CN1303478C - Method for realizing micro nano pattern transfer based on rotary coating and bonding - Google Patents
Method for realizing micro nano pattern transfer based on rotary coating and bonding Download PDFInfo
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- CN1303478C CN1303478C CNB2004100534876A CN200410053487A CN1303478C CN 1303478 C CN1303478 C CN 1303478C CN B2004100534876 A CNB2004100534876 A CN B2004100534876A CN 200410053487 A CN200410053487 A CN 200410053487A CN 1303478 C CN1303478 C CN 1303478C
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Abstract
The present invention relates to a method for transferring micro-nano patterns based on rotary coating and bonding, which is used for the nano-technical field. The present invention comprises the following procedures: step 1, a mother board is processed, and the surface of the mother board is processed; step 2, a polymer prepolymer is rotatablely coated on the surface of the mother board and is solidified by using a rotary coating method; step 3, the solidified polymer is bonded with a substrate, and the mother board is stripped off; step 4, the residual polymer on a concave part is removed by reactive ion etching, and thus, a polymer pattern is formed on the substrate or the polymer pattern is transferred to the substrate. The rotary coating and bonding technology of the present invention has the advantages that solidifying procedures and time can be reduced, technical procedures are accelerated, and the present invention is in compatibility with microelectronic technology. The method can be used for rapidly produce micro-nano structure patterns and devices with cheap price in a large scale.
Description
Technical field
The present invention relates to a kind of on motherboard the spin on polymers and the method for bonding substrate thereon, specifically be a kind of method that realizes micro-nano design transfer based on spin coating and bonding.Be used for field of nanometer technology.
Background technology
Usually adopt the method for optical lithography to form pattern in the prior art, along with the Cost Growth of optical exposure instrument, and the reducing of wavelength, many important techniques difficult problems have appearred, as the selection of resolution and material; In addition, optical lithography also has and is not suitable for processing non-smooth surface and is difficult to form shortcoming such as three-dimensional structure.In photoetching technique of future generation, beamwriter lithography production efficiency is too low; The instrument that the X linear light is carved is quite expensive.The micrometastasis molding is the new method at the processing micron and nano of the deficiency proposition of optical lithography, at first adopt method to form dimethyl silicone polymer (PDMS) seal in the casting of motherboard surface, on the PDMS seal, apply liquid prepolymer then, the seal that will contain prepolymer then contacts with substrate surface, after adopting ultraviolet or heat curing, peel off the PDMS seal has promptly formed polymkeric substance on substrate pattern.
Find through literature search prior art, people such as Xiao-Mei Zhao are at " Applied PhysicsLetter ", vol71, write articles on No.8 (1997) the pp1017-1019 page or leaf: " Demonstration ofwaveguide couplers fabricated using microtransfer molding " (" adopting the research of micrometastasis molding methods processing waveguide coupler ", " applied physics wall bulletin ").What wherein the processing of polymkeric substance optical waveguide was adopted promptly is the micrometastasis molding technology.At first use the normalized optical photoetching process on motherboard, to form the photoresist pattern,, peel off motherboard after the curing and obtain the PDMS seal then at photoresist top casting PDMS; Fill the liquid performed polymer of polyurethane then in the matrix microstructure on PDMS, and be inverted to be placed on and use ultraviolet light polymerization on the silicon base; Peel off the PDMS seal at last, in substrate, make the pattern of polyurethane.The shortcoming of this technology is that solidification process is comparatively loaded down with trivial details, because except the PDMS performed polymer need solidify, also will solidify the liquid performed polymer of polyurethane; In addition, the PDMS performed polymer adopts the method for casting, and it solidifies required time more than adopting the required time of spin coating method.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art and defective, a kind of method that realizes micro-nano design transfer based on spin coating and bonding is provided.Make it based on spin on polymers on motherboard and bonding substrate thereon, realize design transfer, reach the purpose of accelerating solidification process and reducing set time by spin coating and bonding, thereby more help micro-nano patterning of large-scale production and device.
The present invention is achieved by the following technical solutions, the present invention is processing mother board and the motherboard surface is handled at first, the method that adopts spin coating then is in motherboard surface spin on polymers performed polymer and curing, then bonding substrate and peel off motherboard on cured polymer, adopt reactive ion etching to remove the residual polymkeric substance of recess has just formed polymkeric substance in substrate pattern at last, perhaps polymer pattern is transferred in the substrate.
Below the present invention is further illustrated, specific as follows:
(1) processing mother board reaches the motherboard surface is handled
Adopt optical lithography, micromachined, beamwriter lithography, dry method or wet etching, focused-ion-beam lithography processing mother board.Motherboard can be materials such as silicon/silicon dioxide.Should carry out the silanization PROCESS FOR TREATMENT to silicon/silicon dioxide motherboard surface, the purpose of doing like this is to make being convenient in demoulding subsequently.Can adopt alkyl silane to handle, as (1,1,2,2H crosses the fluorine decyl)-trichlorosilane etc.
(2) in motherboard surface spin on polymers performed polymer and curing
At first, then put into the vacuum tank degassing, then mixed polymkeric substance is spun on the motherboard by the whirl coating platform, put into baking oven at last and be heating and curing the mixed stirring of the hardening agent of polymkeric substance performed polymer and this polymkeric substance correspondence.
(3) bonding substrate and peel off motherboard on cured polymer
At first adopt dried oxygen or wet oxygen method with silicon chip, adopt bonding apparatus that polymkeric substance and substrate are bonded together then, at last that bonding is good polymkeric substance and substrate are peeled off motherboard together.
(4) form pattern in substrate
Adopt reactive ion etching equipment to remove the residual polymkeric substance of recess, thereby in substrate, formed the pattern of polymkeric substance.Can further be mask with the polymkeric substance, by adopt etching or stripping technology with design transfer on silicon base.If adopt stripping technology, before bonding, need sputter skim metal on substrate.
By spin coating among the present invention and bonding technology, can reduce curing schedule and set time, accelerate technological process, and compatible mutually with microelectronic technique, can realize cheapness and large-scale production micro nano structure pattern and device apace with this method.
Embodiment
Below be example with dimethyl silicone polymer (PDMS:poly (dimethylsiloxane)), by the specific embodiment that shifts micro-nano pattern is further described technical scheme of the present invention.
(1) processing mother board reaches the motherboard surface is handled
Adopt motherboard of method processing of inductively coupled plasma etching.What motherboard adopted is silicon materials.Pattern on the motherboard is the unit of repetition, and each unit has various pattern again, as letter, and broken line and hexagon etc., its live width does not wait to 20 μ m from 2 μ m.With (1,1,2,2H crosses the fluorine decyl)-trichlorosilane the silanization PROCESS FOR TREATMENT is carried out on silicon motherboard surface.
(2) in motherboard surface spin coating PDMS performed polymer and curing
At first PDMS performed polymer (the inferior RTV 3838A in sieve ground) and corresponding hardening agent (the inferior RTV3838B in sieve ground) are pressed 10: 1 mixed stirrings, then put into the vacuum tank degassing 30 minutes, then the PDMS performed polymer is spun on the silicon motherboard by the whirl coating platform, its rotating speed is about 2000rpm.Put into baking oven at last, 65 ℃ of baking-curings 1 hour.
(3) bonded silica disk and peel off motherboard on the PDMS that solidifies
At first clean silicon wafer and oven dry, adopt dried oxygen method to silicon chip, adopt bonding apparatus that the silicon wafer of PDMS and oxidation is bonded together then, bonding temperature is 200 ℃, and chuck pressure is 300mbar.At last that bonding is good PDMS and silicon wafer are peeled off motherboard together.
(4) form pattern in substrate
Adopt reactive ion etching equipment to remove the residual PDMS of recess, etching is gases used to be oxygen, and the time is 40s, thereby has formed the pattern of PDMS in substrate.
Through spin coating and bonding technology, and formed the pattern of PDMS in the substrate, then by oxygen reaction ion etching with design transfer to substrate, fully duplicated pattern on the original motherboard at the pattern that forms in the substrate, realized that micro nano structure transfers to suprabasil purpose from motherboard fully.
Claims (9)
1, a kind of method that realizes micro-nano design transfer based on spin coating and bonding, it is characterized in that, at first processing mother board reaches the motherboard surface is handled, the method that adopts spin coating then is in motherboard surface spin on polymers performed polymer and curing, then bonding substrate and peel off motherboard on cured polymer, adopt reactive ion etching to remove the residual polymkeric substance of recess has just formed polymkeric substance in substrate pattern at last, perhaps polymer pattern is transferred in the substrate.
2, according to claim 1ly realize it is characterized in that the method for micro-nano design transfer based on spin coating and bonding, described processing mother board and the motherboard surface is handled, specific as follows:
Adopt optical lithography, micromachined, beamwriter lithography, dry method or wet etching or focused-ion-beam lithography processing mother board, motherboard is silicon or earth silicon material, should carry out the silanization PROCESS FOR TREATMENT to silicon or silicon dioxide motherboard surface, make being convenient in demoulding subsequently, adopt alkyl silane to handle.
3, according to claim 2ly realize the method for micro-nano design transfer it is characterized in that described alkyl silane method comprises uses 1,1,2 that 2H crosses fluorine octyl group-trichlorosilane, 1,1,2 based on spin coating and bonding, 2H crosses fluorine decyl-trichlorosilane.
4, according to claim 1ly realize it is characterized in that the method for micro-nano design transfer based on spin coating and bonding, described at motherboard surface spin on polymers performed polymer and solidify, specific as follows:
At first, then put into the vacuum tank degassing, then polymeric blends is spun on the motherboard by the whirl coating platform, be cured again the mixed stirring of the hardening agent of polymkeric substance performed polymer and this polymkeric substance correspondence.
5, describedly realize the method for micro-nano design transfer it is characterized in that described polymkeric substance comprises dimethyl silicone polymer PDMS according to claim 1 or 4 based on spin coating and bonding.
6, describedly realize the method for micro-nano design transfer it is characterized in that described curing is included in heating and ultraviolet irradiation in the baking oven according to claim 1 or 4 based on spin coating and bonding.
7, according to claim 1ly realize it is characterized in that the method for micro-nano design transfer based on spin coating and bonding, described on cured polymer bonding substrate and peel off motherboard, specific as follows:
At first adopt dried oxygen or wet oxygen method with silicon chip, adopt bonding apparatus that polymkeric substance and substrate are bonded together then, at last that bonding is good polymkeric substance and substrate are peeled off motherboard together.
8, according to claim 1ly realize it is characterized in that the method for micro-nano design transfer, describedly form pattern in substrate based on spin coating and bonding, specific as follows:
Adopting reactive ion etching equipment to remove the residual polymkeric substance of recess, thereby formed the pattern of polymkeric substance in substrate, is mask with the polymkeric substance further perhaps, with design transfer to silicon substrate.
9, the method that realizes micro-nano design transfer based on spin coating and bonding according to claim 8, it is characterized in that, with design transfer to silicon substrate, comprise by adopt etching or stripping technology with design transfer on silicon base, if adopt stripping technology, before bonding, need sputter skim metal on substrate.
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| CN1303478C true CN1303478C (en) | 2007-03-07 |
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| CN101402446B (en) * | 2008-11-06 | 2011-06-01 | 西安交通大学 | Method for manufacturing drag reduction surface |
| CN103390569A (en) * | 2013-07-22 | 2013-11-13 | 华进半导体封装先导技术研发中心有限公司 | Method for measuring shape of TSV (through silicon via) with high aspect ratio |
| CN105097672A (en) * | 2015-08-19 | 2015-11-25 | 华南师范大学 | Preparation method for electrowetting display substrate |
| CN111335222A (en) * | 2020-02-17 | 2020-06-26 | 河海大学常州校区 | Highway crash barrier coating with fog absorbing function |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1437070A (en) * | 2002-02-08 | 2003-08-20 | 旺宏电子股份有限公司 | Semiconductor element pattern transferring method |
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| CN1437070A (en) * | 2002-02-08 | 2003-08-20 | 旺宏电子股份有限公司 | Semiconductor element pattern transferring method |
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