CN1312483A

CN1312483A - Manufacture of color liquid crystal pixel driven transistor

Info

Publication number: CN1312483A
Application number: CN 01108132
Authority: CN
Inventors: 秦明
Original assignee: Southeast University
Current assignee: Southeast University
Priority date: 2001-03-15
Filing date: 2001-03-15
Publication date: 2001-09-12
Anticipated expiration: 2021-03-15
Also published as: CN1127674C

Abstract

The production method of high-performance colour liquid crystal display pixel drive transistor includes the following steps: (1). making cleaned (100) type monocrystal silicon wafer and glass mutually stick together and standing still for 1-5 hr.; (2). adopting static bonding process to make silicon wafer and glass form excellent binding; (3) adopting chemical and mechanial polishing method to thin the monocrystal silicon wafer to thickness of 10-20 micrometers; (4). photoetching and etching monocrystal silicone film on the glass to form device island; and (5). adopting low-temp. film transistor production process to manufacture MOS transistor on these inslands.

Description

The manufacture method of color liquid crystal pixel driven transistor

The present invention is a kind of manufacture method of colour liquid crystal display device pixel driven transistor.

In field of liquid crystal display, the display quality of color liquid crystal is decided by the switching speed of pixel driven transistor.Traditional pixel driven transistor is to adopt amorphous silicon technology to make, because the electron mobility of amorphous silicon material is very low, so the switching speed of device and on/off are smaller than all; The performance of improving device that develops into of polysilicon technology provides approach.Adopt mobility that technology such as laser annealing can make material near monocrystalline, but along with the increase of the crystallite dimension of polycrystalline silicon material, discontinuity of material also become increasingly conspicuous, thereby has influenced the performance of entire circuit.

It is low to the purpose of this invention is to provide a kind of production cost, improves the manufacture method of polycrystalline silicon material performance and inhomogeneity color liquid crystal pixel driven transistor.

Manufacture method of the present invention is as follows:

After 1. will cleaning-(100) type monocrystalline silicon piece and glass fits together mutually and placed 1-5 hour;

2. adopt the electrostatic bonding method to make silicon chip and glass form good bonding;

3. bonding is good sample is thinned to monocrystalline silicon piece with the method for chemically mechanical polishing 10～20 microns thickness;

4. the monocrystalline silicon membrane on photoetching and the etching glass is to form the device island;

5. adopt the low temperature thin film transistor fabrication on these islands, to make MOS transistor.When electrostatic bonding glass and silicon chip, the bonding voltage that adds is 800～1200 volts, and substrate heating temperature is 300 ℃～600 ℃.

The invention has the advantages that owing to adopt mechanical grinding and polishing process commonly used on the static bonding process of silicon and glass and the semi-conductor industry to replace the laser annealing technique of amorphous silicon, make made technology become simple and cost dwindles significantly.In addition, owing to provide monocrystal material, therefore can make high performance thin film transistor (TFT) and reduce or eliminate the performance difference that adopts between the device that polycrystalline silicon material makes.

Present technique adopts single crystal silicon material directly at formation driving transistors on glass, can solve the contradiction between above-mentioned polycrystalline silicon material performance and the homogeneity.

Fig. 1 is a structural representation of the present invention.Glass 1, device island 2 are wherein arranged.

Embodiment of the present invention are as follows:

The camera preparation of LCD: at first with ordinary plate glass and the direct electrostatic bonding of silicon chip that needs size, this glass is as the backboard of LCD.Silicon chip is thinned to 10 to 20 microns thickness and polishing with the method for mechanical grinding and polishing.The silicon fiml that adopts the method for photoetching will need do in the future dot matrix is then carved and is gone, and lithographic method can be an also chemical corrosion method of plasma method.Adopt the thin film transistor (TFT) preparation technology who is lower than 600 degree on remaining silicon fiml, to make driving circuit then.After circuit was finished, circuit surface covered the layer of transparent insulating material, and then did the transparent bottom electrode part of excitation liquid crystal.Top electrode is beforehand with on face glass, after filling liquid crystal material with between upper/lower electrode, has just formed the visual LCD with transmission mode work like this.

Claims

1. the manufacture method of a color liquid crystal pixel driven transistor is characterized in that the method for making is as follows:

After 1. will cleaning-(100) type monocrystalline silicon piece and glass (1) fits together mutually and placed 1-5 hour;

4. the monocrystalline silicon membrane on photoetching and the etching glass is to form device island (2);

5. adopt the low temperature thin film transistor fabrication on these islands, to make MOS transistor.

2. the manufacture method of color liquid crystal pixel driven transistor according to claim 1, when it is characterized in that electrostatic bonding glass and silicon chip, the bonding voltage that adds is 800～1200 volts, substrate heating temperature is 300 ℃～600 ℃.