CN1296288A - System and method for checking outward appearance of semiconductor device - Google Patents
System and method for checking outward appearance of semiconductor device Download PDFInfo
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- CN1296288A CN1296288A CN 00134718 CN00134718A CN1296288A CN 1296288 A CN1296288 A CN 1296288A CN 00134718 CN00134718 CN 00134718 CN 00134718 A CN00134718 A CN 00134718A CN 1296288 A CN1296288 A CN 1296288A
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Abstract
Provided is a system and method for checking outward appearance of the target. The system includes a light struck apparatus, illuminating beam vertically from the upside of the semiconductor device; a tridimensional detection device, mounted on the upside of the semiconductor device for detecting the beam reflected from the semiconductor device; an image storage apparatus, storing the image shot by the detection device; a computing unit, computing the height of the presumptive area of the semiconductor device; an output device, outputting the stored image and the calculated result data; and a control device, controlling the corresponding device.
Description
The present invention relates to check the system and the method thereof of the outward appearance of semiconductor device, more particularly relate to check the system and the method thereof of the three-dimensional appearance of semiconductor device, this be by detect by the light of vertical irradiation on the target that will check with the height change of target beam reflected in various degree, and calculate by the gray scale that adopts the image that detects that the height of the presumptive area of target realizes.
At present, in fact semiconductor device is applied to nearly all electronic product and state-of-the-art equipment, comprises Medical Devices, communication satellite and various control system.Defective on the semiconductor device is one of the principal element that has a strong impact on the performance of various device.Therefore, in the defective of finding before the manufacturing equipment on the semiconductor device, this is very important in the process of making semiconductor device in batches.But it is very difficult only determining whether to exist on the semiconductor device defective by people's eyesight.From time and cost aspect, this also is inefficient.
In order to develop the check system of the defective on the two-dimensional surface that can automatically find semiconductor device, many researchs have been carried out.Existing several check systems are being used.What carry out at present is by setting up attachment device for the CCD camera, such as light irradiation device, laser beam device etc., and the system of the defective on the two-dimensional surface of exploitation inspection semiconductor device.
In the system of the outward appearance of checking semiconductor device by means of laser beam, a plurality of semiconductor device are placed on the carriage, the semiconductor device integral body that is placed on the carriage scans irradiation by laser beam, to check the outward appearance of semiconductor device by the laser beam of detection of reflected.
But according to the system that checks the outward appearance of semiconductor device by means of laser beam, in the laser beam flying irradiation process, the carriage that is made of plastics is decomposed by laser beam easily, produces steam thus.Plastics decompose the steam that produces and become semiconductor device surrounding environment and the factor of delay review time polluted.
In addition, the check system of using laser beam has reduced the precision of measuring image thus with constant interval illuminating laser beam.Moreover because the check system of using laser beam is with constant interval illuminating laser beam, the semiconductor device that is placed on the carriage should be positioned on the straight line.Therefore, use the check system of laser beam to have the another one problem: an additional device must be installed come semiconductor device on rocking bracket and the adjustment carriage.
Except using laser beam to check the system of outward appearance of semiconductor device, showed a kind of system that uses light irradiation device to check the outward appearance of semiconductor device in the United States Patent (USP) 5828449.
According to foregoing invention, a ring light irradiation unit comprises the light-emitting component under a plurality of being tilted to, and is arranged on the bottom of optical detection device, is used for light beam irradiates to making the as a whole semiconductor device that will check.When this ring light irradiation unit arrived light beam irradiates the soldered ball (solder ball) of semiconductor device or goes between upward, light beam did not shine the edge of soldered ball and the horizontal component of center and lead-in wire.Thus, be difficult to detect exactly the image of soldered ball.Can only be according to the detection image of soldered ball, determine whether soldered ball exists and measure two-dimension sizes and the shape that comprises diameter, circularity etc.
In addition, the ring light irradiation unit is from the side-irradiation light beam of semiconductor device, and the semiconductor device that therefore is placed on the outer wall side of carriage is blocked by the shade of carriage.In order to eliminate the shadow effect of carriage, check system will be placed on each semiconductor device on the carriage and shift to checkout gear and subsequently it is taken.Therefore, according to foregoing invention, making semiconductor device shift to checkout gear from carriage and they being got back to the process of original carriage, the damage of semiconductor device may take place, and exist the inspection semiconductor device to need the problem of more time.
Therefore, the objective of the invention is and to solve the above problems.An object of the present invention is to provide a kind of system and method thereof that is used to check the outward appearance of semiconductor device, it calculates the surface state and the height of the presumptive area of semiconductor device by the image that adopts the semiconductor device of taking, check the three-dimensional appearance of semiconductor device exactly.
In order to realize these purposes, be used to check that according to of the present invention the system of the outward appearance of semiconductor device comprises: light irradiation device is used for the upper vertical ground illumination beam from semiconductor device; Three-dimensional detection device, it is arranged on the upside of semiconductor device, is used for detecting from the semiconductor device beam reflected; Image storage device is used to store the image that is detected by checkout gear; Calculation element is used for the gray scale according to the image of being stored by image storage device, calculates the height of the presumptive area of semiconductor device; Output device is used for image that the output image storage device stores and the result data that is calculated by calculation element; And control device, be used to control related device.
Be used to check that according to of the present invention the method for the outward appearance of semiconductor device may further comprise the steps: light beam vertically is radiated at semiconductor device; Storage is by the image of the semiconductor device of checkout gear detection; Employing is calculated the height of the presumptive area of semiconductor device based on the gray scale of the image of the semiconductor device of storage; With output result of calculation.
Here, presumptive area is a plurality of soldered balls that are formed on the semiconductor device.Calculation procedure may further comprise the steps: adopt the gray scale based on the image of the semiconductor device of storing, the center of search respective solder ball; At gray scale and the diameter of on eight directions at the respective solder ball center of searching for, measuring soldered ball; Diameter and the gray scale of more measured respective solder ball on eight directions; Minimum diameter in eight diameters of selection respective solder ball; With according to the maximum gauge in the diameter of selecting respectively, calculate the relative altitude of a plurality of soldered balls that form on the semiconductor device.
After having read the following detailed description of being done in conjunction with the accompanying drawings, it is clearer that above-mentioned purpose of the present invention and further feature and advantage will become, in the accompanying drawing:
Fig. 1 is the schematic diagram of demonstration according to a preferred embodiment of the system of the outward appearance of inspection semiconductor device of the present invention;
Fig. 2 is the schematic diagram that shows the beam path on the soldered ball that shines the semiconductor device among Fig. 1;
Fig. 3 a schematic diagram that to be the gray scale that shows the image of being taken by three-dimension sensor change with the height change of soldered ball;
When Fig. 3 b is the soldered ball that shows when three-dimension sensor shooting differing heights, the schematic diagram that the gray scale of the image of shooting changes with the height change of soldered ball;
Fig. 4 a-4d is the outward appearance that shows soldered ball and the schematic diagram of corresponding image sensor;
Fig. 5 is the schematic diagram of demonstration according to another preferred embodiment of the system of the outward appearance of inspection semiconductor device of the present invention;
Fig. 6 a is the schematic diagram that shows the beam path on the soldered ball that shines the semiconductor device among Fig. 5;
Fig. 6 b is the schematic diagram that shows the beam path on the lead-in wire that shines the semiconductor device among Fig. 5;
Fig. 7 shows when having the lead-in wire of differing heights by the three-dimension sensor shooting schematic diagram that the gray scale of captured image changes with the height change that goes between;
Fig. 8 is a flow chart, is used to show the method according to the outward appearance of inspection semiconductor device of the present invention;
Fig. 9 is a flow chart, is used to show the method for calculating the height of soldered ball according to the gray scale of captured image;
Figure 10 shows the schematic diagram that is used to calculate the method for captured visual diameter according to of the present invention;
Figure 11 is a curve chart, and it demonstrates the diameter of captured image and the relation between the gray scale;
Figure 12 is the exemplary schematic diagram of the shooting image of the target that demonstrates on monitor.
Describe system and method below with reference to accompanying drawings in detail according to the outward appearance of inspection semiconductor device of the present invention.
Fig. 1 is the schematic diagram of demonstration according to a preferred embodiment of the system of the outward appearance of inspection semiconductor device of the present invention.
With reference to Fig. 1, a plurality of semiconductor subassemblies 30 that check are placed on the carriage 23, and carriage 23 is placed on the workbench 22.Here, semiconductor subassembly can be selected from following type: ball grid array pin (BGA) and microballoon grid array pin (μ BGA), grid array pin (PGA) or chip footage number encapsulation (CSP).The semiconductor subassembly of ball grid array pin and microballoon grid array pin will mainly be described below.
Be provided with light irradiation device at carriage 23 upsides, be used for light beam is vertically shone the semiconductor subassembly of installing on the carriage 23.Upside at light irradiation device is provided with checkout gear or three-dimension sensor 15, is used to detect semiconductor subassembly 30 beam reflected from the carriage.Here, for three-dimension sensor, can adopt three-dimensional CCD camera.
Light irradiation device comprises luminous component 13 and optical splitter 14.Luminous component 13 comprises a plurality of light-emitting components, light-emitting diode for example, and vertical arrangement is in line between semiconductor subassembly on the carriage 23 30 and three-dimension sensor 15 for they.Optical splitter 14 perpendicular to luminous component 13 and be arranged on semiconductor subassembly and three-dimension sensor 15 between a straight line on, the light beam vertical reflection that is used for coming from luminous component is provided with that side of semiconductor subassembly to the carriage.
On semiconductor subassembly 30, be formed with soldered ball 31.Project on the semiconductor subassembly 30 by optical splitter 14 from the luminous component emitted light beams, and from semiconductor subassembly 30 reflections.Because intercepted by three-dimension sensor 15 from the light beam of semiconductor subassembly 30 reflection backs by optical splitter 14, the image of semiconductor subassembly 30 is taken.Here, three-dimension sensor 15 is taken as an image cell with each semiconductor subassembly.
Subsequently, the image of being taken by three-dimension sensor 15 is stored in the memory 18 by microcomputer 11.A control computer 20 is connected to microcomputer 11 by interface arrangement 19, is used for by this checkout gear of whole user ground control.
According to the control of control computer 20,,, export a monitor 16 and/or a printer 17 to by interface arrangement 19 and control computer 20 by the data of microcomputer 11 calculating and the height of soldered ball.
A luminous component driver 12 driven for emitting lights parts 13 under the control of microcomputer 11.Three-dimension sensor 15, optical splitter 14 and luminous component 13 constitute a module.A shift servo device 21 moves this module under the control of microcomputer 11.
Operation principle according to the system of the outward appearance of the inspection semiconductor device of this preferred embodiment of the present invention will be described below.
At first, if under user's control, control signal exports this testing fixture to carry out three-dimensional shooting operation by control computer 20, and control signal is then by interface arrangement 19 input microcomputers 11.
When light beam irradiates was to semiconductor subassembly 30, the three-dimension sensor 15 that is controlled in " connection " state by microcomputer 11 received from semiconductor subassembly 30 beam reflected, and takes the image of semiconductor subassembly 30.The image of being taken by three-dimension sensor 15 is sent to microcomputer 11 with the picture frame form of predetermined bite.
Here, the module that comprises three-dimension sensor 15, optical splitter 14 and luminous component 13, under the control of microcomputer 11, be that the unit moves by shift servo device 21 with a semiconductor subassembly, and 15 pairs of semiconductor subassemblies 30 of three-dimension sensor are taken one by one.
Fig. 2 is the schematic diagram that shows the beam path on the soldered ball that shines the semiconductor device among Fig. 1.By optical splitter, light beam vertically projects on the soldered ball 31 of semiconductor subassembly 30, so just can not be subjected to the influence of the shade of carriage.Therefore, three-dimension sensor 15 can be taken the outward appearance image of semiconductor subassembly 30 exactly.
Fig. 3 a schematic diagram that to be the gray scale that shows the image of being taken by three-dimension sensor change with the height change of soldered ball.For the image of being taken by three-dimension sensor, the white portion at center has high gray-scale value, has a large amount of light beams to receive from the soldered ball reflection and by three-dimension sensor herein.What draw in the outside of soldered ball is dark color.Along with the convergence outside, center, there is less light beam to receive from the soldered ball reflection and by three-dimension sensor from soldered ball.For the image of being taken by three-dimension sensor 15, the outside has low gray-scale value.Here, image is made of pixel unit.If the grey scale table of each pixel is shown 8 bits, the pixel value corresponding with the center of soldered ball is near 255, and the pixel value of the image corresponding with the neighboring of soldered ball is near 0.
When Fig. 3 b is the soldered ball that shows when three-dimension sensor shooting differing heights, the schematic diagram that the gray scale of the image of shooting changes with the height change of soldered ball.When the higher soldered ball of three-dimension sensor 15 shooting heights, has bigger white portion at the center at the image shown in the left side of this figure, and when the lower soldered ball of three-dimension sensor 15 shooting heights, has less white portion at the center at the image shown in the right side of this figure.Therefore, for the soldered ball of differing heights, the image of being taken by three-dimension sensor has different gray scales.
As mentioned above, according to the amount of the light beam that receives from soldered ball reflection and by three-dimension sensor 15, the image of being taken by three-dimension sensor has different gray scales, and therefore, gray scale is different with the height change of soldered ball.
Fig. 4 a-4d is the outward appearance that shows soldered ball and the schematic diagram of corresponding image sensor.
Fig. 4 a is the schematic diagram of the soldered ball image (left side) that obtains when three-dimension sensor is taken normal soldered ball shown in this figure right side.The white portion at center is very well-balanced on the whole, and along with the outside near soldered ball presents darker color.
Fig. 4 b is the schematic diagram of the soldered ball image (left side) that obtains when three-dimension sensor is taken the soldered ball (right side) with interrupted core.The white portion at center is interrupted.
Fig. 4 c is the schematic diagram of the soldered ball image (left side) that obtains when three-dimension sensor is taken the soldered ball (right side) of distortion.The image sensor of soldered ball neighboring is out of shape.
Fig. 4 d is the schematic diagram that is used for the respective solder ball image that obtains when the comparison three-dimension sensor is taken normal soldered ball and damaged soldered ball.Damaged soldered ball does not have white portion in image, whole is dark-coloured.
Fig. 5 is the schematic diagram of demonstration according to another preferred embodiment of the system of the outward appearance of inspection semiconductor device of the present invention.Identify with identical reference number with assembly identical in first preferred embodiment of the present invention, and below will omit the explanation that these is had the assembly of same reference numbers.
Compare with the check system of first preferred embodiment, the check system of second preferred embodiment also comprises luminous component 24.Luminous component 24 comprises a plurality of light-emitting diodes, is used for predetermined angle the light beam oblique illumination at the semiconductor device that will check.Luminous component 24 is arranged on the optical splitter bottom obliquely with respect to the path of the light beam by optical splitter 14.Luminous component 24 is used to increase the amount of the light beam that is received by three-dimension sensor 15, and obtains the image more accurately of the semiconductor device that will check thus.Here, a plurality of luminous components 24 preferably form by the aduncate tertiary circulation shape of predetermined angular (inverted V-shaped).
According to second preferred embodiment, by luminous component 13 and optical splitter 14, light beam vertically is radiated on the semiconductor device, and simultaneously, by luminous component 24, light beam is lean-in tiltedly to be radiated on the semiconductor device.
Fig. 6 a and 6b demonstrate vertically and project obliquely the path of the light beam on soldered ball and the lead-in wire (lead) respectively.Compare with the system among Fig. 1, more light beam receives with the lead-in wire reflection and by three-dimension sensor 15 from soldered ball.
Fig. 7 shows when having the lead-in wire of differing heights by three-dimension sensor 15 shootings the schematic diagram that the gray scale of captured image changes with the height change that goes between.When the higher lead-in wire of three-dimension sensor 15 shooting heights (so figure left side shown in), the visual broad that presents, and when the lower lead-in wire of three-dimension sensor 15 shooting heights (shown in the right side of figure like this), the narrower (W1＞W2) of the image that presents.Therefore, (lead-in wire) image with differing heights has different gray scales.
According to second preferred embodiment, it is visual identical that the image sensor of the soldered ball of being taken by three-dimension sensor and the check system by Fig. 1 obtain.But, higher according to the gray scale integral body of the image of second preferred embodiment.
Fig. 8 is a flow chart, is used to show the method according to the outward appearance of inspection semiconductor device of the present invention.
At first, microcomputer 11 determines whether to have set up the shooting regional N=1 of beginning and takes end region N=M in step 100.Take the beginning zone if set up, control computer 20 determines whether the user has imported the shooting commencing signal in step 200.
If in step 200, imported the shooting commencing signal by interface arrangement 19 from control computer 20, microcomputer 11 is just controlled luminous component driver 12 with the emission light beam, and control shift servo device 21 simultaneously, so that comprise that the module of luminous component, optical splitter and three-dimension sensor moves to the shooting of setting up and begins zone (N=1) in step 100.Move to shooting beginning zone (N=1) afterwards in module, in step 300, microcomputer 11 control shootings begin zone (N=1) is taken by three-dimension sensor 15, and will be stored in the memory 18 by the pictorial data that three-dimension sensor 15 is taken.
After this, in step 400, microcomputer 11 determines whether the zone of taking is to take end region (N=M) in step 300.If not taking end region (N=M), microcomputer 11 increases by 1 with the number of regions that is taken in step 500, and control shift servo device 21 makes module move to the shooting area (N=N+1) that (number of regions) increases.Move to shooting area (N=N+1) that (number of regions) increase in module afterwards, microcomputer 11 control three-dimension sensors 15 are taken the shooting area (N=N+1) that (number of regions) increases in step 300, and the control procedure of microcomputer 11 advances to step 400 subsequently.
But if determine that in step 400 zone of taking is exactly to take end region (N=M) in step 300, microcomputer just stops shooting operation in step 600.Microcomputer 11 is read the memory image corresponding to M zone continuously, so that calculate the height in captured zone according to the gray scale of relevant image in step 700.
After this, in step 700, microcomputer 11 is sent to control computer 20 by interface arrangement 19 with corresponding image with for the altitude information that these images calculate.In step 800, under the control of control computer 20, the image of transmission and altitude information are output to monitor 16 and/or printer 17.
Fig. 9 is a flow chart, is used to show the method for calculating the height of soldered ball according to the gray scale of captured image.
At first, in step 710, microcomputer 11 is read the image (i.e. the image of first semiconductor subassembly) of the first area (N=1) of taking and storing, and searches for the center of first soldered ball (S=1) in step 715 by means of the gray scale of image.
After this, in step 720, microcomputer 11 is at gray scale and the soldered ball diameter measured on eight directions near the soldered ball center of being searched for, as shown in Figure 10.
In step 725, diameter and the gray scale of each soldered ball on eight directions that microcomputer 11 is more measured.Here, Figure 11 demonstrates for the gray scale of the captured image of normal soldered ball and the relation between the diameter.In step 730, minimum diameter is selected as the representative diameter of relevant soldered ball in eight diameters.
After this, in step 740, microcomputer 11 determines whether relevant soldered ball (S) is K soldered ball (last soldered ball).If relevant soldered ball (S) is not a K soldered ball, the control procedure of microcomputer 11 is just got back to step 715 by step 745.Subsequently, be next soldered ball (S=S+1) execution in step 715-730.
But if determine that in step 740 relevant soldered ball (S) is a K soldered ball, in step 750,11 of microcomputers are distinguished the relative altitude of a calculating K soldered ball according to the maximum gauge in the diameter of K soldered ball.
After this, microcomputer 11 will the be correlated with image of shooting area (N) and the altitude information that calculates in step 750 are sent to control computer 20 by interface arrangement 19.The shooting image that is sent to control computer 20 is output to monitor, as shown in Figure 12.
Then, in step 760, microcomputer 11 determines whether the image in current shooting zone (N) is that shooting end region (M) is last semiconductor subassembly.If image is not to take end region (M), then the control procedure of microcomputer 11 is got back to step 710 by step 765.And then, at next shooting area (N=N+1), repeated execution of steps 710-755.
At last, by the content of watching monitor screen or reading the paper spare of printing, the user can check the outward appearance of semiconductor subassembly exactly according to the image and the altitude information of semiconductor subassembly.
According to preferred embodiment, a plurality of targets that check are placed in the carriage.But those skilled in the art obviously is appreciated that if a plurality of targets of checking are placed on to reel is with, and can obtain the result identical with preferred embodiment.
In addition, according to preferred embodiment, comprise that the module of three-dimensional camera, luminous component and optical splitter is moved by the shift servo device.Those skilled in the art obviously also is appreciated that if place the carriage of the target that will check or the band of reeling is moved, and mobile module not can obtain the result identical with preferred embodiment.
Though describe the present invention with reference to specific illustrative embodiment, the present invention is not the restriction that is subjected to these embodiment, but is only limited by claims.Should be understood that under situation about not departing from the scope of the present invention with spirit, those of ordinary skill in the art can change or revise these embodiment.
As mentioned above, the present invention calculates the surface state of target according to the shooting of the target that will check image and the height of the target that will check, thereby checks the Three-dimension Target outward appearance exactly.
In addition, the present invention vertically is radiated at the luminous component emitted light beams on the target by optical splitter, so that not influenced by the carriage shade.Therefore, can improve Three-dimension Target visual examination result's reliability.
Moreover the present invention places the carriage of placing a plurality of targets that will check on it on the workbench and takes a plurality of targets continuously.Therefore, compare with the conventional method that the target that will check is placed on the workbench one by one, the present invention can prevent to produce defective on the target, and has reduced the review time.
Claims (8)
1. system that is used to check the outward appearance of semiconductor device comprises:
Light irradiation device is used for the upper vertical ground illumination beam from semiconductor device;
Three-dimensional detection device, it is arranged on the upside of semiconductor device, is used for detecting beam reflected from the semiconductor device;
Image storage device is used to store the image of being taken by checkout gear;
Calculation element is used for the gray scale according to the image of being stored by image storage device, calculates the height of the presumptive area of semiconductor device;
Output device is used to export by the image of image storage device storage and the result data that is calculated by calculation element; With
Control device is used to control related device.
2. system according to claim 1, wherein said light irradiation device comprises:
Light-emitting component, vertical arrangement is in line between semiconductor device and checkout gear for they; With
Optical devices, it is arranged in line between the semiconductor device that will check and checkout gear perpendicular to light-emitting component, and the light beam that is used for coming from light-emitting component vertically reflexes to semiconductor device.
3. system according to claim 2, wherein, described light irradiation device also comprises the light-emitting component of annular, these light-emitting components are arranged on the bottom of Optical devices, be used for light beam by predetermined angle incline be radiated at semiconductor device.
4. according to claim 2 or 3 described systems, wherein, described checkout gear, Optical devices and light-emitting component constitute a module, and this system also comprises mobile device, are used for mobile module under the control of control device.
5. system according to claim 4, wherein, a plurality of semiconductor device are placed on the carriage.
6. system according to claim 5, wherein, the presumptive area of semiconductor device is soldered ball, lead-in wire or projection.
7. method that is used to check the outward appearance of semiconductor device may further comprise the steps:
Vertically be radiated at light beam on the semiconductor device;
Storage is by the pictorial information of the semiconductor device of checkout gear detection;
According to the gray scale of image of the semiconductor device of storage, calculate the height of the presumptive area of semiconductor device; With
Output result of calculation.
8. method according to claim 7, wherein, described presumptive area is a plurality of soldered balls that form on the semiconductor device, and described calculation procedure may further comprise the steps:
According to the gray scale of the image of semiconductor device, the center of search respective solder ball;
At gray scale and the diameter of on eight directions at respective solder ball center, measuring soldered ball;
Gray scale and the diameter of more measured respective solder ball on eight directions;
Minimum diameter in eight diameters of selection respective solder ball; With
According to the maximum gauge in the diameter of selecting respectively, calculate the relative altitude of a plurality of soldered balls that form on the semiconductor device.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR45537/1999 | 1999-10-20 | ||
| KR1019990045537 | 1999-10-20 | ||
| KR48320/1999 | 1999-11-03 | ||
| KR1019990048320 | 1999-11-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1296288A true CN1296288A (en) | 2001-05-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00134718 Pending CN1296288A (en) | 1999-10-20 | 2000-10-20 | System and method for checking outward appearance of semiconductor device |
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| Country | Link |
|---|---|
| CN (1) | CN1296288A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101936918A (en) * | 2010-09-02 | 2011-01-05 | 东信和平智能卡股份有限公司 | BGA (Ball Grid Array) chip vision detecting system and detecting method thereof |
| CN101676712B (en) * | 2008-09-16 | 2011-03-23 | 中茂电子(深圳)有限公司 | Optical detecting system and method thereof |
| CN102261920A (en) * | 2010-05-25 | 2011-11-30 | 广达电脑股份有限公司 | system and method for detecting three-dimensional sensor |
| CN103852976A (en) * | 2014-04-01 | 2014-06-11 | 海迪科（苏州）光电科技有限公司 | Method for periodically monitoring photolithography pattern size |
| CN104316541A (en) * | 2014-11-12 | 2015-01-28 | 京东方科技集团股份有限公司 | Defect detection device and polaroid attaching equipment |
| CN105008852A (en) * | 2013-02-20 | 2015-10-28 | 第一实业视检系统股份有限公司 | Inspection device |
| CN106030283A (en) * | 2013-11-11 | 2016-10-12 | 赛世科技私人有限公司 | An apparatus and method for inspecting a semiconductor package |
| CN110333244A (en) * | 2019-05-26 | 2019-10-15 | 江苏壹度科技股份有限公司 | A kind of semiconductor components and devices 3D detection machine |
| TWI833180B (en) * | 2022-03-15 | 2024-02-21 | 萬潤科技股份有限公司 | Integrated circuit component imaging method and device |
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2000
- 2000-10-20 CN CN 00134718 patent/CN1296288A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101676712B (en) * | 2008-09-16 | 2011-03-23 | 中茂电子(深圳)有限公司 | Optical detecting system and method thereof |
| CN102261920A (en) * | 2010-05-25 | 2011-11-30 | 广达电脑股份有限公司 | system and method for detecting three-dimensional sensor |
| CN102261920B (en) * | 2010-05-25 | 2013-07-10 | 广达电脑股份有限公司 | System and method for detecting three-dimensional sensor |
| CN101936918A (en) * | 2010-09-02 | 2011-01-05 | 东信和平智能卡股份有限公司 | BGA (Ball Grid Array) chip vision detecting system and detecting method thereof |
| CN105008852A (en) * | 2013-02-20 | 2015-10-28 | 第一实业视检系统股份有限公司 | Inspection device |
| CN105008852B (en) * | 2013-02-20 | 2017-09-26 | 第一实业视检系统股份有限公司 | Check device |
| CN106030283A (en) * | 2013-11-11 | 2016-10-12 | 赛世科技私人有限公司 | An apparatus and method for inspecting a semiconductor package |
| CN106030283B (en) * | 2013-11-11 | 2019-11-12 | 伊麦装备私人有限公司 | For examining the apparatus and method of semiconductor packages |
| CN103852976A (en) * | 2014-04-01 | 2014-06-11 | 海迪科（苏州）光电科技有限公司 | Method for periodically monitoring photolithography pattern size |
| CN104316541A (en) * | 2014-11-12 | 2015-01-28 | 京东方科技集团股份有限公司 | Defect detection device and polaroid attaching equipment |
| CN110333244A (en) * | 2019-05-26 | 2019-10-15 | 江苏壹度科技股份有限公司 | A kind of semiconductor components and devices 3D detection machine |
| CN110333244B (en) * | 2019-05-26 | 2022-01-11 | 江苏晶度半导体科技有限公司 | 3D detector for semiconductor components |
| TWI833180B (en) * | 2022-03-15 | 2024-02-21 | 萬潤科技股份有限公司 | Integrated circuit component imaging method and device |
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