CN1311508C - 用于产生低能量离子束的离子光学装置和方法 - Google Patents

用于产生低能量离子束的离子光学装置和方法 Download PDF

Info

Publication number
CN1311508C
CN1311508C CNB018213774A CN01821377A CN1311508C CN 1311508 C CN1311508 C CN 1311508C CN B018213774 A CNB018213774 A CN B018213774A CN 01821377 A CN01821377 A CN 01821377A CN 1311508 C CN1311508 C CN 1311508C
Authority
CN
China
Prior art keywords
electrode
ion
deceleration
accelerating
decelerating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB018213774A
Other languages
English (en)
Chinese (zh)
Other versions
CN1565043A (zh
Inventor
约翰·H·凯勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
K2 Keller Consulting LLC
Original Assignee
Varian Semiconductor Equipment Associates Inc
K2 Keller Consulting LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc, K2 Keller Consulting LLC filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN1565043A publication Critical patent/CN1565043A/zh
Application granted granted Critical
Publication of CN1311508C publication Critical patent/CN1311508C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
CNB018213774A 2000-11-20 2001-11-20 用于产生低能量离子束的离子光学装置和方法 Expired - Lifetime CN1311508C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71693100A 2000-11-20 2000-11-20
US09/716,931 2000-11-20
PCT/US2001/043205 WO2002043103A2 (en) 2000-11-20 2001-11-20 Extraction and deceleration of low energy beam with low beam divergence

Publications (2)

Publication Number Publication Date
CN1565043A CN1565043A (zh) 2005-01-12
CN1311508C true CN1311508C (zh) 2007-04-18

Family

ID=24880034

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018213774A Expired - Lifetime CN1311508C (zh) 2000-11-20 2001-11-20 用于产生低能量离子束的离子光学装置和方法

Country Status (8)

Country Link
US (1) US6838677B2 (enExample)
EP (1) EP1336188B1 (enExample)
JP (1) JP3844301B2 (enExample)
KR (1) KR100843805B1 (enExample)
CN (1) CN1311508C (enExample)
DE (1) DE60104716T2 (enExample)
TW (1) TW543071B (enExample)
WO (1) WO2002043103A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3827132B2 (ja) * 1999-07-30 2006-09-27 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオン注入装置及びイオン注入方法
US7087913B2 (en) * 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
US7598505B2 (en) * 2005-03-08 2009-10-06 Axcelis Technologies, Inc. Multichannel ion gun
US7361913B2 (en) * 2005-04-02 2008-04-22 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control
US7675047B2 (en) * 2005-11-15 2010-03-09 Varian Semiconductor Equipment Associates, Inc. Technique for shaping a ribbon-shaped ion beam
US7339179B2 (en) * 2005-11-15 2008-03-04 Varian Semiconductor Equipment Associates, Inc. Technique for providing a segmented electrostatic lens in an ion implanter
GB0612915D0 (en) * 2006-06-30 2006-08-09 Nordiko Technical Services Ltd Apparatus
KR101350759B1 (ko) * 2006-06-30 2014-01-13 노르디코 테크니컬 서비시즈 리미티드 이온빔 가속 장치
GB0703044D0 (en) * 2007-02-16 2007-03-28 Nordiko Technical Services Ltd Apparatus
KR100978793B1 (ko) 2008-11-19 2010-08-30 한국원자력연구원 다중 전극을 이용한 저에너지·대전류·대면적 빔 제조 장치 및 수송 장치
US7888653B2 (en) * 2009-01-02 2011-02-15 Varian Semiconductor Equipment Associates, Inc. Techniques for independently controlling deflection, deceleration and focus of an ion beam
CN101899645B (zh) * 2009-06-01 2014-05-21 无锡华润上华半导体有限公司 一种离子注入方法
CN101861048B (zh) * 2010-03-05 2012-09-05 哈尔滨工业大学 一种磁透镜下等离子体束聚焦的方法
JP5500500B2 (ja) * 2010-03-11 2014-05-21 日新イオン機器株式会社 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置
US20140127394A1 (en) * 2012-11-07 2014-05-08 Varian Semiconductor Equipment Associates, Inc. Reducing Glitching In An Ion Implanter
CN103779164B (zh) * 2013-11-08 2015-12-02 北京中科信电子装备有限公司 一种离子束减速装置
JP6257411B2 (ja) * 2014-03-27 2018-01-10 住友重機械イオンテクノロジー株式会社 イオン注入装置、最終エネルギーフィルター、及びイオン注入方法
US10074514B1 (en) * 2017-09-08 2018-09-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for improved ion beam current
US11251075B2 (en) * 2018-08-06 2022-02-15 Mattson Technology, Inc. Systems and methods for workpiece processing using neutral atom beams
CN113278930B (zh) * 2021-04-25 2023-04-18 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 一种纳米团簇的束流密度控制装置及其使用方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01209645A (ja) * 1988-02-16 1989-08-23 Toshiba Corp イオン源及び電子銃
CN1132407A (zh) * 1994-11-04 1996-10-02 株式会社日立制作所 表面处理的方法和系统
US5748360A (en) * 1995-03-06 1998-05-05 National Research Institute For Metals Decelerating and focusing ion beam device
US5869838A (en) * 1996-09-11 1999-02-09 Advanced Lithography Group Field composable electrostatic lens system
US5969366A (en) * 1995-11-08 1999-10-19 Applied Materials, Inc. Ion implanter with post mass selection deceleration

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4146810A (en) 1977-12-29 1979-03-27 International Business Machines Corporation Radiation heated acceleration
JPH01132033A (ja) * 1987-11-17 1989-05-24 Hitachi Ltd イオン源及び薄膜形成装置
US4933551A (en) * 1989-06-05 1990-06-12 The United State Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Reversal electron attachment ionizer for detection of trace species
US5196706A (en) 1991-07-30 1993-03-23 International Business Machines Corporation Extractor and deceleration lens for ion beam deposition apparatus
JPH05144397A (ja) 1991-11-20 1993-06-11 Mitsubishi Electric Corp イオン源
US5365070A (en) * 1992-04-29 1994-11-15 The Regents Of The University Of California Negative ion beam injection apparatus with magnetic shield and electron removal means
US5780862A (en) 1994-01-11 1998-07-14 Siess; Harold E. Method and apparatus for generating ions
GB2343547B (en) 1995-11-08 2000-06-21 Applied Materials Inc An ion implanter with substrate neutralizer
GB2307592B (en) 1995-11-23 1999-11-10 Applied Materials Inc Ion implantation apparatus withimproved post mass selection deceleration
US5729028A (en) 1997-01-27 1998-03-17 Rose; Peter H. Ion accelerator for use in ion implanter
KR100249307B1 (ko) 1997-05-13 2000-03-15 윤종용 이온주입설비의 분석기
DE19929278A1 (de) * 1998-06-26 2000-02-17 Nissin Electric Co Ltd Verfahren zum Implantieren negativer Wasserstoffionen und Implantierungseinrichtung
JP2002525820A (ja) 1998-09-24 2002-08-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ イオンビームから中性イオンを選択するために配設されたイオン注入装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01209645A (ja) * 1988-02-16 1989-08-23 Toshiba Corp イオン源及び電子銃
CN1132407A (zh) * 1994-11-04 1996-10-02 株式会社日立制作所 表面处理的方法和系统
US5748360A (en) * 1995-03-06 1998-05-05 National Research Institute For Metals Decelerating and focusing ion beam device
US5969366A (en) * 1995-11-08 1999-10-19 Applied Materials, Inc. Ion implanter with post mass selection deceleration
US5869838A (en) * 1996-09-11 1999-02-09 Advanced Lithography Group Field composable electrostatic lens system

Also Published As

Publication number Publication date
KR20030084901A (ko) 2003-11-01
TW543071B (en) 2003-07-21
WO2002043103A2 (en) 2002-05-30
EP1336188B1 (en) 2004-08-04
US6838677B2 (en) 2005-01-04
EP1336188A2 (en) 2003-08-20
US20020089288A1 (en) 2002-07-11
WO2002043103A8 (en) 2004-02-26
JP3844301B2 (ja) 2006-11-08
WO2002043103A3 (en) 2002-10-17
KR100843805B1 (ko) 2008-07-03
DE60104716D1 (de) 2004-09-09
CN1565043A (zh) 2005-01-12
DE60104716T2 (de) 2005-01-27
JP2004525480A (ja) 2004-08-19

Similar Documents

Publication Publication Date Title
CN1311508C (zh) 用于产生低能量离子束的离子光学装置和方法
US8124946B2 (en) Post-decel magnetic energy filter for ion implantation systems
TWI686840B (zh) 用於離子植入的組合靜電透鏡系統
TWI242788B (en) Electrostatic trap for particles entrained in an ion beam
US6998625B1 (en) Ion implanter having two-stage deceleration beamline
WO1999063572A1 (en) Acceleration and analysis architecture for ion implanter
US9281165B1 (en) Bias electrodes for tandem accelerator
KR102620448B1 (ko) 이온 빔 장치 내의 오염 제어를 위한 장치, 시스템 및 방법
KR100855134B1 (ko) 이온 빔내로 끌려오는 입자들을 제거하기 위한 장치 및 방법
WO2004042772A2 (en) Methods and apparatus for ion beam neutralization in magnets
US6359286B1 (en) Method and apparatus for neutralizing space charge in an ion beam
CN1886817A (zh) 具有质量分离的带状离子束
US7339179B2 (en) Technique for providing a segmented electrostatic lens in an ion implanter
KR20120049883A (ko) 조절 가능한 루버드된 플라즈마 일렉트론 플루드 외피
KR102809176B1 (ko) 이온 주입 시스템용 개선된 전하 스트리핑
CN101322216A (zh) 在离子植入机中提供成段的静电透镜的技术
US7459692B2 (en) Electron confinement inside magnet of ion implanter
JPH04284343A (ja) イオンビーム照射装置及びイオンビーム照射方法
KR980011669A (ko) 범위가 확장된 이온 주입 시스템

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20070418