CN1235092C - 电子束曝光方法及其装置 - Google Patents
电子束曝光方法及其装置 Download PDFInfo
- Publication number
- CN1235092C CN1235092C CNB038005417A CN03800541A CN1235092C CN 1235092 C CN1235092 C CN 1235092C CN B038005417 A CNB038005417 A CN B038005417A CN 03800541 A CN03800541 A CN 03800541A CN 1235092 C CN1235092 C CN 1235092C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- shade
- electron beam
- masterplate
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP227945/2002 | 2002-07-03 | ||
JP2002227945 | 2002-07-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1522390A CN1522390A (zh) | 2004-08-18 |
CN1235092C true CN1235092C (zh) | 2006-01-04 |
Family
ID=30113006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038005417A Expired - Fee Related CN1235092C (zh) | 2002-07-03 | 2003-06-26 | 电子束曝光方法及其装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20060124866A1 (zh) |
EP (1) | EP1542263A1 (zh) |
JP (1) | JPWO2004006307A1 (zh) |
KR (1) | KR100523170B1 (zh) |
CN (1) | CN1235092C (zh) |
AU (1) | AU2003244004A1 (zh) |
TW (1) | TWI228644B (zh) |
WO (1) | WO2004006307A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2897719B1 (fr) * | 2006-02-20 | 2008-10-03 | Centre Nat Rech Scient | Installation et procede de nano-fabrication |
CN101946306B (zh) * | 2007-12-21 | 2012-08-22 | 康奈尔研究基金会有限公司 | 使用放射性薄膜的自供电光刻方法和装置 |
KR101539153B1 (ko) * | 2010-12-14 | 2015-07-23 | 가부시키가이샤 니콘 | 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 |
JP2014011374A (ja) * | 2012-07-02 | 2014-01-20 | Nuflare Technology Inc | マスク描画方法、マスク描画装置 |
US9299465B1 (en) | 2014-09-30 | 2016-03-29 | Pct Engineered Systems, Llc | Electron beam system |
CN106019854A (zh) * | 2016-07-18 | 2016-10-12 | 无锡宏纳科技有限公司 | 图形可变的电子束光刻机 |
CN112485979A (zh) * | 2020-12-29 | 2021-03-12 | 中山新诺科技股份有限公司 | 一种多光束控制的多电子束光刻设备和光刻方法 |
CN112485980A (zh) * | 2020-12-29 | 2021-03-12 | 中山新诺科技股份有限公司 | 一种多电子束的光刻设备和光刻方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07161599A (ja) * | 1993-12-08 | 1995-06-23 | Nikon Corp | 荷電粒子線転写装置 |
GB2308916B (en) * | 1996-01-05 | 2000-11-22 | Leica Lithography Systems Ltd | Electron beam pattern-writing column |
US5834783A (en) * | 1996-03-04 | 1998-11-10 | Canon Kabushiki Kaisha | Electron beam exposure apparatus and method, and device manufacturing method |
JPH09274884A (ja) * | 1996-04-04 | 1997-10-21 | Nikon Corp | 電子線露光装置 |
JP3565652B2 (ja) * | 1996-04-25 | 2004-09-15 | 富士通株式会社 | 荷電粒子ビーム露光装置用透過マスク及びそれを利用した露光装置 |
US5831272A (en) * | 1997-10-21 | 1998-11-03 | Utsumi; Takao | Low energy electron beam lithography |
JPH11317341A (ja) * | 1998-05-07 | 1999-11-16 | Nikon Corp | 電子線露光装置 |
-
2003
- 2003-06-26 AU AU2003244004A patent/AU2003244004A1/en not_active Abandoned
- 2003-06-26 EP EP03736284A patent/EP1542263A1/en not_active Withdrawn
- 2003-06-26 KR KR10-2003-7015372A patent/KR100523170B1/ko not_active IP Right Cessation
- 2003-06-26 JP JP2004519210A patent/JPWO2004006307A1/ja active Pending
- 2003-06-26 CN CNB038005417A patent/CN1235092C/zh not_active Expired - Fee Related
- 2003-06-26 WO PCT/JP2003/008145 patent/WO2004006307A1/ja active Application Filing
- 2003-06-26 US US10/482,585 patent/US20060124866A1/en not_active Abandoned
- 2003-06-27 TW TW092117550A patent/TWI228644B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPWO2004006307A1 (ja) | 2005-11-10 |
US20060124866A1 (en) | 2006-06-15 |
KR20040052505A (ko) | 2004-06-23 |
TWI228644B (en) | 2005-03-01 |
AU2003244004A1 (en) | 2004-01-23 |
TW200403545A (en) | 2004-03-01 |
KR100523170B1 (ko) | 2005-10-24 |
WO2004006307A1 (ja) | 2004-01-15 |
EP1542263A1 (en) | 2005-06-15 |
CN1522390A (zh) | 2004-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HELEN CO., LTD. Free format text: FORMER OWNER: PD SERVICE K. K. Effective date: 20080801 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20080801 Address after: Shinjuku, Shinjuku, Japan, 2, 5, 5, No. 1, Shinjuku, Tokyo Patentee after: Union Corporation Address before: Japan and Tokyo are transferred to Brisbane Patentee before: PD Service K. K. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060104 Termination date: 20110626 |