CN1297953C - Method for preparing dual-vertical spin valve and its structure - Google Patents
Method for preparing dual-vertical spin valve and its structure Download PDFInfo
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- CN1297953C CN1297953C CNB2004101018475A CN200410101847A CN1297953C CN 1297953 C CN1297953 C CN 1297953C CN B2004101018475 A CNB2004101018475 A CN B2004101018475A CN 200410101847 A CN200410101847 A CN 200410101847A CN 1297953 C CN1297953 C CN 1297953C
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Abstract
The present invention relates to a method for preparing dual-vertical self-spinning valves and the structure thereof. A metal multilayer film structure is prepared from a glass or monocrystal silicon base plate by means of plasma sputtering, magnetic control sputtering or molecular beam epitaxial growth; then, two electrodes are respectively prepared on the top layer and the bottom layer of the metal multilayer film by means of photolithography, electron beam printing or ion etching. When the self-spinning valve works, the flow direction of signal current is vertical to the film surface of the metal multilayer film. The present invention has the advantages that the magnetic resistance effect of the self-spinning valve is greatly increased by perfectly combining the characteristics that the current is vertical to the plane surface of the thin film and a magnetic anisotropy easy axis is vertical to the surface of the thin film, the magnetic uniformity of the self-spinning valve is effectively improved, and a single magnetic domain structure can be still maintained when the material of the self-spinning valve is processed into a nanometer grade.
Description
Technical field
The invention belongs to the magnetic storage technical field, a kind of method and structure thereof for preparing dual-vertical spin valve particularly is provided.This Spin Valve is used as the hard disc of computer playback head, or is used in the equipment such as magnetic random memory, sensor.
Technical background
Current era is the information age, and the information interchange of every profession and trade has proposed more and more higher requirement to the storage density and the stability of information.In more than ten years in the past, information storage technology especially Magnetographic Technology has obtained development at full speed, has particularly used the magnetic head of giant magnetoresistance spin valve thin film material, makes the area recording density of hard disk significantly improve.Laboratory longitudinal magnetic recording density has reached 150Gb/in at present
2, and towards next target 1Tb/in
2March.Playback head mainly is to adopt electric current to be parallel to giant magnetoresistance (GMR) the spin valve thin film device (being CIP-SPV) of plane configuration at present.Because theoretical research shows that if continue to use the CIP-SPV magnetic head, the storage density of hard disc of computer can only reach 200-250Gb/in at most
2Will tend to saturated.So current vertical becomes the playback head material of future generation of tool potentiality in plane giant magnetoresistance Spin Valve (CPP-SPV).With respect to CIP-SPV, the key advantages of CPP-SPV is: along with the raising of storage density, the size of memory element reduces significantly, the GMR output signal of CIP-SPV also will reduce thereupon, CPP-SPV is then just in time opposite, the GMR output signal increases on the contrary, reads sensitivity and is further enhanced.However, the easy axis direction of the CPP-SPV membraneous material magnetic anisotropy of structure all is to be parallel to face usually, when they are processed into small-sized component, always wishes that film has single domain structure; Yet, when further element being accomplished sub-micron even smaller szie, to bring a series of problems: magnetization occurs at the edge of film and crispatura (magnetization curling), thereby cause film eddy current magnetization (Vortex magnetization), the eddy current domain structure occurs.If when being used for making device, will causing losing of canned data, thereby limit further developing of high information storage technology.
Summary of the invention
The object of the invention is to provide a kind of method and structure thereof for preparing dual-vertical spin valve, and promptly current vertical is in the easy spin valve thin film material and preparation method thereof of the vertical face of axle of plane configuration and magnetic anisotropy.
Dual-vertical spin valve system among the present invention adopts glass or monocrystalline silicon substrate, a kind of metal multi-layered film structure that is prepared from by plasma sputtering, magnetron sputtering or molecular beam epitaxial growth means, produce two electrodes at the top layer and the bottom face of metallized multilayer film respectively by the means of lithoprinting or electron beam printing, ion etching then, make this Spin Valve when work, the flow direction of marking current is perpendicular to the metallized multilayer film face.
Dual-vertical spin valve among the present invention is a kind of metal multi-layered film structure, and concrete structure is as follows:
The bottom of dual-vertical spin valve is the metal platinum of 1～20 nanometer thickness, is called bottom electrode layer.
Up the second layer is a cobalt/platinum composite structure the end of from, it is to replace overlapping forming by 2～20 layers metallic cobalt and metal platinum (bottom is a metallic cobalt, top layer is a metal platinum), wherein the thickness of layer of metal cobalt is 0.1～0.4 nanometer, the thickness of metal platinum layer is 1～3 nanometer.Be called end composite bed.
The end of from up the 3rd layer be metallic cobalt, thickness is 0.1～1 nanometer.The 3rd layer merges with the second layer and to be called free layer.Because their magnetic moment can rotate freely under externally-applied magnetic field.
The end of from up the 4th layer be metallic copper, thickness is 1～10 nanometer, is called separation layer.This separation layer also can replace with the metal platinum or the alundum (Al of 1～4 nanometer thickness.
Up layer 5 is a metallic cobalt end of from, and thickness is 0.1～2 nanometer.
Up layer 6 is another platinum/cobalt composite structure the end of from, is called as the top composite bed.It is to replace overlapping forming (bottom is a metal platinum, and top layer is a metallic cobalt) by 2～20 layers metal platinum and metallic cobalt, and wherein the thickness of metal platinum is 1～3 nanometer, and the thickness of metallic cobalt is 0.1～0.4 nanometer.The magnetic moment of this composite structure (being layer 6) and layer 5 is all by the inverse ferric magnetosphere pinning, thereby is called as pinning layer.
Up layer 7 is anti-ferromagnetic ferromanganese or other manganese alloy layers the end of from, and thickness is 5～40 nanometers.
The end of from up the 8th layer be the metal platinum of 1～10 nanometer, be top electrode layer.
The invention has the advantages that: easily two feature perfect adaptations of axle vertical thin face are together with current vertical thin film planar and magnetic anisotropy dexterously.In the thin film planar configuration, significantly improve the magnetoresistance effect of Spin Valve by current vertical; Because the pinning layer and the free layer of Spin Valve all adopt as thin as a wafer metal platinum and metallic cobalt to replace overlapping composite structure, make the easy axle of pinning layer and free layer magnetic anisotropy all perpendicular to face, effectively improved the magnetic homogeneity of Spin Valve, when making this Spin Valve materials processing, still can keep single domain structure to nanoscale.
Embodiment
Embodiment 1: utilize magnetic control sputtering device to prepare two kinds of Spin Valve materials: wherein a kind of is common spin valve structure, its multilayer film up is respectively metal tantalum (6nm)/Rhometal (7nm)/metallic copper (2.6nm)/Rhometal (4nm)/ferromanganese (15nm)/metal tantalum (6nm) by bottom, and (data are the thickness of film in the bracket, nm represents nanometer), be characterized in that electric current is parallel to plane configuration and the parallel face of the easy axle of magnetic anisotropy; Another is a dual-vertical spin valve arrangement of the present invention, be metal platinum (6nm)/[metallic cobalt (0.4nm)/metal platinum (2nm)] 5/ metallic cobalt (0.8nm)/metallic copper (3nm)/Co (0.8nm) [Pt (2nm)/Co (0.4nm)] 5/FeMn (15nm)/Pt (2nm) (index number is the repetition number of plies of composite structure), be characterized in that current vertical is in plane configuration and the vertical face of the easy axle of magnetic anisotropy.The detailed preparation technology of above-mentioned two kinds of Spin Valves is: sputtering chamber base vacuum degree is 2 * 10
-5Pa, argon gas during sputter (99.99%) press and are 0.5Pa; Substrate is cooled with circulating water, and is parallel to the magnetic field that the substrate direction is added with 250Oe for structure one material, to bring out parallel direction of easy axis; Be added with the magnetic field of 50Oe for structure two materials perpendicular to the substrate direction, to bring out vertical direction of easy axis.Two kinds of metallized multilayer films that sputter are processed to the element of 300nm * 300nm by the means of electron beam printing and ion etching.Test result shows that the Investigation on Room-temperature Magnetoresistance of dual-vertical spin valve device increases about 30% than common Spin Valve.In addition, the eddy current domain structure occurs around the common Spin Valve device, vertical spin valve then presents single domain structure.
Embodiment 2: Experiment Preparation goes out the dual-vertical spin valve device of ten kinds of structures, and structure such as following table are represented:
The present invention amounts to 30 with the dual-vertical spin valve device that three kinds of methods such as plasma sputtering, magnetron sputtering and molecular beam epitaxial growth are prepared above-mentioned ten kinds of structures respectively, and size of devices is 300 nanometers * 300 nanometers.By test, find that the magnetoresistance effect at room temperature of above-mentioned all these Spin Valves will improve more than 30% than the Spin Valve of common structure.The magnetic force microscopy test shows that these dual-vertical spin valve devices all demonstrate good single magnetic domain feature.
Claims (2)
1, a kind of dual-vertical spin valve is characterized in that: structure is:
The bottom of a, dual-vertical spin valve is the metal platinum of 1～20 nanometer thickness, is called bottom electrode layer;
B, up the second layer is a cobalt/platinum composite structure the end of from, and it is to replace overlapping forming for each 2～20 layers by metallic cobalt and metal platinum, and bottom is a metallic cobalt, top layer is a metal platinum, wherein the thickness of layer of metal cobalt is 0.1～0.4 nanometer, and the thickness of metal platinum layer is 1～3 nanometer, is called end composite bed;
C, the end of from up the 3rd layer be metallic cobalt, thickness is 0.1～1 nanometer;
D, the end of from up the 4th layer be metallic copper, thickness is 1～10 nanometer, is called separation layer;
E, up layer 5 is a metallic cobalt end of from, and thickness is 0.1～2 nanometer;
F, up layer 6 is another platinum/cobalt composite structure the end of from, is called as the top composite bed; It is to replace overlapping forming by 2～20 layers metal platinum and metallic cobalt, and bottom is a metal platinum, and top layer is a metallic cobalt, and wherein the thickness of metal platinum is 1～3 nanometer, and the thickness of metallic cobalt is 0.1～0.4 nanometer;
G, up layer 7 is anti-ferromagnetic ferromanganese or manganese alloy layer the end of from, and thickness is 5～40 nanometers;
H, the end of from up the 8th layer be the metal platinum of 1～10 nanometer, be top electrode layer.
2, according to the described dual-vertical spin valve of claim 1, it is characterized in that: separation layer is the metal platinum or the alundum (Al of 1～4 nanometer thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101018475A CN1297953C (en) | 2004-12-28 | 2004-12-28 | Method for preparing dual-vertical spin valve and its structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101018475A CN1297953C (en) | 2004-12-28 | 2004-12-28 | Method for preparing dual-vertical spin valve and its structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1641750A CN1641750A (en) | 2005-07-20 |
| CN1297953C true CN1297953C (en) | 2007-01-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004101018475A Expired - Fee Related CN1297953C (en) | 2004-12-28 | 2004-12-28 | Method for preparing dual-vertical spin valve and its structure |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110176254B (en) * | 2019-04-19 | 2020-12-29 | 北京大学（天津滨海）新一代信息技术研究院 | Magnetic field regulation and control storage device based on molecular spin state and data storage method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11185223A (en) * | 1997-12-25 | 1999-07-09 | Fujitsu Ltd | Spin valve head and its production as well as magnetic disk drive assembly using spin valve head |
| CN1356559A (en) * | 2001-11-13 | 2002-07-03 | 北京科大天宇微电子材料技术开发有限公司 | Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field |
| CN1479387A (en) * | 2002-07-24 | 2004-03-03 | ��ʿͨ��ʽ���� | Magnetic reluctance element with 'current perpendicular to plane' structure |
| CN1534605A (en) * | 2002-12-26 | 2004-10-06 | ��ʽ���綫֥ | Magnetic resistance element, magnetic reproducing head and magnetic reproducing apparatus |
-
2004
- 2004-12-28 CN CNB2004101018475A patent/CN1297953C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11185223A (en) * | 1997-12-25 | 1999-07-09 | Fujitsu Ltd | Spin valve head and its production as well as magnetic disk drive assembly using spin valve head |
| CN1356559A (en) * | 2001-11-13 | 2002-07-03 | 北京科大天宇微电子材料技术开发有限公司 | Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field |
| CN1479387A (en) * | 2002-07-24 | 2004-03-03 | ��ʿͨ��ʽ���� | Magnetic reluctance element with 'current perpendicular to plane' structure |
| CN1534605A (en) * | 2002-12-26 | 2004-10-06 | ��ʽ���綫֥ | Magnetic resistance element, magnetic reproducing head and magnetic reproducing apparatus |
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| CN1641750A (en) | 2005-07-20 |
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