CN1307478C

CN1307478C - Liquid crystal display unit structure capable of reducing reflection and its forming method

Info

Publication number: CN1307478C
Application number: CNB031009476A
Authority: CN
Inventors: 张世昌; 蔡耀铭
Original assignee: Toppoly Optoelectronics Corp
Current assignee: TPO Displays Corp
Priority date: 2003-01-07
Filing date: 2003-01-07
Publication date: 2007-03-28
Anticipated expiration: 2023-01-07
Also published as: CN1515946A

Abstract

The present invention provides a liquid crystal display unit structure and a formation method thereof. The structure comprises a semiconductor layer, a first metallic layer and a second metallic layer. The formation method comprises the steps: forming the semiconductor layer, forming an insulation layer on the semiconductor layer, forming the first metallic layer on the insulation layer, forming a dielectric layer on the first metallic layer and forming the second metallic layer on the dielectric layer. Both the first metallic layer and the second metallic layer are positioned above the semiconductor layer; the first metallic layer and/or the second metallic layer extends to cover one part or all of the semiconductor layer.

Description

Reduce liquid crystal display unit structure of reflection and forming method thereof

Technical field

The invention relates to a kind of liquid crystal display (liquid crystal display) unit structure and forming method thereof.

Background technology

Fig. 1 is a prior art liquid crystal display vertical view.Wherein include polysilicon (poly-silicon) layer 104, the first metal layer 108 and second metal level 112.Can see exposed partly polysilicon layer 104 in order to increase aperture opening ratio (aperture ratio).Yet the reflectivity of polysilicon layer 104 is very high, causes display usefulness to reduce, and for example contrast (contrast) descends.Polysilicon layer 104 exposes area and varies in size in addition, or the crystallization processing procedure causes the phenomenon that irregular colour (mura) arranged when polysilicon layer 104 reflectivity are inconsistent then can to make the display shutdown.

The general practice that solves the polysilicon layer reflectivity is to utilize black matrix" (black matrix) that polysilicon layer is covered.This black matrix" can be made in colored filter (color filter) side or membrane transistor (thin film transistor) side.If be made in the colored filter side, black matrix" must be reserved the tolerance area of shade misalignment (misalignment), so area is bigger.If be made in the membrane transistor side, then must how to make the processing procedure of black matrix" together.

Therefore need a kind of liquid crystal display unit structure and forming method thereof, can solve polysilicon layer reflectivity problem, and must the larger area black matrix", processing procedure is also easier.

Summary of the invention

The present invention promptly provides a kind of liquid crystal display unit structure and forming method thereof.This structure and method can solve polysilicon layer reflectivity problem, and must be than the large tracts of land black matrix", and processing procedure is also easier.

Main aspect of the present invention is to provide a kind of liquid crystal display unit structure and forming method thereof, can solve polysilicon layer reflectivity problem.

Another aspect of the present invention is to provide a kind of liquid crystal display unit structure that solves polysilicon layer reflectivity problem and forming method thereof, must be than the large tracts of land black matrix", and processing procedure is also easier.

The invention provides a kind of formation method of liquid crystal display unit structure.Mainly utilize the metal level extension and cover former exposed polysilicon layer.The formation method of this structure comprise form semi-conductor layer, form an insulation course (insulator) on the semiconductor layer, form a first metal layer on the insulation course, form a dielectric layer (dielectric) on the first metal layer, and form one second metal level on dielectric layer.Wherein the first metal layer and second metal level all are positioned at the semiconductor layer top.And first and/or second metal level extends and covers a part of of semiconductor layer or all.The part of semiconductor layer described herein is meant the part more than 70 percent of semiconductor layer area.The first metal layer comprises a common line (common line) or a gate line (gate line), and second metal level comprises a data line (data line).

The present invention also provides as the formed liquid crystal display unit structure of top method.This structure comprises semi-conductor layer, a first metal layer, and one second metal level.Wherein the first metal layer and second metal level all are positioned at the semiconductor layer top.And first and/or second metal level extends and covers a part of of semiconductor layer or all.The part of semiconductor layer described herein is meant the part more than 70 percent of semiconductor layer area.The first metal layer comprises a common line or a gate line, and second metal level comprises a data line.

Description of drawings

Be to explain the present invention, enclose graphic and do following narration.Wherein similarly numbering is represented similar elements:

Fig. 1 is a prior art liquid crystal display vertical view;

Fig. 2 is a preferred embodiment formation method diagrammatic cross-section of the present invention;

Fig. 3 is the first embodiment of the invention diagrammatic cross-section;

Fig. 4 is the second embodiment of the invention diagrammatic cross-section;

Fig. 5 is the third embodiment of the invention diagrammatic cross-section;

Fig. 6 is the fourth embodiment of the invention diagrammatic cross-section;

Fig. 7 is the fifth embodiment of the invention diagrammatic cross-section;

Fig. 8 is the sixth embodiment of the invention diagrammatic cross-section;

Fig. 9 is a preferred embodiment vertical view of the present invention.

Embodiment

The invention provides a kind of liquid crystal display unit structure and forming method thereof.Mainly utilize the metal level extension and cover former exposed polysilicon layer.Formation method diagrammatic cross-section such as Fig. 2 of preferred embodiment of the present invention.At first form a polysilicon layer 104 on substrate 102 (step 20).Form an insulation course 106 again on polysilicon layer 104 (step 22).Form a first metal layer 208 again on insulation course 106 (step 24).Then form a dielectric layer 110 on the first metal layer 208 (step 26).Form one second metal level 212 at last on dielectric layer 110 (step 28).Wherein the first metal layer 208 and second metal level 212 all are positioned at polysilicon layer 104 tops.The first metal layer 208 and second metal level 212 all extend and cover the whole of polysilicon layer 104 in this preferred embodiment.The first metal layer 208 can comprise a common line 214 or a gate line (not showing among Fig. 2), and this embodiment is a common line 214.And second metal level 212 comprises a data line 218.

Fig. 3 is the first embodiment of the invention diagrammatic cross-section.Wherein the first metal layer 208 comprises a common line 214, and extends and cover the whole of polysilicon layer 104.Second metal level 312 comprises a data line 318, then only covers the some of polysilicon layer 104.The part of polysilicon layer 104 described herein is meant the part more than 70 percent of polysilicon layer 104 areas.

Fig. 4 is the second embodiment of the invention diagrammatic cross-section.Wherein the first metal layer 408 comprises a gate line 416, and extends and cover the whole of polysilicon layer 104.312 somes that only cover polysilicon layer 104 of second metal level.The part of polysilicon layer 104 described herein is meant the part more than 70 percent of polysilicon layer 104 areas.

Fig. 5 is the third embodiment of the invention diagrammatic cross-section.Wherein the first metal layer 508 comprises a common line 514, and only covers the some of polysilicon layer 104.Second metal level 212 comprises a data line 218, then extends and covers the whole of polysilicon layer 104.The part of polysilicon layer 104 described herein is meant the part more than 70 percent of polysilicon layer 104 areas.

Fig. 6 is the fourth embodiment of the invention diagrammatic cross-section.Wherein the first metal layer 608 comprises a gate line 616, and only covers the some of polysilicon layer 104.212 of second metal levels extend and cover the whole of polysilicon layer 104.The part of polysilicon layer 104 described herein is meant the part more than 70 percent of polysilicon layer 104 areas.

Fig. 7 is the fifth embodiment of the invention diagrammatic cross-section.The 5th embodiment is one of preferred embodiment.Wherein the first metal layer 208 comprises 212 of a common line 214, the second metal levels and comprises a data line 218.The first metal layer 208 and second metal level 212 all extend and cover the whole of polysilicon layer 104.

Fig. 8 is the sixth embodiment of the invention diagrammatic cross-section.The 6th embodiment is one of preferred embodiment.Wherein the first metal layer 808 comprises a gate line 816.The first metal layer 808 and second metal level 212 all extend and cover the whole of polysilicon layer 104.

Fig. 9 is one embodiment of the invention vertical view.Compared to Figure 1 cover exposed originally polysilicon layer 104 (not showing among Fig. 9) than finding the first metal layer 208,808 and second metal level 212 all to extend with this embodiment.So can not increase black matrix" area or processing procedure and solve the problem of polysilicon layer 104 reflectivity.

The above is preferred embodiment of the present invention and design, these embodiment and design only illustrate, be not to be used to limit the scope of the invention, all with the technological means that is equal to or any distortion in the scope that claim was contained, all do not break away from interest field of the present invention and category thereof.

Graphic component symbol explanation:

102 substrates

104 polysilicon layers

106 insulating barriers

108,208,408,508,608,808 the first metal layers

110 dielectric layers

112,212,312 second metal levels

114,214,514 common lines

116,416,616,816 gate lines

118,218,318 data lines

Claims

1. method that forms liquid crystal display unit structure on substrate is characterized in that described method comprises:

Form semiconductor layer on described substrate;

Form insulation course on described semiconductor layer;

Form the first metal layer on described insulation course, described the first metal layer is positioned at described semiconductor layer top, and covers described semiconductor layer part or all;

Form dielectric layer on described the first metal layer; And

Form second metal level on described dielectric layer, described second metal level is positioned at described semiconductor layer top, and covers described semiconductor layer part or all;

At least one metal level in wherein said the first metal layer and described second metal level all covers described semiconductor layer.

2. the method for claim 1, it is further characterized in that, wherein said the first metal layer comprises common line or gate line, described second metal level comprises data line, described semiconductor layer comprises polysilicon layer, and the part of described semiconductor layer is meant 70 percent the part that is no less than described semiconductor layer area.

3. a liquid crystal display unit structure is characterized in that, comprises:

Semiconductor layer;

The first metal layer is positioned at described semiconductor layer top, and covers described semiconductor layer part or all; And

Second metal level is positioned at described the first metal layer top, and covers described semiconductor layer part or all;

At least one metal level in wherein said the first metal layer and described second metal level all covers described semiconductor layer;

Wherein said the first metal layer comprises common line.

4. a liquid crystal display unit structure is characterized in that, comprises:

Semiconductor layer;

The first metal layer is positioned at described semiconductor layer top, and covers described semiconductor layer part or all; And second metal level, be positioned at described the first metal layer top, and cover described semiconductor layer part or all;

Wherein said the first metal layer comprises gate line.

5. as claim 3 or 4 described liquid crystal display unit structure, it is further characterized in that, wherein said second metal level comprises data line, and described semiconductor layer comprises polysilicon layer, and the part of described semiconductor layer is meant 70 percent the part that is no less than described semiconductor layer area.

6. a liquid crystal display unit structure is characterized in that, comprises:

Semiconductor layer;

Second metal level between described semiconductor layer and described the first metal layer, and covers part or all of described semiconductor layer;

Wherein said the first metal layer comprises data line.