CN1266658C - Active organic light-emitting diode picture element structure - Google Patents
Active organic light-emitting diode picture element structure Download PDFInfo
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Abstract
The present invention relates to a picture element structure for an active type organic light emitting diode, for example, the picture element structure for an active type organic light emitting diode is composed of an organic light emitting diode, a data configuration wire, a scanning configuration wire, a switch film transistor, a drive film transistor and a reservoir capacitor, wherein the film transistor is provided with a first lightly adulterated draw electrode, the drive film transistor is provided with a second lightly adulterated draw electrode, and the ion adulterated concentration of the second lightly adulterated draw electrode is larger than that of the first lightly adulterated draw electrode. The leakage current in the switch film transistor can be reduced by the picture element structure for an active type organic light emitting diode, the kinking effect of the drive film transistor can be improved, and the relatively better display effect can be provided.
Description
Technical field
The present invention relates to a kind of image element structure of active organic light-emitting diode, particularly relate to the thin film transistor (TFT) that a kind of application has shallow doping drain, can effectively reduce the leakage current of switching thin-film transistor, but and the output voltage of storage-stable capacitor, and can improve the kink effect of drive thin film transistors when carrying out the electric current and voltage operation, and can improve the fiduciary level of drive thin film transistors, and then can make Organic Light Emitting Diode have the image element structure of the active organic light-emitting diode of preferable display effect.
Background technology
Along with the prosperity of Information technology, of all kinds as information equipments such as computing machine, mobile phone, PDA(Personal Digital Assistant) and digital cameras, all constantly weed out the old and bring forth the new.In these information equipments, display is being played the part of critical role all the time, and flat-panel screens (Flat Panel Display) is little by little to receive an acclaim owing to have the characteristic of slimming, lightweight and power saving.In various flat-panel screens, Organic Light Emitting Diode (0rganic Light Emitting Diode, OLED) display because have that the visual angle is wide, color contrast is effective, frivolous, response speed reaches low cost and other advantages soon, so be very suitable for the application as displays such as electronic clock, mobile phone, personal digital assistant and digital cameras.The organic light emitting diode display initial stage all drives (PassiveDrive) based on the passive type of low order, yet owing to can reduce significantly in the luminescence efficiency of passive type driven unit and serviceable life along with the increase of display sizes and resolution, thereby (Organic Light Emitting Diode, OLED) display develops towards the direction of active driving (ActiveDrive) to order about Organic Light Emitting Diode.
Seeing also shown in Figure 1ly, is the synoptic diagram of the image element structure of existing known a kind of active organic light-emitting diode.The image element structure 100 of this active organic light-emitting diode comprises one scan distribution 102, a data (being data) distribution 104, a switching thin-film transistor 110, a drive thin film transistors 120, a reservior capacitor 130 and an Organic Light Emitting Diode 140.Wherein, the demonstration GTG of the image element structure 100 of active organic light-emitting diode is determined by the voltage on the data distribution 104, when scan wiring 102 actuating switch thin film transistor (TFT)s 110, voltage on the data distribution 104 can be by the gate (not shown) of switching thin-film transistor 110 drive thin film transistors 120, driving the required electric current Organic Light Emitting Diode 140 of flowing through, and produce different demonstration GTGs by the different magnitude of voltage of input.On the other hand, when switching thin-film transistor 110 is opened, reservior capacitor 130 is actions of carrying out a charging, to store the voltage of input, and when switching thin-film transistor 110 is closed, reservior capacitor 130 just carries out the action of a discharge, is the state of conducting to keep drive thin film transistors 120, makes Organic Light Emitting Diode 140 be kept original demonstration briliancy.
Please consult shown in Figure 1 again, switching thin-film transistor 110 and drive thin film transistors 120 can be divided into amorphous silicon (amorphous-Silicon according to the material of channel region usually, be called for short a-Si) thin film transistor (TFT) and polysilicon (poly-Silocon, be called for short p-Si) thin film transistor (TFT), wherein polycrystalline SiTFT is compared to amorphous silicon film transistor, have advantages such as the little and electron mobility of consumed power is big, though the process temperatures of early stage polycrystalline SiTFT is higher, and make the selection of base material be subjected to significantly limiting, but low temperature polycrystalline silicon (low temperature poly-silicon along with development in recent years, abbreviate LTPS as) process technique of thin film transistor (TFT), made it become main flow in the active element gradually.
Yet, when adopting polycrystalline SiTFT as switching thin-film transistor, because its channel region is a polysilicon material, therefore when switching thin-film transistor is closed, the phenomenon of leakage current still may take place in channel region, make the stored voltage of reservior capacitor change, and then the stability when influence the Organic Light Emitting Diode demonstration.In addition, seeing also shown in Figure 2ly, is the driving voltage of drive thin film transistors of existing known polysilicon kenel and the graph of a relation of transmission current.The relation curve of driving voltage as shown in FIG. (Vds) and transmission current (Id), it has the problem of a kink effect (KinkEffect) in the saturation region, that is along with the change of driving voltage, can't keep a stable numerical value by the transmission current of drive thin film transistors, make fiduciary level (Reliability) variation of drive thin film transistors, and then influence the display effect of Organic Light Emitting Diode.
This shows that the image element structure of above-mentioned existing active organic light-emitting diode still has many defectives, and demands urgently further being improved.The problem that exists for the image element structure that solves active organic light-emitting diode, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that the image element structure of above-mentioned existing active organic light-emitting diode exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, actively studied innovation, in the hope of founding a kind of image element structure of novel active organic light-emitting diode, can improve the image element structure of existing active organic light-emitting diode, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective of the image element structure existence of existing active organic light-emitting diode, and provide a kind of image element structure of active organic light-emitting diode of new structure, technical matters to be solved is to make it have higher luminous degree of stability and fiduciary level, and preferable display effect can be provided, thereby be suitable for practicality more, and have the value on the industry.
Purpose of the present invention and to solve its technical problem underlying be to adopt following technical scheme to realize.The image element structure of a kind of active organic light-emitting diode that proposes according to the present invention, it comprises at least: an Organic Light Emitting Diode; One data distribution; The one scan distribution; One switching thin-film transistor, has one first gate, one first source electrode, one first drain, one first passage district and one first shallow doping drain, wherein this first source electrode and this first drain are the both sides that are disposed at this first passage district, this first source electrode comprises one first source area and one first source metal, this first drain comprises one first drain area and one first drain metal level, and this first shallow doping drain is to be disposed between this first source area and this first passage district and between this first drain area and this first passage district, and this first gate is that correspondence is disposed at this top, first passage district, this first gate is to be coupled to this scan wiring, and this first source electrode is to be coupled to this data distribution; One drive thin film transistors, has one second gate, one second source electrode, one second drain, one second channel district and one second shallow doping drain, wherein this second source electrode and this second drain are the both sides that are disposed at this second channel district, this second source electrode comprises one second source area and one second source metal, this second drain comprises one second drain area and one second drain metal level, and this second shallow doping drain is to be disposed between this second source area and this second channel district and between this second drain area and this second channel district, and this second gate is that correspondence is disposed at this top, second channel district, this second gate is to be coupled to this first drain, and this second drain is to be coupled to this Organic Light Emitting Diode, and the ion doping concentration of this second shallow doping drain is greater than the ion doping concentration of this first shallow doping drain; And a reservior capacitor, it is and this first drain and this second gate electrically connect.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
The image element structure of aforesaid active organic light-emitting diode, wherein said switching thin-film transistor are to be P type low-temperature polysilicon film transistor.
The image element structure of aforesaid active organic light-emitting diode, wherein said drive thin film transistors are to be P type low-temperature polysilicon film transistor.
The image element structure of aforesaid active organic light-emitting diode, wherein said switching thin-film transistor are to be N type low-temperature polysilicon film transistor.
The image element structure of aforesaid active organic light-emitting diode, wherein said drive thin film transistors are to be N type low-temperature polysilicon film transistor.
Purpose of the present invention and solve its technical problem underlying and also realize by the following technical solutions.The image element structure of a kind of active organic light-emitting diode that proposes according to the present invention, it comprises at least: an Organic Light Emitting Diode; One data distribution; The one scan distribution; One switching thin-film transistor, has one first gate, one first source electrode, one first drain, one first passage district and one first shallow doping drain, wherein this first source electrode and this first drain are the both sides that are disposed at this first passage district, this first source electrode comprises one first source area and one first source metal, this first drain comprises one first drain area and one first drain metal level, and this first shallow doping drain is to be disposed between this first source area and this first passage district and between this first drain area and this first passage district, and this first gate is that correspondence is disposed at this top, first passage district, this first gate is to be coupled to this scan wiring, and this first source electrode is to be coupled to this data distribution; One drive thin film transistors, has one second gate, one second source electrode, one second drain, one second channel district and one second shallow doping drain, wherein this second source electrode and this second drain are the both sides that are disposed at this second channel district, this second source electrode comprises one second source area and one second source metal, this second drain comprises one second drain area and one second drain metal level, and this second shallow doping drain is to be disposed between this second source area and this second channel district and between this second drain area and this second channel district, and this second gate is that correspondence is disposed at this top, second channel district, this second gate is to be coupled to this first drain, and this second drain is to be coupled to this Organic Light Emitting Diode, and the length of this first shallow doping drain is greater than the length of this second shallow doping drain; And a reservior capacitor, it is and this first drain and this second gate electrically connect.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
The image element structure of aforesaid active organic light-emitting diode, wherein said switching thin-film transistor are to be P type low-temperature polysilicon film transistor.
The image element structure of aforesaid active organic light-emitting diode, wherein said drive thin film transistors are to be P type low-temperature polysilicon film transistor.
The image element structure of aforesaid active organic light-emitting diode, wherein said switching thin-film transistor are to be N type low-temperature polysilicon film transistor.
The image element structure of aforesaid active organic light-emitting diode, wherein said drive thin film transistors are to be N type low-temperature polysilicon film transistor.
Purpose of the present invention and solve its technical problem underlying and also realize by the following technical solutions.The image element structure of a kind of active organic light-emitting diode that proposes according to the present invention, it comprises at least: an Organic Light Emitting Diode; One data distribution; The one scan distribution; One switching thin-film transistor, has one first gate, one first source electrode, one first drain, one first passage district and one first shallow doping drain, wherein this first source electrode and this first drain are the both sides that are disposed at this first passage district, this first source electrode comprises one first source area and one first source metal, this first drain comprises one first drain area and one first drain metal level, and this first shallow doping drain is to be disposed between this first source area and this first passage district and between this first drain area and this first passage district, and this first gate is that correspondence is disposed at this top, first passage district, this first gate is to be coupled to this scan wiring, and this first source electrode is to be coupled to this data distribution; One drive thin film transistors, have one second gate, one second source electrode, one second drain and a second channel district, wherein this second source electrode and this second drain are the both sides that are disposed at this second channel district, this second source electrode comprises one second source area and one second source metal, this second drain comprises one second drain area and one second drain metal level, and this second gate to be correspondence be disposed at this top, second channel district, this second gate is to be coupled to this first drain, and this second drain is to be coupled to this Organic Light Emitting Diode; And a reservior capacitor, it is and this first drain and this second gate electrically connect.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
The image element structure of aforesaid active organic light-emitting diode, wherein said switching thin-film transistor are to be P type low-temperature polysilicon film transistor.
The image element structure of aforesaid active organic light-emitting diode, wherein said drive thin film transistors are to be P type low-temperature polysilicon film transistor.
The image element structure of aforesaid active organic light-emitting diode, wherein said switching thin-film transistor are to be N type low-temperature polysilicon film transistor.
The image element structure of aforesaid active organic light-emitting diode, wherein said drive thin film transistors are to be N type low-temperature polysilicon film transistor.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of image element structure of active organic light-emitting diode, and it is made of an Organic Light Emitting Diode, a data distribution, one scan distribution, a switching thin-film transistor, a drive thin film transistors and a reservior capacitor.Switching thin-film transistor for example has one first gate, one first source electrode, one first drain and one first shallow doping drain, and (Light Doped Drain, LDD), wherein first gate is to be coupled to scan distribution, and first source electrode is to be coupled to the data distribution.In addition, drive thin film transistors for example has one second gate, one second source electrode, one second drain and one second shallow doping drain, wherein second gate is to be coupled to first drain, and second drain is to be coupled to Organic Light Emitting Diode, and the ion doping concentration of the second shallow doping drain is different with the ion doping concentration of the first shallow doping drain.In addition, reservior capacitor is to electrically connect with first drain and second gate.
Described according to preferred embodiment of the present invention, the ion doping concentration of the second above-mentioned shallow doping drain is the ion doping concentration greater than the first shallow doping drain.In addition, switching thin-film transistor and drive thin film transistors for example can be all P type low-temperature polysilicon film transistor or be all N type low-temperature polysilicon film transistor.
Based on above-mentioned purpose, the present invention has proposed a kind of image element structure of active organic light-emitting diode again, and it is made of an Organic Light Emitting Diode, a data distribution, one scan distribution, a switching thin-film transistor, a drive thin film transistors and a reservior capacitor.Switching thin-film transistor for example has one first gate, one first source electrode, one first drain and one first shallow doping drain, and wherein first gate is to be coupled to scan distribution, and first source electrode is to be coupled to the data distribution.In addition, drive thin film transistors for example has one second gate, one second source electrode, one second drain and one second shallow doping drain, wherein second gate is to be coupled to first drain, and second drain is to be coupled to Organic Light Emitting Diode, and the length of the second shallow doping drain is different with the length of the first shallow doping drain.In addition, reservior capacitor is to electrically connect with first drain and second gate.
Described according to preferred embodiment of the present invention, the length of the first above-mentioned shallow doping drain is the length greater than the second shallow doping drain.In addition, switching thin-film transistor and drive thin film transistors for example can be all P type low-temperature polysilicon film transistor or be all N type low-temperature polysilicon film transistor.
Based on above-mentioned purpose, the invention allows for a kind of image element structure of active organic light-emitting diode, it is made of an Organic Light Emitting Diode, a data distribution, one scan distribution, a switching thin-film transistor, a drive thin film transistors and a reservior capacitor.Switching thin-film transistor for example has one first gate, one first source electrode, one first drain and one first shallow doping drain, and wherein first gate is to be coupled to scan distribution, and first source electrode is to be coupled to the data distribution.In addition, drive thin film transistors for example has one second gate, one second source electrode and one second drain, and wherein second gate is to be coupled to first drain, and second drain is to be coupled to Organic Light Emitting Diode.In addition, reservior capacitor is to electrically connect with first drain and second gate.
Described according to preferred embodiment of the present invention, above-mentioned switching thin-film transistor and drive thin film transistors for example can be all P type low-temperature polysilicon film transistor or be all N type low-temperature polysilicon film transistor.
Based on above-mentioned, the image element structure of active organic light-emitting diode of the present invention is to form a shallow doping drain in switching thin-film transistor and drive thin film transistors, solves the problem of existing known techniques poor display.In the image element structure of active organic light-emitting diode of the present invention, this shallow doping drain for example can have following several configuration mode:
(1), the ion doping concentration of first of the switching thin-film transistor shallow doping drain is less than the ion doping concentration of the second shallow doping drain of drive thin film transistors.
(2), the length of first of the switching thin-film transistor shallow doping drain is greater than the length of the second shallow doping drain of drive thin film transistors.
(3), only in switching thin-film transistor, form one first shallow doping drain.
Via as can be known above-mentioned, the image element structure of active organic light-emitting diode of the present invention, it is made of an Organic Light Emitting Diode, a data distribution, one scan distribution, a switching thin-film transistor, a drive thin film transistors and a reservior capacitor.Wherein switching thin-film transistor has one first shallow doping drain, and drive thin film transistors has one second shallow doping drain, and the ion doping concentration of the second shallow doping drain is the ion doping concentration greater than the first shallow doping drain.Can reduce leakage current in the switching thin-film transistor by the image element structure of this active organic light-emitting diode, and can improve the kink effect of drive thin film transistors, and a preferable display effect can be provided.
By technique scheme, the image element structure of active organic light-emitting diode of the present invention has the following advantages at least: it can effectively reduce the leakage current of switching thin-film transistor, but and the output voltage of storage-stable capacitor; In addition, the image element structure of active organic light-emitting diode of the present invention also can improve the kink effect of drive thin film transistors when carrying out the electric current and voltage operation, and can improve the fiduciary level of drive thin film transistors, and then can be so that Organic Light Emitting Diode has preferable display effect.
In sum, the image element structure of the active organic light-emitting diode of special construction of the present invention has higher luminous degree of stability and fiduciary level, and preferable display effect can be provided, thereby be suitable for practicality more, and has the value on the industry.It has above-mentioned many advantages and practical value, and in like product, do not see have similar structural design to publish or use and really genus innovation, no matter it structurally or bigger improvement all arranged on the function, have large improvement technically, and produced handy and practical effect, and the image element structure of more existing active organic light-emitting diode has the multinomial effect of enhancement, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is the synoptic diagram that has the image element structure of known a kind of active organic light-emitting diode now.
Fig. 2 is the driving voltage of drive thin film transistors of existing known polysilicon kenel and the graph of a relation of transmission current.
Fig. 3 is the synoptic diagram of a kind of image element structure of active organic light-emitting diode in the preferred embodiment of the present invention.
Fig. 4 is the diagrammatic cross-section of above-mentioned switching thin-film transistor.
Fig. 5 is the diagrammatic cross-section of above-mentioned drive thin film transistors.
Fig. 6 is the driving voltage of the drive thin film transistors with shallow doping drain of the present invention and the graph of a relation of transmission current.
100: the image element structure 102 of active organic light-emitting diode: scan wiring
104: data distribution 110: switching thin-film transistor
120: drive thin film transistors 130: reservior capacitor
140: Organic Light Emitting Diode
200: the image element structure 202 of active organic light-emitting diode: scan wiring
204: data distribution 210: switching thin-film transistor
211: 212: the first gates of substrate
214: the first source electrode 214a: first source area
214b: 216: the first drains of first source metal
216a: the first drain area 216b: the first drain metal level
217: channel region 218: gate dielectric layer
219: intermediate dielectric layer 219a: contact hole
219b: contact hole 220: drive thin film transistors
221: 222: the second gates of substrate
224: the second source electrode 224a: second source area
224b: 226: the second drains of second source metal
226a: the first drain area 226b: the first drain metal level
227: channel region 228: gate dielectric layer
229: intermediate dielectric layer 229a: contact hole
229b: contact hole 230: reservior capacitor
240: 250: the first shallow doping drains of Organic Light Emitting Diode
260: the second shallow doping drain L1, L2: length
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, its embodiment of image element structure, structure, feature and the effect thereof of the active organic light-emitting diode that foundation the present invention is proposed, describe in detail as after.
Seeing also shown in Figure 3ly, is the synoptic diagram of a kind of image element structure of active organic light-emitting diode in the preferred embodiment of the present invention.The image element structure 200 of this active organic light-emitting diode is made of an Organic Light Emitting Diode 240, a data distribution 204, one scan distribution 202, a switching thin-film transistor 210, a drive thin film transistors 220 and a reservior capacitor 230.Wherein, switching thin-film transistor 210 has one first gate 212, one first source electrode 214 and one first drain 216, and switching thin-film transistor 210 for example couples with scanning distribution 202 by first gate 212, and for example couples with data distribution 204 by first source electrode 214.In addition, drive thin film transistors 220 has one second gate 222, one second source electrode 224 and one second drain 226, and drive thin film transistors 220 for example couples with switching thin-film transistor 210 by second gate 222, and couples with Organic Light Emitting Diode 230 by second drain 226.In addition, reservior capacitor 230 is to electrically connect with first drain 216 of switching thin-film transistor 210 and second gate 222 of drive thin film transistors 220.
Seeing also shown in Figure 4ly, is the diagrammatic cross-section of above-mentioned switching thin-film transistor.This switching thin-film transistor 210, for example be to be a P type low-temperature polysilicon film transistor, it is for example for comprising a substrate 211, first gate 212, first source electrode (comprising one first source area 214a and one first source metal 214b), 214, first drain (comprising one first drain area 216a and one first drain metal level 216b), 216, one channel region (being channel region), 217, one gate dielectric layer 218, an intermediate dielectric layer (inter-layerdielectric layer) 219 and 1 first shallow doping drain 250.Wherein, the first source area 214a, the first drain area 216a, the first shallow doping drain 250 and channel region 217 are to be configured on the substrate 211, the first source area 214a and the first drain area 216a are the both sides that are disposed at channel region 217, and the first shallow doping drain 250 is to be disposed between the first source area 214a, the first drain area 216a and the channel region 217.In addition, gate dielectric layer 218 is to cover the first source area 214a, the first drain area 216a, first shallow doping drain 250 and the channel region 217, and first gate 212 to be correspondences be disposed on the gate dielectric layer 218 of channel region 217 tops.In addition, intermediate dielectric layer 219 is to be positioned at the top of substrate 211 and to cover first gate 212, and the first source metal 214b and the first drain metal level 216b are disposed on the intermediate dielectric layer 219, and the first source metal 214b and the first drain metal level 216b electrically connect with the first source area 214a and the first drain area 216a by the contact hole 219a of intermediate dielectric layer 219 and contact hole 219b.
Seeing also shown in Figure 5ly, is the diagrammatic cross-section of above-mentioned drive thin film transistors.This drive thin film transistors 220, it equally for example is a P type low-temperature polysilicon film transistor, yet most member of this drive thin film transistors 220 and configuration relation thereof are all identical with the switching thin-film transistor 210 described in Fig. 4, so only give different figure numbers at this, and repeat no longer in detail to give unnecessary details.Wherein, it should be noted that, according to feature of the present invention, the first shallow doping drain 250 of switching thin-film transistor 210 is to have following relation with the second shallow doping drain 260 of drive thin film transistors 220: the ion doping concentration of (one), the first shallow doping drain 250 is the ion doping concentration less than the second shallow doping drain 260.(2), the length L 1 of the first shallow doping drain 250 is the length L 2 greater than the second shallow doping drain 260.
In addition, except above-mentioned drive thin film transistors with shallow doping drain, the drive thin film transistors of the image element structure of active organic light-emitting diode of the present invention more can be for not having the structure kenel of shallow doping drain, yet its relevant icon and explanation are because of similar with above-mentioned drive thin film transistors, so also no longer repeat at this.
In sum, the image element structure of active organic light-emitting diode of the present invention is to form a shallow doping drain in switching thin-film transistor, and can strengthen the spacing of source area and drain area, thus, can effectively reduce the chance that produces leakage current between source area and the drain area, and the output voltage of reservior capacitor also will be more stable.In addition, the image element structure of active organic light-emitting diode of the present invention also optionally forms a shallow doping drain in drive thin film transistors, carry out the electric current and voltage kink effect in when operation to improve drive thin film transistors, be the driving voltage of the drive thin film transistors with shallow doping drain of the present invention and the graph of a relation of transmission current as shown in Figure 6.
See also shown in Figure 6, from figure, can obviously see, driving voltage (Vds) is after entering the saturation region, transmission current (Id) value is to level off to certain value, thus, when the driving voltage that is positioned at the saturation region reduced, the transmission current that enters Organic Light Emitting Diode by drive thin film transistors still can almost be kept a constant value, makes that the luminous intensity of Organic Light Emitting Diode is more stable.In conjunction with above-mentioned switching thin-film transistor and drive thin film transistors, the image element structure of active organic light-emitting diode of the present invention can provide a stable display effect.In addition, though switching thin-film transistor that embodiments of the invention illustrated and drive thin film transistors are all P type low-temperature polysilicon film transistor, yet, also can adopt switching thin-film transistor and the drive thin film transistors of N type low-temperature polysilicon film transistor as the image element structure of active organic light-emitting diode of the present invention according to feature of the present invention.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (15)
1, a kind of image element structure of active organic light-emitting diode is characterized in that it comprises at least:
One Organic Light Emitting Diode;
One data distribution;
The one scan distribution;
One switching thin-film transistor, has one first gate, one first source electrode, one first drain, one first passage district and one first shallow doping drain, wherein this first source electrode and this first drain are the both sides that are disposed at this first passage district, this first source electrode comprises first source area and one first source metal, this first drain comprises one first drain area and one first drain metal level, and this first shallow doping drain is to be disposed between this first source area and this first passage district and between this first drain area and this first passage district, and this first gate is that correspondence is disposed at this top, first passage district, this first gate is to be coupled to this scan wiring, and this first source electrode is to be coupled to this data distribution;
One drive thin film transistors, has one second gate, one second source electrode, one second drain, one second channel district and one second shallow doping drain, wherein this second source electrode and this second drain are the both sides that are disposed at this second channel district, this second source electrode comprises one second source area and one second source metal, this second drain comprises one second drain area and one second drain metal level, and this second shallow doping drain is to be disposed between this second source area and this second channel district and between this second drain area and this second channel district, and this second gate is that correspondence is disposed at this top, second channel district, this second gate is to be coupled to this first drain, and this second drain is to be coupled to this Organic Light Emitting Diode, and the ion doping concentration of this second shallow doping drain is greater than the ion doping concentration of this first shallow doping drain; And
One reservior capacitor, it is to electrically connect with this first drain and this second gate.
2, the image element structure of active organic light-emitting diode according to claim 1 is characterized in that wherein said switching thin-film transistor is to be P type low-temperature polysilicon film transistor.
3, the image element structure of active organic light-emitting diode according to claim 2 is characterized in that wherein said drive thin film transistors is to be P type low-temperature polysilicon film transistor.
4, the image element structure of active organic light-emitting diode according to claim 1 is characterized in that wherein said switching thin-film transistor is to be N type low-temperature polysilicon film transistor.
5, the image element structure of active organic light-emitting diode according to claim 4 is characterized in that wherein said drive thin film transistors is to be N type low-temperature polysilicon film transistor.
6, a kind of image element structure of active organic light-emitting diode is characterized in that it comprises at least:
One Organic Light Emitting Diode;
One data distribution;
The one scan distribution;
One switching thin-film transistor, has one first gate, one first source electrode, one first drain, one first passage district and one first shallow doping drain, wherein this first source electrode and this first drain are the both sides that are disposed at this first passage district, this first source electrode comprises one first source area and one first source metal, this first drain comprises one first drain area and one first drain metal level, and this first shallow doping drain is to be disposed between this first source area and this first passage district and between this first drain area and this first passage district, and this first gate is that correspondence is disposed at this top, first passage district, this first gate is to be coupled to this scan wiring, and this first source electrode is to be coupled to this data distribution;
One drive thin film transistors, has one second gate, one second source electrode, one second drain, one second channel district and one second shallow doping drain, wherein this second source electrode and this second drain are the both sides that are disposed at this second channel district, this second source electrode comprises one second source area and one second source metal, this second drain comprises one second drain area and one second drain metal level, and this second shallow doping drain is to be disposed between this second source area and this second channel district and between this second drain area and this second channel district, and this second gate is that correspondence is disposed at this top, second channel district, this second gate is to be coupled to this first drain, and this second drain is to be coupled to this Organic Light Emitting Diode, and the length of this first shallow doping drain is greater than the length of this second shallow doping drain; And
One reservior capacitor, it is to electrically connect with this first drain and this second gate.
7, the image element structure of active organic light-emitting diode according to claim 6 is characterized in that wherein said switching thin-film transistor is to be P type low-temperature polysilicon film transistor.
8, the image element structure of active organic light-emitting diode according to claim 7 is characterized in that wherein said drive thin film transistors is to be P type low-temperature polysilicon film transistor.
9, the image element structure of active organic light-emitting diode according to claim 6 is characterized in that wherein said switching thin-film transistor is to be N type low-temperature polysilicon film transistor.
10, the image element structure of active organic light-emitting diode according to claim 9 is characterized in that wherein said drive thin film transistors is to be N type low-temperature polysilicon film transistor.
11, a kind of image element structure of active organic light-emitting diode is characterized in that it comprises at least:
One Organic Light Emitting Diode;
One data distribution;
The one scan distribution;
One switching thin-film transistor, has one first gate, one first source electrode, one first drain, one first passage district and one first shallow doping drain, wherein this first source electrode and this first drain are the both sides that are disposed at this first passage district, this first source electrode comprises one first source area and one first source metal, this first drain comprises one first drain area and one first drain metal level, and this first shallow doping drain is to be disposed between this first source area and this first passage district and between this first drain area and this first passage district, and this first gate is that correspondence is disposed at this top, first passage district, this first gate is to be coupled to this scan wiring, and this first source electrode is to be coupled to this data distribution;
One drive thin film transistors, have one second gate, one second source electrode, one second drain and a second channel district, wherein this second source electrode and this second drain are the both sides that are disposed at this second channel district, this second source electrode comprises one second source area and one second source metal, this second drain comprises one second drain area and one second drain metal level, and this second gate to be correspondence be disposed at this top, second channel district, this second gate is to be coupled to this first drain, and this second drain is to be coupled to this Organic Light Emitting Diode; And
One reservior capacitor, it is to electrically connect with this first drain and this second gate.
12, the image element structure of active organic light-emitting diode according to claim 11 is characterized in that wherein said switching thin-film transistor is to be P type low-temperature polysilicon film transistor.
13, the image element structure of active organic light-emitting diode according to claim 12 is characterized in that wherein said drive thin film transistors is to be P type low-temperature polysilicon film transistor.
14, the image element structure of active organic light-emitting diode according to claim 11 is characterized in that wherein said switching thin-film transistor is to be N type low-temperature polysilicon film transistor.
15, the image element structure of active organic light-emitting diode according to claim 14 is characterized in that wherein said drive thin film transistors is to be N type low-temperature polysilicon film transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310101841 CN1266658C (en) | 2003-10-20 | 2003-10-20 | Active organic light-emitting diode picture element structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310101841 CN1266658C (en) | 2003-10-20 | 2003-10-20 | Active organic light-emitting diode picture element structure |
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| Publication Number | Publication Date |
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| CN1529300A CN1529300A (en) | 2004-09-15 |
| CN1266658C true CN1266658C (en) | 2006-07-26 |
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| CN 200310101841 Expired - Lifetime CN1266658C (en) | 2003-10-20 | 2003-10-20 | Active organic light-emitting diode picture element structure |
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| CN100388527C (en) * | 2004-10-14 | 2008-05-14 | 友达光电股份有限公司 | Organic light emitting device and its mfg method |
| CN100367673C (en) * | 2005-01-14 | 2008-02-06 | 友达光电股份有限公司 | LED display panel and D/A converter |
| CN107230681B (en) * | 2017-05-05 | 2020-11-06 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
| US10634949B1 (en) * | 2018-10-17 | 2020-04-28 | a.u. Vista Inc. | Display systems and methods involving MIM diodes |
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