryllium film plating tungsten material as the static of the grenz ray neutralization of the grenz tube generation of window and the antistatic target object that weakens; Surround described antistatic head, be used to protect the operator not to be subjected to the protection portion of the soft x-ray radiation of described antistatic head leakage; Link to each other, provide the power control part of filament voltage and target voltage by cable with described antistatic head and described protection portion for described grenz tube; it is characterized in that; described power control part comprises the anode voltage generating unit, and described anode voltage generating unit uses one group of pulse width modulator and half-bridge circuit to control the target voltage and the heater current of described grenz tube respectively.
2, the anti-static device that utilizes grenz ray according to claim 1 is characterized in that, described half-bridge circuit constitutes field-effect transistors, and the switching frequency of described half-bridge circuit is 30KHz.
3, the anti-static device that utilizes grenz ray according to claim 1, it is characterized in that, the anode voltage generating unit of described power control part also includes: the high pressure that produce high-tension tube voltage transducer that high-tension transformer, induction described generation high-tension transformer produced, produces constant voltage by described tube voltage sensor feedback effect adds doubler rectifier, is connected with half-bridge circuit with described one group pulse width modulator that is used to control the target voltage of described grenz tube.
4, the anti-static device that utilizes grenz ray according to claim 3, it is characterized in that, the anode voltage generating unit of described power control part also includes: produce the tube current transducer and the heater current transducer of the heater current that transformer produced of transformer, the described generation heater current of induction of heater current, be connected with half-bridge circuit with described one group pulse width modulator that is used to control the heater current of described grenz tube.
5, the anti-static device that utilizes grenz ray according to claim 4, it is characterized in that, the anode voltage generating unit of described power control part provides the constant target voltage of 9.5KV after by described tube voltage sensor feedback, and described power control part provides the constant heater current of 150 μ A after by described tube current transducer and described heater current sensor feedback.
6, the anti-static device that utilizes grenz ray according to claim 1 is characterized in that, described grenz tube is for suppressing the earthenware of heating temp.
7, the anti-static device that utilizes grenz ray according to claim 1 is characterized in that, it is that the steel plate of 1mm constitutes that described protection portion adopts thickness, also comprises the coupled switch that whether the described power control part of control moves and the door of the described coupled switch of ON/OFF; Described door is under open mode, and described antistatic head can not produce X ray.
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CNB200310116297XA CN1316545C (en) | 2003-11-17 | 2003-11-17 | Static electricity preventing device using flexible x-ray and method for making its flexible x-ray tubes |
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CNB200310116297XA CN1316545C (en) | 2003-11-17 | 2003-11-17 | Static electricity preventing device using flexible x-ray and method for making its flexible x-ray tubes |
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CN1316545C true CN1316545C (en) | 2007-05-16 |
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CNB200310116297XA Expired - Fee Related CN1316545C (en) | 2003-11-17 | 2003-11-17 | Static electricity preventing device using flexible x-ray and method for making its flexible x-ray tubes |
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Families Citing this family (7)
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KR100512129B1 (en) * | 2003-08-14 | 2005-09-05 | (주)선재하이테크 | A device for removing electrostatic charges on an object using soft X-ray |
JP4751275B2 (en) * | 2006-08-23 | 2011-08-17 | 近藤工業株式会社 | Soft X-ray shielding sheet used for soft X-ray electrostatic removal apparatus and method for producing the same |
CN101404852B (en) * | 2008-11-14 | 2011-04-20 | 上海安平静电科技有限公司 | Method and device for electrostatic elimination by optical ion |
CN101916699B (en) * | 2010-08-19 | 2011-11-16 | 四川虹欧显示器件有限公司 | Electrostatic prevention method and system for PDP module assembly line |
CN102693888A (en) * | 2011-03-24 | 2012-09-26 | 方钢群 | Preparation method of ceramic soft X ray tube |
CN102956419A (en) * | 2012-11-27 | 2013-03-06 | 公安部第一研究所 | Soft X-ray tube and manufacturing method thereof and photoion electrostatic eliminator with ray tube |
KR101471382B1 (en) * | 2013-10-15 | 2014-12-10 | (주)선재하이테크 | Apparatus for removing electro static |
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US5949849A (en) * | 1996-09-27 | 1999-09-07 | Hamamatsu Photonics K.K. | X-ray generator and electrostatic remover using the same |
KR20010009566A (en) * | 1999-07-12 | 2001-02-05 | 조순문 | Apparatus for eliminating static electricity using soft x-ray |
JP2001523384A (en) * | 1997-05-05 | 2001-11-20 | ナノダイナミクス、インコーポレーテッド | X-ray tube and microelectronics alignment process |
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US5949849A (en) * | 1996-09-27 | 1999-09-07 | Hamamatsu Photonics K.K. | X-ray generator and electrostatic remover using the same |
JP2001523384A (en) * | 1997-05-05 | 2001-11-20 | ナノダイナミクス、インコーポレーテッド | X-ray tube and microelectronics alignment process |
KR20010009566A (en) * | 1999-07-12 | 2001-02-05 | 조순문 | Apparatus for eliminating static electricity using soft x-ray |
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