CN1267735C - Voltage detection apparatus - Google Patents
Voltage detection apparatus Download PDFInfo
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- CN1267735C CN1267735C CN 03146612 CN03146612A CN1267735C CN 1267735 C CN1267735 C CN 1267735C CN 03146612 CN03146612 CN 03146612 CN 03146612 A CN03146612 A CN 03146612A CN 1267735 C CN1267735 C CN 1267735C
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- resistance
- voltage
- transistor
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- quasi position
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Abstract
The present invention relates to a voltage detecting device which is composed of a resistor pair, a reference resistor, at least one transistor pair and a comparator, wherein the resistor pair is respectively connected with an input voltage and the reference resistor; the at least one transistor pair is respectively connected with the resistor pair and the reference resistor for generating a detecting voltage and a voltage to be detected; thus, the comparator compares the detecting voltage with the voltage to be detected to output a detecting voltage. The affection of a temperature coefficient can be eliminated by regulating the area ratio of the transistor pair and the ratio of the reference resistor to the resistor pair.
Description
Technical field
The invention relates to a kind of voltage check device, refer to a kind of voltage check device that not influenced by gradient of temperature and operating voltage especially.
Background technology
Fig. 1 shows the synoptic diagram of conventional voltage testing circuit, its mainly comprise resistance (R1, R2, R3) 11,12,13, main circuit elements such as two-carrier transistor 14 and comparer 15, wherein, it is right that resistance 11,12 constitutes a resistance, resistance 13 is reference resistance.The principle of work of voltage detecting circuit is as described below, when the electric resistance partial pressure of input voltage (Vin)
Penetrate base voltage (V less than two-carrier transistor 14
EB) time, comparer 15 is output as noble potential (V
DD) voltage, when the electric resistance partial pressure of input voltage is penetrated base voltage (V greater than two-carrier transistor 14
EB) time, then the output transition of comparer 15 is electronegative potential (GND).
Yet, two-carrier transistor 14 penetrate the characteristic that base voltage has negative temperature coefficient (increase to reduce with the work temperature), and can change with its operating voltage of work, make the variation of temperature and resistance value (R1) all can cause the accurate position change that detects voltage, but the situation of this kind accurate position change is not allowed in many practical applications.
Fig. 2 shows the synoptic diagram of the voltage detecting circuit of improvement, it comprises energy rank reference voltages (Band-Gap Reference Voltage) generator 21, resistance (R2, R3) 22,23 and comparer 24, can rank reference voltage generator 21 producing one can rank reference voltage (V
BG), wherein, this energy rank reference voltage has the characteristic that does not change with temperature, operating voltage and resistance value, 24 electric resistance partial pressures with energy rank reference voltage and input voltage (Vin) of comparer
Compare, make its accurate position of detecting voltage become
Therefore, as long as the accurate position of detecting voltage is greater than can the rank reference voltage, the accurate position of then any detection voltage all can be detected.
Fig. 3 show above-mentioned can rank the internal circuit synoptic diagram of reference voltage generator 21, it also comprises resistance (R1A, R2A, R3A) 31,32,33, (Q1 is Q2) to 34,35 and operational amplifier (OP) 36 for the two-carrier transistor.Owing to can must re-use the foregoing circuit element by rank reference voltage generator 21, and the transistorized area ratio that it adopted is also bigger, make this kind voltage detecting circuit design comparatively complicated and comparatively power consumption.Therefore, how to design and have the detection voltage that does not change, and have the low voltage detecting circuit with more not power consumption of circuit complexity, become the problem of needing solution badly with temperature, operating voltage and resistance value.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of voltage check device, can not be subjected to temperature, operating voltage and resistance value influences, can reach than less electricity consumption.
For achieving the above object, voltage check device of the present invention comprises:
One resistance is right, is connected with an input voltage;
One reference resistance, a wherein resistance right with this resistance is connected, for this input voltage of dividing potential drop, to produce one first comparative voltage;
At least one transistor is right, is connected to reaching this reference resistance with this resistance respectively, to produce one second comparative voltage; And
One comparer is connected between this resistance pair and this reference resistance, and is connected with the right wherein transistor of this at least one transistor, for receiving this first comparative voltage and this second comparative voltage, exports a voltage quasi position to compare.
Wherein, this resistance has a resistance value, this at least one transistor to having an area ratio to having a resistance ratio, this reference resistance, the influence that reduces temperature coefficient for the resistance value by adjusting the right resistance ratio of this resistance, this reference resistance and the right area ratio of this at least one transistor.
Wherein, this comparer has one and detects voltage quasi position, and this detects voltage quasi position
V wherein
BGBe this second comparative voltage, R2 is this resistance to a resistance wherein, and R3 is this reference resistance.
Wherein, when required detection voltage quasi position is not positioned at the accurate position of this second comparative voltage, then make the accurate position of this second comparative voltage be positioned at this detection voltage quasi position by resistance value and the right area ratio of this at least one transistor of adjusting the right resistance ratio of this resistance, this reference resistance.
Wherein, this comparer has one and detects voltage quasi position, and this at least one transistor is to having a pile iterated series, and wherein, this piles up progression and changes according to this detection voltage quasi position, for piling up progression according to this right number of this at least one transistor is set.
Wherein, when this detection voltage quasi position equals two times of this second comparative voltages, then this to pile up progression be two, and it is right to pile up (Cascode) two group transistors.
Described voltage check device also comprises a cut-off switch, and this cut-off switch flows into the right electric current of this resistance for cutting off, to enter a battery saving mode between this resistance pair and this input voltage.
Description of drawings
Fig. 1 is the synoptic diagram of known voltage testing circuit.
Fig. 2 is the synoptic diagram of known another voltage detecting circuit.
Fig. 3 is the internal circuit synoptic diagram of energy rank reference voltage generator.
Fig. 4 is the synoptic diagram of the voltage detecting circuit of a preferred embodiment of the present invention.
Fig. 5 is the circuit diagram of transistor to piling up of a preferred embodiment of the present invention.
Fig. 6 is the circuit diagram of the connection cut-off switch of a preferred embodiment of the present invention.
Fig. 7 is the synoptic diagram with the right voltage detecting circuit of cut-off switch and the multistage transistor that piles up of a preferred embodiment of the present invention.
Embodiment
Relevant preferred embodiment of the present invention, the circuit diagram that please show with reference to Fig. 4, its mainly by resistance to 41, reference resistance (R3) 42, transistor to 43 and comparer 44 formed, wherein, resistance comprises resistance (R1, R2) 411,412 to 41, transistor comprises transistor (Q1 to 43, Q2) 431,432, in present embodiment, transistor 431,432 is preferably two-carrier transistor (BJT).
Above-mentioned resistance is connected with input voltage (Vin) to 41, reference resistance 42 is connected to the resistance 412 in 41 with resistance, transistor to 43 respectively with resistance to 41 and reference resistance 42 be connected, be that transistor 431 is connected with resistance 411, transistor 432 is connected with reference resistance 42, the inverting input of comparer 44 is connected between resistance 412 and the reference resistance 42, and the normal phase input end of comparer 44 is connected between resistance 411 and the transistor 431.
As resistance 411 and transistor 431 junctions are denoted as the N1 node, reference resistance 42 is denoted as the N2 node with resistance 412 junctions, then produce one on the N1 node and detect voltage, produce input voltage dividing potential drop to be detected on the N2 node, 44 of comparers give comparison to N1 node voltage and N2 node voltage, when input voltage (Vin) when detecting voltage, then the N2 node voltage is less than the N1 node voltage, the negative terminal input voltage that is comparer 44 is less than the anode input voltage, when input voltage (Vin) when detecting voltage, then the N2 node voltage is greater than the N1 node voltage, the negative terminal input voltage that is comparer 44 is greater than the anode input voltage, and when input voltage (Vin) when equaling to detect voltage, then the N2 node voltage equals the N1 node voltage, the anode input voltage that is comparer 44 equals the negative terminal input voltage, to finish the processing of voltage detecting.
In present embodiment, the temperature compensation principle of the detection voltage on the N1 node and the temperature compensation principle of the input voltage dividing potential drop to be detected on the N2 node and known energy rank reference voltage circuit is similar.Therefore, please refer to Fig. 3 can rank reference voltage (V
BG) principle of work that produces, by among Fig. 3 as can be known:
V
BG=V
EB1+ (R
2/ R
3) [Δ V
EB+ V
OS] wherein, V
OSBe the offset voltage (Offset Voltage) of operational amplifier 36, Δ V
EBFor two-carrier transistor (Q1 and Q2) to 34,35 emitter-base bandgap gradings to the voltage difference of base stage, its value is:
ΔV
EB＝V
Tln(R
2A
Q2/R
1A
Q1)
A wherein
Q2/ A
Q1Be the area ratio of two-carrier transistor to (Q1 and Q2) 34,35, so can get:
Because of V
T+ kT/q=26mV|T=300 ° of K,
V
T/T＝K/q＝0.087mv/℃，
And V
EB=600mV|T=300 ° of K,
V
EB/T＝-2mv/℃，
Can learn by aforesaid equation, adjust resistance 31,32 resistance ratio, the two-carrier transistor can be removed energy rank reference voltage fully to 34,35 area ratio temperature coefficient.Similarly, in present embodiment, can be by adjusting reference resistance 42 and resistance can be removed temperature coefficient fully to 411,412 resistance ratio (adjusting the value of reference resistance 42) and transistor to 43 area ratio influence.
Yet input voltage to be detected may take place than the also high situation of input voltage that detects, so that can't detect.Therefore the transistor in the present invention is to 431,432 can be in order to pile up (Cascode), as shown in Figure 5, transistor is to 51,52 the accurate position of piling up progression foundation voltage to be detected is provided with, that is near voltage quasi position to be detected is positioned at detection voltage quasi position (N1 node voltage), then transistor is one to 51 progression, pair of transistor just only need be set to get final product 51, near voltage quasi position to be detected is positioned at two times of values of detection voltage quasi position, then transistor is two to 51 progression, keeps stable for the accurate position of detecting voltage.
Fig. 6 shows that testing circuit of the present invention adds first synoptic diagram of cut-off switch 62, its show resistance to 61 and input voltage (Vin) between set up a cut-off switch 62, in the time need not carrying out the voltage detecting action, can cut off by control cut-off switch 62 and flow into resistance to 61 electric current, to enter battery saving mode.Fig. 7 then shows the synoptic diagram with the right voltage detecting circuit of cut-off switch and the multistage transistor that piles up.
By above explanation as can be known, the present invention utilizes at least the one-level transistor that, resistance is constituted voltage detecting circuit to, divider resistance and comparer, and by adjusting the right area ratio of transistor or adjusting divider resistance and ratio that resistance is right reduces the influence of temperature coefficient, and this voltage-dividing detection circuit is not changed just by two voltages and resistance to be influenced, can make the accurate position of voltage detecting circuit keep stable, reduce the influence of temperature change, and have lower circuit complexity and low consumption electrical.
The foregoing description is only given an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (3)
1, a kind of voltage check device comprises:
One resistance is right, is connected with an input voltage;
One reference resistance, a wherein resistance right with this resistance is connected, for this input voltage of dividing potential drop, to produce one first comparative voltage;
At least one transistor is right, is connected to reaching this reference resistance with this resistance respectively, to produce one second comparative voltage; And
One comparer is connected between this resistance pair and this reference resistance, and is connected with the right wherein transistor of this at least one transistor, for receiving this first comparative voltage and this second comparative voltage, exports a voltage quasi position to compare; Wherein this resistance to have a resistance ratio, this reference resistance has a resistance value, this at least one transistor to having an area ratio, the influence that reduces temperature coefficient for the resistance value by adjusting the right resistance ratio of this resistance, this reference resistance and the right area ratio of this at least one transistor, and wherein this comparer has a detection voltage quasi position, this at least one transistor is to having a pile iterated series, this piles up progression and changes according to this detection voltage quasi position, for piling up progression according to this right number of this at least one transistor is set.
2, voltage check device as claimed in claim 1 is characterized in that, wherein, when this detection voltage quasi position equals two times of this second comparative voltages, then this to pile up progression be two, and it is right to pile up two group transistors.
3, voltage check device as claimed in claim 1 is characterized in that, also comprises a cut-off switch, and this cut-off switch flows into the right electric current of this resistance for cutting off, to enter a battery saving mode between this resistance pair and this input voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03146612 CN1267735C (en) | 2003-07-08 | 2003-07-08 | Voltage detection apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03146612 CN1267735C (en) | 2003-07-08 | 2003-07-08 | Voltage detection apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1566967A CN1566967A (en) | 2005-01-19 |
| CN1267735C true CN1267735C (en) | 2006-08-02 |
Family
ID=34471803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03146612 Expired - Fee Related CN1267735C (en) | 2003-07-08 | 2003-07-08 | Voltage detection apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1267735C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7809999B2 (en) * | 2005-07-19 | 2010-10-05 | Teradyne, Inc. | Ternary search process |
| CN101140301B (en) * | 2006-09-08 | 2010-09-29 | 深圳赛意法微电子有限公司 | Zero waiting current accurate excess voltage comparators |
| JP5291052B2 (en) * | 2010-06-09 | 2013-09-18 | パナソニック株式会社 | Power supply detection circuit |
| CN102830271A (en) * | 2011-06-15 | 2012-12-19 | 联咏科技股份有限公司 | Voltage detecting method and voltage detecting circuit |
-
2003
- 2003-07-08 CN CN 03146612 patent/CN1267735C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1566967A (en) | 2005-01-19 |
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