CN1123906C - Electron emision device and displayer using said device - Google Patents

Abstract

The present invention relates to an electron emitting device with high electron emitting efficiency, which comprises an electron supply layer made of metal or semiconductors, an insulating layer formed on the electron supply layer, and thin film metal electrodes formed on the insulating layer. The film thickness of the insulating layer is at least 50 nm, and the electron supply layer is made of hydrogenated non-crystal silicon. When an electric filed is applied between the electron supply layer and the thin film metal, the electron emitting device emits electrons.

Description

The display unit of electron emitting device and this device of use

The present invention relates to the electron emission display of electron emitting device and this device of use.

In the electron emission display device field, known field emission shows that (FED) is a kind of planar transmit display unit of equipping cold cathode electron emission source array, and described cold cathode electron emission source does not need the negative electrode heating.For example use the emission principle of FED of the little protrusion cold cathode of Spindt type as follows: protrude array though FED has the Spindt type different with cathode ray tube (CRT), its emission principle and CRT are similar.In FED, electronics is drawn in the vacuum space by each gate electrode, and described gate electrode is separated by Spindt type negative electrode, and electron collision is coated in the fluorescent material on the transparent anode then, causes the light emission thus.

But the defective of this FED is that productivity ratio is low, and this is because very complicated as the manufacturing of the little Spindt type emitter array of cold cathode, and relates to many steps.

Another electron emitting device has metal-insulator-metal type (MIM) structure as the plane electronics emission source.The electron emitting device that has mim structure is included in the Al bottom as base stage that forms in order in the substrate, the Al that thickness is about 10nm ₂O ₃Insulating barrier and thickness are about the Au top layer of 10nm as climax.If the MIM device is placed under the comparative electrode in a vacuum, between Al bottom and Au top layer, apply a voltage, and simultaneously on electrode of opposite, apply an accelerating voltage, will from the Au top layer, launch some electronics so and arrive on the electrode of opposite.Even the electron emitting device with mim structure does not produce the emitting electrons of q.s yet.

For improving these defectives of MIM device emission, what consider usually is to make Al ₂O ₃Insulating barrier is several approximately nanometer thickness, and makes Al ₂O ₃Insulating barrier has uniform quality, so that Al ₂O ₃Interface between insulating barrier and the Au top layer is more even.

For producing thinner and more uniform insulating barrier, for example, a kind of method is to use the anodization method to control anode current, improves electron emission characteristic thus, described in Japanese patent application 7-65710 number.

But, even the electron emitting device that has with the mim structure of anodization manufactured also can only produce about 1 * 10 ^-5A/cm ²Emission current and about 1 * 10 ^-3Electronic transmitting efficiency.

Therefore, the purpose of this invention is to provide a kind of electron emission display that has the electron emitting device of high electronic transmitting efficiency and use this device.

Consider the extensive use of this electron emitting device, in electron emitting device, use silicon (Si) can improve electronics launch stability in the device effectively as the power supply sublayer, and use by amorphous silicon (a-Si) layer of sputtering method deposition and can boost productivity effectively, and thereby be very useful.But problem is that the character of a-Si layer is easy to be damaged by heat treatment, and this is because have many for example about 10 in this layer ²⁰/ cm ³Dangling bonds.Because heat treatment need be vacuum-packed with device, having many dangling bonds in the a-Si layer is one of obstacles of actual use electron emitting device demonstration.Therefore, another object of the present invention provides a kind of electron emission display that at high temperature has the electron emitting device of high stability and use this device.

For overcoming above-mentioned and other problem, the objective of the invention is to realize by electron emitting device according to embodiments of the present invention, wherein, according to the inventive system comprises:

The power supply sublayer made from metal or semiconductor;

The insulating barrier that on this power supply sublayer, forms; And

It is that on this insulating barrier, form and towards the film metal electrode of vacuum space,

This device is characterised in that the thickness of described insulating barrier is 50-1000nm, and described power supply sublayer is to be made by the amorphous silicon through hydrogenation, when between power supply sublayer and film metal, applying electric field, and this electron emitting device emitting electrons,

And described power supply sublayer is formed on the electrode surface of substrate.

In electron emitting device according to the present invention, described amorphous silicon through hydrogenation comprises through the amorphous carbonization silicon of hydrogenation and at least a in the amorphous silicon nitride of hydrogenation.

And use the display unit of electron emitting device to comprise according to the present invention:

A pair of opposed facing first and second substrates form a vacuum space between them;

A plurality of first suprabasil electron emitting devices that are arranged on;

Be arranged on the second suprabasil collector electrode; And

Be formed on the fluorescence coating on this collector electrode,

Each electron emitting device comprises with metal or semiconductor makes and is formed at power supply sublayer on the electrode surface of substrate; The insulating barrier that on this power supply sublayer, forms; And on this insulating barrier, form and towards the film metal electrode of vacuum space, wherein, the thickness of described insulating barrier is 50-1000nm, and described power supply sublayer is to be made by the amorphous silicon through hydrogenation.

In electron emission display according to the present invention, described amorphous silicon through hydrogenation comprises through the amorphous carbonization silicon of hydrogenation and at least a in the amorphous silicon nitride of hydrogenation.

The electron emitting device that has said structure according to the present invention, the dangling bonds of power supply in the sublayer reduces, and can improve the thermal stability of device like this, and because insulating barrier thicker thickness relatively, in wherein can producing perforation hardly, and thereby improved productivity ratio.

Electron emitting device of the present invention is the electronics emitting diode of plane or point-like, and can be used for the speeder of electron emission source, microelectronic vacuum device etc. as pixel vacuum tube or ball source, scanning or transmission electron microscope.In addition, this electron emitting device can be used as electromagnetic small microwave pipe or the diode of emission wavelength for millimeter or submillimeter, also can be used as high-speed switching arrangement.

Below in conjunction with accompanying drawing the preferred embodiments of the invention are described in detail, wherein:

Fig. 1 is the schematic sectional view of the electron emitting device according to the present invention;

Fig. 2 be the emission current of explanation electron emitting device with in the process of making electron emission display, bake according to the present invention or temperature when heating described the device between the curve chart of relation;

Fig. 3 is the curve chart of the relation between the insulating barrier thickness in explanation emission current and the electron emitting device according to the present invention;

Fig. 4 is the curve chart of the relation between the insulating barrier thickness in explanation electronic transmitting efficiency and the electron emitting device according to the present invention;

Fig. 5 is explanation diode current Id and the emission current Ie curve chart with respect to the relation of the driving voltage Vd of the electron emitting device of the embodiment according to the present invention; And

Fig. 6 is the schematic perspective view that shows the electron emission display of the embodiment according to the present invention.

As shown in Figure 1, comprise that electron emitting device in the present invention has silicon (Si) power supply sublayer 12, silicon dioxide (SiO ₂) insulating barrier 13 and towards gold (Au) the film metal electrode 15 of vacuum space, they are lamination or be formed on the electrode surface of device substrate 10 of glass in order, is pre-formed the ohmic properties electrode of being made up of aluminium (Al), tungsten (W), titanium nitride (TiN), copper (Cu), chromium (Cr) etc. 11 on this substrate of glass.Matrix, power supply sublayer 12 is by the amorphous silicon (a-Si: H) make through hydrogenation.Insulating barrier 13 is deposited as thicker thickness relatively, and its thickness is 50nm or bigger.Second substrate 1 is fixed in first substrate 10, between them, to form the vacuum space.Replace glass, can use as Al ₂O ₃, Si ₃N ₄With the material of pottery such as BN as device substrate 10.

This electron emitting device can be regarded as diode, and wherein, the voltage Vd that the film metal electrode 15 and the forward of its surface apply links to each other, and the bottom surface, promptly ohmic properties electrode 11 links to each other with ground potential.When in power supply sublayer 12, providing electronics, produce diode current at the voltage Vd that applies 90V for example between ohmic properties electrode 11 and the film metal electrode 15.Because the resistance of insulating barrier 13 is big, so the most electric field that applies is applied on the insulating barrier 13.Move towards film metal electrode 15 in the conductive strips of electronics in insulating barrier 13.Because electric field is stronger, some electronics near film metal electrode 15 pass through from film metal electrode 15, and launch electronics in the vacuum space.

The high voltage Vc that the electronics e that discharges from film metal electrode 15 (emission current Ie) is applied on the relative collector electrode (transparency electrode) 2 at once quickens, and is captured at collector electrode place.If on collector electrode 2, apply fluorescent material, promptly can be observed corresponding visible light.

Particularly (a-Si: H), wherein nearly all a-Si dangling bonds is all stopped by hydrogen atom the used effective material in the power supply sublayer 12 of electron emitting device through the amorphous silicon of hydrogenation.In addition, through the amorphous carbonization silicon of hydrogenation (a-SiC: H) also can be effectively as the material of power supply sublayer 12, in this carborundum, the part silicon atom is replaced by carbon atom.Moreover, through the amorphous silicon nitride of hydrogenation (a-SiN: H) also can be effectively as the material of power supply sublayer 12, in this silicon nitride, the part silicon atom is replaced by nitrogen-atoms.For example, at Si: the H atomic ratio is 85: 15 a-Si: in the H layer, dangling bonds is reduced to 10 ¹⁵/ cm ³The order of magnitude.In the amorphous silicon layer, hydrogen atom is than being preferably 10% or more, the more significant reduction of dangling bonds to occur.For example, use the silicon target of doping Sb, sputter gas is argon and hydrogen Ar: H=6: 2, and its total pressure is 8mTorr, sputter rate is 50nm/min, forms the a-Si that is made up of 85%Si and 15%H by sputtering method: the H layer.Analyze the a-Si of gained: the dangling bonds of H layer is measured as 2 * 10 with ESR ¹⁵/ cm ³

Amorphous carbonization silicon (a-Si through hydrogenation _0.7C _0.3: H) also can be used as the power supply sublayer effectively, but its dangling bonds is 10 ¹⁸/ cm ³, greater than the dangling bonds of a-Si: H, this is because do not have the dehydrogenation reaction or not damage in heating process in the time of 500 degrees centigrade.In addition, through the amorphous silicon nitride (a-Si of hydrogenation _0.68N _0.32: H) also can be observed similar advantageous effect, and can be effectively as the power supply sublayer.

Comprise a-Si: the electron emitting device of H power supply sublayer can tolerate and be lower than 300 degrees centigrade temperature, can bake under this equitemperature or heat like this.The emission current of this type of electron emitting device is 1 * 10 ^-6A/cm ²Or bigger, this is very effective in being lower than 300 degrees centigrade actual use.At 300 degrees centigrade or when higher, the dehydrogenation of beginning a-Si: H, and be damaged thus.Carbon atomic ratio in the amorphous carbonization silicon of hydrogenation preferably is lower than 50%, and this is because can expect to reduce dangling bonds when the carbon of these scopes.

For forming a-Si: H, a-Si _XN _1-X: H and a-Si _XC _1-X: the power supply sublayer of H (wherein, X represents atomic ratio), can use CVD, vacuum moulding machine, sputtering method.

A-Si: the H layer is only to use main formation gas SiH ₄Form by the CVD method.A-Si _XN _1-X: the H layer is to use and is added on main formation gas SiH ₄In NH ₃Form by the CVD method.A-Si _XC _1-X: the H layer is to use and is added on main formation gas SiH ₄In CH ₄Form by the CVD method.If use the CVD method, the interpolation of dopant is by mixing as B ₂H ₆, PH ₃Deng impurity gas regulate, to regulate the resistance value of described layer.

In vacuum deposition method, matrix Si, the Si that will be used to deposit _XN _1-XOr Si _XC _1-XAnd H ₂Be added in the vacuum simultaneously.

If the use sputtering method is with the Si target with comprise Ar and H ₂Sputter gas form a-Si: the H layer.For forming a-Si _XN _1-X: the H layer, use the Si target and comprise Ar and N ₂Sputter gas.Perhaps, use Si _XN _1-XTarget and the sputter gas that comprises Ar are to form a-Si _XN _1-X: the H layer.For forming a-Si _XC _1-X: the H layer, use the Si target and comprise Ar and CH ₃Sputter gas.Perhaps, use Si _XC _1-XTarget and the sputter gas that comprises Ar are to form a-Si _XC _1-X: the H layer.And, can use Si and C target to form a-Si by the cosputtering method _XC _1-X: the H layer.When adding dopant, must use the Si target that mixes with relevant dopant such as B, P, As, Sb etc.

Si oxide SiO _X(wherein X represents atomic ratio) can also can use metal oxide and metal nitride, as LiO effectively as the dielectric material of insulating barrier 13 _X, LiN _X, NaO _X, KO _X, RbO _X, CsO _X, BeO _X, MgO _X, MgN _X, CaO _X, CaN _X, SrO _X, BaO _X, ScO _X, YO _X, YN _X, LaO _X, LaN _X, CeO _X, PrO _X, NdO _X, SmO _X, EuO _X, GdO _X, TbO _X, DyO _X, HoO _X, ErO _X, TmO _X, YbO _X, LuO _X, TiO _X, ZrO _X, ZrN _X, HfO _X, HfN _X, ThO _X, VO _X, VN _X, NbO _X, TaO _X, TaN _X, CrO _X, CrN _X, MoO _X, MoN _X, WO _X, WN _X, MnO _X, ReO _X, FeO _X, FeN _X, RuO _X, OsO _X, CoO _X, RhO _X, IrO _X, NiO _X, PdO _X, PtO _X, CuO _X, CuN _X, AgO _X, AuO _X, ZnO _X, CdO _X, HgO _X, BO _X, BN _X, AlO _X, AlN _X, GaO _X, GaN _X, InO _X, SiN _X, GeO _X, SnO _X, PbO _X, PO _X, PN _X, AsO _X, SbO _X, SeO _X, TeO _XDeng.

Carbon such as diamond, Fullerene (C _2n) etc., perhaps metal carbides such as Al ₄C ₃, B ₄C, CaC ₂, Cr ₃C ₂, Mo ₂C, MoC, NbC, SiC, TaC, TiC, VC, W ₂C, WC, ZrC etc. also can be used as the dielectric material of insulating barrier 13 effectively.Fullerene (C _2n) form by carbon atom.Representational C ₆₀Be the basket molecule of spherical surface, be known as the football molecule.Also known have a C ₃₂-C ₉₆₀Deng.O in the above-mentioned chemical molecular formula _X, N _XDeng in X represent atomic ratio, below also like this.

The thickness of insulating barrier 13 can be 50nm or bigger, preferably in the scope of 100-1000nm.

Metal Pt, Au, W, Ru and Ir can be used as the material of the film metal electrode 15 on the electronics emitting side effectively.In addition, also can use the material as the film metal electrode such as Be, C, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Y, Zr, Nb, Mo, Tc, Rh, Pd, Ag, Cd, In, Sn, Ta, Re, Os, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu.

Material useful ceramics material such as Al except that plastics of device substrate 10 ₂O ₃, Si ₃N ₄, BN.

Though sputtering method can be used to make above-mentioned layer and substrate especially effectively, also can use vacuum moulding machine, CVD (chemical vapour deposition (CVD)), laser ablation, MBE (molecular beam oriented growth) and ion beam sputtering effectively.

Comprise a-Si, a-Si: H and a-Si according to the present invention _0.7C _0.3: the electron emitting device of H power supply sublayer can be respectively as the first embodiment manufacturing, and their performance of particular exam.

At first, by sputter respectively on the electrode surface of glass device substrate 10 deposit thickness be a-Si, the a-Si of 5.0 μ m: H and a-Si _0.7C _0.3: the H sublayer that powers, by sputtering sedimentation thickness W being arranged in advance in each substrate is the ohmic properties electrode of 300nm.Make the elementary substrate of a plurality of the type.

Then respectively by depositing SiO on the power supply sublayer that sputters at elementary substrate _XInsulating barrier changes its thickness simultaneously in the scope of 25-1000nm.Like this, make a plurality of second elementary substrate.Use Ar, Kr, Xe or their mixture, perhaps basically by one of above rare gas and O ₂, N ₂Deng or the admixture of gas formed of their mixture, be that 0.1-100mTorr, preferred 0.1-20mTorr and deposition rate are under the sputtering condition of 0.1-1000nm/min, preferred 0.5-100nm/min at gas pressure, by each SiO of sputtering sedimentation _XInsulating barrier.

At last, by sputtering at the amorphous SiO of each substrate _XDeposit thickness is the Pt film metal electrode of 10nm on the surface of layer, and the multiple arrangement substrate is provided thus.

Simultaneously, the preparation transparent substrates, this transparent substrates all has the ITO collector electrode that is formed on the clear glass substrate inboard, and the fluorescence coating corresponding to the fluorescent material of R, G or B color emission that forms on collector electrode by conventional method is arranged.

The assembling electron emitting device, wherein, device substrate and transparent substrates support and are parallel to each other with pole and separate 10mm, so that film metal electrode 15 is towards collector electrode 2, and gap are wherein reached 10 ^-7Torr or 10 ^-5The vacuum of Pa.

Next, heating or baked the gained electron emitting device 1 hour in vacuum environment under the temperature of 25 ℃, 200 ℃, 350 ℃ and 500 ℃ respectively.

Measure diode current Id and emission current Ie then, on the electron emitting device that has prepared, apply the driving voltage Vd of 0-200V simultaneously through the multiple arrangement of heating and cooling corresponding to baking temperature.

Fig. 2 illustrates the emission current of gained electron emitting device and bakes in manufacture process or heat relation between the temperature in described when device.In Fig. 2, the curve representative of zero expression has the emission current value of each device of a-Si power supply sublayer, and wherein the emission current value descends fast with the rising of baking temperature.and ● the curve of expression is represented respectively has a-Si: H and a-Si _0.7C _0.3: the emission current value of the device of H power supply sublayer, even wherein these devices still keep 1 * 10 after 300 ℃ of heating ^-6A/cm ²Or bigger emission current.As can be seen from this figure, has a-Si _0.7C _0.3: the device of H power supply sublayer has stable emission current, and its current value is 1 * 10 ^-4A/cm ²

Fig. 3 and Fig. 4 illustrate that emission maximum electric current I e and maximum electron emission effciency (Ie/Id) are respectively with respect to having a-Si: H and a-Si _0.7C _0.3: the variation during the insulating barrier thickness (25-1000nm) of the device of H power supply sublayer applies the driving voltage Vd of 0-200V this moment on the electron emitting device that has prepared.Can obviously find out SiO from Fig. 3 and Fig. 4 ₂Layer thickness is that the device of 50-1000nm shows 1 * 10 ^-6A/cm ²Emission maximum electric current and about 1 * 10 ^-3The maximum electron emission effciency.

Be appreciated that from these results, by the power supply sublayer of making through the amorphous silicon of hydrogenation for comprising that the power supply of metal or semiconductor sublayer, thickness are 50nm or bigger insulating barrier and are effective towards the electron emitting device of the film metal electrode of vacuum space, like this, but emitting electrons when this electron emitting device applies voltage between power supply sublayer and film metal electrode.

Fig. 5 illustrates diode current Id and the emission current Ie relation with respect to the driving voltage Vd of electron emitting device, and described electron emitting device comprises that thickness is the Al ohmic properties electrode of 300nm, is the SiO of 400nm by the power supply sublayer of making through the amorphous silicon of hydrogenation, thickness _xInsulating barrier and thickness are the Au film metal electrode of 10nm.As can be seen from Figure 5, diode current Id has hysteresis property.In the figure, the voltage drop of diode current Id appears at the starting point of emission current Ie, and emission current Ie raises then.

The voltage that between the collector electrode of fluorescent material coating and film metal, applies about 4KV in an embodiment of said apparatus, the thickness of insulating barrier is 50nm or bigger in described device, can be observed the even fluorescent image corresponding to the film metal electrode shape this moment.This explanation is from amorphous SiO _XElectrons emitted is uniformly in the layer, and has high linear moving, and illustrates that these devices can be used as emission millimeter or the electromagnetic electronics emitting diode of submillimeter wavelength or light-emitting diode or laser diode, also can be used as high-speed switching arrangement.

Can observe in above-mentioned deposition process SiO by scanning electron microscopy (SEM) by the sputter gained _XThe microstructure that is made of the particle surface with about 20nm diameter is found on the surface of insulating barrier.SiO by insulating barrier _XAs if the microstructure that grain structure constitutes produces special phenomenon, is to pass through electric current 50nm or the bigger insulating barrier from thickness promptly.Though SiO _XBe insulator in itself, but when in its contiguous place's defectiveness or the forbidden band impurity being arranged, can produce a plurality of bands with low potential at insulating barrier.Suppose that electronics passes through one by one from a plurality of bands with low potential, consequently from 50nm or thicker insulating barrier, pass through then.

Fig. 6 shows the electron emission display of an embodiment according to the present invention.This embodiment comprises a pair of transparent substrates 1 and device substrate 10, and they face and form a vacuum space 4 mutually between them.Shown in electron emission display in, the a plurality of transparent collectors 2 of parallel formation on the inner surface of clear glass substrate 1 or display surface (it is in the face of bottom substrate 10), this collector electrode is for example made by tin indium oxide (so-called ITO), tin oxide (SnO), zinc oxide (ZnO) etc.Collector electrode 2 can wholely form.The transparent collector of catching the electronics of launching divides three groups to be provided with, and corresponding to red (R), green (G) and orchid (B) signal, so that colored show grid to be provided, and applies voltage respectively on these three collector electrodes.Therefore, be respectively formed on three collector electrodes 2 corresponding to fluorescence coating 3R, 3G and the 3B of the fluorescent material of R, G and B color emission, its mode is in the face of vacuum space 4.

Via additional insulating barrier 18, a plurality of ohmic properties electrodes 11 of parallel formation on the inner surface of glass device substrate 10 grades, described inner surface form vacuum space (being that described inner surface is towards clear glass substrate 1) towards clear glass substrate and between them.Supplemental dielectric layer 18 is by as SiO ₂, SiN _X, Al ₂O ₃Or the insulator of AlN etc. forms, and can be used for anti-10 pairs of devices of locking apparatus substrate have a negative impact (as the wash-out of impurity, as basic component or coarse substrate surface).On ohmic properties electrode 11, form a plurality of electron emitting device S.For adjacent films metal electrode 15 is electrically connected mutually, on part film metal electrode 15, form a plurality of bus electrodes 16, they are parallel to each other and extend and perpendicular to ohmic properties electrode 11.Each electron emitting device S comprises power supply sublayer 12, insulating barrier 13 and the film metal electrode 15 made by a-Si: H that is formed in order on the ohmic properties electrode 11.Film metal electrode 15 is towards the vacuum space 4.Formation has second supplemental dielectric layer 17 of perforate, to separate the surface of the film metal electrode 15 in a plurality of electron emission regions.This second supplemental dielectric layer 17 covers bus electrode 16, to prevent unnecessary short circuit.

The material that is used for ohmic properties electrode 11 is Au, Pt, Al, the W etc. that are generally used for the IC line, and these materials have homogeneous thickness to provide substantially the same electric current in each device.

From the principle of electronics emission, the material of film metal electrode 15 preferably has lower work function φ, and thinner.Be to increase electronic transmitting efficiency, the material of film metal electrode 15 should be the metal of I in the periodic table of elements or II group, for example can use the alloy of Mg, Ba, Ca, Cs, Rb, Li, Sr etc. and these elements effectively.For making film metal electrode 15 extremely thin, the material of film metal electrode 15 should be chemically stable and have high conductivity, for example the one matter of Au, Pt, Lu, Ag, Cu or their alloy.With the coating of aforesaid low workfunction metal be entrained on these metals or within also be effective.

The material that is used for bus electrode 16 can be the Au, the Pt that are generally used for the lead of integrated circuit (IC), Al etc., and its thickness should be enough to provide substantially the same electromotive force in each device, for example is 0.1-50 μ m.

Can use single matrix system or active matrix system drive system as display unit of the present invention.

Claims (2)

1, a kind of electron emitting device, it comprises:

The power supply sublayer made from metal or semiconductor;

The insulating barrier that on this power supply sublayer, forms; And

It is that on this insulating barrier, form and towards the film metal electrode of vacuum space,

This device is characterised in that the thickness of described insulating barrier is 50-1000nm, and described power supply sublayer is to be made by the amorphous silicon through hydrogenation, when between power supply sublayer and film metal, applying electric field, and this electron emitting device emitting electrons, and

Described power supply sublayer is formed on the electrode surface of substrate.

2, a kind of electron emission display, it comprises:

A pair of opposed facing first and second substrates form a vacuum space between them;

A plurality of first suprabasil electron emitting devices that are arranged on;

Be arranged on the second suprabasil collector electrode; And

Be formed on the fluorescence coating on this collector electrode,

Each electron emitting device comprises with metal or semiconductor makes and is formed at power supply sublayer on the electrode surface of substrate; The insulating barrier that on this power supply sublayer, forms; And on this insulating barrier, form and towards the film metal electrode of vacuum space, wherein, the thickness of described insulating barrier is 50-1000nm, and described power supply sublayer is to be made by the amorphous silicon through hydrogenation.

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