CN1295140A - Semi-spiral crystal selector - Google Patents
Semi-spiral crystal selector Download PDFInfo
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- CN1295140A CN1295140A CN 99113400 CN99113400A CN1295140A CN 1295140 A CN1295140 A CN 1295140A CN 99113400 CN99113400 CN 99113400 CN 99113400 A CN99113400 A CN 99113400A CN 1295140 A CN1295140 A CN 1295140A
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Abstract
Structurally, the crystal selector features that in the expanding plane of the spiral along its generating line, the spiral is wound in determined lift angle and radius in range of 180 deg, and after reaching the border, the spiral is returned for winding in the opposite direction and in the same lift angle and radius. The crystal selector of the present invention has high crystal selecting capacity and efficiency and is easy to manufacture.
Description
The present invention relates to the technology of preparing of superalloy monocrystalline, a kind of semi-spiral crystal selector that is used for the superalloy single crystal growing is provided especially.
Crucible monocrystalline melt growth technology can be divided into two big classes: seed crystal method and crystal separation method.In theory, use the seed crystal method and can prepare the monocrystalline that makes any crystalline orientation parallel with the direction of growth, but complex process; And crystal separation method since the preferential growth characteristic of cubic system alloy determine, [001] orientation of can only the growing monocrystalline consistent with the direction of growth, but single crystal preparation technology is simple, single crystal alloy often obtains optimum mechanical properties in [001] orientation more fortunately, so crystal separation method becomes the technology the most widely of single crystal super alloy preparation.
Higginbotham G.J.S is at document 1 (Higginbotham G, J.S., From research tocosteffective directional solidification and single-crystal production andintegrated approach, Materials and Technology, Vol.2,1986, No.5 mentions four kinds of monocrystalline crystal selectors in P.442-460): a. segmentation turning type; B. tilting; C. dimensional constraints formula; D. spiral.People's such as Chen Jian patent of invention document 2 (Chen Jian, Zheng Qi, in the ocean, Tang Yajun, Hu Zhuanqi, a kind of technology of preparing of metallic substance, number of patent application: introduced a kind of shrinking neck type crystal selector 95110277.X), in fact the limitation of size formula with Higginbotham can be divided in a type in essence, the document 3 (R.A.Laudise of R.A.Laudise, The growth of single crystals, Prentice Hall ihc.1970) narrated a kind of cucurbit string data crystal selector, the development of such crystal selector especially all is to use cross section scale to change the brilliant effect of choosing of playing, but become multiple necking down structure from single necking down, select the brilliant effect can be further.The inventor is in Ni based high-temperature alloy single crystal preparation technological test, once to segmentation turning type crystal selector, multiple shrinking neck type crystal selector and spiral crystal selector compare test and find, the brilliant utensil of screw selecting has the brilliant effect of the most outstanding choosing, select brilliant success ratio the highest, the crystal grain mortality is also maximum, and this also is spiral crystal selector technology obtains widespread use on single crystal blade technology a reason.
Three-dimensional continuous variation of spiral crystal selector utilization crystal growth direction found in test, combines the preferential growth characteristic of crystal growth, selects brilliant path longer simultaneously, and part has comprised shrinking neck type, and the characteristic of tilting crystal selector reaches the good brilliant effect of choosing.But the complex structure of spiral crystal selector own, crystal selector also comprises parts such as nucleation machine, transition section in addition, can only make respectively by hand at present, and manual combination causes the crystal selector complicated process of preparation, inefficiency, process repeatability is poor, the actual influence single crystal growing.
The object of the present invention is to provide a kind of semi-spiral crystal selector, it has the brilliant ability of high choosing, and preparation technology is simple, the efficient height.
The invention provides a kind of semi-spiral crystal selector, it is characterized in that: the structure of this crystal selector is, launch on the plane along bus at spiral tube, twine according to lift angle of determining and radius, on the spiral tube cross section, be limited in 180 ° of scopes, the direction of turning back when arriving the border, twine with radius with angle round about, lead angle α is 10-45 °, around radius of curvature R is 3-15mm, and the turnover radius-of-curvature of unrolling r is 2-5mm, and spiral crystal selector cross section diameter d is 4-8mm, effectively twine number of turns 1-10 circle, be preferably the 1-3 circle.
" semi-spiral crystal selector " technology of the present invention development, key feature be 180 ° and unroll, rather than 360 ° around, constitute " semi-spiral " structure (seeing Fig. 1 and Fig. 2).So-called " semi-spiral " structure is typical relatively spirane structure, typical case's spiral crystal selector structure is, launch on plane according to the lift angle α that determines along certain bus at spiral tube, and in the continuous 360 ° of windings of this upper edge, spiral tube cross section radii fixus R, the likeness in form spring.And the semi-spiral crystal selector structure is twined according to same lift angle of determining and radius, but is limited on the spiral tube cross section in 180 ° of scopes, and the direction of turning back when arriving the border is twined with radius with angle round about.The present invention's gypsum material mfg. moulding die prepares semi-spiral crystal selector with warm mould material in the high strength pasty state, and the pressure pressure injection is shaped.Use investment precision casting technology again, with the foundry goods fusible pattern, the casting system fusible pattern is combined into whole module, preparation shell (casting mold); In special-purpose directional freeze single crystal growing furnace, heating shell, casting nickel-base high-temperature single crystal alloy, and directional freeze, preparation single crystal casting.
Semi-spiral crystal selector of the present invention has following characteristics:
1, under the prerequisite of the three-dimensional continually varying essential characteristic of the crystal growth direction that has kept the spiral crystal selector, unrolls around changing 180 ° into, select brilliant mechanism constant by 360 °.
2, because of the semi-spiral structure of unrolling, form new replicated structures, replicated structures and spirane structure combined, must strengthen the brilliant characteristic of choosing of crystal selector in the turning point of unrolling,
3, in like manner, because of the semi-spiral structure of unrolling, can realize utilizing simple mould to be shaped.Die design to opening structure, realizes simple somatotype and depanning for up and down.
4, can realize crystal selector part and nucleation machine, transition section one piece die forming.
In a word, the present invention can improve the brilliant ability of choosing of crystal selector, and preparation efficiency, and the consistence of crystal selector improve single crystal preparation quality and productivity.Below by embodiment in detail the present invention is described in detail.
The pattern photo of accompanying drawing 1 semi-spiral crystal selector
Embodiment 1:
Adopt the gypsum material manufacturing to split mould, with semi-spiral crystal selector, nucleation machine and transition section one piece pressure injection are shaped, pressure injection pressure is greater than 500N, pressed material is a warm mould material in the high strength, and lead angle α is 10 °, is 8mm around radius of curvature R, the turnover radius-of-curvature of unrolling r is 2mm, spiral crystal selector cross section diameter d is 5mm, and effectively twining the number of turns is 1.5 circles, and with whole crystal selector and ready foundry goods fusible pattern, the casting system fusible pattern is combined into whole module, utilizing the investment cast technology, is master mold with above-mentioned non-detachable mold group, the preparation ceramic shell, refractory materials is corundum matter powder and sand, and binding agent is a silicon sol.Shell after the molten depanning material at vacuum oriented single crystal growing furnace top casting nickel-base high-temperature single crystal alloy (DD98X), and passes through the directional solidification growth monocrystalline through roasting.
Embodiment 2:
Spiral crystal selector preparation technology is with example 1, and parameter is changed to, and radius R=10mm is twined in lift angle α=35 °, the radius-of-curvature r=3mm that turns back that unrolls, and spiral cross section diameter d=7mm, effectively twining the number of turns is 2 circles, subsequent handling and technology and embodiment 1 are identical.
Claims (2)
1, a kind of semi-spiral crystal selector, it is characterized in that: the structure of this crystal selector is to launch on the plane along bus at spiral tube, according to lift angle of determining and radius winding, on the spiral tube cross section, be limited in 180 ° of scopes, the direction of turning back when arriving the border is twined with radius with angle round about, and lead angle α is 10-45 °, around radius of curvature R is 3-15mm, the turnover radius-of-curvature of unrolling r is 2-5mm, and spiral crystal selector cross section diameter d is 4-8mm, effectively twines number of turns 1-10 circle.
2, according to the described semi-spiral crystal selector of claim 1, it is characterized in that: effectively twine number of turns 1-3 circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99113400 CN1114721C (en) | 1999-11-03 | 1999-11-03 | Semi-spiral crystal selector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99113400 CN1114721C (en) | 1999-11-03 | 1999-11-03 | Semi-spiral crystal selector |
Publications (2)
| Publication Number | Publication Date |
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| CN1295140A true CN1295140A (en) | 2001-05-16 |
| CN1114721C CN1114721C (en) | 2003-07-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99113400 Expired - Fee Related CN1114721C (en) | 1999-11-03 | 1999-11-03 | Semi-spiral crystal selector |
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| CN (1) | CN1114721C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102205391A (en) * | 2011-04-28 | 2011-10-05 | 上海交通大学 | Device and method for manufacturing spiral grain selection device for high-temperature alloy single crystal growth |
| CN102794402A (en) * | 2012-08-21 | 2012-11-28 | 沈阳黎明航空发动机(集团)有限责任公司 | Profiling die of single crystal blade spiral crystal selector |
| CN103834990A (en) * | 2014-03-20 | 2014-06-04 | 北京科技大学 | Crystal selector for preparing directional solidification material and application thereof |
| CN105019023A (en) * | 2015-08-26 | 2015-11-04 | 江苏中电振华晶体技术有限公司 | Seeding method for growth of sapphire crystal with KY (Kyropoulos) method |
| CN105414482A (en) * | 2015-11-11 | 2016-03-23 | 沈阳黎明航空发动机(集团)有限责任公司 | High-strength ceramic initial segment and manufacturing method thereof |
| CN107520403A (en) * | 2017-07-21 | 2017-12-29 | 中国科学院金属研究所 | A kind of preparation method of high intensity single crystal casting spiral crystal selector |
-
1999
- 1999-11-03 CN CN 99113400 patent/CN1114721C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102205391A (en) * | 2011-04-28 | 2011-10-05 | 上海交通大学 | Device and method for manufacturing spiral grain selection device for high-temperature alloy single crystal growth |
| CN102205391B (en) * | 2011-04-28 | 2012-11-28 | 上海交通大学 | Device and method for manufacturing spiral grain selection device for high-temperature alloy single crystal growth |
| CN102794402A (en) * | 2012-08-21 | 2012-11-28 | 沈阳黎明航空发动机(集团)有限责任公司 | Profiling die of single crystal blade spiral crystal selector |
| CN102794402B (en) * | 2012-08-21 | 2014-07-16 | 沈阳黎明航空发动机(集团)有限责任公司 | Profiling die of single crystal blade spiral crystal selector |
| CN103834990A (en) * | 2014-03-20 | 2014-06-04 | 北京科技大学 | Crystal selector for preparing directional solidification material and application thereof |
| CN103834990B (en) * | 2014-03-20 | 2016-06-29 | 北京科技大学 | A kind of crystal selector preparing unidirectional solidification material and application thereof |
| CN105019023A (en) * | 2015-08-26 | 2015-11-04 | 江苏中电振华晶体技术有限公司 | Seeding method for growth of sapphire crystal with KY (Kyropoulos) method |
| CN105019023B (en) * | 2015-08-26 | 2017-08-11 | 江苏中电振华晶体技术有限公司 | A kind of seeding methods of kyropoulos growing sapphire crystal |
| CN105414482A (en) * | 2015-11-11 | 2016-03-23 | 沈阳黎明航空发动机(集团)有限责任公司 | High-strength ceramic initial segment and manufacturing method thereof |
| CN105414482B (en) * | 2015-11-11 | 2017-11-07 | 沈阳黎明航空发动机(集团)有限责任公司 | A kind of high-strength ceramic the initial segment and preparation method thereof |
| CN107520403A (en) * | 2017-07-21 | 2017-12-29 | 中国科学院金属研究所 | A kind of preparation method of high intensity single crystal casting spiral crystal selector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1114721C (en) | 2003-07-16 |
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