CN1287287A - Active matrix liquid crystal display element and its producing method - Google Patents
Active matrix liquid crystal display element and its producing method Download PDFInfo
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- CN1287287A CN1287287A CN00126983A CN00126983A CN1287287A CN 1287287 A CN1287287 A CN 1287287A CN 00126983 A CN00126983 A CN 00126983A CN 00126983 A CN00126983 A CN 00126983A CN 1287287 A CN1287287 A CN 1287287A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0247—Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes
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Abstract
An active matrix liquid crystal display element and its producing method, characterized in that, as one part of the pixel output wiring portion of the drain electrode and one part of the scan line of the grid electrode are approximately vertically configured. Thereby, the drain electrode and the grid electrode overlap, wherein the overlap section form the parasitic capacitance between the drain electrode and the grid electrode. The parasitic capacitance constitute the flicker suppressing means and is disposed in the vicinity of the drain electrode as one part of the scanning line pixel output wiring section. The scanning line input section and the far end have different parasitic capacitances through adjusting the size of the overlap section to configure the flicker suppressing means. Hence, the flicker is reduced, the uniformity of a display screen is improved and the quality is advanced.
Description
The present invention relates to be used for the active matrix liquid crystal display element and the manufacture method thereof of OA equipment or AV equipment etc.Relate in particular to the liquid crystal display cells of big picture (Large areas), high image quality (High picture quality) and high resolving power (High definition).
Current, the display element of use liquid crystal just is being widely used in view finder (View finder) or the colored TV of video camera (Video camera), and be applied to Message Display Terminal various fields such as (Information display terminal) such as high resolving power projection-type (High Definitionprojection-type) TV, personal computer (Personal computer), word processor (wordprocessor), LCD monitor, and then flourishing exploitation and commercialization.Particularly adopt film (Thin film) transistor (following represent with TFT) as the active array type TN of on-off element (Twisted Nematic: rotation to row) liquid crystal display device, demonstration also keeps high-contrast even its a big feature is high capacity.Nowadays, be badly in need of the large-scale high capacity full color display that laptop personal computer or notebook-sized personal computer and engineering design workstation are used on the market greatly, this situation is actively being developed and commercialization in order to adapt to.
Active array type is an a kind of and existing simple matrix (direct matrix: the type liquid crystal drive mode of comparing Direct matrix), this mode is respectively arranged with the on-off elements such as TFT in source being disposed at pixel electrode (Pixel electrode) on the matrix, provide electric signal to each pixel electrode respectively by these on-off elements, the optical characteristics of control liquid crystal.This type of drive can reduce crosstalk (Crosstalk) that sees in the simple matrix mode on principle, be that a kind of big picture, high resolving power, many gray scales that extremely is fit to liquid crystal display cells shows the mode of (multi-tone reproduction).
But even in such active-matrix liquid crystal display device, along with the picture increase of display element, the raising of resolution, its image quality also has decline to a certain degree inevitably.Especially such problem can appear, promptly the picture along with display element increases, capacitive component between the grid drain electrode of the resistive component of sweep trace and on-off element (being TFT), it is the stray capacitance of the overlapping region generation of sweep trace importation and pixel output distribution part, can cause the delay of scanning-line signal, thereby to cause distributing in the face of flickering be that the homogeneity of display frame degenerates.Below, this problem is described.
Fig. 5 illustrates the general equivalent electrical circuit of active matrix liquid crystal display element.Wherein, many sweep traces 101 and many signal wire 102 orthogonal configuration and at their intersection point place on-off element to be set be TFT103.Though represent sweep trace 101 and signal wire with 3 respectively on the figure, should see that these radicals are than actual much less.Memory capacitance 105 is used to improve the retentivity of the pixel voltage that imposes on liquid crystal capacitance 104.Between grid drain electrode, there are stray capacitance (Parasitic capacitance) 106 (Cgd) on its structure of TFT103.
Fig. 6 illustrates the general structural drawing of TFT.TFT has grid 201 (sweep trace), the source electrode 202 (signal wire) and 203 (the pixel output distribution parts) that drain. Grid 201 and 203 of drain electrodes accompany insulation course 207 and have grid and the overlay region of drain electrode 204.Between the grid of TFT and drain electrode, cause stray capacitance 106 (Cgd) by this overlay region 204.
Though not shown among Fig. 6, with source electrode 202 and 203 the side opposite of draining with grid 201, promptly under the state of front elevation 6 above drain electrode 203 grades, be furnished with liquid crystal, and this liquid crystal applied signal by FET with above-mentioned electrode.Is furnished with counter electrode (Counter electrode) at the liquid crystal side relative with FET.
Fig. 7 is the signal waveform of expression active matrix liquid crystal display element work shown in Figure 1.Expression adds to the grid voltage 301 (scanning-line signal) of TFT103 grid, the signal voltage 302 of source electrode 202 that adds to TFT103 and their relative time relationship and wave form varies of pixel voltage 303 by sweep trace 101 shown in Figure 5.Pixel voltage is the voltage that pixel electrode takes out.As shown in Figure 7, by the sweep signal of selected sweep trace, make the grid voltage 301 of TFT be the ON state, then signal voltage 302 is supplied with pixel electrode through TFT.On the contrary, (height: (low: LOW) during state, pixel voltage 303 changes with stray capacitance 106 (Cgd) grid voltage HIGH) to become OFF from the ON state.The changes delta Vp of this pixel voltage 303 is called feed-trough voltage (Feedthrough voltage).If setting the amplitude of grid voltage 301 and be the value of Vg, liquid crystal capacitance 104 and be the value of Clc, memory capacitance 105 is Cst, then feed-trough voltage Δ Vp can use following formula (1) approximate expression.
Δ Vp=Vg (Cgd/Ct) ... (formula 1)
Wherein, Ct=Clc+Cst+Cgd
For the undesirable feed-trough voltage Δ Vp that produces in the compensation pixel electrode, the voltage that normally will add to described counter electrode is adjusted to suitable value.Even but the voltage that will add to counter electrode is adjusted to suitable value, the capacitive component C and the resistive component R that also can not ignore sweep trace 101 owing to the increase of the size of following liquid crystal display and pixel count, thereby the signal delay problem that their CR time constant causes still exists.
Fig. 8 illustrates the variation that there is the pixel voltage when postponing in grid voltage (voltage of sweep trace 101).At this moment, signal voltage is to add to pixel electrode under the ON state at grid voltage.When grid voltage when the ON state becomes the OFF state, produce phenomenon as hereinbefore, in case generation signal delay, grid voltage 301 just changes, in case this grid voltage changes, then pixel voltage is subjected to the influence of stray capacitance 106 (Cgd) and changes, meanwhile, TFT moment can not become the OFF state, thereby signal voltage can charge to pixel electrode simultaneously.At this moment, the size and the interior liquid crystal applied voltages difference of liquid crystal display picture that add to the voltage of counter electrode also are affected, thereby liquid crystal panel produces flickering, and the image quality (picture quality) of liquid crystal display cells is descended.
Recently, in order to get rid of with undesirable flickering that the liquid crystal display cells size increases and the resolution raising produces, exploitation also proposes various methodologies.Basic problem is how to do the feed-trough voltage Δ Vp of formula (1) little.In order to reduce feed-trough voltage Δ Vp, as the formula (1), adopt memory capacitance Cst is made big method.But, must improve the driving force of TFT in this method with this, thereby will strengthen component size certainly.Thereby in the method, the result is related to increasing stray capacitance, can not say so effectively.In addition, from formula (1) as seen, also can adopt the stray capacitance 106 (Cgd) that reduces TFT to reduce feed-trough voltage Δ Vp, so far, deliver the numerous schemes that reduce the concrete operation of stray capacitance about exploitation.But,, in fact also be difficult to get rid of the capacitive component of TFT channel part even can make stray capacitance be reduced to the degree that in fact can ignore by the manufacturing process that improves, improves liquid crystal display cells and TFT.Thereby, if the display element high resolving power is made progress forward and require TFT to improve running speed, just must improve the driving force of TFT, and then must strengthen the size of TFT.This is associated with the stray capacitance that increases TFT, thereby can not become effective countermeasure.
In adopting the active matrix mode of TFT, as the known method of avoiding strengthening feed-trough voltage that has Japanese kokai publication hei 9-258261 communique (below be called prior art 1) to be disclosed of prior art as on-off element.In this prior art 1, disclosed, strengthen the size of TFT along with the far-end that arrives grid bus, or in the liquid crystal display that comprises the TFT that source electrode is linked to each other with pixel electrode, the size of dwindling each pixel electrode along with the far-end (terminal) that arrives grid bus (being equivalent to sweep trace of the present invention).
But the technological thought that is disclosed in prior art 1 is to allow the size difference of TFT, thereby is difficult to the liquid crystal drive condition that finds whole active matrix liquid crystal display element all to be satisfied with.
In order to suppress to produce flickering in the active matrix liquid crystal display element, for example disclosed a kind of technological thought in the Japanese kokai publication hei 5-232512 communique (below be called prior art 2), promptly at the width (W) of the raceway groove of the input side of the gate line that signal (sweep signal) is provided (sweep trace) and distal side gauge tap element (TFT) and the ratio W/L of length (L).In prior art 2, disclosed, make the drain current of on-off element (TFT) become big by far-end, reduce to connect (ON) resistance, reduce the time constant that on-off element has at gate line, to revising the time delay that the line resistance of gate line causes, thereby make the charge characteristic unanimity.
This prior art 2 is also the same with prior art 1, owing to be (to use) increasing to form the ratio W/L of channel width (W) with the length (L) of the on-off element (TFT) that connects gate line to its distal side certainly by the implication identical with terminal from the input of signal is distolateral, thereby also be difficult to find satisfied liquid crystal drive condition, lack practicality.
In addition, in Japanese kokai publication hei 5-232509 communique (below be called prior art 3), the active matrix liquid crystal display apparatus that adopts TFT disclosed and made the different and technological thought of inhibition flickering of auxiliary capacitor (Auxiliary capacitance) in the input side of signal and its distal side.
Prior art 3 is, in order to reduce to eliminate the problem that produces briliancy inclination and part flickering because of the coupling of charge characteristic or stray capacitance CGS generation by and its distal side distolateral, so reduce auxiliary capacitor at far-end (terminal) in the distolateral increasing of input from the signal that gate line provides in input.
In order further to suppress the flickering in the liquid crystal indicator, disclosed the structure that reduces and strengthen electric capacity between grid and source electrode at the input side of signal wire in the Japanese kokai publication hei 11-84428 communique (below be called prior art 4) in its distal side.
The formation that prior art 4 is disclosed is, utilizes said structure to adjust poor between pixel of current potential decline component that the gate source interelectrode capacity reduces pixel electrode.The technological thought that this prior art 4 has disclosed with the present application similarly constitutes.
Also promptly, disclosed the TFT of the distolateral pixel of input in Figure 27 (a) and the TFT in Figure 27 (b) respectively, and disclosed to be provided with and regulated figure (pattern) 12 at source S D1 away from input distolateral (far-end).Be provided with away from the part of channel length L and the channel width W of regulation thin film transistor (TFT) TFT but also disclosed this adjusting figure 12.
But prior art 4 does not disclose the thought of disclosed source electrode and the configuration of drain electrode almost parallel.Do not disclose these two kinds of electrodes and grid orthogonal configuration roughly yet.In addition, the edge lengths that does not also disclose the opposition side by adjusting the drain electrode relative with source electrode is adjusted the stray capacitance that grid and drain electrode produce, and is being provided with space segment in order to adjust drain width near draining on the grid.
The object of the present invention is to provide a kind of active matrix liquid crystal display element and manufacture method thereof, it can improve the homogeneity of display frames such as the briliancy distribution that constitutes the big problem in the display screen design, flickering distribution, with maximization and the high resolving power that adapts to liquid crystal display cells.
In order to solve above-mentioned problem, active matrix liquid crystal display element of the present invention disposes many sweep traces on substrate, many signal wires, many pixel electrodes and comprise sweep trace importation, signal wire importation and a plurality of on-off elements of pixel output distribution part; The phase-splitting of described signal wire importation and described pixel output wiring part mutually to and the almost parallel configuration, and they and described sweep trace approximate vertical are configured to rectangular; Described pixel electrode and described on-off element are arranged near described sweep trace and the described signal wire intersection point; Described sweep trace connects the described sweep trace importation of described on-off element, and described signal wire connects the described signal wire importation of described on-off element, and described pixel electrode connects the described pixel output distribution part of described on-off element; Near described pixel output distribution part, be provided with the feed-trough voltage that suppresses this active matrix liquid crystal display element and suppress means in the flickering of the distolateral different display frame flickerings that cause of sweep trace input with its distal side.
Thus, on described sweep trace and a side not relative with described signal wiring part widen the width of pixel output distribution, thereby do not influence channel width or the channel length of TFT, just can regulate the stray capacitance of flickering inhibition means.
The present invention's active matrix liquid crystal display element on the other hand is characterized in that, the flickering inhibition means of described claim 1 are the parts of described pixel output distribution part, are configured in away from described signal wire importation one side.Thus, can regulate the parasitic capacitance that flickering suppresses means, and not hinder the channel width of TFT and the size of channel length.
The active matrix liquid crystal display element of another invention of the present invention is in the described active matrix liquid crystal display element of claim 1, it is characterized in that the adjustment of the stray capacitance of flickering inhibition means is to adjust described pixel output distribution distribution width partly by the space segment that is provided with to carry out near pixel output distribution part on the sweep trace.Thus, the space segment that the adjustment stray capacitance is used is pre-configured in pixel output distribution neighbouring part partly, can conveniently set stray capacitance.
The active matrix liquid crystal display element of another invention of the present invention is in the described active matrix liquid crystal display element of the arbitrary claim of claim 1 to 3, it is characterized in that, described sweep trace, signal wire and pixel output distribution part are connected grid, source electrode and the drain electrode of TFT respectively, carry out the stray capacitance adjustment that described flickering suppresses means by a part of distribution width of adjusting away from described source side of described drain electrode.Thus, can not have influence on source side even adjust the distribution width of drain electrode yet, thereby can not have influence on the channel width of TFT and the size of channel length.
The active matrix liquid crystal display element of another invention of the present invention is in the described active matrix liquid crystal display element of claim 1, it is characterized in that the stray capacitance adjustment of flickering inhibition means is by adding the space segment of continuing to employ and adjust described pixel output distribution distribution width partly and carry out near pixel output distribution part on the sweep trace.Thus, be provided with in advance and adjust the space that stray capacitance is used, can adjust stray capacitance easily.
The active matrix liquid crystal display element of another invention of the present invention is in the described active matrix liquid crystal display element of claim 1, it is characterized in that, select to such an extent that make distolateral little of input from the size of the distolateral stray capacitance to its distal side of the input of sweep trace in the described flickering inhibition means, and its distal side is big.Thus, can regulate the feed-trough voltage that produces flickering, distolateral and its distal side has the relation of required size or regulation in input to make it.
The active matrix liquid crystal display element of another invention of the present invention is in the described active matrix liquid crystal display element of claim 5, it is characterized in that, distolateral from the sweep trace input to its distal side, be the adjustment that unit carries out electric capacity in the described flickering inhibition means with the piece.Thus, even do not regulate the stray capacitance of TFT one by one, also flickering can be suppressed to the practical unobstructive degree that.
In addition, the present invention is a kind of manufacture method of active matrix liquid crystal display element, it is characterized in that, when making as the described active matrix liquid crystal display element of the arbitrary claim of claim 1 to 6, changes conditions of exposure and suppresses means with the preparation flickering.Thus, in the manufacturing process of actual liquid crystal display cells, can take the flickering countermeasure, and not increase operation.
The manufacture method of the active matrix liquid crystal display element of another invention of the present invention is when making as the described active matrix liquid crystal display element of the arbitrary claim of claim 1 to 6, prepares flickering according to exposure with mask specification and suppresses means.Thus, set pixel output distribution distribution width partly with exposure with mask, so can guarantee the adjustment of stray capacitance size.
Summary of drawings
Fig. 1 is an active matrix liquid crystal display element equivalent circuit diagram in the invention process form 1 and 2;
It is the top view of TFT in the invention process form 1 that Fig. 2 (a) reaches (b);
Fig. 3 is the curve map of subtend voltage optimum value measurement result in the expression active matrix liquid crystal display element of the present invention;
It is the planar configuration of the TFT of the invention process form 2 that Fig. 4 (a) reaches (b);
Fig. 5 is existing active matrix liquid crystal display element equivalent circuit diagram;
Fig. 6 is the major part sectional view of existing TFT;
Fig. 7 is the oscillogram of the existing active matrix liquid crystal display element work of expression.
Fig. 8 is the oscillogram of the existing grid voltage of expression pixel voltage change when having signal delay.
Below, with reference to each example of description of drawings the present invention.
Label declaration in above-mentioned each accompanying drawing.The 101-sweep trace, 102-signal wire, 103-on-off element (TFT element), the 104-liquid crystal capacitance, 105-memory capacitance, 106-stray capacitance, the 107-pixel electrode, 201-grid, 202-source electrode, the 203-drain electrode, the lap of 204-grid drain electrode, 205-pixel electrode, 206-pixel output distribution part, 207-insulation course, 301-grid voltage, the 302-signal voltage, the 303-pixel voltage.
Example 1
Fig. 1 represents the part of equivalent circuit diagram of the active matrix liquid crystal display element of the invention process form 1.Sweep trace 101 and signal wire 102 be orthogonal configuration Cheng Duogen roughly.The link of sweep trace 101 connects not shown line driver, and the grid of a plurality of on-off elements (TFT) 103 connects corresponding scanning line 101 respectively.
Each drain electrode of a plurality of on-off elements 103 connects corresponding pixel electrode 107 respectively, and between pixel electrode 107 and not shown counter electrode formation memory capacitance 104 and liquid crystal capacitance 105.
On-off element (TFT) 103 for example can be with the thin film transistor (TFT) of amorphous silicon as semiconductor layer.There is stray capacitance 106 between the drain electrode of TFT103 and grid on the structure.Technological thought of the present invention is not reduce, get rid of this stray capacitance, but actively is used, and pre-configured grid 201 and its size is set makes its size is set on the desired value.
(m-1, n) individual TFT103 is configured to be electrically connected with (m-1) root sweep trace 101 and n root signal wire 102.(m, n) individual TFT103 is configured to be electrically connected with m root sweep trace 101 and n root signal wire 102.(m-1, n+1) individual TFT103 is configured to be electrically connected with (m-1) root sweep trace 101 and (n+1) root signal wire 102.(m, n+1) individual TFT103 is configured to be electrically connected with m root sweep trace 101 and (n+1) root signal wire 102.
Fig. 2 illustrates the top view of the TFT103 of example 1 shown in Figure 1.Fig. 2 (a) illustrate and be configured among the rectangular a plurality of TFT103 of Fig. 1 (m-1, n) individual and (m, n) individual any, Fig. 2 (b) illustrate among the TFT103 (m-1, n+1) individual and (m, n+1) individual.
At Fig. 2 (a) and (b), these figure are seen in the front, and scanning-line signal (signal) is added to the right side from the left side.Also promptly, TFT is configured in the signal input side shown in Fig. 2 (a), and TFT is configured in its distal side (end side) shown in Fig. 2 (b).
Fig. 2 (a) is with (b) difference, one side drain electrode 203 not with source electrode 202 relative being adjusted, thereby width W 2 is adjusted, and makes the grid 201 of TFT and the area of the lap 204 of drain electrode 203, promptly stray capacitance 106 is set in setting.In other words, the present invention is being to leave the space segment that the adjustment drain-size is used on the grid 201 with near pixel is exported the relative face of distribution signal wire partly on the sweep trace only.Here, so-called space segment is meant that the layer identical with sweep trace (grid 201) and signal wire (source electrode 202) also is the zone that dielectric film 207 tops do not exist distribution and element.That is to say that the structure that the flickering that the present invention adjusts stray capacitance suppresses means comprises the drain electrode 203 that is equivalent to pixel output distribution part and is arranged on the space segment of being prepared for the distribution width W 2 of adjusting this drain electrode 203 on the grid 201 by dielectric film 207.
One end of drain electrode 203 is configured on the line identical with grid 201 1 ends or crosses over gate configuration.Also promptly, drain electrode 203 is adapted to the width W 1 of crossing over grid 201.Thus, can widen the setting range of the stray capacitance 106 that forms between grid 201 and the drain electrode 203.
The all of the source area S of TFT and drain region D disposes to such an extent that can't see from grid 201.Like this, drain electrode 203 can extend to the end of grid 201, has further enlarged the setting range of stray capacitance 106.
Adjustment, the setting of the stray capacitance 106 between the grid of TFT, drain electrode can be carried out according to the unit one by one of TFT103 is cumulative to its distal side from the input of sweep trace 101 is distolateral, also can be not according to the unit one by one of TFT103, and be that unit carries out with the piece of liquid crystal display cells, for example, also can import and distolaterally be divided into three to its distal side one, stray capacitance 106 basic fixed between the grid drain electrode of the TFT103 in each interval from sweep trace.That is, also the size of stray capacitance 106 can be set at 3 classes.
As shown in Figure 2, the part of grid 201 shared sweep traces 101.The part of source electrode 202 common signal line 102.The part that drain electrode 203 connects drain region D and shared pixel output distribution part 206 has.One end of pixel output distribution part 206 connects pixel electrode 205 and partly represents the lap 204 of grid 201 and drain electrode 203 with oblique line.This grid 201 is exactly the stray capacitance district part of TFT103 with the lap 204 of drain electrode 203, also is to constitute the part that flickering of the present invention suppresses means.
Among Fig. 2, source electrode 202 (signal wire 102) and drain 203 at least near grid 201 mutually relatively and configured in parallel, and, these two electrodes roughly with grid 201 (sweep trace 101) orthogonal configuration.Source electrode 202 for example connects the source area S of the TFT103 that forms with amorphous silicon layer, and drain electrode 203 connects drain region D.The electrode widths W 1 of grid 201 clearlys show as Fig. 2, sets widelyer than the electrode widths W 2 of electrode 203.Grid 201 is the long-pending of electrode widths W 1 and W2 with the area of the lap 204 of drain electrode 203.Therefore, if the electrode widths W 1 of gate electrode 201 is set at big as far as possible value (width), in the time of will obtaining area identical so, the electrode widths W 2 of desirable little drain electrode 203.
Also promptly, the invention reside in, the 1st sets the electrode widths W 1 of grid 201 big as far as possible.The 2nd also disposes source electrode 202 and the configuration of drain electrode 203 almost parallels with grid 201 approximate vertical (quadrature).The adjustment of the stray capacitance that the 3rd grid 201 and drain electrode are 203 is to be undertaken by the width of adjusting drain electrode 203 on the grid length direction.
Below, the concrete setting and the adjustment of stray capacitance 106 values are described.As this example, in the operation of the drain electrode 203 that forms film pattern formation TFT103, exposure level sweep velocity or exposing quantity when exposing by changing dwindle modified value with control, formed active matrix liquid crystal display element is had as shown in Figure 2, and the stray capacitance district of n TFT on sweep trace 101 direction of scanning is than the little figure in stray capacitance district of (n+1) individual TFT.The graphical application of this structure in the liquid crystal display of 13.3 type XGA, is measured the optimum value (optimum value of flickering characteristic) of subtend voltage of voltage supply side, core and the far-end of sweep trace 101.
Fig. 3 illustrates the measurement result of the subtend voltage optimum value of the present invention and prior art example.The measured value of curve 31 expression existing structure liquid crystal displays among Fig. 3.The prior art display screen even whole liquid crystal display is adjusted to subtend voltage optimum value, also can be seen flickering producing poor about about 0.3V with power supply terminal near the supply terminals.Yet the measured value of the liquid crystal display of curve 32 expression examples 1 structure, the difference of voltage supply side and power supply terminal is suppressed to below the 0.1V, if adjust to subtend voltage optimum value, just can't see flickering, has increased substantially the homogeneity of display frame characteristic.
Fig. 6 is the sectional view of part shown in the TFT103 top view among Fig. 2.Grid 201 is formed on for example not shown substrate.The part of grid 201 shared sweep traces.The part of source electrode 202 common signal line.The part of 203 shared pixels that drain output distribution part.Grid 201 illustrates with lap 204 with dashed lines and the arrow of drain electrode 203.
Example 2
The equivalent electrical circuit of the active matrix liquid crystal display element of example 2 is shown in Fig. 1, identical with example 1.As this example, formed active matrix liquid crystal display element in the operation of the drain electrode 203 that forms film pattern formation TFT103, the width W n that adopts n the TFT drain electrode 204 that connects sweep trace 101 shown in Fig. 4 (a) during exposure controls the width of each drain electrode than drain 204 the little photomask of width (Wn+1) of (n+1) shown in Fig. 4 (b) individual TFT, has adjusted the stray capacitance between the grid drain electrode of TFT103.The graphical application of this structure in the liquid crystal display of 13.3 type XGA, and is measured the subtend voltage optimum value (optimum value of flickering characteristic) of voltage supply side, core and the terminal of sweep trace.
As mentioned above, liquid crystal display according to active matrix liquid crystal display element with structure of the present invention, for become in design along with liquid crystal large scaleization, high resolving power serious problems because of distribution postpones and the TFT effect of parasitic capacitance produces image quality issues such as flickering, because making stray capacitance have in the face distributes, so can improve the homogeneity of display frame, realize the liquid crystal display of high image quality.
Claims (8)
1. active matrix liquid crystal display element, it is characterized in that, on substrate, dispose many sweep traces, many signal wires, many pixel electrodes and comprise sweep trace importation, signal wire importation and a plurality of on-off elements of pixel output distribution part; The phase-splitting of described signal wire importation and described pixel output wiring part mutually to and the almost parallel configuration, and they and described sweep trace approximate vertical are configured to rectangular; Described pixel electrode and described on-off element are arranged near described sweep trace and the described signal wire intersection point; Described sweep trace connects the described sweep trace importation of described on-off element, and described signal wire connects the described signal wire importation of described on-off element, and described pixel electrode connects the described pixel output distribution part of described on-off element; Near described pixel output distribution part, be provided with the feed-trough voltage that suppresses this active matrix liquid crystal display element and suppress means in the flickering of the distolateral different display frame flickerings that cause of sweep trace input with its distal side.
2. active matrix liquid crystal display element as claimed in claim 1 is characterized in that, described flickering inhibition means are parts of described pixel output distribution part, are configured in away from described signal wire importation one side.
3. active matrix liquid crystal display element as claimed in claim 1, it is characterized in that near adjust described pixel output distribution part pixel output distribution part on the sweep trace by the space segment that leaves distribution width carries out the stray capacitance adjustment that described flickering suppresses means.
4. as the described active matrix liquid crystal display element of the arbitrary claim of claim 1 to 3, it is characterized in that, described sweep trace, signal wire and pixel output distribution part are connected grid, source electrode and the drain electrode of TFT respectively, carry out the stray capacitance adjustment that described flickering suppresses means by a part of distribution width of adjusting away from described source side of described drain electrode.
5. active matrix liquid crystal display element as claimed in claim 1 is characterized in that, the size from the distolateral stray capacitance to its distal side of the input of sweep trace in the described flickering inhibition means is, imports distolateral for a short time, and its distal side is big.
6. active matrix liquid crystal display element as claimed in claim 5 is characterized in that, and is distolateral to its distal side from the sweep trace input, is the adjustment that unit carries out electric capacity in the described flickering inhibition means with the piece.
7. the manufacture method of an active matrix liquid crystal display element is characterized in that, when making as the described active matrix liquid crystal display element of the arbitrary claim of claim 1 to 6, changes conditions of exposure and suppresses means with the preparation flickering.
8. the manufacture method of an active matrix liquid crystal display element is characterized in that, when making as the described active matrix liquid crystal display element of the arbitrary claim of claim 1 to 6, suppresses means according to each flickering of exposure mask specification system.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP249991/1999 | 1999-09-03 | ||
| JP24999199A JP2001075127A (en) | 1999-09-03 | 1999-09-03 | Active matrix type liquid crystal display element and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1287287A true CN1287287A (en) | 2001-03-14 |
Family
ID=17201221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00126983A Pending CN1287287A (en) | 1999-09-03 | 2000-09-01 | Active matrix liquid crystal display element and its producing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2001075127A (en) |
| KR (1) | KR20010030241A (en) |
| CN (1) | CN1287287A (en) |
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| JPH05232512A (en) * | 1992-02-25 | 1993-09-10 | Sanyo Electric Co Ltd | Liquid crystal display device |
| JPH09258261A (en) * | 1996-03-19 | 1997-10-03 | Fujitsu Ltd | Liquid crystal panel |
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- 1999-09-03 JP JP24999199A patent/JP2001075127A/en active Pending
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2000
- 2000-09-01 CN CN00126983A patent/CN1287287A/en active Pending
- 2000-09-02 KR KR1020000051834A patent/KR20010030241A/en not_active Application Discontinuation
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20010030241A (en) | 2001-04-16 |
| JP2001075127A (en) | 2001-03-23 |
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