CN1523640A - Composite backing material adapted for InN-GaN epitaxial growth and method for making same - Google Patents
Composite backing material adapted for InN-GaN epitaxial growth and method for making same Download PDFInfo
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- CN1523640A CN1523640A CNA031508286A CN03150828A CN1523640A CN 1523640 A CN1523640 A CN 1523640A CN A031508286 A CNA031508286 A CN A031508286A CN 03150828 A CN03150828 A CN 03150828A CN 1523640 A CN1523640 A CN 1523640A
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- gan
- mgin
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Abstract
A compound substrate material suitable for InN-GaN epitaxial growth is to set a layer of MgIn2O4 o MgO single crystal. The preparation method is to put mixed ingots of MgIn2O4 and In2o3 with gas holes in a Pt pot, put or hang a MgO wafer of double or single polish on Pt silk added by a Pt plates covered by mixed powders of MgIn2O4 and In2O3 and cover the pot closely by a Pt cover then put it in a resistance furnace, heating up to 800~1400deg.c. kept constant for 20~100h, the In2O3 is reacted with MgO in solid phase by In3+ ionic diffusion to get the said material.
Description
Technical field
The present invention relates to the InN-GaN epitaxial growth, particularly a kind of epitaxially grown compound lining material of InN-GaN and preparation method thereof that is applicable to.
Background technology
III hi-nitride semiconductor material InN-GaN has excellent characteristic, as the optical transition probability of stable physics and chemical property, high thermal conductance and high electron saturation velocities, direct band gap material a high order of magnitude than indirect band gap, therefore, broad-band gap InN-GaN base semiconductor is demonstrating wide application prospect aspect short-wave long light-emitting diode, laser and ultraviolet detector and the high-temperature electronic device.Because the InN-GaN fusing point is higher, N
2The big InN-GaN body single crystal preparation of saturated vapor pressure is very difficult, so InN-GaN generally grows with epitaxy technology on foreign substrate.
Sapphire crystal (α-Al
2O
3), be easy to preparation, low price, and have the good characteristics such as high-temperature stability, α-Al
2O
3It is at present the most frequently used InN-GaN epitaxial substrate material (referring to Jpn.J.Appl.Phys., the 36th volume,, the 1568th page in 1997).
The MgO crystal belongs to cubic system, and NaCl type structure, lattice constant are 0.4126nm.Fusing point is 2800 ℃.Because the lattice mismatch of MgO crystal and GaN reaches 13%, and not enough stable in MOCVD atmosphere, thereby use less.
At present, typical GaN base blue-ray LED is made on Sapphire Substrate.(from top to bottom) is as follows for its structure: p-GaN/AlGaN barrier layer/InGaN-GaN quantumwells/AlGaN barrier layer/n-GaN/4um GaN.Because sapphire has high resistivity, so the n-type of device and p-type electrode must be drawn from the same side.This has not only increased the manufacture difficulty of device, has also increased the volume of device simultaneously.According to interrelated data, for the Sapphire Substrate of a slice 2 inches diameter size, present technology can only be produced about about 10,000 of GaN device, and if backing material has suitable conductivity, then when simplifying device making technics, its number can increase to present 3～4 times.
In sum, above-mentioned substrate (α-Al
2O
3And MgO) the remarkable shortcoming that exists is:
(1) with α-Al
2O
3Make substrate, α-Al
2O
3And the lattice mismatch between the GaN makes the GaN film of preparation have higher dislocation density and a large amount of point defects up to 14%;
(2) because the lattice mismatch of MgO crystal and GaN reaches 13%, and stable inadequately in MOCVD atmosphere, thereby use less;
(3) above transparent oxide substrate is all non-conductive, and the element manufacturing difficulty is big, has also increased the volume of device simultaneously, has caused the waste of great deal of raw materials.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the defective of above-mentioned prior art, and epitaxially grown compound lining material of a kind of InN-GaN of being applicable to and preparation method thereof is provided.
Technical solution of the present invention is as follows:
A kind of epitaxially grown compound lining material of InN-GaN that is applicable to, it is at the MgO monocrystalline one deck MgIn to be set
2O
4And consist of.
The described preparation method who is applicable to the epitaxially grown compound lining material of InN-GaN comprises following concrete steps:
1. in platinum crucible, be placed with the MgIn with pore
2O
4And In
2O
3Mixture block;
2. with the MgO wafer of twin polishing or single-sided polishing, put or hang on the platinum wire, add a cover the platinum sheet, be coated with again MgIn
2O
4And In
2O
3Mixed powder plugs a thermocouple, and it is airtight that the crucible top adds the platinum lid, places then resistance furnace;
3. resistance furnace is heated to 800～1400 ℃, constant temperature 20～100 hours, In
2O
3Be diffused in the MgO wafer, thereby obtained being applicable to the epitaxially grown compound lining material of InN-GaN.
Described MgIn
2O
4And In
2O
3The weight ratio of mixture block is:
MgIn
2O
4∶In
2O
3＝(0～95％)∶(100～5％)。
Described resistance furnace also can silicon carbide rod furnace or the replacement of Si-Mo rod stove.
Compound lining material (MgIn of the present invention
2O
4/ MgO) be to utilize vapor transport equilibration (VaporTransport Equilibration, be called for short VTE) technology, in the atmosphere of high temperature, rich indium, pass through In
3+The diffusion of ion makes In
2O
3With the MgO solid phase reaction, preparation has MgIn
2O
4Tectal MgO compound lining material.
Characteristics of the present invention are: (1) has proposed a kind of for the epitaxially grown MgIn of InN-GaN base blue-light semiconductor
2O
4Backing material, this substrate is compared with substrate formerly, and the lattice mismatch of itself and GaN (111) is littler, be 1.1%, and this material is the transparent conductive oxide material.
(2) the present invention proposes to utilize vapor transport equilibration (VTE) technology, In
2O
3And the solid phase reaction between the MgO generates MgIn in the MgO single crystalline substrate
2O
4Cover layer, thus MgIn obtained
2O
4/ MgO compound substrate, the preparation technology of this compound substrate is simple, easy to operate, the compound substrate MgIn of this kind structure
2O
4/ MgO is suitable for the epitaxial growth of high-quality GaN.
Description of drawings
Fig. 1 is a vapor transport equilibration experimental provision schematic diagram.
Embodiment
Used vapor transport equilibration (VTE) technology of the present invention prepares compound lining material MgIn
2O
4The experimental provision schematic diagram of/MgO is seen Fig. 1, in the platinum crucible 1, is placed with the MgIn with certain proportioning of pore 2
2O
4And In
2O
3Mixture block 3, material piece 3 tops are platinum wires 4, and the MgO wafer 5 of twin polishing or single-sided polishing places on the platinum wire 4, and platinum sheet 6 and MgIn are arranged at material piece 3 tops
2O
4And In
2O
3Mixed powder 7 covers, and thermocouple 8 inserts in the powders 7, and crucible 1 top adds platinum and covers 9 airtight.
Vapor transport equilibration (VTE) technology is a kind of mass transport process, so the crucible planted agent ensures enough In
2O
3Supply, secondly, the balance of gas phase is to rely on In
2O
3Continuously from MgIn
2O
4And In
2O
3Volatilization is kept in the mixture block, for preventing mixture block surface In
2O
3Exhaust the balance that causes and destroy, should make mixture block have loose structure, to increase In as far as possible
2O
3Evaporation surface.
Magnesium oxide (MgO) wafer places or is suspended from the airtight platinum crucible, then airtight platinum crucible is put into electric furnace (silicon carbide rod furnace or Si-Mo rod stove), be heated to predetermined equilibrium temperature, the insulation regular hour is carried out the gas-liquid equilibrium diffusion, in order to accelerate diffusion process and structural adjustment process, should choose high as far as possible equilibrium temperature, generally choose 800～1400 ℃.
Vapor transport equilibration of the present invention (VTE) technology prepares compound lining material MgIn
2O
4The concrete technology flow process of/MgO is as follows:
＜1〉in platinum crucible 1, is placed with the MgIn with pore 2
2O
4And In
2O
3Mixture block 3 is chosen MgIn
2O
4: In
2O
3=(0～95%): (100～5%) weight ratio.
＜2〉with the MgO wafer 5 of twin polishing or single-sided polishing, place or be suspended from the platinum wire 4, add to be coated with MgIn
2O
4And In
2O
3The platinum sheet 6 of mixed powder 7 (proportioning with 3) and thermocouple 8, crucible top add platinum and cover 9 airtightly, place resistance furnace.
＜3〉be heated to about 800～1400 ℃ constant temperature 20～100 hours, In
2O
3Be diffused in the MgO wafer, thereby obtained being applicable to the epitaxially grown MgIn of InN-GaN
2O
4/ MgO
3Compound lining material.
Be applicable to the epitaxially grown MgIn of InN-GaN with above-mentioned vapor transport equilibration experimental provision and concrete technological process preparation
2O
4The specific embodiment of/MgO compound lining material is as follows: in the golden crucible 1 of φ 100 * 80mm, be placed with the MgIn with pore 2
2O
4And In
2O
3Mixture block 3 is chosen [MgIn
2O
4]/[In
2O
3]=75: 25 weight ratio.The MgO wafer 5 of twin polishing or single-sided polishing is placed or is suspended from the platinum wire 4, add to be coated with MgIn
2O
4And In
2O
3The crucible cover 6 of mixed powder and thermocouple, crucible top add platinum and cover 9 airtightly, place resistance furnace.The heating resistor stove is warming up to 900 ℃, constant temperature 100 hours, In
2O
3Be diffused in the MgO wafer.Thereby obtained being applicable to the epitaxially grown compound lining material of InN-GaN.This compound substrate can be used for growing high-quality InN-GaN thin film epitaxial growth.
Claims (4)
1, a kind of epitaxially grown compound lining material of InN-GaN that is applicable to is characterized in that it is to be provided with one deck MgIn at the MgO monocrystalline
2O
4And consist of.
2, the epitaxially grown compound lining material preparation method of InN-GaN that is applicable to according to claim 1 is characterized in that it comprises following concrete steps:
1. in platinum crucible (1), be placed with the MgIn of band pore (2)
2O
4And In
2O
3Mixture block (3);
2. with the MgO wafer (5) of twin polishing or single-sided polishing, put or hang on the platinum wire (4), add a cover platinum sheet (6), be coated with again MgIn
2O
4And In
2O
3Mixed powder (7) plugs a thermocouple (8), and it is airtight that crucible (1) top adds platinum lid (9), places then resistance furnace;
3. resistance furnace is heated to 800～1400 ℃, constant temperature 20～100 hours, In
2O
3Be diffused in the MgO wafer, thereby obtained being applicable to the epitaxially grown compound lining material of InN-GaN.
3, the preparation method who is applicable to the epitaxially grown compound lining material of InN-GaN according to claim 2 is characterized in that described MgIn
2O
4And In
2O
3The weight ratio of mixture block (3) is:
MgIn
2O
4∶In
2O
3＝(0～95％)∶(100～5％)。
4, the preparation method who is applicable to the epitaxially grown compound lining material of InN-GaN according to claim 2 is characterized in that described resistance furnace also can silicon carbide rod furnace or the replacement of Si-Mo rod stove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031508286A CN1523640A (en) | 2003-09-05 | 2003-09-05 | Composite backing material adapted for InN-GaN epitaxial growth and method for making same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031508286A CN1523640A (en) | 2003-09-05 | 2003-09-05 | Composite backing material adapted for InN-GaN epitaxial growth and method for making same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1523640A true CN1523640A (en) | 2004-08-25 |
Family
ID=34286777
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA031508286A Pending CN1523640A (en) | 2003-09-05 | 2003-09-05 | Composite backing material adapted for InN-GaN epitaxial growth and method for making same |
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|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1322175C (en) * | 2004-09-28 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | Preparation for r-Li ALO2 single-crystal thin-film covering layer substrate by pulsing laser deposition |
| CN1322176C (en) * | 2004-09-28 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | Preparation for single-crystal thin film covering layer substrate with r-LiALO2 |
-
2003
- 2003-09-05 CN CNA031508286A patent/CN1523640A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1322175C (en) * | 2004-09-28 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | Preparation for r-Li ALO2 single-crystal thin-film covering layer substrate by pulsing laser deposition |
| CN1322176C (en) * | 2004-09-28 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | Preparation for single-crystal thin film covering layer substrate with r-LiALO2 |
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