CN1277318C - P type window layer in use for solar cell of silicon thin film, and preparation method - Google Patents
P type window layer in use for solar cell of silicon thin film, and preparation method Download PDFInfo
- Publication number
- CN1277318C CN1277318C CNB2005100138629A CN200510013862A CN1277318C CN 1277318 C CN1277318 C CN 1277318C CN B2005100138629 A CNB2005100138629 A CN B2005100138629A CN 200510013862 A CN200510013862 A CN 200510013862A CN 1277318 C CN1277318 C CN 1277318C
- Authority
- CN
- China
- Prior art keywords
- layer
- film
- window layer
- solar cell
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 5
- 230000001105 regulatory effect Effects 0.000 claims abstract description 3
- 238000002425 crystallisation Methods 0.000 claims description 33
- 230000008025 crystallization Effects 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 29
- 239000013081 microcrystal Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910000085 borane Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 6
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims description 4
- 238000013459 approach Methods 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000002349 favourable effect Effects 0.000 abstract 2
- 230000001276 controlling effect Effects 0.000 abstract 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 13
- 230000005611 electricity Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000004936 stimulating effect Effects 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012297 crystallization seed Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a window layer of a silicon film solar cell, particularly to the structure and preparation technology of a p-shaped window layer, which belongs to the technical field of film solar cells as new energy resources. The p-shaped window layer of a silicon film solar cell is composed of a transparent substrate, a transparent conductive film, a p-shaped window layer, etc. The present invention is characterized in that a P layer is divided into two layers P1 and P2, wherein the P1 layer is a nano-silicon film with a high crystallizing ratio and a wide band gap, and the thickness of the P1 layer is thinner than that of the P2 layer by an order of magnitude. A double-layer p-shaped doping layer structure is adopted when the p-shaped window layer is designed. The effects of crystallizing and doping can be respectively completed by regulating and controlling the crystallizing ratio, the doping density and the thickness of the double layers for eventually and consistently achieving the effect of simultaneously satisfying high conductivity and high crystallizing ratios. Therefore, the present invention provides a favorable crystallizing basis for the succedent growth of crystallite silicon active layers and also provides high open-circuit voltage and low series resistance by high-conductivity p-shaped doping, and accordingly, the present invention improves the efficiency of cells on the basis of ensuring stability, which is favorable for presenting the advantage of low cost of film cells.
Description
Technical field
The present invention relates to the Window layer of silicon-based thin film solar cell, the particularly structure of p type Window layer and technology of preparing belong to the technical field of thin film solar cell in the new forms of energy.
Background technology
The energy is the power that country can develop.Be tending towards the exhausted epoch day by day in fossil energy, the research of the novel alternative energy will be the sign that can make the guarantee of national sustained economic development and show national power.The present invention relates to a kind of new construction and corresponding technology of preparing of use for solar cell of silicon thin film p type Window layer, can improve the photoelectric conversion efficiency and the stability of battery simultaneously, reduce cost, belong to the technical field of thin film solar cell in the new forms of energy.
The advantage of amorphous silicon film solar battery is that cost is low because its manufacturing process simple, economize material, be convenient to the large tracts of land serialization and produce.But amorphous silicon film solar battery inefficient and the stability problem that causes because of photic attenuating effect have offseted silicon-base thin-film battery advantage cheaply again to a great extent.Adopt very high frequency(VHF) plasma reinforced chemical vapour deposition (VHF-PECVD, stimulating frequency 13.56-100MHz) or radio frequency high tension plasma reinforced chemical vapour deposition (RFHP-PECVD, stimulating frequency 13.56MHz, more than the air pressure 0.5Torr) technology prepares microcrystalline silicon film, and the microcrystalline silicon solar cell of preparation thus can eliminate the problem of photic decline on the principle substantially, can expand the photoelectric conversion efficiency that the long wave response of solar spectrum is improved battery simultaneously.
In p-i-n type microcrystalline silicon solar cell, the P layer has material impact as the Window layer of battery to battery performance.P type a-SiC:H is widely used in p-i-n type amorphous silicon film solar battery as window material.Its optical band gap maximum can reach～2.geV, but its conductivity (σ) generally has only 10
-6S/cm is than low 3-5 the order of magnitude of microcrystal silicon p layer.Therefore, for microcrystalline silicon solar cell, P type a-SiC:H is as battery window layer material, and optical band gap can meet the demands, but will can not be ignored the internal resistance of cell and the stable influence that brings, thereby limit the application of P type a-SiC:H in microcrystalline silicon solar cell.
Adopt the PECVD technology, by highly diluted silane (SC=[SiH
4]/([SiH
4]+[H
2])≤1%, high deposition power (〉=0.76W/cm
2) can obtain p type nano film material.This technology has use value to amorphous silicon film solar battery very much, and in microcrystalline silicon solar cell, required p layer material thickness has only 20-30nm.Thereby such nano material is difficult to obtain the needed crystallization rate of crystallite battery, this be because subsequently the deposition active area---intrinsic micro crystal silicon will be grown on p type window material.If the p material crystallization rate of being grown is not high, the intrinsic micro crystal silicon of growth thereon then, the crystallization rate of initial hatching layer also is affected.This will directly influence the p/i interfacial characteristics of battery, and this interfacial characteristics is the key that influences the microcrystalline silicon solar cell performance; Also can have a strong impact on the material structure and the photoelectric characteristic of active area simultaneously, and microcrystal silicon active layer is obtain efficient, high stable microcrystal silicon battery basic.So we say, P type Window layer is efficient concerning preparing, the high stable silicon-film solar-cell, have very important effect.And we seldom see and can satisfy the technology of preparing that window features does not influence the P type Window layer of microcrystal silicon active layer characteristic again simultaneously in the report of microcrystal silicon battery so far.
Summary of the invention
Goal of the invention prepares the p type Window layer of high crystallization rate, high conductivity, is that preparation is efficient, one of the key technology of low-cost microcrystalline silicon solar cell.The objective of the invention is to propose a kind of structure and technology of preparing for preparing the use for solar cell of silicon thin film p type Window layer of high crystallization rate, high conductivity, in the hope of photoelectric conversion efficiency and the stability that improves solar cell simultaneously, really reach and further reduce manufacturing cost.
Technical scheme of the present invention: use for solar cell of silicon thin film p type Window layer, by transparent substrates G, transparent conductive film T, p type Window layer P, intrinsic active area I, N
+District N, back electrode M form, and its characteristics are: the P layer is divided into P
1And P
2Two-layer, P
1Layer is the film with high crystallization rate broad-band gap nano-silicon, and thickness compares P
2Layer will approach an order of magnitude; P
2Layer is that thickness is the broad-band gap p type microcrystal silicon material of the high conductivity of 10nm-40nm.
Thin film solar cell comprises 3 steps with the preparation method of p type Window layer.
The invention has the beneficial effects as follows: by the structure (double-deck geometry, crystallization structure) of control p type Window layer and shifting gears of regulation and control dopant, reach the high crystallization rate of Window layer, high electricity is led, and satisfies the requirement of microcrystalline silicon film battery Window layer fully.Intrinsic micro crystal silicon active layer has subsequently been established good crystallization basis, and the crystallization degree and the characteristic of convenient modulation intrinsic layer help improving battery efficiency.Simultaneously, because the influence to stability of having avoided conventional carbon to mix and import can guarantee to reach and not only improve the photoelectric conversion efficiency of battery but also ensure stable dual purpose.Thereby can really show hull cell advantage cheaply.
Description of drawings
Fig. 1: general microcrystalline silicon solar cell structural representation
Fig. 2: the microcrystalline silicon solar cell structural representation of the present invention that has two-layer p Window layer
G among the figure: transparent substrates T: transparent conductive film P:p type Window layer P
1: the 1st layer of p layer P
2: the 2nd layer of p layer I: intrinsic active area N:N
+District M: back electrode
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail: adopt silicon-film solar-cell of the present invention, by transparent substrates G, transparent conductive film T, p type Window layer P, intrinsic active area I, N
+District N, back electrode M form, and its characteristics are: the P layer is divided into P
1And P
2Two-layer, P
1Layer is the film with high crystallization rate broad-band gap nano-silicon, and thickness compares P
2Layer will approach an order of magnitude; P
2Layer is that thickness is the broad-band gap p type microcrystal silicon material of the high conductivity of 10nm-40nm.
The thin film solar cell preparation method of p type Window layer, it comprises 3 steps of subordinate:
1) the glass substrate G that will have a T is placed in the vacuum chamber, and base vacuum is lower than 10
-3Holder;
2) adopt plasma reinforced chemical vapour deposition (PECVD) method deposition P
1And P
2Film, used aura driving frequency is: 13.56MHz-100MGz;
3) feeding reacting gas to reative cell is: silane, hydrogen, borine or trimethyl borine, P
1And P
2Film reactive deposition parameter is as follows:
More than 0.1 holder (Torr) of reacting gas pressure;
Glow power density; 40 milliwatts (mW)-500 milliwatts (mW);
Substrate surface temperature: 100-260 ℃;
Hydrogen diluted silane concentration SC=([SiH
4]/([SiH
4]+[H
2])) %≤5%;
The ratio (boron dope agent concentration) of boron-containing gas and silane: BS≤3%.
By regulating boron dope agent concentration, make P
2The BS of layer compares P
1Layer want a high order of magnitude and more than.
The present invention adopts the PECVD technology of different frequency to prepare the p type Window layer of high crystallization rate, high conductivity.Employed reactant gas source is: based on the silane based gas of hydrogen dilution, the liquefied compound of the boracic that carries with organic class gas of different boracics or with inert gas is as dopant.Employed substrate is to be coated with transparent conductive film T (as ZnO, SnO
2, SnO
2/ ZnO composite membrane etc.) thick 0.5 millimeter-8 millimeters (mm) glass substrate G.Back electrode is combined by metal materials such as Ag, Al, ZnO and ZnO.
The structure of the p type Window layer that high crystallization rate of the present invention, high electricity are led is to adopt double-deck p type structure.These two p layers have the multiple spot difference.
The preparation technology of the p type Window layer that high crystallization rate of the present invention, high electricity are led is: control this two-layer crystallization rate, doping content is different with thickness.
P near substrate
1Have high crystallization rate, be higher than the crystallization rate of the second layer subsequently.
P
1The doping content of layer is less than P
2The layer doping content, differ several times and more than.
P
1The thickness of layer is much smaller than P
2The layer thickness, differ about order of magnitude and more than.
The method of this change dopant is different with the conventional method of using.Conventional thinking is to mix to the influence of follow-up intrinsic layer for fear of boron, and what adopt usually is progressively to reduce boron doped method.And our concentration of dopant increases than ground floor at the second layer.This is our characteristics place just.
The preparation method that we are new is P
1Layer is by coordinated regulation hydrogen dilution rate and deposition pressure etc., and the reduction dopant, reaches suitable high conductivity under the high crystallization rate.At P
2Layer, at very high crystallization rate but very thin P
1Do to use than P on the basis of initial crystallization layer
1The dopant that layer is much higher is to reach the purpose that improves conductivity.Like this can be under the prerequisite of high crystallization initial layers, suppress boron to reducing the effect of crystallization rate, can guarantee that still whole Window layer has high crystallization rate under the prerequisite that high electricity is led, and the basis of good crystallization seed crystal is provided for follow-up intrinsic layer.Help attenuate or eliminate the initial amorphous silicon hatching layer that the microcrystal silicon active layer early growth period can occur usually, need not the influence of considering that the p layer brings so substantially, thereby help improving the p/i interface.The result improves battery fill factor, curve factor and electric current, and open circuit voltage, and then battery efficiency can comprehensively improve.
We are thin at two-layer p layer, the ingenious part in the thick control, then are with conductance ratio P
2The P that layer is low
1It is very thin that layer is done, and can not introduce series resistance so substantially.
We adopt double-deck purpose, are to use different layers to reach high crystallization and lead different purposes with high electricity.That is to say, utilize P
1When layer reaches raising self crystallization rate, to ensure that also can there be enough crystallization prerequisites in lower floor.P
2Layer is at P
1Layer provides under the high crystallization rate prerequisite, suppresses the effect that boron reduces crystallization rate, has guaranteed high crystallization rate and conductivity.
In a word, the characteristics of our new method are off the beaten track preparation mistaken ideas, utilize basic physical concept and good coupling technology of preparing, reach that p floor height electricity is led, the Window layer purpose of high crystallization rate.
Embodiment 1
On the Coming7059 glass substrate, adopt silane, hydrogen, borine as reaction source gas, by the VHF-PECVD method, the aura stimulating frequency is 60MHz, select deposition process parameters according to step included among the preparation method of this patent thin film solar cell with p type Window layer, preparation microcrystal silicon p layer material is under the precondition of 20-30nm at thickness, and its electricity is led can be 10
-1On the magnitude of s/cm, crystallization rate reaches 40%-50%.
Embodiment 2
On the glass substrate that is covered with the ZnO transparent conductive film, adopt silane, hydrogen, borine and phosphine as reaction source gas, by the VHF-PECVD method, the aura stimulating frequency is 60MHz, select deposition process parameters according to step included among the preparation method of this patent thin film solar cell with p type Window layer, step shown in the by specification accompanying drawing 2, preparation p type Window layer and microcrystalline silicon solar cell.In cell area is under 0.253 square centimeter of situation, and prepared unijunction pin type microcrystalline silicon solar cell efficient reaches 9.2%, and (when carrying out the J-V test, used light intensity is AM1.5,100mW/cm
2).
Claims (2)
1. use for solar cell of silicon thin film p type Window layer, it is by transparent substrates (G), transparent conductive film (T), p type Window layer (P), intrinsic active area (I), N
+Layer of material in the solar cell that district (N), back electrode (M) are formed, it is characterized in that: P type Window layer is divided into P
1And P
2Two-layer, P
1Layer is the film with high crystallization rate broad-band gap nano-silicon, and thickness compares P
2Layer will approach an order of magnitude; P
2Layer is that thickness is the broad-band gap p type microcrystal silicon material of the high conductivity of 10nm-40nm; P
1Layer is adjacent with transparent conductive film (T), P
2Layer is adjacent with intrinsic active area (I), then is N
+District (N) district, back electrode (M).
2. the preparation method of a use for solar cell of silicon thin film p type Window layer is characterized in that it comprises the steps:
1) the transparent substrates G that will have a transparent conductive film (T) is placed in the vacuum chamber, and base vacuum is lower than 10
-3Holder;
2) adopt the plasma reinforced chemical vapour deposition method on the T layer, to deposit P
1, deposit P afterwards again
2Film, used aura driving frequency is: 13.56MHz-100MHz;
3) feeding reacting gas to reative cell is: silane, hydrogen, borine, trimethyl borine, P
1And P
2Film reactive deposition parameter is as follows:
More than 0.1 holder of reacting gas pressure;
Glow power density: 40 milliwatts-500 milliwatt;
Substrate surface temperature: 100-260 ℃;
The boron dope agent concentration of boron-containing gas and the ratio of silane: BS≤3%;
4) by regulating boron dope agent concentration, make P
2The BS of film compares P
1Wanting of film is high one more than the order of magnitude;
5) P
1Film is the film with high crystallization rate broad-band gap nano-silicon, and thickness compares P
2Film will approach an order of magnitude; P
2Film is that thickness is the broad-band gap p type microcrystal silicon material of the high conductivity of 10nm-40nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100138629A CN1277318C (en) | 2005-06-20 | 2005-06-20 | P type window layer in use for solar cell of silicon thin film, and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100138629A CN1277318C (en) | 2005-06-20 | 2005-06-20 | P type window layer in use for solar cell of silicon thin film, and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1697201A CN1697201A (en) | 2005-11-16 |
| CN1277318C true CN1277318C (en) | 2006-09-27 |
Family
ID=35349801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100138629A Active CN1277318C (en) | 2005-06-20 | 2005-06-20 | P type window layer in use for solar cell of silicon thin film, and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1277318C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101471387B (en) * | 2007-12-27 | 2012-07-11 | 财团法人工业技术研究院 | P-type doping layer of photoelectric conversion element and method of manufacturing the same |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007033444A1 (en) * | 2007-07-18 | 2009-01-29 | Schott Solar Gmbh | Silicon multiple solar cell and process for its production |
| CN101159297B (en) * | 2007-11-19 | 2011-05-04 | 南开大学 | Preparation method of transparency conductive film for micro crystal silicon thin film solar battery taking SnO2 as substrate |
| CN101794828B (en) * | 2010-03-12 | 2012-05-16 | 河南阿格斯新能源有限公司 | Film system of thin-film solar cell, thin-film solar cell and manufacturing method thereof |
| CN102082188A (en) * | 2010-10-27 | 2011-06-01 | 新奥光伏能源有限公司 | Solar cell window layer material and preparation method and application thereof |
| CN102456761A (en) * | 2010-11-02 | 2012-05-16 | 方靖淮 | Film solar cell |
| CN102496647A (en) * | 2011-12-28 | 2012-06-13 | 营口联创太阳能科技有限公司 | Amorphous silicon film cell additionally equipped with electrode modification layer and manufacturing method thereof |
| CN104393120B (en) * | 2014-10-20 | 2017-01-18 | 上海空间电源研究所 | Preparation method and purpose of top cell P type layer of amorphous silicon germanium thin-film solar cell |
| CN112542548B (en) * | 2020-12-08 | 2023-10-20 | 云南师范大学 | Thin film crystalline silicon perovskite heterojunction solar cell and preparation method thereof |
-
2005
- 2005-06-20 CN CNB2005100138629A patent/CN1277318C/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101471387B (en) * | 2007-12-27 | 2012-07-11 | 财团法人工业技术研究院 | P-type doping layer of photoelectric conversion element and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1697201A (en) | 2005-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1277318C (en) | P type window layer in use for solar cell of silicon thin film, and preparation method | |
| US8648251B2 (en) | Tandem thin-film silicon solar cell and method for manufacturing the same | |
| EP2109155A2 (en) | Thin film silicon solar cell and manufacturing method thereof | |
| CN101556971B (en) | Back reflector for silicon-based thin film solar cell and preparation method thereof | |
| CN1866546A (en) | Solar cell and preparing method thereof | |
| CN102341919B (en) | Solar cell | |
| CN102208477B (en) | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof | |
| CN1287471C (en) | Silicon-film solar-cell integrated assembly and preparing technology | |
| CN101510566B (en) | Wide bandgap N type nanometer silicon material for silicon film solar battery and preparation method | |
| CN100546050C (en) | Window material for silicon based thin film solar battery and preparation method thereof | |
| CN101562220B (en) | Process for manufacturing amorphous silicon thin film solar cell | |
| CN101556972B (en) | Film intrinsic layer based on hydrogenated silicon, film solar cell and manufacturing method | |
| CN102255005B (en) | Thin film solar cell and manufacturing method thereof | |
| CN102157617B (en) | Preparation method of silicon-based nano-wire solar cell | |
| CN1851935A (en) | Double-junction solar cell and manufacturing method thereof | |
| CN102983215A (en) | Method for preparing silicon thin-film solar cells with silicon nano-wire structures | |
| CN106711288B (en) | A kind of preparation method of Nano silicon-crystal thin film solar cell | |
| CN101159296B (en) | Method for preparing improved single chamber deposition intrinsic micro crystal silicon thin film | |
| CN103238219A (en) | Improved alpha-Si:H absorber layer for alpha-Si single- and multijunction thin film silicon solar cell | |
| CN101414650B (en) | Method for preparing nanocrystalline/amorphous silicon two-phase film solar battery | |
| CN102916060B (en) | Silicon-based thin-film solar cell and preparation method thereof | |
| CN101159297B (en) | Preparation method of transparency conductive film for micro crystal silicon thin film solar battery taking SnO2 as substrate | |
| CN103280466A (en) | High-reflection and high-velvet-degree back electrode based on AlOx/Ag/ZnO structure | |
| US20130291933A1 (en) | SiOx n-LAYER FOR MICROCRYSTALLINE PIN JUNCTION | |
| JP2012500483A (en) | Photocell and method for producing photovoltaic cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20090206 Address after: Jiangnan hi tech Zone, South Ring Road, Licheng District, Quanzhou, Fujian Patentee after: GS-SOLAR (FU JIAN) Co.,Ltd. Address before: Tianjin City, Wei Jin Road No. 94 Patentee before: Nankai University |
|
| ASS | Succession or assignment of patent right |
Owner name: FUJIAN JUNSHI ENERGY CO., LTD. Free format text: FORMER OWNER: NANKAI UNIV. Effective date: 20090206 |
|
| ASS | Succession or assignment of patent right |
Owner name: FUJIAN BOYANG PRECISION EQUIPMENT CO., LTD. Free format text: FORMER OWNER: FUJIAN JUNSHI ENERGY CO., LTD. Effective date: 20100312 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 362000 JIANGNAN HIGH-TECH INDUSTRIAL PARK ZONE, SOUTH RING ROAD, LICHENG DISTRICT, QUANZHOU CITY, FUJIAN PROVINCE TO: 362000 JIANGNAN HIGH-TECH PARK ZONE (INSIDE OF JINTAIYANG PARK), SOUTH RING ROAD, LICHENG DISTRICT, QUANZHOU CITY |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20100312 Address after: 362000 Quanzhou city Licheng District Jiangnan Hi-Tech Park (Sun Park) Patentee after: APOLLO PRECISION (FUJIAN) Ltd. Address before: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee before: GS-SOLAR (FU JIAN) Co.,Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: QUANZHOU ZHONGJINHUI ENERGY TECH CO., LTD. Free format text: FORMER OWNER: FUJIAN APOLLO PRECISION EQUIPMENT CO., LTD. Effective date: 20100701 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 362000 (LOCATED WITHIN THE JINTAIYANG PARK), JIANGNAN HIGH + NEW TECHNOLOGYINDUSTRIAL PARK, NANHUAN ROAD, LICHENG DISTRICT, QUANZHOU CITY TO: 362000 GOLDEN SUN COMPANY EW+HIGH TECHNOLOGY ELECTRONIC INFORMATION PARK IANGNAN RING ROAD SOUTH ICHENG DISTRICT UANZHOU CITY UJIAN PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20100701 Address after: Licheng District of Quanzhou City, Fujian Province, South Loop 362000 Jiangnan high tech electronic information Park (golden sun company) Patentee after: Quanzhou Jinhui Energy Technology Co.,Ltd. Address before: 362000 Quanzhou city Licheng District Jiangnan Hi-Tech Park (Sun Park) Patentee before: APOLLO PRECISION (FUJIAN) Ltd. |
|
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20051116 Assignee: Beijing Zhongjinyang Electronic Technology Co.,Ltd. Assignor: Quanzhou Jinhui Energy Technology Co.,Ltd. Contract record no.: 2012350000165 Denomination of invention: P type window layer in use for solar cell of silicon thin film, and preparation method Granted publication date: 20060927 License type: Exclusive License Record date: 20121205 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160912 Address after: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee after: GS-SOLAR (FU JIAN) Co.,Ltd. Address before: Licheng District of Quanzhou City, Fujian Province, South Loop 362000 Jiangnan high tech electronic information Park (golden sun company) Patentee before: Quanzhou Jinhui Energy Technology Co.,Ltd. |
|
| PP01 | Preservation of patent right |
Effective date of registration: 20240930 Granted publication date: 20060927 |