CN1243995C - 采用多层光波导的基于阵列波导干涉器的光无源器件 - Google Patents

采用多层光波导的基于阵列波导干涉器的光无源器件 Download PDF

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CN1243995C
CN1243995C CN 03118701 CN03118701A CN1243995C CN 1243995 C CN1243995 C CN 1243995C CN 03118701 CN03118701 CN 03118701 CN 03118701 A CN03118701 A CN 03118701A CN 1243995 C CN1243995 C CN 1243995C
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CN1434308A (zh
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李志扬
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Wuhan Yusheng Optical Devices Co., Ltd.
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Abstract

本发明公开了一种采用多层光波导的基于阵列波导干涉器的光无源器件，它包括至少两个光波导层，并把弯曲光波导制作在内芯与包层的折射率相差较大的波导层中，使器件尺寸减小，便于在一块基片上集成许多通道，特别适用于做多通道大规模光通讯无源器件。

Description

采用多层光波导的基于阵列波导干涉器的光无源器件
                      技术领域
本发明涉及一种采用多层光波导的基于阵列波导干涉器的光无源器件，属于集成光学领域，特别适用于做光通讯网络器件。
                      背景技术
阵列波导干涉器(Arrayed waveguide interferometer，AWI)是一种采用多光束干涉原理的新型干涉器，它的核心是一个由多根光波导组成的波导阵列，其中每一根光波导的作用是把一小部分光波从输入光波导耦合出来，并经过一定相移后送入输出光波导，这样许多路光程不同的光束在输出光波导发生干涉，从而实现非常高的波长分辨率。多个AWI可以按一定方式串接起来组成各种光无源器件，如基于阵列波导干涉器的波长解复用/波长复用器(WDMUX/WMUX，Wavelengthdemutipler/wavelength mutiplexer)、基于阵列波导干涉器的波长选择开关(WSS，Wavelength-seleetive switches)、基于阵列波导干涉器的波长选择路由(WSR，wavelength-selective routing)、基于阵列波导干涉器的波长选择耦合器(WSC，Wavelength-selective coupler)、基于阵列波导干涉器的波长分插复用器(WADM，Wavelength add/drop mutiplexer)等，在光通讯技术中有重要应用。AWI一般采用光集成技术制作，为了制作大规模、多通道的基于阵列波导干涉器的光无源器件，需要把许多阵列波导干涉器集成在面积有限的一块基片上，因此单个阵列波导干涉器的尺寸必须很小，这样不可避免地要大量使用曲线形光波导，如圆形、半圆形、S形光波导等。曲线光波导会引起模式损耗，这种损耗的大小与光波导曲率半径及光波导的折射率分布有关。在同样损耗程度下，增大光波导的芯层和包层的折射率差，容许的光波导曲率半径可以减小。但当增大光波导的芯层和包层的折射率差时，由材料吸收引起的损耗往往也跟着增大，如果器件内部光波导的总长度很长，总的光损耗可能会增大。以石英系的平面波导技术来说，对1.55μm信号光，当芯层和包层的折射率差为0.004～0.0045时，材料吸收损耗为0.017dB/cm，在模式损耗不大于0.1dB的条件下，容许最小90度转弯半径为15mm；当芯层和包层的折射率差增为0.0075时，材料吸收损耗增大为0.035dB/cm，在模式损耗不大于0.1dB的条件下，容许最小90度转弯半径减小为5mm。可见采用单层光波导制作基于阵列波导干涉器的无源器件时，如果光波导的芯层和包层的折射率相差很小，就不得不采用较大曲率半径的光波导，这样在一块基片上所能集成的信道数目就受到很大限制。所有基于平面光波导技术的光波导器件都存在同样问题。
                      发明内容
本发明的目的是克服上述采用单层光波导制作无源器件时的不足，提供一种采用多层光波导的基于阵列波导干涉器的光无源器件，实现大规模、多通道光无源器件的集成，解决了在平面光波导器件中采用较小曲率半径的光波导的问题。
为达到上述目的，本发明的技术方案是提供一种采用多层光波导的基于阵列波导干涉器的光无源器件，它包括至少两个光波导层，不同光波导层的光波导的内芯与包层的折射率差可以不同，基于阵列波导干涉器的光无源器件的内部结构分别制作在不同波导层中，两个相邻波导层内的光波导通过方向耦合器相耦合。
所述的采用多层光波导的基于阵列波导干涉器的光无源器件，至少两个光波导层的内芯与包层的折射率差不同，器件内部结构中的弯曲光波导制作在内芯与包层的折射率相差相对较大的波导层中。
所述的采用多层光波导的基于阵列波导干涉器的光无源器件，至少两个光波导层的内芯与包层的折射率差不同，器件内部结构中的单个阵列波导干涉器的耦合阵列波导中的光波导制作在内芯与包层的折射率相差相对较大的波导层中。
本说明书中所用术语说明：(1)、基于阵列波导干涉器的光无源器件：指以阵列波导干涉器为基本单元，把多个阵列波导干涉器通过一定方式串接或堆砌组合起来，实现波分复用/解复用、光开关等功能的光无源器件。(2)、光波导：指由折射率不同的两种或更多种介质按照一定空间分布构成的光通道，如光纤，制作在平面基片上的条形、脊形光波导等。一般它由内芯和包裹在其外的包层组成，内芯的折射率高于包层，这样光被限制沿内芯传播。
本发明的基本原理是：当光信号在曲线型光波导中传播时会引起模式损耗，这种损耗的大小与光波导曲率半径及光波导的折射率分布有关。在光波导的芯层和包层的折射率差一定的情况下，光波导的曲率半径越小，模式损耗越大；在光波导的曲率半径一定的情况下，光波导的芯层和包层的折射率差越大，模式损耗越小。因此如果采用多层光波导技术，把基于阵列波导干涉器的光无源器件的内部结构中的弯曲光波导制作在内芯与包层的折射率相差较大的波导层中，就可减小模式损耗，而其他部分制作在内芯与包层的折射率相差较小的波导层中，避免造成大的材料吸收损耗。同时分布在两个相邻波导层内的光波导通过一定方式，例如通过方向耦合器方式相耦合，可保持基于阵列波导干涉器的光无源器件的完整性，使其原有功能不变。由于单个阵列波导干涉器由输入光波导、输出光波导和耦合波导阵列组成，弯曲光波导主要出现在耦合波导阵列中，因此可以把单个阵列波导干涉器的耦合波导阵列中的所有光波导制作在内芯与包层的折射率相差较大的波导层中。
本发明与现有技术相比具有以下优点和效果：
本发明所涉及的采用多层光波导的基于阵列波导干涉器的光无源器件，由于在内芯与包层的折射率相差较大的波导层中制作弯曲光波导，因此可以采用较小曲率半径，使器件尺寸减小，便于在一块基片上集成许多信道，提高器件的集成度。
                      附图说明
图1为本发明在基于阵列波导干涉器的光无源器件为光开关，且分布制作在两层光波导上的实施例示意图。
                      具体实施方式
图1中基于阵列波导干涉器的光开关的输入光波导5和输出光波导4制作在具有电光效应的基片6上，属于下波导层，而光波导1、2，……，N组成的耦合波导阵列制作在平面介质8中，属于上波导层。上下两层波导由平面介质7隔开，光波导1、2，……，N的两端分别位于输入光波导5和输出光波导4的正上方，并与输入光波导5和输出光波导4以方向耦合器的方式相耦合。光波导1、2，……，N分别从输入光波导5取出一部分光能，再耦合送到输出光波导4，组成一个完整的阵列波导干涉器。当输入光波导5和/或输出光波导4加上适当电压时，由于电光效应，它们的折射率发生变化，从输入光波导5经相邻两根光波导耦合到输出光波导4的光程差发生变化，引起阵列波导干涉器的工作波长的改变，实现对某一波长光波的开与关。由于上波导层中光波导1、2，……，N的内芯与外包层的折射率差做得较大，大于下波导层中内芯与外包层的折射率差，因此半圆形光波导1、2，……，N的曲率半径可以做得较小，这样单个光开关的整体尺寸较小，在一块基片上就可以集成很大数目的光开关。

Claims (3)

1.一种采用多层光波导的基于阵列波导干涉器的光无源器件，其特征在于，它包括至少两个光波导层，基于阵列波导干涉器的光无源器件的内部结构分别制作在不同波导层中，两个相邻波导层内的光波导通过方向耦合器相耦合。
2.根据权利要求1所述的采用多层光波导的基于阵列波导干涉器的光无源器件，其特征在于，至少两个光波导层的内芯与包层的折射率差不同，器件内部结构中的弯曲光波导制作在内芯与包层的折射率相差相对较大的波导层中。
3.根据权利要求1所述的采用多层光波导的基于阵列波导干涉器的光无源器件，其特征在于，至少两个光波导层的内芯与包层的折射率差不同，器件内部结构中的单个阵列波导干涉器的耦合阵列波导中的光波导制作在内芯与包层的折射率相差相对较大的波导层中。
CN 03118701 2003-02-26 2003-02-26 采用多层光波导的基于阵列波导干涉器的光无源器件 Expired - Fee Related CN1243995C (zh)

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