CN1272474C - Wafer electroplating device and method - Google Patents
Wafer electroplating device and method Download PDFInfo
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- CN1272474C CN1272474C CN 02148886 CN02148886A CN1272474C CN 1272474 C CN1272474 C CN 1272474C CN 02148886 CN02148886 CN 02148886 CN 02148886 A CN02148886 A CN 02148886A CN 1272474 C CN1272474 C CN 1272474C
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Abstract
The present invention relates to a device and a method for electroplating wafers, which belongs to a vertical fountain type. The wafer electroplating device comprises a wafer rotating module, a vertical upper and lower module, a water inclination module, a machine frame main body module, etc., wherein the wafer rotating module provided with a water clamp and a rotating shaft and the wafer inclination module provided with a plating tank unit are arranged on a rotating table and are driven by a linkage device (such as a pneumatic cylinder), and a wafer and the plating tank unit are simultaneous inclined appropriately. In the wafer electroplating method, the rotating shaft with the wafer clamp and the plating tank unit are together arranged on the rotating table with a horizontal rotating shaft, the wafer is inclined at a large angle with the horizontal surface through the drive of the linkage device, gas generated by electroplating can be easily released from the electroplated surface of the wafer, and thereby, better electroplating quality of the wafer can be obtained.
Description
Technical field
The present invention relates to the crystal column surface method for electrochemical machining, particularly a kind of wafer electroplanting device and method.
Technical background
In the wafer plating mode that adopts lift-off blast, electroplate and to obtain uniform electroplating thickness through the rotation wafer, this kind plating mode does not exist together with bath bubble formula (Bath Type) maximum, is that anchor clamps are the dry type contact (Dry Contact) in non-whole immersion plating bath.
The lift-off blast mode is that wafer is placed the coating bath top, the bubble that in the electroplating reaction process, produces, be attached to the plating face of wafer easily, cause the electroplating reaction at bubble place to stop, and then defective is electroplated in generation, for avoiding producing above-mentioned defective, can bubble be escaped easily angle of wafer tilt from crystal column surface.
The wafer tilt mode is changeed an angle for the turning axle that will accompany wafer, make itself and fixed plating tank at angle, this mode is when electroplating as 12 cun big wafers, because the inclination radius increases, the one side place at anchor clamps edge can immerse in the plating bath, be the back side of avoiding plating bath to pollute anchor clamps, general angle of inclination has only 1～2 degree, and the effect that this less pitch angle will make bubble escape is affected.On the other hand, when anchor clamps tilt rotation, can make some mutual contacting in air and plating bath of anchor clamps, thereby be easy to generate another kind ofly, and bring into the plating bath from the plating bath outside and then increase galvanized defective generation the disadvantageous outside bubble of electroplating reaction.
The wafer plating mode of lift-off blast, need to utilize the appropriate gap of control wafer and plating bath liquid level, make plating bath in coating bath, to flow out coating bath again by pressure accumulation, its main purpose is to force plating bath to contact uniformly with whole wafer surfacing, owing to will form the pressure accumulation effect, this formed circumferential area in gap must make the effusive speed V2 of plating bath be slightly larger than the speed V1 that plating bath flows into, and produce plating bath ejection uniformly in same slit less than the area of plating bath inlet.
Yet as previously mentioned, the wafer plating mode of lift-off blast can obtain uniform electrolytic coating thickness, but the plating defective because of the bubble obstruct also takes place easily, the bubble that is produced when electroplating for making can be escaped from electroplating the wafer face smoothly, prior art is except producing the disturbance by wafer is rotated, more with wafer tilt, so that bubble is escaped direction because of the buoyancy relation.
Coating bath is fixed in the prior art, only wafer jig is tilted so that wafer and horizontal plane have angle, because wafer and plating bath space change, except being difficult for keeping needed pressure accumulation effect, force outside the plating bath contact wafer plating face, some mutual the contacting in air and plating bath of easier anchor clamps because of rotation, generation is to the disadvantageous bubble of electroplating reaction, and bring into the plating bath from the plating bath outside, and then increase galvanized defective generation; And generally speaking, prior art can tilt the angle of wafer limited be 1～2 degree No. 6080291, U.S. Pat (can with reference to), thereby benefit not remarkable for the effect that bubble is escaped.
In addition No. 6080291, U.S. Pat and United States Patent (USP) US6334937 number its texturally have following shortcoming at least:
1, during wafer tilt, coating bath is not only controlled the space change of plating bath ejection for maintaining static, and wafer is can the angle of inclination also less.
The situation at the plating bath polluting wafer back side when the anchor clamps band wafer tilt, takes place in 2, anchor clamps ringless-type baffle ring easily.
3, utilize robotic arm (Robot) rotation wafer jig, structure is complicated.
4, electroplate the no airtight design of spatial sealing, it is excessive effectively to prevent to electroplate the gas that is produced.
Because the shortcoming of existing wafer electroplanting device and method, the inventor is grasping the practical experience of being engaged in product design and development for many years, and actual design, experiment via have many times caused generation of the present invention.
Summary of the invention
The objective of the invention is provides a kind of and can adjust the wafer tilt angle arbitrarily at the wafer plating mode that improves existing lift-off blast, and the gas that plating is produced is easy to the wafer electroplanting device from the plate surface escape of wafer.It is textural to include wafer rotating module, module, wafer tilt module, frame main body module etc. vertically, to contain the wafer rotating module of wafer jig, turning axle and contain the unitary wafer tilt module of coating bath and be located on the universal stage, the drive of mat one interlinkage (as pneumatic cylinder), make wafer and coating bath unit can produce appropriate tilt simultaneously, and the angle of this inclination can be adjusted arbitrarily.
Another object of the present invention provides a kind of wafer electroplanting device that can prevent the plating bath polluting wafer back side at the wafer plating mode that improves existing lift-off blast.Its structure is to be provided with drip ring in wafer jig, and when the barrier effect by this drip ring made the anchor clamps band the wafer tilt rotation, plating bath can not pollute wafer rear.
Another purpose of the present invention provides a kind of wafer electroplanting device of not electroplating the gas leak situation because of the inclination wafer at the wafer plating mode that improves existing lift-off blast.Its structure is to be provided with the coating bath loam cake in the wafer rotating module, is subjected to the drive of module vertically and when descending, the coating bath loam cake can cover sealing coating bath unit to prevent to electroplate the gas leak that is produced with convenient wafer rotating module.
A further object of the present invention provides a kind of and can adjust the wafer tilt angle arbitrarily at the wafer plating mode that improves existing lift-off blast, and the gas that plating is produced is easy to the wafer electro-plating method from the plate surface escape of wafer.It is to contain the turning axle of wafer jig and coating bath unit common apparatus on the universal stage of a tool horizontal rotating shaft, utilize the drive of an interlinkage, impel wafer and horizontal plane can adjust and produce the inclination of wide-angle arbitrarily, the gas that plating is produced is easy to escape from the plate surface of wafer.
The object of the present invention is achieved like this:
A kind of wafer electroplanting device is provided, it is characterized in that, include:
The frame main body module is established a frame body, is provided with relevant pipe-line cell and control unit in the frame body;
The wafer rotating module is provided with a shell one side is connected with module vertically, establishes the wafer rotating mechanism in the shell, and the wafer rotating module is established a wafer jig in the below;
Module includes a column that is arranged on the universal stage vertically, is provided with drive unit vertically in the column, makes the wafer rotating module can do displacement up and down;
The wafer tilt module is provided with shaft seat in frame body two sides, is articulated with universal stage between shaft seat, and universal stage is provided with a connecting rod to be connected with interlinkage, and universal stage is provided with the coating bath unit;
Combination with above-mentioned member, utilize interlinkage that universal stage is rotated, universal stage constitutes the inclination of suitable angle, wafer jig and coating bath unit can be tilted simultaneously, therefore the gap of controlling the plating bath ejection does not change, and the angle of wafer tilt can be adjusted arbitrarily, and the gas that plating is produced is easy to escape from the plate surface of wafer.
This wafer rotating mechanism is made of air pressure swivel joint, wafer turning axle, electric power swivel joint and rotary drive unit, the top of this wafer turning axle and air pressure swivel joint are affixed, and the top of air pressure swivel joint and electric power swivel joint are affixed, driving the wafer turning axle by this rotary drive unit with drive unit rotates, establish a wafer and clamp pneumatic cylinder in the wafer turning axle, this pneumatic cylinder of mat is to clamp wafer jig.
This wafer jig is established one in appropriate location and is electroplated the negative electrode and the annular drip ring of usefulness.
Be provided with the coating bath loam cake in this shell below.
This interlinkage is a pneumatic cylinder.
This coating bath unit is established one and is had plating bath and anodic plating tank, is provided with the plating bath overflow groove in the plating tank periphery.
A kind of wafer electro-plating method that uses aforementioned arbitrary wafer electroplanting device the steps include:
A. put into wafer in anchor clamps;
B. with the anchor clamps clamping;
C. be moved down into and electroplate the position;
D. the universal stage that tilts drives wafer jig and the coating bath unit tilts jointly simultaneously by universal stage;
E. rotating wafer at a slow speed electroplates;
F. electroplate and finish;
G. upwards leave and electroplate the position;
H. just returning simultaneously by universal stage drive wafer jig and coating bath unit;
I. the high speed rotating wafer carries out air-dry debris;
J. wafer stops the rotation;
K. anchor clamps are opened;
L. wafer takes out.
Compared with prior art, advantage of the present invention and positively effect are:
(1) provides bigger wafer tilt angle (can reach more than 45 degree), more can impel bubble easily from electroplating escaping of wafer face than prior art.
(2) provide wafer tilt angle arbitrarily, have more elasticity than prior art.
(3) wafer jig does not have and partly contact alternately in air with in the plating bath, improve bubble that prior art reacts electroless plating bring in the plating bath situation.
(4) wafer jig can be because of the wafer tilt wide-angle, and different design consideration is arranged, thereby more simple than the wafer jig design of prior art.
(5) electroplate the flow field and possess consistence, in case can will not change whole galvanic anode and negative electrode and geometric relationships such as wafer and plating bath face as the prior art wafer tilt.
In sum, innovative design of the present invention, be meant that especially it changes existing wafer electroplanting device with the fixed mode of coating bath, to contain the rotating module of wafer jig and coating bath unit common apparatus on the universal stage that horizontally rotates, make the easy control in gap of plating bath ejection and when wafer is electroplated the angle of inclination adjustment, keep the geometric relationship of crystal column surface and plating bath constant.Its integral body is escaped from electroplating the wafer face easily with bubble, and can obtain better wafer electroplating quality; And can adjust wafer tilt angle, wafer jig simplicity of design arbitrarily, be applicable to the large-size wafer, prevent the plating bath polluting wafer back side, prevent to electroplate effects such as the gas that produces is excessive.
Description of drawings
Fig. 1 is the three-dimensional appearance synoptic diagram of electroplanting device of the present invention.
Fig. 2 is the frontview of electroplanting device of the present invention.
Fig. 3 is the right side view of electroplanting device of the present invention.
Fig. 4 is the top view of electroplanting device of the present invention.
Fig. 5 is the profile construction synoptic diagram of electroplanting device of the present invention.
Fig. 6 is the local amplification profile organigram of wafer jig of the present invention.
The piece number explanation:
10 frame main body modules, 11 frame bodies
111 wheel bodys, 112 daggers
20 wafer rotating modules, 21 shells
22 air pressure swivel joints, 23 wafer turning axles
24 electric power swivel joints, 241 rotary drive units
Anchor clamps on 25 wafer jigs, 251 wafers
252 wafer lower clamps, 253 negative electrodes
254 annular drip ring 26 wafers clamp pneumatic cylinder
27 coating bath loam cakes 30 are module vertically
31 columns, 32 ball screw sliding units
33 servomotors, 40 wafer tilt modules
41 rotation seats, 411 rotation axiss
412 solid lock unit 42 universal stages
421 connecting rods, 43 pneumatic cylinders
44 coating bath unit, 441 plating tanks
442 plating bath overflow grooves
Embodiment
Below only pass through specific embodiment, and assistant is with the detailed explanation of graphic do, so that can have and further understand and understanding for every function, the characteristics of this creation:
Shown in Fig. 1～4, electroplanting device structure of the present invention includes:
Frame main body module 10, be provided with the frame body 11 that firmly to put, for main formation module installing, be provided with the dagger 112 of wheel body 111 and adjustable in nearly four corner places of frame body 11, make frame body 11 in frame body 11, be provided with relevant pipe-line cell and control unit etc. in addition for slide displacement and fixing;
Combination with above-mentioned structure, can utilize the telescopic action of the atmospheric pressure pole of pneumatic cylinder 43 that universal stage 42 is rotated, that is universal stage 42 can constitute the inclination of suitable angle, simultaneously owing to plating tank 441 and wafer jig 25 are located on the universal stage 42 simultaneously, plating tank 441 can be simultaneously along with universal stage 42 tilts with wafer jig 25, so during wafer tilt, the gap of control plating bath ejection never changes, and the whole change of the adjustable angle of wafer tilt is big, the gas that plating is produced is easy to escape from the plate surface of wafer, thereby obtains better wafer electroplating quality.
As shown in Figure 6, wafer jig 25 is provided with anchor clamps 251, lower clamp 252 with effective clamping wafer, establish-electroplate the negative electrode 253 of usefulness in appropriate location, wafer jig 25 is established an annular drip ring 254 in addition, when being with wafer tilt, can prevent the situation at the plating bath polluting wafer back side with convenient wafer jig 25.
Wafer electro-plating method of the present invention is that the turning axle 23 that will contain wafer jig 25 has on the universal stage 42 of horizontal rotating shaft 411 in one with coating bath unit 44 common apparatus, utilize the drive of an interlinkage (the present invention is as embodiment with a pneumatic cylinder 43), the inclination that impels wafer and horizontal plane can produce wide-angle, the gas that plating is produced are easy to escape from the plate surface of wafer.
For ease of understanding, general description is as follows again with its step now:
A. put into wafer in anchor clamps; B. with the anchor clamps clamping; C. be moved down into and electroplate the position; D. the universal stage that tilts, and drive wafer jig and the coating bath unit tilts jointly simultaneously by universal stage; E. rotating wafer at a slow speed electroplates; F. electroplate and finish; G. upwards leave and electroplate the position; H. just returning simultaneously by universal stage drive wafer jig and coating bath unit; I. the high speed rotating wafer carries out air-dry debris; J. wafer stops the rotation; K. anchor clamps are opened; L. wafer takes out.
Claims (7)
1, a kind of wafer electroplanting device is characterized in that, includes:
The frame main body module is provided with a frame body, is provided with relevant pipe-line cell and control unit in the frame body;
The wafer rotating module is provided with a shell one side is connected with module vertically, establishes the wafer rotating mechanism in the shell, and the wafer rotating module is established a wafer jig in the below;
Module includes a column that is arranged on the universal stage vertically, is provided with drive unit vertically in the column, makes the wafer rotating module can do displacement up and down;
The wafer tilt module is provided with shaft seat in frame body two sides, is articulated with universal stage between shaft seat, and universal stage is provided with a connecting rod to be connected with interlinkage, and universal stage is provided with the coating bath unit;
Combination with above-mentioned member, utilize interlinkage that universal stage is rotated, universal stage constitutes the inclination of suitable angle, wafer jig and coating bath unit can be tilted simultaneously, therefore the gap of controlling the plating bath ejection does not change, and the angle of wafer tilt can be adjusted arbitrarily, and the gas that plating is produced is easy to escape from the plate surface of wafer.
2, wafer electroplanting device according to claim 1, it is characterized in that, this wafer rotating mechanism is made of air pressure swivel joint, wafer turning axle, electric power swivel joint and rotary drive unit, the top of this wafer turning axle and air pressure swivel joint are affixed, and the top of air pressure swivel joint and electric power swivel joint are affixed, drive the wafer turning axle by this rotary drive unit with drive unit and rotate, establish a wafer and clamp pneumatic cylinder in this wafer turning axle, this pneumatic cylinder of mat is to clamp wafer jig.
3, wafer electroplanting device according to claim 1 is characterized in that, this wafer jig is established one in appropriate location and electroplated the negative electrode and the annular drip ring of usefulness.
4, wafer electroplanting device according to claim 1 is characterized in that, is provided with the coating bath loam cake in this shell below.
5, wafer electroplanting device according to claim 1 is characterized in that this interlinkage is a pneumatic cylinder.
6, wafer electroplanting device according to claim 1 is characterized in that this coating bath unit is established one and had plating bath and anodic plating tank, is provided with the plating bath overflow groove in the plating tank periphery.
7, a kind of wafer electro-plating method that uses as arbitrary wafer electroplanting device in the claim 1～6 the steps include:
A. put into wafer in anchor clamps;
B. with the anchor clamps clamping;
C. be moved down into and electroplate the position;
D. the universal stage that tilts drives wafer jig and the coating bath unit tilts jointly simultaneously by universal stage;
E. rotating wafer at a slow speed electroplates;
F. electroplate and finish;
G. upwards leave and electroplate the position;
H. just returning simultaneously by universal stage drive wafer jig and coating bath unit;
I. the high speed rotating wafer carries out air-dry debris;
J. wafer stops the rotation;
K. anchor clamps are opened;
L. wafer takes out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02148886 CN1272474C (en) | 2002-11-22 | 2002-11-22 | Wafer electroplating device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02148886 CN1272474C (en) | 2002-11-22 | 2002-11-22 | Wafer electroplating device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1502725A CN1502725A (en) | 2004-06-09 |
| CN1272474C true CN1272474C (en) | 2006-08-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02148886 Expired - Fee Related CN1272474C (en) | 2002-11-22 | 2002-11-22 | Wafer electroplating device and method |
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| Country | Link |
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| CN (1) | CN1272474C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102277613A (en) * | 2010-06-08 | 2011-12-14 | 日立金属株式会社 | electroplating device |
| CN108118377A (en) * | 2017-12-27 | 2018-06-05 | 德淮半导体有限公司 | Reduce the equipment and method of empty wafer defect |
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| CN104562161B (en) * | 2015-02-11 | 2016-08-17 | 苏州托尔斯自动化有限公司 | 3D rocking equipment is used in a kind of plating |
| CN110387571B (en) * | 2018-04-17 | 2021-07-30 | 颀中科技（苏州）有限公司 | Wafer clamp for electroplating equipment |
| CN109082699B (en) * | 2018-08-23 | 2019-12-17 | 中国人民解放军海军航空大学青岛校区 | Rotatable all-round electroplating device for electronic component |
| CN114369816A (en) * | 2020-10-15 | 2022-04-19 | 日月光半导体制造股份有限公司 | Chemical plating tank, chemical plating system and chemical plating method |
| CN112458509B (en) * | 2020-11-16 | 2021-11-05 | 苏州太阳井新能源有限公司 | Clamp for electroplating photovoltaic cell |
| CN112853441B (en) * | 2021-01-08 | 2022-04-08 | 上海戴丰科技有限公司 | Wafer horizontal electroplating device and cathode electroplating solution jet flow method |
| CN112962129B (en) * | 2021-02-03 | 2023-04-14 | 深圳市永源微电子科技有限公司 | Wafer double-sided copper electroplating thick film equipment |
| CN116065222B (en) * | 2023-03-09 | 2023-06-13 | 苏州智程半导体科技股份有限公司 | Wafer electroplating clamp moving device |
-
2002
- 2002-11-22 CN CN 02148886 patent/CN1272474C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102277613A (en) * | 2010-06-08 | 2011-12-14 | 日立金属株式会社 | electroplating device |
| CN108118377A (en) * | 2017-12-27 | 2018-06-05 | 德淮半导体有限公司 | Reduce the equipment and method of empty wafer defect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1502725A (en) | 2004-06-09 |
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Granted publication date: 20060830 Termination date: 20181122 |