CN1296775C

CN1296775C - Manufacturing method of base plate electro-optical device and making method of electro-optical device

Info

Publication number: CN1296775C
Application number: CN 200310100065
Authority: CN
Inventors: 大竹俊裕; 松尾睦
Original assignee: Seiko Epson Corp
Current assignee: Seiko Epson Corp
Priority date: 2002-10-11
Filing date: 2003-10-08
Publication date: 2007-01-24
Anticipated expiration: 2023-10-08
Also published as: CN1497352A

Abstract

A photosensitive resin applied onto a substrate is exposed using a mask. In this exposure step, by appropriately setting the size of each light transmitting portion formed in the mask and an exposure gap, an exposure intensity profile on a surface of a photosensitive resin is formed so as to have an increasing and decreasing curve along the surface thereof. When the exposure is performed in accordance with the exposure intensity profile, followed by development, a resin layer having surface irregularities is formed. Subsequently, a reflection layer made of a metal thin film or the like is formed on this resin layer.

Description

The manufacture method of substrate for electrooptic device and the manufacture method of electro-optical device

Technical field

The present invention relates to the manufacture method and the electro-optical device of substrate for electrooptic device, particularly relate to the reflection substrate and the electro-optical device that on the resin bed that the concave-convex surface shape is arranged, have the reflection horizon.

Background technology

Generally, in a kind of liquid crystal indicator, be formed for catoptrical reflection horizon sometimes as electro-optical device.This reflection horizon is normally in order to constitute reflection-type liquid-crystal display device setting, and this reflection-type liquid-crystal display device is to utilize by reflecting the reflected light that outer light generates, and makes the optical states of corresponding liquid crystal and the image that constitutes becomes visual.In addition, also knownly by a part transmittance section etc. is set and forms the Transflective layer, can realize that transmission-type shows and the liquid crystal indicator of the both sides' of reflection-type demonstration Transflective in the reflection horizon.

But known have a following problem, promptly, as if being constituted, above-mentioned reflection horizon has reflecting surface smooth on the optics, then since the outer light of incident by reflecting surface direct reflection smooth on the optics, the observer is dazzled because of the illumination reflection of light produces and background is appeared before one's eyes etc., the visual variation of display frame.

Therefore, propose variously to constitute concavo-convexly by the reflecting surface with the reflection horizon, appropriate scattered reflection light reduces and even prevents dazzling and technology that background is appeared before one's eyes because of above-mentioned illumination light.For example, in the liquid crystal indicator of Transflective, have by glass surface is constituted fluting by etching etc. glassyly, reflection horizon such as metallic aluminium film are set on it, form concavo-convex reflecting surface.

In addition, as the other method that forms above-mentioned concavo-convex reflecting surface, have by on glass substrate, applying photoresist, this photoresist is adopted the mask graph of regulation to expose and develops, formation has the resin bed or the discrete resin bed that is provided with of concaveconvex shape, by heating and dissolve an end of this resin bed, make concaveconvex shape about a certain become level and smooth after, apply organic resin again, form milder concave-convex surface shape, on this surface, form the method in reflection horizon afterwards.

But, in the above-mentioned existing method, form the concaveconvex shape of appropriateness for basal surface in the reflection horizon, the heating-up temperature of the accurate management of needs, the etching condition (for example composition of etching solution and etching period etc.) of adjusting base plate glass, resin bed and heat time heating time etc., therefore be difficult to correct and repeatability and obtain the concaveconvex shape of reflecting surface well, and the etching work procedure that needs the 2nd stage, resin bed with 2 layers of structure of needs formation, so it is elongated to have manufacturing time, the problem that manufacturing cost rises.In addition, if the angular distribution by the definite scattered light of the concaveconvex shape of reflecting surface has deviation, then outer light can not be effectively utilized in demonstration, the brightness that might cause showing deepening, special angle sharply changes and viewing angle characteristic narrows down in fact etc., produces unfavorable condition on the display quality.

Summary of the invention

Therefore, the present invention proposes in order to address the above problem, and its purpose is to provide can be rapider than prior art and the manufacture method of the substrate for electrooptic device of the concaveconvex shape of low-cost manufacturing reflecting surface and the manufacture method of electro-optical device.In addition, by improving the scattering properties of reflecting surface, can improve the display quality of the reflection-type demonstration of electro-optical device than prior art.

In order to address the above problem, the manufacture method of substrate for electrooptic device of the present invention adopts has the mask graph of transmittance section and light shielding part to being configured in the exposure process that has photosensitive resin to expose on the substrate, the developing procedure of the above-mentioned resin that development is exposed, form operation with the reflection horizon that on above-mentioned resin, forms the reflection horizon, it is characterized in that, decentralized configuration constitutes the above-mentioned transmittance section of a plurality of islands on the aforementioned mask figure, above-mentioned light shielding part will be set to around the above-mentioned transmittance section, in above-mentioned exposure process, the state that is curved surface shape increase and decrease with the distribution of the exposure intensity on the above-mentioned resin surface along this surface exposes, by exposure wavelength lambda being located in the scope of 300～450nm, the diameter of the above-mentioned transmittance section of aforementioned mask figure is located in the scope of 9～12 μ m and sets the optical diffraction angle, be located at the propagation of setting the diffraction light that depends on the aforementioned mask figure in the scope of 150～250 μ m by exposing clearance with aforementioned mask figure and above-mentioned interlaminar resin, in above-mentioned developing procedure, by on above-mentioned resin bed, forming the recess of corresponding above-mentioned transmittance section, form resin bed with the concaveconvex shape that distributes corresponding to above-mentioned exposure intensity, form in the operation in above-mentioned reflection horizon, on above-mentioned resin bed, form reflection horizon with the reflecting surface that has reflected above-mentioned concaveconvex shape.

According to this invention, by will there be the exposure intensity distribution on the photosensitive resin surface to constitute increase and decrease on curved surface surfacewise at exposure process, expose with this exposure intensity distribution, form the resin bed of the concave-convex surface shape have corresponding an exposure intensity distribution at developing procedure, do not need the etching work procedure in 2 stages and the resin bed of 2 layers of structure of formation, can form the concave-convex surface shape with the graphical operation in 1 stage, so can be rapidly and have a substrate for electrooptic device of concavo-convex reflecting surface with the low cost manufacturing.

In the prior art, adopted in utilization photolithographic graphical and when resin bed forms the concave-convex surface shape, general because too precipitous by the graphical concaveconvex shape that forms, so make concaveconvex shape mild by heating, on it, form the 2nd layer of resin bed again.But, among the present invention, by suitably setting transmittance section or the size of light shielding part and the exposing clearance between mask graph and photoresist of mask graph respectively, utilize the transmittance section of mask graph or the size of light shielding part to adjust the diffraction of light angle, utilize exposing clearance G to adjust the propagation of the diffraction light of mask graph, exposure intensity is distributed becomes the state of curved surface shape increase and decrease, makes the concave-convex surface shape of the resin bed that forms by developing become desirable curved concaveconvex shape.Like this, owing to, can adjust the abruptness or the mild property of surperficial concaveconvex shape, can form the resin bed of concave-convex surface shape by 1 exposure imaging operation with appropriateness by adjusting the size and the exposing clearance of transmittance section or light shielding part.

Generally, if the concave-convex surface shape of resin bed is too precipitous, then because the catoptrical scattering angle that the reflection horizon that forms on it causes becomes big, so the normal reflection rate reduces visual deepening.On the contrary, if the concave-convex surface shape of resin bed is too mild, then the catoptrical scattering angle that causes owing to the reflection horizon that forms on it diminishes, so the normal reflection rate becomes greatly, its as a result image brighten, but reflecting surface near the part of minute surface because of illumination dazzle and background mirrors and becomes remarkable.Thereby, need form the curved surface shape of curvature appropriateness by concave-convex surface shape with resin bed, desirable brightness and observability are taken into account.At this, only adjust the diameter of transmittance section of mask graph and the side in the exposing clearance, be difficult to increase and decrease that exposure intensity is distributed concave-convex surface shape corresponding to appropriateness.For example, only increase and decrease the diameter of transmittance section,, only be difficult to adjust the curvature of concaveconvex shape basically with the cycle variation of concaveconvex shape owing to do not have much variations about the diffraction of exposure wavelength lambda with the concavo-convex cycle of mask graph and the restriction of aperture rate.In addition, only increase and decrease exposing clearance,, only be difficult to change the curvature of concaveconvex shape with the increase and decrease exposure range according to the diameter of transmittance section, excessive with curved transition because of the variation concaveconvex shape of exposing clearance, therefore still be difficult to form the resin bed of concave-convex surface shape with appropriateness.In addition, the present invention is a concave-convex curved surface shape of controlling the surf zone of the resin bed of the borderline region of corresponding transmittance section or light shielding part, and a part that is included in the resin bed that departs from this surf zone forms the occasion of par.In addition, thereby also comprise by not having the part resin bed in the position of departing from above-mentioned surf zone, the part basal surface becomes the occasion of the state that exposes.Big many parts of resin layer surface constitute level and smooth concave-convex curved surface shape and get final product, even have par and substrate exposed division in a part, also can obtain the good optical characteristic.

Among the present invention, preferably constitute the above-mentioned transmittance section of a plurality of islands by decentralized configuration in the aforementioned mask figure, what make above-mentioned transmittance section becomes above-mentioned light shielding part on every side, forms the recess of corresponding above-mentioned transmittance section on the surface of above-mentioned resin bed.At this, quilt becomes recess by the part of the light exposure of the transmittance section of mask graph.At this moment, owing to size and above-mentioned space change by the transmittance section pass through about the diffraction of light of transmittance section, so can constitute the surface configuration of level and smooth recess.

At this, preferably the exposure wavelength lambda with above-mentioned exposure process is located in the scope of 300～450nm, and the diameter of above-mentioned transmittance section is located in the scope of about 9～12 μ m, above-mentioned exposing clearance is located in the scope of about 150～250 μ m.Like this, be set in the above-mentioned scope by diameter the transmittance section, can be with the light of suitable angle diffraction by the transmittance section, and by exposing clearance G is set in the above-mentioned scope, can adjust the spreading range of diffraction light, therefore can on the surface of photoresist, form the curved exposure intensity that possesses appropriate curvature and distribute.

Among the present invention, preferably by constitute the above-mentioned light shielding part of island in aforementioned mask figure decentralized configuration, what make above-mentioned light shielding part becomes above-mentioned transmittance section on every side, forms the protuberance of corresponding above-mentioned light shielding part on the surface of above-mentioned resin bed.At this, the part of the light shielding part shading of the masked figure of light becomes protuberance.At this moment, owing to about can utilizing the size of light shielding part and above-mentioned space change to diffraction of light, therefore can constitute the surface configuration of level and smooth protuberance by light shielding part beam split crested.

At this, preferably the exposure wavelength lambda with above-mentioned exposure process is located in the scope of 300～450nm, and the diameter of above-mentioned light shielding part is located in the scope of about 8～12 μ m, above-mentioned exposing clearance is located in the scope of about 60～100 μ m.Decentralized configuration in the mask graph of light shielding part of island, usually, because the area of transmittance section is also bigger than the mask graph of the island light shielding part that disperses configuration, it is big that the aperture rate becomes, so need reduce diffraction light by the canted exposure gap smaller that makes protuberance.In addition, general increase corresponding to mask aperture rate also needs to make exposure intensity to reduce.For example, with decentralized configuration the occasion of mask graph of aperture rate about 30% of island light shielding part compare, during the mask graph of shading rate about 30% (aperture rate about 70%) of island transmittance section that used decentralized configuration, the pact that preferably exposure intensity is set at the former is about half.

Among the present invention, preferably have after above-mentioned reflection horizon forms operation, the transmissive portions of removing the part in above-mentioned reflection horizon and forming transmissive portions forms operation.Thus, can constitute the substrate for electrooptic device of Transflective with transmissive portions.

At this, above-mentioned transmissive portions forms in the operation, and a best part with above-mentioned reflection horizon comes along the part except that the above-mentioned resin bed under it.Thus, by not having resin bed at transmissive portions, what can prevent that transmission-type from showing is painted etc.

Below, the manufacture method of electro-optical device of the present invention is to have the electro-optical substance of comprising, be used for giving structure to the electric field that this electro-optical substance applies electric field and controls the electrode of its optical characteristics, overlap in the plane with above-mentioned electro-optical substance, the resin bed that the concave-convex surface shape is arranged, manufacture method with the electro-optical device in the reflection horizon that has the reflecting surface that has reflected above-mentioned concave-convex surface shape at above-mentioned concave-convex surface in shape, it is characterized in that, there is employing that the exposure process of mask graph to there being photosensitive resin to expose of transmittance section and light shielding part arranged as the operation that forms above-mentioned resin bed, the developing procedure of the above-mentioned resin that is exposed with development, in above-mentioned exposure process, by the above-mentioned transmittance section of setting aforementioned mask figure or the size of above-mentioned light shielding part, exposing clearance with aforementioned mask figure and above-mentioned interlaminar resin, the state exposure that distributes and be curved surface shape increase and decrease along this surface with the lip-deep exposure intensity of above-mentioned resin forms the above-mentioned resin bed of the above-mentioned concave-convex surface shape that has above-mentioned exposure intensity corresponding and distribute at above-mentioned developing procedure.

Among the present invention, preferably by constitute the above-mentioned transmittance section of a plurality of islands in aforementioned mask figure decentralized configuration, what make above-mentioned transmittance section becomes above-mentioned light shielding part on every side, forms the recess of corresponding above-mentioned transmittance section on the surface of above-mentioned resin bed.At this, preferably the exposure wavelength lambda with above-mentioned exposure process is located in the scope of 300～450nm, and the diameter D of above-mentioned transmittance section is located in the scope of about 9～12 μ m, and above-mentioned exposing clearance G is located in the scope of about 150～250 μ m.

Among the present invention, preferably by constitute the above-mentioned light shielding part of a plurality of islands in aforementioned mask figure decentralized configuration, what make above-mentioned light shielding part becomes above-mentioned transmittance section on every side, forms the protuberance of corresponding above-mentioned light shielding part on the surface of above-mentioned resin bed.At this, preferably the exposure wavelength lambda with above-mentioned exposure process is located in the scope of 300～450nm, and the diameter D of above-mentioned light shielding part is located in the scope of about 8～12 μ m, and above-mentioned exposing clearance G is located in the scope of about 60～100 μ m.

Among the present invention, the transmissive portions that preferably has a part of removing above-mentioned reflection horizon and form transmissive portions forms operation.At this, be preferably in above-mentioned transmissive portions form operation remove above-mentioned reflection horizon a part and under the part of above-mentioned resin bed.

As mentioned above, according to the present invention, when making substrate for electrooptic device, can be rapider and with the concaveconvex shape of low-cost manufacturing reflecting surface than existing.

Description of drawings

Fig. 1 is the specification figure (a)～(d) of manufacture method of the substrate for electrooptic device of embodiment of the present invention 1.

Fig. 2 is the specification figure (a)～(c) of the manufacture method of this substrate for electrooptic device.

Fig. 3 is the key diagram of the exposure process of comparative example (A) and comparative example (B) manufacture method that this substrate for electrooptic device is shown.

Fig. 4 is the key diagram of mask graph of unit area S of the exposure process of comparative example (A) and comparative example (B) manufacture method that this substrate for electrooptic device is shown.

Fig. 5 is the summary planimetric map of structure of mask graph integral body of exposure process of the manufacture method of this substrate for electrooptic device of expression.

Fig. 6 is the curve map of relation of the normal reflection rate (parallel lines reflectivity) of diameter D, the exposing clearance G of transmittance section of mask of exposure process of manufacture method of this substrate for electrooptic device of expression and the resin bed that forms.

Fig. 7 is the curve map of relation of the normal reflection rate (parallel lines reflectivity) of the thickness, exposing clearance G of photoresist of exposure process of manufacture method of this substrate for electrooptic device of expression and the resin bed that forms.

Fig. 8 is the key diagram of mask graph of the unit area S of the used mask of the manufacture method of substrate for electrooptic device of expression embodiment of the present invention 2.

Fig. 9 is embodiment 2 the overlapping mask when 1 exposure is shown and the key diagram of the mask during 2 exposures.

Figure 10 is that the scattered light intensity in reflection horizon of expression embodiment 1 and embodiment 2 is to the dependent curve map of scattering angle.

Figure 11 is the curve map (b) of relation of the normal reflection rate (parallel lines reflectivity) of thickness, the exposing clearance G of the curve map (a) of relation of normal reflection rate (parallel lines reflectivity) of diameter D, the exposing clearance G of transmittance section of mask of expression embodiment 2 and the resin bed that forms and photoresist and the resin bed that forms.

Figure 12 is the summary stereographic map of the outward appearance of the expression liquid crystal indicator that utilizes the embodiment 3 that the manufacture method of electro-optical device of the present invention forms.

Figure 13 is the summary partial cross section figure (a) that modal representation utilizes the cross section structure of the liquid crystal indicator that the manufacture method of this electro-optical device forms, and the summary partial plan (b) of representing the planar structure of this substrate for electrooptic device.

Figure 14 is the perspective cross-sectional slice of summary structure of the liquid crystal indicator of expression embodiment 4.

Figure 15 is the amplifier section sectional view of side's substrate of the liquid crystal indicator of embodiment 4.

Figure 16 is the specification figure (a)～(d) of manufacture method of the substrate for electrooptic device of comparative example.

Figure 17 is the specification figure (a)～(d) of manufacture method of the substrate for electrooptic device of this comparative example.

Embodiment

Below, specify the embodiment of the manufacture method of the manufacture method of reflection substrate of the present invention and electro-optical device with reference to the accompanying drawings.

(embodiment 1: reflection substrate)

At first as embodiment of the present invention 1, the manufacture method of the reflection substrate of substrate for electrooptic device is described with reference to figure 1 and Fig. 2.Fig. 1 is the specification figure (a)～(d) of embodiment of manufacture method of the reflection substrate of expression substrate for electrooptic device of the present invention, and Fig. 2 is the specification figure (a)～(c) of this manufacture method of expression.

In the present embodiment, shown in Fig. 1 (a), at first clean the substrate 111 that constitutes by transparent materials such as glass and plastics, on the surface of substrate 111, be configured to the photoresist 101 of acrylic acid resinoid as base material by coating etc.Then, shown in Fig. 1 (b), adopt mask 102 exposure photoresists 101.At this, mask 102 is to have formed the light shield layer 102B that is made of films such as Cr etc. on the surface of transparency carrier 102A such as glass.This mask 102 is shown in Fig. 4 (A), and random dispersion has disposed the transmittance section 102x that constitutes a plurality of islands in unit area S.Become the light shielding part that light shield layer 102B causes around the 102x of transmittance section.That is, this transmittance section 102x is made of the opening of above-mentioned light shield layer 102B.Be shaped as circle, ellipse, Long Circle, the polygon etc. of transmittance section 102x are not particularly limited, but particularly preferably circular and regular polygon (square, positive pentagon, regular hexagon, polygon-octagonal etc.).Because such shape does not have the deviation of particular orientation etc., so obtain uniform optical characteristics easily, also have because the processing of mask also transfiguration is easy.But, when needing the orientation dependence of scattering properties, also the shape of transmittance section 102x can be formed the shape that prolongs to prescribed direction.

In this exposure process, adopt ultrahigh pressure mercury lamp as light source.This light is mainly by 3 kinds of wavelength (the i line of 365nm, the h line of 405nm.The g line of 436nm) constitutes.In the present embodiment, since the highest as the light sensitivity distribution of photoresist 101 to the light sensitivity of the i line of wavelength 365nm, so in this exposure process, photoresist 101 is exposed by i line (wavelength 365nm) in fact.

Then, by utilizing the above-mentioned photoresist 101 of developing liquid developing of regulation, shown in Fig. 1 (c), between the zone of the zone of the transmittance section of corresponding aforementioned mask 102 102x and corresponding light shielding part, form concavo-convex step.Under the situation of the present embodiment, by the exposing clearance G between diameter D, photoresist 101 and the mask 102 of regulating above-mentioned transmittance section 102x, to distribute along the exposure intensity on the surface of photoresist 101, particularly corresponding transmittance section 102x and on every side near the exposure intensity of surf zone distribute and constitute level and smooth increase and decrease, expose with this state.Then, in this developing procedure, the resin of the amount of removing this exposure intensity from the surface of photoresist 101 corresponding and distributing.Like this, as shown in the figure, can obtain having the resin bed 119 of milder concave-convex surface shape 119a.The form of island recess of transmittance section 102x of corresponding island that this concave-convex surface shape 119a has had decentralized configuration.Be specifically described for after this point.

Then, on the surface of the resin bed 119 that as above constitutes, form metallic films such as aluminium, silver, silver alloy (APC alloy etc.), chromium, as reflection horizon 112.Reflection horizon 112 forms concave-convex surface shape 119a by the surface at the resin bed 119 that becomes its basal surface, and the reflecting surface with the concaveconvex shape that has reflected this concave-convex surface shape 119a is arranged.Thereby, the form of island recess of corresponding above-mentioned concave-convex surface shape 119a that the reflecting surface in this reflection horizon 112 has had decentralized configuration.

Then, shown in Fig. 2 (a), on the surface in reflection horizon 112, form the mask 103 utilize common photoetching process to constitute by resist etc.Mask 103 is to be provided with out 103a in the zone that does not need reflection horizon 112.Then, carry out etching, shown in Fig. 2 (b), form reflection horizon 112 with peristome 112a by adopting this mask 103.Like this, form the reflection substrate 110 of Transflective.

In addition, in the above-mentioned etching work procedure, also can be by removing reflection horizon 112 and resin bed 119 simultaneously, shown in Fig. 2 (c), be formed on the reflection substrate 110 ' that the overlapped in the plane position of peristome 119b of the peristome 112a in reflection horizon 112 and resin bed 119 is provided with.In addition, also can be peristome 119b to be set in the formation stage of resin bed 119, form the reflection substrate 110 ' be provided with the peristome 112a of this peristome 119b reflecting layer superposed 112.Under the situation of this reflection substrate 110 ', because because of forming peristome 119b at resin bed 119, the transmitted light of peristome 112a by reflection horizon 112 is by resin bed 119, so can avoid the influence to transmitted light of scattering process that the concave-convex surface shape 119a small painted, resin bed 119 of resin bed 119 causes or refraction action.

(embodiment)

Fig. 3 (A) is the amplifier section sectional view of the relation of the photoresist 101 exposure process, on the substrate 111 of embodiment 1 of expression the present embodiment and mask 102.In addition, Fig. 4 (A) is the planimetric map of expression mask shape in this mask 102, unit area S, and Fig. 5 is the planimetric map of arrangement form of constituent parts region S that overlaps onto state representation substrate 111 integral body of substrate 111 with the graphics shape with the light shielding part 102B of mask 102.In the present embodiment, the thickness of photoresist 101 is made as 2.0 μ m, with the diameter D of the transmittance section 102x of mask 102 _ABe made as about 10 μ m, with the distance between the top and mask 102 of photoresist 101 following, i.e. exposing clearance (at interval) G _ABe set as about 180 μ m.At this, the exposure of exposure device is 80mJ/cm ², exposure wavelength lambda is 365nm (an i line).In addition, the transparent aperture rate in the unit area S of mask 102 is made as 30%, random arrangement transmittance section 102x.The equispaced P of transmittance section 102x shown in Fig. 4 (A) _ABe about 14 μ m.

In the present embodiment, by diameter D with the transmittance section 102x of mask 102 _AWith exposing clearance G _ABe set at above-mentioned value, can constitute the exposure intensity that is curved surface shape increase and decrease along the surface of photoresist 101 and distribute, then, by development photoresist 101, the level and smooth curved concave-convex surface shape that as shown in phantom in FIG., can form above-mentioned exposure intensity corresponding and distribute.If measure the normal reflection rate of the resin bed 119 that forms like this, then about 1.3～3.0%.At this, normal reflection rate (specular reflectance) is that (for example, wavelength X=650nm), utilization is arranged on the light sensors of the direction of emergence angle 40 degree and measures by the light with incident angle 40 degree incident visible light zones.In addition, if form reflection horizon 112 by aluminium on the surface of this resin bed 119, then normal reflection rate becomes about 8～20%.At this, the normal reflection rate when having formed smooth resin layer surface is about about 8.0%, and by utilizing above-mentioned concave-convex surface shape spread reflection reflection of light angle (that is, reflected light is scattered), normal reflection rate as described above descends.In addition, if on this smooth resin bed, form the reflection horizon that constitutes by aluminium, then can obtain about 95% normal reflection rate.In addition, in the present embodiment, be example as photoresist with the positive series of removing photographic department with developer solution, but be not developed the negative series plastics that liquid dissolves, also can handle equally for photographic department.The concavo-convex one-tenth of the transmittance section of at this moment, corresponding mask is opposite.

(comparative example)

Below, explanation should with the manufacture method of the comparative example of the foregoing description contrast.Figure 16 and Figure 17 are the specification figure of the manufacture method of comparative example.In the manufacture method of this comparative example, shown in Figure 16 (a), on substrate 111, applied after the photoresist 101 of thickness 1.6 μ m, shown in Figure 16 (b), utilized mask 104 to carry out the exposure of photoresist 101.At this, mask 104 is to have formed light shield layer 104B on transparency carrier 104A, and is same with aforementioned mask 102, random arrangement transmittance section 104x.These transmittance sections 104x is in configuration shown in Fig. 4 (B) in the unit area S.The diameter D of transmittance section 104x _BLittler than the foregoing description, be 7.5 μ m, but the aperture rate of the unit area S of mask 104 is identical with embodiment, is 30%, its result, the equispaced P of transmittance section 104x _BBecome about 11 μ m.

Fig. 3 (B) represents the situation of the exposure process of this comparative example, the flat shape of the mask 104 of the unit area S of Fig. 4 (B) expression comparative example.In this comparative example, for the photoresist 101 of thickness 1.6 μ m, as described above with the diameter D of transmittance section _BBe set at 7.5 μ m, with exposing clearance G _BBe set at 60 μ m and expose.At this, identical with shown in Fig. 3 (A) of exposure wavelength lambda and exposure intensity.At this moment, as dotting among Fig. 3 (B), as also illustrating among Figure 16 (c), the concave-convex surface shape steepen of the resin bed 129 that the back of developing forms, the normal reflection rate is about 1.0%.Because the concave-convex surface shape of this resin bed 129 is too precipitous, the normal reflection rate is low, so the light quantity that can be used for when in fact being used for liquid crystal indicator showing tails off, be difficult to obtain bright demonstration etc., can not form the reflecting surface of the display characteristic that satisfies liquid crystal indicator.

Therefore, shown in Figure 16 (d), the photoresist 130 of applied thickness 1.3 μ m again on resin bed 129, then, shown in Figure 17 (a), employing has the mask 105 of transparency carrier 105A and light shield layer 105B, is only exposed in the zone beyond the unit area S, does not expose and former state is developed for unit area S.Then,, shown in Figure 17 (b), utilize 2 layers of structure of resin bed 129 and resin bed 130, obtain the level and smooth concave-convex surface shape roughly the same with the foregoing description by carrying out the calcining of resin bed.

Then, shown in Figure 17 (c), on the surface of resin bed 130, formed reflection horizon 112 by aluminium etc.In addition, on it, form and have the resist 106 of peristome 106a and carry out etching, shown in Figure 17 (d),, obtain the substrate for electrooptic device of Transflective by 112 peristome 112a being set in the reflection horizon.

In this comparative example, though finally can form the reflecting surface that has with the roughly the same concaveconvex shape of embodiment, but if do not utilize the exposure imaging operation on the resin bed 129 that once forms, to form resin bed 130 again, then can not constitute reflecting surface with desirable reflection characteristic, so having the number of manufacturing increases, manufacturing time prolongs, and the problem of manufacturing cost increase.

(conditions of exposure)

Below, the relation of the optical characteristics of condition of exposure process of embodiment of the present invention and the resin bed that forms by developing after this exposure is described with reference to figure 6 and Fig. 7.Fig. 6 is the curve map of the relation of the diameter D of transmittance section of mask graph of normal reflection rate, exposure process of expression resin bed 119 and exposing clearance G.At this, the diameter D of transmittance section is made as 7.5 μ m, 10.0 μ m, 12.0 μ m, at the range exposing clearance of 100～250 μ m, measured the normal reflection rate.In addition, the aperture rate of mask (the aperture area ratio of unit area S) is made as 30% under all occasions.In addition, the thickness of photoresist is made as 1.7 μ m under all occasions.

Diameter D hour (diameter D=7.5 μ m) in the transmittance section of mask, in the little scope of exposing clearance G, normal reflection rate step-down, but if increase exposing clearance G, then normal reflection rate increases rapidly.That is, if diameter D is little, it is big that the amplitude of variation of the normal reflection rate when then having changed exposing clearance G becomes.

On the other hand, if diameter D becomes big (occasions of diameter D=10 μ m, 12 μ m), even then change exposing clearance G, the variation of normal reflection rate is also few, particularly makes exposing clearance G hour, and the reduction of normal reflection rate is obvious unlike diameter D hour.

As mentioned above, the rate of change of normal reflection rate becomes big when diminishing owing to the diameter D because of the transmittance section, be difficult to obtain the desirable reflectivity that repeatability is good or precision is high, thus think that diameter D is not about 7.5 μ m, but the value on it, more than for example best 9 μ m.In addition, big if diameter D further becomes, then as shown in Figure 6 because the amplitude of fluctuation of normal reflection rate diminishes, so the setting range of normal reflection rate diminish, thereby think below the best 12 μ m of diameter D.

As shown in Figure 6, in the little zone of exposing clearance G, the increase of exposing clearance G relatively, the increase ratio of normal reflection rate is little, or opposite, and the normal reflection rate reduces when the increase of exposing clearance G.Think that this is that the concave-convex surface shape is precipitous more because make exposing clearance G more little, thereby flat increases on the contrary, its normal reflection as a result increases.Thereby,, and the normal reflection rate (for example is adjusted in specialized range as can be known for dazzling of preventing that illumination light from causing with background is appeared before one's eyes, under the situation of present embodiment, 1.3 about～3.0%, the normal reflection rate about 8～20% in reflection horizon) in, exposing clearance G is more preferably greater than 150 μ m.

That is, less than 150 μ m, then its normal reflection rate is lower than the normal reflection rate scope (above-mentioned about 1.3～3.0%) of appropriateness as if exposing clearance G, and showing can deepening.In addition, though this normal reflection rate in above-mentioned scope, this is not because the concave-convex surface shape becomes gently, but because become the concaveconvex shape of the mixed existence of flat and precipitous part, its result, scattered light is few, shows darker.

But as shown in Figure 6, in the big zone of exposing clearance G, along with the increase of exposing clearance G, the normal reflection rate is dull to be increased.Think that this is that the concave-convex surface shape is mild more because exposing clearance G is big more, the concave-convex surface shape is mild more, and normal reflection light increases more gradually.Think in this zone, by the normal reflection rate is adjusted in the suitable scope, can obtain suitable concave-convex surface shape as the reflecting surface of liquid crystal indicator.

But, even the big zone of above-mentioned exposing clearance when the normal reflection rate is excessive, show to brighten, but become big, so visual decline because dazzling of causing of above-mentioned illumination light and background are appeared before one's eyes.Thereby, as mentioned above,,, preferably exposing clearance G is set in the scope below the 250 μ m in order to obtain the normal reflection rate of appropriateness in the diameter D of transmittance section scope at 9～12 μ m.

Fig. 7 is the curve map of relation of normal reflection rate of thickness, exposing clearance G and the resin bed of the photoresist of expression when the diameter D of transmittance section is set at 10 μ m.At this, the thickness of photoresist is set at 1.5 μ m, 1.7 μ m, 1.9 μ m, change exposing clearance G at 100～250 mu m ranges, and measured the normal reflection rate.In addition, the aperture rate of mask (the aperture area ratio of unit area S) is set at 30% under all occasions.

In this curve map, even the thickness that changes photoresist in above-mentioned scope is arranged, the variation tendency that aligns the relative exposing clearance G variation of reflectivity is constant basically, and the thickness of photoresist is thin more, the tendency that the normal reflection rate increases as a whole more.Think that this is when resin bed is thin, expose basal surface in the bottom of the recess that forms by exposure, thereby increase normal reflection.For arbitrary thickness, surpass 150 μ m from exposing clearance G, the normal reflection rate is dull to be increased.On the other hand, in the zone of exposing clearance G less than 150 μ m, if exposing clearance G is diminished, then normal reflection rate is opposite slowly to be increased.This exposing clearance is less than the zone of 150 μ m such as above-mentioned, and along with exposing clearance is diminished, the concave-convex surface shape becomes precipitous, and flat site increases, so normal reflection rate as a whole increases, scattered light is few, shows darker.

As above-mentioned result of study,, be used for the diameter D of transmittance section of the mask of exposure process as can be known as the present embodiment _ABe preferably in the scope of about 9～12 μ m exposing clearance G _AIn the scope of about 150～250 μ m.If in these scopes, then can suppress the twinkling and background of illumination light and appear before one's eyes, can guarantee display brightness simultaneously.That is, the reflecting surface as liquid crystal indicator can obtain suitable concave-convex surface shape.Particularly, for better concave-convex surface shape being set, best diameter D _AIn the scope of 9.5～11 μ m, exposing clearance G _AScope at 160～220 μ m.

The diameter of the transmittance section of the mask of above-mentioned embodiment and the scope of exposing clearance with the exposure wavelength lambda of exposure process (=365nm) be that prerequisite obtains.But, adopt be commonly referred to as the ultraviolet range, wavelength X is that light in the scope of 300～450nm also can obtain and above-mentioned roughly the same result.That is, because the diameter D of the transmittance section of above-mentioned embodiment _AScope (9～12 μ m) be exposure wavelength lambda (=365nm) about 25～33 times, so when the wavelength coverage of above-mentioned 300～450nm, even exposure wavelength changes, its diffracting effect is also almost constant, in addition because the exposing clearance G of the foregoing description _AScope (150～250 μ m) be about 400～700 times of exposure wavelength lambda, so when the wavelength coverage of above-mentioned 300～450nm, even exposure wavelength changes, the divergence of its diffraction light is also almost constant.

In addition, the aperture rate of mask is preferably in about 20～40% usually.If the aperture rate less than 20%, then because the interval of island transmittance section becomes big, so the area of the par of resin layer surface increases, forms the many reflectings surface of normal reflection.In addition, if the aperture rate surpasses 40%, then since the interval of the island transmittance section of adjacency diminish, so between the recess that resin layer surface forms, connect easily, its result, the par area still increases, and forms the many reflectings surface of normal reflection.

In addition, exposure is under these conditions preferably about 70～90mJ.This exposure is the maximum exposure amount of being determined by the size of transmittance section and exposing clearance (exposure of the center of transmittance section), preferably is adjusted into the incomplete removed degree of photoresist (residual-film amount is about 5～20%).This is that the reflecting surface that forms on this basal surface that exposes partly becomes smooth because if photoresist is all removed by above-mentioned maximum exposure amount, basal surface is exposed in the bottom of the recess that then forms on resin bed, thereby generates normal reflection.

(embodiment 2: reflection substrate)

Below, with reference to figure 8～Figure 11 embodiment of the present invention 2 are described.In the above-mentioned embodiment 1, in aforementioned mask 102 decentralized configuration constitute the transmittance section 102x of a plurality of islands, but the mask 106 that is used for the present embodiment is as shown in Figure 8, decentralized configuration constitute the light shielding part 106x of a plurality of islands.In addition, light shielding part 106x around become the transmittance section.This light shielding part 106x can by with the surface of the same translucent material of above-mentioned embodiment 1 on the light shield layer that forms constitute.At unit area S, light shielding part 106x is at random and with the distribution density decentralized configuration of approximate equality.

In this mask 106, with the diameter D of light shielding part 106x _CBe set at 9 μ m or 10 μ m, establish the equispaced P of light shielding part 106x _C=about 14 μ m.At this, the aperture rate is about 70%, thereby shading rate is about 30%.In addition, the photoresist identical with embodiment 1 formed thickness 2 μ m, adopt aforementioned mask 106, expose with exposing clearance G=70 μ m, exposure 30～40mJ.In this embodiment, because the aperture rate of mask 106 is about 2～2.5 times of embodiment 1, so the surface portion at the resin bed of corresponding light shielding part 106x forms the protuberance with sufficient scattering property, and, in order to make the concave-convex surface shape that forms by this protuberance become fully level and smooth shape, exposing clearance is set at about 40～50% of embodiment 1, in addition, exposure also is set at about 40～50% of embodiment 1.In addition, other condition is made as all identical, has formed resin bed with concave-convex surface shape with embodiment 1.

In the present embodiment,, so as shown in Figure 9, after at first having carried out exposure, then, carry out 2 exposures with bigger exposure with the 2nd mask 108 with mask 106 owing to tail off as above-mentioned exposure.The 2nd mask 108 that is used for these 2 times exposures constitutes part as the unit area S of above-mentioned formation concave-convex surface shape by the complete shading of light shield layer 108x, other parts, and promptly the part beyond the unit area sees through light.Thereby the exposure status in the unit area S can not be subjected to the influence of 2 exposures, and the resin bed of part that only departs from unit area S is by than heavy exposure.Then,, in unit area S, form the corresponding concave-convex surface shape of utilizing the exposure status of aforementioned mask 106 by carrying out development treatment, the part beyond unit area S, resin bed is almost removed fully.Carried out exposure-processed in this embodiment 2 times, but it is same to be used to form the exposure-processed and the embodiment 1 of concave-convex surface shape of resin bed, has only 1 time.

The form of island protuberance of light shielding part 106x of corresponding aforementioned mask 106 that the concave-convex surface shape of utilizing the present embodiment to form has become decentralized configuration.That is, utilize with decentralized configuration the concave-convex surface shape of embodiment 1 formation of island recess to compare, roughly become concavo-convex mutually opposite form.Therefore, the scattering properties at reflecting surface that forms on the resin bed of embodiment 1 and the reflecting surface that forms on the resin bed of this embodiment 2 creates a difference.

Figure 10 is that expression is measured respectively the reflecting surface of embodiment 1 and embodiment 2, scattered light intensity is to the dependent curve map of scattering angle.A among the figure is data of utilizing the reflecting surface of embodiment 1 formation, and B is data of utilizing the reflecting surface of embodiment 2 formation.For the reflecting surface in embodiment 1, along with scattering angle becomes big, scattered light intensity descends bigger, and at the reflecting surface of embodiment 2, the scattering angle dependence of scattered light intensity is little, and big even scattering angle becomes, the reduction of scattered light intensity is also little.Thereby, can watch bright the demonstration in wider angular field of view.

By the basic manufacture method of the present embodiment, shown in Figure 11 (a), to the different-diameter D of light shielding part 106x _C(7.5 μ m, 9 μ m, 10 μ m) have investigated respectively the normal reflection rate of the resin bed dependence to exposing clearance G.At this, the initial thickness of resin bed is made as 2.0 μ m altogether, make the aperture rate of mask become about altogether 70%.Its result, the diameter D of discovery light shielding part 106x _CMore little, the normal reflection rate is more little to the dependence of exposing clearance, the diameter D of light shielding part 106x _CBig more, the variable quantity when having changed exposing clearance is big more.Thereby, as the diameter D of light shielding part 106x _C, be preferably in the scope of about 8.0～12 μ m.Rate is because diameter D _CBe difficult to form protuberance during less than 8 μ m, so be difficult to utilize exposing clearance to adjust the normal reflection rate.Thereby, be difficult to adjust the reflection characteristic in reflection horizon.On the contrary, because diameter D _CCentral authorities at protuberance during greater than 12 μ m form the par easily, and it is big that the change of the normal reflection rate that the variation of exposing clearance causes becomes, so be difficult to realize the reflection characteristic precision and the repeatability in reflection horizon.

In addition, obtain following result, that is, and with the diameter D of light shielding part 106x _CIrrelevant, be scope more than the 70 μ m at exposing clearance G, the increase of the corresponding exposing clearance of normal reflection rate and dull the increase, but in the scope of exposing clearance less than 70 μ m, if reduce exposing clearance, then normal reflection rate increases.Think that this is because same with embodiment 1, when exposing clearance arrives to a certain degree greatly, passes through optical diffraction phenomenon, exposing clearance is big more, the concave-convex surface shape of resin bed is mild more, so the normal reflection rate increases, but reduces when too small at exposing clearance, owing to be difficult to produce diffraction of light, so be difficult to obtain level and smooth concaveconvex shape, exposing clearance is more little, flat and precipitous part increase, become both and mix the state of existence, the normal reflection rate rises.

In the present embodiment, basically because in the normal reflection rate zone littler than embodiment 1, the zone big in scattering angle also can obtain bigger scattered light intensity, so also can obtain good display characteristic in the low zone of normal reflection rate.Thereby, from above-mentioned data, as the exposing clearance G scope of 60～100 μ m preferably.If be lower than this scope, then since as described above the ratio of the par in the concave-convex surface shape and precipitous portion become greatly, so scattering angle diminishes, show darker.On the contrary, if greater than above-mentioned scope, then be difficult to form protuberance greatly because of the diffraction of light degree becomes, as a whole opposition face flatten smooth, so the bad phenomenon that normal reflection light causes increases.

Figure 11 (b) is the dependent curve map of the normal reflection rate of expression when the initial thickness of resin bed changed into 1.4 μ m, 1.7 μ m, 2.0 μ m to exposing clearance.At this, with the diameter D of the light shielding part 106x of mask _CBe made as 10 μ m, the aperture rate is made as altogether 70%.Even the variation in thickness of resin bed, the normal reflection rate is also almost constant to the dependence of exposing clearance, but if the initial thickness of resin bed is thin more, then normal reflection rate rises as a whole.Think that this is because when resin bed is thin, the part beyond the protuberance that utilizes exposure to form, basal surface exposes, thereby increases normal reflection.In addition, under the situation of the present embodiment, because the aperture rate of mask is big, so if resin bed is thin, then when developing etc., resin bed is stripped from easily.Therefore, under the situation of the present embodiment, promptly, mask is constituted decentralized configuration island light shielding part, greater than 50% o'clock, the thickness of resin bed was under the situation of embodiment 1, promptly in its aperture rate, mask is formed decentralized configuration island transmittance section, can be compared to most its aperture rate less than formed slightly at 50% o'clock (for example about 0.3 μ m) thicker.

In addition, the aperture rate of mask usually preferably about 60～80%.Surpass at 80% o'clock in the aperture rate,,, form the many reflectings surface of normal reflection so the area of the par of resin layer surface increases because the interval of island light shielding part becomes big.In addition, in the aperture rate less than 60% o'clock because the interval of the island light shielding part of adjacency diminishes, thus between the protuberance that resin layer surface forms, connect easily, its result, the par area still increases, and forms the many reflectings surface of normal reflection.

In addition, exposure 30～40mJ preferably under these conditions.The maximum exposure amount (exposure in the centre position between light shielding part) that this exposure is preferably determined by the interval and the exposing clearance of light shielding part is adjusted into the incomplete removed degree of photoresist (residual-film amount is about 5～50%).When photoresist was removed fully by above-mentioned maximum exposure amount, by exposing basal surface on the bottom of the recess that forms on the resin bed, the reflecting surface that forms at this basal surface that exposes partly became smooth, produces normal reflection.

(embodiment 3: electro-optical device)

Below, be structure and the manufacture method thereof that the electro-optical device of the reflection substrate that the manufacture method of utilizing above-mentioned reflection substrate forms has been adopted in example explanation with liquid crystal indicator shown in Figure 12 200.

Figure 12 is the summary stereographic map that expression utilizes the outward appearance of the liquid crystal indicator 200 that the embodiment of the manufacture method of electro-optical device of the present invention forms, Figure 13 (a) is the mode summary sectional view of liquid crystal indicator 200, and Figure 13 (b) is the amplifier section planimetric map that constitutes the reflection substrate 210 of liquid crystal indicator 200.In addition, only illustrate in the drawings and have the so-called liquid crystal display part that reflects the passive matrix structure of half transmitting mode approximately, but in the actual liquid crystal indicator that constitutes,, lighting device such as not shown back of the body illuminator, headlamp and housing etc. are installed suitably as required for the diagram part.

As shown in figure 12, the 1st transparent substrate 211 that liquid crystal indicator 200 will be made of glass plate and synthetic resin board etc. through encapsulant 230 as the reflection substrate 210 of matrix and therewith the 2nd same substrate 221 of subtend stick together as the subtend substrate 220 of matrix, from inlet 230a after liquid crystal 232 has been injected in the inboard of encapsulant 230, end material 231 envelopes with envelope and end, constitute cellular construction.

On the inner face (with the surface of the 2nd substrate 221 subtends) of the 1st substrate 211,, on the inner face of the 2nd substrate 221, in kind form a plurality of ribbon transparency electrodes 222 arranged side by side by a plurality of ribbon transparency electrodes 216 arranged side by side of formation such as sputtering methods.In addition, above-mentioned transparency electrode 216 conductions are connected to wiring 218A, and above-mentioned transparency electrode 222 conductions are connected to wiring 228.Transparency electrode 216 and transparency electrode 222 are mutually orthogonal, and its intersection region constitutes a plurality of pixels of rectangular arrangement, and these pixels are arranged and constituted liquid crystal display area A.

The 1st substrate 211 has the substrate extension 210T that stretches out more laterally than the profile of the 2nd substrate 221, forms above-mentioned wiring 218A on this substrate extension 210T, constitutes wiring 218B that conducting portion up and down is connected with above-mentioned wiring 228 conductions and the input terminal portion 219 that is made of a plurality of wiring figures that independently form via the part of encapsulant 230.In addition, on substrate extension 210T, be connected the semiconducter IC 261 of the liquid crystal display drive circuit that is equipped with built-in etc. with these

wiring

218A, 218B and input terminal portion 219 conductions.In addition, in order to be connected, flexible circuit board 263 has been installed in the end of substrate extension 210T with above-mentioned input terminal portion 219 conductions.

In this liquid crystal indicator 200, as shown in figure 13, dispose polarizer (1/4 wavelength plate) 240 and polarization plates 241 in the outside of the 1st substrate 211, dispose polarizer (1/4 wavelength plate) 250 and polarization plates 251 in the outside of the 2nd substrate 221.

The concrete structure of＜reflection substrate 210 and subtend substrate 220 〉

Below, with reference to the Figure 13 (a) and (b) concrete structure of explanation reflection substrate 210 and subtend substrate 220.

In the reflection substrate 210, form transparent resin bed 219, in addition, on this resin bed 219, form reflection horizon 212, be provided with peristome 212a in above-mentioned each pixel on the surface of the 1st substrate 211.In this reflection horizon 212, the part beyond the peristome 212a is the catoptrical reflecting part 212b of essence.Under the situation of the present embodiment, form the reflection horizon 212 that has peristome 212a and reflecting part 212b by each pixel.In addition, also can be that reflection horizon 212 and liquid crystal display area A integral body is integrally formed, only peristome 212a is formed by each pixel.

Above-mentioned resin bed 219 and reflection horizon 212 are equivalent to resin bed 119 and the reflection horizon 112 by the manufacture method formation of above-mentioned reflection substrate, form by manufacture method same as described above.Thereby, omit the manufacture method that this part is described.In addition, the structure of reflection substrate 210 shown in Figure 13 is corresponding to above-mentioned reflection substrate 110 '.That is, not only 212 form peristome 212a, also peristome is set in the position overlapping of the resin bed 219 of its lower floor with peristome 212a in the reflection horizon.

On reflection horizon 212, form dyed layer 214, on it, form the sealer (overlayer) 215 that constitutes by transparent resin etc. again.Constitute color filter by this dyed layer 214 and sealer 215.

Dyed layer 214 is painted material such as dispersed color and dyestuff and present specified hue in transparent resin usually.As an example of the tone of dyed layer, have by 3 colour cells of R (red), G (green), B (indigo plant) as former colour system color filter and to close the color filter of formation, but be not limited thereto, can form by the various tones outside the complementary color system.Usually, utilize photoetching process to remove unwanted part by the painted resist that the photoresist that comprises painted materials such as pigment and dyestuff constitutes, form dyed layer with regulation color figure by coating on substrate surface.At this, when forming the dyed layer of a plurality of tones, repeat above-mentioned operation.

In addition, as the spread geometry of dyed layer, adopt band to arrange in the illustrated example shown in Figure 13 (b), but except this band is arranged, can also adopt various graphics shapes such as rounded projections arranged, inclination mosaic arrangement.In addition, around each dyed layer of above-mentioned RGB, can be formed for the photomask (black matrix or black mask) of shading inter-pixel areas as the part of dyed layer.

The transparency electrode 216 that on sealer 215, constitutes by ITO transparent conductive bodies such as (indium tin oxides) with formation such as sputtering methods.Transparency electrode 216 forms the band shape in the diagram above-below direction extension of Figure 13 (b), and a plurality of transparency electrodes 216 constitute ribbon mutually side by side.On transparency electrode 216, form the alignment films 217 that constitutes by polyimide resin etc.

In the present embodiment, shown in Figure 13 (b), the dyed layer 214 that constitutes color filter is integrally formed as in each pixel and overlaps in the plane, so that cover the peristome 212a in reflection horizon 212 fully, towards periphery simultaneously, be stretched on the reflecting part 212b around the peristome 212a from the zone that overlaps in the plane with peristome 212a.

In addition, dyed layer 214 is not in the whole formation of each pixel, overlaps with the part in reflection horizon 212 but only form.That is 212 zones (outer regions in the illustrated example) that have the zone that overlaps in the plane with dyed layer 214 (in the illustrated example, in the face of peristome 212a interior all regional) and do not overlap in the plane, with dyed layer 214 in the reflection horizon.

On the other hand, in above-mentioned liquid crystal indicator 200, with the subtend substrate 220 of above-mentioned reflection substrate 210 subtends, on the 2nd substrate 221 that constitutes by glass etc., form and above-mentioned same transparency electrode 222, on it, form by SiO ₂And TiO ₂Deng the hard coating 223 that constitutes.In addition, stacked and above-mentioned same alignment films 224 on it.

(embodiment 4: electro-optical device)

Below, have another electro-optical device with above-mentioned different structure with reference to Figure 14 and Figure 15 explanation.The electro-optical device of this embodiment is the liquid crystal indicator 300 with active array type of reflection substrate 310.This liquid crystal indicator 300 utilizes encapsulant 330 to stick together with reflection substrate 310 with the subtend substrate 320 of its subtend, encloses liquid crystal 332 between two substrates.

In the reflection substrate 310, as shown in figure 14, same with above-mentioned resin bed on the inner face of substrate 311, the pixel electrode 315 in formation double as reflection horizon forms alignment films 316 on it on the resin bed 312 with concave-convex surface shape.In addition, on the inner face of reflection substrate 310 with to sweep trace shown in dotted lines in Figure 15 313 and, the data line 314 in expression cross section intersects mutually or the direction of quadrature is extended among Figure 14 and Figure 15 form forms a plurality of respectively.

Lower floor at pixel electrode 315 constitutes TFT (thin film transistor (TFT)) 310T as shown in figure 15.In this TFT310T, formation has the semiconductor layer of channel region 310c, source region 310s and drain region 310d, channel region 310c is connected to the gate electrode 310g subtend configuration of above-mentioned sweep trace 313 through dielectric film and conduction, 310s conduction in source region is connected to above-mentioned data line 314, and 310d conduction in drain region is connected to pixel electrodes 315.In addition, TFT310T is not limited to have the schematic structure of reciprocal cross difference structure, also can have the structure that has disposed gate electrode on channel layer, in addition, also can adopt known LDD (low-doped leakage) structure.

As shown in figure 14, in the subtend substrate 320, on the inner face of substrate 321, form the counter electrode 322 that constitutes by transparent conductive bodies such as ITO, on it, constitute the color filter same form making that appropriate colouring layer 323 becomes the regulation ordered state, and on it, form alignment films 324 with embodiment 3.

Like this in the liquid crystal indicator 300 of Gou Chenging, in the pixel of being selected by sweep trace 313, the current potential that data line 314 is provided offers pixel electrode, to should pixel electrode 315 and counter electrode 322 between the electric field that forms, the state of orientation of liquid crystal 332 changes, and forms desirable image.But, as the liquid crystal indicator of active array type, be not limited to TFT is used as on-off element as above-mentioned, TFD (thin film diode) as on-off element, also can be suitable for the present invention equally.

In addition, above-mentioned electro-optical device of the present invention is not only the liquid crystal indicator of illustrated example, also can be suitable for the present invention in the various electro-optical devices of device (Field Emission Display and Surface-ConductionElectron-Emitter Display etc.) of el light emitting device, Organnic electroluminescent device, plasma device, electrophoresis showed apparatus, use electronic emission element.

Claims

1. the manufacture method of a substrate for electrooptic device, be have adopt mask graph that transmittance section and light shielding part are arranged to be configured on the substrate exposure process that photosensitive resin exposes is arranged, manufacture method that the developing procedure of the above-mentioned resin that is exposed of developing and the reflection horizon that forms the reflection horizon on above-mentioned resin form the reflection substrate of operation, it is characterized in that:

Decentralized configuration constitutes the above-mentioned transmittance section of a plurality of islands on the aforementioned mask figure, will be set to above-mentioned light shielding part around the above-mentioned transmittance section,

In above-mentioned exposure process; The state that is curved surface shape increase and decrease with the distribution of the exposure intensity on the above-mentioned resin surface along this surface exposes; By exposure wavelength lambda being located in the scope of 300～450nm; The diameter of the above-mentioned transmittance section of aforementioned mask figure is located in the scope of 9～12 μ m and sets the optical diffraction angle; Be located at the propagation of setting the diffraction light that depends on the aforementioned mask figure in the scope of 150～250 μ m by the exposing clearance with aforementioned mask figure and above-mentioned interlaminar resin

In above-mentioned developing procedure, by on above-mentioned resin bed, forming the recess of corresponding above-mentioned transmittance section, form resin bed with the concaveconvex shape that distributes corresponding to above-mentioned exposure intensity,

Form in the operation in above-mentioned reflection horizon, on above-mentioned resin bed, form reflection horizon with the reflecting surface that has reflected above-mentioned concaveconvex shape.

2. the manufacture method of substrate for electrooptic device as claimed in claim 1 is characterized in that:

The aperture rate of aforementioned mask figure is set in 20～40% the scope.

3. the manufacture method of substrate for electrooptic device as claimed in claim 1 is characterized in that:

The exposure of above-mentioned exposure process is set in the scope of 70～90mJ.

4. the manufacture method of a substrate for electrooptic device, be have adopt mask graph that transmittance section and light shielding part are arranged to be configured on the substrate exposure process that photosensitive resin exposes is arranged, manufacture method that the developing procedure of the above-mentioned resin that is exposed of developing and the reflection horizon that forms the reflection horizon on above-mentioned resin form the reflection substrate of operation, it is characterized in that:

Decentralized configuration constitutes the above-mentioned light shielding part of a plurality of islands on the aforementioned mask figure, will be set to above-mentioned transmittance section around the above-mentioned light shielding part,

In above-mentioned exposure process; The state that is curved surface shape increase and decrease with the distribution of the exposure intensity on the above-mentioned resin surface along this surface exposes; By exposure wavelength lambda being located in the scope of 300～450nm; The diameter of the above-mentioned light shielding part of aforementioned mask figure is located in the scope of 8～12 μ m and sets the optical diffraction angle; Be located at the propagation of setting the diffraction light that depends on the aforementioned mask figure in the scope of 60～100 μ m by the exposing clearance with aforementioned mask figure and above-mentioned interlaminar resin

In above-mentioned developing procedure, by on above-mentioned resin bed, forming the protuberance of corresponding above-mentioned light shielding part, form resin bed with the concaveconvex shape that distributes corresponding to above-mentioned exposure intensity,

5. the manufacture method of substrate for electrooptic device as claimed in claim 4 is characterized in that:

The aperture rate of aforementioned mask figure is located in about 60～80% the scope.

6. the manufacture method of substrate for electrooptic device as claimed in claim 4 is characterized in that:

The exposure of above-mentioned exposure process is set in the scope of 30～40mJ.

7. as the manufacture method of each described substrate for electrooptic device of claim 1-6, it is characterized in that:

After above-mentioned reflection horizon forms operation, has the transmissive portions formation operation that a part of removing above-mentioned reflection horizon forms transmissive portions.

8. the manufacture method of substrate for electrooptic device as claimed in claim 7 is characterized in that: form in the operation at above-mentioned transmissive portions, come along a part except that the above-mentioned resin bed under it with the part in above-mentioned reflection horizon.

9. the manufacture method of an electro-optical device, comprise electro-optical substance, overlap, have the resin bed of concaveconvex shape having with above-mentioned electro-optical substance plane earth, in the manufacture method of the electro-optical device in the reflection horizon that on above-mentioned resin bed, has the reflecting surface that has reflected above-mentioned concaveconvex shape, it is characterized in that:

As the operation that forms above-mentioned resin bed, have and adopt the mask graph that possesses transmittance section and light shielding part the exposure process that photosensitive resin exposes to be arranged and the developing procedure of the above-mentioned resin that is exposed of developing what dispose on the substrate,

In above-mentioned developing procedure, by on above-mentioned resin bed, forming the recess of corresponding above-mentioned transmittance section, form above-mentioned resin bed with the above-mentioned concaveconvex shape that distributes corresponding to above-mentioned exposure intensity,

Has the operation that on above-mentioned resin bed, forms above-mentioned reflection horizon.

10. the manufacture method of electro-optical device as claimed in claim 9 is characterized in that:

The aperture rate of aforementioned mask figure is set in 20～40% the scope.

11. the manufacture method of electro-optical device as claimed in claim 9 is characterized in that:

12. the manufacture method of an electro-optical device, comprise electro-optical substance, overlap, have the resin bed of concaveconvex shape having with above-mentioned electro-optical substance plane earth, in the manufacture method of the electro-optical device in the reflection horizon that on above-mentioned resin bed, has the reflecting surface that has reflected above-mentioned concaveconvex shape, it is characterized in that:

In above-mentioned developing procedure, by on above-mentioned resin bed, forming the protuberance of corresponding above-mentioned light shielding part, form resin bed with the above-mentioned concaveconvex shape that distributes corresponding to above-mentioned exposure intensity,

13. the manufacture method of electro-optical device as claimed in claim 12 is characterized in that:

The aperture rate of aforementioned mask figure is set in 60～80% the scope.

14. the manufacture method of electro-optical device as claimed in claim 12 is characterized in that:

15. the manufacture method as each described substrate for electrooptic device of claim 9-14 is characterized in that:

Has the transmissive portions formation operation that a part of removing above-mentioned reflection horizon forms transmissive portions.

16. the manufacture method of substrate for electrooptic device as claimed in claim 15 is characterized in that: form in the operation at above-mentioned transmissive portions, come along a part except that the above-mentioned resin bed under it with the part in above-mentioned reflection horizon.