CN1295544C - Vanadium oxide film micro photo-switch and its making method - Google Patents
Vanadium oxide film micro photo-switch and its making method Download PDFInfo
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- CN1295544C CN1295544C CNB2004100613948A CN200410061394A CN1295544C CN 1295544 C CN1295544 C CN 1295544C CN B2004100613948 A CNB2004100613948 A CN B2004100613948A CN 200410061394 A CN200410061394 A CN 200410061394A CN 1295544 C CN1295544 C CN 1295544C
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- vanadium oxide
- oxide film
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Abstract
The present invention discloses a vanadium oxide film micro photo-switch and a making method thereof. A bridge leg and the bridge floor of the photo-switch are made of the same medium film, and are positioned in the same plane; one end of the bridge leg is connected with the bridge floor, and the other end is erected on a metal bridge pier; the bridge floor is supported by the bridge leg and the bridge pier to suspend on a backing, and a cavity is formed between the bridge floor and the backing. A vanadium oxide film is prepared on the bridge floor, and an electrode is positioned on the metal bridge pier and is connected with the vanadium oxide film. As a micro-bridge structure is adopted, the present invention can decrease the heat capacity value of the photo-switch and improve the switching speed, and can also further adjust the heat conducting value between the photo-switch and the backing by changing parameters of the micro-bridge structure. The present invention is an all-solid device, movable components in an MOMES photo-switch are eliminated, and the reliability of the photo-switch is improved. The present invention is favorable for the development of the photo-switch array with high speed or low power consumption.
Description
Technical field
The field is the optical switching technique field under the present invention, is specifically related to a kind of vanadium oxide film micro optical switch and preparation method thereof.
Background technology
Photoswitch is the core devices in the optical communication field, and traditional mechanical photoswitch in the market has that switching time is long, and volume is big, can't form shortcomings such as large scale array, can not satisfy the growing optical communication technology and the market demand.The current photoswitch that is in the research focus mainly concentrates on five aspects, i.e. the photoswitch and the semiconductor optical amplifier (SOA) photoswitch of micro photo-electro-mechanical (MOMES) photoswitch, liquid crystal optical switch, waveguide optical switch and bubble or vacuole driving.The MOMES photoswitch is the microminiaturization of traditional mechanical formula photoswitch, realize light switch function by moving fiber or micro-reflector, can reach a millisecond magnitude its switching time, can also form extensive two dimension or cubical array, shortcoming is owing to there is movable part, the system architecture complexity, reliability need be treated further raising.Liquid crystal optical switch can overcome the shortcoming of MOMES photoswitch, does not have movable part, reliability height in the photoswitch, yet system need rise partially and the additional device of analyzing, the system construction complexity, its photoswitch speed is because the restriction of liquid crystal material is difficult to break through inferior millisecond magnitude.The switching time of waveguide type photoswitch is shorter, but generally all be planar structure, and the degree of freedom of design is little, and insert loss and power consumption all bigger.The micro optical switch that vacuole or bubble drive is to utilize the bubble of motion or vacuole to adjust waveguide index realization light switch function, and its switching time is longer.Photoswitch based on SOA also has lot of advantages, and is short as switching time, no Insertion Loss, but its polarization-sensitivity problem is never effectively solved, and apart from practicability one section long distance is arranged also.
In the material of thermochromism, some oxide and sulfide have reversible phase transition temperature characteristic, these materials are when temperature is elevated to phase transition temperature, its crystal structure can be undergone mutation, change metallic state into from nonmetal attitude, be accompanied by these changes of microstructure, significant variation also takes place in the optical transmittance of film and reflection characteristic.Vanadium oxide film a kind of membraneous material that comes to this with reversible phase transition temperature characteristic.When film temperature was lower than phase transition temperature, vanadium oxide film was monoclinic structure, showed the characteristic of semiconductor material, and the incident infrared light is had the high characteristic that sees through.When film temperature was higher than phase transition temperature, film was the tetragonal crystal system structure, showed the characteristic of metal material, and infrared light is had high reflection characteristic.The phase transition temperature of vanadium oxide film can also further reduce by mixing or changing its phase transition temperature of membrane stress state near 68 ℃.The phase velocity of vanadium oxide film is very fast, has observed up to psec (10 at present
-12Second) transformation time of magnitude.All these characteristics make vanadium oxide film become a kind of photoswitch that has wide application prospects, optical storage, light laser protection and smart window material etc.Phase transition temperature characteristic according to vanadium oxide film, this laboratory once proposed and had developed a kind of micro optical switch based on this film (Sihai Chen, Hong Ma, Xinjian Yi, Hongcheng Wang, XiongTao, Mingxiang Chen, Xiongwei Li, Caijun Ke.Optical switch based on vanadium dioxidethin films.Infrared Physics ﹠amp; Technology 45 (2004) 239-242), in this photoswitch, vanadium oxide film directly prepares on silicon substrate, and type of heating is a current flow heats, and test result shows that be a millisecond magnitude switching time of this photoswitch.In the photoswitch of this type, because vanadium oxide film is directly to be produced on the substrate, therefore when heated oxide vanadium film, the part substrate adjacent with vanadium oxide film also heated thereupon, so just increased the thermal capacitance value of photoswitch, limit the thermal response time of photoswitch, therefore adopted the photoswitch of this structure to be difficult to further shorten switching time, realized switching response fast.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art part, a kind ofization vanadium film micro optical switch is provided.This micro optical switch can reduce the thermal capacitance value of photoswitch, improves the switching speed of photoswitch; In addition, the present invention also provides the method for making of this photoswitch.
A kind of vanadium oxide film micro optical switch provided by the invention, comprise vanadium oxide film and electrode, it is characterized in that: bridge leg and bridge floor adopt and make with a kind of dielectric film, the two is positioned at same plane, one end of bridge leg links to each other with bridge floor, other end frame is on the metal bridge pier, and bridge floor is supported and suspended on the substrate by bridge leg and bridge pier, constitutes cavity between bridge floor and the substrate; The vanadium oxide film preparation is on bridge floor, and electrode is positioned on the metal bridge pier, and links to each other with vanadium oxide film.
The present invention also provides the method for making of above-mentioned photoswitch, and its step comprises:
1., spin-on polyimide film on substrate;
2., the photoetching Kapton, form polyimide figure and bridge pier hole and also the polyimide figure carried out imidization and handle;
3., with metal filled bridge pier hole, form two metal bridge piers;
4., on polyimide figure and metal bridge pier, prepare dielectric film, prepare vanadium oxide film again, vanadium oxide film thickness is 100nm-500nm;
5., utilize photoetching and etching technics to make interconnected pores, utilize stripping technology in interconnected pores He on the vanadium oxide film, to make metal electrode then;
6., on above-mentioned each thin layer, make the micro-bridge structure figure by lithography, each thin layer of etching forms bridge floor and bridge leg figure to polyimide film layer, and removes the Kapton of bridge floor and bridge leg figure bottom with oxygen plasma, forms micro-bridge structure.
Under the condition that heating power density is determined, mainly be by the decision of thermal response time of the transformation time of vanadium oxide film and optical switch construction the switching time of vanadium oxide film micro optical switch, because the transformation time very short (being picosecond magnitude) of vanadium oxide film self, so depend primarily on thermal response time of photoswitch self switching time of vanadium oxide film micro optical switch.The thermal capacitance of optical switch construction is more little, and its thermal response time is just short more, therefore can reduce the thermal time constant of photoswitch by the thermal capacitance that reduces photoswitch, improves switching speed.The microelectromechanical-systems technology of Xing Qiing also for realizing that this extra small thermal capacitance structure provides possibility, is utilized micromachined technology day by day, and can produce the cellular construction thermal capacitance is 10
-9The micro-bridge structure of J/K magnitude.
Adopt micro-bridge structure, not only can reduce the thermal capacitance value of photoswitch, improve switching speed, and, can also further adjust the thermal conductance value between photoswitch and substrate by changing the micro-bridge structure parameter.Because the power consumption of photoswitch is relevant with the thermal conductance between photoswitch and substrate, when selecting low-heat to lead micro-bridge structure, the power consumption of photoswitch can maintain very low level.When selecting high heat conducting structure, though power consumption is bigger, can further shorten switching time, improve the switching speed of photoswitch.
With respect to conventional MOMES photoswitch, the present invention is a full solid-state device, has avoided the moving-member in the MOMES photoswitch, has improved the reliability of photoswitch.With respect to the vanadium oxide photoswitch that directly is produced on the substrate, the present invention has adopted film micro-bridge structure, has reduced the thermal capacitance value of photoswitch, helps developing at a high speed or the array of photoswitch of low-power consumption.
Description of drawings
Fig. 1 is the front view of micro-bridge structure.
Fig. 2 is the structural representation of vanadium oxide film micro optical switch.
Fig. 3 is the vertical view of Fig. 2.
Fig. 4 is a face battle array array of photoswitch organigram.
Fig. 5 is micro optical switch processing process figure.
Embodiment
The vanadium oxide film micro optical switch is to utilize the micro-bridge structure be suspended on the substrate to reduce the thermal capacitance value of photoswitch, the synoptic diagram of this micro-bridge structure as shown in Figure 1, bridge leg 2,3 and bridge floor 1 adopt and are positioned at same plane with a kind of dielectric film (as carborundum, monox or silicon nitride film etc.) and the two.One end frame of bridge leg 2,3 is on metal bridge pier 4,5, and the other end supports bridge floor 1 and is suspended on the substrate 7, and forms cavity 6 between bridge floor 1 and substrate 7.
As Fig. 2, shown in Figure 3, vanadium oxide film 12 preparations are connected on microbridge bridge floor 1 and with metal electrode 10,11, and the other end of metal electrode 10,11 links to each other with metal bridge pier 4,5.On the substrate 7 gauge tap 13 can be set, be used to control the photoswitch break-make.Heating voltage is applied on the vanadium oxide film 12 by gauge tap 13 and metal bridge pier 4,5 by metal electrode 10,11.When the heating voltage at metal electrode 10,11 two ends less than threshold voltage V
ThThe time, the vanadium oxide film temperature is less than phase transition temperature, and is saturating to incident infrared light wave height, is assumed to unlatching (ON) state; When the voltage at metal electrode 10,11 two ends greater than threshold voltage V
ThThe time, the Joule heat that is produced by this voltage will heat the micro-bridge structure temperature above the vanadium oxide film phase transition temperature, and vanadium oxide film changes metallic state into by the semiconductor attitude, and is anti-to incident infrared light wave height, for closing (OFF) state.Therefore, just can control the on off operating mode of photoswitch by the voltage at control metal electrode 10,11 two ends.Threshold voltage V
ThBeing defined as the Joule heat that is produced makes vanadium oxide film be in the impressed voltage of phase transition temperature value just.
In order to eliminate the harmful effect to film performance such as working environment such as moisture, on vanadium oxide film 12, can cover layer of surface passivation layer 9, vanadium oxide film 12 and external environment are kept apart, this surface passivation layer 9 is usually by carborundum, and compact structure dielectric thin-film material such as monox or silicon nitride constitute.In addition,, on the passivation layer film, can also cover one deck optical anti-reflective film 8, this antireflective coating 8 general MgF that adopt in order to improve the transmitance of photoswitch under opening
2Etc. the lower dielectric thin-film material of refractive index.
Because vanadium oxide film 12 and support bridge floor 1 and passivation layer 9 and anti-reflection film 8 all are membrane structures, in optical switch construction, the gross thickness of membrane structure can be controlled in the 1 μ m, therefore compares with the planar structure photoswitch, and the thermal capacitance value of the photoswitch of band micro-bridge structure is very little.The bridge floor 1 of microbridge and bridge leg 2,3 are selected mechanical property electric insulating film material preferably usually for use, as silicon nitride, monox and carborundum etc.Carborundum is compared with silicon nitride material with monox, has high thermal, is fit to make high thermal conductance micro-bridge structure.And monox and silicon nitride are good heat insulators, have very low thermal conductivity, therefore are fit to make the micro-bridge structure with high heat insulation characteristics.
Typical vanadium oxide face battle array micro optical switch principle schematic as shown in Figure 4, among the figure, the array of photoswitch scale is the capable n row of m, S is an optical switch element.The principle of work of photoswitch is as follows: row selects circuit MC once can choose delegation, and column selection circuit ML once can choose row, and when row choosing and column selection circuit were chosen a certain optical switch element S simultaneously, electric current was from V
DdFlow to V
Gnd, the Joule heat that electric current produces is heated to the micro-bridge structure temperature on the thin film phase change temperature, and vanadium oxide film just transfers high reflection attitude to from the high transmission state to the incident infrared light, and on off state changes; And when removing heating current, the photoswitch that is in high temperature is cooled to room temperature, because the thermal capacitance of micro-bridge structure is very little, so intensification and cooling rate are all very fast, does not compare with there being integrated micro-bridge structure, can increase substantially the switching speed of photoswitch.
Example 1
Utilize such scheme to design a kind of high speed micro optical switch based on vanadium oxide film.This photoswitch has adopted film micro-bridge structure, has very little thermal capacitance value.In design, in order to improve the switching speed of photoswitch, bridge floor and bridge leg and passivation layer have all adopted the SiC film of high heat conductance, and its thermal conductivity is 5W/cm.K at room temperature, is Si
3N
4More than 100 times of film (0.03-0.045W/cm.K).In this scheme,, do not make antireflective coating in order to control the thermal capacitance value of photoswitch.
Table 1 low heat capacity vanadium oxide phase transformation micro optical switch design parameter table
| The bridge pier size | Φ4μm |
| The bridge pier height | 1.5μm |
| Bridge pier material (thermal conductivity) bridge floor size bridge leg size bridge floor film oxidation vanadium thin film passivation layer heating electrode | Al(1.2W/cm.K) 30× |
The concrete process implementing process of designed low heat capacity vanadium oxide film phase transformation micro optical switch as shown in Figure 5 and be described below.
A) making the substrate 7 surperficial spin-on polyimide films 14 of gauge tap 13.Utilize sol evenning machine at the substrate surface spin coating photosensitive polyimide film 14 that has cleaned and dried, the concrete thickness of Kapton can be adjusted according to designing requirement.
B) Kapton photoetching and imidization.Utilize the uv-exposure machine that Kapton 14 is carried out photoetching; form Kapton figure 15 and bridge pier hole 16; subsequently; the Kapton figure is placed in the annealing furnace of inert gas shielding and carries out the high-temperature sub amination treatment, and imidization helps improving the high-temperature stability and the mechanical property of Kapton.
C) make bridge pier 4,5.Utilize stripping technology to fill the bridge pier hole, form two metal bridge piers 4,5 with metallic aluminium or other metal good conductors.
D) preparation structural sheet film 17 and vanadium oxide film 12.Utilize plasma reinforced chemical vapour deposition or sputter deposition craft to prepare structural sheet carborundum film 17.On the carborundum film, prepare vanadium oxide film 12 subsequently.The vanadium oxide film THICKNESS CONTROL is about 100nm.
E) make interconnected pores 18.On vanadium oxide film, make interconnected pores 18 figures by lithography, and adopt vanadium oxide film and structural sheet film in wet etching or the dry etch process removal interconnected pores 18, expose the lower metal bridge pier.
F) make electrode 10,11.Utilize stripping technology to make metal electrode 10,11 in interconnected pores 18 and on the vanadium oxide film, these metal electrode 10,11 1 ends link to each other with the metal bridge pier, and the other end is connected with vanadium oxide film.
G) deposit passivation layer film 9.In order to prevent the vanadium oxide film performance degradation, on vanadium oxide film 12 and metal electrode 10,11, also prepared carborundum passivation layer 9.
H) discharge micro-bridge structure.Make the micro-bridge structure figure by lithography on above-mentioned each thin layer, each thin layer of etching forms bridge floor and bridge leg figure to polyimide film layer, and removes the Kapton of bridge floor and bridge leg figure bottom with oxygen plasma, forms micro-bridge structure.
Example 2
In the design of scheme 1, supporting layer film and passivation layer have all been selected the SiC film of high heat conductance for use, adopt the material of this high heat conductance to help improving the switching speed of photoswitch.Yet the power consumption of photoswitch is relevant with the thermal conductance of photoswitch, and thermal conductance is big more, and the power consumption of photoswitch is big approximately, and therefore, under the occasion of strictness control array of photoswitch power consumption, scheme 1 is just not too suitable, so designed scheme 2.And in the design of scheme 2, the film support layer has selected for use the compound low stress membrane that is made of monox and silicon nitride as bridge floor supporting layer film, and passivation layer has also been selected silicon nitride film for use.Compare with carborundum, the thermal conductivity of monox and silicon nitride is very little, helps reducing thermal conductance and the power consumption that reduces photoswitch between photoswitch and substrate.In order to improve the transmitance of photoswitch under opening, on the passivation layer film, also covered one deck magnesium fluoride optics anti-reflection film.
Table 2 low-power consumption micro photoswitch design parameter table
| The bridge pier size | Φ5μm |
| Bridge pier height bridge pier material bridge floor size bridge leg size bridge floor film oxidation vanadium film heating electrode passivation layer anti-reflection film | 2μm Ni 40×40μm 2 1.5×50×0.5μm 3 200nm SiO 2+200nmSi 3N 4 100nm Cr(50nm) 50nm Si 3N 4 280nm MgF 2 |
Claims (7)
1, a kind of vanadium oxide film micro optical switch, comprise vanadium oxide film and electrode, it is characterized in that: bridge leg (2,3) adopts with bridge floor (1) and makes with a kind of dielectric film, the two is positioned at same plane, one end of bridge leg (2,3) links to each other with bridge floor (1), other end frame is on metal bridge pier (4,5), and bridge floor (1) is supported and suspended on the substrate (7) by bridge leg (2,3) and bridge pier (4,5), constitutes cavity (6) between bridge floor (1) and the substrate (7); Vanadium oxide film (11) preparation is on bridge floor (1), and electrode (10,11) is positioned on the metal bridge pier (4,5), and links to each other with vanadium oxide film (12).
2, photoswitch according to claim 1 is characterized in that: be coated with surface passivation layer (9) on the described vanadium oxide film (12).
3, photoswitch according to claim 2 is characterized in that: be coated with anti-reflection film (8) on the described surface passivation layer (9).
4, according to claim 1,2 or 3 described photoswitches, it is characterized in that: substrate (7) is provided with the gauge tap (13) of control photoswitch break-make.
5, the method for making of the described photoswitch of claim 1 comprises:
1., spin-on polyimide film on substrate;
2., the photoetching Kapton, form polyimide figure and bridge pier hole and also the polyimide figure carried out imidization and handle;
3., with metal filled bridge pier hole, form two metal bridge piers;
4., on polyimide figure and metal bridge pier, prepare dielectric film, prepare vanadium oxide film again, vanadium oxide film thickness is 100nm-500nm;
5., utilize photoetching and etching technics to make interconnected pores, utilize stripping technology in interconnected pores He on the vanadium oxide film, to make metal electrode then;
6., on above-mentioned each thin layer, make the micro-bridge structure figure by lithography, each thin layer of etching forms bridge floor and bridge leg figure to polyimide film layer, and removes the Kapton of bridge floor and bridge leg figure bottom with oxygen plasma, forms micro-bridge structure.
6, method according to claim 5 is characterized in that: 5. and 6., make surface passivation layer in step on vanadium oxide film and metal electrode.
7, method according to claim 6 is characterized in that: make anti-reflection film on surface passivation layer.
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| CN1295544C true CN1295544C (en) | 2007-01-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101916609A (en) * | 2010-08-10 | 2010-12-15 | 电子科技大学 | Electrode material and use thereof |
| US10216013B2 (en) * | 2017-03-07 | 2019-02-26 | Wisconsin Alumni Research Foundation | Vanadium dioxide-based optical and radiofrequency switches |
| CN114665859B (en) * | 2022-03-25 | 2023-06-06 | 电子科技大学 | Infrared switch based on thermoelectric cooperative regulation and control of vanadium dioxide film |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4059774A (en) * | 1975-05-13 | 1977-11-22 | Thomson-Csf | Switching inverter with thermoconductive materials |
| US4067379A (en) * | 1975-08-13 | 1978-01-10 | Siemens Aktiengesellschaft | Method for the manufacture of multilayered contacts for medium-voltage vacuum power circuit breakers |
| FR2509530A1 (en) * | 1981-07-10 | 1983-01-14 | Centre Nat Rech Scient | Switching device - using semiconductor layer of vanadium pent:oxide deposited at ambient temp. |
| CN1529451A (en) * | 2003-10-05 | 2004-09-15 | 华中科技大学 | Miniature vanadium dioxide photoswitch and preparing method thereof |
| CN2762175Y (en) * | 2004-12-20 | 2006-03-01 | 华中科技大学 | Vanadium oxide film microswitch |
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- 2004-12-20 CN CNB2004100613948A patent/CN1295544C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4059774A (en) * | 1975-05-13 | 1977-11-22 | Thomson-Csf | Switching inverter with thermoconductive materials |
| US4067379A (en) * | 1975-08-13 | 1978-01-10 | Siemens Aktiengesellschaft | Method for the manufacture of multilayered contacts for medium-voltage vacuum power circuit breakers |
| FR2509530A1 (en) * | 1981-07-10 | 1983-01-14 | Centre Nat Rech Scient | Switching device - using semiconductor layer of vanadium pent:oxide deposited at ambient temp. |
| CN1529451A (en) * | 2003-10-05 | 2004-09-15 | 华中科技大学 | Miniature vanadium dioxide photoswitch and preparing method thereof |
| CN2762175Y (en) * | 2004-12-20 | 2006-03-01 | 华中科技大学 | Vanadium oxide film microswitch |
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