CN1264163A - Method for cleaning surface of indium phosphide - Google Patents
Method for cleaning surface of indium phosphide Download PDFInfo
- Publication number
- CN1264163A CN1264163A CN 99100810 CN99100810A CN1264163A CN 1264163 A CN1264163 A CN 1264163A CN 99100810 CN99100810 CN 99100810 CN 99100810 A CN99100810 A CN 99100810A CN 1264163 A CN1264163 A CN 1264163A
- Authority
- CN
- China
- Prior art keywords
- indium phosphide
- cleaning
- deposition chamber
- cleaning surface
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A method for cleaning the surface of indium phosphide includes such steps as putting indium phosphide material in vacuum chamber with vacuum level of 10 to the power -5Pa, introducing the mixture of hydrogen, nitrogen and argon to the vacuum chamber as deposition chamber, applying current to coil to generate a magnetic field of about 875 Guss in the deposition chamber, introducing the microwave at 13.56 MHz to the depsotion chamber, and generating the plasma of mixed gas for 10-40 min under the action of microwave and magnetic field to clean the surface of the material. In said procedure, the deposition chamber is always under low vacuum (0.2-1.3 Pa).
Description
The present invention relates to a kind of clean method of semiconductor material surface, particularly a kind of method of staiing with plasma cleaning indium phosphide and device surface thereof.
In air, indium phosphide (InP) material surface is oxidized easily, the contamination of carbon etc. is arranged again, these directly influence life-span and other characteristic of the device of being made by it, experiment shows, when the blooming that deielectric-coating such as the direct deposit silicon dioxide of the device surface of the indium phosphide that did not clean with method of the present invention (InP) material or its making, silicon oxynitride, silicon nitride and these deielectric-coating are formed, deielectric-coating is relatively poor in the tack on surface with the Ecr plasma chemical vapour deposition technique.Method for cleaning surface about semi-conducting material, " utilizing an Ecr plasma cleaning GaAs low-temperature surface " literary composition on 1989 the 28th volume the first phase " Japanese applicating physical magazine " (J.J.Applied Physics) and A9 in 1991 roll up in the third phase " vacuum science technical journal " " utilizing electron cyclotron resonace oxygen; hydrogen plasma oxidation and deoxidation gallium arsenide surface " literary composition on (J.Vac.Sci.Technol), introduced a kind of method of removing gallium arsenide surface oxygen, this method is at first simply removed the gallium arsenide surface mechanical damage layer with chemical method, then it is inserted in the clean room, with vacuum equipment clean room is evacuated to high vacuum, feed highly purified hydrogen then, under the acting in conjunction in microwave and magnetic field, produce the plasma of hydrogen, plasma by hydrogen frequently acts on gallium arsenide surface, reaches the purpose of deoxidation.The deficiency of this method be it only when substrate has higher temperature effect just better, when at room temperature handling, this method deoxidation is not thorough.But processing does not have bibliographical information for indium phosphide (InP) material surface cleaning.We are carrying out clean to gallium arsenide surface with the plasma of the mist of electron cyclotron resonace hydrogen, helium, argon below 100 degrees centigrade, effect is preferably arranged, lose in a large number but use it for the phosphorus of finding the surface when handling indium phosphide (InP) material surface, changed the original structure of material.
The clean method that the purpose of this invention is to provide a kind of surface of indium phosphide, this method simple possible; This method can be removed indium phosphide (InP) material and removal oxygen, the carbon of the device surface made by its stain, improve the surface with deielectric-coating and blooming adhesivenesses such as the silicon dioxide of Ecr plasma chemical vapour deposition technique deposit, silicon oxynitride, silicon nitrides.
For achieving the above object, this method comprises:
1) the indium phosphide device is inserted in the vacuum chamber, then, the base vacuum degree of vacuum chamber is evacuated to 10 with vaccum-pumping equipment
-5More than the Pa order of magnitude reaches;
2) by certain ratio hydrogen, nitrogen, argon gas are mixed the back and feed deposition chamber (vacuum chamber);
3) feed certain electric current to field coil, in deposition chamber, form the magnetic field about 875Guss;
4) with certain power, frequency be the microwave importing deposition chamber of 13.56MHz;
5) under microwave and magnetic field acting in conjunction, produce the plasma of mist, continue 10-40 minute, the material surface under the cleaning low temperature.
In the process of cleaning,, keep deposition chamber that the low vacuum of 0.2-1.30Pa is arranged by vaccum-pumping equipment always;
The flow of wherein said hydrogen, helium, argon gas is 3sccm, 27sccm, 20sccm;
The current strength in wherein said generation magnetic field is 150 amperes-170 amperes;
Wherein the plasma cleans time is 20 minutes;
The microwave power that wherein produces plasma is 300 watts-500 watts;
Wherein being the main device made from the indium phosphide, can be 1310nm semiconductor laser, 1550nm semiconductor laser, 1310nm photodetector, also can be the semiconductor laser based on the making such as InGaAsP of indium phosphide;
Wherein the cleaning temp of low-temperature substrate can be less than 300 degrees centigrade.
Owing to utilize the electron cyclotron resonace method to produce the mixed gas plasma of hydrogen, nitrogen, argon, frequently act on surface of indium phosphide by these ions, cleaning effect is significantly improved, simultaneously, the existence of heavy ions such as argon ion, both quickened the speed of this cleaning activity, also improved surperficial microstructure, improved the adhesive force of deielectric-coating at surface of indium phosphide.And can clean at normal temperatures.
The present invention is described further below in conjunction with specific embodiment.
With HF acid buffer preliminary treatment surface of indium phosphide, the bulky grain of removing the surface stains and surperficial mechanical damage (if new cleavage surface needn't be carried out this step).The indium phosphide print that preliminary treatment is good is inserted on the vacuum chamber sample stage, with mechanical pump, molecular pump, diffusion pump the base vacuum degree of deposition chamber is evacuated to 10 successively
-5Pa.Then, keep diffusion pump work, the hydrogen, nitrogen, the argon gas that flow are respectively 3sccm, 27sccm, 20sccm enter deposition chamber after mixing, meanwhile, with power is the microwave importing deposition chamber of 300-500 watt, and the electric current in setting generation magnetic field is the 150-170 ampere.Under the action of a magnetic field, electronics continually with mist atomic collision, form the plasma that many gas ions exist, and they frequently act on surface of indium phosphide.For reaching cleaning effect preferably, after the gas build-up of luminance continues 20 minutes, stop to clean, the air pressure of the deposition chamber in the cleaning process maintains about 0.35Pa all the time.
This method compared with prior art has: simple operating steps can reach preferably to phosphatization The purpose of indium cleaning surfaces.
Claims (7)
1, a kind of clean method of surface of indium phosphide is characterized in that:
1) the indium phosphide device is inserted in the vacuum chamber, then, the base vacuum degree of vacuum chamber is evacuated to 10 with vaccum-pumping equipment
-5More than the Pa order of magnitude reaches;
2) by certain ratio hydrogen, nitrogen, argon gas are mixed the back and feed deposition chamber (vacuum chamber);
3) feed certain electric current to field coil, in deposition chamber, form the magnetic field about 875Guss;
4) with certain power, frequency be the microwave importing deposition chamber of 13.56MHz;
5) under microwave and magnetic field acting in conjunction, produce the plasma of mist, continue 10-40 minute, the material surface under the cleaning low temperature;
Wherein: in the process of cleaning,, keep deposition chamber that the low vacuum of 0.2-1.30Pa is arranged by vaccum-pumping equipment always.
2, method for cleaning surface of indium phosphide according to claim 1 is characterized in that: the flow of described hydrogen, helium, argon gas is 3sccm, 27sccm, 20sccm.
3, method for cleaning surface of indium phosphide according to claim 1 is characterized in that: the current strength in described generation magnetic field is 150 amperes-170 amperes.
4, method for cleaning surface of indium phosphide according to claim 1 is characterized in that: the plasma cleans time is 20 minutes.
5, method for cleaning surface of indium phosphide according to claim 1 is characterized in that: the microwave power that produces plasma is 300 watts-500 watts.
6, method for cleaning surface of indium phosphide according to claim 1, it is characterized in that: be the main device made from the indium phosphide, can be 1310nm semiconductor laser, 1550nm semiconductor laser, 1310nm photodetector, also can be the semiconductor laser based on the making such as InGaAsP of indium phosphide.
7, method for cleaning surface of indium phosphide according to claim 1 is characterized in that: the cleaning temp of low-temperature substrate can be less than 300 degrees centigrade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99100810 CN1124643C (en) | 1999-02-14 | 1999-02-14 | Method for cleaning surface of indium phosphide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99100810 CN1124643C (en) | 1999-02-14 | 1999-02-14 | Method for cleaning surface of indium phosphide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1264163A true CN1264163A (en) | 2000-08-23 |
| CN1124643C CN1124643C (en) | 2003-10-15 |
Family
ID=5270204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99100810 Expired - Fee Related CN1124643C (en) | 1999-02-14 | 1999-02-14 | Method for cleaning surface of indium phosphide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1124643C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100550315C (en) * | 2004-09-01 | 2009-10-14 | 芝浦机械电子装置股份有限公司 | Ashing method and cineration device |
| CN104865700A (en) * | 2015-04-29 | 2015-08-26 | 中国科学院长春光学精密机械与物理研究所 | ArH cleaning method for carbon pollution on surface of optical element |
| CN107338481A (en) * | 2017-06-27 | 2017-11-10 | 台山市华兴光电科技有限公司 | A kind of cleaning method of indium phosphide polycrystal material |
| CN108369894A (en) * | 2015-12-04 | 2018-08-03 | 应用材料公司 | Method and solution for cleaning INGAAS (or iii-v) substrate |
| CN114042684A (en) * | 2022-01-12 | 2022-02-15 | 北京通美晶体技术股份有限公司 | Indium phosphide wafer and mixed cleaning process thereof |
| CN114220732A (en) * | 2022-02-23 | 2022-03-22 | 北京通美晶体技术股份有限公司 | Ultra-clean cleaning method and application of indium phosphide wafer |
-
1999
- 1999-02-14 CN CN 99100810 patent/CN1124643C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100550315C (en) * | 2004-09-01 | 2009-10-14 | 芝浦机械电子装置股份有限公司 | Ashing method and cineration device |
| CN104865700A (en) * | 2015-04-29 | 2015-08-26 | 中国科学院长春光学精密机械与物理研究所 | ArH cleaning method for carbon pollution on surface of optical element |
| CN108369894A (en) * | 2015-12-04 | 2018-08-03 | 应用材料公司 | Method and solution for cleaning INGAAS (or iii-v) substrate |
| CN108369894B (en) * | 2015-12-04 | 2019-10-15 | 应用材料公司 | For cleaning the method and solution of INGAAS (or iii-v) substrate |
| CN107338481A (en) * | 2017-06-27 | 2017-11-10 | 台山市华兴光电科技有限公司 | A kind of cleaning method of indium phosphide polycrystal material |
| CN114042684A (en) * | 2022-01-12 | 2022-02-15 | 北京通美晶体技术股份有限公司 | Indium phosphide wafer and mixed cleaning process thereof |
| CN114042684B (en) * | 2022-01-12 | 2022-03-22 | 北京通美晶体技术股份有限公司 | Indium phosphide wafer and mixed cleaning process thereof |
| CN114220732A (en) * | 2022-02-23 | 2022-03-22 | 北京通美晶体技术股份有限公司 | Ultra-clean cleaning method and application of indium phosphide wafer |
| CN114220732B (en) * | 2022-02-23 | 2022-05-20 | 北京通美晶体技术股份有限公司 | Ultra-clean cleaning method and application of indium phosphide wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1124643C (en) | 2003-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7585777B1 (en) | Photoresist strip method for low-k dielectrics | |
| US5399237A (en) | Etching titanium nitride using carbon-fluoride and carbon-oxide gas | |
| US9064816B2 (en) | Dry-etch for selective oxidation removal | |
| US7071113B2 (en) | Process for removal of photoresist mask used for making vias in low K carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask | |
| US5454903A (en) | Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization | |
| US20040139983A1 (en) | Cleaning of CVD chambers using remote source with CXFYOZ based chemistry | |
| US7244313B1 (en) | Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps | |
| US7479457B2 (en) | Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof | |
| KR20030054726A (en) | Method of removing native oxide film | |
| JP2002512437A (en) | Copper deposition method with enhanced adhesion | |
| CN101015042A (en) | Methods of removing photoresist on substrates | |
| US20050155625A1 (en) | Chamber cleaning method | |
| CN101106073B (en) | Heat treatment for stabilizing a gluing interface | |
| CN1124643C (en) | Method for cleaning surface of indium phosphide | |
| CN1108631C (en) | Method for cleaning surface of gallium arsenide | |
| Brussaard et al. | Stripping of photoresist using a remote thermal Ar/O 2 and Ar/N 2/O 2 plasma | |
| EP0774772A1 (en) | Methods for physically etching silicon electrically conducting surfaces | |
| US20120234491A1 (en) | Plasma processing method and plasma processing apparatus | |
| JPH1140502A (en) | Method for dry-cleaning semiconductor manufacturing apparatus | |
| Sherman | I n situ removal of native oxide from silicon wafers | |
| JPH1098019A (en) | Surface cleaning | |
| JP3963295B2 (en) | Chemical dry etching method | |
| Zimmerman et al. | Morphology and reactivity of ions and cluster ions produced by the laser ablation of yttrium barium copper oxide (YBa2Cu3O7-. delta.) superconductor | |
| JP2001102345A (en) | Method and device for treating surface | |
| Baklanov et al. | Surface processes occurring on TiSi 2 and CoSi 2 in fluorine-based plasmas. Reactive ion etching in CF 4/CHF 3 plasmas |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |