CN1242273C - Method and device for detecting semiconductor circuit - Google Patents
Method and device for detecting semiconductor circuit Download PDFInfo
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- CN1242273C CN1242273C CN 02140112 CN02140112A CN1242273C CN 1242273 C CN1242273 C CN 1242273C CN 02140112 CN02140112 CN 02140112 CN 02140112 A CN02140112 A CN 02140112A CN 1242273 C CN1242273 C CN 1242273C
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Abstract
The present invention is a method and apparatus employing image processing of photographic data by a thermographic camera to determine the heat development of individual semiconductor devices. Therefore, defects of individual devices such as disconnection due to breaks and abnormal heat development due to electrostatic breakdowns can be determined reliably.
Description
Technical field
The present invention relates to method and pick-up unit thereof that a kind of detection contains the semiconductor circuit of a plurality of semiconductor devices.
Background technology
Be equipped with in the various semiconductor devices processes that circuit board constituted of a plurality of semiconductor devices on it making by a plurality of, after being assembled on the circuit board, before being transported to or change over to next technology, it to detect the performance of described semiconductor circuit board (workpiece) earlier to semiconductor devices.In the operation of carrying out Performance Detection, in general, be to check the quality of workpiece (zero defect is arranged), and whether each semiconductor devices worked all test by described semiconductor devices being applied working current.
Aforesaid method of testing and device can not provide complete test for each semiconductor devices in the entire circuit in all scenario.For example: in the semiconductor circuit that contains a plurality of semiconductor devices parallel with one another, if owing to open circuit does not connect a semiconductor devices, electric current will flow on other device, detect thereby will detect this workpiece non-fault.
Owing to known this defective in the test process, proposed to detect the existence that is disconnected device by the big electric current that surpasses common limit value is flow through.But, if being imported this workpiece, tests in so big electric current, when having defective device, other proper device also may all be damaged.This not only wastes workpiece and has also reduced throughput rate, thereby has increased every cost.Therefore, do not carry out hundred-percent detection and carry out a collection of middle sampling Detection that detects.Obviously, this will make testing result reliable inadequately.
In this case, become bad, can not determine which device has fault even can determine the serviceability of whole work-piece.On the other hand, if all devices are detected separately, then needs had the pick-up unit of a plurality of accurate probes.In this case, above-mentioned detection device will be very complicated and very expensive.And if apply identical load voltage and electric current to each workpiece during as actual the use, then such electric supply installation and load equipment can be very expensive.
In addition, if very little electrostatic breakdown only appears in one of them device, will make that electric current flows through, this will pass through traditional detection method.Occurring under the situation of this electrostatic breakdown, above-mentioned device is also worked at first, but along with its use will aggravate the breaking-up of this defective device, makes entire circuit can not work and reduce the life-span of this circuit.
Summary of the invention
Based on this, one object of the present invention is: a kind of detection method and pick-up unit that is used to detect semiconductor circuit is provided, even a plurality of semiconductor devices wherein are parallel with one another, it also can determine the performance (zero defect is arranged) of each device in the circuit reliably.
The present invention is used to embody a kind of method that is used to detect the semiconductor circuit that contains a plurality of interconnective semiconductor devices.This method may further comprise the steps: apply electric loading for described circuit; With thermograph camera circuit diagram, to detect the heat that each semiconductor devices produces corresponding to institute's loading; With the quality of determining circuit and each semiconductor devices based on the heat that is produced; Wherein detect the temperature at least twice of described semiconductor devices in different time points, to record the heat generation characteristic of each semiconductor devices, and if determine that based on the heat generation characteristic of gained the quality of described circuit and semiconductor devices and described circuit and semiconductor devices are determined out of order failure cause.
In a preferred embodiment, in the temperature of different above-mentioned each devices of point in time measurement, and determine the quality (zero defect is arranged) of this device based on measured temperature difference.
Another feature instantiation of the present invention in a kind of to pick-up unit by the workpiece that semiconductor circuit constituted that contains a plurality of continuous semiconductor devices.Described pick-up unit comprises a device fuselage, is provided with on it detected workpiece.Also be provided with one and be used for providing the load circuit of load to workpiece, and be provided with one and provide the voltage source of working current to workpiece by described load circuit according to operating position.One drives wave generation circuit provides drive signal for this workpiece.One thermograph camera places the workpiece picture on this device fuselage, and receives signal from this thermograph camera with an image processor.At last, control this pick-up unit to carry out trace routine with a controller.This pick-up unit detects the temperature at least twice of described semiconductor devices in different time points, to record the heat generation characteristic of each semiconductor devices, and if determine that based on the heat generation characteristic of gained the quality of described circuit and semiconductor devices and described circuit and semiconductor devices are determined out of order failure cause.
Description of drawings
Fig. 1 is the synoptic diagram of semiconductor circuit pick-up unit of the present invention, can carry out detecting operation according to pick-up unit of the present invention;
Fig. 2 is the process flow diagram that adopts the detection method of pick-up unit shown in Figure 1, and it can realize embodying method of the present invention;
Fig. 3 implements timetable of the present invention according to process flow diagram shown in Figure 2;
Fig. 4 is similar to Fig. 3 part, but the result who is according to another embodiment of the present invention to be obtained of its signal;
Fig. 5 is the top view of the aluminium base that adopted in the detected circuit among the present invention;
Fig. 6 is similar to Fig. 5 part, but it is the top view that is installed on chip on the aluminium base and other devices;
Fig. 7 is the side elevation view of structure shown in Figure 6;
Fig. 8 is the top plan view of motor control unit used in the electric motor car that detected circuit is used in the present invention;
Fig. 9 is the side elevation view of described motor control unit;
Figure 10 is the end face elevation view of described motor control unit;
Figure 11 is the top view similar to Fig. 8 part; But wherein removed sealed compound and with the wherein contained parts of solid line signal;
Figure 12 is the side elevation view similar to Fig. 9 part, but has wherein removed sealed compound and with the wherein contained parts of solid line signal;
Figure 13 is the end face elevation view similar to Figure 10 part, but has wherein removed sealed compound and with the wherein contained parts of solid line signal.
Embodiment
Describe each accompanying drawing now in detail, at first referring to Fig. 1, it is according to one embodiment of present invention and the block scheme of the semiconductor circuit pick-up unit of structure and operation that described pick-up unit is generally represented with Reference numeral 21.Be called workpiece printed circuit board (PCB) will as a special case in the back in conjunction with the accompanying drawings 5-13 be described, represent with Reference numeral 22 usually.Workpiece 21 is placed in the pick-up unit fuselage (not shown) of suitable type.
Described power supply 23 links to each other with control device 25.Described control device 25 is controlled the ON/OFF of workpiece by control power supply 23.Control device 25 links to each other with workpiece 22 via driving wave generation circuit 26.Described driving wave generation circuit 26 produces drive signals, opening detected semiconductor devices, and this signal is imposed on a plurality of FET of workpiece 22.
Above the workpiece 22 that places on the said apparatus fuselage, be provided for taking the thermograph camera of the picture of workpiece 22.Described thermograph camera 27 is taken the image of workpiece 22, and thermographic image data is passed to image processor 28.Described image processor 28 is handled described thermographic image data, and carries out temperature computation etc. according to program in the control device 25 or input signal.Institute's result calculated is shown on the monitor 29.
Describe preferred implementation method of the present invention below in conjunction with accompanying drawing 2, Fig. 2 is the process flow diagram that utilizes the semiconductor circuit detection method of pick-up unit shown in Figure 1.Simultaneously with reference to time and thermometer shown in Figure 3.Program is begun by step S1, and usefulness manually or by the input command of outputs from control device 25 such as GPIB order wire is opened workpiece control power supply 23 (Fig. 1) in this step.This moment or slightly before this, take the image of each device (diode 33 or FET34 among Fig. 5-7) of workpiece 22 with thermograph camera 27, and these thermographic image data are sent to image processor 28.
Then, in step S2, be made as ON from the drive signal that is used to open semiconductor devices (FET) that drives wave generation circuit 26 outputs.The operation of step S2 can be carried out simultaneously with step S1.After execution in step S1 and S2, a plurality of FET34 of workpiece 22 start working, and its temperature will increase.The execution time of step S1 and S2 is the t0 in the timetable shown in Figure 3.
After this, in the performed step S3 of time t1, detect the temperature T 1 of each FET34 of workpiece 22 with image processor 28.Then, determine that in step S4 temperature T 1 is whether in predetermined allowed band (in the temperature range in normal running).If, then will be in step S5 when time t2 from thermographic image data detected temperatures T2.
Determine that in step S6 temperature T 2 is whether in predetermined allowed band (in the temperature range in normal running).If temperature T 2 is normal among the step S7, when time t3, be switched off so by driving the drive signal that wave generation circuit 26 imposes on workpiece 22.In step S8 step S7 after or shown in Figure 3 same time, turn off power supply 23 thereafter.Thereby, has finished and detected required electric current and provide, and the temperature of device begins to descend as shown in Figure 3.
In step S9, from step S3, measured temperature data T1 among the S5 calculates temperature difference OLE-LINK (Δ T=T1-T2) among the T2.Calculate the intensification of each FET34 from t1 to t2 thus.Whether the temperature rise value Δ T that is calculated in the determining step 9 in step S10 then, is within the limit of temperature rise at conventional equipment.
The result that the quality (zero defect is arranged) of determining each device 34 with the aforesaid temperature difference is drawn, with only compare from T1 or the determined result of T2, just can produce characteristic and the quality (zero defect is arranged) of definite each device based on the heat of device itself, and can not be subjected to that each device special nature distributes or production line between all devices or the influence that distributes of the characteristic of each between-lot, also can not be subjected to the influence of the temperature or the environment temperature at the initial stage of detection of this device or device, therefore strengthen the reliability that detects.
In addition, even T1 and T2 are respectively normal in step S4 and S6, temperature approach Δ T also may exceed based on step S4, the normal range of T1 among the S6 and T2 critical field, so preferably at step S4, on the S6 basis again execution in step S10 to determine T1, T2.
After this, if the Δ T value among the step S11 is normal, then, show that the testing result of workpiece is normal showing the OK signal on the monitor screen with on other pilot lamp.
As mentioned above, if temperature T 1 or T2 among step S4 or the S5 exceed normal range, then program will change step S12 over to, and drive wave generation circuit 26 and be switched off this moment.Behind the step S12 or simultaneously, power supply 23 is switched off among the step S13.Owing to do not find that device is unusual, so the purpose of this step is detection of end.
If at step S4, determine among S6 and the S10 that workpiece is unusual, then on monitor screen or other pilot lamp, show to show that device has fault among the step S14 by the NG signal.
Fig. 4 is the synoptic diagram of another embodiment of the present invention, has wherein adopted the out of order method of another kind of definite device.Said method is based on such fact, promptly when in a certain device during input current this device can occurrence temperature change naturally.And, make resistance value increase owing to the weld defects of device or at weld generation rosin joint, thereby make temperature change that this also is known.
Therefore, according to said method, after detecting electric current input workpiece, determine the temperature variation of each device by the temperature that detects three time points at least.Known temperature figure when producing electrostatic breakdown or producing rosin joint compares the temperature variation of each device, comes detection means that non-fault is arranged and produces the reason of fault.
For example, as shown in Figure 4, for normal device, the device of a weld generation rosin joint, when applying drive signal, with occur one more significant, to the intensification trend of the temperature profile of upper process.So,, and can determine device because of fault that rosin joint causes if more than twice, can obtain a common temperature variation in different time point detected temperatures.
Has the device that causes unusual VGS-IV characteristic because of electrostatic breakdown for one, because known its common temperature variation, if so twice of the temperature of different time point detection means with on record its temperature variation, then can determine to have the device of electrostatic breakdown.
Refer now to Fig. 5-13, it has shown a kind of workpiece of specific type, and this workpiece can detect with the apparatus and method of having described, and has shown an embodiment, and the substrate that wherein has device can be used as the motor control unit of driving motor car.
As shown in Fig. 5-7, device 22 is made of the copper conductive pattern (not shown) that is formed on the aluminium base 31, and has applied one deck solder resist 32 on this conductive pattern.By scribing solder resist 32, can form the composition district diode staircase shape pattern 33 and the FET staircase shape pattern 34 of electromotor control circuit.Three positions on aluminium base 31 form the output terminal 35a of this control circuit, 35b and 35c, and each output terminal all has two output stomidiums 36 respectively.Four angles of this aluminium base 31 are provided with the mounting hole 37 that is used for fixing housing, referring to the back in conjunction with Fig. 8-13 description of being carried out.In addition, on substrate, also be provided with a gate resistance 38 that forms this another building block of driving circuit.
Referring now to Fig. 8-13,, these figure have illustrated how to construct and aluminium base 31 cooperative whole motor control units shown in Fig. 5-7, usually represent this motor control unit with Reference numeral 45, it comprises Drive and Control Circuit contained in the housing 46, and this Drive and Control Circuit is made of in conjunction with the described aluminium base 31 of Fig. 4-6 front.
Other devices that constitute Drive and Control Circuit also are installed on aluminium base 31, are for example constituted the dielectric capacitor (Figure 11) of Drive and Control Circuit.And, end web joint 49a, 49b and 49c and aforesaid output terminal 35a, 35b links to each other with 35c.Every signal line of this control circuit is all passed through cable 51 and coupling mechanism 52 and is linked to each other with other drivings or control assembly on switch and the locomotive side.Output terminal 53 stretches out from aluminium base 31 bottom surfaces via aforesaid output stomidium 37.Described aluminium base 31 and the electricity component that is mounted thereon all place in the housing 46, and encapsulate or sealing with resin 54.
As mentioned above, the imaging process with thermograph camera view data makes that the hot generating process of each semiconductor devices is detected among the present invention.Therefore, the not conducting that for example causes because of opening circuit of the fault of each device and the unusual thermal process that causes because of electrostatic breakdown are able to reliable detection.Certainly; those skilled in the art can understand easily: the description of front is the preferred embodiment of this method of testing and device, and do not depart from the present invention spirit and by the situation of the protection domain that appended claims limited under can make various modifications and variations to it.
Claims (4)
1, a kind of detection contains the method for the semiconductor circuit of a plurality of continuous semiconductor devices, may further comprise the steps: described circuit is applied electric loading; With the described circuit image of thermograph camera, to detect the thermal process that each semiconductor devices takes place corresponding to institute's loading; With the quality of determining described circuit and each semiconductor devices based on above-mentioned thermal process; Wherein detect the temperature at least twice of described semiconductor devices in different time points, to record the heat generation characteristic of each semiconductor devices, and if determine that based on the heat generation characteristic of gained the quality of described circuit and semiconductor devices and described circuit and semiconductor devices are determined out of order failure cause.
2, a kind of semiconductor circuit detection method as claimed in claim 1, wherein at least some described semiconductor devices parallel connections.
3, a kind of semiconductor circuit detection method as claimed in claim 1 wherein detects the temperature of described semiconductor devices in different time points, and determines the quality of described circuit and each semiconductor devices based on described temperature difference.
4, a kind of device that workpiece is detected, described workpiece is made of the semiconductor circuit that contains a plurality of continuous semiconductor devices, comprises in the described device: a fuselage of placing detected workpiece thereon; One provides the load circuit of load to workpiece according to operating position; A power supply that is used for providing working current to workpiece by described load circuit; A driving wave generation circuit that is used for providing drive signal to described workpiece; One places the thermograph camera that is used to take described workpiece image on the described device fuselage; An image processor that links to each other with described thermograph camera; With a controller that is used to control the trace routine of described pick-up unit; Wherein detect the temperature at least twice of described semiconductor devices in different time points, to record the heat generation characteristic of each semiconductor devices, and if determine that based on the heat generation characteristic of gained the quality of described circuit and semiconductor devices and described circuit and semiconductor devices are determined out of order failure cause.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001161739A JP2002350491A (en) | 2001-05-30 | 2001-05-30 | Inspection method and inspection device for semiconductor circuit |
| JP2001161739 | 2001-05-30 | ||
| US10/063,869 US6809532B2 (en) | 2001-05-30 | 2002-05-21 | Inspection method and inspection apparatus for semiconductor circuit |
| US10/063869 | 2002-05-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1395112A CN1395112A (en) | 2003-02-05 |
| CN1242273C true CN1242273C (en) | 2006-02-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02140112 Expired - Fee Related CN1242273C (en) | 2001-05-30 | 2002-05-28 | Method and device for detecting semiconductor circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1242273C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI721182B (en) * | 2017-04-21 | 2021-03-11 | 鴻海精密工業股份有限公司 | Motherboard analysis device and method |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011254021A (en) * | 2010-06-03 | 2011-12-15 | Sumitomo Electric Ind Ltd | Method of manufacturing semiconductor device |
| US20120158346A1 (en) * | 2010-12-17 | 2012-06-21 | Silicon Image, Inc. | Iddq testing of cmos devices |
| JP5745629B2 (en) * | 2011-07-13 | 2015-07-08 | 浜松ホトニクス株式会社 | Exothermic point detection method and exothermic point detector |
| WO2013031900A1 (en) * | 2011-08-31 | 2013-03-07 | シャープ株式会社 | Wiring fault detection method, wiring fault detection device, and method for manufacturing semiconductor substrate |
| JP5886004B2 (en) * | 2011-11-14 | 2016-03-16 | シャープ株式会社 | Wiring inspection method and wiring inspection apparatus |
| CN103185855B (en) * | 2011-12-27 | 2016-02-10 | 英业达股份有限公司 | Testing equipment |
| JP2013178176A (en) * | 2012-02-28 | 2013-09-09 | Sharp Corp | Defect detection method, defect detection device, and method of manufacturing semiconductor substrate |
| CN104142459B (en) * | 2013-05-09 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor detects circuit and detection method |
-
2002
- 2002-05-28 CN CN 02140112 patent/CN1242273C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI721182B (en) * | 2017-04-21 | 2021-03-11 | 鴻海精密工業股份有限公司 | Motherboard analysis device and method |
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| Publication number | Publication date |
|---|---|
| CN1395112A (en) | 2003-02-05 |
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Address after: Shizuoka Patentee after: Yamaha Motor Electric Corp. Address before: Shizuoka Patentee before: Menlic K. K. |
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Granted publication date: 20060215 Termination date: 20100528 |