CN1273560C - Semiconductive ceramic thick film heating material - Google Patents
Semiconductive ceramic thick film heating material Download PDFInfo
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- CN1273560C CN1273560C CN 03125351 CN03125351A CN1273560C CN 1273560 C CN1273560 C CN 1273560C CN 03125351 CN03125351 CN 03125351 CN 03125351 A CN03125351 A CN 03125351A CN 1273560 C CN1273560 C CN 1273560C
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- 239000000463 material Substances 0.000 title claims abstract description 31
- 239000000919 ceramic Substances 0.000 title claims abstract description 7
- 238000010438 heat treatment Methods 0.000 title abstract description 14
- 239000012071 phase Substances 0.000 claims abstract description 21
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 20
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 15
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 9
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011787 zinc oxide Substances 0.000 claims abstract description 8
- 238000005485 electric heating Methods 0.000 claims abstract description 7
- 229910000416 bismuth oxide Inorganic materials 0.000 claims abstract description 6
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims abstract description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 3
- 239000007790 solid phase Substances 0.000 claims abstract description 3
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract 4
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 229960004643 cupric oxide Drugs 0.000 claims description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 229910052573 porcelain Inorganic materials 0.000 claims description 3
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical group [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000005751 Copper oxide Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- 229910000431 copper oxide Inorganic materials 0.000 abstract 2
- 229910052878 cordierite Inorganic materials 0.000 abstract 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003607 modifier Substances 0.000 abstract 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 abstract 2
- 229910003454 ytterbium oxide Inorganic materials 0.000 abstract 2
- 229940075624 ytterbium oxide Drugs 0.000 abstract 2
- 239000010408 film Substances 0.000 description 16
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- ZEMPKEQAKRGZGQ-AAKVHIHISA-N 2,3-bis[[(z)-12-hydroxyoctadec-9-enoyl]oxy]propyl (z)-12-hydroxyoctadec-9-enoate Chemical compound CCCCCCC(O)C\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CC(O)CCCCCC)COC(=O)CCCCCCC\C=C/CC(O)CCCCCC ZEMPKEQAKRGZGQ-AAKVHIHISA-N 0.000 description 2
- WRYLYDPHFGVWKC-UHFFFAOYSA-N 4-terpineol Chemical compound CC(C)C1(O)CCC(C)=CC1 WRYLYDPHFGVWKC-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 229940072049 amyl acetate Drugs 0.000 description 2
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229960004418 trolamine Drugs 0.000 description 2
- WRYLYDPHFGVWKC-SNVBAGLBSA-N 4-Terpineol Natural products CC(C)[C@]1(O)CCC(C)=CC1 WRYLYDPHFGVWKC-SNVBAGLBSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000009313 farming Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
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- Compositions Of Oxide Ceramics (AREA)
- Resistance Heating (AREA)
Abstract
The present invention relates to a semiconductive ceramic thick film heating material. A function phase and an adhesion phase are mixed according to proportion, thick film ink is formed by adding organic carriers, in this way, an electric heating exothermic material is made, and a thick film resistor is sintered at high temperature after spreading the electric heating exothermic material on a basal body. The function phase comprises one or more simple substance elements in germanium, silicon and carbon and various kinds of oxide such as copper oxide, zinc oxide, magnesia, alumina, silicon oxide, boron oxide, ytterbium oxide, lanthanum oxide and bismuth oxide, and the content ratio according to weight is (0 to 4.5) %; an electric resistance property modifier of the function phase is made of copper oxide and rare earth oxide such as ytterbium oxide and lanthanum oxide. A thermostability modifier of the function phase is made of alumina, boron oxide, bismuth oxide, silicon oxide, magnesium oxide, zinc oxide, cordierite and boltonite, the cordierite and boltonite are made of silicon oxide, alumina and magnesium oxide, and the content ratio according to weight is (30 to 48) %. The function phase material: the adhesion phase =70 to 50%: 30 to 50%; solid phase materials: the organic carriers =24 to 88%: 76 to 12%.
Description
Technical field
Thick-film electronic material and electric-heating technology field under the present invention.
Technical background
Thick-film electronic material and technology are widely used in the prior art, are mainly used in Thick ﹠ Thin Film Integrated Circuit technology and the electronics chip components and parts technology.These thick-film materials mainly are used as conductor and resistance, appearance element, carry out information processing, do not have electric heating function.Electric-heating technology is with a long history, the Heating element that uses on the fields such as household electrical appliance and worker, farming, doctor, scientific research is nichrome wire or electrothermal tube mostly for a long time, traditional resistance wire has heating efficiency low, and the life-span is short, can not be in shortcomings such as work under the low voltage (as 12V).The Heating element of the replacement electrothermal tube that grows up the seventies has the PTC ceramic plate and is the coating Electric radiant Heating Film of base based on the film-type Electric radiant Heating Film of stannic oxide and with carbon.They use power-frequency voltage, and heating temp is no more than 300 ℃.Can partly replace electrothermal tube, be applied to electric chafing dish, electric cooker is on about 200～300 ℃ product of heating temps such as warm-air drier.But above-mentioned materials exists heating temp lower, and (as the PTC ceramic plate) that have has Lead contamination, and shortcoming such as can not work under no-load condition has limited their application.Shortcomings such as the oxide compound thick film exothermic material that RECENT DEVELOPMENTS is got up also has the performance wild effect, and when surface temperature surpassed 600 ℃, power attenuation was fast, and the resistance of material side is big.
Summary of the invention
The present invention can reach 800 ℃ for the heating temp maximum, and high-temperature stability is good; Side resistance is less, can depress the semiconductor thick film exothermic material of use in safety voltage such as 12V, 24V, 36V or 110V, 220V, 380V alternating current-direct current.
The said semiconductor thick film of the present invention exothermic material adopts thick-film electronic material and technology, manufactures the exothermic material with electric heating function.With function phase (containing properties-correcting agent), bonding mutually by the suitable proportion mixing, add organic carrier and form thick film ink, by silk screen printing or impregnation technology, slurry is coated on the matrixes such as alumina ceramics or chemical porcelain, behind high temperature sintering, form and have from limitting temperature function, nontoxic semiconductor resistor-type thick film Heating element.
The function of semiconductor thick film ink is by one or more simple substance elements and multiple oxide compound in germanium (Ge), silicon (Si), the carbon (C): cupric oxide (CuO), zinc oxide (ZnO), magnesium oxide (MgO), aluminum oxide (Al
2O
3), silicon oxide (SiO
2), boron oxide (B
2O
3), yttrium oxide (Y
2O
3), lanthanum trioxide (La
2O
3), bismuth oxide (Bi
2O
3) form;
Wherein just to hinder characteristic properties-correcting agent mutually be cupric oxide (CuO) and rare earth oxide to function: yttrium oxide (Y
2O
3), lanthanum trioxide (La
2O
3) form.
The middle mutually thermostability properties-correcting agent of function is by aluminum oxide (Al
2O
3), boron oxide (B
2O
3), bismuth oxide (Bi
2O
3), silicon oxide (SiO
2), magnesium oxide (MgO), zinc oxide (ZnO) and by silicon oxide (SiO
2), aluminum oxide (Al
2O
3), the trichroite (2MgO2Al that makes of magnesium oxide (MgO)
2O
35SiO
2), forsterite (2MgOSiO
2) form.
Bonding glass powder by the ordinary method preparation.They are made up of silicon (Si), aluminium (Al), boron (B), zinc (Zn), magnesium (Mg), calcium (Ca), potassium (K), sodium lead-free oxide compounds such as (Na).
The said organic carrier of the present invention can be following ingredients: Viscotrol C, butylcarbitol, butyl carbitol amyl acetate, dibutyl phthalate (DBP), trolamine, Terpineol 350, ethanol, propyl carbinol, ethyl cellulose, Yelkin TTS.
The content of the middle mutually side's resistance of function characteristic properties-correcting agent is (0～4.5) % by weight;
The function content of middle thermostability properties-correcting agent mutually is (30～48) % by weight;
Function phase material and bonding weight ratio mutually, proportioning is: the function phase material: bonding phase=(70～50) %: (30～50) %;
Solid phase material (function phase+bonding phase) with the weight ratio of organic carrier is: solid mutually: organic carrier=(24～88) %: (76～12) %.
The present invention has following effect:
(1) heating temp is from room temperature to 800 degree centigrade;
(2) the side resistance of thick-film material is from 2 Europe/sides (Ω/ )～500 kilo-ohm/square (K Ω/);
(3) low-resistance material can use low-work voltage (12V, 24V, 36V), highly resistant material use power-frequency voltage (110V, 220V) etc.
(4) not leaded and other toxic substance of starting material, non-environmental-pollution.
(5) this material has high infrared energy and high electricity-thermal radiation efficiency of conversion;
(6) satisfy the demand for heat (as noninductive electric iron) of noninductive occasion;
(7) life-span is long;
(8) film and matrix bond are very firm, cold-resistant thermal shocking good (from room temperature to 700 degree centigrade cold cycling repeatedly, rete do not have burst and obscission).
Embodiment
Function phase (semiconductor thick film ink) integral part 10 examples (weight percent):
| Numbering | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
| Si | 45 | 50 | 55 | 40 | 60 | 50 | 67 | |||
| SiO 2 | 17 | 10 | 20 | 15 | 15 | 20 | 20 | 16 | 30 | 11 |
| Ge | 50 | 51 | 57 | |||||||
| C | 10 | 15 | 10 | 14 | ||||||
| La 2O 3 | 0.5 | 1.0 | 1.0 | |||||||
| Y 2O 3 | 1.0 | 1.0 | 3.0 | 1.5 | ||||||
| Bi 2O 3 | 1.0 | 1.0 | ||||||||
| ZnO | 2.0 | 10 | 1.7 | 1.0 | 2.0 | 2.0 | 1.0 | |||
| Al 2O 3 | 15 | 15 | 5.0 | 25 | 20 | 20 | 10 | 15 | 10 | 9.0 |
| CuO | 3.0 | 1.0 | 4.5 | 3.2 | 1.5 | |||||
| B 2O 3 | 3.5 | 3.0 | 2.2 | 4.0 | 4.0 | 3.5 | 4.3 | 4.0 | 7.0 | |
| MgO | 7.0 | 3.0 | 1.8 | 3.0 | 4.3 | 3.0 | 2.0 | 1.5 | 1.0 | 2.0 |
Bonding phase (conventional lead-free glass powder) 5 examples (weight percent):
| Numbering | SiO 2 | Al 2O 3 | B 2O 3 | ZnO | MgO | CaO | Na 2O | K 2O |
| 1 | 73 | 1.6 | 3.7 | 5.4 | 16.3 | |||
| 2 | 67 | 2.0 | 22 | 6.5 | 6.5 | |||
| 3 | 60 | 15 | 20 | 5.0 | ||||
| 4. | 55 | 17 | 15 | 4.5 | 3.5 | 5.0 | ||
| 5 | 50 | 21.7 | 11.5 | 8.3 | 8.5 |
Composition 9 examples (weight percent) of organic carrier:
| Numbering | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
| Viscotrol C | 8 | 8 | 7 | 8 | 8 | 8 | 1.5 | 1.4 | |
| Terpineol 350 | 93 | 73 | 61 | 69 | 68 | 64 | 65.5 | 4.9 | 4.2 |
| Butylcarbitol | 15 | 10 | 10 | 16 | 20 | ||||
| Propyl carbinol | 10 | 10 | 10 | 5 | 10 | ||||
| The butyl carbitol amyl acetate | 3 | 3 | 3 | ||||||
| Ethyl cellulose | 4 | 4 | 3 | 4 | 4 | 4 | 2 | 2.1 | 3 |
| Yelkin TTS | 0.5 | 0.5 | 0.4 | ||||||
| Dibutyl phthalate (DBP) | 1 | 3 | 1.0 | ||||||
| Ethanol | 90 | 81 | |||||||
| Trolamine | 2 | 2 | 1 |
Sintering temperature: 1200～1350 degrees centigrade;
Body material is: alumina ceramics or chemical porcelain, base shape can be flat board or tubulose;
Its side's resistive scope be 2 Europe/sides (Ω/ )～500 kilo-ohm/side (and K Ω/), as required, apply rated operational voltage after, from tens to 800 degrees centigrade of heating temps.
Claims (4)
1, a kind of semiconductor thick film exothermic material is characterized in that, with the function phase, bondingly be mixed in proportion mutually, add organic carrier and form thick film ink, manufacture exothermic material, it is coated on the matrix, behind high temperature sintering, form thick-film resistor with electric heating function; Said function is by germanium Ge, silicon Si, carbon C simple substance element and cupric oxide CuO, zinc oxide ZnO, magnesium oxide MgO, aluminium oxide Al
2O
3, silicon oxide sio
2, boron oxide B
2O
3, yttrium oxide Y
2O
3, lanthanum trioxide La
2O
3, bismuth oxide Bi
2O
3Form;
Wherein the square mutually positive characteristic properties-correcting agent of function is cupric oxide CuO and rare earth oxide: yttrium oxide Y
2O
3, lanthanum trioxide La
2O
3Form;
The middle mutually thermostability properties-correcting agent of function is by aluminium oxide Al
2O
3, boron oxide B
2O
3, bismuth oxide Bi
2O
3, silicon oxide sio
2, magnesium oxide MgO, zinc oxide ZnO and by silicon oxide sio
2, aluminium oxide Al
2O
3, the trichroite made of magnesium oxide MgO, forsterite form;
The content of the middle mutually side's resistance of function characteristic properties-correcting agent is 0～43% by weight;
The function content of middle thermostability properties-correcting agent mutually is 30～48% by weight;
Function phase material and bonding weight ratio mutually, proportioning is:
Function phase material: bonding phase=70～50%: 30～50%;
The solid phase material---" function phase+bonding phase " with the weight ratio of organic carrier is: solid mutually: organic carrier=24～88%: 76～12%.
According to the said semiconductor thick film of claim 1 exothermic material, it is characterized in that 2, sintering temperature is 1200～1350 degrees centigrade.
According to the said semiconductor thick film of claim 1 exothermic material, it is characterized in that 3, said body material can be alumina ceramics, also can be chemical porcelain; Said base shape can be flat board also can be tubulose.
According to the said semiconductor thick film of claim 1 exothermic material, it is characterized in that 4, its side's resistive scope of said exothermic material is 2 Ou Fang (Ω/ )～500 kilo-ohm/side (K Ω/).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03125351 CN1273560C (en) | 2003-09-01 | 2003-09-01 | Semiconductive ceramic thick film heating material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03125351 CN1273560C (en) | 2003-09-01 | 2003-09-01 | Semiconductive ceramic thick film heating material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1490376A CN1490376A (en) | 2004-04-21 |
| CN1273560C true CN1273560C (en) | 2006-09-06 |
Family
ID=34153030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03125351 Expired - Fee Related CN1273560C (en) | 2003-09-01 | 2003-09-01 | Semiconductive ceramic thick film heating material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1273560C (en) |
Cited By (3)
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|---|---|---|---|---|
| EP1714577A2 (en) | 2005-04-18 | 2006-10-25 | Hexagear Industries Limited | Hot air blower with ceramic heating element |
| CN102269086A (en) * | 2011-07-01 | 2011-12-07 | 南京航空航天大学 | Heavy oil engine cold-starting preheating device and method |
| CN109734480A (en) * | 2019-02-27 | 2019-05-10 | 常州联德陶业有限公司 | A kind of aluminium nitride ceramics heater cofiring high temperature exothermic slurry and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100386829C (en) | 2004-07-28 | 2008-05-07 | 王克政 | PTC thick film curc uit controllable electric heating element |
| CN1937856B (en) * | 2006-07-28 | 2010-12-15 | 王克政 | Rare earth basic-metal resistance size for metal base board based rare earth thick film circuit and its preparing process |
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2003
- 2003-09-01 CN CN 03125351 patent/CN1273560C/en not_active Expired - Fee Related
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| EP1714577A2 (en) | 2005-04-18 | 2006-10-25 | Hexagear Industries Limited | Hot air blower with ceramic heating element |
| CN102269086A (en) * | 2011-07-01 | 2011-12-07 | 南京航空航天大学 | Heavy oil engine cold-starting preheating device and method |
| CN109734480A (en) * | 2019-02-27 | 2019-05-10 | 常州联德陶业有限公司 | A kind of aluminium nitride ceramics heater cofiring high temperature exothermic slurry and preparation method thereof |
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|---|---|
| CN1490376A (en) | 2004-04-21 |
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