CN1267394A - Component with protective layer and method for producing protective layer for component - Google Patents

Component with protective layer and method for producing protective layer for component Download PDF

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Publication number
CN1267394A
CN1267394A CN98808247A CN98808247A CN1267394A CN 1267394 A CN1267394 A CN 1267394A CN 98808247 A CN98808247 A CN 98808247A CN 98808247 A CN98808247 A CN 98808247A CN 1267394 A CN1267394 A CN 1267394A
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China
Prior art keywords
protective layer
shell
covered
layer
circuit component
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Pending
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CN98808247A
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Chinese (zh)
Inventor
弗兰克·斯图班
于尔根·怀尔德
加伯里勒·斯托迪格尔
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Daimler Benz AG
Daimler AG
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Daimler Benz AG
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Publication of CN1267394A publication Critical patent/CN1267394A/en
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

The invention relates to a component with a protective layer, as well as a method for coating surfaces with a protective layer, in particular for electronic components. The characteristics of the protective layer vary across its thickness.

Description

The manufacture method that has the device and the used protective layer of device of protective layer
The present invention relates to a kind of manufacture method that has the device of protective layer and have a kind of device of protective layer.
Particularly each electronic unit is used when vehicle electric is technical, environmental condition partly all can apply very high load to electronic device from calorifics and on the mechanics, and has corrosivity.Yet in order to dispose inexpensive device, must use cheap plastic casing, to replace expensive metal shell or ceramic package., more novel device is furnished with thin shell, often also has a large amount of wiring simultaneously, and these wiring are drawn to the outside by shell wall, are subjected to the moisture diffusion influence easily.The thickness of plastic foreskin is more little, then just can be increased by the moisture that is penetrated into enclosure in the ambient air thereupon.For the electronic device with big length of side, the such problem of also subsidiary appearance is exactly the influence that they are subjected to the molding substance and the absciss layer between the lead frame (lead frame) of shell easily.When lead frame is subsidiary when also having many wiring, problem is especially serious.Moisture and ionic soil can almost penetrate in the shell in the clear along these wiring.
Water vapour of Shen Ruing or residual in the enclosure moisture are very harmful from the outside, and it is all the more so to cause electronic failure, particularly electronic device to be in more than 100 ℃ temperature following time.Therefore, enclosure contain wetly cavity can since with temperature constantly raise the water vapour that expand so break (popcorn effect).When placing electronic device memory time of shell longer, just have such danger, promptly moisture infiltrates in the electronic device, thereby makes it to be done for.
This fearful popcorn effect for fear of the electronic device aspect that has particularly added plastic foreskin that places shell, the dry several hrs of electronic device elder generation that for example will add shell, get up with drier soldering and sealing then, particularly that a soldering and sealing of several devices is good.Be conditional permission memory time by the device of soldering and sealing.When finishing electronic module, the device of drying like this and storage placed once more certain danger under the normal atmosphere, because the moisture inside that penetrates into the device that is added with shell is inevitable like that.
Therefore, in producing by batch, common situation is just to use up above-mentioned the standby of those devices with drier soldering and sealing and pack in the very narrow time limit.The device of newly making only allows certain hour to be in the normal atmosphere before it uses in the future and/or before in it packs the corresponding standard assembly into.Surpass this time limit, just have the danger of increase expense, because owing to be subjected to the device defects of moisture induction so electronic failure may take place.This point requires to try to achieve between aspect following two the coordination on a kind of close and the expense: being the production of parts on the one hand, is the new system device that is ready to sufficient amount for parts on the other hand.
Learn from DE-A1 40 40 822, electronic device, particularly dress chip just all scribbles a kind of protective layer, goes so as to stoping moisture to be diffused in the circuit.Protective layer is to be added drop-wise on must the chip surface of protection, and centrifugal treating in addition, makes it to be evenly distributed.The thickness of protective layer is to be decided by different performances, especially used revolution when the denseness of protective layer material and drying property thereof and hardening characteristics and centrifugal rotation processing.Preferentially with silicone or epoxy coating, because these two kinds of materials help distributing when centrifugal rotation processing.Subsequently with electron device package in a shell.
The shortcoming of said method is: so apply the protective material that gets on and no doubt can protect the surface of chip, but can not guarantee to realize tight sealing.Even after protective layer cure process step; the permeability of gas and moisture is still so big; particularly aspect the semiconductor device that should in high temperature range, use, make the burst that etching problem such as delamination in the shell of device, occur and contain wetly space expand.In addition, also there is a kind of like this danger, promptly under dress chip situation just, when protective layer is carried out centrifugal rotation processing, can damages the pressure welding silk.
DE 44 35 120 A1 disclosed a kind of device, and it has a kind of plastic protective layer that is divided into a plurality of individual layers, and this protective layer is covered with this device at least in part, and had different chemical and/or physical material performance on its thickness.Can be each individual layer separate regulation degree of cross linking.Yet, between each individual layer of protective layer, can form interface.These interfaces are possible penetration route that moisture enters protective layer inside.Mutually Die each individual layer must have can with the suitable elasticity of interlayer, it is too big to make that the hardness of for example adjacent layer or elasticity are unlikely difference, because otherwise the problem that each individual layer adheres to mutually will occur.
Task of the present invention is: propose a kind of device that has protective layer, the sealing of its protective layer is improved, and proposes a kind of method, is used for the device that simple production has protective layer with it.
Above-mentioned task is to solve by the feature described in the independent claims.Other improvement and favourable development are seen described in specification and the every dependent claims.
The device that the present invention proposes has a protective layer, particularly has a kind of protective layer of appearance, and this protective layer has different chemistry and/or physical material characteristic on its thickness.Superior especially is, this device is a kind of semiconductor device, and its outer surface is covered with a protective layer.Also have a favourable part be this element housing in a shell.
If protective layer from the distant place of device than from device have bigger hardness nearby, then be particularly advantageous.Like this, just can make protective layer suitable with device well.Look the difference of predetermined purposes, the performance of protective layer also be from the distant place of device than from device have bigger elasticity nearby, this also is to conform with very much purpose.Protective layer can also from the distant place of device than having bigger moisture resistance nearby from device.
Another favourable development of the present invention is, protective layer has bigger hardness than the distant place from device nearby from device.This point makes device be convenient to especially be encapsulated in the shell, because filler that may use or casing cover mating protection layer well avoids occurring the space.Another favourable development is, protective layer has bigger elasticity and/or moisture resistance than the distant place from device nearby from device.
A kind of superior structure is: protective layer has organic trait from device person far away, and nearly person then has inorganic nature from device.Encapsulation is improved with the adhesive force of shell on the device with appearance protective layer, and this is because this protective layer can be particularly advantageously suitable with its substrate.Meanwhile, device surface also has a sealing protective layer closely.
A kind of superior structure is: protective layer has organic trait from the nearly person of device, and person far away then has inorganic nature from device.The adhesive force of protective layer on device surface is improved, because device surface can be particularly advantageously suitable with its substrate.Device surface has obtained seal protection by one deck sealant.
Another kind of superior structure is: protective layer has organic and inorganic on its thickness and order organic trait.Another kind of superior structure is: protective layer has the order of inorganic, organic and inorganic nature on its thickness.So just can successfully obtain device and the sealed package application target best-fit.If protective layer only has the organic material performance, this is favourable.Another favourable development is: protective layer only has the inorganic material performance.
A favourable layout is, protective layer directly covers a kind of surface of integrated semiconductor device.Another favourable development is that protective layer is configured on the inner surface of shell.Another favourable development is that protective layer is configured on the outer surface of shell.
Advantageously, protective layer only has small thickness, promptly between 0.1 μ m and 10 μ m, thereby is that the space is saved in the encapsulation of device, but still can guarantees the sealing of protective layer and/or encapsulation.
In a kind of favourable device making method; at first first reacted constituent that is in a liquid state is incorporated into a region of no pressure controllably; evaporated at this; and essentially no carrier gas ground is incorporated into it in reaction zone of a vacuum equipment; here; its same second reacted constituent that has a kind of component at least; under the effect of heat energy and/or electromagnetic energy; react jointly and form a kind of product; then it is deposited on the surface for the treatment of coating and forms a protective layer at this; meanwhile controlledly adjust the composition of reacting gas, so that in deposition process, on the thickness of the layer of constantly growing, change the physics and/or the chemical property of this layer gradually.
Advantageously, in the deposition process of product, controlledly adjust the composition of reacting gas.Be preferably in the deposition process of product and add oxygen to reacting gas.Particularly advantageous is to supply with the oxygen with variable concentrations in deposition.
What conform with purpose is to act on reaction zone with high frequency electromagnetic radiation.
Favourable reacting gas is argon gas and/or nitrogen and/or hexamethyldisilane (HMDSN).Advantageously, used reaction gas pressure is between 0.1mbar (millibar) and 1.5mbar.Advantageously, Ye Tai parent material adds with the flow between 0.1ml/h (milliliter/hour) and 50ml/h.
Advantageously, at least in coating procedure the coated surface of heating and/or at least in coating procedure with the loading of high-frequency electrical magnetic energy in coated surface.Advantageously, at least in coating procedure with the voltage loading in coated surface.
To deeply illustrate the more vital features of the present invention below, and be described in detail with reference to accompanying drawing.Accompanying drawing is represented:
The sectional view of a kind of electronic device that Fig. 1 the present invention proposes,
The sectional view of a kind of electronic device that Fig. 2 the present invention proposes, this device has electronic circuit component and protective layer,
The sectional view of a kind of device that Fig. 3 the present invention proposes, this device has electronic circuit component and the shell with protective layer,
The sectional view of a kind of device that Fig. 4 the present invention proposes, this device have electronic circuit component with protective layer and the shell with inboard protective layer,
The sectional view of a kind of device that Fig. 5 the present invention proposes, this device have the electronic circuit component with protective layer and have the shell of outside protective layer,
The sectional view of a kind of device that Fig. 6 the present invention proposes, this device have the electronic circuit component with protective layer and have the shell that its space is filled.
The electronic device that the present invention proposes has a kind of appearance protective layer, and this protective layer has gradient The form of layer. According to this, this protective layer is covered with this device at least in part. This protective layer is at it Have different chemical material characteristics and/or physical material characteristic on the thickness, these characteristics basically Change each other continuously or quasi-continuously. Gradient layer has very big advantage, is exactly protective layer Characteristic can so be regulated widely, so that it has each for certain selected purposes Plant optimum performance.
Device can be a shell that is used in particular for electronic device, or an electronic device Or component, or other entities with matcoveredn. Below will be with regard to the microelectronics skill The device that art is used is described the present invention. The present invention certainly has more than and is limited to above-mentioned use field, But also can be used for some other purpose, namely every proposition requirement of similarity is particularly considered and is adhered to The place of power and/or sealing can be used.
The device that the present invention proposes is preferentially covered with a kind of protective layer at more such positions at least Lid has the abutment at these positions, and the boundary seam between each device portions is particularly arranged, There is electric contact to pass through the lead-in wire of shell, the electric contact of lead on microelectronic chip arranged, perhaps also Other positions that must consider device are coating in addition, wetly on these positions, gas And/or other harmful substances to enter the height infiltration of device inside dangerous or contact is dangerous, and/or also must Consider more such positions of device, they might be subjected to the effect of above-mentioned substance especially Infringement. Protective layer also can cover or seal this device fully.
A special advantage of the device that the present invention proposes is that protective layer is to produce simply Come out. If protective layer has a kind of polymer at least partly, then to the device of microelectric technique Part is favourable. Because protective layer is a kind of gradient layer, so can show in a simple layer Reveal specific inorganic and organic performance. Favourable part is, and is superimposed with those dependence commonly used The layer that separates that ground deposition the is different and multilayer system that forms is opposite does not exist in protective layer inside Interface. Protective layer changes its performance quasi-continuously on its thickness. Therefore, can not occur Pollution on the interior interface of protective layer inside. Protective layer especially can be with basically single Continuous deposition process is produced. Protective layer can be especially well be complementary with its substrate, In the following cases especially true: protective layer at first has organic performance, spy in developmental process Not little hardness and/or big elasticity, have the nothing that increases progressively at its thickness then quasi-continuously Machine performance, particularly big hardness and/or big sealing.
The method of utilizing the present invention to propose can simply and advantageously successfully deposit above-mentioned the sort of Gradient layer. Its special advantage is: when the organic aspect of deposition, each organic polymer composition is not Need to divide other cross-linking step. Favourable part also has: the CVD method that adopts the present invention to propose (is changed Learn vapor deposition method), can control well sedimentary condition. Advantageous particularlyly be: heavy at protective layer In the long-pending process, THICKNESS CONTROL can realize very simply. Like this, the thickness of protective layer can Accurately measure, especially can keep its thickness very little. Common polymer protective layer, particularly Semiconductor devices package aspect adopts, and its thickness that has is approximately 10 μ m; And the present invention The common protective layer thickness that the device that proposes has only is about 0.1 μ m altogether to about 1 μ m.
Depict a kind of electronic device that the present invention proposes among Fig. 1, it partly has an appearance protective layer.A microelectronic circuit component 1 by common mode, uses a kind of sticky object 2 to be arranged on the bottom 3 of lead frame 9.Microelectronic circuit component 1 on the contact point 6 that has pressure welding silk 4 with being electrically connected that the electric connection of lead frame 9 is fixed.Circuit element 1 preferably has a kind of common passivation layer 5, with the outer surface of covering circuit element 1.Here, for example the accurate layout of circuit element 1, lead frame 9, presumable fin and/or pressure welding silk 4 is unessential, similarly, no doubt is suitable as the existence of passivation layer 5, but for the device that the present invention proposes not necessarily.Protective layer 7 is covered with the most responsive part on the surface of circuit element 1, and particularly contact point 6.Do not draw other outer cover in the figure respectively, particularly do not draw shell, this shell can protect microelectronic circuit component 1 not to be subjected to the influence of environment.
Because protective layer 7 is covered with the surface of the contact point 6 of circuit element 1, therefore a special sensitive part of protection device advantageously prevents moisture vapour transmission with emphasis.For example under the condition of wetly existence, at contact point 6 places, can constitute a kind of like this electronic component, this a electrode is made of the joint that electrically contacts of microelectronic circuit component, its another electrode is made of joint line, and its electrolyte then is made of the water that may exist.The life-span of a device can be very limited because of a kind of like this electrochemical element.As time goes on contact point 6 can corrode, and the high ohm that can therefore become, perhaps even be damaged.
In Fig. 2, schematically draw a similar layout, particularly be provided with a circuit element 1, a bottom 3 and an electric wire framework 9; A shell 8 is only delineated out.Have only the wiring of lead frame 9 outwards outstanding by shell 8.This layout is similar to the layout shown in Fig. 1.Protective layer 7.1 best device of forming by microelectronic circuit component 1, presumable fin 2, support sector 3 of package almost entirely in Fig. 2.Particularly connecting line 4 and be in connecting line 4 and microelectronic circuit component 1 between contact point 6 usefulness protective layers 7.1 covered.Its advantage is: microelectronic circuit component 1 has obtained protection, can better prevent the influence of moisture and/or the infection that are harmful to.Protective layer 7,7.1 also can only partly cover this device, as shown in fig. 1, in this case, particularly microelectronic circuit component 1 at least covered partly.So just can prevent that moisture from penetrating in the scope of contact point 6 or penetrate in the scope of contact point 6 of corresponding integrated printed conductor and/or circuit element 1.
In view of moisture resistance, the problem of an especially severe is electric wiring the drawing by shell 8 of lead frame 9.Each drilling point is to make moisture and/or gas infiltrate especially easily, and all the more so especially in the following cases: shell wall is very thin, particularly is thinner than 1mm, and/or the wiring quantity of lead frame is very big, and/or size of devices is very big, particularly greater than 1 * 2cm 2This situation can be improved, and its measure is that the wiring that is in by the lead frame 9 in drilling point 9.1 scopes of shell 8 is applied a protective layer 7.1.If protective layer 7.1 is so designed, make it can make protective layer 7.1 closely touch sheathing material especially, that is very favourable.This point can accomplish preferentially that its measure is that the contact-making surface of protective layer 7.1 has organic performance, promptly is similar to the performance of the character of sheathing material.The result who does like this is: can reduce the thermal stress influence between protective layer 7.1 and the shell 8 on the one hand, can improve the adhesive force between these two parts on the other hand, thereby and stop moisture to penetrate into the inside of shell 8.
Show bright favourable design among Fig. 3, design according to this, a kind of layout as shown in Fig. 1 or 2 is placed in the shell 8, and particularly in plastic casing, this shell should overlap a front cover electronic circuit component 1, and protects it to avoid the influence of environment.The electronic circuit component 1 that shell 8 complete packages have assembled, this element is assembled according to shown in Fig. 1 and 2.In above-mentioned example, protective layer 7.1 is being sealed the device that the bottom constituted by circuit element 1, connecting line 4 and lead frame 9 fully.But a kind of like this device can also be arranged, and on this device, as shown in Figure 1, circuit element 1 only has indivedual positions to be covered by protective layer.The situation of outwards drawing of the line of lead frame 9 is only schematically drawn in the drawings.Shell 8 also can have other designs, for example particularly has the arrangement as the integral fin of a part of outer casing bottom.
In Fig. 3, shell 8 is only illustrated as the thin-walled big envelope.But, the space 10 of shell 8 inside being filled, also is favourable, and same a kind of plastic substance of the most handy formation shell 8 is filled.Another kind of favourable filler for example is a kind of protective gas such as argon gas or nitrogen, and/or a kind of hygroscopic agent, and/or the silicone filler.The filling in space 10 can also reduce unwished-for moisture diffusion and/or condensation in the shell 8 by way of parenthesis for protective layer.In any case, in the device production process, be trapped in the moisture of shell 8 inside, must be by the filling in space 10 be driven away away it from enclosure when closure 8.
Shell 8 can advantageously be produced by disposable molded step, but also can be divided into several independent processes is engaged shell 8 and is formed, particularly will after assembling microelectronic circuit component 1, just install on the lower case of shell 8, and it and this lower case will be coupled together as the cap of shell 8 parts.
The solution that the present invention proposes; also can be applicable to the shell of other types; the particularly shell of pressure injection, metal shell and/or ceramic package; because protective layer 7 can protect microelectronic circuit component 1 to prevent that moisture from infiltrating and harmful substance enters especially in the following cases especially well: above-mentioned microelectronic circuit component 1 is sealed by one of above several shells of enumerating, and protective layer directly is arranged on this circuit element.If electronic device at least some particularly can infiltration gas or the junction point of moisture all protected seam 7 cover, then protective layer just can play particularly advantageous effect.
Draw a kind of structure of the electronic device of the present invention's proposition among Fig. 4, similar with structural shape shown in 3 to Fig. 2, by this structure, shell 8 inboards are all covered by a protective layer 7.2 basically fully at cap and bottom.The possible filler in the space 10 of shell 8 does not further show bright in the drawings, but still can have described those advantages at Fig. 3.
This shell 8 is preferably produced as follows: cap and outer casing underpart are on being respectively formed at beyond the inboard behind the shell seal; the method that adopts the present invention to propose applies a protective layer 7.2, and outer casing underpart has one and has been molded in lead frame 9 wherein and has been in respective electrical leads on the drilling point 9.1 in the casing frame.In the case, lead frame 9 be preferably in be used for circuit element 1 hold a little on can be covered.Then circuit element 1 is installed, and be electrically connected with the electric wiring of lead frame 9, this circuit element is covered at least partly or fully as shown in FIG. with a kind of intrinsic protective layer 7.1 in advance.If shell 8 is the complete coating of side within it, so at the protective layer that just can abandon under the minority particular case on the circuit element 1.The space 10 of shell 8 inside also can keep not occupied state, to reduce producing cost, especially under the situation that microelectronic circuit component 1 is covered by a protective layer 7.1 fully, more can do like that.
At drilling point 9.1 places, as shown in the figure, shell can link to each other with protective layer 7.1, even can also directly link to each other with the wiring of lead frame 9.
A kind of structure of supporting comparison of showing the electronic device that bright the present invention proposes among Fig. 5; have a shell 8, microelectronic circuit component 1, bottom 3 and one and have the lead-in wire that occupy between circuit element 1 and the lead frame 9 and the lead frame 9 of connecting line 4; by this structure, shell 8 is covered by a protective layer 7.3 in its outside.The said structure particularly advantageously very debatable electrical lead of sealed guide framework 9 passes through a little.Here, the circuit element 1 that is in enclosure itself also can have a protective layer 7.1, and this protective layer is covered with circuit element 1, bottom 3, connecting line 4 fully.If protective layer 7.3 is covered with shell 8 outsides, can certainly abandon the separately protected layer 7.1 on the circuit element.Particularly the dangerous drilling point 9.1 that is subjected to of shell 8 is protected with protective layer 7.3.Here; protective layer 7.3 is preferably so designed; be its one side outwardly be as much as possible moisture-resistant with hard; it and lead frame 9 and shell 8 and/or with protective layer 7.1 contacted one sides then be soft as far as possible with flexible, to reach and its suitable purpose of uneven substrate that constitutes by the heterogeneity material.
Preferably can particularly be filled with a kind of suitable filler 11 by way of parenthesis at shell interface and the space 10 that has between the device of circuit element 1 with drier and/or protective gas.This point is seen shown in Fig. 6.The filler 11 that fills up the space is also shown in this figure.The deployment scenarios of each element conforms to foregoing example basically in shell 8.In shell 8 or the supplementary protection layer 7 in the outside do not draw respectively, but preferably this protective layer can be arranged.
Should avoid those injurious effects reliably, for example between different material owing to forming the electrochemical reaction that electrochemical cell (Zelle) produces, perhaps may be present in the cracking that the space that is full of by water vapour in the filler takes place when being heated, particularly because when circuit element 1 soldering and/or when work the cracking that taken place of the loss heat that produces, electronic device can be easy to reach the temperature more than 100 ℃ in the case.What should give special priority for is with the space 10 of moulding material filling shell 8, especially to go to fill with 8 same materials in order to shaping of shell.The priority structure of the protective layer 7.1 on the circuit element 1; and/or the priority structure of the protective layer on the inboard shell wall 7.2 is: the surface towards filler 11 of protective layer 7.1 and/or protective layer 7.2 is soft with resilient, so that be connected with filler 11 as far as possible well.This point can help the effect of the prevention moisture vapour transmission of filler 11 especially by way of parenthesis.Therefore, can advantageously avoid when filling space 10, forming little space.
The present invention can be particularly advantageous for the accurate sealed enclosure of microelectronic component, especially has under the situation of thin-walled plastic shell of big quantity lead-in wire all the more so in use.Such shell for example is the TQFP-shell, and its standard area is 28 * 28mm 2, and have lead-in wire more than 100.Such shell is affected very easily for the moisture vapour transmission along the lead frame lead-in wire, is corroded easily on the contact point 6 between connecting line 4 and the microelectronic circuit component 1.Therefore, the sealing of the lead-in wire path by shell wall has just become a king-sized problem, but the solution of utilizing the present invention to propose can be improved this point greatly.
Particularly advantageous way is, used device is immersed in the mordant environment, and as the particularly entrapped transducer of transducer is for example immersed in the oil, like this according to the present invention, these electronic devices outsides have a protective layer fully.Therefore, this electronic device, particularly transducer are protected and improve the ability that it resists the corrosive atmosphere condition greatly.
In first favourable structure, protective layer 7.1,7.2,7.3 all is siliceous.Method according to the present invention proposes on the electronic device that protective layer 7.1 is deposited, particularly is deposited on the microelectronic circuit component 1 that is housed to or has packed in the shell 8.A particularly advantageous development is, protective layer 7.3 is deposited on the outside of mounted and the shell 8 that sealed.According to this situation, by example shown in each accompanying drawing, the available another kind of protective layer 7.2 in the inside of shell 8 is covered.
With a kind of liquid parent material, hexamethyl first silicon ether (HMDSO) preferably, with the about 0～50ml/h of tiny flow quantity (milliliter/hour), preferably 0.1ml/h to 50ml/h, particularly 5ml/h to 10ml/h are through a flow adjuster, be sent to first vacuum chamber, and vaporized at this, in this, from the liquid stream reaction of formation gas that regulates.The advantage of doing like this is, reacting gas can be added in the process chamber and the carrier gas that do not need to add.Thereby make processing procedure comparatively simple, because when observed pressure and/or observation flow, do not go to consider carrier gas.In addition, also can avoid carrier gas that protective layer and/or electronic device are caused harmful pollution.
Reacting gas flow arrives the process chamber of CVD-coating apparatus (CVD=chemical vapor deposition) from cup.Here, reaction gas pressure is adjusted between 0.1mbar and the 1.5mbar, preferably 0.2mbar.The electronic device for the treatment of coating is placed in the reaction zone.Available thermal energy and/or electromagnetic energy be to this electronic device loading in processing, with this device of suitable heating, thereby improves the formation of coat layer and/or improve the adhesive force of coat layer.In coating procedure with voltage to the electronic device loading, also be favourable.The substrate bias-voltage be 0 and-500 volts be favourable.To the favourable treatment temperature of electronic device between 20 ℃ and about 200 ℃.Temperature upper limit preferably determines according to the kind that forms shell 8 used plastics, and/or as required in addition the circuit element 1 of coating determine.
In the scope of reaction zone, preferably utilize the electromagnetic energy effect to impel the reacting gas chemically reactive.Favourable plasma excitation frequency is between 10kHz and 10Ghz.Preferably use the frequency of 13.56Mhz.According to difference to the protective layer performance demands of need depositions, can add another kind of reacted constituent at least to reacting gas by way of parenthesis, preferably add through it self regulating system.A kind of favourable gas flux of this reacted constituent 0 and 1000sccm/min (standard cubic centimeters per minute) between, 0～200sccm/min preferably, in this, the nominal value time interval that the gas through-current capacity is preferably in the entire process time goes up and promotes.The interpolation of other reacted constituents is best to be carried out according to the mode that changes reacted constituent concentration on the reaction time at least in time and constantly.
Additional reacted constituent is argon gas and/or nitrogen preferably, and/or oxygen, and/or HMDSN (hexamethyl first silicon ether).Use 60～3600 seconds common processing times, preferably 1000～1500 seconds, just can be deposited as protective layer 7 as gradient layer.
Before deposition; the surface that utilizes a kind of general plasma purification method to handle electronic device, this also is very favourable, in this; with ion plasma several seconds to 5 minute that electronic device places a kind of not cambial gas, improve the adhesive force of protective layer whereby.
According to first example, the CVD-method of using the plasma support at first deposits a kind of siliceous polymer.Therefore, on electronic device, at first form a soft polymeric layer.Be preferably in that this polymeric layer is realized is crosslinked, thereby do not need the cross-linking step of adding.
In deposition process, little by little in reative cell, add ever-increasing amount of oxygen, be preferably between 0～1000sccm/min, especially good between 0-200sccm/min.The layer that forms little by little changes its performance, forms a kind of silicon oxide layer of moisture-resistant gas of densification from a kind of siliceous polymer.
Though polymeric layer can not fully seal in case the influence in stop ring border the electronic device surface because density is very little relatively; but polymeric layer still can be flexiblely surperficial suitable with electronic device; and protective layer 7 and electronic device particularly circuit element 1 have under the situation of different elastic performances, can make protective layer 7 have good adhesive force.The position outwardly of protective layer 7 is the compact silicon oxide layer on the contrary, and this one silica layer particularly to moisture vapour transmission, has very high resistance to gas permeation.Although the elastic performance on silicon oxide layer and electronic device surface may be different; but silica is still well at the lip-deep adhesive force of electronic device, and this is because the polymer position of the nearby electron device of protective layer 7 can compensate on the elasticity and/or the difference that may exist on thermal expansivity.Simultaneously, polymeric layer is a kind of well attached substrate to the silica that generates.
The another kind of favourable development of gradient protective layer 7 is a kind of orders of the silica of the CVD method deposition supported with the CVD method and/or with plasma; the thickness that silica had is preferably between 0.1 μ m and 1 μ m; in this; protective layer is transformed into unbodied silicon from oxide quasi-continuously in reaction zone under the condition that reaches the oxygen content reduction; its thickness is preferably about 0.1 μ m; after this in the protective layer continued growth; its thickness preferably 0.1 μ m is reaching the further carborundum that is transformed into of the condition lower protective layer that adds a kind of carbonaceous gas to about 1 μ m quasi-continuously.The advantage of this gradient protective layer is: fine and close silicon carbide layer district combines with the very good electrical insulating capacity in the silicon oxide layer district of gradient layer.Between above-mentioned two floor districts preferably the effect in thin amorphous si-layer district be: initial oxide layer areas that forms and carbide lamella district can not chemically reactives in deposition process, and vice versa.
Reverse sequence is favourable equally.Favourable gradient order also is: silica-thin amorphous silicon-amorphous carbon, silica-thin amorphous silicon-thin amorphous carbon-silicon carbide, the carbon of the amorphous silicon-dimantine of silica-thin.Thin here word means: this floor district is arranged that as the buffering area between two floor districts in addition of gradient layer the thickness of this buffering area preferably only is the part of the thickness in other floor districts, preferably 10% or 20%.According to sedimentation, replace oxygen or except that oxygen, preferably add corresponding suitable gas for example carbonaceous gas as reacted constituent.
The said sequence in each floor district of gradient protective layer has pure inorganic material character.Certainly, a kind of gradient protective layer with pure organic material character also can deposit out.For this reason, at first can deposit the one layer of polymeric layer, the most handy HMDSO does not preferably add oxygen as liquid parent material.The layer that forms has the polymer chain of certain-length.Then oxygen content is only brought up to such degree, make polymer chain become short.So form a strong crosslinked polymeric layer district with short polymer chain.But oxygen content must not be brought up to the degree that the silicon oxide layer district may be formed.Big advantage is that the polymeric layer district with short chain compares with the polymeric layer of common long-chain, has king-sized hardness.
Protective layer 7 on the electronic circuit component 1 in a shell 8 especially, advantageously, protective layer 7 has following layout: an inorganic layer district, particularly silica are set between two polymeric layer districts.The effect in inorganic layer district mainly is: help electric insulation; And/or as the moisture vapour transmission barrier layer, its thickness is preferably about 1 μ m; The polymeric layer district of following nearby electron device can improve protective layer adaptive to the electronic device surface; Can improve from electronic device polymeric layer district far away protective layer to shell a certain may molding substance adaptive.The thickness in polymeric layer district is more preferably greater than the thickness in inorganic layer district, and is the most suitable to be approximately 5 μ m especially.Like this, the benefit that can obtain is, can prevent the delamination of shell on the one hand, can prevent to form in the enclosure the space on the other hand, and this space may cause producing fearful popcorn effect.

Claims (33)

1. the device that has protective layer; this protective layer is covered with this device at least partly; and itself have different chemistry and/or a physical property; it is characterized in that: protective layer (7.1; 7.2; 7.3 constitute by single layer, and on its thickness, have different quasi-continuously chemistry and/or physical material performance.
2. device as claimed in claim 1 is characterized in that: protective layer (7.1,7.2,7.3) from device person far away than having bigger hardness and/or elasticity and/or moisture resistance from the nearly person of device.
3. device as claimed in claim 1 or 2 is characterized in that: protective layer (7.1,7.2,7.3) from the nearly person of device than having bigger hardness and/or elasticity and/or anti-warm nature from device person far away.
4. as claim 1,2 or 3 described devices, it is characterized in that: protective layer (7.1,7.2,7.3) has organic performance from device person far away, and nearly person has inorganic performance from device.
5. as claim 1,2 or 3 described devices, it is characterized in that: protective layer (7.1,7.2,7.3) has organic performance from the nearly person of device, and person far away has inorganic performance from device.
6. as each or several described devices of above claim, it is characterized in that: protective layer (7.1,7.2,7.3) has on its thickness by the formed order of organic and inorganic and organic performance.
7. as each or several described devices of above claim, it is characterized in that: protective layer (7.1,7.2,7.3) has on its thickness by order inorganic, organic and that the inorganic nature the subject of knowledge and the object of knowledge forms.
8. as each or several described devices of above claim 1 to 6, it is characterized in that: protective layer (7.1,7.2,7.3) only has the organic material performance.
9. as each or several described devices of above claim 1 to 6, it is characterized in that: protective layer (7.1,7.2,7.3) only has the inorganic material performance.
10. as each or the device described in several of above claim, it is characterized in that: device is covered fully with protective layer (7.1,7.2,7.3).
11. as each or the device described in several of above claim, it is characterized in that: device has a microelectronic circuit component (1), this device uses protective layer (7.1) to be covered at least partly.
12. as above claim each or multinomial described in device; it is characterized in that: device has a microelectronic circuit component (1), and this device is covered by protective layer (7.1) at least in its surface and in the zone of the electrical pickoff (6) on circuit element (1).
13. as each or multinomial described device of above claim, it is characterized in that: device has a shell (8); The outside of shell (8) and/or inboard are covered by protective layer (7) in the position at junction point at least partly.
14. as each or multinomial described device of above claim, it is characterized in that: device has a shell (8) and a microelectronic circuit component (1); The outside of shell (8) and/or inboard are covered by protective layer (7.2,7.3); Circuit element (1) is covered by protective layer (7.1) fully.
15. as each or multinomial described device of above claim, it is characterized in that: device has a shell (8) and a microelectronic circuit component (1); The outside of shell (8) and/or inboard are covered by protective layer (7.2,7.3); Circuit element (1) upward and on an outer surface is covered by protective layer (7.1) at contact point (6) at least.
16. as each or multinomial described device of above claim, it is characterized in that: device has a shell (8) and a microelectronic circuit component (1) that has the lead frame (9) with contact; The contact of lead frame (9) is covered by protective layer (7.1) on the position of the drilling point that passes through shell (8) (9.1) of lead frame (9) at least.
17. as each or multinomial described device of above claim, it is characterized in that: the thickness that protective layer (7.1,7.2,7.3) is had is between 0.1 μ m and 10 μ m.
18. the device manufacture method of protective layer; particularly as claim 1 or its dependent claims one or multinomial described device manufacture method with protective layer; it is characterized in that: a kind of first reacted constituent that will be in a liquid state controlledly is directed in the region of no pressure; vaporization here and essentially no carrier gas ground arrive the reaction zone of a vacuum equipment; here under heat energy and/or electromagnetic energy effect, react and form a kind of product with second reacted constituent that has a kind of component at least; and be deposited on the surface for the treatment of coating; in this; in deposition process,, on the thickness of the layer of growing up, change the physics and/or the chemical property of layer gradually by the change that control is arranged to the composition of reacting gas.
19. method as claimed in claim 18 is characterized in that: in the deposition process of product, add oxygen to reacting gas.
20., it is characterized in that: in deposition process, add the oxygen that constantly changes concentration as claim 18 or 19 described methods.
21., it is characterized in that: act on reaction zone with high frequency electromagnetic radiation as claim 18,19 or 20 described methods.
22. as each or several described methods of above claim 18 to 21, it is characterized in that: reacting gas has argon gas.
23. as each or several described methods of above claim 18 to 22, it is characterized in that: reacting gas has nitrogen.
24. as each or several described methods of above claim 18 to 23, it is characterized in that: used a kind of reaction gas pressure is between 0.1mbar and 1.5mbar.
25. as each or several described methods of above claim 18 to 24, it is characterized in that: reacting gas has HMDSN.
26. as each or several described methods of above claim 18 to 25, it is characterized in that: liquid parent material adds with the flow between 0ml/h and 50ml/h.
27. as each or several described methods of above claim 18 to 26, it is characterized in that: coated surface will be heated in coating procedure at least.
28. as each or several described methods of above claim 18 to 27, it is characterized in that: at least will be in coating procedure with high-frequency electrical magnetic energy to coated surperficial loading.
29. as each or multinomial described method of above claim 18 to 28, it is characterized in that: at least will be in coating procedure with voltage to coated surperficial loading.
30. as each or multinomial described method of above claim 18 to 29, it is characterized in that: microelectronic circuit component (1) is coated at least partly.
31. as each or multinomial described method of above claim 18 to 30, it is characterized in that: the shell (8) of microelectronic circuit component (1) is coated at least partly.
32. as each or multinomial described method of above claim 18 to 31, it is characterized in that: having joint, to outnumber the shell (8) of 100 microelectronic circuit component (1) coated at least partly.
33. as each or multinomial described method of above claim 18 to 32, it is characterized in that: the plastic casing (8) of microelectronic circuit component (1) is coated at least partly.
CN98808247A 1997-08-20 1998-08-07 Component with protective layer and method for producing protective layer for component Pending CN1267394A (en)

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DE19736090.4 1997-08-20
DE19736090A DE19736090B4 (en) 1997-08-20 1997-08-20 Protective layer device and method for producing a protective layer for a device

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JP (1) JP2002515640A (en)
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Cited By (4)

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US11168054B2 (en) 2015-12-18 2021-11-09 Dsm Ip Assets B.V. Biaromatic compounds, which are vitamin D analogs
CN107727302A (en) * 2016-08-11 2018-02-23 罗伯特·博世有限公司 Pressure measurement cell and for coat and contact measuring unit carrier method
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