CN1277318C - P type window layer in use for solar cell of silicon thin film, and preparation method - Google Patents
P type window layer in use for solar cell of silicon thin film, and preparation method Download PDFInfo
- Publication number
- CN1277318C CN1277318C CNB2005100138629A CN200510013862A CN1277318C CN 1277318 C CN1277318 C CN 1277318C CN B2005100138629 A CNB2005100138629 A CN B2005100138629A CN 200510013862 A CN200510013862 A CN 200510013862A CN 1277318 C CN1277318 C CN 1277318C
- Authority
- CN
- China
- Prior art keywords
- layer
- film
- window layer
- solar cell
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100138629A CN1277318C (en) | 2005-06-20 | 2005-06-20 | P type window layer in use for solar cell of silicon thin film, and preparation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100138629A CN1277318C (en) | 2005-06-20 | 2005-06-20 | P type window layer in use for solar cell of silicon thin film, and preparation method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1697201A CN1697201A (en) | 2005-11-16 |
CN1277318C true CN1277318C (en) | 2006-09-27 |
Family
ID=35349801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100138629A Active CN1277318C (en) | 2005-06-20 | 2005-06-20 | P type window layer in use for solar cell of silicon thin film, and preparation method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1277318C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101471387B (en) * | 2007-12-27 | 2012-07-11 | 财团法人工业技术研究院 | P-type doping layer of photoelectric conversion element and method of manufacturing the same |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007033444A1 (en) * | 2007-07-18 | 2009-01-29 | Schott Solar Gmbh | Silicon multiple solar cell and process for its production |
CN101159297B (en) * | 2007-11-19 | 2011-05-04 | 南开大学 | Preparation method of transparency conductive film for micro crystal silicon thin film solar battery taking SnO2 as substrate |
CN101794828B (en) * | 2010-03-12 | 2012-05-16 | 河南阿格斯新能源有限公司 | Film system of thin-film solar cell, thin-film solar cell and manufacturing method thereof |
CN102082188A (en) * | 2010-10-27 | 2011-06-01 | 新奥光伏能源有限公司 | Solar cell window layer material and preparation method and application thereof |
CN102456761A (en) * | 2010-11-02 | 2012-05-16 | 方靖淮 | Film solar cell |
CN102496647A (en) * | 2011-12-28 | 2012-06-13 | 营口联创太阳能科技有限公司 | Amorphous silicon film cell additionally equipped with electrode modification layer and manufacturing method thereof |
CN104393120B (en) * | 2014-10-20 | 2017-01-18 | 上海空间电源研究所 | Preparation method and purpose of top cell P type layer of amorphous silicon germanium thin-film solar cell |
CN112542548B (en) * | 2020-12-08 | 2023-10-20 | 云南师范大学 | Thin film crystalline silicon perovskite heterojunction solar cell and preparation method thereof |
-
2005
- 2005-06-20 CN CNB2005100138629A patent/CN1277318C/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101471387B (en) * | 2007-12-27 | 2012-07-11 | 财团法人工业技术研究院 | P-type doping layer of photoelectric conversion element and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
CN1697201A (en) | 2005-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1277318C (en) | P type window layer in use for solar cell of silicon thin film, and preparation method | |
US8648251B2 (en) | Tandem thin-film silicon solar cell and method for manufacturing the same | |
EP2109155A2 (en) | Thin film silicon solar cell and manufacturing method thereof | |
CN101556971B (en) | Back reflector for silicon-based thin film solar cell and preparation method thereof | |
EP1939947A1 (en) | Silicon-based thin-film photoelectric converter and method of manufacturing the same | |
CN1866546A (en) | Solar cell and preparing method thereof | |
CN102341919B (en) | Solar cell | |
CN102208477B (en) | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof | |
CN102656707B (en) | Thin-film silicon tandem solar cell and method for manufacturing the same | |
CN1287471C (en) | Silicon-film solar-cell integrated assembly and preparing technology | |
CN101510566B (en) | Wide bandgap N type nanometer silicon material for silicon film solar battery and preparation method | |
CN100546050C (en) | Window material for silicon based thin film solar battery and preparation method thereof | |
CN101556972B (en) | Film intrinsic layer based on hydrogenated silicon, film solar cell and manufacturing method | |
CN102255005B (en) | Thin film solar cell and manufacturing method thereof | |
CN102157617B (en) | Preparation method of silicon-based nano-wire solar cell | |
CN102983215A (en) | Method for preparing silicon thin-film solar cells with silicon nano-wire structures | |
CN106711288B (en) | A kind of preparation method of Nano silicon-crystal thin film solar cell | |
CN102916060B (en) | Silicon-based thin-film solar cell and preparation method thereof | |
CN101159296B (en) | Method for preparing improved single chamber deposition intrinsic micro crystal silicon thin film | |
CN103238219A (en) | Improved alpha-Si:H absorber layer for alpha-Si single- and multijunction thin film silicon solar cell | |
CN101414650B (en) | Method for preparing nanocrystalline/amorphous silicon two-phase film solar battery | |
CN103280466A (en) | High-reflection and high-velvet-degree back electrode based on AlOx/Ag/ZnO structure | |
WO2012089685A2 (en) | Siox n-layer for microcrystalline pin junction | |
CN101159297B (en) | Preparation method of transparency conductive film for micro crystal silicon thin film solar battery taking SnO2 as substrate | |
JP2012500483A (en) | Photocell and method for producing photovoltaic cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090206 Address after: Jiangnan hi tech Zone, South Ring Road, Licheng District, Quanzhou, Fujian Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: Tianjin City, Wei Jin Road No. 94 Patentee before: Nankai University |
|
ASS | Succession or assignment of patent right |
Owner name: FUJIAN JUNSHI ENERGY CO., LTD. Free format text: FORMER OWNER: NANKAI UNIV. Effective date: 20090206 |
|
ASS | Succession or assignment of patent right |
Owner name: FUJIAN BOYANG PRECISION EQUIPMENT CO., LTD. Free format text: FORMER OWNER: FUJIAN JUNSHI ENERGY CO., LTD. Effective date: 20100312 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 362000 JIANGNAN HIGH-TECH INDUSTRIAL PARK ZONE, SOUTH RING ROAD, LICHENG DISTRICT, QUANZHOU CITY, FUJIAN PROVINCE TO: 362000 JIANGNAN HIGH-TECH PARK ZONE (INSIDE OF JINTAIYANG PARK), SOUTH RING ROAD, LICHENG DISTRICT, QUANZHOU CITY |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100312 Address after: 362000 Quanzhou city Licheng District Jiangnan Hi-Tech Park (Sun Park) Patentee after: Apollo Precision (Fujian) Limited Address before: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee before: Fujian Golden Sun Solar Technic Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: QUANZHOU ZHONGJINHUI ENERGY TECH CO., LTD. Free format text: FORMER OWNER: FUJIAN APOLLO PRECISION EQUIPMENT CO., LTD. Effective date: 20100701 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 362000 (LOCATED WITHIN THE JINTAIYANG PARK), JIANGNAN HIGH + NEW TECHNOLOGYINDUSTRIAL PARK, NANHUAN ROAD, LICHENG DISTRICT, QUANZHOU CITY TO: 362000 GOLDEN SUN COMPANY EW+HIGH TECHNOLOGY ELECTRONIC INFORMATION PARK IANGNAN RING ROAD SOUTH ICHENG DISTRICT UANZHOU CITY UJIAN PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100701 Address after: Licheng District of Quanzhou City, Fujian Province, South Loop 362000 Jiangnan high tech electronic information Park (golden sun company) Patentee after: Quanzhou Jinhui Energy Technology Co., Ltd. Address before: 362000 Quanzhou city Licheng District Jiangnan Hi-Tech Park (Sun Park) Patentee before: Apollo Precision (Fujian) Limited |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20051116 Assignee: GS-Solar (Beijing) Company Limited Assignor: Quanzhou Jinhui Energy Technology Co., Ltd. Contract record no.: 2012350000165 Denomination of invention: P type window layer in use for solar cell of silicon thin film, and preparation method Granted publication date: 20060927 License type: Exclusive License Record date: 20121205 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160912 Address after: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: Licheng District of Quanzhou City, Fujian Province, South Loop 362000 Jiangnan high tech electronic information Park (golden sun company) Patentee before: Quanzhou Jinhui Energy Technology Co., Ltd. |