CN1286494A - Programming method for mask-type ROM - Google Patents
Programming method for mask-type ROM Download PDFInfo
- Publication number
- CN1286494A CN1286494A CN99118196.4A CN99118196A CN1286494A CN 1286494 A CN1286494 A CN 1286494A CN 99118196 A CN99118196 A CN 99118196A CN 1286494 A CN1286494 A CN 1286494A
- Authority
- CN
- China
- Prior art keywords
- mask
- procedure code
- photomask
- yard
- type rom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000005468 ion implantation Methods 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 238000012546 transfer Methods 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000012940 design transfer Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
A programming method for mask-type ROM features that the original program mask A used for ion implantation is divided into two masks C and D by logic operation principle to make both have balanced patterns. They play the role of mask A, but has greater making window, resulting in higher success rate.
Description
Mask design when the present invention relates to the semiconductor ion and injecting particularly relates to the method for programming of mask-type ROM (Mask ROM).
Photoetching (photolithography) we can say in the whole semiconductor technology, extremely one of Ju Zuqingchong step.The pattern of every each layer film or the decision of extrinsic region, all be decide by lithography step.Therefore the ability on photoetching process often can be represented the technological ability of a factory.
The basic principle of photoetching process is the transfer of pattern.At first be to be covered with one deck photoresist on wafer (wafer), photoresist is a kind of photosensitive material, can expose to the sun according to changing its chemical property because of being subjected to light.Then, will come from the parallel rays of light source,, expose to the sun according on this photoresist layer through a photomask based on glass (mask).Because pattern (light tight) is arranged on the photomask, therefore will make light through after the photomask, also have the figure identical with photomask, this just makes photoresist layer be carried out optionally sensitization.So the figure on the photomask just also is " transferred " to photoresist layer, after developing, just the potential figure that photoresist layer shifted can be displayed again.
But because photoetching process is the pattern on the photomask will be passed on the photoresist, photoresist need possess certain thickness, in order to make the pattern can be fully and be transferred on the photoresist accurately, as Fig. 1, be covered with a photoresist layer 13 on the wafer 11, light 12 also need make the surperficial a of photoresist and bottom b all can be exposed.In theory, as long as we obtain a depth of focus and exposure parameter, just can be to photoresist with all design transfer.Yet in fact because problems such as the interference of light itself, reflection, diffraction, different patterns has different exposure parameters.
Fig. 2 a has only central authorities that the photomask of figure is arranged, and the figure after its exposure is (island) pattern of one " island shape " shown in Fig. 2 c.If desire to make this island shape pattern to expose fully, its exposure parameter is that island shape is made window 31 (island windoW) among Fig. 3.In other words, if desiring to make this island shape pattern to expose fully is revealed on the photoresist, exposure parameter must be to transfer to this island shape to make in the window 31.
Fig. 2 b all has pattern around one, has only central authorities not have the photomask of figure, and the figure after its exposure is (hole) pattern of one " hole shape " shown in Fig. 2 d.If desire to make this hole shape pattern to expose fully, its exposure parameter is that hole shape is made window 32 (hole window) among Fig. 3.In like manner, if desiring to make this hole shape pattern to expose fully is revealed on the photoresist, exposure parameter must be to transfer to this hole shape to make in the window 32.
Suppose that there is a photomask the present, as shown in Figure 4, be one the photomask A40 of island shape pattern and hole shape pattern to be arranged simultaneously, this moment unique manufacturing window that this photomask A40 is exposed fully, just only remaining island shape is made the staggered window 33 that window 31 and hole shape are made 32 of windows.
In theory, as long as there is a window to exist, just program parameter can be adjusted in this window to finish exposure process.Yet in fact, since the unevenness of wafer itself, the character of photoresist bottom, the randomness slightly of exposure machine itself, be contracted to as this staggered window 33 hour in case make window, in fact often expensive energy and time could transfer to technological parameter one desirable numerical value.Therefore, for the photomask that this kind has island shape pattern and hole shape pattern simultaneously, a kind of method that can increase the manufacturing window is that industrial quarters is required.
The object of the present invention is to provide a kind of method that can increase the manufacturing window.
Another object of the present invention provides a kind of method for programming that utilizes the manufacturing window realization mask-type ROM of increase.
The present invention be the principle of utilizing (A or B) and (A or B ')=A (B '=1-B), shilling B and B ' are one " 0 ", " 1 " is staggered, very average procedure code, so through with the A procedure code mutually or afterwards, just can obtain two groups of also very uniform procedure codes.Then get again these two groups of procedure codes with, and must return the A procedure code.
So for realizing the present invention, at first with the A procedure code of a mask A, translate with a B that sign indicating number is got or after obtain a c program sign indicating number.The inversion code B ' (inversion code) that again this A procedure code and this B is translated sign indicating number gets or and obtains the D procedure code.Wherein the B commentaries on classics is decoded as one " 1 ", the procedure code that " 0 " is staggered.Then make C mask and D mask respectively, utilize C mask and D mask to double expose respectively, and obtain and the independent identical result of A mask that uses with this c program sign indicating number and D procedure code.
In addition, the present invention gets a wafer after also being provided at the above-mentioned C of making mask and D mask, utilizes C mask and D mask to make the method for programming of a kind of mask-type ROM of double exposing respectively.Described wafer is finished the memory cell of the mask-type ROM that deposits data on it in advance.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below.
Fig. 1 is a resist exposure schematic diagram;
Fig. 2 a is an island shape photomask;
Fig. 2 b is a hole shape photomask;
Fig. 2 c is the island shape photoresist of gained after the shape photomask photoetching of island;
Fig. 2 d is the hole shape photoresist of gained after the shape photomask photoetching of hole;
Manufacturing window when Fig. 3 is exposure;
Fig. 4 one has the A photomask of island shape pattern and hole shape pattern simultaneously;
Fig. 5 is the integrated circuit diagram of a read only memory ROM;
Fig. 6 is the C photomask of A photomask and B photomask or back gained;
Fig. 7 is the D photomask of A photomask and B ' photomask or back gained.
Photoresist is divided into two kinds on positive and negative film basically, and its basic principle then is identical, for convenience of description for the purpose of, below all be example with the positive.
As shown in Figure 5, be the integrated circuit diagram of a read only memory ROM, the part of its memory is made up of a bit line 51 (bit lines) and a word line 52 (Word lines) in a row basically.The method that data is deposited in this read-only memory is very direct, the memory cell of each address, and just the staggered place of this word line and this bit line be made into a N-MOS, so its initial readout is " 1 ".When will when the memory cell that a certain address is deposited be gone into " 0 ", only needing to inject the boron ion and will distinguish electrically neutralizing of script, make it and can not be switched on, just can make the value of the memory cell of this address be " 0 ".Ion implanted region 53 as shown in Figure 5.This district is owing to inject the boron ion, and therefore following value on address (1,3) will be " 0 ", and other then are " 1 ".In other words, when the value of depositing of input read-only memory, the essential photomask of making is gone up perforate at address (1,3), and other positions is covered, and makes the boron ion only be injected into the specific region.
When a procedure code A is
00001111
01001011
00001111
00001111
The time, the shape of its mask (mask) will be as shown in Figure 4, and wherein procedure code is located for " 0 ",, removes so that its corresponding photoresist is exposed the back for not having pattern as 41 places, and the boron ion can be injected into and neutralize electrically, be to obtain one " 0 " signal.Otherwise, be " 1 " as procedure code, then need keep photoresist, be on photomask, to have pattern, as 42 places.
The present gets one and translates yard B and be: its inversion code B ' is:
10101010 01010101
01010101 10101010
10101010 01010101
01010101 10101010
Make procedure code C=(A or B), then C is:
10101111
01011111
10101111
01011111
By the photomask C60 of this procedure code C gained as shown in Figure 6.
Make D=(A or B '), then D is:
01011111
11101101
01011111
10101111
By the photomask D70 of this procedure code D gained as shown in Figure 7.
By among Fig. 6 and Fig. 7 as seen, originally at this photomask A40 shown in Fig. 4, be converted into very average this photomask C60 of two picture group cases and this photomask D70.Among this photomask C60 and this photomask D70,, therefore on exposure parameter, just can obtain this hole shape exposure window 32 among Fig. 3 owing to all have only hole shape pattern.Because the employed window 33 of should staggeredly making of original this photomask A40 is that this hole shape exposure window 32 is made window 31 gained with this island shape of collection, so this hole shape exposure window 32 is inevitable more than or equal to this staggered window 33 of making.So purpose of the present invention is reached, last person then is to be that proof can obtain initial value by this photomask C60 and this photomask D70, this photomask A40 just, and this proof procedure is as follows:
To C=(A or B) D=(A or B ') B '=1-B
C and D=(A or B) and (A or B ')
=[A and (A or B ')] or [B and (A or B ')]
=AA or AB ' or AB or BB '
=A or AB ' or AB
=A (1 or B ' or B)
=A(1)
=A
Therefore, provable this photomask C60 and this photomask D70 with can return identical result with this photomask A40.If this photomask of Direct observation C60 and this photomask D70, can find if use this two photomask to double expose respectively, can be by the sum total of the part that light shone, A40 is identical with this photomask, so the effect of this photomask C60 and this photomask D70 addition is equal to photomask A40.
So, being fabricated to of a kind of mask-type ROM sequencing: at first at random a procedure code A is converted to procedure code C and procedure code D respectively through translating yard B and B ', translate yard B to be characterized as it be " 0 ", the procedure code that " 1 " is staggered.Then, utilize this procedure code C and this procedure code D to make a photomask C and a photomask D respectively.Then, photoresist is coated on the wafer, is finished the mask-type ROM (Mask ROM) that deposits data on this wafer in advance, with photoresist through soft roasting step to be fixed on the wafer.Get this photomask C and carry out the exposure first time, get this photomask D again and carry out the exposure second time, then develop and ion implantation technology, so just finish the work that this procedure code A is at random deposited in this mask-type ROM.
Another embodiment of the present invention is: at first at random a procedure code A is converted to procedure code C and procedure code D respectively through translating yard B and B '.Translate yard B to be characterized as it be " 0 ", the procedure code that " 1 " is staggered.Then, utilize this procedure code C and this procedure code D to make a photomask C and a photomask D respectively.Then, photoresist is coated on the wafer, finished the mask-type ROM (Mask ROM) that deposits data on this wafer in advance.With photoresist through soft roasting step to be fixed on the wafer.Get this photomask C and carry out the exposure first time, carry out video picture and ion implantation technology thereupon.Then, carry out the photoetching process second time with this photomask D again, to carry out the ion implantation technology second time.So just finish the work that this procedure code A is at random deposited in this mask-type ROM.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to qualification the present invention, those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention should be as the criterion with claims institute confining spectrum.
Claims (14)
1. one kind increases the method for making window, and this method comprises following steps:
(1) gets an A mask;
(2) figure with this A mask transfers a procedure code A to;
(3) establish one and translate a yard B, this is translated yard B and is " 0 ", the procedure code that " 1 " is staggered;
(4) this procedure code A and this are translated a yard B, get mutually or, and obtain a procedure code C;
(5) this procedure code A and this are translated the inversion code B ' (inversion code) of yard B, get mutually or, and obtain procedure code D;
(6) produce a C mask according to this procedure code C;
(7) produce a D mask according to this procedure code D;
(8) utilize this C mask and this D mask with, obtain and the identical exposure result of this A mask of use separately;
Thus, utilize above-mentioned steps, obtained this average C mask of two picture group cases and this D mask, make window to increase.
2. the method for window is made in increase as claimed in claim 1, wherein:
This A mask is one the random mask of island shape pattern and hole shape pattern to be arranged simultaneously.
3. the method for window is made in increase as claimed in claim 1, wherein:
This translates yard B:
01010101…；
10101010…；
：；
：。
4. the method for window is made in increase as claimed in claim 1, wherein:
This translates yard B:
10101010…；
01010101…；
：；
：。
5. the method for window is made in increase as claimed in claim 1, wherein:
This C mask is a photomask based on hole shape pattern.
6. the method for window is made in increase as claimed in claim 1, wherein:
This D mask is a photomask based on hole shape pattern.
7. the method for programming of a mask-type ROM, the method includes the steps of:
(1) gets at random a procedure code A;
(2) establish one and translate a yard B, this is translated yard B and is " 0 ", the procedure code that " 1 " is staggered;
(3) this procedure code A and this are translated a yard B, get mutually or, and obtain a procedure code C;
(4) this procedure code A and this are translated the inversion code B ' (inversion code) of yard B, get mutually or, and obtain procedure code D;
(5) produce a C mask according to this procedure code C;
(6) produce a D mask according to this procedure code D;
(7) get a wafer, finish the memory cell of the mask-type ROM (MaskROM) that deposits data on this wafer in advance;
(8) get this photomask C and this photomask D, develop and ion implantation technology to double expose, so just finish the work that this procedure code A is at random deposited in this mask-type ROM.
8. the method for programming of mask-type ROM as claimed in claim 7, wherein:
This A mask is one the random mask of island shape pattern and hole shape pattern to be arranged simultaneously.
9. the method for programming of mask-type ROM as claimed in claim 7, wherein:
This translates yard B:
01010101…；
10101010…；
：；
：。
10. the method for programming of mask-type ROM as claimed in claim 7, wherein:
This translates yard B:
10101010…；
01010101…；
：；
：。
11. the method for programming of mask-type ROM as claimed in claim 7, wherein:
This C mask is a photomask based on hole shape pattern.
12. the method for programming of mask-type ROM as claimed in claim 7, wherein:
This D mask is a photomask based on hole shape pattern.
13. the method for programming of mask-type ROM as claimed in claim 7, wherein step (8) is:
A. on this wafer, apply a photoresist cover;
B. get this photomask C and carry out the exposure first time;
C. get this photomask D and carry out the exposure second time;
D. this photoresist layer on this wafer is carried out video picture technology;
E. carry out ion implantation technology.
14. the method for programming of mask-type ROM as claimed in claim 7, wherein step (8) further comprises the steps:
F. on this wafer, apply one first photoresist layer;
G. get this photomask C and carry out the exposure first time;
H. this first photoresist layer on this wafer is carried out the video picture first time and ion implantation technology for the first time;
I. this first photoresist layer of flush away;
J. on this wafer, apply second photoresist layer;
K. get this photomask D and carry out the exposure second time;
L. this second photoresist layer on this wafer is carried out the video picture second time and ion implantation technology for the second time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN99118196.4A CN1129079C (en) | 1999-08-30 | 1999-08-30 | Programming method for mask-type ROM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN99118196.4A CN1129079C (en) | 1999-08-30 | 1999-08-30 | Programming method for mask-type ROM |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1286494A true CN1286494A (en) | 2001-03-07 |
| CN1129079C CN1129079C (en) | 2003-11-26 |
Family
ID=5280364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99118196.4A Expired - Fee Related CN1129079C (en) | 1999-08-30 | 1999-08-30 | Programming method for mask-type ROM |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1129079C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661797B (en) * | 2006-09-20 | 2013-06-12 | 旺宏电子股份有限公司 | Manufacturing method of nonvolatile memory, writing method and reading method thereof |
| CN111273524A (en) * | 2020-02-19 | 2020-06-12 | 联合微电子中心有限责任公司 | Process method for realizing accurate alignment |
-
1999
- 1999-08-30 CN CN99118196.4A patent/CN1129079C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661797B (en) * | 2006-09-20 | 2013-06-12 | 旺宏电子股份有限公司 | Manufacturing method of nonvolatile memory, writing method and reading method thereof |
| CN111273524A (en) * | 2020-02-19 | 2020-06-12 | 联合微电子中心有限责任公司 | Process method for realizing accurate alignment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1129079C (en) | 2003-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1088525C (en) | Pohto mask and method for manufacturing the same | |
| CN1101057C (en) | Photo-mask used in aligner for exactly transferring main pattern assisted by semi-transparent auxiliary pattern and process of fabrication thereof | |
| US5563012A (en) | Multi mask method for selective mask feature enhancement | |
| Thompson | An introduction to lithography | |
| CN1115876A (en) | Method of optical lithography using phase shift masking | |
| CN1924706A (en) | Method for photolithography in semiconductor manufacturing | |
| KR20020033040A (en) | Method of manufacturing a semiconductor device | |
| CN1303475C (en) | Optical mask with illuminance polarization control | |
| CN1129079C (en) | Programming method for mask-type ROM | |
| CN1818791A (en) | System and method for photolithography in semiconductor manufacturing and light shield for same | |
| JP2002365783A (en) | Apparatus of forming mask pattern, apparatus and method of manufacturing high-resolution mask as well as method of forming resist pattern | |
| US5439765A (en) | Photomask for semiconductor integrated circuit device | |
| JP2000019708A5 (en) | ||
| CN1405634A (en) | Mask-pattern correction method | |
| CN1472776A (en) | Optical masks, manufacture thereof and manufacture of electronic elements | |
| CN1258695C (en) | Correction for optical proximity effect of contact hole, mask and semiconductor device manufacturing method | |
| CN1193127A (en) | Mask including transmission-rate-variable shade layer | |
| CN1841387A (en) | Pattern data creation method, semi-conductor device manufacturing method and computer-readable medium | |
| CN1240125C (en) | Manufacture of integrated circuit array structure | |
| CN1354494A (en) | Photoetching making method capable of reducing kindred effect | |
| CN2777600Y (en) | Chromium-free film layer phase shift light shade | |
| CN1519647A (en) | Light mask, mfg. method of electronic device and mfg. method of light mask | |
| CN100334716C (en) | Method of programming coding of read-only memory devices and read-only memory formed thereby | |
| CN1212548C (en) | Method of forming isolated line using multiple exposure | |
| CN1230717C (en) | Photographic corrosion mfg method for mixing type photo mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |