CN1124643C - Method for cleaning surface of indium phosphide - Google Patents
Method for cleaning surface of indium phosphide Download PDFInfo
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- CN1124643C CN1124643C CN 99100810 CN99100810A CN1124643C CN 1124643 C CN1124643 C CN 1124643C CN 99100810 CN99100810 CN 99100810 CN 99100810 A CN99100810 A CN 99100810A CN 1124643 C CN1124643 C CN 1124643C
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- indium phosphide
- cleaning
- vacuum chamber
- vacuum
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- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a method for cleaning the surface of indium phosphide, which comprises the following steps: 1, a device with indium phosphide material is put into a vacuum chamber with the vacuum degree of 10<-5>Pa; 2, hydrogen, nitrogen and argon are led into a deposition chamber (the vacuum chamber) by being proportionally mixed; 3, a certain current is galvanized to a magnetic field coil so as to form a magnetic field about 875 Guss in the deposition chamber; 4, microwaves with certain power and the frequency of 13.56MHz are led into the deposition chamber; 5, the plasmas of the mixed gas are generated under the combined action of the microwaves and the magnetic field, and are lasted for 10 min to 40 min so as to clean material surfaces at low temperature. In the process of cleaning technology, the deposition chamber is kept in the low vacuum of 0.2 to 1.30Pa by a vacuum extractor.
Description
Technical field
The present invention relates to a kind of clean method of semiconductor material surface, particularly a kind of method of staiing with plasma cleaning indium phosphide and device surface thereof.
Background technology
In air, indium phosphide (InP) material surface is oxidized easily, the contamination of carbon etc. is arranged again, these directly influence life-span and other characteristic of the device of being made by it, experiment shows, when the blooming that deielectric-coating such as the direct deposit silicon dioxide of the device surface of the indium phosphide that did not clean with method of the present invention (InP) material or its making, silicon oxynitride, silicon nitride and these deielectric-coating are formed, deielectric-coating is relatively poor in the tack on surface with the Ecr plasma chemical vapour deposition technique.Method for cleaning surface about semi-conducting material, " utilizing an Ecr plasma cleaning GaAs low-temperature surface " literary composition on 1989 the 28th volume the first phase " Japanese applicating physical magazine " (J.J.Applied Physics) and A9 in 1991 roll up in the third phase " vacuum science technical journal " " utilizing electron cyclotron resonace oxygen; hydrogen plasma oxidation and deoxidation gallium arsenide surface " literary composition on (J.Vac.Sci.Technol), introduced a kind of method of removing gallium arsenide surface oxygen, this method is at first simply removed the gallium arsenide surface mechanical damage layer with chemical method, then it is inserted in the clean room, with vacuum equipment clean room is evacuated to high vacuum, feed highly purified hydrogen then, under the acting in conjunction in microwave and magnetic field, produce the plasma of hydrogen, plasma by hydrogen frequently acts on gallium arsenide surface, reaches the purpose of deoxidation.The deficiency of this method be it only when substrate has higher temperature effect just better, when at room temperature handling, this method deoxidation is not thorough.But processing does not have bibliographical information for indium phosphide (InP) material surface cleaning.We are carrying out clean to gallium arsenide surface with the plasma of the mist of electron cyclotron resonace hydrogen, helium, argon below 100 degrees centigrade, effect is preferably arranged, lose in a large number but use it for the phosphorus of finding the surface when handling indium phosphide (InP) material surface, changed the original structure of material.
Summary of the invention
The clean method that the purpose of this invention is to provide a kind of surface of indium phosphide, this method simple possible; This method can be removed indium phosphide (InP) material and removal oxygen, the carbon of the device surface made by its stain, improve the surface with deielectric-coating and blooming adhesivenesses such as the silicon dioxide of Ecr plasma chemical vapour deposition technique deposit, silicon oxynitride, silicon nitrides.
For achieving the above object, this method comprises:
1) the indium phosphide device is inserted in the vacuum chamber, then, the base vacuum degree of vacuum chamber is evacuated to 10 with vaccum-pumping equipment
-5More than the Pa order of magnitude reaches;
2) ratio of pressing 3: 27: 20 mixes back feeding vacuum chamber with hydrogen, nitrogen, argon gas;
3), in vacuum chamber, form 875 Gausses ± 20 Gausses' magnetic field to the electric current of field coil feeding 150-170 ampere;
4) be that 300 watts-500 watts, frequency are that the microwave of 13.56MHz imports vacuum chamber with power;
5) under microwave and magnetic field acting in conjunction, produce the plasma of mist, continue 10-40 minute, the material surface under the cleaning low temperature;
Wherein: in the process of cleaning,, keep deposition chamber that the low vacuum of 0.2-1.30Pa is arranged by vaccum-pumping equipment always.
The flow of described hydrogen, helium, argon gas is 3sccm, 27sccm, 20sccm.
The plasma cleans time is 20 minutes.
The microwave power that produces plasma is 300 watts-500 watts.
Selecting indium phosphide is the device that substrate is made, and is 1310nm semiconductor laser, 1550nm semiconductor laser, 1310nm photodetector, also can be that indium phosphide is the semiconductor laser that the InGaAsP of substrate etc. is made.
The material surface temperature that is cleaned is less than 300 degrees centigrade.
Wherein being the device that substrate is made with the indium phosphide, can be 1310nm semiconductor laser, 1550nm semiconductor laser, 1310nm photodetector, also can be to be the semiconductor laser of the making such as InGaAsP of substrate with the indium phosphide;
Owing to utilize the electron cyclotron resonace method to produce the mixed gas plasma of hydrogen, nitrogen, argon, frequently act on surface of indium phosphide by these ions, cleaning effect is significantly improved, simultaneously, the existence of heavy ions such as argon ion, both quickened the speed of this cleaning activity, also improved surperficial microstructure, improved the adhesive force of deielectric-coating at surface of indium phosphide.And can clean at normal temperatures.
Embodiment
The present invention is described further below in conjunction with specific embodiment.
With HF acid buffer preliminary treatment surface of indium phosphide, the bulky grain of removing the surface stains and surperficial mechanical damage (if new cleavage surface needn't be carried out this step).The indium phosphide print that preliminary treatment is good is inserted on the vacuum chamber sample stage, with mechanical pump, molecular pump, diffusion pump the base vacuum degree of deposition chamber is evacuated to 10 successively
-5Pa.Then, keep diffusion pump work, the hydrogen, nitrogen, the argon gas that flow are respectively 3sccm, 27sccm, 20sccm enter deposition chamber after mixing, meanwhile, with power is the microwave importing deposition chamber of 300-500 watt, and the electric current in setting generation magnetic field is the 150-170 ampere.Under the action of a magnetic field, electronics continually with mist atomic collision, form the plasma that many gas ions exist, and they frequently act on surface of indium phosphide.For reaching cleaning effect preferably, after the gas build-up of luminance continues 20 minutes, stop to clean, the air pressure of the deposition chamber in the cleaning process maintains about 0.35Pa all the time.
This method compared with prior art has: simple operating steps can reach preferably to phosphatization The purpose of indium cleaning surfaces.
Claims (6)
1, a kind of clean method of surface of indium phosphide is characterized in that:
1) the indium phosphide device is inserted in the vacuum chamber, then, the base vacuum degree of vacuum chamber is evacuated to 10 with vaccum-pumping equipment
-5More than the Pa order of magnitude reaches;
2) ratio of pressing 3: 27: 20 mixes back feeding vacuum chamber with hydrogen, nitrogen, argon gas;
3), in vacuum chamber, form 875 Gausses ± 20 Gausses' magnetic field to the electric current of field coil feeding 150-170 ampere;
4) be that 300 watts-500 watts, frequency are that the microwave of 13.56MHz imports vacuum chamber with power;
5) under microwave and magnetic field acting in conjunction, produce the plasma of mist, continue 10-40 minute, the material surface under the cleaning low temperature;
Wherein: in the process of cleaning,, keep deposition chamber that the low vacuum of 0.2-1.30Pa is arranged by vaccum-pumping equipment always.
2, method for cleaning surface of indium phosphide according to claim 1 is characterized in that: the flow of described hydrogen, helium, argon gas is 3sccm, 27sccm, 20sccm.
3, method for cleaning surface of indium phosphide according to claim 1 is characterized in that: the plasma cleans time is 20 minutes.
4, method for cleaning surface of indium phosphide according to claim 1 is characterized in that: the microwave power that produces plasma is 300 watts-500 watts.
5, method for cleaning surface of indium phosphide according to claim 1, it is characterized in that: selecting indium phosphide is the device that substrate is made, being 1310nm semiconductor laser, 1550nm semiconductor laser, 1310nm photodetector, also can be that indium phosphide is the semiconductor laser that the InGaAsP of substrate etc. is made.
6, method for cleaning surface of indium phosphide according to claim 1 is characterized in that: the material surface temperature that is cleaned is less than 300 degrees centigrade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99100810 CN1124643C (en) | 1999-02-14 | 1999-02-14 | Method for cleaning surface of indium phosphide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99100810 CN1124643C (en) | 1999-02-14 | 1999-02-14 | Method for cleaning surface of indium phosphide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1264163A CN1264163A (en) | 2000-08-23 |
| CN1124643C true CN1124643C (en) | 2003-10-15 |
Family
ID=5270204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99100810 Expired - Fee Related CN1124643C (en) | 1999-02-14 | 1999-02-14 | Method for cleaning surface of indium phosphide |
Country Status (1)
| Country | Link |
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| CN (1) | CN1124643C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4588391B2 (en) * | 2004-09-01 | 2010-12-01 | 芝浦メカトロニクス株式会社 | Ashing method and ashing apparatus |
| CN104865700B (en) * | 2015-04-29 | 2017-07-14 | 中国科学院长春光学精密机械与物理研究所 | The ArH cleaning methods of optical element surface carbon pollution |
| CN110676194A (en) * | 2015-12-04 | 2020-01-10 | 应用材料公司 | Method and solution for cleaning INGAAS (or III-V) substrates |
| CN107338481A (en) * | 2017-06-27 | 2017-11-10 | 台山市华兴光电科技有限公司 | A kind of cleaning method of indium phosphide polycrystal material |
| CN114042684B (en) * | 2022-01-12 | 2022-03-22 | 北京通美晶体技术股份有限公司 | Indium phosphide wafer and mixed cleaning process thereof |
| CN114220732B (en) * | 2022-02-23 | 2022-05-20 | 北京通美晶体技术股份有限公司 | Ultra-clean cleaning method and application of indium phosphide wafer |
-
1999
- 1999-02-14 CN CN 99100810 patent/CN1124643C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1264163A (en) | 2000-08-23 |
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