JPH0992908A - Manufacture of magnetoresistance effect device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a magnetoresistance effect device wherein magnetoresistance change in which hysteresis does not substantially exist is exhibited, distortion of an output waveform can be restrained, and electromagnetic transducing efficiency can be increased. SOLUTION: When an actuation film 42 and a non-magnetic film 43 are formed on a substratum film 41 in this order, an applied magnetic field direction 21A is set to be the direction perpendicular to a signal magnetic field direction 21C. When a magnetization fixing film 44 and an anti-ferromagnetic film 45 are formed on the non-magnetic film 43 in this order, an applied magnetic field direction 21B is set to be the direction parallel to the signal magnetic field direction 21C (the direction perpendicular to the applied magnetic field direction 21A).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a magnetoresistive effect element, and more particularly to a spin valve type showing a giant magnetoresistive effect (GMR) for a magnetic recording device such as a magnetic sensor or a magnetic disk device. The present invention relates to a method of manufacturing a magnetoresistive effect element suitable for a reproducing head or the like.

[0002]

2. Description of the Related Art A magnetoresistive film (MR film) is a film made of a magnetic material exhibiting a magnetoresistive effect, and generally has a single-layer structure.

On the other hand, the GMR film has a multilayer structure in which a plurality of materials are combined. There are several types of structures that produce the GMR effect. Among them, the so-called spin valve film has a relatively simple structure and changes resistance with a weak magnetic field.

That is, such a spin valve film is formed by laminating a magnetic film, a non-magnetic conductor film, and a magnetic film in this order.
It has been reported that the layered film is the main component and exhibits a giant magnetoresistive (GMR) effect (Journal of Magnetics and Magnetic Materials, 93
Volume, 101 pages, 1991).

For example, in a magnetoresistive film having a spin valve structure in which a magnetic film is a Co film and a conductor film is a Cu film, antiparallel spin states occur under the action of an external magnetic field, and spin-dependent scattering occurs. Therefore, it is considered that a large magnetoresistive effect can be obtained.

FIG. 33 shows an example of a magnetoresistive effect element 16 having a spin valve structure. That is, on the ferrite substrate 11,
Magnetic film 12 made of permalloy (NiFe), nonmagnetic conductor film 13 containing Cu as a main component, and permalloy (NiFe)
A magnetic film 14 made of Co or Co and an antiferromagnetic film 15 made of FeMn are stacked in this order by a sputtering method to form a magnetoresistive effect portion 10 having a spin valve structure.

Magnetoresistive element having this spin valve structure
16 separates the two layers of magnetic films 12 and 14 by a thin non-magnetic film 13, and an antiferromagnetic film 15 is provided on one magnetic film 14, so that the magnetic film 14 in contact with the antiferromagnetic film 15 is provided. (This may be referred to as a magnetization fixed film hereinafter.) Is magnetized in a certain direction. Further, the other magnetic film 12 separated by the non-magnetic film 13 (which may be hereinafter referred to as an operating film) does not have a fixed magnetization direction. That is, the magnetization fixed film 14 has a large force (coercive force) for maintaining the once fixed magnetization direction, and the operating film 12 has a small coercive force. When a magnetic field is applied in this state, the operating film 12 is magnetized and the magnetization direction is determined.

The functions of each film forming the spin valve structure are summarized as follows. Operating film 12: Spin rotates with respect to a signal magnetic field (external magnetic field: Hext). Magnetization pinned film 14: The spin direction of the magnetic element is pinned parallel to the signal magnetic field direction by exchange coupling with the antiferromagnetic film 15. Non-magnetic film 13: a spacer that exhibits the GMR effect,
The resistance changes according to the relative angle of spin between the operating film 12 and the magnetization fixed film 14.

In the conventional magnetoresistive effect element, the direction of the signal magnetic field and the direction of the easy axis of magnetization of the operating film are the same.
Therefore, the change in the magnetic resistance due to the change in the signal magnetic field is 3 to
A hysteresis of 5 Oe (curve 102 in FIG. 36) is drawn, and noise is generated due to the Barkhausen effect. In order to eliminate this noise, a large operation stabilizing magnetic field is required, and since the reproduced waveform is distorted, the electromagnetic conversion efficiency of the reproducing head cannot be obtained and high density recording cannot be supported.

Therefore, in order to eliminate the above hysteresis, an element structure shown in FIG. 34 has been tried. That is, the magnetization easy axis direction 24 of the operating film 12 is set to intersect the signal magnetic field direction 21. The magnetic anisotropy of the operation film 12 is such that the easy axis 24 of the magnetization is parallel to the head ABS surface 23 and the sense current 26, and the magnetization fixed film 14 and the antiferromagnetic film immediately above (1 in FIG. 33).
5, the exchange coupling direction 25 with (not shown in FIG. 34) is fixed perpendicular to the head ABS surface 23 and parallel to the signal magnetic field direction 21. The ABS surface 23 is an air bearing surface.
Abbreviation of ce, which is the sliding surface of the magnetic recording medium (hereinafter the same).

The GMR effect of this magnetoresistive element is a resistance change depending on the relative angle θ between the spin 27 of the operating film 12 and the spin 25 of the magnetization fixed film 14, and this dependence is as shown in FIG. . The resistance change of the element is linear with point symmetry at θ = 0 within the range of θ from −90 degrees to 90 degrees. Therefore, since the magnetic resistance change Δρ linearly changes point-symmetrically with θ = 0 corresponding to the strength of the signal magnetic field 21, a slight change in the signal magnetic field is detected as the magnetic resistance change Δρ, and good reproduction is achieved. It should be done.

By the way, in principle, the easy magnetization axis direction 24 of the operation film 12 and the exchange coupling direction 25 of the magnetization fixed film 14 must be orthogonal to each other. In order to do this, the two films are formed in parallel with each other during film formation in a magnetic field in advance, and (1) the magnetic anisotropy direction of the operating film is utilized by utilizing the shape magnetic anisotropy associated with device formation. Is shifted by 90 degrees, (2) a device operation stabilizing magnetic field is applied parallel to the sense current direction 26 to shift the easy axis of magnetization of the operating film by 90 degrees, and (3) heat treatment is performed in a magnetic field to exchange coupling direction 25 90 against the easy axis of magnetization of the operating film
The staggering method was adopted.

The above methods (1) and (2) are both methods of twisting and bending the magnetic characteristics originally possessed by the operating film, which leads to deterioration of the magnetic characteristics of the magnetoresistive effect element. The above method (3) promotes thermal diffusion in each laminated film, and also causes thermal damage to the operating film, leading to dispersion of magnetic characteristics.

The change of the magnetic resistance due to the change of the signal magnetic field (Hext) of the sample (the laminated body before being made into the magnetoresistive effect element) by the method of the above (2) is as shown by the curve 103 in FIG. . Element operation stabilizing magnetic field strength is at least 20 Oe
It is necessary, and 25 Oe is added in this sample. Curve 103
Then, although hysteresis is no longer recognized, the change in magnetoresistance is not a linear change inherent to the magnetoresistive effect element, but a gentle change, and the behavior of the magnetoresistive effect element is naturally a linear resistance change. However, when used in a reproducing head, the reproduced signal waveform will be distorted.

The sample of curve 103 in FIG. 36 and the sample of curve 102 showing the above-mentioned hysteresis (fixed magnetic field direction at the time of film formation) were both subjected to DC magnetron sputtering to form a Ta film (thickness) as a base film. 6.7 nm), operating film 12
NiFe film (thickness 10.0 nm) as the non-magnetic film, Cu film (thickness 2.4 nm) as the non-magnetic film 15, Co film (thickness 2.2 nm) as the fixed magnetization film 14, FeMn film (thickness 10.0 as the antiferromagnetic film 15). nm) and a Ta film (thickness 8.0 nm) as a protective film having a laminated structure, and each Δρ is measured by a four-terminal method for resistance measurement.

[0016]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances and shows a magnetoresistance change substantially without hysteresis, which suppresses distortion of an output waveform and improves electromagnetic conversion efficiency. It is an object of the present invention to provide a method of manufacturing a magnetoresistive effect element, which can be increased.

[0017]

The present inventor has conducted extensive studies on the method of adjusting the angle formed by the direction of the easy axis of magnetization of the operating film and the exchange coupling direction of the fixed magnetization film, and as a result, Differently, it was found that the above object can be achieved by setting each of the above directions to a desired direction at the time of forming each film, and completed the present invention.

That is, according to the present invention, a laminated structure in which an operating layer in which a spin of magnetization rotates with respect to an external magnetic field, a non-magnetic layer, and a magnetic layer for fixing magnetization are laminated in this order or in the reverse order. In manufacturing a magnetoresistive effect element having a magnetic field, a direction of a magnetic field applied during formation of the operating layer to obtain an easy axis direction of magnetization of the operating layer and a magnetic direction of the magnetic layer to obtain a spin direction of magnetization of the magnetic layer. A method of manufacturing a magnetoresistive effect element, wherein the directions of the applied magnetic fields are changed in the process of forming the operating layer and the magnetic layer so that the directions of the magnetic fields applied when the layers are formed intersect with each other. Is.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, it is desirable that the angle formed by the direction of the applied magnetic field during film formation of the operating layer and the direction of the applied magnetic field during film formation of the magnetic layer is substantially 90 degrees.

Further, in the present invention, it is desirable to change the direction of the applied magnetic field at the time of forming the magnetic layer with respect to the direction of the applied magnetic field at the time of forming the operating layer.

Instead of the above, the direction of the applied magnetic field at the time of forming the nonmagnetic layer can be changed with respect to the direction of the applied magnetic field at the time of forming the operating layer.

Further, in place of the above, when the operation layer is formed,
The direction of the applied magnetic field can be changed with respect to the direction of the applied magnetic field when the magnetic layer is formed.

Alternatively, the direction of the applied magnetic field may be changed with respect to the direction of the applied magnetic field during the film formation of the magnetic layer during the film formation of the non-magnetic layer.

Further, in the present invention, it is desirable that the magnetization fixing magnetic layer is composed of a magnetic layer and an antiferromagnetic layer, and a magnetic field that induces the spin direction of the magnetization due to exchange coupling between them is applied.

In the above, the magnetization fixing magnetic layer is composed of a laminated body of a magnetic layer and an antiferromagnetic layer, and the spin direction of the magnetization of the magnetic layer is relative to the direction of the external magnetic field due to exchange coupling between them. It is desirable to set the direction of the applied magnetic field at the time of forming the magnetic layer so that they are parallel to each other.

Instead of the above, the direction of the applied magnetic field at the time of forming the magnetic layer can be changed with respect to the direction of the applied magnetic field at the time of forming the operating layer.

Alternatively, the direction of the applied magnetic field may be changed with respect to the direction of the applied magnetic field during the film formation of the operating layer when the antiferromagnetic layer is formed.

As an alternative to the above, the direction of the applied magnetic field can be changed during the film formation of the operating layer with respect to the direction of the applied magnetic field during the film formation of the magnetic layer.

Further, instead of the above, at the time of forming the non-magnetic layer,
The direction of the applied magnetic field can be changed with respect to the direction of the applied magnetic field when the magnetic layer is formed.

Further, instead of the above, a layer (for example, made of Ta) in which the antiferromagnetic layer is crystallographically oriented so as to be antiferromagnetic.
Can also be provided as a base layer having a laminated structure.

In the present invention, the magnetic layer for pinning the magnetization is formed of a hard magnetic material, and the hard magnetic layer is formed so that the spin direction of the hard magnetic layer is parallel to the external magnetic field. The direction of the applied magnetic field at that time can be set.

Further, in the present invention, above and below the laminated structure,
An upper magnetic pole and a lower magnetic pole made of a soft magnetic material may be provided respectively. The magnetic field sensitivity is increased by configuring these soft magnetic materials with, for example, a Ni—Fe alloy.

The present invention is extremely suitable as a method for manufacturing a spin valve giant magnetoresistive effect element.

A protective layer such as Ta is preferably provided on the laminated structure.

The magnetoresistive effect element in the present invention is a concept including not only the element itself such as the SV element but also the completed product such as the thin film magnetic head.

[0036]

EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples.

Example 1 The structure of a magnetoresistive effect element (SV element) having a spin valve structure in this example will be described with reference to FIG. The SV element 46A, as shown in FIG.
The base film 41, the operation film 42, the non-magnetic film (spacer) 43, the magnetic film (magnetization fixed film) 44, the antiferromagnetic film 45, and the protective film 40 are laminated in this order to form the magnetoresistive portion 50.

An upper magnetic pole and a lower magnetic pole of a soft magnetic material are provided above and below the laminated body, and a pair of extraction electrodes (see FIG. 15, which will be described later) are provided on both sides, but they are not shown here. .

As a concrete layer structure, Ta, Ti, Hf or the like is used as the base film 41, for example, about 5.0 nm (Ta in this example).
Film 6.7 nm), and operating film 42 made of NiFe or NiFeCo,
CoFe, CoNi, NiFe-X (X = Ta, Cr,
Nb, Rh, Zr, Mo, Hf, Cu, etc. are contained at 15 atomic% or less), CoZr-based amorphous, etc., for example, about 15.0 nm
The following (NiFe film 10.0 nm in this example), pure Cu, CuNi, CuAg, etc. as the non-magnetic film 43 is, for example, 1.8 to 3.0 nm.
(Cu film 2.4 nm in this example), and NiFe, NiFeCo, pure Co, CoF as the magnetic film (magnetization fixed film) 44.
e, CoNi, etc., for example, 1.0 to 5.0 nm (in this example pure Co
For example, 5.0 to 50.0 nm (FeMn film 10.0 nm in this example) is formed of FeMn, NiMn, NiO, NiCoO or the like as the antiferromagnetic film 45. Protective film
40 may be a non-magnetic film similar to the base film 41 (Ta film 8.0 nm in this example).

A DC magnetron sputtering apparatus schematically shown in FIG. 5 can be used to manufacture this SV element. In the figure, 57 is a target for the base film, 58 is a target for the operating film, 59 is a target for the non-magnetic film, 60 is a target for the fixed magnetization film, 61 is a target for the antiferromagnetic film,
62 is a target for the protective film, 63 is a shutter, 64 is the substrate 51
Is a rotating plate for setting the lower surface of the plate, and 65 is a vacuum container. When the base film and the protective film are made of the same material, the targets 57 and 62 can be one common target.

The vacuum container 65 is actually divided into, for example, individual chambers by a shield plate (not shown), and the substrate holder 64 is sequentially arranged around the rotary shaft 66 so as to extend over each chamber. Rotate by an angle. In each chamber, the shutter 63 is opened, the target is sputtered, and the above layers can be sequentially laminated on the substrate 51 through the openings provided in the shield plate.

This DC magnetron sputtering apparatus is designed to enhance the sputtering efficiency of the target with a magnet (not shown). As the sputtering conditions, Ar is used as the sputtering gas, the gas pressure is 0.5 Pa,
The film formation rate was 0.1 to 0.5 nm / sec.

The SV element 46A in this embodiment is a GMR.
As an effect element, it can be used as a recording / reproducing integrated thin film head for a hard disk drive, as will be described later with reference to FIGS. 15 and 16.

The functions of the above films are summarized below. Underlayer film 41: Necessary for orienting the antiferromagnetic film 45 in a crystallographic orientation that is antiferromagnetic. Operating film 42: Spin rotates with respect to a signal magnetic field (external magnetic field: Hext). Magnetic film (magnetization fixed film) 44: The spin direction of Co or the like is fixed in a direction parallel to the signal magnetic field direction by exchange coupling with the antiferromagnetic film 45. Non-magnetic film (spacer) 43: a spacer film that exhibits the GMR effect. The resistance changes according to the relative angle of spin between the operating film 42 and the magnetization fixed film 44. Protective film 40: Prevents deterioration of the spin valve film during the device manufacturing process.

What should be noted in this embodiment is that the SV
That is, the direction of the applied magnetic field at the time of forming each of the above-mentioned films forming the element is changed. This will be described with reference to FIGS. 1, 2 and 3.

First, as shown in FIG. 1A, a base film 41 is formed on a substrate (not shown), and then an operating film is formed thereon.
42 is formed into a film. The applied magnetic field direction 21A during film formation is
In this example, the signal magnetic field direction 21C is orthogonal to the signal magnetic field direction 21C (see FIG. 11D). Due to this applied magnetic field, the operating film 42
The direction 24 of the easy axis of magnetization is parallel to the applied magnetic field direction 21A.

Next, as shown in FIG. 1B, the operating film 42
A non-magnetic film (Cu film) 43 is formed on the above. The applied magnetic field direction at the time of this film formation is 21 A, and the Cu film 43 is non-magnetic. Therefore, the state of FIG.

Next, as shown in FIG. 1C, a non-magnetic film
A magnetization fixed film 44 is formed on 43. At the time of this film formation, the applied magnetic field direction 21B is the same as the applied magnetic field direction 21A shown in FIGS.
In a direction orthogonal to. As a result, the magnetization spin direction 25A of the magnetization fixed film 44 becomes parallel to the applied magnetic field direction 21B.

Next, as shown in FIG. 1D, an antiferromagnetic film 45 is formed on the magnetization fixed film 44, and a protective film 40 is further formed thereon.
To form a film. The direction of the applied magnetic field at the time of film formation is the same as 21B in the same figure (c), whereby the spin direction 25B of the magnetization of the antiferromagnetic film 45 is opposite to the applied magnetic field direction 21B (that is, , Which is the opposite direction to the spin direction 25A of the magnetization of the magnetization fixed film 44). Thus, due to the exchange coupling of both spins, the spin of the magnetization fixed film 44 (25A in FIG. 7C) is fixed as the exchange coupling direction 25C.

As described above, by rotating the applied magnetic field direction by 90 degrees during the formation of the magnetization fixed film 44, the change in the magnetic resistance due to the signal magnetic field becomes a good change without distortion. This will be described later with reference to FIG.

The relationship between the film formation and the direction of the applied magnetic field can be based on the procedure shown in FIGS. 2 and 3 in addition to that shown in FIG.
The method of FIG. 2 is a method of changing the applied magnetic field direction by 90 degrees when the non-magnetic film is formed next to the formation of the operating film, and the method of FIG. 3 is the method of forming an antiferromagnetic film next to the formation of the magnetization fixed film. This is a method of changing the applied magnetic field direction by 90 degrees during film formation.

In the method of FIG. 2, first, as shown in FIG. 3A, a base film 41 is formed on a substrate (not shown), and then an operating film 42 is formed thereon. The applied magnetic field direction 21A during film formation is the signal magnetic field direction 21C (see FIG. 7D).
On the other hand, in this example, the directions are orthogonal. Due to this applied magnetic field, the direction 24 of the easy axis of the operating film 42 becomes parallel to the applied magnetic field direction 21A.

Next, as shown in FIG. 2B, the operating film 42
A non-magnetic film (Cu film) 43 is formed on the above. During this film formation, the applied magnetic field direction 21B is set to the applied magnetic field direction 21A shown in FIG.
In a direction orthogonal to. Since the Cu film 43 is non-magnetic,
The state shown in FIG. 9A is maintained except that this film is formed.

Next, as shown in FIG. 2C, the non-magnetic film
A magnetization fixed film 44 is formed on 43. The direction of the applied magnetic field at the time of this film formation is 21B in the same figure (b). As a result, the spin direction 25A of the magnetization of the magnetization fixed film 44 is changed to the applied magnetic field direction 21B.
Will be parallel to.

Next, as shown in FIG. 2D, an antiferromagnetic film 45 is formed on the magnetization fixed film 44, and a protective film 40 is further formed thereon.
To form a film. The direction of the applied magnetic field at the time of film formation is the same as 21B in the same figure (c), whereby the spin direction 25B of the magnetization of the antiferromagnetic film 45 is opposite to the applied magnetic field direction 21B (that is, , Which is the opposite direction to the spin direction 25A of the magnetization of the magnetization fixed film 44). Thus, due to the exchange coupling of both spins, the spin of the magnetization fixed film 44 (25A in FIG. 7C) is fixed as the exchange coupling direction 25C.

As described above, by changing the direction of the applied magnetic field by 90 degrees when the magnetization fixed film 44 is formed, the change in the magnetic resistance due to the signal magnetic field becomes a good change without distortion.

In the method of FIG. 3, first, as shown in FIG. 3A, a base film 41 is formed on a substrate (not shown), and then an operating film 42 is formed thereon. The applied magnetic field direction 21A during film formation is the signal magnetic field direction 21C (see FIG. 7D).
On the other hand, in this example, the directions are orthogonal. Due to this applied magnetic field, the direction 24 of the easy axis of the operating film 42 becomes parallel to the applied magnetic field direction 21A.

Next, as shown in FIG. 3B, the operating film 42
A non-magnetic film (Cu film) 43 is formed on the above. The applied magnetic field direction at the time of this film formation is 21 A, and the Cu film 43 is non-magnetic. Therefore, the state of FIG.

Next, as shown in FIG. 3C, the non-magnetic film
A magnetization fixed film 44 is formed on 43. The applied magnetic field direction at the time of this film formation is also 21 A in the same figure (b). As a result, the spin direction 25A of the magnetization of the magnetization fixed film 44 becomes equal to the applied magnetic field direction 21A.
Will be parallel to.

Next, as shown in FIG. 3D, an antiferromagnetic film 45 is formed on the magnetization fixed film 44, and the protective film 40 is further formed thereon.
To form a film. At the time of forming these films, the direction of the applied magnetic field is set to 21B which is orthogonal to 21A in FIG. As a result, in the process of FIG. 3C, the magnetization spin direction 25 A of the magnetization fixed film 44 is
Is changed to a direction parallel to the sufficiently strong applied magnetic field 21B, and the spin direction of the antiferromagnetic film 45 becomes 25B, which is opposite to the applied magnetic field 21B. Thus, the spin of the magnetization fixed film 44 (25A in FIG. 11C) is fixed as the exchange coupling direction 25C.

As described above, by changing the applied magnetic field direction by 90 degrees during the formation of the magnetization fixed film 44, the change in the magnetic resistance due to the signal magnetic field becomes a good change without distortion. Hereinafter, as illustrated in FIGS. 1 to 3, a method of rotating the direction of the applied magnetic field at the time of film formation by 90 degrees on the way to make the easy axis of magnetization of the operating film and the exchange coupling direction of the fixed magnetization film orthogonal to each other. In this specification, this is called anisotropic exchange film formation. After stacking the films by anisotropic exchange film formation, they may be supplemented by the above-mentioned conventional methods (1) and (2), if necessary.

FIG. 14 shows the signal magnetic field (Hext) and the magnetic resistance (M) of the laminate sample according to this example (the sample according to the method of FIG. 1).
It is a graph which shows the relationship with R). The measuring method is the above figure
This is the same as that in 36, and the measurement results for each sample by anisotropic exchange film formation in FIGS. 2 and 3 were almost the same as those in FIG. In addition, in FIG. 14, the measurement results of the sample according to the above-described conventional method are also shown by imaginary lines.

The curve 101 of the sample according to this example shows no hysteresis, there is no possibility of noise generation due to the Barkhausen effect, and the change in the magnetic resistance is substantially linear, showing good magnetic characteristics.

Next, the procedure for setting the direction of the applied magnetic field during film formation as described above will be described with reference to FIG. 6 by taking the method of FIG. 1 as an example.

FIG. 6 is an internal plan view (sectional view taken along line VI-VI of FIG. 7) of the DC magnetron sputtering apparatus of FIG.

The inside of the vacuum container 65 is partitioned into six fan-shaped chambers 69A to 69F of the same size, and a pair of magnets (permanent magnets) 68, 68 are arranged on the rotary plate 64 so as to generate a magnetic field therebetween. It is fixed in parallel. In addition, the rotating plate 64,
The substrate holder 67 is rotatable with respect to the rotating plate 64 and the magnet 6
It is installed so as to surround 8, 68.

The magnets 68, 68 and the substrate holder 67 are moved in each chamber by rotating the rotating plate 64 which rotates continuously by 60 degrees.
It is located on the target of any one of 69A to 69F. In this apparatus, plasma is generated only for one predetermined target, and a film is formed on a substrate passing over the predetermined target. Therefore, the plasma oscillation position is changed corresponding to the position of the target in the order of film formation. If a film having a predetermined thickness cannot be obtained by one film formation, the substrate is allowed to pass through the plasma a plurality of times. In FIG. 6, the magnet, the substrate holder and the substrate in the chamber 69C for forming the non-magnetic film are shown by solid lines, and these in other chambers are shown by imaginary lines. Further, the substrate and the substrate on which the film has been formed are denoted by the symbol W (the same applies to FIGS. 17 and 27 described later).

A base film is formed on the substrate W loaded in the chamber 69A and supported by the substrate holder 67. The applied magnetic field direction at this time is 21 A (see FIG. 1A). Substrate W
Is provided with an orientation flat OF so that the direction of the easy axis of magnetization and the direction of spin due to the applied magnetic field can be determined.

The substrate W on which the base film is formed is the rotating plate 64.
The rotation of 60 degrees moves it onto the target in the chamber 69B, where the operating film is formed. The applied magnetic field direction during this film formation was 21 A, and as shown in FIG.
The direction 24 of the easy axis of magnetization of the operating film is parallel to the applied magnetic field direction 21A (parallel to the orientation flat).

The substrate W on which the operating film is formed moves to the target in the chamber 69C by the next 60-degree rotation of the rotating plate 64, and the nonmagnetic film is formed there. The substrate W on which the non-magnetic film is formed is moved to the chamber 69D by the next rotation of the rotating plate 64 by 60 degrees, and the substrate holder 67 is rotated by 90 degrees with respect to the rotating plate 64 during this movement.

This rotation is performed while the lever 81 fixed to the substrate holder 67 is in sliding contact with the column 72 standing on the fixing plate 71 (fixed to the peripheral wall 70 of the vacuum container) in the vacuum container 65 while the chamber 69C is being slid. This is done by rotating the substrate holder 67 as shown by the phantom line therein.

As a result, the substrate W moved to the chamber 69D
The direction of the applied magnetic field with respect to is the direction 21B orthogonal to the orientation flat OF (see FIG. 1C).
In this state, the magnetization fixed film is formed, and the spin 25A is generated in the direction orthogonal to the orientation flat OF.

The substrate W on which the magnetization fixed film is formed is a rotating plate.
The next 60-degree rotation of 64 moves to the target in the chamber 69E, where an antiferromagnetic film is formed.
As described in (d), the spin 25A of the magnetization fixed film is fixed as the exchange coupling direction 25C.

The substrate W on which the antiferromagnetic film is formed is a rotating plate.
The next rotation of 64 moves to chamber 69F, where a protective film is formed, and an anisotropic exchange-deposited laminate (FIG.
(Layered product of (d)) is completed.

The protective film is made of the same material as the base film (T in this example).
When the film is formed in a), the protective film can be formed in the chamber 69A used for forming the base film. In this case, the number of chambers can be reduced by one.

The anisotropic conversion film formation described with reference to FIG. 6 is a specific example of the method shown in FIG. 1. However, in the case of the method shown in FIGS. 2 and 3, the position of 90 ° rotation of the substrate holder is changed. However, it may be performed according to the above.

Next, the specific structure of the sputtering apparatus of FIG. 6 will be described with reference to FIGS.

FIG. 7 is a sectional view taken along line VII-VII of FIG.

The rotary shaft 66 is composed of the top plate 73 and the bottom wall of the vacuum container 65.
It is attached to 74 via a bearing 75. A fixed plate 71 is fixed to the peripheral wall 70 of the vacuum container, and a shutter 76 is fixed to the rotary shaft 66 immediately above the fixed plate 71, and a rotary plate 64 is fixed above the fixed plate 71 above the fixed shaft 71. . Shutter 76
As shown in FIG. 11, has a disc shape with an opening 76a provided at one location.

A substrate holder 67 is rotatably attached to the rotary plate 64 by a rotary shaft 77 between the rotary plate 64 and the shutter 76, and the substrate W supported by the substrate holder 67 is positioned above the opening 71a of the fixed plate 71. It is like this. A pair of magnets 68, 68 are fixed to the rotary plate 64, and the magnets 68, 68 are substrate holders.
Located within 67. A mechanism for fixing the magnet to the rotary plate is omitted in the drawing.

Below the opening 71a of the fixed plate 71, a crucible 78 containing a target is placed on the bottom wall 74 of the vacuum container 65, and the target in the crucible 78 is sputtered to form the substrate W.
Deposit on top. A shutter 79 is provided on the crucible 78 to open only during sputtering.

FIG. 8 is an enlarged sectional view of the substrate holder.
The substrate holder 67 has a donut shape, and the substrate W is supported at its peripheral portion by a donut-shaped supporting plate 67b attached to the side wall of the substrate holder 67, and sputtered particles are deposited on the surface of the substrate W through the opening 67a of the substrate holder. Be filmed. A pair of magnets 68, 68 are located opposite to each other on both sides of the opening 67a, the magnetic flux 21 becomes substantially parallel to the main surface of the substrate W, and a magnetic field is applied to the substrate W.

9 and 10 are enlarged views for explaining the rotation mechanism of the substrate holder. FIG. 9 is a sectional view taken along line IX-IX of FIG. 10, and FIG. 10 is a sectional view taken along line XX of FIG. Is.

The substrate holder 67 is fixed to the holder supporting plate 80, and is rotated by the rotating shaft 77 via the holder supporting plate 80.
It is rotatably attached to. The holder support plate 80 is provided with arcuate slits 80a, 80a at positions symmetrical with respect to the rotating shaft 77 within a range of 90 degrees. On the slits 80a, 80a, through holes 64a, 64a are formed in the rotating plate 64 and rotating shafts are provided. It is located symmetrically with respect to 77. Board holder 67 has pin 67
c and 67c are erected at symmetrical positions with respect to the rotation axis 77,
The pin 67c is inserted into the through hole 64a of the rotary plate through the slit 80a.

By the sliding contact with the pillar 72 of the lever 81 described above,
When the substrate holder 67 rotates, the pin 67c passes between both ends of the slit 80a, and when the angle of rotation reaches 90 degrees, the pin 67c contacts the surface of the slit end and the rotation is stopped. There is. That is, the slit 80a is formed in the substrate holder 67.
It plays the role of positioning the 90 degree rotation of. FIG.
In the drawing, the position of the slit when the substrate holder is rotated by 90 degrees is shown by an imaginary line. Thus, the substrate supported by the substrate holder 67 is rotated 90 degrees by the above 90 degrees rotation.

By configuring the sputtering apparatus as described above, the anisotropic exchange film formation described with reference to FIG. 6 is performed.

FIG. 12 shows the laminated body on which the film formation is completed as described above, and the base film 41 is formed on the Al ₂ O ₃ --TiC substrate 51 on which the surface layer 51a of Al ₂ O ₃ or SiO ₂ is formed. A magnetic resistance portion 50 is formed by sequentially laminating the operation film 42, the magnetic film 43, the magnetization fixed film 44, the antiferromagnetic film 45, and the protective film 40.
Then, this is made into an element having a predetermined size, and a magnetoresistive effect element 46A shown in FIG. 13 is obtained.

In the explanation of the anisotropic exchange film formation by FIG. 6, the film formation by the batch processing has been explained, but in actual production, it is desirable to form the film continuously. Figure 17
FIG. 7 is a schematic plan view of the inside of a sputtering apparatus similar to that of FIG. 6, which continuously performs anisotropic exchange film formation.

In the apparatus of FIG. 17, the inside of the vacuum container is 69A to 69G.
The chamber 69G serves as a load lock chamber for loading / unloading substrates. The substrate W is loaded into the chamber 69G, set in the substrate holder 67, and the inside of the chamber 69G is evacuated.
The film is moved to 69A to form a base film. During this film formation, the next substrate is loaded into the chamber 69G and set in the substrate holder, and the chamber 69G is evacuated.

In this way, the substrate is always positioned in the chambers 69A to 69F, and the same film formation as that described above is performed in the chambers 69A to 69F. The substrate W on which the protective film has been formed in the chamber 69F is transferred to the chamber 69G again, taken out from the vacuum container, and the next unprocessed substrate is loaded and set in exchange for this.

In this way, unprocessed substrates are loaded into the vacuum container one after another, and processed substrates are taken out from the vacuum container, and anisotropic exchange film formation is continuously performed with high productivity. To be done.

15 and 16 show an example in which the magnetoresistive effect element (SV element) 16A having the spin valve structure is used as a reproducing head in a recording / reproducing integrated thin film head for a hard disk drive. This reproducing head has a structure in which electrodes 17 and 18 are connected to the element 16A and the upper and lower sides thereof are sandwiched by magnetic shields 19. The reproducing head has a function of reproducing the signal magnetic field 21 from the magnetic recording medium 20. In the figure, + and − are magnetic poles in each magnetized region, and an arrow 22 is the direction of magnetized spin. The electrodes 17, 18 preferably have a laminated structure of, for example, a Cu film having a thickness of 100 nm and a Cr film having a thickness of 5 nm thereon.

<Embodiment 2> An SV element 46B according to this embodiment.
18, the stacking order between the base film 41 and the protective film 40 is reversed from that in the first embodiment, and the base film 41, the antiferromagnetic film 45, the magnetization fixed film 44, and the nonmagnetic film are The film 43, the operating film 42, and the protective film 40 are laminated in this order. The composition and thickness of each film are the same as in Example 1 above.

When FeMn or the like, which requires an underlayer film for inducing the antiferromagnetic property of the antiferromagnetic film 45, is used for the antiferromagnetic film 45, the underlayer film may be formed of, for example, the underlayer film 41 and N.
It is considered that a laminated body with an iFe film, a laminated body with the base film 41 and a Cu film, and the like are preferable.

The procedure of anisotropic exchange film formation in this example is as follows.
This will be described with reference to FIGS.

In the method of FIG. 19, first, as shown in FIG. 19A, a base film 41 is formed on a substrate (not shown), and then an antiferromagnetic film 45 is formed thereon. The applied magnetic field direction 21B at the time of film formation is parallel to the signal magnetic field direction 21C (see FIG. 7D) in this example.

Next, as shown in FIG. 19B, the magnetization fixed film 44 is formed on the antiferromagnetic film 45. The applied magnetic field direction at the time of this film formation is 21 B, and the spin direction of the magnetization of the magnetization fixed film 44 is parallel to the applied magnetic field 21 B, and the exchange coupling direction with the antiferromagnetic film 45 is 25 C. Fixed.

Next, as shown in FIG. 19C, a nonmagnetic film 43 is formed on the magnetization fixed film 44. The applied magnetic field direction at the time of this film formation was 21 B, and there was no change in the spin direction.

Next, as shown in FIG. 19D, the non-magnetic film
An operating film 42 is formed on 43, and a protective film 40 is further formed thereon. The direction of the applied magnetic field at the time of film formation is set to a direction 21A orthogonal to the applied magnetic field direction 21B and the signal magnetic field direction 21C. As a result, the easy axis of magnetization of the operating film 42 becomes the direction 24 parallel to the applied magnetic field direction 21A.

In the method of FIG. 20, first, as shown in FIG. 20A, a base film 41 is formed on a substrate (not shown), and then an antiferromagnetic film 45 is formed thereon. The applied magnetic field direction 21B at the time of film formation is parallel to the signal magnetic field direction 21C (see FIG. 7D) in this example.

Next, as shown in FIG. 20B, the magnetization fixed film 44 is formed on the antiferromagnetic film 45. The applied magnetic field direction at the time of this film formation is 21 B, and the spin direction of the magnetization of the magnetization fixed film 44 is parallel to the applied magnetic field 21 B, and the exchange coupling direction with the antiferromagnetic film 45 is 25 C. Fixed.

Next, as shown in FIG. 20C, a nonmagnetic film 43 is formed on the magnetization fixed film 44. The applied magnetic field direction at the time of this film formation is the direction 21A orthogonal to 21B, but there is no change in the spin direction.

Next, as shown in FIG. 20D, a non-magnetic film
An operating film 42 is formed on 43, and a protective film 40 is further formed thereon. The direction of the applied magnetic field during film formation is shown in FIG.
21A, which makes the easy axis of magnetization of the operating film 42 a direction 24 parallel to the applied magnetic field 21A.

As described above, the anisotropic exchange film formation is carried out by the method shown in FIGS. 19 and 20 as in the method shown in FIGS. 1, 2 and 3 of the first embodiment. .

FIG. 21 shows a laminated body in which the film formation is completed as described above, and a base film 41 is formed on an Al ₂ O ₃ --TiC substrate 51 on which a surface layer 51a of Al ₂ O ₃ or SiO ₂ is formed. The anti-ferromagnetic film 45, the magnetization fixed film 44, the non-magnetic film 43, the operating film 42, and the protective film 40 are sequentially laminated to form the magnetoresistive portion 50.
Then, this is formed into an element having a predetermined size to obtain a magnetoresistive effect element 46B shown in FIG. Others are the same as in the first embodiment.

<Embodiment 3> This embodiment is an example in which a hard magnetic film is used instead of the lamination of the magnetization fixed film and the antiferromagnetic film in the above Embodiment 1.

As shown in FIG. 23, the SV element 96A according to this embodiment has a base film 41, an operating film 42, a nonmagnetic film 43, and a hard magnetic film.
47 and the protective film 40 are laminated in this order to form the magnetoresistive portion 50. The hard magnetic film 47 is made of CoPt, CoPtCr, C
Any hard magnetic material such as oCrTa can be used as long as it is used in a normal thin film recording medium. In this example CoP
The thickness is set to 5.0 nm by using t. Further, in some cases, the base film 41 and the protective film 40 are not necessary. The material and thickness of each film other than the hard magnetic film are the same as those in the first embodiment.

Next, the procedure of anisotropic exchange film formation in this example will be described with reference to FIG.

First, as shown in FIG. 10A, a base film 41 is formed on a substrate (not shown), and then an operating film is formed thereon.
42 is formed into a film. The applied magnetic field direction 21A during film formation is
In this example, the signal magnetic field direction 21C is orthogonal to the signal magnetic field direction 21C (see FIG. 11D). Due to this applied magnetic field, the operating film 42
The direction 24 of the easy axis of magnetization is parallel to the applied magnetic field direction 21A.

Next, as shown in FIG. 24B, the operating film 42
A non-magnetic film (Cu film) 43 is formed on the above. The applied magnetic field direction at the time of this film formation is 21 A, and the Cu film 43 is non-magnetic. Therefore, the state of FIG.

Next, as shown in FIG. 24C, a non-magnetic film
A hard magnetic film 47 is formed on 43, and a protective film 40 is further formed thereon. In forming the hard magnetic film, it is not necessary to form the film in a magnetic field. After the film is formed, a magnetic field sufficiently larger than the coercive force of the hard magnetic film is applied in the 21B direction to magnetize the spin film. Fix it.

FIG. 25 shows a laminated body in which the film formation is completed as described above, and a base film 41 is formed on an Al ₂ O ₃ —TiC substrate 51 on which a surface layer 51a of Al ₂ O ₃ or SiO ₂ is formed. The magnetoresistive portion 50 is formed by sequentially stacking the operating film 42, the nonmagnetic film 43, the hard magnetic film 47, and the protective film 40. Then, by making this into a predetermined size, a magnetoresistive effect element 96A shown in FIG. 27 is obtained.

FIG. 27 is an internal plan view similar to FIG. 6 of the sputtering apparatus in this example (by the method of FIG. 24).

The vacuum container 65 is partitioned into four chambers 169A to 169D.

The substrate W is loaded into the chamber 169A and set in the substrate holder 167. After the chamber 169A is evacuated, the base film is formed.

The substrate W on which the base film is formed is the chamber 1
Moving to 69B, an operating film is formed here.

The substrate W on which the operating film is formed is the chamber 1
It moves to 69C, and a nonmagnetic film is formed here. The substrate W on which the nonmagnetic film has been formed moves to the chamber 169D.

A hard magnetic film is formed here on the substrate W that has moved to the chamber 169D, and then returns to the chamber 169A again, where a protective film is formed. The substrate W having the protective film formed thereon is discharged from the chamber 169A to the outside of the vacuum container 65.

The film formation shown in FIG. 24 is performed as described above.

When the substrates are successively loaded into the vacuum container and the film formation is continuously performed, the interior of the vacuum container 65 is divided into six chambers 69A to 69F as shown in FIG. Is a load lock chamber for loading and unloading substrates, and the chambers 69A to 69E are processed in the same manner as described with reference to FIG.
Then, a base film, an operating film, a non-magnetic film, a hard magnetic film, and a protective film are sequentially formed.

<Embodiment 4> The SV element 96B according to the present embodiment.
29, the stacking order between the base film 41 and the protective film 40 is reversed from that in the third embodiment, and the base film 41, the hard magnetic film 47, the nonmagnetic film 43, and the operating film 42 are formed. The protective film 40 is laminated in this order. The composition and thickness of each film are the same as in Example 3 above. The SV element 96B is manufactured by the following procedure.

First, as shown in FIG. 30A, a base film 41 is formed on a substrate (not shown), and then a hard magnetic film 47 is formed thereon. Next, as shown in FIG. 30B, a nonmagnetic film (Cu film) 43 is formed on the hard magnetic film 47. next,
As shown in FIG. 30C, the operating film 42 is formed on the nonmagnetic film 43, and the protective film 40 is further formed thereon. At the time of film formation, the applied magnetic field direction 21A is set to a direction orthogonal to the applied magnetic field direction 21B in FIGS. As a result, the direction of the easy axis of the operating film 42 becomes parallel to the applied magnetic field 21A.

Even when the hard magnetic film 47 is formed first as in this example, the magnetic field direction at the time of forming the operating film 42 only needs to be 21 A, and the coercive force of the hard magnetic film is larger than the coercive force of the hard film after the film formation. By applying a sufficiently large magnetic field in the 21B direction, the hard magnetic film is fixed in the spin 21B direction.

FIG. 31 shows the laminated body in which the film formation is completed as shown in FIG. 30, and is formed on the substrate 51 of Al ₂ O ₃ —TiC on which the surface layer 51a of Al ₂ O ₃ or SiO ₂ is formed. Formation 41,
A hard magnetic film 47, a non-magnetic film 43, an operating film 42, and a protective film 40 are sequentially laminated to form a magnetoresistive portion 50. Then, this is made into a predetermined size element, and the magnetoresistive effect element 96 shown in FIG.
B is obtained.

When the relationship between the signal magnetic field and the magnetoresistance (MR) was determined for the laminated body samples according to the above-mentioned Examples 2, 3 and 4, the same result as in FIG. 14 in the above-mentioned Example 1 was obtained.

As described above, in any of the above-described embodiments, anisotropic exchange film formation in which the direction of the applied magnetic field is shifted by 90 degrees during the appropriate film formation of the respective films is
Without showing hysteresis, it is possible to suppress the element operation stabilizing magnetic field, reduce the distortion of the reproduction output waveform, suppress the deterioration of electromagnetic conversion efficiency, and support high density recording.

Although the embodiments of the present invention have been described above, the above embodiments can be further modified based on the technical idea of the present invention.

For example, in the above-mentioned SV element or head, the number of laminated layers, the thickness of each layer, the material, etc. may be variously changed.

The structure of the head described above can be modified so that it can be applied to various applications as a magnetic field detection head.

Although the DC magnetron sputtering method is used in the above embodiment, the film may be formed by another sputtering method. In addition, the film may be formed by an evaporation method or the like without being limited to the sputtering method.

[0131]

According to the present invention, an operating layer in which the spin of magnetization rotates with respect to an external magnetic field, a non-magnetic layer, and a magnetic layer for fixing magnetization are laminated in this order or in the reverse order. In manufacturing a magnetoresistive element having a structure, the direction of a magnetic field applied during formation of the operating layer to obtain the easy axis direction of magnetization of the operating layer and the spin direction of magnetization of the magnetic layer are obtained. Since the directions of the applied magnetic fields are changed in the process of forming the operating layer and the magnetic layer so that the directions of the magnetic fields applied when forming the magnetic layer intersect with each other, the directions of the applied magnetic fields are changed. The operation stabilizing magnetic field can be reduced and the distortion of the output waveform can be reduced as compared with the conventional method of not performing the above or performing the process of changing the direction of the easy axis of the operation layer after the film formation of each layer is completed.

As a result, the magnetoresistive effect element manufactured by the method according to the present invention can improve the electromagnetic conversion efficiency and increase the recording density.

[Brief description of drawings]

FIG. 1 is a partially cutaway schematic perspective view showing a procedure of anisotropic exchange film formation according to a first embodiment of the present invention.

FIG. 2 is a partially cutaway schematic perspective view showing another procedure of the anisotropic exchange film formation.

FIG. 3 is a partially cutaway schematic perspective view showing still another procedure of the anisotropic exchange film formation.

FIG. 4 is a schematic perspective view of the same SV element.

FIG. 5 is a schematic perspective view of a sputtering apparatus used for manufacturing the same SV element.

FIG. 6 is an internal plan view (cross-sectional view taken along line VI-VI of FIG. 7) of the sputtering apparatus.

7 is a sectional view taken along line VII-VII of FIG.

FIG. 8 is a sectional view of the substrate holder.

FIG. 9 is a cross-sectional view (cross-sectional view taken along the line IX-IX in FIG. 10) showing how to attach the substrate holder to the rotary plate.

FIG. 10 is an enlarged partial plan view showing a rotation mechanism of the substrate holder with respect to the rotating plate.

FIG. 11 is a plan view of a shutter just below the substrate holder.

FIG. 12 is a perspective view of an SV element material on which the same film formation has been completed.

FIG. 13 is a perspective view of the SV element.

FIG. 14 is a graph showing the relationship between the signal magnetic field and the change in magnetoresistance compared with a conventional example.

FIG. 15 is a perspective view of a main part of a reproducing thin film MR head using the same SV element.

FIG. 16 is a schematic perspective view showing the action of a signal magnetic field by the magnetic recording medium.

FIG. 17 is an internal plan view of the sputtering apparatus for the continuous film forming process.

FIG. 18 is a schematic perspective view of an SV element according to a second embodiment of the present invention.

FIG. 19 is a partially cutaway schematic perspective view showing a procedure of the anisotropic exchange film formation.

FIG. 20 is a partially cutaway schematic perspective view showing another procedure of the anisotropic exchange film formation.

FIG. 21 is a perspective view of an SV element material on which the same film formation has been completed.

FIG. 22 is a perspective view of the SV element.

FIG. 23 is a schematic perspective view of an SV element according to a third embodiment of the present invention.

FIG. 24 is a partially cutaway schematic perspective view showing a procedure of the anisotropic exchange film formation.

FIG. 25 is a perspective view of the SV element material on which the same film formation has been completed.

FIG. 26 is a perspective view of the same SV element.

FIG. 27 is an internal plan view of the sputtering apparatus.

FIG. 28 is an internal plan view of the same continuous film forming sputtering apparatus.

FIG. 29 is a schematic perspective view of an SV element according to a fourth embodiment of the present invention.

FIG. 30 is a partially cutaway schematic perspective view showing a procedure of the anisotropic exchange film formation.

FIG. 31 is a perspective view of the same SV element material.

FIG. 32 is a perspective view of the SV element.

FIG. 33 is a schematic cross-sectional view of a conventional SV element.

FIG. 34 is an operation principle diagram of the same SV element.

FIG. 35 is a graph showing a relationship between a relative angle formed by a spin direction of the operation film and a fixed spin of the magnetization fixed film and a change in magnetoresistance.

FIG. 36 is a graph showing the relationship between the signal magnetic field and the change in magnetic resistance.

[Explanation of symbols]

10, 50 ... Magnetoresistive effect section 11, 51 ... Substrate 12, 42 ... Operating film 13, 43 ... Non-magnetic film 14, 44 ... Magnetization fixed film 15, 45 ... Ferromagnetic film 16, 46A, 46B, 96A, 96B ... Magnetoresistive effect element (SV element) 17, 18 ... Electrodes 21A, 21B ... Applied magnetic field direction 21C ... Signal magnetic field (external magnetic field) direction 24 ... Easy magnetization axis 25B ... Antiferromagnetic film spin direction 25C ... Spin exchange coupling direction 25D ... Hard magnetic film spin direction 26 ... Sense current direction 27 ... Operating film Spin direction 40 ... Protective film 41 ... Underlayer film 47 ... Hard magnetic film 63, 79 ... Shutter 64 ... Rotating plate 64a, 80a ... Through hole 65 ... Vacuum container 66 , 77 ... Rotating shafts 67, 167 ... Substrate holders 67a, 71a ... Openings 67c ... Pins 68 ... Magnets 69A to 69G, 169A to 169F ... Chamber 70 ... Peripheral wall 71.・Fixed plate 72 ・ ・ ・ Column 74 ・ ・ ・ Bottom wall 78 ・ ・ ・ Crucible 80 ・ ・ ・ Holder support plate 80a ・ ・ ・ Slit 81,181 ・ ・ ・ Lever 101, 102, 103 ・ ・ ・ SV element sample data Curve W ... Deposition substrate θ: Relative angle between the spin direction of the operating film and the spin exchange coupling direction of the magnetization fixed film Hext ... Signal (external) magnetic field

Claims (16)

[Claims] 1. A magnetoresistive device having a laminated structure in which an operating layer in which a spin of magnetization rotates with respect to an external magnetic field, a nonmagnetic layer, and a magnetic layer for fixing magnetization are laminated in this order or in the reverse order. In manufacturing the effect element, during the formation of the magnetic layer in order to obtain the direction of the magnetic field applied during the formation of the operation layer in order to obtain the magnetization easy axis direction of the operation layer and in the spin direction of the magnetization of the magnetic layer. A method of manufacturing a magnetoresistive effect element, wherein the direction of each applied magnetic field is changed in the process of forming each of the operating layer and the magnetic layer so that the directions of the applied magnetic fields intersect each other. 2. The angle formed by the direction of the applied magnetic field during film formation of the operating layer and the direction of the applied magnetic field during film formation of the magnetic layer is substantially 90.
The manufacturing method according to claim 1, wherein the manufacturing method is performed in degrees. 3. The direction of the applied magnetic field at the time of forming the magnetic layer
Change with respect to the direction of the applied magnetic field during the formation of the operating layer,
The method according to claim 1. 4. The manufacturing method according to claim 1, wherein the direction of the applied magnetic field is changed with respect to the direction of the applied magnetic field during the film formation of the operation layer during the film formation of the nonmagnetic layer. 5. The direction of the applied magnetic field at the time of film formation of the operating layer,
Change with respect to the direction of the applied magnetic field during the formation of the magnetic layer,
The method according to claim 1. 6. The manufacturing method according to claim 1, wherein the direction of the applied magnetic field is changed with respect to the direction of the applied magnetic field when the magnetic layer is formed, when the nonmagnetic layer is formed. 7. The manufacturing method according to claim 1, wherein the magnetization-fixing magnetic layer is composed of a magnetic layer and an antiferromagnetic layer, and a magnetic field that induces a spin direction of magnetization due to exchange coupling between them is applied. . 8. The magnetization pinning magnetic layer is composed of a laminated body of a magnetic layer and an antiferromagnetic layer, and the exchange coupling between the layers causes the direction of the spin of the magnetization of the magnetic layer with respect to the direction of the external magnetic field. The manufacturing method according to claim 7, wherein the directions of the applied magnetic fields when forming the magnetic layers are set so as to be parallel to each other. 9. The direction of the applied magnetic field at the time of forming the magnetic layer,
Change with respect to the direction of the applied magnetic field during the formation of the operating layer,
The manufacturing method according to claim 7. 10. The manufacturing method according to claim 7, wherein the direction of the applied magnetic field is changed with respect to the direction of the applied magnetic field during the film formation of the operation layer during the film formation of the antiferromagnetic layer. 11. The direction of the applied magnetic field at the time of film formation of the operating layer,
Change with respect to the direction of the applied magnetic field during the formation of the magnetic layer,
The manufacturing method according to claim 7. 12. The manufacturing method according to claim 7, wherein the direction of the applied magnetic field is changed with respect to the direction of the applied magnetic field during the film formation of the magnetic layer during the film formation of the non-magnetic layer. 13. The manufacturing method according to claim 7, wherein a layer for crystallizing the antiferromagnetic layer so as to be antiferromagnetic is provided as a base layer of a laminated structure. 14. A magnetic layer for pinning magnetization is formed of a hard magnetic material, and an applied magnetic field at the time of film formation of the hard magnetic layer such that spin directions of the hard magnetic layer are parallel to an external magnetic field. The manufacturing method according to claim 1, wherein a direction is set. 15. The manufacturing method according to claim 1, wherein an upper magnetic pole and a lower magnetic pole made of a soft magnetic material are provided above and below the laminated structure. 16. The manufacturing method according to claim 1, which is a method for manufacturing a spin-valve giant magnetoresistive effect element.