CN1252612A - Electron emission device and display device using such electron emission device - Google Patents
Electron emission device and display device using such electron emission device Download PDFInfo
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- CN1252612A CN1252612A CN 98120466 CN98120466A CN1252612A CN 1252612 A CN1252612 A CN 1252612A CN 98120466 CN98120466 CN 98120466 CN 98120466 A CN98120466 A CN 98120466A CN 1252612 A CN1252612 A CN 1252612A
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Abstract
An electron emitting device with high electron emitting efficiency includes a metal or semiconductor electron-supplying layer, an insulating layer formed on the electron supplying layer and a metal film electrode formed on the insulating layer. The insulating layer has a film thickness greater than or equal to 50 nm and a field stabilizing layer. When an electric field is applied between the electron supplying layer and the metal film electrode, the electron emitting device will emit electrons.
Description
The present invention relates to a kind of electron emission device and utilize the electron emission display device of this electron emission device.
In field electron emission display, known Field Emission Display (FED) is for being equipped with the planar transmit display device of the cold cathode electron emission source array that does not need the negative electrode heating.For example utilize the emission principle of FED of micro-protuberance Spindt type cold cathode as follows: although this FED has the Spindt type projection cathode array that is different from cathode ray tube (CRT), its emission principle and CRT are similar.In FED, by each grid that separates with Spindt type negative electrode electronics is introduced the vacuum space, and electronics is got to be coated on the fluorescent material on the transparent anode, thereby cause the light emission.
Yet, owing to, comprise many technologies, so this FED exists the low problem of the rate of manufacturing a finished product as the manufacturing complexity of little Spindt type emitter array of cold cathode.
Also has a kind of electron emission device with metal-insulator-metal (MIM) structure as the plane electronics emission source.Electron emission device with mim structure comprises and is formed at on-chip Al bottom as bottom electrode, the Al of thick about 10nm successively
2O
3Insulating barrier, and as the Au upper strata of thick about 10nm of top electrode.Be arranged at this MIM device under the situation under the comparative electrode of vacuum,, and when on comparative electrode, adding accelerating voltage simultaneously, have some electronics to emit, and arrive comparative electrode from the Au upper strata when interlayer making alive on Al bottom and Au.Even the electron emission device of this mim structure still can not provide the emitting electrons of capacity.
In order to overcome these shortcomings of this MIM device emission, it is generally acknowledged to be necessary to make Al
2O
3Insulating barrier is thinner, several approximately nanometers, and make Al
2O
3The insulating barrier homogeneous is so that Al
2O
3The interface of the last interlayer of insulating barrier and Au is more even.
For thinner and more uniform insulating barrier is provided, for example, people attempt to utilize anode oxidation method control oxidation current, thereby improve electron emission characteristic, as the invention of the flat 7-65710 description of Japanese Unexamined Patent Publication No.
Yet, even, also can only guarantee about 1 * 10 by the electron emission device with mim structure of this anode oxidation method manufacturing
-5A/cm
2Emission current and about 1 * 10
-3Electronic transmitting efficiency.
Therefore, the purpose of this invention is to provide a kind of electron emission device with high electronic transmitting efficiency, this device can utilize and add thereon low and apply voltage emitting electrons stably, and utilizes the electron emission display of this electron emission device.
In order to overcome above-mentioned and other problem, utilize according to embodiments of the present invention electron emission device to realize purpose of the present invention, device according to the present invention comprises:
Provide layer by being arranged at the electronics that metal on the Ohmic electrode or semiconductor constitute;
Be formed at electronics insulating barrier on the layer is provided; And
Be formed at the film metal electrode of also facing the vacuum space on this insulating barrier,
It is characterized in that, said insulating barrier have at least a conductivity be higher than said insulating barrier the field stabilized zone, thereby, electric field be added on electronics provide the layer and thin film metal layer between the time, this electron emission device emitting electrons.
In electron emission device according to the present invention, said stabilized zone is arranged on the interface between film metal electrode and the insulating barrier.
In electron emission device according to the present invention, said stabilized zone is arranged at insulating barrier and electronics interface between the layer is provided.
In electron emission device according to the present invention, said stabilized zone is arranged at the zone line of said insulating barrier.
In electron emission device according to the present invention, lamellar field stabilized zone and insulating barrier arranged in that thickness direction is alternately laminated.
In electron emission device according to the present invention, the thickness of said stacked lamellar field stabilized zone reduces gradually along thickness direction.
In electron emission device according to the present invention, the thickness of said stacked a plurality of stabilized zones increases gradually along thickness direction.
And, utilize the display device of electron emission device of the present invention to comprise:
A pair of first and second substrates that face with each other and have the vacuum space therebetween;
Be arranged at first on-chip a plurality of electron emission devices;
Be arranged at the passive electrode of second substrate; And
Be formed at the fluorescence coating on the passive electrode,
Each electron emission device comprises: metal or semi-conductive electronics provide layer; Be formed at electronics insulating barrier on the layer is provided; And be formed on this insulating barrier and in the face of the vacuum space the film metal electrode, wherein said insulating barrier has the field stabilized zone that a conductivity is higher than said insulating barrier at least.
In electron emission display device according to the present invention, said stabilized zone is arranged on the interface between film metal electrode and the insulating barrier.
In electron emission display device according to the present invention, said stabilized zone is arranged at insulating barrier and electronics and provides on the interface between the layer.
In electron emission display device according to the present invention, said stabilized zone is arranged at the zone line of said insulating barrier.
In electron emission display device according to the present invention, lamellar field stabilized zone and insulating barrier arranged in that thickness direction is alternately laminated.
In electron emission display device according to the present invention, the thickness of said stacked lamellar field stabilized zone reduces gradually along thickness direction.
In electron emission display device according to the present invention, the thickness of said stacked a plurality of stabilized zones increases gradually along thickness direction.
According to electron emission device of the present invention with said structure because stabilized zone is the electric field homogenizing in the insulating barrier, so the emission current of device stablized by the field stabilized zone, even also like this when in insulating barrier, having impurity and/or defective.Therefore, when this electron emission device is used as display device, very high brightness can be provided, and can suppresses the consumption of drive current, thereby reduce hot generation, and can reduce the load of component driving circuit.In addition, because insulating barrier has thicker thickness, be not easy to form therein through hole, rate improves so it manufactures a finished product.
Electron emission device of the present invention is the electronics emitting diode of a plane or point-like, can be applicable to the source, scanning as pixel vacuum tube or vacuum tube or transmits the high speed device of the electron emission source, vacuum microelectronic device etc. of electron microscope.In addition, this electron emission device can also can be used as high-speed switching devices as the electromagnetic small microwave tube or the diode of emission millimeter or submillimeter wavelength.
Fig. 1 is the constructed profile of the electron emission device according to the present invention;
Fig. 2 is the curve chart of showing emission current and realizing the dependence of the field stabilized zone thickness in the electron emission device insulating barrier of the present invention;
Fig. 3 is the curve chart that the emission current of the electron emission device of displaying embodiment of the present invention fluctuates in time;
Fig. 4 is the curve chart that the emission current of the electron emission device of displaying contrast scheme fluctuates in time;
Fig. 5 shows the curve chart that concerns between the driving voltage Vd of electron emission device of diode current Id and emission current Ie and one embodiment of the invention;
Fig. 6-10 all is a local amplification profile of showing electron emission device according to another embodiment of the invention, shows the adjacent area of a stabilized zone; And
Figure 11 is a perspective illustration of showing electron emission display device according to an embodiment of the invention.
Describe the preferred embodiments of the invention in detail below with reference to each accompanying drawing.
The inventor finds that when comprising the electron emission device of thin dielectric layer with institute's making alive driving, owing to exist impurity and/or defective to cause the electric field disorder in the insulating barrier, this character has caused the instability of electronics emission again.For addressing this problem, the inventor proposes to provide between the layer at insulating barrier and electronics, or between film metal electrode and the insulating barrier, or inserts a stabilized zone between the insulating barrier or the high conductivity film is stablized this electric field.
This high conductivity film of consistent electric field stabilized zone on the spot has the thickness of 1nm-100nm.The part that stabilized zone is arranged at insulating barrier perhaps on many parts, maybe can be divided into insulating barrier three parts, is inserted with the high conductivity film between the each several part.The conductivity of this high conductivity film is higher than as silicon oxide sio
xDeng the conductivity of insulating barrier, wherein subscript x represents atomic ratio.
As shown in Figure 1, realize that electron emission device of the present invention has silicon (Si) electronics layer 12, silicon dioxide (SiO are provided
2) insulating barrier 13 and in the face of gold (Au) the film metal electrode 15 of vacuum space, they stack gradually or are formed on the electrode surface of glass devices substrate 10, are pre-formed the Ohmic electrode 11 that is made of aluminium (Al), tungsten (W), titanium nitride (TiN), copper (Cu), chromium (Cr) etc. on the glass devices substrate.Specifically, provide in the layer 12 at electronics, the zone is provided with by the field stabilized zone 14 that constitutes as high-conductivity metals such as Al, W therebetween.Second substrate 1 is fixed on first substrate 10, makes to accompany the vacuum space between the two.Provide transparent passive electrode 2 and corresponding to red (R), green (G) and blue (B) look emitted fluorescence material at the inner surface of second substrate 1.
Insulating barrier 13 deposits are thicker, so that have 50nm or the above thickness of 50nm.This electron emission device can be used as a diode, its lip-deep film metal electrode 15 with just apply voltage Vd and link to each other, back electrode is Ohmic electrode 11 ground potentials.Be added to 15 at Ohmic electrode 11 and film metal electrode so that layer 12 supplies electrons to be provided to electronics at for example 90 volts voltage Vd, have diode current Id.Because insulating barrier 13 has high resistance, so the major part of applied field is added on the insulating barrier 13.Electronics is advanced to film metal electrode 15 in the conduction band of insulating barrier 13.Because very strong electric field, near some electronics that arrives the film metal electrode 15 passes film metal electrode 15, emits and enters said vacuum space.
The high voltage Vc that the electronics e (emission current Ie) that sends from film metal electrode 15 is added on the relative passive electrode (transparency electrode) 2 very soon quickens, and is collected at passive electrode 2.If scribble fluorescent material on the passive electrode 2, then can be observed corresponding visible light.
Although Si provides the material of layer 12 effective especially as the electronics of electron emission device, but also can use the elemental semiconductor or the compound semiconductor of elements such as IV family, III-V family, II-VI family, for example germanium (Ge), germanium silicon compound (Ge-Si), carborundum (SiC), GaAs (GaAs), indium phosphide (InP) or cadmium selenide (CdSe) or CuInTe
2
Although can be used as the material that electronics provides layer as metals such as Al, Au, Ag and Cu, also can use Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Ga, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, Ln, Sn, Ta, W, Re, Os, Ir, Pt, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu etc.
Silicon oxide sio
x(subscript x represents atomic ratio) can be used as the dielectric substance of insulating barrier 13, also can use as LiO
x, LiN
x, NaO
x, KO
x, RbO
x, CsO
x, BeO
x, MgO
x, MgN
x, CaO
x, CaN
x, SrO
x, BaO
x, ScO
x, YO
x, YN
x, LaO
x, LaN
x, CeO
x, PrO
x, NdO
x, SmO
x, EuO
x, GdO
x, TbO
x, DyO
x, HoO
x, ErO
x, TmO
x, YbO
x, LuO
x, TiO
x, ZrO
x, ZrN
x, HfO
x, HfN
x, ThO
x, VO
x, VN
x, NbO
x, TaO
x, TaN
x, CrO
x, CrN
x, MoO
x, MoN
x, WO
x, WN
x, MnO
x, ReO
x, FeO
x, FeN
x, RuO
x, OsO
x, CoO
x, RhO
x, IrO
x, NiO
x, PdO
x, PtO
x, CuO
x, CuN
x, AgO
x, AuO
x, ZnO
x, CdO
x, HgO
x, BO
x, BN
x, AlO
x, AlN
x, GaO
x, GaN
x, InO
x, SiN
x, GeO
x, SnO
x, PbO
x, PO
x, PN
x, AsO
x, SbO
x, SeO
x, TeO
xDeng metal oxide or metal nitride etc.
And, as diamond, fullerene (Fullerence, C
2n) wait carbon or as Al
4C
3, B
4C, CaC
2, Cr
3C
2, Mo
2C, MoC, NbC, SiC, TaC, TiCVC, W
2C, WC, metal carbides such as ZrC also can be used as the dielectric substance of insulating barrier 13.Fullerene (C
2n) constitute by carbon atom.Representative C
60It is the basket molecule of sphere that is known as the football molecule.Known C in addition
32-C
960Deng.O in the above-mentioned chemical formula
x, N
xDeng in subscript x represent atomic ratio, below also be like this.
The thickness of insulating barrier 13 can be 50nm or more than the 50nm, is preferably 100-1000nm.
Metal Pt, Au, W, Ru and Ir are effective as the material of the film metal electrode 15 on the electronics emitting side.In addition, Be, C, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Y, Zr, Nb, Mo, Tc, Rh, Pd, Ag, Cd, In, Sn, Ta, Re, Os, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu etc. also can be used as the film metal electrode.
The stabilized zone 14 of the high conductivity film field in the insulating barrier 13 constitutes by being selected from following material with the resistivity that is lower than insulating barrier 13, for example, and Li, Be, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu etc. or metal or semiconductor or its oxide.
As Al
2O
3, Si
3N
4Can replace the material of glass with potteries such as BN as device substrate 10.
Although sputter is effective especially when preparing these layers and substrate, also can use vacuum deposition, CVD (chemical vapor deposition), laser ablation, MBE (Molecular Beam Epitaxy, molecular beam epitaxy) and ion beam sputtering.
Comprise that by the first embodiment manufacturing electronics provides layer and each electronics to provide layer all to have the electron emission device of the present invention of a stabilized zone, and specifically detect their feature.
At first, as shown in Figure 1, the Si electronics that sputtering deposit is thick 5 microns on the electrode surface 11 of every sheet glass substrate provide the layer 12, on the glass substrate in advance by sputtering deposit the W Ohmic electrode 11 of thick 300nm.Make the such initial substrate of multi-disc similarly.
Then, the electronics every initial substrate provides the thick SiO of 195nm of being of difference deposit on the layer 12
xInsulating barrier 13.Then, the field stabilized zone 14 of the thick 5nm of deposit on each insulating barrier 13, then, the SiO of the thick 200nm of deposit again on the stabilized zone 14 of the field of every initial substrate
xInsulating barrier 13.In this way, make the device of first embodiment, its midfield stabilized zone 14 is clipped between similar two insulating barriers 13 of thickness.At this moment, the thickness with field stabilized zone 14 is that 0nm (contrast scheme), 5nm, 15nm, 30nm, 40nm and 50nm make the multi-disc initial substrate respectively, and making the gross thickness of an insulating barrier 13 and a stabilized zone 14 simultaneously is 100nm, 400nm and 800nm.Contrast the electron emission device of scheme for the 0nm deposit by the thickness of field stabilized zone 14.Provide multi-disc second initial substrate like this.Every layer all is by using Ar, Kr or Xe or their gaseous mixture, or in fact by a kind of of these rare gas and the O that sneaks into wherein
2, N
2Deng sputtering deposit, sputtering condition is: air pressure is 0.1-100 milli torr, preferred 0.1-20 milli torr, and deposition rate is 0.1-1000nm/min, preferred 0.5-100nm/min.Replace sputtering target and sputtering condition suitably, device is spattered in control, thereby obtains single or multiple lift structure, amorphous or crystalline phase, crystallite dimension and the atomic ratio of target insulating barrier 13.
Utilize the SiO of this embodiment of X-ray diffraction analysis
xInsulating barrier, the result demonstrates some halation intensity (halo intensity) Ia that is caused by amorphous phase.Can suppose SiO according to this result
xInsulating barrier partly is made of amorphous phase.
At last, at the amorphous SiO of each substrate
xForm the Pt film metal electrode 10 of thick 10nm on the laminar surface by sputter, thereby a plurality of device substrate are provided.
Simultaneously, the preparation transparent substrate, its each the ITO passive electrode that is formed at the transparent glass substrate inboard is all arranged, and have by common mode be formed on the passive electrode corresponding to R, G or B look emitted fluorescence material.
Assemble the electron emission device of first embodiment, in therein each, device substrate and transparent substrate are all supported by a separately 10mm parallel to each other at interval, in this way, film metal electrode 15 is in the face of passive electrode 2, and a space, the vacuum degree in space are arranged between the two is 10
-7Torr or 10
-5The vacuum of Pa constitutes.
Then, on prepared electron emission device, add in the driving voltage Vd of 0-200V, measure the diode current Id and the emission current Ie of a plurality of electronic devices.
The results are shown in Fig. 2, Fig. 2 shows at thickness of insulating layer and is respectively under the situation of 100nm, 400nm and 800nm, and emission current Ie is with respect to the variation of field stabilized zone thickness.From as known in the figure, should be understood that to apply 200V or the following voltage of 200V, comprise that gross thickness is the electron emission device of one group of above insulating barrier of 50nm or 50nm and high conductivity layer, can obtain 1 * 10
-6A/cm
2Or higher emission current, wherein said gross thickness is preferably 100-800nm, and the high conductivity layer is 50nm or below the 50nm.Should be understood that from comprising that the electronics with stabilized zone provides layer and thickly is 50nm or more than the 50nm or be preferably 100nm or the SiO more than the 100nm
xThe device of dielectric insulation layer can obtain this good result.
About its insulating layer thickness is an embodiment of 50nm or the above-mentioned device more than the 50nm, by between passive electrode that scribbles fluorescent material and film metal electrode, adding the voltage of about 4kV, can observe and the corresponding evenly fluorescent graphic of film metal electrode shape.This shows from amorphous SiO
xThe electronics emission of layer is uniformly, and its motion is for highly linear, and these devices can be used as the electronics emitting diode, or the electromagnetic laser diode of light-emitting diode or emission millimeter or submillimeter wavelength, reach high-speed switching devices.
By scanning electron microscopy (SEM), can observe the SiO that sputter obtains during above-mentioned depositing technics
xThe surface of insulating barrier can be found to be about the micro-structural that the grain surface of 20nm constitutes by diameter.By SiO
xAs if the micro-structural that the grainiess of insulating barrier constitutes caused that punchthrough current flows through the strange phenomenon of the insulating barrier more than thick 50nm or the 50nm.Although SiO
xOriginally be insulator, but because the defective of contiguous its generation or the multipotency band that the impurity in the insulating barrier forbidden band has caused low potential.Suppose electronics one by one by the multipotency band of low potential, the result is that they will be by thick 50nm of being or the above insulating barrier of 50nm so.
In addition, measure the emission current Ie existence fluctuation of the electron emission device of embodiment with high conductivity layer and the contrast scheme that does not have the high conductivity layer.Fig. 3 shows the emission current fluctuation in time of the electron emission device with high conductivity layer.Fig. 4 shows the emission current fluctuation in time that does not have the contrast of high conductivity layer scheme electron emission device.As can be known, compare with the device of contrast scheme from these figure, the fluctuation with embodiment device emission current of high conductivity layer is restricted, and makes emission current very stable.Should be appreciated that, the high conductivity layer makes and is become evenly by the added electric field of voltage Vd in the insulating barrier, so compare with the device of the contrast scheme that does not have the high conductivity layer, insulating barrier and high conductivity layer group provide layer to be transferred to the film metal electrode from electronics many electronics.As a result, the emission current Ie of device becomes very stable.
Fig. 5 has showed diode current Id and the emission current Ie relation property curve with respect to the driving voltage Vd of the electron emission device that has the high conductivity layer in the insulating barrier.As shown in Figure 5, should be appreciated that diode current Id represents a kind of hysteresis characteristic.The pressure drop of diode current Id occurs in the starting point of emission current Ie, and emission current Ie increases then.
Remove as described in the above-mentioned embodiment, provide the zone line of layer to be provided with outside two-layer the stabilized zone at electronics, as shown in Figure 6, can also be at the layout setting field stabilized zone 14 between insulating barrier 13 and the film metal electrode 15.As shown in Figure 7, stabilized zone 14 can also be arranged at insulating barrier 13 and electronics interface between the layer 12 is provided.
In addition, shown in Figure 8 as the local amplification profile of showing device is provided with two-layer or more multi-layered field stabilized zone 14 in insulating barrier 13, and insulating barrier 13 is divided into three parts or more parts as sandwich construction.In other words, at alternately laminated lamellar field stabilized zone of the thickness direction of device and insulating barrier.In addition, can form multilayer laminated field stabilized zone 14, their spacing upwards be reduced gradually (or increase) on thickness direction.
As shown in Figure 9, can in insulating barrier 13, form a plurality of stacked field stabilized zones 14, their thickness upwards be reduced gradually (or increase) on thickness direction.
Figure 10 also shows an embodiment again, can form a stabilized zone 14 by sputter in insulating barrier 13, as the dispersion area of high conductive material dopant.This high conduction region also can be used for promoting the transmission of electronics from insulating barrier 13 to film metal electrode 15.In addition, high conductivity district 14 forms and makes the density of dopant that the gradient be arranged, thereby during 14 more close film metal electrodes 15, has higher or more low-density high conductivity dopant in the high conductivity district.
Should understand from these results, insulating barrier with stabilized zone is that effectively this electron emission device comprises: the electronics that is made of metal or semiconductor provides layer for utilizing the low voltage that applies stablizing the electron emission device that drives under the emission current; Thick is 50nm or the above insulating barrier of 50nm; And in the face of the film metal electrode of vacuum space, thereby be added on electronics when providing between layer and the film metal electrode at voltage, this electron emission device emitting electrons.
Figure 11 has showed the electron emission display device of one embodiment of the invention.This embodiment comprises a pair of transparent substrate 1 and device substrate 10, and they face with each other, and has vacuum space 4 therebetween.Shown in electron emission display in, on the inner surface of transparent glass substrate 1 or display surface (in the face of back of the body substrate 10), be formed with a plurality of transparent passive electrodes 2 that for example form side by side by tin indium oxide (so-called ITO), tin oxide (SnO), zinc oxide (ZnO) etc.Passive electrode 2 can integrally form.The transparent passive electrode of capturing institute's electrons emitted divides three groups of arrangements, is associated with red (R), green (G) and blue (B) chrominance signal, so that colored display panel is provided, and voltage is added in respectively on these three passive electrodes.Therefore, be formed with fluorescence coating 3R, 3G and 3B corresponding to R, G, B look emitted fluorescence material respectively on three passive electrodes 2, passive electrode 12 is in this way in the face of vacuum space 4.
In the face of the inner surface of the device substrate such as glass 10 of transparent glass substrate 1 (promptly, said inner surface is in the face of transparent glass substrate 1) on, form a plurality of Ohmic electrodes 11 side by side by auxiliary insulating layer 18,1 of device substrate 10 and transparent glass substrate have vacuum space 4.Auxiliary insulating layer 18 is by as SiO
2, SiN
x, Al
2O
3Or insulator such as AlN constitutes, and is used to prevent the harmful effect (for example impurity such as basic component deviates from or coarse substrate surface) of 10 pairs of devices of device substrate.A plurality of electron emission device S are formed on the Ohmic electrode 11.For contiguous film metal electrode 15 is electrically connected to each other, on part film metal electrode 15, form a plurality of bus electrodes 16, they are parallel to each other and perpendicular to Ohmic electrode 11.Each electron emission device S comprises that the electronics that is formed at successively on the relevant Ohmic electrode 11 provides layer 12, has the insulating barrier 13 and the film metal electrode 15 of a stabilized zone 14.Film metal electrode 15 is in the face of vacuum space 4.Formation has second auxiliary insulating layer 17 of opening, is isolated into a plurality of electron-emitting areas with the surface with film metal electrode 15.This second auxiliary insulating layer 17 covers bus electrode 16, to prevent unnecessary short circuit.
The material of Ohmic electrode 11 has Au, Pt, Al, the W etc. that are generally used for IC wiring, and has homogeneous thickness, so that provide the basic electric current that equates for each device.
According to the principle of electronics emission, better be that the material of film metal electrode 15 has than low work function φ, and thinner.In order to improve electronic transmitting efficiency, the material of film metal electrode 15 should be the I family in the periodic table of elements or the metal of II family, for example Mg, Ba, Ca, Cs, Rb, Li, Sr, and element similar with it also is effectively, can also be with the alloy of these elements.For making film metal electrode 15 very thin, the material of film metal electrode 15 should be chemically stable and have high conductivity; For example, can use Au, Pt, Lu, Ag and the Cu of simple substance or their alloy.Also can be on these metals or the above-mentioned low workfunction metal that wherein applies or mix.
The material of bus electrode 16 can be common Au, Pt as the integrated circuit (IC) wiring, Al etc., and its thickness should be enough to provide essentially identical electromotive force for each device, and suitable thickness is the 0.1-50 micron.
The drive system of display device of the present invention can be used simple matrix system or active matrix system.
Claims (14)
1. electron emission device comprises:
The electronics that is made of metal or semiconductor provides layer;
Be formed at electronics insulating barrier on the layer is provided; And
Be formed at the film metal electrode of also facing the vacuum space on this insulating barrier,
It is characterized in that, said insulating barrier have at least a conductivity be higher than said insulating barrier the field stabilized zone, thereby, electric field be added on electronics provide the layer and thin film metal layer between the time, this electron emission device emitting electrons.
2. electron emission device as claimed in claim 1, wherein said stabilized zone are arranged on the interface between film metal electrode and the insulating barrier.
3. electron emission device as claimed in claim 1, wherein said stabilized zone are arranged at insulating barrier and electronics and provide on the interface between the layer.
4. electron emission device as claimed in claim 1, wherein said stabilized zone is arranged at the zone line of said insulating barrier.
5. electron emission device as claimed in claim 1 wherein has lamellar field stabilized zone and an insulating barrier in that thickness direction is alternately laminated.
6. electron emission device as claimed in claim 5, the thickness of wherein said stacked lamellar field stabilized zone reduces gradually along thickness direction.
7. electron emission device as claimed in claim 5, the thickness of wherein said stacked lamellar field stabilized zone increases gradually along thickness direction.
8. electron emission display device comprises:
A pair of first and second substrates that face with each other and have the vacuum space between it;
Be arranged at first on-chip a plurality of electron emission devices;
Be arranged at the passive electrode of second substrate; And
Be formed at the fluorescence coating on the passive electrode,
Each electron emission device comprises: metal or semi-conductive electronics provide layer; Be formed at electronics insulating barrier on the layer is provided; And be formed on this insulating barrier and in the face of the film metal electrode of vacuum space, wherein said insulating barrier has the field stabilized zone that one deck conductivity is higher than said insulating barrier at least.
9. electron emission display device as claimed in claim 8, wherein said stabilized zone are arranged on the interface between film metal electrode and the insulating barrier.
10. electron emission display device as claimed in claim 8, wherein said stabilized zone are arranged at insulating barrier and electronics and provide on the interface between the layer.
11. electron emission display device as claimed in claim 8, wherein said stabilized zone is arranged at the zone line of said insulating barrier.
12. electron emission display device as claimed in claim 8 wherein has lamellar field stabilized zone and an insulating barrier in that thickness direction is alternately laminated.
13. as the electron emission display device of claim 12, the thickness of wherein said stacked a plurality of stabilized zones reduces gradually along thickness direction.
14. as the electron emission display device of claim 12, the thickness of wherein said stacked a plurality of stabilized zones increases gradually along thickness direction.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB98120466XA CN1137501C (en) | 1998-10-22 | 1998-10-22 | Electron emission device and display device using such electron emission device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB98120466XA CN1137501C (en) | 1998-10-22 | 1998-10-22 | Electron emission device and display device using such electron emission device |
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| Publication Number | Publication Date |
|---|---|
| CN1252612A true CN1252612A (en) | 2000-05-10 |
| CN1137501C CN1137501C (en) | 2004-02-04 |
Family
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|---|---|---|---|
| CNB98120466XA Expired - Fee Related CN1137501C (en) | 1998-10-22 | 1998-10-22 | Electron emission device and display device using such electron emission device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795296A (en) * | 2014-01-20 | 2015-07-22 | 清华大学 | Electron emission device and display |
| CN104795295A (en) * | 2014-01-20 | 2015-07-22 | 清华大学 | Electron emission source |
| CN104795293A (en) * | 2014-01-20 | 2015-07-22 | 清华大学 | Electron emission source |
| CN104795298A (en) * | 2014-01-20 | 2015-07-22 | 清华大学 | Electron emission device and display |
| CN105684097A (en) * | 2013-10-28 | 2016-06-15 | 费罗公司 | Dielectric pastes for aluminum substrates |
-
1998
- 1998-10-22 CN CNB98120466XA patent/CN1137501C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105684097A (en) * | 2013-10-28 | 2016-06-15 | 费罗公司 | Dielectric pastes for aluminum substrates |
| CN105684097B (en) * | 2013-10-28 | 2019-01-11 | 福禄公司 | Dielectric paste for aluminum substrate |
| CN104795296A (en) * | 2014-01-20 | 2015-07-22 | 清华大学 | Electron emission device and display |
| CN104795295A (en) * | 2014-01-20 | 2015-07-22 | 清华大学 | Electron emission source |
| CN104795293A (en) * | 2014-01-20 | 2015-07-22 | 清华大学 | Electron emission source |
| CN104795298A (en) * | 2014-01-20 | 2015-07-22 | 清华大学 | Electron emission device and display |
| CN104795295B (en) * | 2014-01-20 | 2017-07-07 | 清华大学 | Electron emission source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1137501C (en) | 2004-02-04 |
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