CN1314078C - Cd(In,Ga)2O4/MgAl2O4Composite substrate material and preparation method thereof - Google Patents
Cd(In,Ga)2O4/MgAl2O4Composite substrate material and preparation method thereof Download PDFInfo
- Publication number
- CN1314078C CN1314078C CNB2004100671318A CN200410067131A CN1314078C CN 1314078 C CN1314078 C CN 1314078C CN B2004100671318 A CNB2004100671318 A CN B2004100671318A CN 200410067131 A CN200410067131 A CN 200410067131A CN 1314078 C CN1314078 C CN 1314078C
- Authority
- CN
- China
- Prior art keywords
- mgal
- film
- single crystalline
- lining material
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 96
- 239000000758 substrate Substances 0.000 title claims abstract description 53
- 239000000463 material Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910052738 indium Inorganic materials 0.000 claims abstract description 95
- 229910020068 MgAl Inorganic materials 0.000 claims abstract description 61
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000004549 pulsed laser deposition Methods 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 230000005284 excitation Effects 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 230000003760 hair shine Effects 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims 3
- 230000008025 crystallization Effects 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000005245 sintering Methods 0.000 claims 1
- 239000007790 solid phase Substances 0.000 claims 1
- 238000010189 synthetic method Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 7
- 229910052596 spinel Inorganic materials 0.000 abstract description 6
- 229910026161 MgAl2O4 Inorganic materials 0.000 abstract 4
- 239000002131 composite material Substances 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000010792 warming Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Cd (In, Ga)2O4/MgAl2O4The composite substrate material is MgAl2O4A layer of Cd (In, Ga) O is arranged on the single crystal4And (4) forming a covering layer. The preparation method of the composite substrate material comprises the following steps: by pulse laser deposition on MgAl2O4(111) Formation of Cd (In, Ga) O on single crystal substrate4A covering layer is formed on the MgAl layer by annealing process2O4(111) Obtaining crystallized Cd (In, Ga) O from single crystal substrate4(111) A film. The preparation process of the composite substrate material is simple and easy to operate, and the composite substrate Cd (In, Ga) with the structure2O4/MgAl2O4Is suitable for the epitaxial growth of high-quality GaN.
Description
Technical field
The present invention relates to the epitaxial growth of InN-GaN base blue-light semiconductor, particularly a kind of for the InN-GaN base epitaxially grown Cd of blue-light semiconductor (In, Ga)
2O
4/ MgAl
2O
4Compound lining material and preparation method thereof.
Background technology
The broad-band gap III-V group iii v compound semiconductor material that with GaN is representative is receiving increasing concern, they will be at blue, green light LED (LEDs) and laser diode (LDs), high density information read-write, subsurface communication, deep quest, laser printing, biology and engineering in medicine, and ultrahigh speed microelectronic component and hyperfrequency microwave device aspect are with a wide range of applications.
Because GaN fusing point height, hardness is big, saturated vapor pressure is high, so want the GaN body monocrystalline of growing large-size to need high temperature and elegance, Polish high pressure research center has made just under the high pressure of 1600 ℃ high temperature and 20kbar that bar is wide to be the GaN body monocrystalline of 5mm.At present, the technology of GaN body monocrystalline of growing large-size more immature, and the cost height of growth, from practical application quite long distance is arranged still.
Sapphire crystal (α-Al
2O
3), be easy to preparation, low price, and have the good characteristics such as high-temperature stability, α-Al
2O
3It is at present the most frequently used InN-GaN epitaxial substrate material (referring to Jpn.J.Appl.Phys., the 36th volume,, the 1568th page in 1997).
MgAl
2O
4Crystal belongs to cubic system, spinel structure, and lattice paprmeter is 0.8083nm, fusing point is 2130 ℃.Because of MgAl
2O
4The lattice mismatch of crystal and GaN reaches 9%, and its bulk properties is not as α-Al
2O
3Turn round and look at seldom and use.
At present, typical GaN base blue-ray LED is made on Sapphire Substrate.Its structure is as follows from top to bottom: p-GaN/AlGaN barrer layer/InGaN-GaN quantumwells/AlGaN barrier layer/n-GaN/4 μ m GaN.Because sapphire has high resistivity, so the n-type of device and p-type electrode must be drawn from the same side.This has not only increased the manufacture difficulty of device, has also increased the volume of device simultaneously.According to interrelated data, for the Sapphire Substrate of a slice 2 inches diameter size, present technology can only be produced about about 10,000 of GaN device, and if backing material has suitable conductivity, then when simplifying device making technics, its number can increase to present 3-4 doubly.
In sum, technology substrate (α-Al formerly
2O
3And MgAl
2O
4) there is a remarkable shortcoming:
(1) with α-Al
2O
3Make substrate, α-Al
2O
3And the lattice mismatch between the GaN is that the GaN film of preparation has higher dislocation density and a large amount of point defects up to 14%;
(2) because MgAl
2O
4The lattice mismatch of crystal and GaN reaches 9%, adds combination property not as α-Al
2O
3, thereby use less;
(3) above transparent oxide substrate is all non-conductive, and the element manufacturing difficulty is big, has also increased the volume of device simultaneously, has caused the waste of great deal of raw materials.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the shortcoming of above-mentioned prior art, provides a kind of as the InN-GaN base epitaxially grown Cd of blue-light semiconductor (In, Ga)
2O
4/ MgAl
2O
4Compound lining material and preparation method thereof.
Cd of the present invention (In, Ga)
2O
4/ MgAl
2O
4Compound lining material is actually at MgAl
2O
4Monocrystalline is provided with one deck Cd (In, Ga)
2O
4And consist of, this compound substrate is suitable for epitaxial growth high quality InV-GaN base blue-light semiconductor film.
Cd (In, Ga)
2O
4CdIn
2O
4And CdGa
2O
4Formed solid solution compound belongs to cubic system, spinel structure.Cd (In, Ga)
2O
4(111) lattice mismatch with GaN is very little, works as CdIn
2O
4And CdGa
2O
4When forming solid solution in the proper ratio, its (111) face can with the GaN Perfect Matching, but because Cd (In, Ga)
2O
4Large scale bulk growth difficulty, the present invention proposes to utilize the method for pulsed laser deposition, at MgAl
2O
4Cd (In, Ga) grows on the single crystalline substrate
2O
4Cover layer, thus Cd (In, Ga) obtained
2O
4/ MgAl
2O
4Compound substrate.Here, MgAl
2O
4Monocrystalline works the Cd (In, Ga) that supports on it
2O
4The effect of transparent conductive film.The compound substrate of this kind structure [Cd (In, Ga)
2O
4/ MgAl
2O
4] be suitable for the high-quality GaN of epitaxial growth.
Technical solution of the present invention is:
A kind of Cd (In, Ga)
2O
4/ MgAl
2O
4The preparation method of compound lining material mainly is to utilize the pulsed laser deposition method at MgAl
2O
4Prepare Cd (In, Ga) on the single crystalline substrate
2O
4Film is by high annealing, at MgAl
2O
4Form Cd (In, Ga) on the single crystalline substrate
2O
4The monocrystalline cover layer.
Cd of the present invention (In, Ga)
2O
4/ MgAl
2O
4The preparation material preparation method of compound lining material is characterized in that it comprises following concrete steps:
＜1〉at MgAl
2O
4Prepare Cd (In, Ga) on the single crystalline substrate
2O
4Film: the MgAl that will polish, cleaned
2O
4Single crystalline substrate is sent into the pulsed laser deposition system, Cd (In, Ga)
2O
4Cd (In, Ga) is adopted in the source
2O
4Polycrystal target; Adopt the KrF excimer laser of pulsewidth 25-30ns, excitation wavelength is 248nm, and scioptics are with about 10J/cm
2Energy density optically focused, the Cd (In, Ga) in optical window shines vacuum plant
2O
4Target is under the reaction atmosphere of oxygen enrichment, at heated MgAl
2O
4Deposit Cd (In, Ga) on the single crystalline substrate
2O
4Film, thickness is greater than 100nm.
＜2〉high annealing: with the Cd (In, Ga) that obtains
2O
4/ MgAl
2O
4Sample is put into annealing furnace, heats up, and under the atmosphere of 700～1500 ℃ and oxygen enrichment, annealing in process obtains Cd (In, Ga)
2O
4The cover layer of monocrystalline forms Cd (In, Ga)
2O
4/ MgAl
2O
4Compound lining material.
Described Cd (In, Ga)
2O
4Raw materials used and the ratio of polycrystal target is CdO: In
2O
3: Ga
2O
3=2: 1: 1, the purity of gained polycrystal target was better than 99.999%.
Optimum temperature in the described The high temperature anneal, annealing furnace is 1000 ℃.
Characteristics of the present invention are:
(1) proposed a kind of for the InN-GaN base epitaxially grown Cd of blue-light semiconductor (In, Ga)
2O
4Backing material, this substrate is compared with substrate formerly, and the lattice mismatch of itself and GaN (111) is little, and the ratio of appropriate change Mg and Cd can make itself and lattice with GaN (111) be complementary, and this material is the transparent conductive oxide material.
(2) the present invention proposes to utilize pulsed laser deposition (PLD) technology, at MgAl
2O
4Generate Cd (In, Ga) on the single crystalline substrate
2O
4Cover layer, thus Cd (In, Ga) obtained
2O
4/ MgAl
2O
4Compound substrate, the preparation technology of this compound substrate is simple, easy to operate, the compound substrate of this kind structure [Cd (In, Ga)
2O
4/ MgAl
2O
4] be suitable for the epitaxial growth of high-quality GaN.
Description of drawings
Fig. 1 is the schematic diagram of pulsed laser deposition (PLD) system.
Embodiment
Fig. 1 is the schematic diagram of pulsed laser deposition (PLD) system.The mechanism of PLD is at first to be that the laser scioptics of 248nm are with about 10J/cm with the KrF excimer laser wavelength of pulsewidth 25-30ns
2Energy density optically focused, the Cd (In, Ga) in optical window shines vacuum plant
2O
4Polycrystal target, behind the target absorbing laser, owing to Electron Excitation becomes high temperature fused state, material surface tens nanometer (nm) is evaporated, gasiform particulate is released and is diffused with column, at the suitable heated MgAl that places from several centimeters of target
2O
4On the single crystalline substrate, thereby adhere to, the accumulation deposit becomes Cd (In, Ga)
2O
4Film.Thickness is greater than 100nm.
Pulsed laser deposition of the present invention (LPD) technology prepares compound lining material Cd (In, Ga)
2O
4/ MgAl
2O
4The concrete technology flow process as follows:
＜1〉MgAl that will polish, cleaned
2O
4Single crystalline substrate is sent into pulsed laser deposition PLD system and is prepared Cd (In, Ga)
2O
4Film is at MgAl
2O
4Prepare Cd (In, Ga) on the single crystalline substrate
2O
4Film, Cd (In, Ga)
2O
4The Cd (In, Ga) more than 99.999% is adopted in the source
2O
4Polycrystal target, target is raw materials used to be CdO: In
2O
3: Ga
2O
3=2: 1: 1.System adopts the KrF excimer laser of pulsewidth 25-30ns, and excitation wavelength is 248nm, and scioptics are with about 10J/cm
2Energy density optically focused, shine Cd (In, Ga) in the vacuum plant through optical window
2O
4Target, deposit Cd (In, Ga) under the atmosphere of oxygen enrichment
2O
4Film, thickness is greater than 100nm.
＜2〉then with the Cd (In, Ga) that obtains in the upper step
2O
4/ MgAl
2O
4Sample is put into annealing furnace, 700～1500 ℃ of annealing, can obtain Cd (In, Ga)
2O
4The monocrystalline cover layer, thereby obtained Cd (In, Ga)
2O
4/ MgAl
2O
4Compound substrate.The compound substrate of this kind structure is suitable for epitaxial growth of high quality GaN.
Prepare Cd (In, Ga) with pulsed laser deposition shown in Figure 1 (PLD) experimental provision
2O
4/ MgAl
2O
4The method of compound lining material is described as follows with preferred embodiment:
Embodiment 1:
With the MgAl that polishes, cleaned
2O
4Single crystalline substrate is sent into pulsed laser deposition PLD system and is prepared Cd (In, Ga)
2O
4Film, Cd (In, Ga)
2O
4The Cd (In, Ga) more than 99.999% is adopted in the source
2O
4Polycrystal target.System adopts the KrF excimer laser of pulsewidth 25-30ns, and excitation wavelength is 248nm, and scioptics are with about 10J/cm
2Energy density optically focused, shine Cd (In, Ga) in the vacuum plant through optical window
2O
4Target, deposit Cd (In, Ga) under the atmosphere of oxygen enrichment
2O
4Film, MgAl
2O
4The single crystalline substrate temperature is 300 ℃, control Cd (In, Ga)
2O
4The thickness of film is 300nm.Then with the Cd (In, Ga) that obtains in the upper step
2O
4/ MgAl
2O
4Sample is put into annealing furnace, is warming up to 1000 ℃ of annealing in process, namely obtains Cd (In, Ga)
2O
4The monocrystalline cover layer, thereby obtain Cd (In, Ga)
2O
4/ MgAl
2O
4Compound substrate.The compound substrate of this kind structure is suitable for epitaxial growth of high quality GaN.
Embodiment 2:
With the MgAl that polishes, cleaned
2O
4Single crystalline substrate is sent into pulsed laser deposition PLD system and is prepared Cd (In, Ga)
2O
4Film, Cd (In, Ga)
2O
4The Cd (In, Ga) more than 99.999% is adopted in the source
2O
4Polycrystal target.System adopts the KrF excimer laser of pulsewidth 25-30ns, and excitation wavelength is 248nm, and scioptics are with about 10J/cm
2Energy density optically focused, shine Cd (In, Ga) in the vacuum plant through optical window
2O
4Target, deposit Cd (In, Ga) under the atmosphere of oxygen enrichment
2O
4Film, MgAl
2O
4The single crystalline substrate temperature is 100 ℃, control Cd (In, Ga)
2O
4The thickness of film is 100nm.Then with the Cd (In, Ga) that obtains in the upper step
2O
4/ MgAl
2O
4Sample is put into annealing furnace, is warming up to 700 ℃ of annealing in process, namely obtains Cd (In, Ga)
2O
4The monocrystalline cover layer, thereby obtain Cd (In, Ga)
2O
4/ MgAl
2O
4Compound substrate.The compound substrate of this kind structure is suitable for epitaxial growth of high quality GaN.
Embodiment 3:
With the MgAl that polishes, cleaned
2O
4Single crystalline substrate is sent into pulsed laser deposition PLD system and is prepared Cd (In, Ga)
2O
4Film, Cd (In, Ga)
2O
4The Cd (In, Ga) more than 99.999% is adopted in the source
2O
4Polycrystal target.System adopts the KrF excimer laser of pulsewidth 25-30ns, and excitation wavelength is 248nm, and scioptics are with about 10J/cm
2Energy density optically focused, shine Cd (In, Ga) in the vacuum plant through optical window
2O
4Target, deposit Cd (In, Ga) under the atmosphere of oxygen enrichment
2O
4Film, MgAl
2O
4The single crystalline substrate temperature is 300 ℃, control Cd (In, Ga)
2O
4The thickness of film is 500nm.Then with the Cd (In, Ga) that obtains in the upper step
2O
4/ MgAl
2O
4Sample is put into annealing furnace, is warming up to 1500 ℃ of annealing in process, namely obtains Cd (In, Ga)
2O
4The monocrystalline cover layer, thereby obtain Cd (In, Ga)
2O
4/ MgAl
2O
4Compound substrate.The compound substrate of this kind structure is suitable for epitaxial growth of high quality GaN.
Claims (6)
1, a kind of Cd (In, Ga)
2O
4/ MgAl
2O
4Compound lining material is characterized in that at MgAl
2O
4Monocrystalline is provided with one deck Cd (In, Ga)
2O
4, consist of Cd (In, Ga)
2O
4/ MgAl
2O
4Compound substrate.
2, the described Cd of claim 1 (In, Ga)
2O
4/ MgAl
2O
4The preparation method of compound lining material is characterized in that utilizing the pulsed laser deposition method at MgAl
2O
4Prepare Cd (In, Ga) on the single crystalline substrate
2O
4Film, and then by high annealing, at MgAl
2O
4Form the crystallization film on the single crystalline substrate.
3, Cd according to claim 2 (In, Ga)
2O
4/ MgAl
2O
4The preparation method of compound lining material is characterized in that described pulsed laser deposition method is to utilize the KrF PRK of pulsewidth 25-30ns, and scioptics are with 10J/cm
2Energy density optically focused, the Cd (In, Ga) in optical window shines vacuum plant
2O
4The source, this Cd (In, Ga)
2O
4The source is evaporated, at the MgAl of heating
2O
4On the single crystalline substrate, deposit becomes Cd (In, Ga)
2O
4Film, thickness is greater than 100nm.
4, Cd according to claim 2 (In, Ga)
2O
4/ MgAl
2O
4The preparation method of compound lining material is characterized in that it comprises following concrete steps:
＜1〉at MgAl
2O
4Prepare Cd (In, Ga) on the single crystalline substrate
2O
4Film: the MgAl that will polish, cleaned
2O
4Single crystalline substrate is sent into the pulsed laser deposition system, utilizes Cd (In, Ga)
2O
4Target, the KrF excimer laser of employing pulsewidth 25-30ns, excitation wavelength is 248nm, scioptics are with 10J/cm
2Energy density optically focused, the Cd (In, Ga) in optical window shines vacuum plant
2O
4Target is under the reaction atmosphere of oxygen enrichment, at the MgAl of heating
2O
4Deposit Cd (In, Ga) on the single crystalline substrate
2O
4Film, thickness is greater than 100nm.
＜2〉Cd (In, Ga)
2O
4The crystallization of film: with the Cd (In, Ga) that obtains
2O
4/ MgAl
2O
4Sample is put into annealing furnace, heats up, and anneals at 700～1500 ℃, obtains Cd (In, Ga)
2O
4The crystallization layer forms Cd (In, Ga)
2O
4/ MgAl
2O
4Compound lining material.
5, Cd according to claim 2 (In, Ga)
2O
4/ MgAl
2O
4The preparation method of compound lining material is characterized in that earlier with the synthetic Cd (In, Ga) of solid-phase sintering synthetic method
2O
4Target, target is raw materials used to be CdO: In
2O
3: Ga
2O
3=2: 1: 1.
6, Cd according to claim 2 (In, Ga)
2O
4/ MgAl
2O
4The preparation method of compound lining material, the temperature that it is characterized in that described high annealing is 1000 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100671318A CN1314078C (en) | 2004-10-13 | 2004-10-13 | Cd(In,Ga)2O4/MgAl2O4Composite substrate material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100671318A CN1314078C (en) | 2004-10-13 | 2004-10-13 | Cd(In,Ga)2O4/MgAl2O4Composite substrate material and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1588615A CN1588615A (en) | 2005-03-02 |
| CN1314078C true CN1314078C (en) | 2007-05-02 |
Family
ID=34604123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100671318A Expired - Fee Related CN1314078C (en) | 2004-10-13 | 2004-10-13 | Cd(In,Ga)2O4/MgAl2O4Composite substrate material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1314078C (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196648A (en) * | 1992-12-25 | 1994-07-15 | Fuji Xerox Co Ltd | Oriented ferroelectric thin film device |
| JPH07133188A (en) * | 1993-11-08 | 1995-05-23 | Fuji Xerox Co Ltd | Production of ferroelectric thin film having orientation property |
| US6278138B1 (en) * | 1998-08-28 | 2001-08-21 | Sony Corporation | Silicon-based functional matrix substrate and optical integrated oxide device |
| CN1482689A (en) * | 2003-07-29 | 2004-03-17 | 中国科学院上海光学精密机械研究所 | MgIn2O4/MgO composite substrate material and preparation method thereof |
-
2004
- 2004-10-13 CN CNB2004100671318A patent/CN1314078C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196648A (en) * | 1992-12-25 | 1994-07-15 | Fuji Xerox Co Ltd | Oriented ferroelectric thin film device |
| JPH07133188A (en) * | 1993-11-08 | 1995-05-23 | Fuji Xerox Co Ltd | Production of ferroelectric thin film having orientation property |
| US6278138B1 (en) * | 1998-08-28 | 2001-08-21 | Sony Corporation | Silicon-based functional matrix substrate and optical integrated oxide device |
| CN1482689A (en) * | 2003-07-29 | 2004-03-17 | 中国科学院上海光学精密机械研究所 | MgIn2O4/MgO composite substrate material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1588615A (en) | 2005-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Özgür et al. | A comprehensive review of ZnO materials and devices | |
| TWI246116B (en) | Process for growing ZnSe Epitaxy layer on Si substrate and semiconductor structure thereby | |
| CN107104175B (en) | Semiconductor devices and the method being used for producing the semiconductor devices | |
| KR100894878B1 (en) | Method for fabrication of group ? nitride semiconductor | |
| Chen et al. | ZnO thin films synthesized by chemical vapor deposition | |
| JPH08288220A (en) | Device that has iii-v genus nitride semiconductor material on substrate | |
| CN111886368B (en) | Group 13 element nitride layer, free-standing substrate, functional element, and method for producing group 13 element nitride layer | |
| CN103633200A (en) | Method for manufacturing gallium-nitride-based light emitting diode devices with vertical structures by aid of silicon substrates | |
| CN1694225A (en) | GaN/β－Ga2O3Composite substrate material and preparation method thereof | |
| CN100545314C (en) | Be used to prepare the in-situ treatment method of sapphire substrate of high-quality zinc oxide film | |
| CN1564314A (en) | Method of preparing high quality zinc oxide based monocrystal thin film | |
| WO2024056041A1 (en) | Epitaxial chip structure | |
| CN1314078C (en) | Cd(In,Ga)2O4/MgAl2O4Composite substrate material and preparation method thereof | |
| CN1295747C (en) | (Mg,Cd)In2O4/MgAl2O4Composite substrate material and preparation method thereof | |
| CN1210817C (en) | MgIn2O4/MgO composite substrate material and preparation method thereof | |
| CN1309020C (en) | A method for preparing high-quality ZnO single crystal film on magnesium aluminate substrate | |
| CN1610057A (en) | Cd1+xIn2－2xSnxO4/MgAl2O4Composite substrate material and preparation method thereof | |
| CN1529366A (en) | MgIn2O4/MgAl2O4Composite substrate material and preparation method thereof | |
| CN1219334C (en) | γ－LiAlO2/α－Al2O3Flexible substrate material and preparation method thereof | |
| Piquette et al. | Effect of buffer layer and III/V ratio on the surface morphology of GaN grown by MBE | |
| CN1523640A (en) | Composite substrate material suitable for InN-GaN epitaxial growth and preparation method thereof | |
| US8026517B2 (en) | Semiconductor structures | |
| CN1527412A (en) | MgIn with conductive spinel structure2O4/MgO composite substrate material and preparation method thereof | |
| CN1322175C (en) | Preparation of gamma-LiAlO by pulsed laser deposition2Method for covering substrate with single crystal thin film | |
| CN110931607A (en) | Silicon-based stress covariant substrate and preparation method thereof, gallium nitride LED and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070502 Termination date: 20101013 |