CN1243397C - Multiple wavelength crystal laser of binary lens structure - Google Patents
Multiple wavelength crystal laser of binary lens structure Download PDFInfo
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- CN1243397C CN1243397C CN 01122543 CN01122543A CN1243397C CN 1243397 C CN1243397 C CN 1243397C CN 01122543 CN01122543 CN 01122543 CN 01122543 A CN01122543 A CN 01122543A CN 1243397 C CN1243397 C CN 1243397C
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Abstract
The present invention relates to a multiple wavelength crystal laser with a binary mirror structure, which is characterized in that one laser crystal in Nd: YAG, Nd: YVO4, Nd: YAP, Nd: YLF and Nd: BEL is used as a laser active medium; under the condition that a lamp (krypton lamp or xenon lamp) is used as a pumping source or a semiconductor laser is used as a pumping source, laser oscillation of two fundamental waves of the wave band of 1.0 mum and the wave band of 1.3 mum is simultaneously output in one laser crystal rod in a continuous operation mode, a pulse operation mode and a Q modulating mode. A binary mirror structure is adopted by the resonant cavity mirror of the laser of the present invention; one reflecting mirror or output coupling mirror surface is divided into two halves to be respectively coated with medium films which are distributed according to different transparency and reflectivity; because each fundamental wave oscillates in a region which is composed of one half of the binary mirror, a cavity mirror at the other end of the resonant cavity, and a corresponding laser crystal which is clamped between the two cavity mirrors, consumed particles rotate reversely on the geometric region according to respective wavelengths without mutual interference. The requirement of the laser of the present invention for film coating precision of an output cavity is greatly reduced, and thus, the present invention is easy to produce in a batch mode.
Description
Technical field
The multi-wavelength crystal laser of two minutes of the present invention mirror structures belongs to optoelectronic areas.It can export the optical maser wavelength of multiple first-harmonic and the coherent radiation of additive mixing thereof simultaneously at same laser crystal, can be applicable to many aspects such as laser medicine, laser processing, laser communications, astronomy.
Background technology
There is the people in past the laser of a kind of fundamental wavelength of output and a laser of non-linear frequency doubled light thereof, is called dual laser.And usually the multiple-wavelength laser that refers to of people should be the laser of at least two kinds of fundamental wavelengths of can vibrating simultaneously in same laser crystal, also can contain the additive mixing coherent radiation of fundamental wave simultaneously.
Because trivalent neodymium ion (Nd
3+) there are two main wave bands in laser crystal, promptly by
4F
3/2-
4I
11/2The 1.0 mu m waveband fundamental wave of lasers that the transition of energy level produces and by
4F
3/2→
4I
13/2The 1.3 mu m waveband fundamental wave of lasers that energy level produces (to the Nd:YAG crystal, are the laser of 1064nm and 1319nm or 1338nm; To Nd:YVO
4Crystal is the laser of 1064nm and 1342nm; To the Nd:YAP crystal, be the laser of 1079.5nm and 1341.4nm; To the Nd:YLF crystal, be the laser of 1047nm and 1313nm; To the Nd:BEL crystal, laser for 1064nm and 1351nm), and the transition cross section σ of two kinds of wavelength lasers differs bigger, and different laser crystals is the ratio of two kinds of wave band transition cross sections different (seeing attached list), allow the first-harmonic of two kinds of wave bands vibrate simultaneously and just require to adopt relevant monotechnics.Shen Hongyuan had once set up first in the world Dual Wavelength Crystal Lasers (Shen Hongyuan etc., " the Comparison of simultaneous multiple wavelength lasing invarious neodymium host crystals at transitions from of running continuously
4F
3/2To
4I
11/2And
4I
13/2", Applied physics letters, (1990), 56 (20), 1937), be implemented in and export 33.7W 1.0795 μ m laser and 30W 1.3414 μ m laser on the Nd:YAP crystal simultaneously.In the past, measured Nd
3+Ion is in the YAP crystal
4F
3/2-
4I
13/2Transition cross section σ (Shen Hongyuan etc., " Measurement of theStimulated Emmission Cross section for
4F
3/2-
4I
13/2Transition of Nd
3+In YAlO
3Crystal ", IEEEJ.Quantum Electron., 1989, Vol.25, NO.2,144), it is more than 2.4 times of crystal transition cross section such as Nd:YAG, Nd:YLF and Nd:BEL, it is easy to realize continuous dual wavelength running.We also obtained the dual wavelength long pulse running simultaneously of macro-energy laser (Lin Wenxiong, Shen Hongyuan etc., " experimental study of double-wavelength pulse Nd:YAG laser ", Chinese laser, 1994, Vol.A.21, No.289); Carried out the development of acousto-optic Q modulation dual wavelength
Subordinate list: the basic parameter of some neodymium-doped laser crystals
| Crystal | Nd:YAG | Nd:YLF | Nd:BEL | Nd:YAlO 3 | Nd:YVO 4 |
| Fluorescence lifetime τ (μ s) | 230 | 480 | 144 | 150 | 99 |
| 4F 3/2- 4I 13/2Wavelength (nm) | 1338/1318 | 1313 | 1351 | 1341.4 | 1342 |
| σ 1(×10 -19cm 2) | 0.9/0.92 | 0.6 | 0.4 | 2.2 | 6.0 |
| σ 1·τ(×10 -19cm 2·μs) | 207/211.6 | 288 | 57.6 | 330 | 594 |
| 4F 3/2- 4I 11/2Wavelength (nm) | 1064 | 1047 | 1070 | 1079.5 | 1064 |
| σ 2(×10 -19cm 2) | 4.6 | 3.2/2.6 | 2.1 | 4.6 | 18.6 |
(woods literary composition realgar sees big vast Shen Hong unit, " a kind of multiple-wavelength laser of acousto-optic Q modulation ", Chinese patent application number 01119589.4); And the output of the additive mixing under long pulse (Lin Wenxiong, Shen Hongyuan etc., et.al., Tripling the harmonic generation of a 1341.4nm Nd:YAP laser in LiIO
3And KTP crystals to get 447.1nm blue coherent radiation.OpticsCommunications, 1991,82 (3-4): 333-336; Shen Hongyuan, Lin Wenxiong etc., " Secondharmonic generation and sum frequency mixing of dual wavelength Nd:YAlO
3Laser to 413.7nm violet coherent radiation in LiIO
3Crystal ", Journal of AppliedPhysics (1992), 72 (9) 4472.).In addition, the work of exporting several fundamental wavelengths simultaneously at same laser crystal has also been carried out some in the world: United States Patent (USP) " Dual Wavelength Solid Statelaser " 5,708,672; And document Chen Y F; CW dual-wavelength operation of adiode-end-pumped Nd:YVO
4Laser, APPLIED PHYSICS B-LASERS ANDOPTICS, (2000) Vol.70, NO.4,475. are reported.
The difficult point that realizes the running of Nd-doped crystal dual-wavelength laser is that the transition cross section of 1.3 mu m wavebands in different laser crystals is littler more than at least one times than 1.0 mu m wavebands, and to allow the laser starting of oscillation simultaneously of two wave bands, just need strengthen cavity loss by traditional method to 1.0 mu m waveband fundamental waves, can not starting of oscillation but this method is possible when running continuously because 1.0 mu m waveband cavity losses are excessive; If operate in pulse condition, particularly transferring the Q state, two wave band of laser pulses bad result of plyability in time will appear, i.e. dislocation on the life period between two peak value of pulses, cause the time integral characteristic of two pulse power phase products bad, this means that the dual-wavelength laser that is integrated into direct ratio of product is non-linear very low with energy output frequently therewith.And by conventional method, extremely harsh to the plated film required precision of chamber mirror, the chamber mirror of 1.3 mu m wavebands and 1.0 mu m wavebands departs from the district that is complementary a little, just possibly can't realize that dual wavelength turns round simultaneously.
Summary of the invention
The objective of the invention is to disclose and a kind ofly can make several Nd ion doped laser crystals, the method that makes 1.0 mu m wavebands and 1.3 mu m waveband lasers be easy to vibrate simultaneously in single rod makes a laser export multi-wavelength's effect simultaneously.
Realize that technical scheme of the present invention can be illustrated by accompanying drawing:
Is under the pumping source at lamp (krypton lamp or xenon lamp) for pumping source or with the semiconductor laser, under continuous, pulse, acousto-optic or electric-optically Q-switched working method, adopts Nd:YAG, Nd:YVO
4, a kind of laser crystal among Nd:YAP, Nd:YLF, the Nd:BEL is that laser-activated medium produces the population inversion energy storage.Speculum in the resonator mirror of the multiple-wavelength laser of two fens mirror structures has following structure (see figure 1): will be divided into two halves with a slice mirror surface, plate the deielectric-coating that different reflectivity distributes separately, half is for to have higher transmittance to 1.0 mu m waveband total reflections, 1.3 mu m wavebands, second half 1.3 mu m waveband total reflection, 1.0 mu m wavebands have higher transmittance, and outgoing mirror is coated with 1.0 mu m wavebands, 1.3 mu m wavebands due best output degree of coupling parameter when its single wavelength turns round.
In addition, the multiple-wavelength laser of two fens mirror structures also can adopt following structure (see figure 2): be divided into two halves plating with a slice output coupling mirror face, plate the deielectric-coating that different reflectivity distributes separately, half is for to have certain output degree of coupling, 1.3 mu m wavebands that high transmitance is arranged to 1.0 mu m wavebands, second half is for to have certain output degree of coupling, 1.0 mu m wavebands that high transmitance is arranged to 1.3 mu m wavebands, and total reflective mirror is coated with the deielectric-coating to 1.3 mu m wavebands, 1.0 mu m wavebands.
By adopting above one of them structure, realize the vibration of multi-wavelength in same laser crystal bar easily.Mirror was divided into two halves in two minutes, and helped the dielectric coating series that a kind of fundamental oscillation is unfavorable for the exclusiveness of another kind of fundamental oscillation on being coated with separately in these two halves.Because of every kind of first-harmonic in its two fens mirrors half, vibrate in the zone of the folded corresponding laser crystal of the chamber mirror of the resonant cavity other end and this two chambeies mirror, the counter-rotating particle that is consumed belongs to wavelength separately on geometric areas, do not disturb mutually.Every kind of first-harmonic need not be taken into account between the multi-wavelength because of the different difficult problem of difference competitiveness on the transition cross section too much in this structure.And, adopt above structure, can be easily in the chamber, insert nonlinear crystal and carry out mixing in intracavity frequency doubling, the chamber and overcome in traditional Dual Wavelength Crystal Lasers because of introducing new loss and then destroy coupling balance between the dual wavelength competitiveness immediately.In addition, adopt above structure, the degree of coupling of each its outgoing mirror of first-harmonic can design according to every kind of first-harmonic best operating condition separately, has avoided considering two first-harmonic competitiveness matching problems because of need in the conventional method and has departed from the optimum working parameter of first-harmonic separately.
More than the variant (see figure 3) of two kinds of schemes: in the resonant cavity of the multiple-wavelength laser of two fens mirror structures, total reflective mirror is coated with the deielectric-coating to 1.3 mu m wavebands, 1.0 mu m wavebands; Outgoing mirror is coated with 1.0 mu m wavebands, 1.3 mu m wavebands due best output degree of coupling parameter when its single separately wavelength turns round; Simultaneously vertical laser transmission direction is inserted the optical element of high saturating, the high loss of 1.0 mu m wavebands of one 1.3 mu m waveband in the chamber, and this element inserts the laser beam cross-section degree of depth of being blocked to be needed by the proportioning of energy between 1.3 mu m wavebands, 1.0 mu m wavebands and determine.Because the element that inserts can suppress 1.0 mu m wavebands effectively, help the vibration of 1.3 mu m wavebands, it is the laser generation of 1.3 mu m wavebands in laser beam cross-section institute shield portions, and the part zone in the corresponding laser crystal only provides the inverted population energy storage for the laser of 1.3 mu m wavebands; Another part non-occluded area is because 1.0 mu m wavebands have bigger competitiveness than 1.3 mu m waveband lasers, so be easy to make the laser generation running of 1.0 mu m wavebands.
By the multiple-wavelength laser of above scheme, also can add the nonlinear optics frequency-changer crystal and be used for the nonlinear optics frequency inverted.
The present invention compares the useful effect that is had with background technology: the existing correlative study of crystal and double-wavelength laser and report all need 1.0 mu m waveband fundamental waves are strengthened cavity loss, but this method might be when running continuously because 1.0 mu m waveband cavity losses are excessive can not starting of oscillation; If operate in pulse condition, particularly transferring the Q state, two wave band of laser pulses bad result of plyability in time will appear, i.e. dislocation on life period between two peak value of pulses, cause the time integral characteristic of two pulse power phase products bad, this means that the dual-wavelength laser that is integrated into direct ratio of product is non-linear very low with energy output frequently therewith.And by conventional method, extremely harsh to the plated film required precision of chamber mirror, the chamber mirror of 1.3um wave band and 1.0um wave band departs from the district that is complementary a little, just possibly can't realize that dual wavelength turns round simultaneously.
And the employing the solution of the present invention because two fens mirror structures that adopt, is that the method for geometry by chamber mirror structure is divided into the laser operation zone of two wavelength artificially with laser crystal, and the counter-rotating particle that is consumed belongs to wavelength separately on geometric areas, do not disturb mutually.Every kind of first-harmonic need not be taken into account in this structure between the multi-wavelength too much because of the different difficult problem of difference competitiveness on the transition cross section.And this laser reduces greatly to the requirement of output cavity mirror plated film precision, very easily produces in batches.Can be in the process of laser operation according to user's actual demand by controlling two fens mirrors distribute the energy between 1.3 mu m wavebands, 1.0 mu m wavebands easily in the position of laser cross section proportioning.
Description of drawings
Now accompanying drawing is done the drawing explanation:
Fig. 1. total reflective mirror is the multi-wavelength crystal laser of two fens mirrors.Wherein 1) be the total reflective mirror of two fens mirrors, 2) be laser bar, 3) be output coupling mirror.
Fig. 2. output coupling mirror is the multi-wavelength crystal laser of two fens mirrors.Wherein 1) be the total reflective mirror of two fens mirrors, 2) be laser bar, 3) be output coupling mirror.
Fig. 3. insert the multi-wavelength crystal laser of 1.0 mu m waveband losses, high saturating this optical element of 1.3 mu m wavebands in the chamber.Wherein 1) be the total reflective mirror of two fens mirrors, 2) be laser bar, 3) be output coupling mirror.4) be to 1.0 mu m waveband losses, the high saturating dielectric mirror of 1.3 mu m wavebands.
Fig. 4 is that lamp pumping Nd:YAP of the present invention, total reflective mirror are the pie graph of the multi-wavelength crystal laser example of two fens mirrors.
Fig. 5 is that the laser diode side pumped Nd:YAP of the present invention, output coupling mirror are the pie graph of the multi-wavelength crystal laser example of two fens mirrors.
Fig. 6 is the pie graph that inserts the multi-wavelength crystal laser example of 1.0 mu m waveband losses, high saturating this optical element of 1.3 mu m wavebands in the laser diode side pumped Nd:YAP of the present invention, the chamber.
Embodiment
Further describe the embodiment of this programme below in conjunction with accompanying drawing:
Embodiment one:
Among Fig. 4 1) for being divided into two halves plating with a slice mirror surface, plate the deielectric-coating that different reflectivity distributes separately, half is to 1.0 mu m waveband total reflections, 1.3 mu m waveband has higher transmittance, second half 1.3 mu m waveband total reflection, 1.0 mu m waveband has the dielectric mirror of higher transmittance, 2) be the Nd:YAP crystal, 3) be output coupling mirror, be coated with 1.0 mu m wavebands, 1.3 the deielectric-coating of mu m waveband due best output degree of coupling when its single separately wavelength turns round, 5) hard-pressed bale formula ellipse or round laser pump cavity, be full of the medium cooling fluid in the chamber, cooling work material and pumping lamp, 6) be the optical filtering pipe of elimination pumping lamp ultra-violet radiation, 7) be self-loopa cooling device, 8) be pumping with krypton lamp or xenon lamp, 9) be power supply, can be output current increases continuously 30 amperes uninterruptable power from 0, or the output average current is increased to 30 amperes the suitable repetition rate power supply of pulse duration from 0, perhaps exports the pulse power of energy adjustable.
During work, if insert the nonlinear optics frequency-changer crystal in the chamber or outside the chamber, and the degree of coupling of corresponding adjustment resonator mirror, can obtain the coherent radiation output of higher conversion efficiency easily.
Embodiment two:
Among Fig. 5 1) to the total reflective mirror of 1.0 mu m wavebands, 1.3 mu m wavebands, 2) be the Nd:YAG crystal, with a plurality of LD (10) side-pumping, with the pump light vertical direction on heat sink (not the drawing among the figure) of semiconductor cooler refrigeration, extract the heat that the operation material operation process produces; 3) be the output coupling mirror of two fens mirror structures of laser, it is divided into two halves plating with a slice output coupling mirror face, plate the deielectric-coating that different reflectivity distributes separately, half is for to have certain output degree of coupling, 1.3 mu m wavebands that high transmitance is arranged to 1.0 mu m wavebands, and second half is for to have certain output degree of coupling, 1.0 mu m wavebands that high transmitance is arranged to 1.3 mu m wavebands; 11) be the drive source of LD semiconductor laser.During work, if insert the nonlinear optics frequency-changer crystal in the chamber or outside the chamber, and the degree of coupling of corresponding adjustment resonator mirror, can obtain the coherent radiation output of higher conversion efficiency easily.
Embodiment three:
Among Fig. 6 1) to the total reflective mirror of 1.0 mu m wavebands, 1.3 mu m wavebands, 2) be the Nd:YAG crystal, with a plurality of LD (10) side-pumping, with the pump light vertical direction on heat sink (not the drawing among the figure) of semiconductor cooler refrigeration, extract the heat that the operation material operation process produces; 3) be the laser output coupling mirror, to 1.0 mu m wavebands certain output transmitance 13% is arranged, to the transmitance 3% of 1.3 mu m wavebands; 4) be to 1.0 mu m waveband losses, the high saturating dielectric mirror of 1.3 mu m wavebands; 11) be the drive source of LD semiconductor laser.During work, if insert the nonlinear optics frequency-changer crystal in the chamber or outside the chamber, and the degree of coupling of corresponding adjustment resonator mirror, can obtain the coherent radiation output of higher conversion efficiency easily.
Claims (3)
1. the multi-wavelength crystal laser of two fens mirror structures is with Nd:YAG, Nd:YVO
4, a kind of laser crystal among Nd:YAP, Nd:YLF, the Nd:BEL is laser-activated medium, be pumping source or be under the pumping source at krypton lamp or xenon lamp with the semiconductor laser, under continuous, pulse, acousto-optic or electric-optically Q-switched working method, in a laser crystal bar, export the laser generation of 1.0 mu m wavebands and two kinds of first-harmonics of 1.3 mu m wavebands simultaneously: to the Nd:YAG crystal, the dual-wavelength laser of vibration 1064nm, 1319nm or 1338nm; To the Nd:YVO4 crystal, the dual-wavelength laser of vibrate simultaneously 1064nm, 1342nm; To the Nd:YAP crystal, the dual-wavelength laser of vibrate simultaneously 1079.5nm, 1341.4nm; To the Nd:YLF crystal, the dual-wavelength laser of vibrate simultaneously 1047nm, 1313nm; To the Nd:BEL crystal, the dual-wavelength laser of 1064nm, 1351nm simultaneously vibrates, one or both first-harmonics in this device output dual wavelength, or output is through the coherent radiation of the generation of the nonlinear optics frequency-changer crystal outside in the placed cavity or the chamber, it is characterized in that: the speculum in the resonator mirror of the multiple-wavelength laser of described two minutes mirror structures has following structure: be divided into two halves with a slice mirror surface, plate the deielectric-coating that different reflectivity distributes separately, half is for to have higher transmittance to 1.0 mu m waveband total reflections, 1.3 mu m wavebands; Second half has higher transmittance to 1.3 mu m waveband total reflections, 1.0 mu m wavebands; Outgoing mirror is coated with the deielectric-coating to 1.0 mu m wavebands, 1.3 mu m wavebands due best output degree of coupling when its single separately wavelength turns round.
2. the multi-wavelength crystal laser of two minutes as claimed in claim 1 mirror structures, it is characterized in that: the output coupling mirror in the resonator mirror of the multi-wavelength crystal laser of described two minutes mirror structures has following structure: be divided into two halves with a slice output coupling mirror face, plate the deielectric-coating that different reflectivity distributes separately, half is for to have certain output degree of coupling, 1.3 mu m wavebands that high transmitance is arranged to 1.0 mu m wavebands; Second half is for to have certain output degree of coupling, 1.0 mu m wavebands that high transmitance is arranged to 1.3 mu m wavebands.
3. the multi-wavelength crystal laser of two minutes as claimed in claim 1 mirror structures is characterized in that: in the resonant cavity of the multi-wavelength crystal laser of described two minutes mirror structures, total reflective mirror is coated with the deielectric-coating to 1.3 mu m wavebands, 1.0 mu m wavebands; Outgoing mirror is coated with the deielectric-coating to 1.0 mu m wavebands, 1.3 mu m wavebands due best output degree of coupling when its single separately wavelength turns round; Simultaneously the direction of vertical laser transmission is inserted the dielectric mirror of high saturating, the high loss of 1.0 mu m wavebands of one 1.3 mu m waveband in the chamber, and the degree of depth that this element inserts shared laser beam cross-section is needed by the proportioning of giving energy between 1.3 mu m wavebands, 1.0 mu m wavebands and determines.
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|---|---|---|---|
| CN 01122543 CN1243397C (en) | 2001-07-01 | 2001-07-01 | Multiple wavelength crystal laser of binary lens structure |
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|---|---|---|---|
| CN 01122543 CN1243397C (en) | 2001-07-01 | 2001-07-01 | Multiple wavelength crystal laser of binary lens structure |
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| CN1243397C true CN1243397C (en) | 2006-02-22 |
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| CN105098584B (en) * | 2015-09-29 | 2018-03-27 | 哈尔滨工业大学 | A kind of device and method that the output of multiple beam pulse laser is realized using laser output mirror film layer control technology |
| CN106877128A (en) * | 2017-04-19 | 2017-06-20 | 江苏师范大学 | A kind of wavelength tunable solid laser being easily integrated |
| CN112928588B (en) * | 2021-01-25 | 2022-11-08 | 中国科学院上海光学精密机械研究所 | Multi-wavelength laser |
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