CN1296296A - Novel process for preparing gallium nitride based LED - Google Patents
Novel process for preparing gallium nitride based LED Download PDFInfo
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- CN1296296A CN1296296A CN00129633A CN00129633A CN1296296A CN 1296296 A CN1296296 A CN 1296296A CN 00129633 A CN00129633 A CN 00129633A CN 00129633 A CN00129633 A CN 00129633A CN 1296296 A CN1296296 A CN 1296296A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000002360 preparation method Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000005538 encapsulation Methods 0.000 claims abstract description 12
- 238000003466 welding Methods 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 229940044658 gallium nitrate Drugs 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 abstract description 9
- 239000010980 sapphire Substances 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 150000004767 nitrides Chemical class 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 238000007598 dipping method Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
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Abstract
The present method of light emtting diode based on gallium nitride includes the following steps: growing light emitting material and transparent substrate: in addition to N-electrode, using all the area of front side as P-electrode; using back side as light-delivering surface, adopting flip-chip bonding method to make encapsulation. Said invented method not only reduces the requirements and limit in the course of preparation, raises the emergent power of illumination of active region of light-emitting diode, but also raises yield of light emitting diode. Said invention is applicable to preparation of semiconductor devices by using nitride material grown on the transparent insulating substrate material similar to sapphire, such as light emitting diode, laser and UV detector.
Description
The present invention relates to a kind of III-hi-nitride semiconductor material (AlInGaN) and make the method for semiconductor device based on gallium nitride, be applicable to the device of the nitride material manufacturing of in similar sapphire transparent insulating substrate material, growing, for example light-emitting diode of various wavelength, laser, ultraviolet light detector etc.
As everyone knows, light emitting diode (LED) mainly is to be substrate and transparent, the Al that insulate that grew up in recent years with the GaAs of conduction or InP
2O
3Be substrate.In other words, the backing material of LED can be divided into two big classes: a class is the conductivity type substrate, and another kind of is transparent, insulated type substrate.To the LED of this two major types substrate, existing preparation is technical to have nothing in common with each other.
Conductivity type substrate preparation LED adopts the method for upper and lower electrode usually.Its advantage is that preparation technology is simple, and weak point is that the light under the exiting surface electrode can not fully emit, and this can influence the light extraction efficiency of LED.For instance, consider the needs of pressure welding outer lead, need 100 μ m * 100 μ m (or 4 Mills * 4 Mills) electrodes sized usually.And be prepared by prior art, as shown in Figure 2: the area of P-luminous zone (6) is about (350 μ m * 350 μ m-140 μ m * 140 μ m), wherein considers N-zone at least 140 μ m * 140 μ m (comprising the size of N-electrode (9) itself and the spacing of two electrodes).And the area of P-electrode (8) will account for 9.72% of light-emitting area (6) area, and then this 9.72% the light of reason that absorbs owing to electrode can not be used effectively.
For non-conductive substrate,, adopt the method for etching usually, as shown in Figure 1 owing to can not adopt the method for upper and lower electrode.Promptly adopt lithographic method to expose N type layer (2), then P electrode (8) and N electrode (9) are done on the varying mesa on same direction surface, we are called positive light emitting structures with this two electrodes in the structure of same direction varying mesa, and it along the profile of A-A direction as shown in Figure 2.For GaN-based LED, promptly on Sapphire Substrate (1), the N-GaN that grows successively is as N-ohmic contact layer (2), N-AlGaN (3), InGaN active area (4), P-AlGaN (5) and P-GaN ohmic contact layer (6).No matter be the LED of blue light or green glow or other wavelength because high P-type carrier concentration generally is difficult to obtain, so the P-profile adopts the method that increases transparency electrode (7) more, with thin metal layer or ITO as transparency electrode.Typical technology such as Toshiba's patent [1164934]--blue light emitting device and manufacture method thereof, patent [1102507] with Nichia Chemical Industries, Ltd--the GaN with Ohmic electrode is III-V compound semiconductor device and manufacture method thereof, these methods have improved luminous efficiency by the uniformity that increases current density, and its cost has been lost light extraction efficiency exactly.Can not outgoing except the light under the electrode, the light emission rate of transparency electrode is usually 20%-40% (patent of Nichia Chemical Industries, Ltd [1102507]--the GaN with Ohmic electrode is III-V compound semiconductor device and manufacture method thereof), greatly reduced the light extraction efficiency of LED, and its preparation process complexity, difficulty increase, the equipment precision requirement height, strengthen the cost of product, reduced rate of finished products.
The object of the present invention is to provide a kind of preparation method that needn't adopt the LED of transparency electrode fully, reduce the requirement and the restriction of preparation process, improve the rate of finished products of product; Improve the external quantum efficiency of LED simultaneously, improve the luminous exitance of active area; Another purpose is to improve the productive rate of LED, promptly prepares the LED crystal grain of greater number on the wafer of same size, thereby reaches further the purpose that reduces cost, increases output.
Content of the present invention and technical scheme are as follows.
The present invention has designed the new method of a kind of preparation based on the gallium nitride light emitting diode.All as the P-electrode, the opposite back side is as exiting surface with the entire area of front except that the N-electrode of prepared light emitting diode for this method, and adopts the upside-down mounting welding method to encapsulate.
Consider with Al
2O
3For the GaN-based LED of substrate has following main feature: Al
2O
3The wide 10eV that is about of substrate band gap, transparent wave-length coverage from 145.0nm to 5.5 μ m, particularly at 400nm-600nm spectral regions light transmittance as shown in Figure 3 for the Sapphire Substrate of twin polishing, its light transmittance is all more than 80% as can be seen, wherein 20% the loss reflection and the scattering that mainly come from the surface causes, and for the substrate of light that is sent by active area and twin polishing, these two losses can reduce, and in other words its light transmittance can also increase.Usually we claim that the face of growing GaN base LED on the Sapphire Substrate is positive, and rightabout face is referred to as the back side.According to above characteristics, the present invention proposes the back side as exiting surface, positive except that the N-electrode all as the P-electrode, and with the P-electrode as optical reflection film, the reflection light to this electrode propagation that active area sent makes reverberation pass through active area once more, and is gone out to shoot out by the back side.
Wherein the P-electrode as reflectance coating can be made of the multiple layer metal material, and will satisfy the requirement that the requirement that increases anti-film contacts with good ohmic.At this moment the reflectivity of light (400nm-500nm) at the metal electrode interface that send of active area can reach more than the 49.66%-58.10%, as shown in Figure 4.This light of propagating to the metal electrode direction that just means that active area sends is reflected more than 50%, and passes through active area once more, is gone out to shoot out by the back side.
Experimental result shows that GaN-based LED can make the chip of very small dimensions structure, and A1
2O
3(rupture modulus is 50000psi to have very high hardness (MOHS is 9) and mechanical strength; Rigidity modulus is 21 * 10
6Therefore psi), under very thin situation, can make very small size and not broken, but its encapsulation problem solves never.Therefore the LED minimum dimension that can reach depends on the preparation and the packaging technology technology of electrode, uses 4 Mills * 4 Mills welding electrode of (being about 100 μ m * 100 μ m) usually, and causes the obstacle that further reduces the led chip size thus.For this reason, at two electrodes proposed by the invention down, the encapsulation problem of back side light emitting structures, the corresponding flip chip bonding connection technology that adopted of the present invention, this method can be reduced to the size of led chip the scope of electrode size.Consider of the influence of luminous zone size to LED brightness, under the constant situation of the light-emitting area of the led chip that keeps prior art for preparing, because the P-electrode has no longer taken the luminous zone, the LED area can reduce the area of the electrode of P-shown in Fig. 1 (8) at least, thereby the original relatively area in luminous zone has reduced 9.72%.
The Figure of description explanation
Fig. 1. the plane graph of the prior art constructions of the nitride semiconductor LED on the Sapphire Substrate.
Fig. 2. the profile of the prior art constructions of the nitride semiconductor LED on the Sapphire Substrate.
Fig. 3. the transmission spectrum of the Sapphire Substrate of twin polishing.
Fig. 4. at the Al of twin polishing
2O
3On the substrate evaporation reflectance spectrum behind the Ni/Au metal film.
Fig. 5. with Al
2O
3Structure chart for the back side bright dipping of the GaN-based LED of substrate.
Fig. 6. have the installation diagram of structure of back side bright dipping of the GaN-based LED of two auxiliary external electrode methods.
Fig. 7. have the installation diagram of structure of back side bright dipping of the GaN-based LED of single auxiliary external electrode method.
Fig. 8. have the back side light extracting LED support and the direct upside-down mounting welding of the led chip schematic diagram of face-down bonding structure.
Further specify below in conjunction with embodiment.
With Al
2O
3For the GaN-based LED of substrate is prepared into the structure of back side bright dipping, as shown in Figure 5.Whole fronts are made two electrodes, the P-utmost point (12) and (13) and the N-utmost point (9).The back side can all become output optical zone, and the light that sends when active area is through the metal film reflex time, and reverberation can cause optical excitation through active area by secondary, thereby reaches the purpose of further enhancing luminous efficiency.P-electrode (13) mainly is made of High Purity Gold, as the part of ohmic contact.P-electrode (12) mainly is the highly reflecting films of the light of propagating to this electrode that sent as the part of ohmic contact and relative active area, and its thickness should be (2n+1) n
12λ, wherein n is a positive integer, n
12The highly reflecting films of the light of propagating for the P-electrode, its thickness should be (2n+1) n
12λ, wherein n is a positive integer, n
12Be the refractive index of P-contact layer (12) material under the λ of the optical wavelength that active area sends.The selection of P-electrode (12) material should be taken into account the double requirements of the requirement of P-ohmic contact and high reflectance, low absorption index.
Owing to adopt back side light extracting LED structure Design, the encapsulation technology of existing LED is all inapplicable, and the present invention is corresponding to have proposed new LED encapsulation technology.How to solve two electrodes down, the encapsulation problem of back side bright dipping, we are described in detail with following several embodiment.
First embodiment provides a kind of method of carrying out the upside-down mounting welding by two auxiliary external electrodes: at first, prepare P-electrode (12) and (13) and N-electricity (9) utmost point of LED by above-mentioned requirements.For example, P-electrode (12) can adopt metal Ni, and thickness is (n
12λ); P-electrode (13) can adopt metal A u, and thickness is 100-400nm.N-electrode (9) adopts Ti/Au as Ohm contact electrode, and typical thickness is respectively 10nm and 100nm-400nm.The employing another one has the auxiliary electrode thin slice (15) in conjunction with firm metal electrode (16) and (17), as shown in Figure 6.This thin slice (15) requires to have (a) good insulating, and (b) high temperature resistant (more than 300 ℃) (c) have certain mechanical strength (thickness is that 0.2mm-0.4mm is good), (d) easy-formation processing, the performance of (e) easily cutting apart.For example adopt polyimide film as auxiliary electrode thin slice (15), High Purity Gold is as electrode (16) and (17).Specifically scheme as shown in Figure 6: at first exposed portions serve and the auxiliary electrode (16) of led chip P-electrode (13) through insulation blocking aligned; led chip N-electrode (9) aligns through exposed portions serve and the auxiliary electrode (17) after the insulation blocking; and the P-electrode of LED and the external series gap of N-electrode (carrying out insulation blocking by insulating material) align with the gap of auxiliary electrode; LED flip chip bonding or conducting resinl are cohered on the auxiliary electrical pole piece; again auxiliary electrode is connected with led support with (19) by contact conductor (18), finishes encapsulation.
Second embodiment provides a kind of method of carrying out the upside-down mounting welding by single auxiliary electrode: the electrode preparation of LED is with first embodiment; The auxiliary electrical pole plate is identical with first scheme, but on the auxiliary electrical pole plate (15), the corresponding position of P region electrode is a circular hole, as shown in Figure 7.When led chip and auxiliary electrical pole plate link together; P-electrode (13) is relative with the circular hole of auxiliary electrical pole plate (15) through the exposed portions serve of insulation blocking, and N-electrode (9) coheres through the relative upside-down mounting welding with auxiliary electrode (17) of exposed portions serve or the conducting resinl of insulation blocking.With auxiliary electrode and led chip and led support encapsulation the time, then can be similar to the method for the led chip of upper/lower electrode, be connected with the P-electrode by circular hole with conducting resinl, the N-electrode is gone between by spun gold and 19 is connected with support arm.According to said method Zhi Bei LED has the result identical with embodiment 1.
The 3rd embodiment provides a kind of method of carrying out the upside-down mounting welding by led support: led support is made the structure with flip chip bonding relative with the LED electrode, with the direct upside-down mounting welding of led chip, as shown in Figure 8.This embodiment has the identical result with embodiment 1 and embodiment 2, just will satisfy the requirement relative with the led chip electrode structure in the preparation of led support.
More than three kinds of embodiment be of the present invention for example, according to the principle of the invention, can also derive other various schemes.
The present invention has avoided the technical process of the complexity of preparation transparency electrode.And, light extraction efficiency is greatly improved owing to adopt the structure of back side bright dipping.The preparation of considering the P-electrode makes it become highly reflecting films, and catoptrical secondary excitation, and light emission rate can be greatly improved.It has substantial economics, and reason is:
1. compare with two kinds of method for packing of tradition, solved the light outgoing problem under the P-electrode,, therefore improve light emission rate 9.72% because the P-electrode area accounts for 9.72% of P-district lighting area.
2. solved the low problem of light transmittance of GaN-based LED transparency electrode.The result that the transparency electrode of prior art for preparing is best, light transmittance reaches 40%.And the light transmittance of Sapphire Substrate can reach more than 80%, improves light emission rate 40%.
Comprehensive above-mentioned 2 points improve light emission rate 49.72%.
3. keeping can reducing the shared chip size of P-electrode under the constant situation of original output optical zone area, the area of original relatively technology led chip reduces 8.16% at least, can make the utilance of material improve 8.16% at least.
Claims (12)
1, a kind of method for preparing gallium nitrate based light emitting diode is characterized in that: will be in the entire area of the front of the prepared diode of the light-emitting material of growing on the substrate except that the N-electrode all as the P-electrode, and the opposite back side is as exiting surface; Adopt the upside-down mounting welding method to encapsulate.
2, preparation according to claim 1 is based on the method for gallium nitride light emitting diode, it is characterized in that: with a P-electrode as optical reflection film, the reflection light to this electrode propagation that active area sent makes reverberation pass through active area once more, and is gone out to shoot out by the back side.
3, the P-electrode as optical reflection film according to claim 2, it is characterized in that: the thickness of this P-electrode layer is (2n+1) n
pλ, wherein n is a positive integer, n
pBe the refractive index of P-electrode layer material under the λ of the optical wavelength that active area sends.
4, the P-electrode as optical reflection film according to claim 2 is characterized in that: this P-electrode layer is selected for use and is met ohmic contact requirement and the high material that reflects, hangs down the absorption index double requirements.
5, the P-electrode as optical reflection film according to claim 4 is characterized in that: select the material of metal Ni as this electrode layer for use.
6, upside-down mounting welding method according to claim 1; it is characterized in that: adopt insulating material that the P-electrode and the N-electrode of light emitting diode are carried out insulation blocking; the exposed portions serve of two electrodes aligns with corresponding auxiliary electrode respectively; cohere on the auxiliary electrical pole piece the P-electrode of light emitting diode and N-electrode flip chip bonding or with conducting resinl, auxiliary electrode is connected with the light emitting diode support by contact conductor finishes encapsulation again.
7, upside-down mounting welding method according to claim 1 is characterized in that: carry out the upside-down mounting welding by two auxiliary electrodes.
8, upside-down mounting welding method according to claim 1 is characterized in that: carry out the upside-down mounting welding by single auxiliary electrode.
9, upside-down mounting welding method according to claim 1 is characterized in that: carry out the upside-down mounting welding by flip chip bonding light emitting diode support.
10, two auxiliary external electrode upside-down mounting welding method according to claim 7, it is characterized in that: adopt an auxiliary electrode thin slice that has two metal electrodes, and the external series gap of two auxiliary electrodes is corresponding with the external series gap of light emitting diode P-electrode and N-electrode; The P-electrode of insulation blocking and the exposed portions serve of N-electrode are aligned with two auxiliary electrodes respectively; cohere on the auxiliary electrical pole piece the P-electrode of light emitting diode and N-electrode flip chip bonding or with conducting resinl, auxiliary electrode is connected with the light emitting diode support by contact conductor finishes encapsulation again.
11, single auxiliary electrode upside-down mounting welding method according to claim 8 is characterized in that: adopt an auxiliary electrical pole plate; A metal auxiliary electrode is arranged on the auxiliary electrical pole plate, and it and light emitting diode chip an electrode of insulation blocking (as N-electrode or P-electrode) align; Also has a circular hole on the auxiliary electrical pole plate; on it and the light emitting diode chip another electrode of insulation blocking (as P-electrode or N-electrode) align: with light emitting diode chip and support encapsulation the time; with the circular hole of conducting resinl P-electrode (or N-electrode) is connected with support by auxiliary electrode; N-electrode (or P-electrode) and auxiliary electrode are carried out the upside-down mounting welding or cohere, be connected with support arm by lead-in wire then and finish encapsulation with conducting resinl.
12, flip chip bonding light emitting diode support method according to claim 9, it is characterized in that: the support of light emitting diode is made had the flip-chip bonded structure relative, utilize the support with light emitting diode chip form coupling directly to carry out the upside-down mounting welding with the light emitting diode electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001296337A CN1147937C (en) | 2000-09-29 | 2000-09-29 | Novel process for preparing gallium nitride based LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001296337A CN1147937C (en) | 2000-09-29 | 2000-09-29 | Novel process for preparing gallium nitride based LED |
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| Publication Number | Publication Date |
|---|---|
| CN1296296A true CN1296296A (en) | 2001-05-23 |
| CN1147937C CN1147937C (en) | 2004-04-28 |
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|---|---|---|---|
| CNB001296337A Expired - Fee Related CN1147937C (en) | 2000-09-29 | 2000-09-29 | Novel process for preparing gallium nitride based LED |
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|---|---|
| CN (1) | CN1147937C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100340008C (en) * | 2004-09-30 | 2007-09-26 | 中国科学院半导体研究所 | Method for making GaN-based LED with back hole structure |
| CN100353576C (en) * | 2004-11-19 | 2007-12-05 | 中国科学院半导体研究所 | Production of inverted gallium nitride base light emitting diode chip |
| CN100380697C (en) * | 2005-03-30 | 2008-04-09 | 三星电机株式会社 | Group III-nitride light emitting device |
| CN1667842B (en) * | 2004-03-11 | 2010-09-08 | 炬鑫科技股份有限公司 | Structure of gallium nitride family light-emitting diode and process for making same |
| CN101371372B (en) * | 2006-01-23 | 2012-05-23 | 昭和电工株式会社 | Light-emitting diode and method for fabrication thereof |
| CN102769077A (en) * | 2012-07-12 | 2012-11-07 | 江苏扬景光电有限公司 | Method for manufacturing flip-chip bonding light emitting diode (LED) |
| CN101681963B (en) * | 2007-06-01 | 2013-05-29 | 特洛伊科技有限公司 | Ultraviolet radiation light emitting diode device and fluid processing system |
| CN104633493A (en) * | 2013-11-14 | 2015-05-20 | 晶元光电股份有限公司 | light emitting device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006073619A (en) * | 2004-08-31 | 2006-03-16 | Sharp Corp | Nitride based compound semiconductor light emitting diode |
-
2000
- 2000-09-29 CN CNB001296337A patent/CN1147937C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1667842B (en) * | 2004-03-11 | 2010-09-08 | 炬鑫科技股份有限公司 | Structure of gallium nitride family light-emitting diode and process for making same |
| CN100340008C (en) * | 2004-09-30 | 2007-09-26 | 中国科学院半导体研究所 | Method for making GaN-based LED with back hole structure |
| CN100353576C (en) * | 2004-11-19 | 2007-12-05 | 中国科学院半导体研究所 | Production of inverted gallium nitride base light emitting diode chip |
| CN100380697C (en) * | 2005-03-30 | 2008-04-09 | 三星电机株式会社 | Group III-nitride light emitting device |
| CN101371372B (en) * | 2006-01-23 | 2012-05-23 | 昭和电工株式会社 | Light-emitting diode and method for fabrication thereof |
| CN101681963B (en) * | 2007-06-01 | 2013-05-29 | 特洛伊科技有限公司 | Ultraviolet radiation light emitting diode device and fluid processing system |
| CN102769077A (en) * | 2012-07-12 | 2012-11-07 | 江苏扬景光电有限公司 | Method for manufacturing flip-chip bonding light emitting diode (LED) |
| CN104633493A (en) * | 2013-11-14 | 2015-05-20 | 晶元光电股份有限公司 | light emitting device |
| CN104633493B (en) * | 2013-11-14 | 2018-05-25 | 晶元光电股份有限公司 | light emitting device |
| CN108533993A (en) * | 2013-11-14 | 2018-09-14 | 晶元光电股份有限公司 | light emitting device |
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| Publication number | Publication date |
|---|---|
| CN1147937C (en) | 2004-04-28 |
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Address after: No. 6 Boleda Pavilion Lake Avenue in Jiangsu Province Economic Development Zone Patentee after: Jiangsu Boleda Photoelectric Technology Co., Ltd. Address before: Beijing, Haidian District, Zhongguancun, Peking University Patentee before: Peking University |
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Addressee: Jiangsu Boleda Photoelectric Technology Co., Ltd. Document name: Notification to Pay the Fees |
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Addressee: Jiangsu Boleda Photoelectric Technology Co., Ltd. Document name: Notification of Termination of Patent Right |
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Granted publication date: 20040428 Termination date: 20160929 |