CN1254770A - Enclosing method of ampoule for growing crystal by sublimation method - Google Patents
Enclosing method of ampoule for growing crystal by sublimation method Download PDFInfo
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- CN1254770A CN1254770A CN 98122563 CN98122563A CN1254770A CN 1254770 A CN1254770 A CN 1254770A CN 98122563 CN98122563 CN 98122563 CN 98122563 A CN98122563 A CN 98122563A CN 1254770 A CN1254770 A CN 1254770A
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- ampoule
- packing
- encapsulation
- sintering
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Abstract
A sealing method of ampoule by sublimation method to grow crystal features that an additional tube part with one open end and another end having a capillary hole is used, when an ampoule is sealed it can prevent pollution and oxidation and improve the speed and stability of crystal growth.
Description
The present invention's " method for packing of a kind of subliming method crystal growth peace bottle " belongs to the equipment and the method for crystal growth.
Prior art: because the significant effect of purifying and suppressing native defect uses the subliming method of gaseous phase partial pressure Controlling Source to claim gas phase physics transport method once to be widely used for preparing high-quality compound monocrystal again.Yet, because of the application of its relatively poor stable and slower this method of growth velocity is restricted.In this growing method, the controlled step of crystal growth is a gas phase mass transport process, and the existence of raw-material surface oxidation and easy sublimability impurity can seriously influence the formation of gas phase and the dividing potential drop of component, and then deterioration mass transport power.
The method for packing of traditional single crystal growing peace bottle as shown in Figure 1.After raw material S packs into, two portions of peace bottle encapsulate at A place sintering, simultaneously the B place is cooled off to prevent the oxidation of raw material, but this operation has two shortcomings: (1) impurity that high temperature sintering produced is easy to adhere at the raw material at the B place that is cooled and peace bottle inwall, thereafter crystal growth is polluted, (2) for guaranteeing high efficiency gas phase mass transportation in the crystal growth, the length of growth room generally is chosen for 7-8cm, surpasses this and seriously is obstructed apart from transporting then.So near apart from the sintering place, even cool off, raw-material oxidation can not be avoided fully.These 2 all can influence crystal growth thereafter significantly the time gas phase mass transport and the stability of growth velocity.
Content of the present invention: for addressing these problems, we have added the quartzy pipe fitting that diameter one an end opening the other end has pore (about Φ 1mm), and it can be packed in the peace bottle by the square, as shown in Figure 2.At first, this three part is cooled off the D place simultaneously in the encapsulation of C place sintering.Because away from sintered location, the oxidation of raw material is suppressed.In addition, impurity condenses at refrigerative D place, throttling capillaceous in addition, and the contamination of raw material position also is prevented from effectively.After C place encapsulation finished, packing into was used for behind the element source R of control growing dividing potential drop, with the encapsulation of E place sintering, encapsulated at F place sintering at last and finished under high vacuum condition.Concrete operations are shown in the step 1 among Fig. 2,2,3.
Advantage of the present invention and positively effect:
1. be skillfully constructed, method is simple, is convenient to promote;
2. the contamination that has produced when having reduced the encapsulation of peace bottle and the oxidation of material;
3. improve the speed and the stability of crystal growth.
The method for packing of the original crystal growth peace of description of drawings: Fig. 1 bottle, S is a charging feedstock, the encapsulation of A place sintering, the cooling of B place.The method for packing of Fig. 2 crystal growth peace of the present invention bottle, B is an element source, the encapsulation of C place sintering, the cooling of D place, with E place sintering, encapsulation finishes at the F place at last under vacuum condition.Fig. 2 is a Figure of abstract.
Embodiment:
We select CdTe for use is that example is grown.The silica tube that is used for the ID Φ 12mm of crystal growth and Φ 8mm was at 1: 1 HNO
3: soak after several minutes in the HF mixed solution and use the deionized water ultrasonic cleaning, use H again
2-O
2Flame burns till growth peace bottle.For removing the impurity in the quartz material, all parts are dried by the fire under 1100 ℃ of vacuum and were burnt 20 hours.After with aforesaid method starting material S being packed into then and with the encapsulation of quartz peace bottle.822 ℃ of crystal growth temperatures, according to (1):
CdTe(s)＝Cd(g)+(1/2)Te(g) (1)
Pcd=2Pte
2=2
1/3K
2/3, the temperature that (2) can obtain the Cd source is 437 ℃.Under this minimum partial pressure growth, the highest growth velocity can be provided and can guarantee the crystalline stoichiometric ratio.The 4.2K electron cyclotron mobility of the CdTc monocrystalline that obtains is 2.5 * 10
6Cm
2/ Vs, the neutral donor impurity concentration is 5 * 10
14Cm
-3, both are at present preferably reported values.
Claims (1)
1. the method for packing of subliming method crystal growth peace bottle, it is characterized in that when the encapsulation of peace bottle, used one the one end opening the other end to have the quartzy pipe fitting of capillary aperture, just the growth of packing into is pacified in the bottle, and this three part is encapsulated at C place sintering, simultaneously the D place is cooled off, impurity condenses at the D place, packing into is used for the element source R of control growing dividing potential drop, with the encapsulation of E place sintering, encapsulates at F place sintering and to finish under high vacuum condition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98122563 CN1113112C (en) | 1998-11-20 | 1998-11-20 | Enclosing method of ampoule for growing crystal by sublimation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98122563 CN1113112C (en) | 1998-11-20 | 1998-11-20 | Enclosing method of ampoule for growing crystal by sublimation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1254770A true CN1254770A (en) | 2000-05-31 |
| CN1113112C CN1113112C (en) | 2003-07-02 |
Family
ID=5227804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 98122563 Expired - Fee Related CN1113112C (en) | 1998-11-20 | 1998-11-20 | Enclosing method of ampoule for growing crystal by sublimation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1113112C (en) |
-
1998
- 1998-11-20 CN CN 98122563 patent/CN1113112C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1113112C (en) | 2003-07-02 |
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