CN1307356A - 制作发光二极管外延晶片的方法 - Google Patents
制作发光二极管外延晶片的方法 Download PDFInfo
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- CN1307356A CN1307356A CN00117643A CN00117643A CN1307356A CN 1307356 A CN1307356 A CN 1307356A CN 00117643 A CN00117643 A CN 00117643A CN 00117643 A CN00117643 A CN 00117643A CN 1307356 A CN1307356 A CN 1307356A
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/497,316 | 2000-02-03 | ||
US09/497,316 US6429102B1 (en) | 2000-01-27 | 2000-02-03 | Method of manufacturing low resistivity p-type compound semiconductor material |
Publications (2)
Publication Number | Publication Date |
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CN1307356A true CN1307356A (zh) | 2001-08-08 |
CN1170304C CN1170304C (zh) | 2004-10-06 |
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Application Number | Title | Priority Date | Filing Date |
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CNB001176439A Expired - Lifetime CN1170304C (zh) | 2000-02-03 | 2000-05-25 | 制作发光二极管外延晶片的方法 |
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CN (1) | CN1170304C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1332454C (zh) * | 2004-10-20 | 2007-08-15 | 晶元光电股份有限公司 | 制作一半导体发光元件的方法 |
CN105810782A (zh) * | 2015-01-15 | 2016-07-27 | 丰田合成株式会社 | 用于制造半导体器件的方法 |
CN112802738A (zh) * | 2021-04-06 | 2021-05-14 | 中山德华芯片技术有限公司 | 一种提升磷化铟中锌掺杂浓度的方法 |
-
2000
- 2000-05-25 CN CNB001176439A patent/CN1170304C/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1332454C (zh) * | 2004-10-20 | 2007-08-15 | 晶元光电股份有限公司 | 制作一半导体发光元件的方法 |
CN105810782A (zh) * | 2015-01-15 | 2016-07-27 | 丰田合成株式会社 | 用于制造半导体器件的方法 |
CN105810782B (zh) * | 2015-01-15 | 2019-01-18 | 丰田合成株式会社 | 用于制造半导体器件的方法 |
CN112802738A (zh) * | 2021-04-06 | 2021-05-14 | 中山德华芯片技术有限公司 | 一种提升磷化铟中锌掺杂浓度的方法 |
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Publication number | Publication date |
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CN1170304C (zh) | 2004-10-06 |
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Legal Events
Date | Code | Title | Description |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JINGYUAN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: GUOLIAN PHOTOELECTRIC SCIENCE AND TECHNOLOGY CO LTD Effective date: 20060303 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20060303 Address after: Hsinchu City, Taiwan, China Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: Hsinchu Science Industrial Park, Taiwan Patentee before: Guolian Photoelectric Science and Technology Co., Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20041006 |