CN1308500C - Crucible setting method for growing crystal - Google Patents
Crucible setting method for growing crystal Download PDFInfo
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- CN1308500C CN1308500C CNB021043140A CN02104314A CN1308500C CN 1308500 C CN1308500 C CN 1308500C CN B021043140 A CNB021043140 A CN B021043140A CN 02104314 A CN02104314 A CN 02104314A CN 1308500 C CN1308500 C CN 1308500C
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- crucible
- template
- silica tube
- dress
- mouth
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Abstract
The present invention discloses a crucible setting method for the growth of crystals, which relates to a fast setting method of a crucible in the growth of the crystals and has the advantages of centering, flatting surface and sinking resistance; in addition, the present invention also relates to the fixation of thermocouples. The present invention adopts the crucible setting method by reversely setting, which comprises the following steps: manufacturing a template, reversely setting the crucible, setting the thermocouples, filling the thermal insulation material of the powder of zirconium dioxide, turning over the template, cleaning, etc. The method is the setting method of the crucible in the growth of the crystals and has the advantages of centering, flatting surface and sinking resistance, and the fixation of the thermocouples can be kept.
Description
A kind of crucible setting method of method of crystal growth by crystal pulling relates to the crystalline material preparation field.
A kind of crucible setting method of method of crystal growth by crystal pulling, oneself industrialization day by day of Czochralski grown crystal, in these crystal growing process, crucible must be fixed in the big refractory pot, on every side powder filler powder lagging material.They relate to a problem jointly: how to guarantee that crucible centering, face are put down, difficult sinking, the fixing and operation of thermopair is simple and easy, quick.Crucible centering could guarantee that a temperature thermoisopleth is concentric with crystal.The flat assurance of face can be adorned more raw materials, guarantees that the temperature field is stable, guarantees that material can not overflow, and pollutes lagging material.Crucible is difficult for sinking, and reduces the contaminated possibility of raw material, reduces the dress crucible number of times of crucible.Fixing of thermopair, promptly thermopair and crucible span are from certain (can regulate), and the position is few as far as possible in process of growth and a few secondary growth changes, and the assurance relative temperature changes little, and crystal growth several times can be used for reference mutually.
A kind of crucible setting method of method of crystal growth by crystal pulling its objective is that the dress crucible method of a kind of back-off of utilization is finished this step of fixing of crucible setting, thermopair, improves the success ratio of crystal growth.This invention can be applied to great majority and adopt in the Czochralski grown crystals, such as at YVO
4, LN, YAG, GdVO
4In the crystalline process of growth.
Below in conjunction with accompanying drawing technical scheme of the present invention is described, it may further comprise the steps:
1. make dress crucible template, as Fig. 1 a, draw two concentric(al) circless on a poly (methyl methacrylate) plate, interior circular diameter is identical with crucible (1) external diameter, and outside diameter is identical with the external diameter of silica tube (3), shown in Fig. 1 a, b; If regulate crucible crucible mouth and (quartz) pipe at different levels, can be with which floor poly (methyl methacrylate) plate, shown in Fig. 1 c, d; The material of template can use tabular materials such as glass, plastics, metal sheet, plank to replace;
2. filter paper on the crucible inner mast is sealed the crucible mouth with adhesive plaster, and adhesive plaster encases one section about 3mm of crucible outer side wall, can guarantee that so the outer upper side wall of crucible mouth is clean, climbs material on a small quantity if having, and also is difficult for the raw material of making dirty;
With crucible (1) back-off on dress crucible template (2), crucible (1) outward flange and inner circle-line are harmonious, silica tube (3) overlaps with the cylindrical line, guarantees that crucible is in the silica tube center, shown in Fig. 2 A;
4. place thermocouple (4), guarantee that the distance of thermocouple and crucible is certain, fixing with Powdered lagging material Zirconium oxide powder (5), shown in Fig. 2 B;
5. pour Zirconium oxide powder (5) in silica tube (3), the first time is 1/3 silica tube, uses earlier the big stick-means of intimidation compacting, and with (6) tamping of the thin rod of plastics, attention is not disclosed crucible and moved original position again; Add a part of Zirconium oxide powder (5) again, tamping adds Zirconium oxide powder (5) again, and tamping until filling silica tube, flattens, and covers corundum sheet (7), and galvanic couple comes out from corundum sheet (7) rim openings, shown in Fig. 2 B, C;
6. tipping template is removed the crucible template, crucible crucible mouth up, shown in Fig. 2 D, E, the Zirconium oxide powder (5) in the crucible mouth outside is dug equal with thermocouple, compacting adds compacting again behind the thick zirconia particles, add the corundum ring plate, compress that the corundum ring upper edge is than the low 1-2mm of the quartzy mouth of pipe.At this moment to note: the corundum sheet should be tightly near the crucible mouth, and the gap between the sheet is little, ZrO when bleeding like this
2Powder just is not easy to fly in the crucible contaminated feedstock;
7. remove the powder in adhesive plaster above the crucible, crucible outer, corundum sheet and the silica tube outside with soft brush and gauze;
8. slowly open adhesive plaster along a direction, take out filter paper, this crucible and attemperator promptly can carry out crystal growth;
The dress crucible method of above back-off, to the crucible of crystal growth be a kind of centering, face flat, be difficult for the quick allocation method that sink, and can keep the fixing of thermopair.In addition, for further fixedly crucible, blocky lagging material (8) can be increased, shown in Fig. 2 F under crucible.
A kind of crucible setting method of method of crystal growth by crystal pulling, its accompanying drawing 1 are dress crucible template synoptic diagram, wherein: (a) dress crucible template vertical view; (b) dress crucible template side-view; (c) dress crucible template; (d) dress crucible template.Accompanying drawing 2 is crucible setting block diagram, wherein (1) crucible; (2) dress crucible template; (3) silica tube; (4) thermopair; (5) Zirconium oxide powder; (6) thin sticking plaster; (7) corundum sheet; (8) blocky lagging material.
Claims (2)
1. the crucible setting method of a method of crystal growth by crystal pulling is the dress crucible method that adopts back-off, and it is characterized in that: this dress crucible method comprises the following steps:
1) make dress crucible template, draw two concentric(al) circless on a poly (methyl methacrylate) plate, interior circular diameter is identical with crucible (1) external diameter, and outside diameter is identical with the external diameter of silica tube (3), which floor poly (methyl methacrylate) plate to regulate the level attitude of crucible crucible mouth and silica tube with;
2) filter paper on the crucible inner mast is sealed the crucible mouth with adhesive plaster, and adhesive plaster encases one section about 3mm of crucible outer side wall;
3) with crucible (1) back-off on dress crucible template (2), crucible (1) outward flange and inner circle-line are harmonious, silica tube (3) overlaps with the cylindrical line;
4) place thermocouple (4), guarantee that the distance of thermocouple and crucible is certain, fixing with Powdered lagging material Zirconium oxide powder (5);
5) pour Zirconium oxide powder (5) in silica tube (3), the first time is 1/3 silica tube, uses earlier the big stick-means of intimidation compacting, and with (6) tamping of the thin rod of plastics, attention is not disclosed crucible and moved original position again; Add a part of Zirconium oxide powder (5) again, tamping repeats this step, until filling silica tube, flattens, and covers corundum sheet (7), and galvanic couple comes out from corundum sheet (7) rim openings;
6) the tipping template is removed the crucible template, and crucible crucible mouth digs the Zirconium oxide powder (5) in the crucible mouth outside equal with thermocouple up, and compacting adds compacting again behind the thick zirconia particles, adds the corundum ring plate, compresses, and the corundum ring upper edge is than the low 1-2mm of the quartzy mouth of pipe;
7) remove the powder outside adhesive plaster, crucible outer, corundum sheet and the silica tube above the crucible with soft brush and gauze;
8) slowly open adhesive plaster along a direction, take out filter paper.
2. the crucible setting method of a kind of method of crystal growth by crystal pulling as claimed in claim 1 is characterized in that: these tabular materials replacements of said dress crucible template useable glass or plastics or metal sheet or plank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021043140A CN1308500C (en) | 2002-02-25 | 2002-02-25 | Crucible setting method for growing crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021043140A CN1308500C (en) | 2002-02-25 | 2002-02-25 | Crucible setting method for growing crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1441090A CN1441090A (en) | 2003-09-10 |
| CN1308500C true CN1308500C (en) | 2007-04-04 |
Family
ID=27768408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021043140A Expired - Fee Related CN1308500C (en) | 2002-02-25 | 2002-02-25 | Crucible setting method for growing crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1308500C (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08183696A (en) * | 1994-12-27 | 1996-07-16 | Shin Etsu Chem Co Ltd | Crucible for producing fine wire-shaped silicon and fine wire-shaped silicon |
| CN1174956A (en) * | 1996-05-20 | 1998-03-04 | 三菱麻铁里亚尔硅材料株式会社 | Crucible fxing method and support base and base assembly equipment |
| EP0856599A2 (en) * | 1997-01-31 | 1998-08-05 | Komatsu Electronic Metals Co., Ltd | Apparatus for feeding raw material into a quartz crucible and method of feeding the same |
| JPH11263696A (en) * | 1998-03-12 | 1999-09-28 | Super Silicon Kenkyusho:Kk | Quartz crucible loading pallet for quartz crucible handling device |
| US6007621A (en) * | 1997-01-31 | 1999-12-28 | Komatsu Elctronic Metals Co., Ltd. | Apparatus for feeding raw material into a quartz crucible and method of feeding the same |
-
2002
- 2002-02-25 CN CNB021043140A patent/CN1308500C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08183696A (en) * | 1994-12-27 | 1996-07-16 | Shin Etsu Chem Co Ltd | Crucible for producing fine wire-shaped silicon and fine wire-shaped silicon |
| CN1174956A (en) * | 1996-05-20 | 1998-03-04 | 三菱麻铁里亚尔硅材料株式会社 | Crucible fxing method and support base and base assembly equipment |
| EP0856599A2 (en) * | 1997-01-31 | 1998-08-05 | Komatsu Electronic Metals Co., Ltd | Apparatus for feeding raw material into a quartz crucible and method of feeding the same |
| US6007621A (en) * | 1997-01-31 | 1999-12-28 | Komatsu Elctronic Metals Co., Ltd. | Apparatus for feeding raw material into a quartz crucible and method of feeding the same |
| JPH11263696A (en) * | 1998-03-12 | 1999-09-28 | Super Silicon Kenkyusho:Kk | Quartz crucible loading pallet for quartz crucible handling device |
Non-Patent Citations (3)
| Title |
|---|
| Single crystal growth of dense rare-earth based oxides for fastscintillators. Petrosyan,A. G.,Pedrini,C,Curr. Top. Cryst. Growth Res.,Vol.4 No.1 1998 * |
| Single crystal growth of dense rare-earth based oxides for fastscintillators. Petrosyan,A. G.,Pedrini,C,Curr. Top. Cryst. Growth Res.,Vol.4 No.1 1998;铱金坩埚中钇铝石榴石固化熔体移出技术 曹余惠，人工晶体学报，第26卷第2期 1997 * |
| 铱金坩埚中钇铝石榴石固化熔体移出技术 曹余惠，人工晶体学报，第26卷第2期 1997 * |
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| Publication number | Publication date |
|---|---|
| CN1441090A (en) | 2003-09-10 |
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Owner name: QINGDAO HAITAI PHOTOELECTRIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: FUJIAN INST. OF MATTER STRUCTURE, CHINESE ACADEMY OF SCIENCES Effective date: 20081017 |
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