CN1310279C - 改善离子注入系统中离子群聚的方法和装置 - Google Patents

改善离子注入系统中离子群聚的方法和装置 Download PDF

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Publication number
CN1310279C
CN1310279C CNB028164776A CN02816477A CN1310279C CN 1310279 C CN1310279 C CN 1310279C CN B028164776 A CNB028164776 A CN B028164776A CN 02816477 A CN02816477 A CN 02816477A CN 1310279 C CN1310279 C CN 1310279C
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CN
China
Prior art keywords
ion
buncher
gap
electrode
along path
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Expired - Fee Related
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CNB028164776A
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English (en)
Chinese (zh)
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CN1545721A (zh
Inventor
K·萨亚达特曼德
W·迪维吉里奥
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/14—Vacuum chambers
    • H05H7/18—Cavities; Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H01J2237/04737—Changing particle velocity accelerating with electrostatic means radio-frequency quadrupole [RFQ]

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
CNB028164776A 2001-08-23 2002-08-23 改善离子注入系统中离子群聚的方法和装置 Expired - Fee Related CN1310279C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31439201P 2001-08-23 2001-08-23
US60/314,392 2001-08-23

Publications (2)

Publication Number Publication Date
CN1545721A CN1545721A (zh) 2004-11-10
CN1310279C true CN1310279C (zh) 2007-04-11

Family

ID=23219775

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028164776A Expired - Fee Related CN1310279C (zh) 2001-08-23 2002-08-23 改善离子注入系统中离子群聚的方法和装置

Country Status (6)

Country Link
US (1) US6583429B2 (enExample)
EP (1) EP1419515A1 (enExample)
JP (1) JP4378619B2 (enExample)
CN (1) CN1310279C (enExample)
TW (1) TW584881B (enExample)
WO (1) WO2003019613A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635890B2 (en) * 2001-08-23 2003-10-21 Axcelis Technologies, Inc. Slit double gap buncher and method for improved ion bunching in an ion implantation system
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
US7402821B2 (en) * 2006-01-18 2008-07-22 Axcelis Technologies, Inc. Application of digital frequency and phase synthesis for control of electrode voltage phase in a high-energy ion implantation machine, and a means for accurate calibration of electrode voltage phase
KR100755070B1 (ko) * 2006-04-28 2007-09-06 주식회사 하이닉스반도체 번들 빔을 이용한 불균일 이온주입장치 및 방법
KR100755069B1 (ko) * 2006-04-28 2007-09-06 주식회사 하이닉스반도체 불균일한 이온주입에너지를 갖도록 하는 이온주입장치 및방법
RU2462009C1 (ru) * 2011-06-08 2012-09-20 Мурадин Абубекирович Кумахов Способ изменения направления движения пучка ускоренных заряженных частиц, устройство для осуществления этого способа, источник электромагнитного излучения, линейный и циклический ускорители заряженных частиц, коллайдер и средство для получения магнитного поля, создаваемого током ускоренных заряженных частиц
CN108024439B (zh) * 2016-11-01 2020-12-04 北京中科信电子装备有限公司 一种离子rf加速结构及应用该结构的离子注入机
US10763071B2 (en) 2018-06-01 2020-09-01 Varian Semiconductor Equipment Associates, Inc. Compact high energy ion implantation system
US10651011B2 (en) * 2018-08-21 2020-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for generating bunched ion beam
CN109392233B (zh) * 2018-09-20 2020-10-09 中国原子能科学研究院 回旋加速器中心区的固定式束流相位选择结构
US11094504B2 (en) 2020-01-06 2021-08-17 Applied Materials, Inc. Resonator coil having an asymmetrical profile
KR102544486B1 (ko) * 2020-04-07 2023-06-16 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 이온 주입 시스템
US11476087B2 (en) * 2020-08-03 2022-10-18 Applied Materials, Inc. Ion implantation system and linear accelerator having novel accelerator stage configuration
US12096548B2 (en) 2022-09-21 2024-09-17 Applied Materials, Inc. Drift tube electrode arrangement having direct current optics
CN117395851B (zh) * 2023-10-09 2024-12-24 中国科学院近代物理研究所 一种用于肿瘤治疗的紧凑型离子注入器及离子注入方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4284923A (en) * 1978-11-23 1981-08-18 Commissariat A L'energie Atomique Ion beam buncher--debuncher
US4667111A (en) * 1985-05-17 1987-05-19 Eaton Corporation Accelerator for ion implantation
EP1056113A2 (en) * 1999-05-28 2000-11-29 Applied Materials, Inc. Ion implanter and a method of implanting ions

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419584A (en) 1981-07-14 1983-12-06 Eaton Semi-Conductor Implantation Corporation Treating workpiece with beams
US4712042A (en) 1986-02-03 1987-12-08 Accsys Technology, Inc. Variable frequency RFQ linear accelerator
US5189302A (en) 1991-10-28 1993-02-23 The United States Of America As Represented By The United States Department Of Energy Small system for tritium accelerator mass spectrometry
US5339336A (en) 1993-02-17 1994-08-16 Cornell Research Foundation, Inc. High current ion ring accelerator
US5504341A (en) 1995-02-17 1996-04-02 Zimec Consulting, Inc. Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system
US5554857A (en) 1995-10-19 1996-09-10 Eaton Corporation Method and apparatus for ion beam formation in an ion implanter
US5703375A (en) 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
US5998798A (en) 1998-06-11 1999-12-07 Eaton Corporation Ion dosage measurement apparatus for an ion beam implanter and method
TW523796B (en) * 2000-12-28 2003-03-11 Axcelis Tech Inc Method and apparatus for improved ion acceleration in an ion implantation system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4284923A (en) * 1978-11-23 1981-08-18 Commissariat A L'energie Atomique Ion beam buncher--debuncher
US4667111A (en) * 1985-05-17 1987-05-19 Eaton Corporation Accelerator for ion implantation
US4667111C1 (en) * 1985-05-17 2001-04-10 Eaton Corp Cleveland Accelerator for ion implantation
EP1056113A2 (en) * 1999-05-28 2000-11-29 Applied Materials, Inc. Ion implanter and a method of implanting ions

Also Published As

Publication number Publication date
JP4378619B2 (ja) 2009-12-09
US20030038253A1 (en) 2003-02-27
TW584881B (en) 2004-04-21
EP1419515A1 (en) 2004-05-19
US6583429B2 (en) 2003-06-24
JP2005501382A (ja) 2005-01-13
WO2003019613A1 (en) 2003-03-06
CN1545721A (zh) 2004-11-10

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